KR20110001144A - Photo mask having transmettance control pattern and method for controlling transmittance of photo mask - Google Patents

Photo mask having transmettance control pattern and method for controlling transmittance of photo mask Download PDF

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Publication number
KR20110001144A
KR20110001144A KR1020090058547A KR20090058547A KR20110001144A KR 20110001144 A KR20110001144 A KR 20110001144A KR 1020090058547 A KR1020090058547 A KR 1020090058547A KR 20090058547 A KR20090058547 A KR 20090058547A KR 20110001144 A KR20110001144 A KR 20110001144A
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KR
South Korea
Prior art keywords
transmittance
pattern
cell
control pattern
transmittance control
Prior art date
Application number
KR1020090058547A
Other languages
Korean (ko)
Inventor
유태준
Original Assignee
주식회사 하이닉스반도체
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 하이닉스반도체 filed Critical 주식회사 하이닉스반도체
Priority to KR1020090058547A priority Critical patent/KR20110001144A/en
Publication of KR20110001144A publication Critical patent/KR20110001144A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/76—Patterning of masks by imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

Abstract

PURPOSE: A photo-mask including a transmittance regulating pattern and a method for regulating the transmittance of the photo-mask are provided to effectively regulate the transmittance of the photo-mask without the damage of the photo-mask by inserting a trench shaped pattern to the edge part of a cell block. CONSTITUTION: A plurality of cell patterns(410) is arranged in the cell region of a transparent substrate(400). A transmittance regulating pattern(420) is arranged around the cell region, in which the cell patterns are arranged, in order to regulate the transmittance of photo-mask. The transmittance regulating pattern is formed into a trench shape. The etched depth(d) of the transmittance regulating pattern is a depth which is capable of reversing the phase of transmitted light as much as 180 degrees.

Description

Photo mask having transmettance control pattern and method for controlling transmittance of photo mask

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device, and more particularly, to a photomask having a transmittance control pattern and a method of adjusting the transmittance of a photomask.

As the degree of integration of semiconductor devices increases, the size of patterns required in the devices decreases rapidly. Accordingly, solutions to increase resolution in order to secure a focus margin in a photolithography process for forming a pattern have been proposed (Resolution Enhancement Technology; RET).

The main purpose of correcting the light transmittance of the photomask is to improve the resolution by removing flare noise of the exposure equipment due to the difference in pattern density. The difference in the pattern density per unit area or the lens flare of the exposure equipment causes a difference in the critical dimension (CD) of the pattern implemented on the wafer.

FIG. 1 is a diagram showing a mask layout (right) of a flash memory and a CD distribution (left) of a cell pattern implemented using this mask layout. 1 illustrates a case in which a phase inversion film pattern is formed only in a cell region of a mask.

As shown, when the pattern is disposed only in the cell region, it can be seen that the CD difference is large due to the difference in pattern density from the center to the edge of the cell region.

Fig. 2 is a diagram showing a photograph (right) showing another example of a mask layout of a flash memory, and a CD distribution (left) of a cell pattern implemented using this mask layout. In FIG. 2, the circumference of the cell region of the mask is filled with a chromium (Cr) film.

As shown in the drawing, when the circumference of the cell region of the photomask is filled with a chromium (Cr) film, the results are reversed from those of FIG. 1.

As described above, the core region and the peripheral circuit region are separated from the cell region due to exposure of a film in which only a cell region exists in the semiconductor device, or a cell region, a core region, and a peripheral circuit region coexist, but for example, double patterning or spacer patterning. When only the area is to be exposed, the CD uniformity of the cell area is very deteriorated. In order to solve this problem, conventionally, the dummy pattern 110 is disposed around the cell region 100 as shown in FIG. 3, or the quartz (Qz) substrate 200 on the back side of the photomask is exposed as shown in FIG. 4. To adjust the transmittance.

However, the method of arranging the dummy pattern shown in FIG. 3 has a problem in that a process is added because the dummy pattern needs to be removed. In the case of the transmittance adjusting method shown in FIG. After measuring the CD of the implemented pattern, the result is fed back and the photomask needs to be processed again, so there is a disadvantage in that time and loss of time follow. In addition, the method of controlling the transmittance of the photomask can give only up to 20% change in transmittance according to the current technology, and thus perfect CD correction is difficult.

