CN107026159A - Power amplification circuit - Google Patents
Power amplification circuit Download PDFInfo
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- CN107026159A CN107026159A CN201611138294.XA CN201611138294A CN107026159A CN 107026159 A CN107026159 A CN 107026159A CN 201611138294 A CN201611138294 A CN 201611138294A CN 107026159 A CN107026159 A CN 107026159A
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- 230000003321 amplification Effects 0.000 title claims abstract description 52
- 238000003199 nucleic acid amplification method Methods 0.000 title claims abstract description 52
- 230000000630 rising effect Effects 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 11
- 239000000470 constituent Substances 0.000 description 9
- 230000009467 reduction Effects 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
The present invention provides a kind of power amplification circuit, possesses：1st amplifying transistor, the 1st signal is amplified and the 2nd signal is exported；And biasing circuit, bias voltage or bias current are supplied to the 1st amplifying transistor, the 1st amplifying transistor includes the multiple unit transistors for being formed at rectangular area, and biasing circuit is included：1st biasing transistor, the base stage to the 1st group of unit transistor in multiple unit transistors supplies the 1st bias voltage or the 1st bias current；2nd biasing transistor, the base stage to the 2nd group of unit transistor in multiple unit transistors supplies the 2nd bias voltage or the 2nd bias current；1st voltage supply circuit, the 1st voltage reduced with the rising of temperature is supplied to the base stage of the 1st biasing transistor；And the 2nd voltage supply circuit, the 2nd voltage reduced with the rising of temperature is supplied to the base stage of the 2nd biasing transistor, the 2nd voltage supply circuit is formed at the inside of rectangular area.
Description
Technical field
The present invention relates to power amplification circuit.
Background technology
In the mobile communication equipments such as mobile phone, in order to amplify the wireless frequency (RF sent to base station：Radio
Frequency) power of signal and use power amplification circuit.In power amplification circuit, as amplifier element, using heterogeneous
Tie bipolar transistor (HBT：Heterojunction Bipolar Transistor) etc. bipolar transistor.
If known consistently drive emitter-to-base voltage in bipolar transistor, as temperature rises, current collection
Electrode current increase.If consuming power increase because of the increase of collector current, the temperature of element rises, and thus there may be collection
The further increased positive feedback (thermal runaway) of electrode current.Therefore, the feelings of bipolar transistor are used in power amplification circuit
, it is necessary to suppress the thermal runaway of bipolar transistor under condition.For example, Patent Document 1 discloses one kind in order to by ambipolar crystalline substance
The temperature change of body pipe passes to temperature control component and using make use of the heat conduction of the good metal of heat conduction to connect up, and by right
The bias voltage for being supplied to bipolar transistor is controlled to suppress the composition of thermal runaway.
Patent document 1：Japanese Unexamined Patent Publication 2006-147665 publications
In the composition disclosed in patent document 1, in order to accelerate the time for being transferred to temperature control component, heat conduction cloth is used
Line suppresses thermal runaway, but the countermeasure of this composition causes cost to increase.In addition, in power amplification circuit, having using by multiple
Unit transistor is (also referred to as " finger piece ".) constitute bipolar transistor situation.In such bipolar transistor, deposit
The even situation of temperature distributing disproportionation in element.Specifically, the temperature of the immediate vicinity of element is higher and the outer rim of element
Neighbouring temperature is relatively low.Therefore, the immediate vicinity for being formed at element unit transistor acting characteristic and be formed at element
Outer rim near unit transistor acting characteristic on produce difference, the distorted characteristic deterioration of bipolar transistor.In patent
In document 1, it is not disclosed in the bipolar transistor being made up of like this multiple unit transistors, makes the Temperature Distribution in element
The method of homogenization.
The content of the invention
The present invention be in view of such situation and complete, its object is to possessing what is be made up of multiple unit transistors
In the power amplification circuit of bipolar transistor, the uniformity of the Temperature Distribution in bipolar transistor is improved.
The power amplification circuit of the side of the present invention possesses：1st amplifying transistor, the 1st signal is amplified and exported
2nd signal；And biasing circuit, bias voltage or bias current, the 1st amplifying transistor bag are supplied to the 1st amplifying transistor
Containing the multiple unit transistors for being formed at rectangular area, biasing circuit is included：1st biasing transistor, to multiple unit transistors
In the base stage of the 1st group of unit transistor supply the 1st bias voltage or the 1st bias current；2nd biasing transistor, to multiple
The base stage of the 2nd group of unit transistor in unit transistor supplies the 2nd bias voltage or the 2nd bias current；1st voltage is supplied
Circuit, the 1st voltage reduced with the rising of temperature is supplied to the base stage of the 1st biasing transistor；And the 2nd voltage supply
Circuit, the 2nd voltage reduced with the rising of temperature is supplied to the base stage of the 2nd biasing transistor, the 2nd voltage supply circuit
It is formed at the inside of rectangular area.
