CN101609261B - Method for exposure - Google Patents
Method for exposure Download PDFInfo
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- CN101609261B CN101609261B CN2008101259751A CN200810125975A CN101609261B CN 101609261 B CN101609261 B CN 101609261B CN 2008101259751 A CN2008101259751 A CN 2008101259751A CN 200810125975 A CN200810125975 A CN 200810125975A CN 101609261 B CN101609261 B CN 101609261B
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- light
- exposure
- light area
- lens
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Abstract
The invention discloses a method for exposure, which is used for avoiding a negative influence generated by the raising of the temperature of a lens group in an exposure process. The method comprises the following steps: firstly, light beams pass through a first light receiving area of the lens group, patterns are exposed on a substrate, and the temperature of the first light receiving area is raised at that time; the first light receiving area is removed; and then, the light beams penetrate through a second light receiving area of the lens group so as to enable the temperature of the first light receiving area to be lowered.
Description
Technical field
The present invention relates to a kind of method of exposure, in brief, the present invention relates to a kind of method of exposure, can avoid when exposing light beam scioptics group, because the asymmetric rising of lens temperature and cause the problem of exposed image distortion (distortion) in the lens combination.
Background technology
Exposure technique has critical role in industry member, because the excellent exposure technology can be transferred to predetermined pattern on the base material from photomask exactly.The specification of exposure system defines the critical dimension (critical dimension) of manufacture craft, and light source itself is the main factor that the decision exposure system can be reached critical dimension.The wavelength of light source is short more, and the critical dimension of exposure system also decreases usually.By some optics auxiliary equipment, for example, the critical dimension of exposure system further can be reduced at the off-axis illumination (OAI, OffAxis Illumination) of lens combination.
These optics ancillary methods or improved the ability of exposure bench, or improved with figure when photomask is transferred accurately and readability.With the off-axis illumination is example, is not the exposure of whole field (field) during exposure, but by light scanning patter back and forth.Owing to only use the part of lens during light scanning, more can not be subjected to the influence of lens defect.
But, a kind of form of energy only.The short more luminous energy of wavelength is also high more.When light during by the projection optical system (projection optical system) in the exposure system, the lens in the projection optical system more or less can absorb light and convert heat to.Heat can cause the physical property of lens to change, then change the imaging path of light, and make exposed image twist.Particularly off-axis illumination is only used the part of lens when exposure, makes that the problem of the asymmetric distortion of image is more obvious, has influence on the accurate and readability of figure when photomask is transferred.
So be badly in need of a kind of exposure method of novelty, can avoid when exposing light beam passes through projection optical system, because light beam is via the aperture dish with asymmetric opening, for example (dipoleaperture) coiled in the twoport aperture, make lens in the projection optical system, through the asymmetric light that is subjected to after a while, cause lens to be heated (lens heating) and on pupil plane (pupil plane), present the uneven problem of light intensity distributions (intensityprofile or intensity distribution), cause exposed image distortion (distortion).
Summary of the invention
The object of the present invention is to provide a kind of exposure method of novelty, can avoid when exposing light beam passes through projection optical system via the aperture dish with asymmetric opening, because the lens in the projection optical system, through the asymmetric light that is subjected to after a while, cause lens to be heated and cause exposed image distortion.
The object of the present invention is achieved like this, and a kind of method of exposure promptly is provided.At first, the base material of preparing to accept pattern transfer is provided, can allows this light beam pass through, and with projection optical system and the light beam of pattern transfer to the base material.In projection optical system, provide at least corresponding to first light area of this first pattern and corresponding to second light area of second pattern, light beam is passed through this first light area, and can with first pattern exposure on base material with light beam by second light area, and can be on base material with second pattern exposure.
Description of drawings
The preferred embodiment of the exposure method of Fig. 1-a kind of novelty of Fig. 3 illustration the present invention.
The main element symbol description
101 base materials, 110 projection optical systems
112 second light areas, 111 first light areas
113,113 ', 113 " lens
115 the 3rd light areas are coiled in 114 apertures
116 pupil planes, 118 openings
120 light beams, 121 light sources
140 photomasks
Embodiment
Novel exposure method provided by the present invention can avoid exposing light beam to cause the asymmetric rising of lens temperature, produces the problem of exposed image distortion, guarantees the accurate and readability of figure when photomask is transferred.
