CN107037696A - The method for improving alignment precision - Google Patents
The method for improving alignment precision Download PDFInfo
- Publication number
- CN107037696A CN107037696A CN201710458343.6A CN201710458343A CN107037696A CN 107037696 A CN107037696 A CN 107037696A CN 201710458343 A CN201710458343 A CN 201710458343A CN 107037696 A CN107037696 A CN 107037696A
- Authority
- CN
- China
- Prior art keywords
- litho pattern
- mask
- litho
- alignment precision
- photoetching process
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7042—Alignment for lithographic apparatus using patterning methods other than those involving the exposure to radiation, e.g. by stamping or imprinting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
A kind of method for improving alignment precision of the present invention, including：Compound mask version is provided, the compound mask version includes the first litho pattern and the second litho pattern of specular；First time photoetching process is carried out by mask of first litho pattern；Second of photoetching process is carried out by mask of second litho pattern of upset, first time photoetching process and the figure that second of photoetching process is formed are in the same direction.In the present invention, first time photoetching process is identical with the direction of graphics expansion in second of photo-etching technological process, is easy to the contraposition of first time litho pattern and the second litho pattern, improves alignment precision.
Description
Technical field
The present invention relates to technical field of semiconductor lithography, more particularly to a kind of method for improving precision of playing truant.
Background technology
The alignment precision of photoetching is to weigh one of key parameter of photoetching process, it refer on silicon chip up and down two layer patterns it
Between offset, the quality of alignment precision will directly affect the performances of final products.Influence the factor of alignment precision a lot, bag
Include：Heat treatment process, the quality of film growth, the overlay mark of silicon chip deformation and photoetching process in itself outside photoetching process
Quality, litho machine alignment, photoetching machine lens expanded by heating and mask plate expanded by heating etc..
In actual exposure process, mask plate can be heated after the irradiation of deep ultraviolet light and produce thermal expansion effect
Should, as shown in figure 1, dotted portion is the mask plate schematic diagram after expanded by heating, the thermal expansion of mask plate will directly affect silicon chip
On graphical quality, and then influence above and below two layer patterns alignment precision., can be with typically, for the thermal expansion of mask plate
Maked corrections by the imaging system of litho machine, to correct influence of the thermal expansion for picture distortion of mask plate, so as to reduce
Influence to alignment precision, but the method for this correction, are suitable only for the consistent mask plate in thermal expansion direction, i.e., only to individual layer
Mask plate is effective.But in actual production and R＆D process, in order to save the cost of mask plate, often covered using two-in-one
Left and right or two litho patterns are distributed with that is, every piece mask plate, such as Fig. 2 a or 2b institutes in film version, so-called two-in-one mask plate up and down
The first litho pattern 101 and the second litho pattern 102 shown, the figure of the usual litho pattern 102 of first litho pattern 101 and second
Shape direction is consistent.For this two-in-one mask plate, the first litho pattern 101 is being carried out respectively and the second litho pattern 102 exposes
Light time, simply the half of mask plate is exposed and expanded by heating every time, and second half because unexposed without producing thermal expansion, because
The thermal expansion shape produced after the exposure of this litho pattern 102 of the first litho pattern 101 and second is different, as shown in Fig. 3 a, 3b,
Wherein Fig. 3 a represent the thermal expansion condition produced after the exposure of the first litho pattern, because simply the top half of mask plate is heated,
And the latter half is not heated, therefore reverse trapezoid shape 111 is generated, similarly, Fig. 3 b are produced after representing the exposure of the second litho pattern
Thermal expansion condition, be a trapezoid shape 112, the different inflated configurations of the first lithography layer 101 and the second lithography layer 102 cause
The direction that the photoetching offset plate figure being formed on silicon chip produces distortion is also just different, when the first litho pattern 101 and the second photoetching
When needing to realize alignment between figure 102, as shown in figure 4, the reverse trapezoid shape 111 and second after the first litho pattern thermal expansion
Trapezoid shape 112 after litho pattern thermal expansion can not be completely superposed together, so as to influence the first litho pattern 101 and
The alignment precision of two litho patterns 102.
The content of the invention
It is an object of the present invention to provide a kind of method for improving alignment precision carries out light twice there is provided compound mask version
The alignment precision at quarter.
