JP2010272624A - Exposure method - Google Patents

Exposure method Download PDF

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JP2010272624A
JP2010272624A JP2009121888A JP2009121888A JP2010272624A JP 2010272624 A JP2010272624 A JP 2010272624A JP 2009121888 A JP2009121888 A JP 2009121888A JP 2009121888 A JP2009121888 A JP 2009121888A JP 2010272624 A JP2010272624 A JP 2010272624A
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exposure
substrate
shot
area
focus
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Yasuo Maekawa
康夫 前川
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Panasonic Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an exposure method in which the number of products of good quality obtained on a substrate can be increased while maintaining the quality and without lowering the productivity by making an exposure shot effective by carrying out exposure using a focus measured value of the exposure shot in an exposure region wherein focus measurement can not be performed right before an exposure shot position and an inclination measured value of the substrate when the exposure shot to the exposure region is made. <P>SOLUTION: In the exposure method of carrying out the exposure by dividing a principal surface of the substrate into a plurality of exposure regions including its outer edge part, when exposure regions 104, 106 having their centers outside the outer edge part of the substrate are exposed, neither focus measurement at the positions nor inclination measurement of the substrate is carried out, and an exposure region having its center outside the outer edge part of the substrate is exposed using the focus measured value in the exposure region right before the measurement and the inclination measured value of the substrate to make the exposure shot effective, thereby increasing the number of products of good quality obtained on the substrate while maintaining the quality and without lowering the productivity. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は半導体の製造工程におけるウェハ面へのレチクルのパターンを焼き付ける露光方法に関するものである。   The present invention relates to an exposure method for printing a reticle pattern on a wafer surface in a semiconductor manufacturing process.

従来、基板上にレチクルのパターンを光学系を介して焼き付ける処理装置でレチクルと基板を固定して露光する装置(ステッパー)と、レチクルと基板を同時に動かして露光する装置(スキャナー)があり、これらの2機種を使い分けてレチクルのパターンを基板上に焼き付け、製品を製造している。   Conventionally, there are processing equipment (stepper) that fixes and exposes the reticle and the substrate with a processing device that prints the pattern of the reticle on the substrate through an optical system, and equipment (scanner) that moves the reticle and the substrate at the same time for exposure. The reticle pattern is baked on the substrate using two types of products, and the product is manufactured.

これらの装置は、基板の主面をその外縁部を含め複数個の露光領域に分割して露光するものであって、基板表面が投影光学系の最適な像と合致する焦点合せを行う様に基板を移動ステージ上で投影光学系方向に移動させているために、露光装置ではフォーカスセンサーが使用されており、基板表面に非露光波長の光束を照射し、その反射光を受光して焦点検出が行われ、基板表面での最適な像に対してのずれ量を計測し、移動ステージの投影光学系方向の位置を制御することで焦点合わせを行う。   These apparatuses divide the main surface of the substrate into a plurality of exposure areas including its outer edge, and perform exposure so that the substrate surface matches the optimum image of the projection optical system. Since the substrate is moved in the direction of the projection optical system on the moving stage, a focus sensor is used in the exposure apparatus. The focus detection is performed by irradiating the substrate surface with a non-exposure wavelength light beam and receiving the reflected light. Is carried out, and the amount of deviation from the optimal image on the substrate surface is measured, and focusing is performed by controlling the position of the moving stage in the direction of the projection optical system.

一方、基板の外縁部では、このフォーカスセンサーでの検出ができない領域が一定幅の禁止帯として設定されるため、この禁止帯の領域では焦点のずれ量が計測できないので、最適な像を認識できず、この領域ではパターンの焼き付けができないことがある。   On the other hand, on the outer edge of the substrate, the area that cannot be detected by the focus sensor is set as a fixed band with a fixed width. In this area, there is a case where the pattern cannot be printed.

以下図面を参照しながら説明する。図6(a)は露光時のウェハマップを示し、図6(b)はウェハ露光の順序を示している。   This will be described below with reference to the drawings. FIG. 6A shows a wafer map during exposure, and FIG. 6B shows the order of wafer exposure.

