CN107026159B - Power amplifying circuit - Google Patents
Power amplifying circuit Download PDFInfo
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- CN107026159B CN107026159B CN201611138294.XA CN201611138294A CN107026159B CN 107026159 B CN107026159 B CN 107026159B CN 201611138294 A CN201611138294 A CN 201611138294A CN 107026159 B CN107026159 B CN 107026159B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
Abstract
The present invention provides a power amplification circuit, comprising: a 1 st amplifying transistor for amplifying the 1 st signal and outputting a 2 nd signal; and a bias circuit for supplying a bias voltage or a bias current to the 1 st amplifying transistor, wherein the 1 st amplifying transistor includes a plurality of unit transistors formed in a rectangular region, and the bias circuit includes: a 1 st bias transistor for supplying a 1 st bias voltage or a 1 st bias current to a base of a 1 st group of unit transistors among the plurality of unit transistors; a 2 nd bias transistor for supplying a 2 nd bias voltage or a 2 nd bias current to a base of a 2 nd group unit transistor among the plurality of unit transistors; a 1 st voltage supply circuit for supplying a 1 st voltage, which decreases with an increase in temperature, to a base of the 1 st bias transistor; and a 2 nd voltage supply circuit for supplying a 2 nd voltage, which decreases with an increase in temperature, to the base of the 2 nd bias transistor, wherein the 2 nd voltage supply circuit is formed inside the rectangular region.
Description
Technical Field
The present invention relates to a power amplifier circuit.
Background
In a mobile communication device such as a mobile phone, a power amplifier circuit is used to amplify power of a Radio Frequency (RF) signal transmitted to a base station. In a power amplifier circuit, a Bipolar Transistor such as a Heterojunction Bipolar Transistor (HBT) is used as an amplifier element.
It is known that in a bipolar transistor, when a base-emitter voltage is constantly driven, a collector current increases as temperature rises. When the power consumption increases due to an increase in the collector current, the temperature of the element increases, and thus positive feedback (thermal runaway) may occur in which the collector current further increases. Therefore, when a bipolar transistor is used in a power amplifier circuit, it is necessary to suppress thermal runaway of the bipolar transistor. For example, patent document 1 discloses a configuration in which a heat conductive wiring using a metal having good heat conductivity is used to transmit a temperature change of a bipolar transistor to a temperature control element, and a bias voltage supplied to the bipolar transistor is controlled to suppress thermal runaway.
Patent document 1: japanese patent laid-open No. 2006-147665
In the configuration disclosed in patent document 1, in order to increase the time of transmission to the temperature control element, the heat conduction wiring is used to suppress thermal runaway, but the countermeasure of this configuration leads to an increase in cost. In some power amplifier circuits, a bipolar transistor including a plurality of unit transistors (also referred to as "fingers") is used. In such a bipolar transistor, the temperature distribution in the element may be uneven. Specifically, the temperature near the center of the element is higher and the temperature near the outer edge of the element is lower. Therefore, a difference occurs between the operating characteristics of the unit transistors formed near the center of the element and the operating characteristics of the unit transistors formed near the outer edge of the element, and the distortion characteristics of the bipolar transistor deteriorate. Patent document 1 does not disclose a method for uniformizing the temperature distribution in the element in the bipolar transistor including a plurality of unit transistors.
Disclosure of Invention
The present invention has been made in view of the above circumstances, and an object thereof is to improve uniformity of temperature distribution in a bipolar transistor in a power amplification circuit including the bipolar transistor including a plurality of unit transistors.
A power amplifier circuit according to one aspect of the present invention includes: a 1 st amplifying transistor for amplifying the 1 st signal and outputting a 2 nd signal; and a bias circuit for supplying a bias voltage or a bias current to the 1 st amplifying transistor, wherein the 1 st amplifying transistor includes a plurality of unit transistors formed in a rectangular region, and the bias circuit includes: a 1 st bias transistor for supplying a 1 st bias voltage or a 1 st bias current to a base of a 1 st group of unit transistors among the plurality of unit transistors; a 2 nd bias transistor for supplying a 2 nd bias voltage or a 2 nd bias current to a base of a 2 nd group unit transistor among the plurality of unit transistors; a 1 st voltage supply circuit for supplying a 1 st voltage, which decreases with an increase in temperature, to a base of the 1 st bias transistor; and a 2 nd voltage supply circuit for supplying a 2 nd voltage, which decreases with an increase in temperature, to the base of the 2 nd bias transistor, wherein the 2 nd voltage supply circuit is formed inside the rectangular region.
According to the present invention, in a power amplification circuit including a bipolar transistor including a plurality of unit transistors, uniformity of temperature distribution in the bipolar transistor can be improved.
Drawings
Fig. 1 is a diagram showing a configuration of a power amplifier circuit 100 according to an embodiment of the present invention.
Fig. 2 is a diagram showing an example of the configuration of the power amplifiers 120A and 120B and the bias circuits 140A and 140B.
Fig. 3A is a diagram showing an example of the layout of the power amplifier circuit 100.
Fig. 3B is a diagram showing another example of the layout of the power amplifier circuit 100.
Fig. 3C is a diagram showing another example of the layout of the power amplifier circuit 100.
Fig. 4 is a diagram showing an example of a detailed layout of the power amplifiers 120A and 120B and the bias circuits 140A and 140B.
Fig. 5 is a view showing an example of a cross section (cross section of a unit transistor) along the line a-a' shown in fig. 4.
Fig. 6 is a view showing an example of a cross section along line B-B' shown in fig. 4.
Fig. 7 is a graph showing the temperature of each unit transistor.