The preferred embodiment of the exposure method of Fig. 1-a kind of novelty of Fig. 2 illustration the present invention.The illustration of Fig. 1-Fig. 2 is only listed the part exposure device, so that clearly demonstrate through simplifying.At first, as shown in Figure 1, exposure system 100 comprises light source 121, aperture dish 114 (aperture), photomask 140 (reticle orphotomask), projection optical system 110, pupil plane 116 and base material 101.Produce light beam 120 from light source 121 and see through aperture dish 114, through projection optical system 110 pattern predetermined on the photomask 140 (figure does not show) is transferred on the base material 101 again.116 of pupil planes are within projection optical system 110, below the lens 113.
For instance, the aperture of asymmetric opening dish 114 is diplopore aperture dish as used herein, light beam 120 has the element of predetermined formed patterns by the opening 118, on the diplopore aperture dish 114, all in the present embodiment photomask 140, projection optical systems 110 in this way, and formed optical path such as this base material 101, and with all pattern transfer of shape that is predetermined to be in this way to this base material 101; During by the lens 113 in the projection optical system 110, lens 113 provide first light area 111 that light beam is passed through, and feasible first pattern corresponding to first light area 111 (figure does not show) exposure is on base material.First pattern can be any pattern that need shift or be limited on the base material 101, for example active area pattern or gate pattern.Because light beam 120 has energy, so when first light area 111 in light beam 120 scioptics 113, the temperature of first light area 111 just can rise.When the temperature of first light area 111 obviously rose, lens were heated and can make and just can influence the light intensity distributions inequality imaging on the pupil plane 116, and cause first pattern distortions.In order to be maintained in the quality of picture, before lens are influenced by heat image quality, a new exposure method is proposed, do not changing under the aforementioned optical path, lens 113 provide different light areas to pass through so that light beam 120 to be provided.
So, do not changing light beam 120 by under the optical path of projection optical system 110, in other words, lens 113 provide different light areas to allow light beam 120 pass through keeping under the identical optical path, can use the batch or the mode of continous way to change light receiving position in the lens 113, for example first light area 111.Change the mode of first light area 111 in the lens 113, for example with horizontal relay lens 113, rotation mode can be clockwise horizontal rotation or horizontal rotation counterclockwise.By adjusting lens 113 so that first light area 111 is left original light receiving position fully, another light receiving position is provided, allow keep equally and pass through with first light area, 111 identical optical path light beams 120, second light area 112 for example, to avoid first light area, 111 temperature in the lens 113 to rise, cause lens to be heated, and then influence the problem of imaging.
The preferably, when first light area 111 that changes lens 113 is second light area 112, light beam 120 is not by projection optical system 110, in addition, as long as the quality of first pattern still within the acceptable range, can also depending on the circumstances or the needs of the situation repeat to make light beam 120 by behind 111 several times of first light area, the position with first light area 111 changes with second light area 112 again, that is the mode of batch (Batch); The mode of continous way (Continuous) then is that light beam 120 passes through first light area 111 once, promptly changes with second light area 112 and passes through once, makes the light area of each light beam 120 scioptics 113 neither identical, as shown in Figure 1.Only illustrate with first light area 111 and second light area 112 at this, the number of light area can be depending on the area of lens 113, the 3rd light area 115, the 4th light area 117... etc. for example can also be arranged, as shown in Figure 2.
Then, provide second light area 112 in light beam 120 scioptics 113 again, and second pattern (figure does not show) is exposed on base material 101.Because present light receiving position has left the position of original first light area 111 fully, so when light beam 120 scioptics 113, light beam 120 is second light area 112 in the scioptics 113.The preferably, first light area 111 and second light area 112 are not overlapping fully.Because this moment, light beam 120 was no longer by first light area 111,, make the physical property of first light area 111 in the lens 113 reply normal so the temperature of first light area 111 descends.
Second pattern can be any pattern that need shift or be limited on the base material 101, for example active area pattern or gate pattern.Second pattern and first pattern can be the same or different.