図6(a)に示すように基板601内のフォーカス計測有効領域602を含む露光領域603に対して一回の露光ショットで製品607のパターンの焼き付けが行われる。ウェハ面には、まだ十分に焼き付けができる領域が存在しているが、その領域に製品の焼き付けが行えない露光領域604,605,606が発生する。   As shown in FIG. 6A, the pattern of the product 607 is printed on the exposure region 603 including the focus measurement effective region 602 in the substrate 601 by one exposure shot. On the wafer surface, there is still a region where the image can be sufficiently printed, but exposure regions 604, 605, and 606 where the product cannot be printed are generated in that region.

即ち、図6(b)に示すように露光する装置としては図示の数値順に0から16まで準備されているが、前記禁止帯の部分は露光しないので先ず最初の列では順に露光ショット1から6を行い、次に順次露光ショット9から16を行って継続されることになるが、この中で露光ショット0と7と8に対抗する位置にある図6(a)の露光領域605,604,606は無効ショットとなり、これ以外の露光領域603は有効ショットとなる。これは、基板の外縁部ではフォーカスセンサーでの検出ができない領域が一定幅の禁止帯として設定されるため、この禁止帯の領域では焦点のずれ量が計測できず、最適な像を認識できないことになり、したがって、この領域では、パターンの焼き付けができないので、無効な露光領域604,605,606ができることになる。   That is, as shown in FIG. 6 (b), the exposure apparatus is prepared from 0 to 16 in the numerical order shown in the figure, but since the forbidden band portion is not exposed, exposure shots 1 to 6 are sequentially arranged in the first column. Then, the exposure shots 9 to 16 are successively performed, and the exposure is continued, and the exposure areas 605, 604 in FIG. 606 is an invalid shot, and the other exposure areas 603 are valid shots. This is because the area that cannot be detected by the focus sensor at the outer edge of the substrate is set as a fixed band with a fixed width, so the amount of defocus cannot be measured in this prohibited band area, and the optimum image cannot be recognized. Therefore, in this area, the pattern cannot be printed, so that invalid exposure areas 604, 605, and 606 are formed.

この対策として、例えば特開平6−029186号公報に記載されているように基板上の禁止帯の境界線位置までフォーカス検出点をシフトさせて焦点合せを行い、しかる後本来のショット露光位置へ移動させてパターンを露光する方法も提案されているが、このように常にフォーカス検出点までステージを移動させ、フォーカス検出を行い、この動作の後にステージを該当の露光領域まで移動させた後に焦点合わせを行って露光ショットとするということは、禁止帯からフォーカス検出可能な点への移動位置の設定が困難で、これを装置に認識させるためには難解なプログラムを組む必要がある。   As a countermeasure, for example, as described in JP-A-6-029186, focusing is performed by shifting the focus detection point to the boundary line position of the forbidden band on the substrate, and then moving to the original shot exposure position. In this way, a method of exposing a pattern has also been proposed, but in this way, the stage is always moved to the focus detection point, focus detection is performed, and after this operation, the stage is moved to the corresponding exposure area, and then focusing is performed. When the exposure shot is performed, it is difficult to set the movement position from the forbidden band to a point where focus detection is possible, and it is necessary to build a difficult program in order to make the apparatus recognize this.

また一旦、該当の露光領域までステージを移動させた後、フォーカス検出点外、すなわちフォーカス検出の禁止帯の認識を行うために無駄な動きと時間を要し、さらに、禁止帯からフォーカス検出可能な点への移動位置の設定を焼き付けパターンと製品との相関を取りながら決めることが必要であり、これなくしては製品の品質を保つことができないので品質不良を起こし易く、安定した品質での生産を実現することは難しい。   In addition, once the stage is moved to the corresponding exposure area, it takes unnecessary movement and time to recognize the focus detection prohibition band, that is, the focus detection prohibition band. Further, focus detection is possible from the prohibition band. It is necessary to determine the setting of the movement position to the point while correlating the baking pattern with the product. Without this, the product quality cannot be maintained, so it is easy to cause quality defects and production with stable quality. Is difficult to realize.