Fig. 8 is a diagram showing the thermal resistance of each unit transistor.
Fig. 9 is a diagram showing another example of a simulation result of a temperature distribution in the power amplifier circuit 100.
Fig. 10 is a diagram showing another example of a simulation result of a temperature distribution in the power amplifier circuit 100.
Fig. 11 is a diagram showing an example of simulation results in the case where the position of the voltage supply circuit 221A ( diodes 230A, 231A) is changed in the arrangement (2-column arrangement, 1-column arrangement, and 4-column arrangement) shown in fig. 7, 9, and 10.
Fig. 12 is a diagram showing an example of simulation results in the case where the distance (pitch) between unit transistors is changed in the arrangement (1-column arrangement) shown in fig. 9.
Description of the reference numerals
100 … power amplifier circuit; 110. 120A, 120B … power amplifiers; 130. 140A, 140B … bias circuits; 150. 160 … matching circuit; 170. 180 … inductors; 200. 220A, 220B … bipolar transistors; 210a … group 1 unit transistors; 210B … group 2 unit transistors; 211A, 211B, 223A, 223B … resistor; 212A, 212B, 222A, 222B … capacitor; 221A, 221B … voltage supply circuit; 230A, 230B, 231A, 231B … diodes; 310. 311, 312, 313 … terminals; 400 … RF input wiring; 410. 420, 610 … wiring; 430 … collector wiring; 440. 550 … emitter wiring; 450 … through holes; 500 … subcollector; 510 … a collector electrode; 511 … collector electrode; 520, 520 … base; 521 … base electrode; 530 an emitter electrode 530 …; 531 … emitter electrode; 540 … a substrate; 600 … insulating resin film.
Detailed Description
Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a diagram showing a configuration of a power amplifier circuit 100 according to an embodiment of the present invention. The power amplifier circuit 100 is an integrated circuit for amplifying the power of an RF signal transmitted to a base station in a mobile communication device such as a mobile phone, for example.
As shown in fig. 1, the power amplifier circuit 100 includes power amplifiers 110, 120A, and 120B; bias circuits 130, 140A, 140B; matching circuits (MN: Matching Network)150, 160; and inductors 170, 180.
The power amplifiers 110, 120A, and 120B constitute a two-stage amplification circuit. The power amplifier 110 is supplied with a power supply voltage Vcc via an inductor 170. The power amplifiers 120A and 120B are supplied with a power supply voltage Vcc via an inductor 180. The power amplifier 110 amplifies the RF signal RFin1 (signal No. 3) and outputs an amplified signal RFout1 (signal No. 1). The power amplifiers 120A, 120B amplify the RF signal RFin2(RFout1) (1 st signal) and output an amplified signal RFout2 (2 nd signal). The power amplifiers 120A, 120B are connected in parallel. Power amplifier 120A is turned on in either a low power consumption mode (LPM) (1 st power mode) operating at a relatively low power level or a High Power Mode (HPM) (2 nd power mode) operating at a relatively high power level. On the other hand, the power amplifier 120B is turned off in the case of the low power consumption mode and turned on in the case of the high power mode. Therefore, in the power amplifier circuit 100, amplification is performed by the power amplifiers 110 and 120A in the low power consumption mode, and amplification is performed by the power amplifiers 110, 120A and 120B in the high power mode. The power amplifiers 120A and 120B are configured using bipolar transistors (e.g., HBTs) each including a plurality of unit transistors (also referred to as "fingers"). The bipolar transistor includes, for example, 16 unit transistors, the power amplifier 120A is configured by 4 unit transistors, and the power amplifier 120B is configured by 12 unit transistors. The number of unit transistors shown here is an example, and is not limited to this.
The bias circuits 130, 140A, and 140B are circuits for supplying bias voltages or bias currents to the power amplifiers 110, 120A, and 120B, respectively. The battery voltage Vbat is supplied to the bias circuits 130, 140A, 140B. The bias circuit 130 supplies a bias voltage or a bias current to the power amplifier 110 based on the bias control voltage Vbias 1. Similarly, the bias circuits 140A and 140B supply bias voltages or bias currents to the power amplifiers 120A and 120B based on the bias control voltages Vbias2 and Vbias3, respectively. In the case of the low power consumption mode, the bias circuit 140B does not supply a bias voltage or a bias current to the power amplifier 120B, so that the power amplifier 120B is turned off. Further, the configuration for turning off the power amplifier 120B is not limited thereto. For example, the power amplifier 120B may be turned off by stopping the supply of the power supply voltage or the ground voltage to the power amplifier 120B.
The matching circuits 150 and 160 are provided for matching impedances between circuits. The matching circuits 150 and 160 are configured using, for example, an inductor or a capacitor.
Fig. 2 is a diagram showing the configuration of the power amplifiers 120A and 120B and the bias circuits 140A and 140B.
The power amplifiers 120A and 120B are configured using a bipolar transistor 200 (1 st amplification transistor) configured by a plurality of unit transistors. The power amplifier 120A includes a 1 st group (e.g., 4) of the plurality of unit transistors, a resistor 211A, and a capacitor 212A. Similarly, the power amplifier 120B includes a unit transistor 210B of the 2 nd group (for example, 12) among the plurality of unit transistors, a resistor 211B, and a capacitor 212B.
