CN107030389A - The processing method of chip - Google Patents
The processing method of chip Download PDFInfo
- Publication number
- CN107030389A CN107030389A CN201610943406.2A CN201610943406A CN107030389A CN 107030389 A CN107030389 A CN 107030389A CN 201610943406 A CN201610943406 A CN 201610943406A CN 107030389 A CN107030389 A CN 107030389A
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- chip
- preset lines
- segmentation preset
- segmentation
- forming step
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
Abstract
The processing method that chip is provided.The chip that at least the 2nd segmentation preset lines in vertically form the 1st segmentation preset lines and the 2nd segmentation preset lines are formed in discontinuous manner is divided into device chip one by one, and the processing method of chip has following steps：1st direction modifies layer forming step, and the 1st direction modification layer is internally formed in chip along the 1st segmentation preset lines；And the 2nd direction modification layer forming step, along the 2nd segmentation preset lines chip be internally formed the 2nd direction modification layer.2nd direction modification floor forming step includes T words road procedure of processing, and floor is modified in the 2nd direction that is internally formed with being formed with the 2nd segmentation preset lines that the 1st segmentation preset lines of the 1st direction modification floor intersect in T words road.It is controlled such that in the procedure of processing of T words road as the focal point of laser beam close to the intersection point on T words road makes the focal point be gradually increasing to the rear side of chip, the laser beam of cone shape is no more than the 1st direction modification layer being initially formed.
Description
Technical field
The present invention relates to the processing method of the chips such as silicon wafer, sapphire wafer.
Background technology
In the chips such as silicon wafer, sapphire wafer, multiple devices such as IC, LSI, LED are divided and shape by splitting preset lines
Into on front, the processed device of the chip is divided into device chip one by one, and the device chip being partitioned into is widely used in shifting
The various electronic equipments such as mobile phone, personal computer.
The widely used dicing method of segmentation of chip, the dicing method uses the topping machanism for being referred to as scriber.Drawing
In piece method, cutting tool is set to be rotated according to 30000rpm or so high speed and cut chip and cut chip, by chip point
Device chip one by one is cut into, on the cutting tool, the abrasive particles such as diamond is reinforced using metal or resin and makes the thickness be
30 μm or so.
On the other hand, in recent years, develop and practical use laser beam and divide the wafer into device core one by one
The method of piece.As the method that device chip one by one is divided the wafer into using laser beam, it is known to following explanation
1st and the 2nd processing method.
1st processing method is following method：The focal point of the laser beam of the wavelength for chip with permeability is determined
Position irradiates laser beam to be formed in inner wafer in the inside of chip corresponding with segmentation preset lines along segmentation preset lines
Layer is modified, external force is then applied to chip by segmenting device and divided the wafer into one by one as segmentation starting point using modifying layer
Device chip (for example, referring to Japanese Patent Publication No. 3408805).
2nd processing method is following method：Have to area illumination corresponding with segmentation preset lines for chip and absorb
Property wavelength (such as 355nm) laser beam, processing groove is formed by ablation, then apply external force and using processing groove as
Segmentation starting point divides the wafer into device chip one by one (for example, referring to Japanese Unexamined Patent Publication 10-305420).
In above-mentioned 1st processing method, processing bits will not be produced, with the scribing based in the past usually used cutting tool
Compare, there is the advantages of minimization of line of cut and anhydrous processing, be widely used.
Also, in the dicing method irradiated based on laser beam, existing can be pre- to substituting segmentation as projected wafer
Alignment (spacing track) is that the chip of non-successional structure is processed such advantage (for example, referring to Japanese Unexamined Patent Publication 10-
No. 123723).In segmentation preset lines are the processing of non-successional chip, according to the setting of segmentation preset lines to laser beam
Output is turned on/off and is processed.
Patent document 1：No. 3408805 publications of Japanese Patent Publication No.
Patent document 2：Japanese Unexamined Patent Publication 10-305420 publications
Patent document 3：Japanese Unexamined Patent Publication 2010-123723 publications
But, it is in the segmentation preset lines extended along the 2nd direction and the segmentation preset lines that are extended along the 1st direction continuity
The near intersections that T words road is met, the problem of existing as follows.