To achieve these goals, a kind of method for improving alignment precision of the present invention, including：
Compound mask version is provided, the compound mask version includes the first litho pattern and the second photoetching figure of specular
Shape；
First time photoetching process is carried out by mask of first litho pattern；
Second of photoetching process, first time photoetching process and second are carried out by mask of second litho pattern of upset
The figure of secondary photoetching process formation is in the same direction.
Further, first litho pattern and second litho pattern in the horizontal direction or on vertical direction into mirror
As symmetrical.
Further, the step of first time photoetching process is carried out by mask of first litho pattern includes：With described
First litho pattern is that mask is exposed, developed, and forms the substrate with the first litho pattern；With first litho pattern
The substrate described in mask etching, forms the etch layer with the first litho pattern.
Further, in addition to：In exposure process, the thermal expansion to compound mask version is compensated and corrected, to subtract
Small picture distortion.
Further, carry out also including after first time photoetching process：Ion implanting, thin film growth process.
Further, the step of second of photoetching process is carried out by mask of second litho pattern of upset includes：
It is exposed, developed as mask using second litho pattern of upset, forms the substrate with the second litho pattern, the lining
The second litho pattern and the first litho pattern on bottom is in the same direction.
Further, in addition to：In exposure process, using the etch layer with the first litho pattern as alignment and alignment mesh
Mark.
Further, in addition to：In exposure process, the thermal expansion to compound mask version is compensated and corrected, to subtract
Small picture distortion.
Further, the step of second litho pattern of upset includes：Rotate and/or overturn the compound mask
Version；Or change litho machine imaging system；Or realize by way of both are combined.
Further, at least one piece camera lens or eyeglass are increased in litho machine imaging system.
Compared with prior art, the method for raising alignment precision of the invention has the advantages that：
In the present invention, first time photoetching process is carried out by mask of first litho pattern, with described the second of upset
Litho pattern is that mask carries out second of photoetching process so that first time photoetching process and the figure of second of photoetching process formation
In the same direction, so that first time photoetching process is identical with the direction of graphics expansion in second of photo-etching technological process, it is easy to first time light
Needle drawing shape and the contraposition of the second litho pattern, improve alignment precision.
Brief description of the drawings
Fig. 1 is the schematic diagram of litho pattern thermal expansion in the prior art；
Fig. 2 a~Fig. 2 b are the structural representation of two-in-one mask plate in the prior art；
Fig. 3 a are the schematic diagram of the first litho pattern thermal expansion in the prior art；
Fig. 3 b are the schematic diagram of the second litho pattern thermal expansion in the prior art；
Fig. 4 is the first litho pattern in the prior art and the schematic diagram of the second litho pattern contraposition；
Fig. 5 is the flow chart of raising alignment precision method in the present invention；
Fig. 6 a are the structural representation of compound mask version in one embodiment of the invention；
Fig. 6 b are the structural representation of compound mask version in another embodiment of the present invention；
Fig. 7 a are the schematic diagram of the first litho pattern thermal expansion in one embodiment of the invention；
Fig. 7 b are the schematic diagram of the second litho pattern Re Eng in one embodiment of the invention；
Fig. 7 c are the schematic diagram for the second litho pattern thermal expansion that one embodiment of the invention is overturn；
Fig. 8 be one embodiment of the invention in increase the schematic diagram of camera lens or eyeglass in optical imaging systems.
Embodiment
The method of the raising alignment precision of the present invention is described in more detail below in conjunction with schematic diagram, wherein representing
The preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change invention described herein, and still real
The advantageous effects of the existing present invention.Therefore, description below is appreciated that for the widely known of those skilled in the art, and simultaneously
Not as limitation of the present invention.
The present invention is more specifically described by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
The present invention core concept be there is provided it is a kind of improve alignment precision method, including：Compound mask version is provided,
The compound mask version includes the first litho pattern and the second litho pattern of specular；Using first litho pattern to cover
Film carries out first time photoetching process；Second of photoetching process is carried out by mask of second litho pattern of upset, for the first time
Photoetching process and the figure that second of photoetching process is formed are in the same direction.In the present invention, first time photoetching process and second of photoetching work
The direction of graphics expansion is identical during skill, is easy to the contraposition of first time litho pattern and the second litho pattern, improves alignment essence
Degree.
The method for improving alignment precision to the present invention below in conjunction with accompanying drawing is specifically described.
