CN107068616A - The processing method of chip - Google Patents
The processing method of chip Download PDFInfo
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- CN107068616A CN107068616A CN201610943409.6A CN201610943409A CN107068616A CN 107068616 A CN107068616 A CN 107068616A CN 201610943409 A CN201610943409 A CN 201610943409A CN 107068616 A CN107068616 A CN 107068616A
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- 238000003672 processing method Methods 0.000 title claims abstract description 26
- 230000011218 segmentation Effects 0.000 claims abstract description 83
- 230000004048 modification Effects 0.000 claims abstract description 33
- 238000012986 modification Methods 0.000 claims abstract description 33
- 230000035699 permeability Effects 0.000 claims description 7
- 230000014759 maintenance of location Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000002459 sustained effect Effects 0.000 description 2
- 229910017502 Nd:YVO4 Inorganic materials 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/352—Working by laser beam, e.g. welding, cutting or boring for surface treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
Abstract
The processing method that chip is provided.The chip that at least the 2nd segmentation preset lines in vertically form the 1st segmentation preset lines and the 2nd segmentation preset lines are formed in discontinuous manner is divided into device chip one by one, and the processing method of the chip has the steps：1st direction modifies layer forming step, and the 1st direction modification layer is internally formed in chip along the 1st segmentation preset lines；And the 1st segmentation step, external force is applied to chip, it is the cutting plate that wafer breakage is divided into multiple strips along the 1st segmentation preset lines by break origins to modify layer using the 1st direction, and by the interval expansion of adjacent cutting plate.The processing method of chip is also included：2nd direction modifies layer forming step, after the implementation of the 1st segmentation step, and the 2nd direction modification layer is internally formed in chip；And the 2nd segmentation step, external force is applied to chip and device chip one by one is divided the wafer into.
Description
Technical field
The present invention relates to the processing method of the chips such as silicon wafer, sapphire wafer.
Background technology
In the chips such as silicon wafer, sapphire wafer, multiple devices such as IC, LSI, LED are divided and shape by splitting preset lines
Into on front, the processed device of the chip is divided into device chip one by one, and the device chip being partitioned into is widely used in shifting
The various electronic equipments such as mobile phone, personal computer.
The widely used dicing method of segmentation of chip, the dicing method uses the topping machanism for being referred to as scriber.Drawing
In piece method, cutting tool is set to be rotated according to 30000rpm or so high speed and cut chip and cut chip, by chip point
Device chip one by one is cut into, on the cutting tool, the abrasive particles such as diamond is reinforced using metal or resin and makes the thickness be
30 μm or so.
On the other hand, in recent years, develop and practical use laser beam and divide the wafer into device core one by one
The method of piece.As the method that device chip one by one is divided the wafer into using laser beam, it is known to following explanation
1st and the 2nd processing method.
1st processing method is following method：The focal point of the laser beam of the wavelength for chip with permeability is determined
Position irradiates laser beam to be formed in inner wafer in the inside of chip corresponding with segmentation preset lines along segmentation preset lines
Layer is modified, external force is then applied to chip by segmenting device and divided the wafer into one by one as segmentation starting point using modifying layer
Device chip (for example, referring to Japanese Patent Publication No. 3408805).
2nd processing method is following method：Have to area illumination corresponding with segmentation preset lines for chip and absorb
Property wavelength (such as 355nm) laser beam, processing groove is formed by ablation, then apply external force and using processing groove as
Segmentation starting point divides the wafer into device chip one by one (for example, referring to Japanese Unexamined Patent Publication 10-305420).
In above-mentioned 1st processing method, processing bits will not be produced, with the scribing based in the past usually used cutting tool
Compare, there is the advantages of minimization of line of cut and anhydrous processing, be widely used.
Also, in the dicing method irradiated based on laser beam, existing can be pre- to substituting segmentation as projected wafer
Alignment (spacing track) is that the chip of non-successional structure is processed such advantage (for example, referring to Japanese Unexamined Patent Publication 10-
No. 123723).In segmentation preset lines are the processing of non-successional chip, according to the setting of segmentation preset lines to laser beam
Output is turned on/off and is processed.
Patent document 1：No. 3408805 publications of Japanese Patent Publication No.