In accordance with the invention it is possible in the power amplification circuit for possessing the bipolar transistor being made up of multiple unit transistors
In, improve the uniformity of the Temperature Distribution in bipolar transistor.
Brief description of the drawings
Fig. 1 is the figure of the composition for the power amplification circuit 100 for being denoted as an embodiment of the invention.
Fig. 2 is the figure for the configuration example for representing power amplifier 120A, 120B and biasing circuit 140A, 140B.
Fig. 3 A are the figures of an example of the layout for representing power amplification circuit 100.
Fig. 3 B are the figures of another example of the layout for representing power amplification circuit 100.
Fig. 3 C are the figures of another example of the layout for representing power amplification circuit 100.
Fig. 4 is an example of the detailed placement for representing power amplifier 120A, 120B and biasing circuit 140A, 140B
Figure.
Fig. 5 is the figure of an example of the section (section of unit transistor) for representing the A-A ' lines shown in Fig. 4.
Fig. 6 is the figure of an example of the section for representing the B-B ' lines shown in Fig. 4.
Fig. 7 is the figure for the temperature for representing constituent parts transistor.
Fig. 8 is the figure for the thermal resistance for representing constituent parts transistor.
Fig. 9 is the figure of another example of the analog result for representing the Temperature Distribution in power amplification circuit 100.
Figure 10 is the figure of another example of the analog result for representing the Temperature Distribution in power amplification circuit 100.
Figure 11 is represented in the arrangement (2 row configurations, 1 row configuration and 4 row configurations) shown in Fig. 7, Fig. 9 and Figure 10,
Change an example of analog result in the case of voltage supply circuit 221A (diode 230A, 231A) position
Figure.
Figure 12 is represented in the arrangement (1 row configuration) shown in Fig. 9, changes distance (spacing) between unit transistor
In the case of analog result an example figure.
Description of reference numerals
100 ... power amplification circuits；110th, 120A, 120B ... power amplifier；130th, 140A, 140B ... biasing circuit；
150th, 160 ... match circuits；170th, 180 ... inductors；200th, 220A, 220B ... bipolar transistor；The 1st group of unit of 210A ...
Transistor；The 2nd group of unit transistor of 210B ...；211A, 211B, 223A, 223B ... resistor；212A、212B、222A、
222B ... capacitors；221A, 221B ... voltage supply circuit；230A, 230B, 231A, 231B ... diode；310、311、312、
313 ... terminals；400 ... RF input wirings；410th, 420,610 ... wiring；430 ... colelctor electrodes are connected up；440th, 550 ... emitter stage cloth
Line；450 ... through holes；500 ... electron collectors；510 ... colelctor electrodes；511 ... collector electrodes；520 ... base stages；521 ... base stages electricity
Pole；530 ... emitter stages；531 ... emitter electrodes；540 ... substrates；600 ... insulating resin films.
Embodiment
Hereinafter, an embodiment of the invention is illustrated referring to the drawings.Fig. 1 is be denoted as the present invention one
The figure of the composition of the power amplification circuit 100 of embodiment.Power amplification circuit 100 is, for example, in mobile communication such as mobile phones
In equipment, the integrated circuit that the power for the RF signals to being sent to base station is amplified.
As shown in figure 1, power amplification circuit 100 possesses power amplifier 110,120A, 120B；Biasing circuit 130,
140A、140B；Match circuit (MN：Matching Network)150、160；And inductor 170,180.
Power amplifier 110,120A, 120B constitute two grades of amplifying circuit.To power amplifier 110 via inductor
170 supply line voltage Vcc.In addition, to power amplifier 120A, 120B via the supply line voltage Vcc of inductor 180.Work(
Rate amplifier 110 is amplified to RF signals RFin1 (the 3rd signal) and exports amplified signal RFout1 (the 1st signal).Power is put
Big device 120A, 120B are amplified to RF signals RFin2 (RFout1) (the 1st signal) and export amplified signal RFout2 (the 2nd letters
Number).Power amplifier 120A, 120B are connected in parallel.Power amplifier 120A is with relatively low power level
The low-power consumption mode (LPM) (the 1st power mode) of action and the high-power mode acted with of a relatively high power level
(HPM) any one party of (the 2nd power mode) is switched on.On the other hand, situations of the power amplifier 120B in low-power consumption mode
Lower is to close, and is unlatching in the case of high-power mode.Therefore, in power amplification circuit 100, in low-power consumption mode situation
Under, be amplified by power amplifier 110,120A, in the case of high-power mode, by power amplifier 110,
120A, 120B are amplified.Power amplifier 120A, 120B (are also referred to as " finger piece " using possessing multiple unit transistors.)