SUMMARY OF THE INVENTION The present invention has been made in an effort to provide a photomask and a method of controlling transmittance that can effectively improve the CD uniformity of a pattern by effectively controlling the transmittance of a photomask.

In order to achieve the above technical problem, a photomask according to the present invention is disposed around a cell pattern disposed on a mask substrate in a region corresponding to a cell block of a wafer, and a cell substrate on which the cell patterns are disposed, It characterized in that it comprises a transmittance control pattern consisting of a trench pattern etched to a predetermined depth.

The etching depth of the transmittance control pattern may be a depth such that a phase of light passing through the transmittance control pattern has a phase difference of 180 ° with a phase of light passing through the cell pattern.

The transmittance control pattern may be a pattern that is not implemented on the wafer.

In order to achieve the above technical problem, a method of controlling transmittance of a photomask according to the present invention may include: placing a plurality of cell patterns on a mask substrate corresponding to a cell block of a wafer, and adjusting a transmittance by etching a substrate around the cell block at a predetermined depth; It is characterized by arranging the pattern.

The etching depth of the transmittance control pattern may be a depth such that a phase of light passing through the transmittance control pattern has a phase difference of 180 ° with a phase of light passing through the cell pattern.

The transmittance control pattern may be disposed in a size not implemented on the wafer.

The size or interval of the transmittance control pattern may be determined according to the light source and the illumination system used for exposure.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, embodiments of the present invention may be modified in many different forms, and the scope of the present invention should not be construed as being limited by the embodiments described below.

FIG. 5 is a graph showing the intensity of light when a trench-type transmittance control pattern is disposed around a cell pattern.

First, (A) shows a pattern 310 which exhibits phase shift of 0 ° while having a light transmittance of 100%, and a pattern 320 which exhibits phase shift of 180 ° (π) while also having a light transmittance of 100%. The layout in the case of alternate arrangement is shown. (B) alternately arranges the pattern 310 which exhibits phase shift of 0 ° while having 100% light transmittance and the pattern 320 which exhibits phase shift of 180 ° (π) while having 100% light transmittance. In addition, the layout in the case where the pattern 320a which shows 180 degree phase shift is arrange | positioned around the pattern 310 which shows phase shift of 0 degree is shown. (C) alternates between a pattern 310 representing a phase shift of 0 ° with 76% light transmittance and a pattern 320 representing 180 ° (π) phase shift with 100% light transmittance. The layout in the case of arranging.

Referring to the graph shown in FIG. 5, when the pattern 320a representing the phase shift of 180 ° is disposed around the pattern 310 representing the phase shift of 0 °, the light of the light may be reduced compared to the case of (A). The intensity was significantly lowered to almost the same level as in (C). That is, when the pattern 320a representing the 180 ° phase shift is disposed around the pattern 310 representing the phase shift of 0 °, the light transmittance decreases from 100% to 76%.

The present invention proposes a method of effectively controlling the transmittance without artificially damaging the photomask using such characteristics.

6 is a view illustrating a method for adjusting the transmittance of a photomask for improving the pattern CD uniformity according to the present invention.

Referring to FIG. 6, a plurality of cell patterns 410 are disposed in a cell region of a transparent substrate 400 such as quartz (Qz). The cell pattern 410 may be a phase inversion film pattern made of a molybdenum compound such as molybdenum silicon nitride (MoSiN), or may be a light blocking film pattern made of a light blocking material such as chromium (Cr).

The transmittance control pattern 420 for adjusting the transmittance of the photomask is disposed around the cell area where the plurality of cell patterns 410 are disposed. As shown in the figure, the transmittance control pattern 420 has a trench shape in which a quartz (Qz) substrate 400 is etched to a predetermined depth. The etch depth d of the transmittance control pattern 420 is a depth for inverting the phase of transmitted light 180 °, and the light transmitted through the unetched substrate 400 and the light transmitted through the transmittance control pattern 420. Since this causes mutual interference, the transmittance of the photomask is lowered. The transmittance control pattern 420 may vary in size, number, and separation distance between the patterns according to the type and density of the patterns disposed in the cell region, the light source and the illumination system. In addition, the transmittance control pattern 420 may be disposed around the target pattern to be implemented on the wafer or between the target patterns, and disposed to a size that can be implemented on the photomask substrate, but are not transferred onto the wafer.