Patent document 2：Japanese Unexamined Patent Publication 10-305420 publications
Patent document 3：Japanese Unexamined Patent Publication 2010-123723 publications
But, it is in the segmentation preset lines extended along the 2nd direction and the segmentation preset lines that are extended along the 1st direction continuity
The near intersections that T words road is met, the problem of existing as follows.
(1) when being initially formed the 1st modification layer in the inside of parallel with one side of device the 1st segmentation preset lines, with this
, there is following ask in when being internally formed the 2nd modification floor of the 2nd segmentation preset lines that the 1st segmentation preset lines intersect in T words road
Topic：As the focal point of laser beam is close to the intersection point on T words road, one of laser beam that the 2nd segmentation preset lines are processed
Divide to the 1st modification layer irradiation formed, and produce the reflection or scattering of laser beam, light is leaked to device area, because being somebody's turn to do
Leak light and bring damage to device, reduce the quality of device.
(2) on the contrary, before modification layer is formed in parallel with one side of device the 1st segmentation preset lines, along with
When the 2nd segmentation preset lines that 1st segmentation preset lines are met in T words road are initially formed modification floor in the inside of chip, exist following
Problem：The traveling for the crackle for producing the modification floor formed from the near intersections on T words road is not present in point of intersection on T words road
The modification layer of blocking, causes crackle to extend 1~2mm or so from the point of intersection on T words road and reach device, reduces the quality of device.
The content of the invention
The present invention be in view of such point and complete, its object is to there is provided the processing method of chip, at least one
When the chip that is formed in discontinuous manner of segmentation preset lines of side is laser machined, the segmentation preset lines of suppression in a side
The near intersections that the segmentation preset lines of end and the opposing party are met in T words road irradiate laser beam, energy to the modification floor formed
The reflection or scattering of the laser beam caused by modifying layer are enough prevented, the damage of the device caused by leak light is prevented.
According to the present invention there is provided a kind of processing method of chip, in the chip, in a plurality of 1st by being formed along the 1st direction
Split preset lines and split each region that preset lines are marked off along the formed with the 2nd direction that the 1st direction intersects a plurality of 2nd
In be formed with device, and at least the 2nd segmentation preset lines in the 1st segmentation preset lines and the 2nd segmentation preset lines are with non-
Continuous mode is formed, and the chip is divided into device chip one by one by the processing method of the chip, it is characterised in that the crystalline substance
The processing method of piece has the steps：1st direction modifies layer forming step, will be for crystalline substance along the 1st segmentation preset lines
The laser beam that piece has the wavelength of permeability converges to the inside of chip from the rear side of chip and is irradiated, in chip
Portion forms along the 1st direction of the multilayer of the 1st segmentation preset lines and modifies layer；1st segmentation step, is implementing the 1st direction
Modify after layer forming step, external force applied to chip, using the 1st direction modify layer as break origins by chip along the 1st
Split predetermined thread breakage and divide the wafer into multiple strip cutting plates, and the interval of adjacent strip cutting plate is expanded
Greatly；2nd direction modifies layer forming step, after the 1st segmentation step is implemented, will be for along the 2nd segmentation preset lines
The laser beam that chip has the wavelength of permeability converges to the inside of chip from the rear side of chip and is irradiated, in chip
It is internally formed along the 2nd direction of the multilayer of the 2nd segmentation preset lines and modifies layer；And the 2nd segmentation step, implement this
After 2 directions modification layer forming step, external force is applied to the chip for being divided into multiple strip cutting plates, with the 2nd direction
Modification layer, which is break origins, to be split predetermined thread breakage along the 2nd by chip and divides the wafer into device chip one by one.
According to the processing method of the chip of the present invention, due to dividing the wafer into multiple length in the 1st segmentation step of implementation
The cutting plate of bar shaped and after the interval of the cutting plate of adjacent strip is expanded, implements the 2nd direction modification layer forming step
With the 2nd segmentation step, it is predetermined in the 2nd segmentation preset lines and the 1st segmentation therefore when implementing the 2nd direction modification layer forming step
Line in T words road meet be formed in part with gap, even if therefore to the gap portion irradiate laser beam, will not also produce attack device
The leak light of part, can be eliminated because leak light attacks device and brings the problem of damage is such to device.Therefore, it is possible to not drop
In the case of the quality of low device, appropriate modification layer is internally formed in chip along segmentation preset lines.