特開平6−029186号公報JP-A-6-029186

上述のように、基板上にレチクルのパターンを光学系を介して焼き付けるための露光用のウェハマップを作成し、マップ上にて複数の露光領域に対して露光の順序を示し、その順に露光ショットを行って、最初の列、次の列と順に露光ショットを進め、これを継続して行く場合、ウェハマップ上には露光ショットで有効露光領域と無効露光領域が発生する。   As described above, an exposure wafer map for printing a reticle pattern on a substrate through an optical system is created, and the exposure order is shown for a plurality of exposure areas on the map. When the exposure shot is advanced in the order of the first column and the next column, and this is continued, an effective exposure region and an invalid exposure region are generated on the wafer map by the exposure shot.

これは、基板に対して、露光装置のフォーカス計測有効領域が設定されており、この設定領域外にて露光ショットを行う場合は、フォーカス計測および焦点合せができないため、これが無効露光領域となっているものである。したがって、基板上に効率よく製品を焼き付けることができずに基板上での製品の焼付け領域を無駄にしており、基板上で有効に製品の取れ数を増やすことができなくなっている。この結果、製品のコストを低減させることができず、生産性の悪化をきたしている。   This is because the focus measurement effective area of the exposure apparatus is set for the substrate, and when an exposure shot is performed outside this setting area, focus measurement and focusing cannot be performed, so this becomes an invalid exposure area. It is what. Therefore, the product cannot be efficiently baked on the substrate, and the product baking area on the substrate is wasted, so that it is not possible to effectively increase the number of products obtained on the substrate. As a result, the cost of the product cannot be reduced and the productivity is deteriorated.

また、これらを解決するために発明された特許文献1に記載された発明のように、該当の露光領域までステージを移動させた後、フォーカス検出点外、すなわちフォーカス検出の禁止帯の認識を行った後に、フォーカス検出可能な領域にステージを移動し、フォーカス検出を行い、さらにこの動作の後にステージを該当の露光領域まで移動させた後に焦点合わせを行い、露光ショットして露光を行うようにしたものでは無駄な動きと時間を要し、生産性が非常に悪くなる。   Further, as in the invention described in Patent Document 1 invented to solve these problems, after moving the stage to the corresponding exposure region, recognition of the focus detection prohibition band, that is, the focus detection prohibition band is performed. After that, the stage is moved to an area where focus detection is possible, focus detection is performed, and after this operation, the stage is moved to the corresponding exposure area, then focusing is performed, and exposure shot is performed for exposure. Things require wasted movement and time, and productivity is very poor.

本発明は、上記従来の課題を解決するものであり、ウェハの外縁部での露光ショットにおいて、フォーカス計測できない領域での無効露光領域が発生すると予想される場合、該当ショットの配列作成を行うウェハマップ作成時に上記領域の直前または直後の露光ショットのフォーカス計測値および基板の傾き計測値を使用したマップを用意し、これによって前記無効露光領域位置への露光を行うことによりこれを有効化し、品質を保ちながら生産性を落とすことなく、基板上での良質な製品の取れ数を増加させることができる露光方法を提供することを目的とするものである。   The present invention solves the above-described conventional problems, and in an exposure shot at an outer edge portion of a wafer, when an invalid exposure area in an area where focus measurement cannot be performed is expected to occur, a wafer that creates an array of the corresponding shot Prepare a map that uses the focus measurement value of the exposure shot immediately before and immediately after the above area and the substrate tilt measurement value when creating the map, thereby enabling this by exposing to the invalid exposure area position, quality It is an object of the present invention to provide an exposure method capable of increasing the number of high-quality products obtained on a substrate without reducing productivity while maintaining the above.