(1) when being initially formed the 1st modification layer in the inside of parallel with one side of device the 1st segmentation preset lines, with this
, there is following ask in when being internally formed the 2nd modification floor of the 2nd segmentation preset lines that the 1st segmentation preset lines intersect in T words road
Topic：As the focal point of laser beam is close to the intersection point on T words road, one of laser beam that the 2nd segmentation preset lines are processed
Divide to the 1st modification layer irradiation formed, and produce the reflection or scattering of laser beam, light is leaked to device area, because being somebody's turn to do
Leak light and bring damage to device, reduce the quality of device.
(2) on the contrary, before modification layer is formed in parallel with one side of device the 1st segmentation preset lines, along with
When the 2nd segmentation preset lines that 1st segmentation preset lines are met in T words road are initially formed modification floor in the inside of chip, exist following
Problem：The traveling for the crackle for producing the modification floor formed from the near intersections on T words road is not present in point of intersection on T words road
The modification layer of blocking, causes crackle to extend 1~2mm or so from the point of intersection on T words road and reach device, reduces the quality of device.
The content of the invention
The present invention be in view of such point and complete, its object is to there is provided the processing method of chip, at least one
When the chip that is formed in discontinuous manner of segmentation preset lines of side is laser machined, the segmentation preset lines of suppression in a side
The near intersections that the segmentation preset lines of end and the opposing party are met in T words road irradiate laser beam, energy to the modification floor formed
The reflection or scattering of the laser beam caused by modifying layer are enough prevented, the damage of the device caused by leak light is prevented.
According to the present invention there is provided a kind of processing method of chip, in the chip, in a plurality of 1st by being formed along the 1st direction
Split preset lines and split each region that preset lines are marked off along the formed with the 2nd direction that the 1st direction intersects a plurality of 2nd
In be formed with device, and at least the 2nd segmentation preset lines in the 1st segmentation preset lines and the 2nd segmentation preset lines are with non-
Continuous mode is formed, and the chip is divided into device chip one by one by the processing method of the chip, it is characterised in that the crystalline substance
The processing method of piece has the steps：1st direction modifies layer forming step, will be for crystalline substance along the 1st segmentation preset lines
The laser beam that piece has the wavelength of permeability converges to the inside of chip from the rear side of chip and is irradiated, in chip
Portion forms along the direction of multilayer the 1st of the 1st segmentation preset lines and modifies layer；2nd direction modifies layer forming step, is implementing this
After 1st direction modification layer forming step, along the 2nd segmentation preset lines, by swashing for the wavelength for chip with permeability
Light beam converges to the inside of chip from the rear side of chip and is irradiated, pre- along the 2nd segmentation in being internally formed for chip
The 2nd direction modification layer of the multilayer of alignment；And segmentation step, implementing the 1st direction modification layer forming step and the 2nd
After direction modification layer forming step, external force is applied to chip, is disconnected using the 1st direction modification layer and the 2nd direction modification layer
Split starting point and wafer breakage be divided into device chip one by one along the 1st segmentation preset lines and the 2nd segmentation preset lines,
2nd direction modification floor forming step includes T words road procedure of processing, relative to being formed with the 1st of the 1st direction modification layer
The 2nd direction that is internally formed for the 2nd segmentation preset lines that segmentation preset lines intersect in T words road modifies floor, in T words road processing
In step, it is controlled such that as the focal point of laser beam close to the intersection point on T words road makes the back of the body of the focal point to chip
Surface side is gradually increasing, and the laser beam of cone shape is modified layer no more than the 1st direction.
According to the processing method of the chip of the present invention, due in the procedure of processing of T words road, being controlled such that with sharp
The focal point of light beam makes the focal point be gradually increasing to the rear side of chip close to the intersection point on T words road, makes swashing for cone shape
Light beam modifies layer no more than the 1st direction, therefore the laser beam of cone shape will not be with the 1st side when forming the 2nd direction modification layer
To modification layer conflict, therefore the leak light caused by the scattering or reflection of laser beam will not be produced, therefore, it is possible to stop a leak
Light attacks device and brings the problem of damage is such to device.Therefore, it is possible in the case where not reducing the quality of device, along
Segmentation preset lines are internally formed appropriate modification layer chip.