Brief description of the drawings
Fig. 1 is the stereogram of the laser processing device for the processing method for being suitable for carrying out the chip of the present invention.
Fig. 2 is the block diagram of laser beam producing unit.
Fig. 3 is the stereogram for the semiconductor wafer that the suitable processing method using chip of the invention is processed.
Fig. 4 is to show that the 1st direction modifies the stereogram of layer forming step.
Fig. 5 is to show that the 1st direction modifies the schematic cross sectional views of layer forming step.
Fig. 6 is to show that the 1st direction modifies the schematic plan of layer forming step.
Fig. 7 is the schematic plan of the chip after the 1st segmentation step is implemented.
Fig. 8 is that the schematic plan that layer forming step is illustrated is modified to the 2nd direction.
Fig. 9 is the stereogram of segmenting device.
Figure 10 (A), (B) is the sectional view for showing the 2nd segmentation step.
Label declaration
11：Semiconductor wafer；13a：1st segmentation preset lines；13b：2nd segmentation preset lines；15：Device；17：1st direction
Modify layer；17a：It is spaced in (gap)；19：2nd direction modifies layer；24：Chuck table；34：Laser beam irradiation unit；35：Swash
Beam generation unit；38：Concentrator (laser head)；40：Shooting unit；50：Segmenting device.
Embodiment
Hereinafter, embodiments of the present invention are described in detail referring to the drawings.Reference picture 1, shows to be suitable for carrying out this
The stereogram of the laser processing device 2 of the processing method of the chip of invention embodiment.Laser processing device 2 is quiet comprising being mounted in
Only a pair of guide rails 6 extended in the Y-axis direction on base station 4.
Y-axis is moved by the Y-axis feed mechanism (Y-axis feed unit) 14 being made up of ball-screw 10 and pulse motor 12
Block 8 is moved on index feed direction, i.e. Y direction.A pair extended in the X-axis direction are fixed with Y-axis movable block 8 to lead
Rail 16.
By the X-axis feed mechanism (X-axis feed unit) 28 being made up of ball-screw 20 and pulse motor 22 in guide rail
X-axis movable block 18 is guided on 16 so as to the mobile X-axis movable block 18 in processing direction of feed, i.e. X-direction.
On X-axis movable block 18 chuck table 24 is equipped with via cylindric supporting member 30.In chuck table 24
On be equipped with multiple (the being in the present embodiment 4) fixtures 26 clamped to the ring-shaped frame F shown in Fig. 4.
Post 32 stands up the rear of pedestal 4.The housing 36 of laser beam irradiation unit 34 is fixed with post 32.Laser
Beam illumination unit 34 is included：Laser beam producing unit 35, it is accommodated in housing 36；And concentrator (laser head) 38, it is pacified
Front end loaded on housing 36.Concentrator 38 in the way of fine motion on above-below direction (Z-direction) can be installed on housing 36.
As shown in Fig. 2 laser beam producing unit 35 is included：The laser such as YAG laser oscillators or YVO4 laser oscillators
Oscillator 42, it vibrates the pulse laser that wavelength is 1342nm；Repetition rate setup unit 44；Pulse width adjustment unit
46；And power adjustment unit 48, it is adjusted to the power that the pulse laser beam is vibrated from laser oscillator 42.
Shooting unit 40 is equipped with the front end of the housing 36 of laser beam irradiation unit 34, the shooting unit 40 has to protecting
Hold microscope and camera that the chip 11 on chuck table 24 is shot.Concentrator 38 is with shooting unit 40 in X-axis
Arranged in entire column on direction.
Reference picture 3, show to fit through semiconductor wafer that the processing method of the chip of the present invention is processed (it is following,
Sometimes referred to simply as chip) 11 face side stereogram.With being formed with the positive 11a of chip 11 in the 1st direction continuity from above
Split preset lines 13a and splitting what is formed to noncontinuity on the vertical directions of preset lines 13a with the 1st in a plurality of 1st formed
A plurality of 2nd segmentation preset lines 13b, is formed in the region marked off by the 1st segmentation preset lines 13a and the 2nd segmentation preset lines 13b
The devices such as LSI 15.