Bipolar transistor (such as HBT) and constitute.The bipolar transistor for example possesses 16 unit transistors, power amplifier
120A is made up of 4 unit transistors, and power amplifier 120B is made up of 12 unit transistors.In addition, shown here list
The quantity of bit transistor is an example, is not limited to this.
Biasing circuit 130,140A, 140B to power amplifier 110,120A, 120B namely for supplying bias voltage
Or the circuit of bias current.To biasing circuit 130,140A, 140B supply cell voltage Vbat.Biasing circuit 130 is based on inclined
Control voltage Vbias1 is put, bias voltage or bias current are supplied to power amplifier 110.Similarly, biasing circuit 140A,
140B is based respectively on bias control voltage Vbias2, Vbias3, and bias voltage or inclined is supplied to power amplifier 120A, 120B
Put electric current.In the case of low-power consumption mode, biasing circuit 140B does not supply bias voltage or inclined to power amplifier 120B
Electric current is put, so that power amplifier 120B is closed.In addition, being not limited to this for the composition for closing power amplifier 120B.Example
Such as, or by stopping the supply to power amplifier 120B supply voltage or ground voltage, put to close power
Big device 120B.
Match circuit 150,160 in order that impedance matching between circuit and set.Match circuit 150,160 is for example using electricity
Sensor, capacitor are constituted.
Fig. 2 be represent power amplifier 120A, 120B and biasing circuit 140A, 140B composition into figure.
Power amplifier 120A, 120B use (the 1st amplification of bipolar transistor 200 being made up of multiple unit transistors
Transistor) constitute.Power amplifier 120A possess the 1st group of (such as 4) unit transistor 210A in multiple unit transistors,
Resistor 211A and capacitor 212A.Similarly, power amplifier 120B possesses the 2nd group of (example in multiple unit transistors
Such as 12) unit transistor 210B, resistor 211B and capacitor 212B.
1st group of unit transistor 210A to colelctor electrode via the supply line voltage Vcc of inductor 180, to base stage via electricity
Container 212A supplies RF signal RFin2, grounded emitter.In addition, to the 1st group of unit transistor 210A base stage via resistor
211A supplies bias voltage or bias current.2nd group of unit transistor 210B supplies power supply to colelctor electrode via inductor 180
Voltage vcc, RF signal RFin2, grounded emitter are supplied to base stage via capacitor 212B.In addition, to the 2nd group of unit transistor
210B base stage supplies bias voltage or bias current via resistor 211B.Thus, from the current collection of bipolar transistor 200
Pole output amplified signal RFout2.
Biasing circuit 140A possesses bipolar transistor 220A (such as HBT), voltage supply circuit 221A, capacitor 222A
And resistor 223A.
Bipolar transistor 220A (the 1st biasing transistor) supplies cell voltage Vbat to colelctor electrode, to base stage from voltage
Supply circuit 221A service voltages (the 1st voltage), from emitter stage via bases of the resistor 211A to the 1st group of unit transistor 210A
Pole supply bias voltage (the 1st bias voltage) or bias current (the 1st bias current).
Voltage supply circuit 221A (the 1st voltage supply circuit) is based on bias control voltage Vbias2, ambipolar to control
Transistor 220A base voltage.Specifically, voltage supply circuit 221A possesses diode 230A (the 1st diode) and two
Pole pipe 231A (the 2nd diode).Diode 230A, 231A are connected in series to, diode 230A anode with it is ambipolar
Transistor 220A base stage connection, diode 231A minus earth.Capacitor 222A in parallel with diode 230A,
231A connections.In addition, supplying bias control voltage Vbias2 via resistor 223A to diode 230A anode.Thus, exist
Diode 230A anode generates voltage (the 1st voltage) corresponding with diode 230A, 231A forward voltage, and the voltage is supplied
To the base stage to bipolar transistor 220A.The voltage is according to the characteristic of diode 230A, 231A forward voltage, with temperature
Rising and reduce.Capacitor 222A is in order that being set by the voltage stabilization that voltage supply circuit 221A is supplied.In addition,
There is the situation that diode 230A, 231A in voltage supply circuit 221A are denoted as to D1, D2 respectively.230A, 231A points of diode
The bipolar transistor that can not connected by diode is constituted.Here, show and constitute voltage supply circuit using diode
221A example, but composition voltage supply circuit 221A element is not limited to this.