Brief description of the drawings
Fig. 1 is the stereogram of the laser processing device for the processing method for being suitable for carrying out the chip of the present invention.
Fig. 2 is the block diagram of laser beam producing unit.
Fig. 3 is the stereogram for the semiconductor wafer that the suitable processing method using chip of the invention is processed.
Fig. 4 is to show that the 1st direction modifies the stereogram of layer forming step.
Fig. 5 is to show that the 1st direction modifies the schematic cross sectional views of layer forming step.
Fig. 6 is the schematic plan for showing T words road procedure of processing.
Fig. 7 is the sectional view for showing T words road procedure of processing.
Fig. 8 is the stereogram of segmenting device.
Fig. 9 (A), (B) is the sectional view for showing segmentation step.
Label declaration
11：Semiconductor wafer；13a：1st segmentation preset lines；13b：2nd segmentation preset lines；15：Device；17：1st direction
Modify layer；19：2nd direction modifies layer；24：Chuck table；34：Laser beam irradiation unit；35：Laser beam producing unit；38：
Concentrator (laser head)；40：Shooting unit；50：Segmenting device.
Embodiment
Hereinafter, embodiments of the present invention are described in detail referring to the drawings.Reference picture 1, shows to be suitable for carrying out this
The stereogram of the laser processing device 2 of the processing method of the chip of invention embodiment.Laser processing device 2 is quiet comprising being mounted in
Only a pair of guide rails 6 extended in the Y-axis direction on base station 4.
Y-axis is moved by the Y-axis feed mechanism (Y-axis feed unit) 14 being made up of ball-screw 10 and pulse motor 12
Block 8 is moved on index feed direction, i.e. Y direction.A pair extended in the X-axis direction are fixed with Y-axis movable block 8 to lead
Rail 16.
By the X-axis feed mechanism (X-axis feed unit) 28 being made up of ball-screw 20 and pulse motor 22 in guide rail
X-axis movable block 18 is guided on 16 so as to the mobile X-axis movable block 18 in processing direction of feed, i.e. X-direction.
On X-axis movable block 18 chuck table 24 is equipped with via cylindric supporting member 30.In chuck table 24
On be equipped with multiple (the being in the present embodiment 4) fixtures 26 clamped to the ring-shaped frame F shown in Fig. 4.
Post 32 stands up the rear of pedestal 4.The housing 36 of laser beam irradiation unit 34 is fixed with post 32.Laser
Beam illumination unit 34 is included：Laser beam producing unit 35, it is accommodated in housing 36；And concentrator (laser head) 38, it is pacified
Front end loaded on housing 36.Concentrator 38 in the way of fine motion on above-below direction (Z-direction) can be installed on housing 36.
As shown in Fig. 2 laser beam producing unit 35 is included：The laser such as YAG laser oscillators or YVO4 laser oscillators
Oscillator 42, it vibrates the pulse laser that wavelength is 1342nm；Repetition rate setup unit 44；Pulse width adjustment unit
46；And power adjustment unit 48, it is adjusted to the power that the pulse laser beam is vibrated from laser oscillator 42.
Shooting unit 40 is equipped with the front end of the housing 36 of laser beam irradiation unit 34, the shooting unit 40 has to protecting
Hold microscope and camera that the chip 11 on chuck table 24 is shot.Concentrator 38 is with shooting unit 40 in X-axis
Arranged in entire column on direction.
Reference picture 3, show to fit through semiconductor wafer that the processing method of the chip of the present invention is processed (it is following,
Sometimes referred to simply as chip) 11 face side stereogram.With being formed with the positive 11a of chip 11 in the 1st direction continuity from above
Split preset lines 13a and splitting what is formed to noncontinuity on the vertical directions of preset lines 13a with the 1st in a plurality of 1st formed
A plurality of 2nd segmentation preset lines 13b, is formed in the region marked off by the 1st segmentation preset lines 13a and the 2nd segmentation preset lines 13b
The devices such as LSI 15.
When implementing the processing method of chip of embodiment of the present invention, on chip 11, following framework is become
The form of unit：The front of chip 11 is glued to the dicing tape T as splicing tape that peripheral part is pasted onto on ring-shaped frame F
On, chip 11 is attracted to maintain, ring-type frame with being positioned in the form of the frame unit on chuck table 24 via dicing tape T
Frame F is clamped and be fixed by fixture 26.