The group 1 unit transistor 210A has a collector to which a power supply voltage Vcc is supplied via an inductor 180, a base to which an RF signal RFin2 is supplied via a capacitor 212A, and an emitter grounded. In addition, a bias voltage or a bias current is supplied to the base of the 1 st group unit transistor 210A via the resistor 211A. The group 2 unit transistor 210B has a collector to which a power supply voltage Vcc is supplied via an inductor 180, a base to which an RF signal RFin2 is supplied via a capacitor 212B, and an emitter grounded. In addition, a bias voltage or a bias current is supplied to the base of the group 2 unit transistor 210B via the resistor 211B. Thus, the amplified signal RFout2 is output from the collector of the bipolar transistor 200.
The bias circuit 140A includes a bipolar transistor 220A (e.g., HBT), a voltage supply circuit 221A, a capacitor 222A, and a resistor 223A.
The bipolar transistor 220A (1 st bias transistor) supplies a battery voltage Vbat to the collector, a voltage (1 st voltage) from the voltage supply circuit 221A to the base, and a bias voltage (1 st bias voltage) or a bias current (1 st bias current) from the emitter to the base of the 1 st group unit transistor 210A via the resistor 211A.
The voltage supply circuit 221A (1 st voltage supply circuit) controls the base voltage of the bipolar transistor 220A based on the bias control voltage Vbias 2. Specifically, the voltage supply circuit 221A includes a diode 230A (1 st diode) and a diode 231A (2 nd diode). The diodes 230A and 231A are connected in series, the anode of the diode 230A is connected to the base of the bipolar transistor 220A, and the cathode of the diode 231A is grounded. The capacitor 222A is connected in parallel with the diodes 230A, 231A. In addition, the bias control voltage Vbias2 is supplied to the anode of diode 230A via resistor 223A. As a result, a voltage (1 st voltage) corresponding to the forward voltages of the diodes 230A and 231A is generated at the anode of the diode 230A, and the voltage is supplied to the base of the bipolar transistor 220A. This voltage decreases with an increase in temperature due to the characteristics of the forward voltages of the diodes 230A and 231A. The capacitor 222A is provided to stabilize the voltage supplied from the voltage supply circuit 221A. In some cases, the diodes 230A and 231A in the voltage supply circuit 221A are denoted as D1 and D2, respectively. The diodes 230A and 231A can be formed of diode-connected bipolar transistors, respectively. Here, an example in which the voltage supply circuit 221A is configured using a diode is shown, but the elements configuring the voltage supply circuit 221A are not limited thereto.
The bias circuit 140B includes a bipolar transistor 220B (e.g., HBT), a voltage supply circuit 221B, a capacitor 222B, and a resistor 223B.
The bipolar transistor 220B (2 nd bias transistor) supplies a battery voltage Vbat to the collector, a voltage (2 nd voltage) from the voltage supply circuit 221B to the base, and a bias voltage (2 nd bias voltage) or a bias current (2 nd bias current) from the emitter via the resistor 211B to the base of the 2 nd group unit transistor 210B.
The voltage supply circuit 221B (2 nd voltage supply circuit) controls the base voltage of the bipolar transistor 220B based on the bias control voltage Vbias 3. Specifically, the voltage supply circuit 221B includes a diode 230B (3 rd diode) and a diode 231B (4 th diode). Diodes 230B and 231B are connected in series, the anode of diode 230B is connected to the base of bipolar transistor 220B, and the cathode of diode 231B is grounded. The capacitor 222B is connected in parallel with the diodes 230B, 231B. In addition, the bias control voltage Vbias3 is supplied to the anode of diode 230B via resistor 223B. As a result, a voltage (2 nd voltage) corresponding to the forward voltages of diodes 230B and 231B is generated at the anode of diode 230B, and this voltage is supplied to the base of bipolar transistor 220B. This voltage decreases with an increase in temperature according to the characteristics of the forward voltages of the diodes 230B and 231B. The capacitor 222B is provided to stabilize the voltage supplied from the voltage supply circuit 221B. In some cases, the diodes 230B and 231B in the voltage supply circuit 221B are denoted as D1 and D2, respectively. The diodes 230B and 231B may be diode-connected bipolar transistors, respectively. Here, although an example in which the voltage supply circuit 221B is configured using a diode is shown, the elements configuring the voltage supply circuit 221B are not limited to this.
In fig. 2, the configurations of the power amplifiers 120A and 120B and the bias circuits 140A and 140B are described, and the power amplifier 110 and the bias circuit 130 have the same configuration. That is, the power amplifier 110 includes a bipolar transistor (second amplifier transistor) as an amplifier element, similarly to the power amplifiers 120A and 120B.
Fig. 3A is a diagram showing an example of the layout of the power amplifier circuit 100. The layout shown in fig. 3 is schematic, and does not show the entire configuration of the power amplifier circuit 100.
As shown in fig. 3A, in the power amplifier circuit 100, a voltage supply circuit 221A which is a part of the bias circuit 140A is provided outside a rectangular region in which the bipolar transistor 200 is formed. On the other hand, the voltage supply circuit 221B, which is a part of the bias circuit 140B, is provided inside the rectangular region where the bipolar transistor 200 is formed. As will be described in detail later, the power amplifier 120A is formed in a region (sub-region 1) not including the center of the rectangular region in which the bipolar transistor 200 is formed (the intersection of two diagonal lines of the rectangular region), and the power amplifier 120B is formed in a region (sub-region 2) including the center of the rectangular region in which the bipolar transistor 200 is formed. Note that the power amplifier 120A is formed in a region not including the center of the rectangular region means that a part of the bipolar transistor constituting the power amplifier 120A is not formed in the center of the rectangular region. Note that the power amplifier 120B is formed in a region including the center of the rectangular region means that a part of the bipolar transistor constituting the power amplifier 120B is formed in the center of the rectangular region.