When implementing the processing method of chip of embodiment of the present invention, on chip 11, following framework is become
The form of unit：The front of chip 11 is glued to the dicing tape T as splicing tape that peripheral part is pasted onto on ring-shaped frame F
On, chip 11 is attracted to maintain, ring-type frame with being positioned in the form of the frame unit on chuck table 24 via dicing tape T
Frame F is clamped and be fixed by fixture 26.
Although not illustrating especially, in the processing method of the chip of the present invention, implement alignment first, will be by chuck work
Make the attracting holding of platform 24 chip 11 be positioned at laser processing device 2 shooting unit 40 underface, pass through shooting unit 40
Chip 11 is shot, makes the 1st segmentation preset lines 13a and concentrator 38 permutation in the X-axis direction.
Then, after chuck table 24 is rotated by 90 °, on the direction vertical with the 1st segmentation preset lines 13a
2nd segmentation preset lines 13b of elongation also implements identical alignment, and the data of alignment are stored in the control of laser processing device 2
In the RAM of device.
Because the shooting unit 40 of laser processing device 2 generally has infrared camera, therefore, it is possible to infrared by this
Line camera and it is predetermined to the 1st and the 2nd segmentation that is formed on positive 11a through chip 11 from the back side 11b sides of chip 11
Line 13a, 13b are detected.
After alignment is implemented, implement the 1st direction modification layer forming step, along the 1st segmentation preset lines 13a in chip 11
It is internally formed the 1st direction modification layer 17.In the 1st direction modification layer forming step, as shown in Figure 4 and Figure 5, pass through concentrator
38 are positioned at the focal point of the laser beam of the wavelength for chip with permeability (being, for example, 1342nm) inside of chip 11,
And from the lateral 1st segmentation preset lines 13a irradiations of back side 11b of chip 11, on chuck table 24 in Figure 5 arrow X1 directions
Feeding is processed, thus layer 17 is modified in being internally formed along the 1st segmentation preset lines 13a the 1st direction for chip 11.
It is preferred that concentrator 38 is periodically moved upward, and it is predetermined along the 1st segmentation in being internally formed for chip 11
The 1st direction modification layer 17 of line 13a multilayer, such as 5 layer the 1st direction modification layer 17.Fig. 6 is the 1st direction modification layer formation step
The schematic plan of chip 11 after rapid implementation.
Modify layer 17 and represent that density, refractive index, mechanical strength or other physical characteristic are in and different shape around
The region of state, is formed as resolidification layer is dissolved.The processing conditions of 1st direction modification layer forming step is for example set to
It is as follows.
Light source：LD excitation Q-switch Nd：YVO4 pulse lasers
Wavelength：1342nm
Repetition rate：50kHz
Average output：0.5W
Optically focused spot diameter：
Process feed speed：200mm/s
After the 1st direction modification layer forming step is implemented, chip 11 is peeled off from dicing tape T, and by chip 11
Positive 11a sides are pasted onto on the splicing tape with autgmentability.Also, by the direction vertical with the 1st segmentation preset lines 13a
The two ends of splicing tape are pulled, and chip 11 is modified into layer 17 with the 1st direction and is divided into multiple strips for break origins fracture
Cutting plate, and as shown in fig. 7, interval (gap) 17a of adjacent cutting plate is expanded into (the 1st segmentation step).
After the 1st segmentation step is implemented, the positive 11a of the chip 11 of the cutting plate of multiple strips will be divided into
Peripheral part as shown in FIG. 4 is pasted on to be secured on the dicing tape T as splicing tape on ring-shaped frame F and make chip 11
Mode as frame unit.
Then, the chip 11 of the frame unit is entered across dicing tape T using the chuck table 24 of laser processing device 2
Row attracting holding.Also, implement the 2nd direction modification layer forming step, along the 2nd segmentation preset lines 13b, will have for chip 11
The laser beam for having the wavelength of permeability converges to the inside of chip 11 from the back side 11b sides of chip 11 and is irradiated, in chip
11 be internally formed along the 2nd direction of the 2nd segmentation preset lines 13b multilayer modifies layer 19.Fig. 8 shows that the 2nd direction is modified
The schematic plan of chip 11 after layer forming step implementation.