Although not illustrating especially, in the processing method of the chip of the present invention, implement alignment first, will be by chuck work
Make the attracting holding of platform 24 chip 11 be positioned at laser processing device 2 shooting unit 40 underface, pass through shooting unit 40
Chip 11 is shot, makes the 1st segmentation preset lines 13a and concentrator 38 permutation in the X-axis direction.
Then, after chuck table 24 is rotated by 90 °, on the direction vertical with the 1st segmentation preset lines 13a
2nd segmentation preset lines 13b of elongation also implements identical alignment, and the data of alignment are stored in the control of laser processing device 2
In the RAM of device.
Because the shooting unit 40 of laser processing device 2 generally has infrared camera, therefore, it is possible to infrared by this
Line camera and it is predetermined to the 1st and the 2nd segmentation that is formed on positive 11a through chip 11 from the back side 11b sides of chip 11
Line 13a, 13b are detected.
After alignment is implemented, implement the 1st direction modification layer forming step, along the 1st segmentation preset lines 13a in chip 11
It is internally formed the 1st direction modification layer 17.In the 1st direction modification layer forming step, as shown in Figure 4 and Figure 5, pass through concentrator
38 are positioned at the focal point of the laser beam of the wavelength for chip with permeability (being, for example, 1342nm) inside of chip 11,
And from the lateral 1st segmentation preset lines 13a irradiations of back side 11b of chip 11, and in Figure 5 on arrow X1 directions to chuck table
24 are processed feeding, thus modify layer 17 in being internally formed along the 1st segmentation preset lines 13a the 1st direction for chip 11.
It is preferred that concentrator 38 is periodically moved upward, and it is predetermined along the 1st segmentation in being internally formed for chip 11
The 1st direction modification layer 17 of line 13a multilayer, such as 5 layer the 1st direction modification layer 17.
Modify layer 17 and represent that density, refractive index, mechanical strength or other physical characteristic are in and different shape around
The region of state, is formed as resolidification layer is dissolved.The processing conditions of 1st direction modification layer forming step is for example set to
It is as follows.
Light source：LD excitation Q-switch Nd：YVO4 pulse lasers
Wavelength：1342nm
Repetition rate：50kHz
Average output：0.5W
Optically focused spot diameter：
Process feed speed：200mm/s
After the 1st direction modification layer forming step is implemented, implement the 2nd direction modification layer forming step, along extension
The 2nd segmentation preset lines 13b that the end in direction (prolonging direction) is met with the 1st segmentation preset lines 13a in T words road, will be for crystalline substance
The laser beam that piece 11 has the wavelength (being, for example, 1342nm) of permeability is focused at the inside of chip 11 and is irradiated, in chip
11 be internally formed along the 2nd segmentation preset lines 13b the 2nd direction modifies layer 19.
In the 2nd direction modification layer forming step, after chuck table 24 is rotated by 90 °, in chip 11
Portion forms along the 2nd direction of the 2nd segmentation preset lines 13b multilayer and modifies layer 19.
2nd direction modification floor forming step includes T words road procedure of processing, with being formed with the 1st of the 1st direction modification layer 17
The 2nd segmentation preset lines 13b's that segmentation preset lines 13a intersects in T words road is internally formed the 2nd direction modification floor 19.
7 pairs of the reference picture T words road procedure of processing is illustrated.Here, due to the interior collector lens located at concentrator 38
Numerical aperture is generally set to larger value, therefore laser beam LB is converged to the cone shape shown in Fig. 7.
In the T words road procedure of processing of the present invention, it is controlled such that as Fig. 6 and as shown in Figure 7, with laser beam
LB focal point makes laser beam LB focal point gradually rise to the back side 11b sides of chip 11 close to the intersection point on T words road, makes circle
The laser beam LB of a cone-shaped part is no more than the 1st direction modification layer 17 being initially formed.
Also it is controlled such that and is approached with laser beam LB focal point when the 2nd direction for forming multilayer modifies layer 19
The intersection point on T words road and focal point is gradually increasing to the back side 11b sides of chip 11, make the laser beam LB of a cone shape part
Layer 17 is modified no more than the 1st direction being initially formed.