The temperature of the bipolar transistor 200 rises with operation. The temperature rise is significant particularly in the operation in the high power mode. If the collector current of the bipolar transistor 200 increases due to the temperature rise, the temperature of the bipolar transistor 200 may further rise, which may cause thermal runaway. Therefore, in the power amplifier circuit 100, thermal runaway is suppressed by the voltage supply circuits 221A and 221B.
When the temperature of the bipolar transistor 200 rises, the temperature of the voltage supply circuit 221B rises. As the forward voltages of diodes 230B and 231B decrease, the voltage supplied to the base of bipolar transistor 220B decreases. This reduces the bias voltage or the bias current supplied to the power amplifier 120B, thereby suppressing the temperature rise of the bipolar transistor 200. The thermally induced forward voltage drop of diodes 230B, 231B is referred to as thermal coupling of the amplifier to the voltage supply circuit.
Here, neglecting the control by the voltage supply circuits 221A and 221B, the temperature distribution of the bipolar transistor 200 is high in the vicinity of the center of the element, while the temperature in the vicinity of the outer edge of the element is low. That is, in the bipolar transistor 200, the temperature of the power amplifier 120A is relatively low. Therefore, in the present embodiment, the voltage supply circuit 221B is provided inside the rectangular region where the bipolar transistor 200 is formed, while the voltage supply circuit 221A is provided outside the rectangular region where the bipolar transistor 200 is formed. With such a layout, the temperature of the voltage supply circuit 221A is lower than the temperature of the voltage supply circuit 221B. Therefore, a decrease in the bias voltage or the bias current supplied to the power amplifier 120A is suppressed as compared with the power amplifier 120B. This can suppress a decrease in temperature in the region where the power amplifier 120A is formed, and improve the uniformity of the temperature distribution of the bipolar transistor 200 as a whole.
In particular, it is preferable that the voltage supply circuit 221A is formed adjacent to a rectangular region in which the bipolar transistor 200 is formed. For example, in the layout shown in fig. 3A, the voltage supply circuit 221A is formed between the outer edge of the rectangular region where the bipolar transistor 200 is formed and the bipolar transistor 220A of the bias circuit 140A. Although the temperature of the region adjacent to the rectangular region where the bipolar transistor 200 is formed is lower than that of the rectangular region where the bipolar transistor 200 is formed, the temperature of the bipolar transistor 200 increases as the temperature increases. This increases the temperature of the voltage supply circuit 221A, reduces the bias voltage or bias current supplied to the power amplifier 120A, and suppresses thermal runaway.
The voltage supply circuit 221A is not limited to the region shown in fig. 3A, and may be formed in any region adjacent to a rectangular region in which the bipolar transistor 200 is formed. For example, as shown in fig. 3B, the voltage supply circuit 221A may be formed in a region 300 between the outer edge of the rectangular region in which the bipolar transistor 200 is formed and another element such as the power amplifier 110. For example, as shown in fig. 3C, the voltage supply circuit 221A may be formed in a region 320 between the outer edge of the rectangular region in which the bipolar transistor 200 is formed and the wire bonding terminals 310 to 313. The voltage supply circuit 221A may be formed in a region different from a region adjacent to a rectangular region in which the bipolar transistor 200 is formed. For example, another element may be formed between a rectangular region where the bipolar transistor 200 is formed and a region where the voltage supply circuit 221 is formed.
Fig. 4 is a diagram showing an example of a detailed layout of the power amplifiers 120A and 120B and the bias circuits 140A and 140B.
Fig. 4 shows 16 unit transistors (fingers) F1 to F16 constituting the bipolar transistor 200. The 16 unit transistors are arranged in2 rows (F1 to F8 and F9 to F16). The power amplifier 120A includes 4 unit transistors F1, F2, F9, F10. The power amplifier 120B includes 12 unit transistors F3 to F8, and F11 to F16. The unit transistors F1, F2, F9, and F10 are formed in a region (sub-region 1) that does not include the center of the rectangular region in which the bipolar transistor 200 is formed. The unit transistors F3 to F8 and F11 to F16 are formed in a region (sub-region 2) including the center of the rectangular region in which the bipolar transistor 200 is formed.
An RF signal RFin2 is supplied to the base of each unit transistor via an RF input wiring 400. A bias voltage or a bias current is supplied from bipolar transistor 220A to the bases of unit transistors F1, F2, F9, and F10 of power amplifier 120A via wiring 410. A bias voltage or a bias current is supplied from bipolar transistor 220B via wiring 420 to the bases of unit transistors F3 to F8 and F11 to F16 of power amplifier 120B. The collector of each unit transistor is connected to a collector wiring 430. The emitter of each unit transistor is connected to emitter wiring 440 and grounded via 450. The number of unit transistors and the number of columns shown here are examples, and are not limited to these.
As described above, the voltage supply circuit 221A (the diodes 230A, 231A) is formed outside the rectangular region in which the bipolar transistor 200 is formed. More specifically, the voltage supply circuit 221A (the diodes 230A, 231A) is formed at a distance d from the outer edge of the rectangular region in which the bipolar transistor 200 is formed. On the other hand, the voltage supply circuit 221B ( diodes 230B, 231B) is formed inside the rectangular region where the bipolar transistor 200 is formed. With such a layout, as described above, the uniformity of the temperature distribution of the bipolar transistor 200 can be improved.