With reference to shown in Fig. 5, the method that alignment precision is improved in the present invention comprises the following steps：
Step S1 is performed, there is provided compound mask version with reference to shown in Fig. 6 a, compound mask version includes the of specular
One litho pattern 201 and the second litho pattern 202, first litho pattern 201 is with second litho pattern 202 vertical
It is mirrored on direction symmetrical.Certainly, in other embodiments of the invention, first litho pattern 201 and second light
Needle drawing shape 202 is mirrored into symmetrically, with reference to shown in Fig. 6 b in the horizontal direction.
Step S2 is performed, is that mask carries out first time photoetching process with first litho pattern 201, specifically, with institute
Stating the step of the first litho pattern 201 carries out first time photoetching process for mask includes：With reference to shown in Fig. 7 a, with first light
Needle drawing shape 201 is that mask is exposed, developed, and is formed in the substrate with the first litho pattern, first time photo-etching technological process
Exposure process in, in addition to：Thermal expansion to compound mask version is compensated and corrected, to reduce picture distortion
Process；Then, using the first litho pattern substrate described in mask etching, the lithography layer with the first litho pattern is formed.
Further, carry out also including after first time photoetching process：Ion implanting, thin film growth process etc..
Step S3 is performed, second of photoetching process, first time light are carried out by mask of second litho pattern of upset
Carving technology and the figure that second of photoetching process is formed are in the same direction.Specifically, being entered using second litho pattern of upset as mask
The step of second of photoetching process of row, includes：It is mask with second litho pattern 202 of upset with reference to shown in Fig. 7 b and 7c
It is exposed, develops, the second litho pattern and the first photoetching figure formed on the substrate with the second litho pattern, the substrate
Just as to including in the present invention, the step of the second litho pattern 202 of upset：Rotate and/or overturn the compound mask
Version；Or change litho machine imaging system；Or realize by way of both are combined.With reference to shown in Fig. 8, in litho machine imaging
Increase at least one piece camera lens or eyeglass in system, to rotate second litho pattern 202.First time photoetching process it is exposed
Cheng Zhong, in addition to：Thermal expansion to compound mask version is compensated and corrected, to reduce the process of picture distortion；Then, with
Second litho pattern is substrate described in mask etching, forms the lithography layer with the second litho pattern.
It should be noted that carrying out second of photoetching process by mask of second litho pattern of upset so that the
Photoetching process and the figure of second of photoetching process formation are in the same direction, so that first time photoetching process and second of photoetching process
During graphics expansion direction it is identical, in the exposure process of second of photoetching process, with the etching with the first litho pattern
Layer is alignment and alignment target, is easy to the contraposition of second of litho pattern and the first litho pattern, improves alignment precision.
In summary, in the method for the raising alignment precision that the present invention is provided, entered using first litho pattern as mask
Row first time photoetching process, second of photoetching process is carried out by mask of second litho pattern of upset so that for the first time
Photoetching process and the figure of second of photoetching process formation are in the same direction, so that first time photoetching process and second of photo-etching technological process
The direction of middle graphics expansion is identical, is easy to the contraposition of first time litho pattern and the second litho pattern, improves alignment precision.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (10)
1. a kind of method for improving alignment precision, it is characterised in that including：
Compound mask version is provided, the compound mask version includes the first litho pattern and the second litho pattern of specular；
First time photoetching process is carried out by mask of first litho pattern；
Second of photoetching process, first time photoetching process and second of light are carried out by mask of second litho pattern of upset
The figure of carving technology formation is in the same direction.
2. the method for alignment precision is improved as claimed in claim 1, it is characterised in that first litho pattern and described the
Two litho patterns are mirrored into symmetrically in the horizontal direction or on vertical direction.
3. the method for alignment precision is improved as claimed in claim 1, it is characterised in that using first litho pattern as mask
The step of carrying out first time photoetching process includes：It is exposed, developed as mask using first litho pattern, being formed has the
The substrate of one litho pattern；Using the first litho pattern substrate described in mask etching, formed with the first litho pattern
Etch layer.
4. the method for alignment precision is improved as claimed in claim 3, it is characterised in that also included：In exposure process, to described
The thermal expansion of compound mask version is compensated and corrected, to reduce picture distortion.
5. the method for alignment precision is improved as claimed in claim 3, it is characterised in that gone back after first time photoetching process
Including：Ion implanting, thin film growth process.