上記目的を達成すべく、基板の主面をその外縁部を含め複数個の露光領域に分割して露光する露光方法であって、前記基板の外縁部より外側に中心がある外縁露光領域を露光する際、その位置でのフォーカス計測および前記基板の傾き計測を行わず、その直前または直後の露光領域におけるフォーカス計測値および基板の傾き計測値を用いて前記外縁露光領域を露光するようにしたものである。   In order to achieve the above object, an exposure method in which a main surface of a substrate is divided into a plurality of exposure areas including its outer edge, and the outer edge exposure area having a center outside the outer edge of the substrate is exposed. In this case, the outer edge exposure area is exposed using the focus measurement value and the substrate inclination measurement value in the exposure area immediately before or immediately after the focus measurement and the substrate inclination measurement at the position. It is.

このように、直前または直後の露光ショットのフォーカス計測値および基板の傾き計測値を用いることにより、これまで無効となっていた露光領域を有効なものにすることができ品質を保ちながら生産性を落とすことなく、基板上での良質な製品の取れ数を増加させることができる。   In this way, by using the focus measurement value and the substrate tilt measurement value of the exposure shot immediately before or immediately after, it is possible to make the exposure area that has been invalid until now effective, while maintaining productivity while maintaining quality. Without dropping, it is possible to increase the number of high-quality products obtained on the substrate.

本発明によれば、良質な品質を保ち、生産性を落とすことなく基板上での良質な製品の取れ数を増加させることができる。   According to the present invention, it is possible to increase the number of high-quality products obtained on a substrate while maintaining high-quality quality and without reducing productivity.

本発明露光方法の一実施の形態におけるウェハマップの説明図Explanatory drawing of the wafer map in one embodiment of the exposure method of the present invention 図1のウェハマップに基づく露光順序の説明図Explanatory drawing of exposure order based on wafer map of FIG. ステッパーに本発明露光方法を適用した場合の良品試算を示すグラフA graph showing a good quality estimation when the exposure method of the present invention is applied to a stepper スキャナーに本発明露光方法を適用した場合の第1の良品試算を示すグラフThe graph which shows the 1st good quality calculation when the exposure method of the present invention is applied to the scanner スキャナーに本発明露光方法を適用した場合の第2の良品試算を示す説明図Explanatory drawing which shows the 2nd good quality calculation when the exposure method of the present invention is applied to the scanner 従来の露光方法におけるウェハマップの配列図および露光順序の説明図Arrangement diagram of wafer map and explanatory diagram of exposure order in conventional exposure method

以下、本発明の一実施の形態につき図面を参照しながら説明する。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

図1は本発明露光方法の一実施の形態におけるウェハマップの説明図である。   FIG. 1 is an explanatory view of a wafer map in an embodiment of the exposure method of the present invention.

図1に示すように基板101内のフォーカス計測有効領域102を含む露光領域103に対して一回の露光ショットで製品107のパターンの焼き付けが行われる。   As shown in FIG. 1, the pattern of the product 107 is printed in one exposure shot on the exposure area 103 including the focus measurement effective area 102 in the substrate 101.

しかしながらこのようにすると、ウェハ面には、まだ十分に焼き付けができる領域が存在しているものの、その領域に製品の焼き付けが行えない露光領域104,105,106が発生する。   However, in this case, although there are areas where the wafer can be sufficiently printed on the wafer surface, exposure areas 104, 105, and 106 where the product cannot be printed are generated in that area.

本実施の形態ではウェハ上への製品の焼き付け(露光)において、ウェハの外縁部での露光時、現状の露光装置ではフォーカスが計測できない領域に例えば図6の露光領域604相当位置に無効ショットが発生することを予測して、予め、図1に示すように露光ショットの配列を作成する際、必ず、前記露光領域の直前(一つ前)の露光ショットのフォーカス計測値を使用して、前記無効となる露光領域位置に露光を行うようにしたものであり、これにより露光領域104を有効化することができるのである。   In the present embodiment, when a product is printed on the wafer (exposure), when an exposure is performed on the outer edge of the wafer, an invalid shot is placed in a region corresponding to the exposure region 604 in FIG. When generating an exposure shot array as shown in FIG. 1 in advance, the focus measurement value of the exposure shot immediately before (one before) the exposure area is always used, The exposure is performed at the position of the exposure area that becomes invalid, and thus the exposure area 104 can be validated.