Biasing circuit 140B possesses bipolar transistor 220B (such as HBT), voltage supply circuit 221B, capacitor 222B
And resistor 223B.
Bipolar transistor 220B (the 2nd biasing transistor) supplies cell voltage Vbat to colelctor electrode, to base stage from voltage
Supply circuit 221B service voltages (the 2nd voltage), from emitter stage via bases of the resistor 211B to the 2nd group of unit transistor 210B
Pole supply bias voltage (the 2nd bias voltage) or bias current (the 2nd bias current).
Voltage supply circuit 221B (the 2nd voltage supply circuit) is based on bias control voltage Vbias3, ambipolar to control
Transistor 220B base voltage.Specifically, voltage supply circuit 221B possesses diode 230B (the 3rd diode) and two
Pole pipe 231B (the 4th diode).Diode 230B, 231B are connected in series to, diode 230B anode with it is ambipolar
Transistor 220B base stage connection, diode 231B minus earth.Capacitor 222B in parallel with diode 230B,
231B connections.In addition, supplying bias control voltage Vbias3 via resistor 223B to diode 230B anode.Thus, exist
Diode 230B anode generates voltage (the 2nd voltage) corresponding with diode 230B, 231B forward voltage, and the voltage is supplied
To the base stage to bipolar transistor 220B.The voltage is according to the characteristic of diode 230B, 231B forward voltage, with temperature
Rising and reduce.Capacitor 222B is in order that being set by the voltage stabilization that voltage supply circuit 221B is supplied.In addition,
There is the situation that diode 230B, 231B in voltage supply circuit 221B are denoted as to D1, D2 respectively.230B, 231B points of diode
The bipolar transistor that can not connected by diode is constituted.Here, show and constitute voltage supply circuit using diode
221B example, but composition voltage supply circuit 221B element is not limited to this.
In fig. 2, the composition to power amplifier 120A, 120B and biasing circuit 140A, 140B is illustrated, work(
Rate amplifier 110 and biasing circuit 130 are also that identical is constituted.I.e., power amplifier 110 and power amplifier 120A,
120B is identical, possesses bipolar transistor (the 2nd amplifying transistor) as amplifier element.
Fig. 3 A are the figures of an example of the layout for representing power amplification circuit 100.In addition, the layout shown in Fig. 3 is general
Will, whole compositions of power amplification circuit 100 are not shown.
As shown in Figure 3A, in power amplification circuit 100, it is used as the voltage supply circuit of a biasing circuit 140A part
221A is arranged at the outside for the rectangular area for being formed with bipolar transistor 200.On the other hand, as the one of biasing circuit 140B
Partial voltage supply circuit 221B is arranged at the inside for the rectangular area for being formed with bipolar transistor 200.In addition, in detail
Appearance is aftermentioned, but power amplifier 120A is formed at the center (rectangle region not comprising the rectangular area for forming bipolar transistor 200
Two cornerwise intersection points in domain) region (the 1st subregion), power amplifier 120B is formed at comprising forming bipolar transistor
The region (the 2nd subregion) at the center of the rectangular area of pipe 200.In addition, so-called power amplifier 120A is formed at and not included
The region at the center of rectangular area refers to that the part for constituting power amplifier 120A bipolar transistor is not formed at rectangle
The center in region.In addition, the region that so-called power amplifier 120B is formed at the center comprising rectangular area refers to constitute work(
A part for rate amplifier 120B bipolar transistor is formed at the center of rectangular area.
With action, its temperature rises bipolar transistor 200.Temperature rises to be shown especially in the action of high-power mode
Write.If the collector current of bipolar transistor 200 increase because of temperature rising, the temperature of bipolar transistor 200 enters one
Step rises, and there is a possibility that to cause thermal runaway.Therefore, in power amplification circuit 100, by voltage supply circuit 221A,
221B suppresses thermal runaway.
If the temperature of bipolar transistor 200 rises, voltage supply circuit 221B temperature rises.It is accompanied by this, two
The forward voltage of pole pipe 230B, 231B declines, and the voltage of bipolar transistor 220B base stage supply is declined.Thus, to work(
The bias voltage of rate amplifier 120B supplies or bias current reduction, the temperature for suppressing bipolar transistor 200 rise.Will be by
Thermally-induced diode 230B, 231B forward voltage declines the thermal coupling for being referred to as amplifier and voltage supply circuit.