In the 2nd direction modification layer forming step, the gap 17a portions preferably between the cutting plate of adjacent strip
Divide the irradiation for stopping laser beam.Even if laser beam somewhat transfinites and is irradiated to gap 17a parts, letting out for laser beam will not be also produced
Light leak, can eliminate the problem of bringing damage to device 15 because of leak light attack device 15.
After the 2nd direction modification layer forming step is implemented, implement the 2nd segmentation step, external force is applied to chip 11, with
2nd direction modification layer 19 is break origins, is broken chip 11 along the 2nd segmentation preset lines 13b and is divided into device one by one
Part chip.
Use example segmenting device as shown in Figure 9 (expanding unit) 50 implements the 2nd segmentation step.Point shown in Fig. 9
Cutting device 50 has：Framework holding unit 52, it keeps to ring-shaped frame F；And with expanding element 54, it is protected to framework
The dicing tape T assembled on the ring-shaped frame F that unit 52 is kept is held to be extended.
Framework holding unit 52 by ring-type frame retention feature 56 and be disposed on the periphery of frame retention feature 56
Constituted as multiple fixtures 58 of fixed cell.The upper surface of frame retention feature 56 is formed with to be loaded to ring-shaped frame F
Mounting surface 56a, be placed with ring-shaped frame F on mounting surface 56a.
Also, placed ring-shaped frame F is fixed on framework holding unit 52 by fixture 58 on mounting surface 56a.Such structure
Into framework holding unit 52 supported by band expanding element 54 can to move in the vertical direction.
There is the extension drum 60 of the inner side for the frame retention feature 56 for being disposed in ring-type with expanding element 54.Extend drum 60
Covered 62 closing in upper end.The extension drum 60 has the internal diameter than ring-shaped frame F small and scribing than being assembled on ring-shaped frame F
The big internal diameter of external diameter with the chip 11 pasted on T.
Extension drum 60 has the support lug 64 being integrally formed in its lower end.Also having with expanding element 54 makes ring-type
The driver element 66 that frame retention feature 56 is moved in the vertical direction.What the driver element 66 was arranged in support lug 64
Multiple cylinders 68 are constituted, and the lower surface of its piston rod 70 and frame retention feature 56 links.
The driver element 66 being made up of multiple cylinders 68 makes the frame retention feature 56 of ring-type in reference position and extension bits
Moved in the vertical direction between putting, the reference position be frame retention feature 56 mounting surface 56a with as extend drum 60
The front of the lid 62 of upper end turns into the position of substantially sustained height, and the expanding location is more defined on the lower than the upper end for extending drum 60
Amount.
Segmenting device 50 that 10 pairs of uses of reference picture are constituted as described above and the 2nd segmentation step of chip 11 implemented is entered
Row explanation.As shown in Figure 10 (A), the ring-shaped frame F that chip 11 is carry across dicing tape T is positioned in frame retention feature
On 56 mounting surface 56a, and frame retention feature 56 is fixed on by fixture 58.Now, frame retention feature 56 is positioned
It is the reference position of substantially sustained height in its mounting surface 56a and extension drum 60 upper end.
Then, cylinder 68 is driven and frame retention feature 56 is dropped to the expanding location shown in Figure 10 (B).
Thus, the ring-shaped frame F fixed on the mounting surface 56a by making frame retention feature 56 declines, therefore is assemblied in ring-type frame
Frame F dicing tape T is abutted with the upper edge of extension drum 60 and mainly extended in the radial direction.
Its result, which is that pulling force is radial, acts on the chip 11 pasted on dicing tape T.When such pulling force is radial
When acting on chip 11, the 2nd direction modification layer 19 along the 2nd segmentation preset lines 13b formation turns into break origins, the edge of chip 11
The 2nd segmentation preset lines 13b fractures, are divided into device chip 21 one by one.
In the above-described embodiment, semiconductor die is illustrated as the chip of the processing object of the processing method of the present invention
Piece 11, but the chip not limited to this of the processing object as the present invention, for regarding sapphire as optical device wafer of substrate etc.
Other chips, also can be similarly using the processing method of the present invention.