即ち、図2に示す露光装置の焼き付け順でウェハマップ上に示す数値の最初の列の露光ショット1から6の順に焼き付けを行い、次の列の露光ショット9から16を行う際、最初の列の露光ショット1から6の最終ショット6により、前記図6(b)で無効と認識されていた露光領域を有効化するために、前記露光領域の直前の前記ショット6のフォーカス計測値を用いて、前記露光領域の焼き付けを行うことで、これを有効な露光領域104にすることができる。   That is, when the exposure shots 1 to 6 in the first row of the numerical values shown on the wafer map are printed in the order of printing of the exposure apparatus shown in FIG. 2 and the exposure shots 9 to 16 in the next row are performed, the first row In order to validate the exposure area recognized as invalid in FIG. 6B by the final shot 6 of the exposure shots 1 to 6, the focus measurement value of the shot 6 immediately before the exposure area is used. By printing the exposure area, it is possible to make the exposure area 104 effective.

なお、この露光ショットを用いる際は、図1のウェハマップを作成し、有効ショットであることを認識させるために、露光装置の露光条件に該当ショットのフォーカス計測は行わないことと、直前の前記最終露光ショット6のフォーカス計測値を用いることと、傾き補正も同時にこの露光ショットの計測値を用いることの情報を予め与えることとする。これらの情報は、露光装置内でのソフトウェアで対応し、図1のウェハマップ作成時に情報を入力し、露光装置を動作させることで、上記のように有効な露光領域104として焼き付けることが可能となる。これにより良質な品質を保ち、生産性を落とすことなく基板上での良質な製品の取れ数を増加させるができる。   When using this exposure shot, in order to create the wafer map of FIG. 1 and recognize that it is an effective shot, the focus measurement of the shot is not performed under the exposure conditions of the exposure apparatus, It is assumed that information on using the focus measurement value of the final exposure shot 6 and using the measurement value of the exposure shot at the same time as tilt correction is given in advance. These pieces of information correspond to software in the exposure apparatus, and can be printed as an effective exposure area 104 as described above by inputting the information when creating the wafer map in FIG. 1 and operating the exposure apparatus. Become. As a result, it is possible to maintain good quality and increase the number of good products on the substrate without reducing productivity.

同様にして図2に示す露光ショット9のフォーカス値を用いて同露光ショット8の位置に露光ショットを焼き付けることで図6に示したこれまで無効となっていた露光領域606を図1における有効な露光領域106として焼き付けることが可能となる。   Similarly, by using the focus value of the exposure shot 9 shown in FIG. 2, the exposure shot 606 shown in FIG. The exposure area 106 can be printed.

本実施の形態に基づき、これをレチクルと基板を固定して露光する装置(ステッパー)に適用し品質の確認と製品の取れ数の確認を行った結果を図3に示す。図示の通り縦軸に歩留、横軸にショット内有効チップ数をとったグラフとして表した場合の良品試算によれば、無効ショットを有効ショットにすることによるショット内の良品数は、通常の有効ショット内での良品数に対して減少する。製品の良品率が低下するが、無効ショットを有効ショットにすることによる基板全体での良品率の低下は1割以内と予想される。よって、製品の取れ数を、品質を落とすことなく増やすことができる。   FIG. 3 shows the result of confirming the quality and confirming the number of products obtained by applying this to an apparatus (stepper) that performs exposure with the reticle and the substrate fixed based on the present embodiment. As shown in the figure, according to the non-defective calculation when the vertical axis represents the yield and the horizontal axis represents the number of effective chips in the shot, the number of non-defective products in the shot by changing the invalid shot to the valid shot is Decreases relative to the number of non-defective products within the effective shot. Although the yield rate of products will decline, the decline in yield rate on the entire board due to invalid shots being effective shots is expected to be within 10%. Therefore, the number of products can be increased without degrading quality.