7 and 8 are diagrams showing the intensity of light when the transmittance control pattern is arranged at the edge of the cell block to adjust the transmittance of the photomask and the intensity of light when the transmittance control pattern is not arranged.

In the case of FIG. 7 in which the transmittance control pattern is disposed on the edge of the cell block to control the transmittance of the photomask, the intensity of light is significantly reduced compared to FIG. 8, which means that the transmittance of the photomask is lowered.

According to the method for adjusting the transmittance of the photomask according to the present invention, by inserting a trench-type transmittance control pattern pattern for shifting the phase of light 180 ° to the edge of the cell block in which only the cell pattern exists, without damaging the photomask. The transmittance can be effectively controlled. By applying this, by adjusting the transmittance by appropriately placing the transmittance control pattern according to the area of the photomask, it is possible to improve the CD uniformity by adjusting the CD of the pattern implemented on the wafer in a desired direction.

Although the present invention has been described in detail with reference to preferred embodiments, the present invention is not limited to the above embodiments, and various modifications may be made by those skilled in the art within the technical spirit of the present invention. Do.

1 is a diagram illustrating a CD layout of a mask layout of a flash memory and a cell pattern implemented on a wafer using the layout.

2 is a diagram illustrating another example of a mask layout of a flash memory and a CD distribution of a cell pattern implemented on a wafer.

3 and 4 are diagrams for explaining a method of improving the CD uniformity of a conventional cell pattern.

FIG. 5 is a graph showing the intensity of light when a trench-type transmittance control pattern is disposed around a cell pattern.

6 is a view illustrating a method for adjusting the transmittance of a photomask for improving the pattern CD uniformity according to the present invention.

FIG. 7 is a diagram illustrating the intensity of light when the transmittance of the photomask is adjusted by disposing a transmittance adjustment pattern on the edge of the cell block.

8 is a diagram showing the intensity of light when the transmittance adjustment pattern is not arranged.

Claims (7)

Cell patterns disposed on a mask substrate in a region corresponding to the cell block of the wafer; And And a transmittance control pattern formed around the cell block in which the cell patterns are arranged, wherein the transparent substrate comprises a trench pattern etched to a predetermined depth. The method of claim 1, The etching depth of the transmittance control pattern is And the phase of the light passing through the transmittance control pattern has a phase difference of 180 ° with the phase of the light passing through the cell pattern. The method of claim 1, The transmittance control pattern is a photomask, characterized in that the pattern is not implemented on the wafer. Placing a plurality of cell patterns on a mask substrate corresponding to the cell block of the wafer, The method of controlling the transmittance of a photomask, characterized in that the transmittance control pattern is arranged by etching a predetermined depth around the cell block. The method of claim 4, wherein The etching depth of the transmittance control pattern is And the phase of the light passing through the transmittance control pattern has a phase difference of 180 ° with the phase of the light passing through the cell pattern. The method of claim 4, wherein The transmittance control pattern is a method of adjusting the transmittance of the photomask, characterized in that arranged in a size not implemented on the wafer. The method of claim 4, wherein The size or spacing of the transmittance control pattern is determined according to the light source and the illumination system used for exposure.
KR1020090058547A 2009-06-29 2009-06-29 Photo mask having transmettance control pattern and method for controlling transmittance of photo mask KR20110001144A (en)

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Application Number Priority Date Filing Date Title
KR1020090058547A KR20110001144A (en) 2009-06-29 2009-06-29 Photo mask having transmettance control pattern and method for controlling transmittance of photo mask

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Application Number Priority Date Filing Date Title
KR1020090058547A KR20110001144A (en) 2009-06-29 2009-06-29 Photo mask having transmettance control pattern and method for controlling transmittance of photo mask

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9188851B2 (en) 2012-09-04 2015-11-17 Samsung Display Co., Ltd. Pattern mask and method of manufacturing thin film pattern using pattern mask
US9664996B2 (en) 2015-02-24 2017-05-30 SK Hynix Inc. Photomasks for reducing thermal stress generated by heat

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9188851B2 (en) 2012-09-04 2015-11-17 Samsung Display Co., Ltd. Pattern mask and method of manufacturing thin film pattern using pattern mask
US9664996B2 (en) 2015-02-24 2017-05-30 SK Hynix Inc. Photomasks for reducing thermal stress generated by heat
US9841668B2 (en) 2015-02-24 2017-12-12 SK Hynix Inc. Photomasks for reducing thermal stress generated by heat

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