Claims (1)
1. in a kind of processing method of chip, the chip, a plurality of 1st segmentation preset lines by being formed along the 1st direction and along with
Device is formed with each region that a plurality of 2nd segmentation preset lines that the 2nd direction that 1st direction intersects is formed are marked off, and
And the 1st segmentation preset lines and the 2nd segmentation preset lines at least the 2nd segmentation preset lines formed in discontinuous manner,
The chip is divided into device chip one by one by the processing method of the chip, it is characterised in that
The processing method of the chip has the steps：
1st direction modifies layer forming step, along the 1st segmentation preset lines, by swashing for the wavelength for chip with permeability
Light beam converges to the inside of chip from the rear side of chip and is irradiated, pre- along the 1st segmentation in being internally formed for chip
The 1st direction modification layer of the multilayer of alignment；
1st segmentation step, after the 1st direction modification layer forming step is implemented, applies external force, with the 1st side to chip
Chip is divided the wafer into multiple strips along the 1st segmentation predetermined thread breakage for break origins to modification layer to split
Piece, and the interval of adjacent strip cutting plate is expanded；
2nd direction modifies layer forming step, after the 1st segmentation step is implemented, will be right along the 2nd segmentation preset lines
The laser beam in chip with the wavelength of permeability converges to the inside of chip from the rear side of chip and is irradiated, in chip
Be internally formed along the 2nd segmentation preset lines multilayer the 2nd direction modify layer；And
2nd segmentation step, after the 2nd direction modification layer forming step is implemented, splits to being divided into multiple strips
The chip of piece applies external force, using the 2nd direction modification layer be break origins by chip along the 2nd split predetermined thread breakage incite somebody to action
Chip is divided into device chip one by one.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015-217354 | 2015-11-05 | ||
| JP2015217354A JP2017092129A (en) | 2015-11-05 | 2015-11-05 | Processing method of wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107068616A true CN107068616A (en) | 2017-08-18 |
Family
ID=58739855
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610943409.6A Pending CN107068616A (en) | 2015-11-05 | 2016-11-01 | The processing method of chip |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP2017092129A (en) |
| KR (1) | KR20170053114A (en) |
| CN (1) | CN107068616A (en) |
| TW (1) | TWI697946B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110625834A (en) * | 2019-11-01 | 2019-12-31 | 常州时创能源科技有限公司 | Method for cutting crystalline silicon edge leather |
| CN110732790A (en) * | 2019-10-28 | 2020-01-31 | 东莞记忆存储科技有限公司 | processing method for cutting package substrate |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6890890B2 (en) * | 2017-07-04 | 2021-06-18 | 株式会社ディスコ | Wafer processing method |
| JP7118522B2 (en) * | 2017-09-19 | 2022-08-16 | 株式会社ディスコ | Wafer processing method |
| JP7007052B2 (en) * | 2017-09-19 | 2022-01-24 | 株式会社ディスコ | Wafer processing method |
| JP7082502B2 (en) * | 2018-03-06 | 2022-06-08 | 株式会社ディスコ | Wafer processing method |
| JP7208062B2 (en) * | 2019-03-01 | 2023-01-18 | 株式会社ディスコ | Device chip forming method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007194515A (en) * | 2006-01-23 | 2007-08-02 | Disco Abrasive Syst Ltd | Dividing method for wafer |
| TW201210732A (en) * | 2010-07-21 | 2012-03-16 | Hamamatsu Photonics Kk | Laser processing method |
-
2015
- 2015-11-05 JP JP2015217354A patent/JP2017092129A/en active Pending
-
2016
- 2016-10-06 TW TW105132383A patent/TWI697946B/en active
- 2016-10-28 KR KR1020160141851A patent/KR20170053114A/en not_active Application Discontinuation
- 2016-11-01 CN CN201610943409.6A patent/CN107068616A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007194515A (en) * | 2006-01-23 | 2007-08-02 | Disco Abrasive Syst Ltd | Dividing method for wafer |
| TW201210732A (en) * | 2010-07-21 | 2012-03-16 | Hamamatsu Photonics Kk | Laser processing method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110732790A (en) * | 2019-10-28 | 2020-01-31 | 东莞记忆存储科技有限公司 | processing method for cutting package substrate |
| CN110625834A (en) * | 2019-11-01 | 2019-12-31 | 常州时创能源科技有限公司 | Method for cutting crystalline silicon edge leather |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20170053114A (en) | 2017-05-15 |
| TWI697946B (en) | 2020-07-01 |
| JP2017092129A (en) | 2017-05-25 |
| TW201729269A (en) | 2017-08-16 |
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