また、図4に示す通りレチクルと基板を同時に動かして露光する装置(スキャナー)に適用した場合の第1の良品試算は、無効ショットを有効ショットにすることでのショット内の良品数は、横列で減少し、無効ショットを有効ショットにすることによるその有効ショット内での製品の良品率も低下するが、無効ショットを有効ショットにすることによる基板全体での良品率の低下は1割以内と予想される。よって、製品の取れ数を、品質を落とすことなく増やすことができる。   In addition, as shown in FIG. 4, the first non-defective product calculation when applied to an apparatus (scanner) that moves the reticle and the substrate at the same time to perform exposure is as follows. If the invalid shot is changed to an effective shot, the non-defective product rate within the effective shot also decreases. is expected. Therefore, the number of products can be increased without degrading quality.

さらに、図5に示す通りスキャナーに適用した場合の第2の良品試算では、有効ショットのショット内での製品の良品率は、無効ショットを有効ショットにすることによるその有効ショット内での製品の良品率との差はなく、製品の取れ数を、品質を落とすことなく増やすことができると予想される。   Furthermore, in the second non-defective product trial calculation when applied to the scanner as shown in FIG. 5, the non-defective product rate in the shot of the valid shot is the product of the product in the valid shot by changing the invalid shot to the valid shot. There is no difference with the yield rate, and it is expected that the number of products can be increased without degrading quality.

以上の結果より、無効な露光領域を有効化することにより、品質を落とすことなく、取れ数を増やすことができ、代表的な品種における取れ数の増加数は、1.1%向上できると試算することができる。   From the above results, it is estimated that by enabling invalid exposure areas, the number of picks can be increased without degrading quality, and the number of picks for representative varieties can be increased by 1.1%. can do.

また、最初の列の露光ショットでできる最初の露光領域や最後の露光領域が、これまで無効と認識されていたものを有効化するために、上述の該当露光ショットの直前の露光ショットのフォーカス計測値を用いる代わりに露光ショットの直後(一つ後)の露光ショットのフォーカス計測値を用いることもでき、前記同様の効果が得られる。   In addition, in order to validate the first exposure area and the last exposure area that can be recognized as invalid in the first row of exposure shots, the focus measurement of the exposure shot immediately before the corresponding exposure shot described above is performed. Instead of using the value, the focus measurement value of the exposure shot immediately after (one after) the exposure shot can be used, and the same effect as described above can be obtained.

即ち、図2で露光ショット0の位置において、露光機の露光条件として、該当ショットのフォーカス計測は行わないことと、その直後の露光ショット1のフォーカス計測値を用いることと、傾き補正も同時に一つ後の計測値を用いることの情報を予め与え、露光順を指定することにより、先に露光ショット0に基づく無効ショットの次の露光ショット1に基づく有効ショットの露光ショット後、一旦、上記無効ショットの場所まで戻り、ここで有効ショットを露光後に、次の露光ショットの露光へと移動することで、前記露光ショット0に基づくショットは有効な露光領域105として焼き付けられる。   That is, at the position of exposure shot 0 in FIG. 2, the focus measurement of the corresponding shot is not performed as the exposure condition of the exposure machine, the focus measurement value of exposure shot 1 immediately after that is used, and the tilt correction is simultaneously performed. By giving information on the use of the next measured value in advance and designating the exposure order, after the exposure shot of the effective shot based on the exposure shot 1 next to the invalid shot based on the exposure shot 0, the invalidity is temporarily set. The shot is returned to the shot location, and after the effective shot is exposed to the next exposure shot, the shot based on the exposure shot 0 is printed as an effective exposure area 105.