Due to having distinguished the X for the position that the 2nd segmentation preset lines 13b and the 1st segmentation preset lines 13a meet in T words road in advance
Coordinate, Y-coordinate, therefore they are pre-stored in the memory of the controller of laser processing device 2.Also, make laser beam
The coordinate for the focal point that LB focal point is gradually increasing also is pre-saved in memory.
By so pre-saving the coordinate value of focal point in memory, the controller of laser processing device 2 is automatically
The position for the focal point being controlled such that in the procedure of processing of T words road is gradually increasing to the back side 11b sides of chip 11.
In the T words road procedure of processing of the present invention, due to being controlled such that the focal point with laser beam LB close to T
The intersection point on word road and focal point is gradually increasing to the back side 11b sides of chip 11, make the laser beam LB of a cone shape part
Layer 17 is modified no more than the 1st direction that is initially formed, therefore the laser beam of cone shape will not be with when implementing T words road procedure of processing
1st direction modification layer 17 conflicts, and will not produce the leak light caused by the scattering or reflection of laser beam.Thus, it is possible to eliminate
The problem of damage being brought because of leak light attack device 15 to device 15.
After the 1st direction modification layer forming step and the 2nd direction modification layer forming step is implemented, implement segmentation step
Suddenly, external force is applied to chip 11, layer 17 and the 2nd direction modification layer 19 is modified for break origins along the 1st segmentation with the 1st direction
Chip 11 is broken by the segmentations of preset lines 13a and the 2nd preset lines 13b, and is divided into device chip one by one.
The segmentation step is use example segmenting device as shown in Figure 8 (expanding unit) 50 and implemented.Point shown in Fig. 8
Cutting device 50 has：Framework holding unit 52, it keeps to ring-shaped frame F；And with expanding element 54, it is protected to framework
The dicing tape T assembled on the ring-shaped frame F that unit 52 is kept is held to be extended.
Framework holding unit 52 by ring-type frame retention feature 56 and be disposed on the periphery of frame retention feature 56
Constituted as multiple fixtures 58 of fixed cell.The upper surface of frame retention feature 56 is formed with to be loaded to ring-shaped frame F
Mounting surface 56a, be placed with ring-shaped frame F on mounting surface 56a.
Also, placed ring-shaped frame F is fixed on framework holding unit 52 by fixture 58 on mounting surface 56a.Such structure
Into framework holding unit 52 supported by band expanding element 54 can to move in the vertical direction.
There is the extension drum 60 of the inner side for the frame retention feature 56 for being disposed in ring-type with expanding element 54.Extend drum 60
Covered 62 closing in upper end.The extension drum 60 has the internal diameter than ring-shaped frame F small and scribing than being assembled on ring-shaped frame F
The big internal diameter of external diameter with the chip 11 pasted on T.
Extension drum 60 has the support lug 64 being integrally formed in its lower end.Also having with expanding element 54 makes ring-type
The driver element 66 that frame retention feature 56 is moved in the vertical direction.What the driver element 66 was arranged in support lug 64
Multiple cylinders 68 are constituted, and the lower surface of its piston rod 70 and frame retention feature 56 links.
The driver element 66 being made up of multiple cylinders 68 makes the frame retention feature 56 of ring-type in reference position and extension bits
Moved in the vertical direction between putting, the reference position be frame retention feature 56 mounting surface 56a with as extend drum 60
The front of the lid 62 of upper end turns into the position of substantially sustained height, and the expanding location is more defined on the lower than the upper end for extending drum 60
Amount.
The segmentation step for the chip 11 that 9 pairs of reference picture is implemented using the segmenting device 50 constituted as above is said
It is bright.As shown in Fig. 9 (A), the ring-shaped frame F that chip 11 is carry across dicing tape T is positioned in frame retention feature 56
On mounting surface 56a, and frame retention feature 56 is fixed on by fixture 58.Now, frame retention feature 56 is positioned in it
Mounting surface 56a and extension drum 60 upper end are the reference position for essentially becoming sustained height.
Then, cylinder 68 is driven and frame retention feature 56 is dropped to the expanding location shown in Fig. 9 (B).