In other preferred embodiments, a plurality of lens in the projection optical system 110 at this, are called for short lens combination, as shown in Figure 3.A plurality of lens 113,113 ', 113 in the lens combination " between have the optics symmetry mutually; under the optical path that does not change the aforementioned light beam that limits 120 scioptics groups; the light receiving position of lens combination is corresponding mutually, just directly horizontal rotating and projection optical system 110 is removed the light receiving position in the lens combination.The rotation mode of lens can be clockwise horizontal rotation or horizontal rotation counterclockwise in the lens combination.The sense of rotation of lens out of the ordinary can be the same or different.
In novel exposure method provided by the present invention, owing to light beam coils the lens that pass through in the projection optical system via the aperture with asymmetric opening, and asymmetric light area is arranged, temperature in the light area raises and promptly removes light area originally before influencing image quality, make light beam pass other zones of the lens in the projection optical system, as the light area, be subjected to light of a specified duration excessively to avoid the same area in the lens, cause lens to be heated.The present invention thereby solved the problem of exposed image distortion has guaranteed the quality of exposing patterns.
The above only is preferred embodiment of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to covering scope of the present invention.
Claims (10)
1. the method for an exposure comprises:
Provide one can accept to comprise that the base material of the pattern transfer of first pattern and second pattern, a light beam and can allow this light beam pass through, and with the projection optical system of pattern transfer to the base material;
One first light area and one second light area are provided in this projection optical system at least, and wherein this first light area is corresponding to this first pattern, and this second light area is corresponding to this second pattern;
This light beam is passed through this first light area, and can be with this first pattern exposure on this base material; And
This light beam is passed through this second light area, and can be with this second pattern exposure on this base material;
Wherein, rise and before influencing the first pattern quality time, the position of first light area can be changed with second light area when the temperature of first light area.
2. the method for exposure as claimed in claim 1 wherein further comprises an asymmetric aperture dish, makes this light beam coil by this first light area in this projection optical system by this asymmetric aperture.
3. the method for exposure as claimed in claim 2, wherein this asymmetric aperture dish coils for the diplopore aperture.
4. the method for exposure as claimed in claim 1, wherein this projection optical system comprises lens.
5. the method for exposure as claimed in claim 1, wherein this projection optical system comprises a plurality of lens.
6. the method for exposure as claimed in claim 4, wherein this first light area is provided by these lens.
7. the method for exposure as claimed in claim 5, wherein this first light area is provided by these a plurality of lens.
8. the method for exposure as claimed in claim 1, wherein still comprise the method for this light beam being changed into second light area by this first light area, comprising rotating this projection optical system, make to be that the location change of this first light area is this second light area originally with horizontal.
9. the method for exposure as claimed in claim 8 wherein uses a batch to change this first light area.
10. the method for exposure as claimed in claim 8 wherein uses a continous way to change this first light area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101259751A CN101609261B (en) | 2008-06-16 | 2008-06-16 | Method for exposure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2008101259751A CN101609261B (en) | 2008-06-16 | 2008-06-16 | Method for exposure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101609261A CN101609261A (en) | 2009-12-23 |
| CN101609261B true CN101609261B (en) | 2011-07-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2008101259751A Active CN101609261B (en) | 2008-06-16 | 2008-06-16 | Method for exposure |
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| Country | Link |
|---|---|
| CN (1) | CN101609261B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101109909A (en) * | 2006-07-18 | 2008-01-23 | Asml荷兰有限公司 | Lithographic apparatus, aberration correction device and device manufacturing method |
| KR20080036847A (en) * | 2006-10-24 | 2008-04-29 | 삼성전자주식회사 | Photolithographic exposure apparatus and exposing method using the same |
-
2008
- 2008-06-16 CN CN2008101259751A patent/CN101609261B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101109909A (en) * | 2006-07-18 | 2008-01-23 | Asml荷兰有限公司 | Lithographic apparatus, aberration correction device and device manufacturing method |
| KR20080036847A (en) * | 2006-10-24 | 2008-04-29 | 삼성전자주식회사 | Photolithographic exposure apparatus and exposing method using the same |
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| Publication number | Publication date |
|---|---|
| CN101609261A (en) | 2009-12-23 |
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