As shown in fig. 4, the unit transistors F1 to F8 in the column on the side where the voltage supply circuit 221A is not formed can be arranged symmetrically with the unit transistors F9 to F16 in the column on the side where the voltage supply circuit 221A is formed. Thus, the unit transistors F1 to F16 as heat sources are arranged substantially in point symmetry with respect to the center of the rectangular region in which the bipolar transistor 200 is formed, and the uniformity of the temperature distribution of the bipolar transistor 200 can be improved. The same applies to the 2-column or higher configuration.
In addition, other elements may be formed in a vacant region in the rectangular region in which the bipolar transistor 200 is formed. For example, a protective element may be formed in a region between the unit transistors F4 and F5. In this manner, by forming another element in the vacant region in the rectangular region in which the bipolar transistor 200 is formed, the chip size of the power amplifier circuit 100 can be reduced.
Fig. 5 is a view showing an example of a cross section (cross section of a unit transistor) along the line a-a' shown in fig. 4. The unit transistor includes a subcollector 500, a collector 510, a collector electrode 511, a base 520, a base electrode 521, an emitter 530, and an emitter electrode 531.
The subcollector 500 is formed on, for example, a gallium arsenide (GaAs) substrate 540. Collector electrode 510 and collector electrode 511 are formed on subcollector 500. A base 520 is formed on the collector 510. A base electrode 521 is formed over the base 520. Collector wiring 550 and collector wiring 430 shown in fig. 4 are stacked on collector electrode 511. An emitter electrode 531 is formed on the emitter electrode 530. Emitter wiring 440 shown in fig. 4 is laminated on emitter electrode 531.
Fig. 6 is a view showing an example of a cross section along line B-B' shown in fig. 4. The emitter wiring 440 is formed on the surface of the substrate 540. An insulating resin film 600 is formed on the emitter wiring 440. The collector wiring 430 is formed on the insulating resin film 600. The via 450 is formed to reach the emitter wiring 440 from the inside of the substrate 540. Further, a wiring 610 connected to ground is formed in the via 450.
Fig. 7 and 8 are diagrams showing an example of a simulation result of a temperature distribution in the power amplifier circuit 100.
Fig. 7 is a graph showing the temperature of each unit transistor. As shown in fig. 7, 16 unit transistors (F1 to F16) are arranged in2 rows (F1 to F8 and F9 to F16). The unit transistors F1, F2, F9, and F10 are unit transistors for the power amplifier 120A. The voltage supply circuit 221A ( diodes 230A, 231A) is formed at a position 40 μm from the outer edge of the rectangular region in which the bipolar transistor 200 is formed. The voltage supply circuit 221B ( diodes 230B, 231B) is formed near the center of the rectangular region in which the bipolar transistor 200 is formed (between the unit transistors F12, F13).
Fig. 7 shows the temperature of each unit transistor when the power amplifier circuit 100 is operated in the high power mode (room temperature 25 degrees). As shown in fig. 7, the temperature of the unit transistors F1, F2, F9, F10 is the same degree as that of the unit transistors (e.g., F4, F5, F12, F13) near the center.
Fig. 8 is a diagram showing the thermal resistance of each unit transistor. The horizontal axis represents the position of the unit transistor, and the vertical axis represents the thermal resistance (. degree. C./W). In fig. 8, a graph indicated as "divided" shows a simulation result of the power amplifier circuit 100. In fig. 8, the graph indicated as "no division" is a simulation result in the case where the voltage supply circuit 221A ( diodes 230A, 231A) and the voltage supply circuit 221B ( diodes 230B, 231B) are formed in the same manner in the rectangular region in which the bipolar transistor 200 is formed (comparative example). As shown in fig. 8, it is understood that the power amplifier circuit 100 can reduce the variation in the thermal resistance of the unit transistors F1 to F16 as compared with the comparative example.
Fig. 9 is a diagram showing another example of a simulation result of a temperature distribution in the power amplifier circuit 100. Fig. 9 shows the temperature of each unit transistor when the power amplifier circuit 100 is operated in the high power mode (room temperature 25 degrees). In fig. 9, 16 unit transistors (F1 to F16) are arranged in1 column. The unit transistors F1, F2, F15, and F16 are unit transistors for the power amplifier 120A. The voltage supply circuit 221A ( diodes 230A, 231A) is formed at a position 150 μm from the outer edge of the rectangular region in which the bipolar transistor 200 is formed. The voltage supply circuit 221B ( diodes 230B, 231B) is formed near the center of the rectangular region in which the bipolar transistor 200 is formed (between the unit transistors F8, F9). In this example, the temperature of the unit transistors F1, F2, F15, and F16 is also the same as the temperature of the unit transistors (e.g., F8 and F9) near the center.
Fig. 10 is a diagram showing another example of a simulation result of a temperature distribution in the power amplifier circuit 100. Fig. 10 shows the temperature of each unit transistor when the power amplifier circuit 100 is operated in the high power mode (room temperature 25 degrees). In fig. 10, 16 unit transistors (F1 to F16) are arranged in 4 rows (F1 to F4, F5 to F8, F9 to F12, and F13 to F16). The unit transistors F1, F2, F13, and F14 are unit transistors for the power amplifier 120A. The voltage supply circuit 221A ( diodes 230A, 231A) is formed at a position 60 μm from the outer edge of the rectangular region in which the bipolar transistor 200 is formed. The voltage supply circuit 221B ( diodes 230B, 231B) is formed near the center of the rectangular region in which the bipolar transistor 200 is formed (between the unit transistors F6, F7). In this example, the temperature of the unit transistors F1, F2, F13, and F14 is also the same as the temperature of the unit transistors (e.g., F6, F7, F10, and F11) near the center.