なお、前記の情報は、露光装置内でのソフトウェアで対応し、前述のようにウェハマップ作成時に情報を入力し、露光装置を動作させることで、上記のように有効な露光領域105として焼き付けることが可能となり、前記同様、良質な品質を保ちながら生産性を落とすことなく基板上での良質な製品の取れ数を増加させるができる。   The information corresponds to the software in the exposure apparatus. As described above, the information is input at the time of creating the wafer map, and the exposure apparatus is operated to burn as the effective exposure area 105 as described above. As described above, the number of good products on the substrate can be increased without reducing productivity while maintaining good quality.

本発明は基板上のフォーカス計測の禁止帯への露光ショットによる露光領域を有効化した形で製品のパターンを焼き付けることができるので、基板上に作成するパターンの微細化に伴うコストアップや基板上へのパターンの焼き付けできる露光領域の有効活用などの課題に対応することが可能となり、品質が安定した状態で良品の製品の取れ数を増加させることができ、製品コストの低減を低コストで実現できる技術として半導体の製造工程などに有効である。   In the present invention, the product pattern can be printed in a form in which the exposure area by the exposure shot to the prohibited band for focus measurement on the substrate is validated, so that the cost increase accompanying the miniaturization of the pattern to be created on the substrate and the It is possible to respond to issues such as the effective use of the exposure area where patterns can be printed on the surface, increasing the number of non-defective products with stable quality, and reducing product costs at a low cost. This is an effective technique for semiconductor manufacturing processes.

101 基板
102 フォーカス計測有効領域
103 露光領域(有効)
104 露光領域(有効)
105 露光領域(有効)
106 露光領域(有効)
107 製品
101 Substrate 102 Focus measurement effective area 103 Exposure area (effective)
104 Exposure area (effective)
105 Exposure area (effective)
106 Exposure area (effective)
107 products

Claims (2)

基板の主面をその外縁部を含め複数個の露光領域に分割して露光する露光方法であって、前記基板の外縁部より外側に中心がある露光領域を露光する際、その位置でのフォーカス計測および前記基板の傾き計測を行わず、その直前の露光領域におけるフォーカス計測値および基板の傾き計測値を用いて前記露光領域を露光することを特徴とする露光方法。   An exposure method in which a main surface of a substrate is divided into a plurality of exposure areas including its outer edge, and exposure is performed when an exposure area having a center outside the outer edge of the substrate is exposed. An exposure method comprising exposing the exposure region using a focus measurement value and a substrate tilt measurement value in an immediately preceding exposure region without performing measurement and substrate tilt measurement. 基板の主面をその外縁部を含め複数個の露光領域に分割して露光する露光方法であって、前記基板の外縁部より外側に中心がある露光領域を露光する際、その位置でのフォーカス計測および前記基板の傾き計測を行わず、その直後の露光領域におけるフォーカス計測値および基板の傾き計測値を用いて前記露光領域を露光することを特徴とする露光方法。   An exposure method in which a main surface of a substrate is divided into a plurality of exposure areas including its outer edge, and exposure is performed when an exposure area having a center outside the outer edge of the substrate is exposed. An exposure method comprising exposing the exposure region using a focus measurement value and a substrate tilt measurement value in an immediately following exposure region without performing measurement and substrate tilt measurement.
JP2009121888A 2009-05-20 2009-05-20 Exposure method Pending JP2010272624A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108931889A (en) * 2017-05-22 2018-12-04 株式会社东海理化电机制作所 Exposure method
JP2020052075A (en) * 2018-09-21 2020-04-02 株式会社Screenホールディングス Drawing device and drawing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108931889A (en) * 2017-05-22 2018-12-04 株式会社东海理化电机制作所 Exposure method
JP2018194778A (en) * 2017-05-22 2018-12-06 株式会社東海理化電機製作所 Exposure method
JP2020052075A (en) * 2018-09-21 2020-04-02 株式会社Screenホールディングス Drawing device and drawing method

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