Thus, the ring-shaped frame F fixed on the mounting surface 56a by making frame retention feature 56 declines, therefore is assemblied in ring-type frame
Frame F dicing tape T is abutted with the upper edge of extension drum 60 and mainly extended in the radial direction.
Its result, which is that pulling force is radial, acts on the chip 11 pasted on dicing tape T.When such pulling force is radial
When acting on chip 11, modify layer 17 along the 1st direction of the 1st segmentation preset lines 13a formation and split preset lines along the 2nd
The 2nd direction modification layer 19 of 13b formation turns into segmentation starting point, and chip splits the segmentation preset lines of preset lines 13a and the 2nd along the 1st
13b is broken, and is divided into device chip 21 one by one.
In the above-described embodiment, semiconductor die is illustrated as the chip of the processing object of the processing method of the present invention
Piece 11, but the chip not limited to this of the processing object as the present invention, for regarding sapphire as optical device wafer of substrate etc.
Other chips, also can be similarly using the processing method of the present invention.
Claims (1)
1. in a kind of processing method of chip, the chip, a plurality of 1st segmentation preset lines by being formed along the 1st direction and along with
Device is formed with each region that a plurality of 2nd segmentation preset lines that the 2nd direction that 1st direction intersects is formed are marked off, and
And the 1st segmentation preset lines and the 2nd segmentation preset lines at least the 2nd segmentation preset lines formed in discontinuous manner,
The chip is divided into device chip one by one by the processing method of the chip, it is characterised in that
The processing method of the chip has the steps：
1st direction modifies layer forming step, along the 1st segmentation preset lines, by swashing for the wavelength for chip with permeability
Light beam converges to the inside of chip from the rear side of chip and is irradiated, pre- along the 1st segmentation in being internally formed for chip
The 1st direction modification layer of the multilayer of alignment；
2nd direction modifies layer forming step, pre- along the 2nd segmentation after the 1st direction modification layer forming step is implemented
Alignment, converges to the inside of chip from the rear side of chip by the laser beam of the wavelength for chip with permeability and shines
Penetrate, layer is modified in being internally formed along the 2nd direction of the multilayer of the 2nd segmentation preset lines for chip；And
Segmentation step is right after the 1st direction modification layer forming step and the 2nd direction modification layer forming step is implemented
Chip applies external force, using the 1st direction modification layer and the 2nd direction modify layer as break origins by the chip along the 1st
Segmentation preset lines and the 2nd split predetermined thread breakage and are divided into device chip one by one,
2nd direction modification floor forming step includes following T words road procedure of processing：With being formed with the 1st direction modification layer
The 1st segmentation preset lines intersecting 2nd segmentation preset lines in T words road be internally formed the 2nd direction modification floor,
In the T words road procedure of processing, it is controlled such that as the focal point of laser beam close to the intersection point on T words road makes this
Focal point is gradually increasing to the rear side of chip, the laser beam of cone shape is modified layer no more than the 1st direction.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-217353 | 2015-11-05 | ||
| JP2015217353A JP6576212B2 (en) | 2015-11-05 | 2015-11-05 | Wafer processing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107030389A true CN107030389A (en) | 2017-08-11 |
| CN107030389B CN107030389B (en) | 2020-06-12 |
Family
ID=58739882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610943406.2A Active CN107030389B (en) | 2015-11-05 | 2016-11-01 | Method for processing wafer |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6576212B2 (en) |
| KR (1) | KR102488216B1 (en) |
| CN (1) | CN107030389B (en) |
| TW (1) | TWI685886B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109524358A (en) * | 2017-09-20 | 2019-03-26 | 东芝存储器株式会社 | Semiconductor device and its manufacturing method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6855127B2 (en) * | 2017-06-05 | 2021-04-07 | 株式会社ディスコ | Chip manufacturing method |
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Also Published As
| Publication number | Publication date |
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| TWI685886B (en) | 2020-02-21 |
| TW201719729A (en) | 2017-06-01 |
| JP6576212B2 (en) | 2019-09-18 |
| KR20170053113A (en) | 2017-05-15 |
| CN107030389B (en) | 2020-06-12 |
| JP2017092128A (en) | 2017-05-25 |
| KR102488216B1 (en) | 2023-01-12 |
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