Fig. 11 is a diagram showing an example of simulation results in the case where the position of the voltage supply circuit 221A ( diodes 230A, 231A) is changed in the arrangement (2-column arrangement, 1-column arrangement, and 4-column arrangement) shown in fig. 7, 9, and 10.
In fig. 11, the horizontal axis represents a ratio (%) of the temperature (Tave (D1, D2)) at the position where the voltage supply circuit 221A ( diodes 230A, 231A) is formed to the maximum temperature Tmax in the rectangular region where the bipolar transistor 200 is formed. In addition, the vertical axis represents a ratio (%) of a standard deviation (σ) of the thermal resistance of the unit transistor to an average (ave) of the thermal resistances of the unit transistors. In fig. 11, data having a value around 90% on the horizontal axis is a simulation result of "no division" (comparative example) as in fig. 8.
As is clear from the simulation results in fig. 11, regardless of the arrangement of the unit transistors, the variation in thermal resistance can be reduced as compared with the case of the comparative example, that is, the uniformity of the temperature distribution can be improved. In particular, it is found that favorable results can be obtained in the range where the horizontal axis has a value of 60% to 75%.
Fig. 12 is a diagram showing an example of simulation results in the case where the distance (pitch) between unit transistors is changed in the arrangement (1-column arrangement) shown in fig. 9. The horizontal axis and the vertical axis are the same as those in fig. 11. The results of the simulation for the three cases of pitches of 30 μm, 35 μm, and 40 μm are shown in FIG. 12. It is understood that good results can be obtained in the range where the value on the abscissa is 60% to 75% at any pitch.
The above description has been made of exemplary embodiments of the present invention. In the power amplifier circuit 100, the 1 st group unit transistors 210A constituting the power amplifier 120A are formed in a region (the 1 st sub-region) not including the center of the rectangular region in which the bipolar transistor 200 is formed. In addition, the unit transistors 210B of the 2 nd group constituting the power amplifier 120B are formed in a region (the 2 nd sub-region) including the center of the rectangular region in which the bipolar transistor 200 is formed. Further, the voltage supply circuit 221A that controls the bias voltage or the bias current supplied to the power amplifier 120A is formed outside the rectangular region in which the bipolar transistor 200 is formed, and the voltage supply circuit 221B that controls the bias voltage or the bias current supplied to the power amplifier 120B is formed inside the region.
With such a layout, the temperature of the voltage supply circuit 221A is lower than the temperature of the voltage supply circuit 221B. Therefore, as compared with the power amplifier 120B, a decrease in the bias voltage or the bias current supplied to the power amplifier 120A can be suppressed. This can suppress a decrease in temperature in the region where the power amplifier 120A is formed (a region not including the center of the rectangular region where the bipolar transistor 200 is formed), and improve the uniformity of the temperature distribution of the bipolar transistor 200.
In the power amplifier circuit 100, the voltage supply circuit 221B is formed in a region (sub-region 2) including the center of the rectangular region in which the bipolar transistor 200 is formed. In the bipolar transistor 200, particularly near the center, the temperature tends to be high. Therefore, by forming the voltage supply circuit 221B in the vicinity of the center of the rectangular region in which the bipolar transistor 200 is formed, the effect of suppressing thermal runaway of the bipolar transistor 200 can be improved.
In addition, in the power amplification circuit 100, the number of unit transistors (fingers) constituting the power amplifier 120A is smaller than the number of unit transistors (fingers) constituting the power amplifier 120B. Therefore, since the number of unit transistors (fingers) that suppress a temperature decrease is relatively small, the effect of suppressing thermal runaway of the bipolar transistor 200 as a whole is easily maintained.
In the power amplifier circuit 100, the voltage supply circuit 221A is formed adjacent to the rectangular region in which the bipolar transistor 200 is formed. Although the temperature of the region adjacent to the rectangular region where the bipolar transistor 200 is formed is lower than the temperature inside the rectangular region where the bipolar transistor 200 is formed, the temperature rises as the temperature of the bipolar transistor 200 rises. This increases the temperature of the voltage supply circuit 221A, reduces the bias voltage supplied to the power amplifier 120A, and suppresses thermal runaway.
For example, as shown in fig. 3A, the voltage supply circuit 221A may be formed between the outer edge of the rectangular region where the bipolar transistor 200 is formed and the bipolar transistor 220A of the bias circuit 140A.
For example, as shown in fig. 3B, the voltage supply circuit 221A can be formed in a region 300 between the outer edge of the rectangular region in which the bipolar transistor 200 is formed and another element such as the power amplifier 110.
For example, as shown in fig. 3C, the voltage supply circuit 221A may be formed in a region 320 between the outer edge of the rectangular region in which the bipolar transistor 200 is formed and the wire bonding terminals 310 to 313.
In particular, as shown in fig. 11 and 12, by forming the voltage supply circuit 221A at a position in the rectangular region where the bipolar transistor 200 is formed, where the temperature is 60% to 75% of the highest temperature, the uniformity of the temperature distribution can be improved.
In the power amplifier circuit 100, the voltage supply circuit 221A may be configured by the diodes 230A and 231A connected in series. Similarly, the voltage supply circuit 221B may be configured by diodes 230B and 231B connected in series. Thus, for example, thermal runaway can be suppressed without using a resistor having a large resistance value.