6. the method for alignment precision is improved as claimed in claim 1, it is characterised in that with second litho pattern of upset
The step of carrying out second of photoetching process for mask includes：It is exposed, is shown as mask using second litho pattern of upset
Shadow, the second litho pattern and the first litho pattern formed on the substrate with the second litho pattern, the substrate is in the same direction.
7. the method for alignment precision is improved as claimed in claim 6, it is characterised in that also included：In exposure process, with
The etch layer of first litho pattern is alignment and alignment target.
8. the method for alignment precision is improved as claimed in claim 6, it is characterised in that also included：In exposure process, to described
The thermal expansion of compound mask version is compensated and corrected, to reduce picture distortion.
9. the method for alignment precision is improved as claimed in claim 6, it is characterised in that second litho pattern of upset
Step includes：Rotate and/or overturn the compound mask version；Or change litho machine imaging system；Or be combined by both
Mode is realized.
10. the method for alignment precision is improved as claimed in claim 9, it is characterised in that increased in litho machine imaging system
At least one piece camera lens or eyeglass.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710458343.6A CN107037696B (en) | 2017-06-16 | 2017-06-16 | The method for improving alignment precision |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710458343.6A CN107037696B (en) | 2017-06-16 | 2017-06-16 | The method for improving alignment precision |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107037696A true CN107037696A (en) | 2017-08-11 |
| CN107037696B CN107037696B (en) | 2019-11-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710458343.6A Active CN107037696B (en) | 2017-06-16 | 2017-06-16 | The method for improving alignment precision |
Country Status (1)
| Country | Link |
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| CN (1) | CN107037696B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109799675A (en) * | 2019-01-18 | 2019-05-24 | 成都路维光电有限公司 | A kind of mask plate apparatus and process adjustment method |
| CN113885300A (en) * | 2021-09-14 | 2022-01-04 | 拾斛科技(南京)有限公司 | Wafer alignment microscope, photoetching machine, bonding machine and stamping machine |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4325632A (en) * | 1979-12-18 | 1982-04-20 | Dainippon Screen Seizo Kabushiki Kaisha | Method of photographic printing and a photographic original plate for use therein |
| JPH04369825A (en) * | 1991-06-18 | 1992-12-22 | Dainippon Printing Co Ltd | Method of reticle alignment, and reticle mask and aligner therefor |
| TW200424809A (en) * | 2003-05-01 | 2004-11-16 | Nanya Technology Corp | Photomask structure and method of reducing lens aberration and pattern displacement |
| KR20070077688A (en) * | 2006-01-24 | 2007-07-27 | 주식회사 하이닉스반도체 | Exposural system and method for manufacturing semiconductor device using the same |
| CN103019042A (en) * | 2012-11-29 | 2013-04-03 | 上海华力微电子有限公司 | Method for improving stability of alignment precision of high-transparency mask plate |
-
2017
- 2017-06-16 CN CN201710458343.6A patent/CN107037696B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4325632A (en) * | 1979-12-18 | 1982-04-20 | Dainippon Screen Seizo Kabushiki Kaisha | Method of photographic printing and a photographic original plate for use therein |
| JPH04369825A (en) * | 1991-06-18 | 1992-12-22 | Dainippon Printing Co Ltd | Method of reticle alignment, and reticle mask and aligner therefor |
| TW200424809A (en) * | 2003-05-01 | 2004-11-16 | Nanya Technology Corp | Photomask structure and method of reducing lens aberration and pattern displacement |
| KR20070077688A (en) * | 2006-01-24 | 2007-07-27 | 주식회사 하이닉스반도체 | Exposural system and method for manufacturing semiconductor device using the same |
| CN103019042A (en) * | 2012-11-29 | 2013-04-03 | 上海华力微电子有限公司 | Method for improving stability of alignment precision of high-transparency mask plate |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109799675A (en) * | 2019-01-18 | 2019-05-24 | 成都路维光电有限公司 | A kind of mask plate apparatus and process adjustment method |
| CN109799675B (en) * | 2019-01-18 | 2022-07-15 | 成都路维光电有限公司 | Mask equipment process debugging method |
| CN113885300A (en) * | 2021-09-14 | 2022-01-04 | 拾斛科技(南京)有限公司 | Wafer alignment microscope, photoetching machine, bonding machine and stamping machine |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107037696B (en) | 2019-11-22 |
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