The embodiments described above are examples for facilitating understanding of the present invention, and are not intended to limit and explain the examples of the present invention. The present invention can be modified and improved without departing from the spirit thereof, and equivalents thereof are also included in the present invention. That is, the embodiment of the present invention to which design changes are added as appropriate by those skilled in the art is also included in the scope of the present invention as long as the features of the present invention are provided. For example, the elements provided in the embodiments, and the arrangement, materials, conditions, shapes, sizes, and the like thereof are not limited to the illustrated examples and can be appropriately modified. The elements included in the embodiments can be combined as long as technically allowable, and a mode in which these elements are combined is also included in the scope of the present invention as long as the mode includes the features of the present invention.
Claims (26)
1. A power amplification circuit is provided with:
a 1 st amplifying transistor for amplifying the 1 st signal and outputting a 2 nd signal; and
a bias circuit for supplying a bias voltage or a bias current to the 1 st amplifying transistor,
the 1 st amplifying transistor includes a plurality of unit transistors formed in a rectangular region,
the bias circuit includes:
a 1 st bias transistor that supplies a 1 st bias voltage or a 1 st bias current to a base of a 1 st group of unit transistors among the plurality of unit transistors;
a 2 nd bias transistor supplying a 2 nd bias voltage or a 2 nd bias current to a base of a 2 nd group unit transistor among the plurality of unit transistors;
a 1 st voltage supply circuit that supplies a 1 st voltage, which decreases with an increase in temperature, to a base of the 1 st bias transistor; and
a 2 nd voltage supply circuit supplying a 2 nd voltage, which decreases with an increase in temperature, to a base of the 2 nd bias transistor,
the 2 nd voltage supply circuit is formed inside the rectangular region.
2. The power amplification circuit of claim 1,
the 1 st voltage supply circuit is formed outside the rectangular region.
3. The power amplification circuit of claim 1,
the 1 st group of unit transistors are formed in the 1 st sub-region not including the center of the rectangular region,
the 2 nd group unit transistors are formed in a 2 nd sub-region including a center of the rectangular region.
4. The power amplification circuit of claim 2,
the 1 st group of unit transistors are formed in the 1 st sub-region not including the center of the rectangular region,
the 2 nd group unit transistors are formed in a 2 nd sub-region including a center of the rectangular region.
5. The power amplification circuit of claim 3,
the 2 nd voltage supply circuit is formed inside the 2 nd sub-region.
6. The power amplification circuit of claim 4,
the 2 nd voltage supply circuit is formed inside the 2 nd sub-region.
7. The power amplification circuit according to any one of claims 1 to 6,
the number of the 1 st group unit transistors is smaller than the number of the 2 nd group unit transistors.
8. The power amplification circuit according to any one of claims 1 to 6,
the 1 st voltage supply circuit is formed adjacent to the rectangular region.
9. The power amplification circuit of claim 7,
the 1 st voltage supply circuit is formed adjacent to the rectangular region.
10. The power amplification circuit of claim 8,
the 1 st voltage supply circuit is formed between the outer edge of the rectangular region and the 1 st bias transistor.
11. The power amplification circuit of claim 9,
the 1 st voltage supply circuit is formed between the outer edge of the rectangular region and the 1 st bias transistor.
12. The power amplification circuit of claim 8,
further comprises a 2 nd amplifying transistor for amplifying the 3 rd signal and outputting the 1 st signal,
the 1 st voltage supply circuit is formed between an outer edge of the rectangular region and the 2 nd amplifying transistor.
13. The power amplification circuit of claim 9,
further comprises a 2 nd amplifying transistor for amplifying the 3 rd signal and outputting the 1 st signal,
the 1 st voltage supply circuit is formed between an outer edge of the rectangular region and the 2 nd amplifying transistor.
14. The power amplification circuit of claim 8,
further comprises a terminal for wire bonding,
the 1 st voltage supply circuit is formed between an outer edge of the rectangular region and the wire bonding terminal.
15. The power amplification circuit of claim 9,
further comprises a terminal for wire bonding,
the 1 st voltage supply circuit is formed between an outer edge of the rectangular region and the wire bonding terminal.
16. The power amplification circuit according to any one of claims 1 to 6,
the 1 st voltage supply circuit is formed at a position in the rectangular region where the highest temperature is 60% to 75% of the maximum temperature when the plurality of unit transistors are operated.
17. The power amplification circuit of claim 7,
the 1 st voltage supply circuit is formed at a position in the rectangular region where the highest temperature is 60% to 75% of the maximum temperature when the plurality of unit transistors are operated.
18. The power amplification circuit of claim 8,
the 1 st voltage supply circuit is formed at a position in the rectangular region where the highest temperature is 60% to 75% of the maximum temperature when the plurality of unit transistors are operated.
19. The power amplification circuit according to any one of claims 9 to 15,
the 1 st voltage supply circuit is formed at a position in the rectangular region where the highest temperature is 60% to 75% of the maximum temperature when the plurality of unit transistors are operated.
20. The power amplification circuit according to any one of claims 1 to 6,
the 1 st voltage supply circuit includes:
a 1 st diode, an anode of which is connected with the base of the 1 st bias transistor; and
a 2 nd diode, the anode of which is connected with the cathode of the 1 st diode and the cathode of which is grounded,
the 2 nd voltage supply circuit includes:
a 3 rd diode, an anode of which is connected with the base of the 2 nd bias transistor; and
and the 4 th diode has an anode connected with the cathode of the 3 rd diode and a cathode grounded.
21. The power amplification circuit of claim 7,
the 1 st voltage supply circuit includes:
a 1 st diode, an anode of which is connected with the base of the 1 st bias transistor; and
a 2 nd diode, the anode of which is connected with the cathode of the 1 st diode and the cathode of which is grounded,
the 2 nd voltage supply circuit includes:
a 3 rd diode, an anode of which is connected with the base of the 2 nd bias transistor; and
and the 4 th diode has an anode connected with the cathode of the 3 rd diode and a cathode grounded.
22. The power amplification circuit of claim 8,
the 1 st voltage supply circuit includes:
a 1 st diode, an anode of which is connected with the base of the 1 st bias transistor; and
a 2 nd diode, the anode of which is connected with the cathode of the 1 st diode and the cathode of which is grounded,
the 2 nd voltage supply circuit includes:
a 3 rd diode, an anode of which is connected with the base of the 2 nd bias transistor; and
and the 4 th diode has an anode connected with the cathode of the 3 rd diode and a cathode grounded.
23. The power amplification circuit according to any one of claims 9 to 15,
the 1 st voltage supply circuit includes:
a 1 st diode, an anode of which is connected with the base of the 1 st bias transistor; and
a 2 nd diode, the anode of which is connected with the cathode of the 1 st diode and the cathode of which is grounded,
the 2 nd voltage supply circuit includes:
a 3 rd diode, an anode of which is connected with the base of the 2 nd bias transistor; and
and the 4 th diode has an anode connected with the cathode of the 3 rd diode and a cathode grounded.
24. The power amplification circuit of claim 16,
the 1 st voltage supply circuit includes:
a 1 st diode, an anode of which is connected with the base of the 1 st bias transistor; and
a 2 nd diode, the anode of which is connected with the cathode of the 1 st diode and the cathode of which is grounded,
the 2 nd voltage supply circuit includes:
a 3 rd diode, an anode of which is connected with the base of the 2 nd bias transistor; and
and the 4 th diode has an anode connected with the cathode of the 3 rd diode and a cathode grounded.
25. The power amplification circuit of claim 17 or 18,
the 1 st voltage supply circuit includes:
a 1 st diode, an anode of which is connected with the base of the 1 st bias transistor; and
a 2 nd diode, the anode of which is connected with the cathode of the 1 st diode and the cathode of which is grounded,
the 2 nd voltage supply circuit includes:
a 3 rd diode, an anode of which is connected with the base of the 2 nd bias transistor; and
and the 4 th diode has an anode connected with the cathode of the 3 rd diode and a cathode grounded.
26. The power amplification circuit of claim 19,
the 1 st voltage supply circuit includes:
a 1 st diode, an anode of which is connected with the base of the 1 st bias transistor; and
a 2 nd diode, the anode of which is connected with the cathode of the 1 st diode and the cathode of which is grounded,
the 2 nd voltage supply circuit includes:
a 3 rd diode, an anode of which is connected with the base of the 2 nd bias transistor; and
and the 4 th diode has an anode connected with the cathode of the 3 rd diode and a cathode grounded.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| JP2015-243586 | 2015-12-14 | ||
| JP2015243586 | 2015-12-14 | ||
| JP2016-098075 | 2016-05-16 | ||
| JP2016098075A JP2017112588A (en) | 2015-12-14 | 2016-05-16 | Power amplifier circuit |
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| CN107026159A CN107026159A (en) | 2017-08-08 |
| CN107026159B true CN107026159B (en) | 2020-11-03 |
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| CN201611138294.XA Active CN107026159B (en) | 2015-12-14 | 2016-12-12 | Power amplifying circuit |
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| JP (1) | JP2017112588A (en) |
| CN (1) | CN107026159B (en) |
| TW (1) | TWI647812B (en) |
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| JP2020010005A (en) | 2018-07-12 | 2020-01-16 | 株式会社村田製作所 | Semiconductor device |
| CN110912523B (en) * | 2018-09-14 | 2023-10-27 | 株式会社村田制作所 | High-frequency power amplifier and power amplifying module |
| JP2020053927A (en) | 2018-09-28 | 2020-04-02 | 株式会社村田製作所 | Power amplifier |
| CN111106805B (en) | 2018-10-26 | 2023-06-13 | 株式会社村田制作所 | Power amplification module |
| JP6922883B2 (en) | 2018-12-28 | 2021-08-18 | 株式会社村田製作所 | Power amplifier circuit |
| JP2020195034A (en) | 2019-05-27 | 2020-12-03 | 株式会社村田製作所 | Power amplifier circuit |
| TWI742935B (en) * | 2019-12-20 | 2021-10-11 | 日商村田製作所股份有限公司 | Power amplification module |
| US11863128B2 (en) * | 2020-02-05 | 2024-01-02 | Murata Manufacturing Co., Ltd. | Power amplifier circuit |
| CN111404501B (en) * | 2020-03-26 | 2023-08-29 | 芯朴科技(上海)有限公司 | Bias circuit of thermal tracking compensation power amplifier |
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| CN104410373B (en) * | 2012-06-14 | 2016-03-09 | 西凯渥资讯处理科技公司 | Comprise the power amplifier module of related system, device and method |
| JP5831511B2 (en) * | 2013-08-26 | 2015-12-09 | 株式会社村田製作所 | High frequency power amplifier |
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| CN1531192A (en) * | 2003-03-12 | 2004-09-22 | ��ʽ���綫֥ | Offset current supplying circuit and amplifying circuit |
| JP2007195100A (en) * | 2006-01-23 | 2007-08-02 | Renesas Technology Corp | High frequency amplifier circuit, and transmitter, receiver, and transmitter/receiver using same |
| CN101043202A (en) * | 2006-03-22 | 2007-09-26 | 松下电器产业株式会社 | High-frequency power amplifier |
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| TWI647812B (en) | 2019-01-11 |
| JP2017112588A (en) | 2017-06-22 |
| TW201729398A (en) | 2017-08-16 |
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