Here, for the Temperature Distribution of bipolar transistor 200, entered if ignoring by voltage supply circuit 221A, 221B
Capable control, then the temperature of the immediate vicinity of element is higher, on the other hand, and the temperature near the outer rim of element is relatively low.I.e., double
In bipolar transistor 200, power amplifier 120A temperature is relatively low.Therefore, in the present embodiment, voltage is supplied into electricity
Road 221B is arranged at the inside for the rectangular area for being formed with bipolar transistor 200, on the other hand by voltage supply circuit 221A
It is arranged at the outside for the rectangular area for being formed with bipolar transistor 200.By such layout, voltage supply circuit 221A's
Temperature of the temperature than voltage supply circuit 221B is low.Therefore, compared with power amplifier 120B, power amplifier 120A is supplied
The reduction of the bias voltage or bias current given is suppressed.Thereby, it is possible to suppress the region to form power amplifier 120A
Temperature reduction, and improve the uniformity of the overall Temperature Distribution of bipolar transistor 200.
Particularly preferably voltage supply circuit 221A is adjacently formed with being formed with the rectangular area of bipolar transistor 200.
For example, in the layout shown in Fig. 3 A, voltage supply circuit 221A is formed at the rectangular area for being formed with bipolar transistor 200
Outer rim and biasing circuit 140A bipolar transistor 220A between.Although the rectangle with being formed with bipolar transistor 200
The region of area adjacency is low temperature compared with being formed with the rectangular area of bipolar transistor 200, but with bipolar transistor
The temperature of pipe 200 rises, and its temperature rises.Thus, voltage supply circuit 221A temperature rises, and power amplifier 120A is supplied
Bias voltage or the bias current reduction given, and thermal runaway can be suppressed.
Voltage supply circuit 221A is not limited to the region shown in Fig. 3 A, can also be formed at and be formed with bipolar transistor
The arbitrary region of the rectangular area adjoining of pipe 200.For example, as shown in Figure 3 B, voltage supply circuit 221A can also be formed at
It is formed with the region 300 between other elements such as the outer rim of the rectangular area of bipolar transistor 200 and power amplifier 110.
In addition, for example, as shown in Figure 3 C, voltage supply circuit 221A can also be formed at the rectangle for being formed with bipolar transistor 200
Region 320 of the outer rim and wire bonding in region between terminal 310~313.In addition, voltage supply circuit 221A can also shape
Cheng Yutong is from being formed with the different region in region that the rectangular area of bipolar transistor 200 is abutted.For example, it is also possible to formed
There is the rectangular area of bipolar transistor 200 and be formed between the region of voltage supply circuit 221, form other elements.
Fig. 4 is an example of the detailed placement for representing power amplifier 120A, 120B and biasing circuit 140A, 140B
Figure.
16 unit transistor (finger piece) F1~F16 for constituting bipolar transistor 200 are shown in Fig. 4.16 lists
Bit transistor is formed in the way of being arranged in 2 row (F1~F8 and F9~F16).Power amplifier 120A includes 4 unit crystalline substances
Body pipe F1, F2, F9, F10.Power amplifier 120B includes 12 unit transistor F3~F8, F11~F16.Unit transistor
F1, F2, F9, F10 are formed at region (the 1st sub-district at the center not comprising the rectangular area for being formed with bipolar transistor 200
Domain).Unit transistor F3~F8, F11~F16 is formed at the center for including the rectangular area for being formed with bipolar transistor 200
Region (the 2nd subregion).
RF signals RFin2 are supplied via RF inputs wiring 400 to the base stage of constituent parts transistor.To power amplifier 120A
Unit transistor F1, F2, F9, F10 base stage, from bipolar transistor 220A via wiring 410 supply bias voltages or
Bias current.To power amplifier 120B unit transistor F3~F8, F11~F16 base stage, from bipolar transistor 220B
Bias voltage or bias current are supplied via wiring 420.The colelctor electrode of constituent parts transistor is connected with colelctor electrode wiring 430.
The emitter stage of constituent parts transistor is connected with emitter stage wiring 440, and is grounded via through hole 450.In addition, shown here unit
The quantity of transistor, columns are an examples, are not limited to this.
As described above, voltage supply circuit 221A (diode 230A, 231A) is formed at and is formed with bipolar transistor 200
Rectangular area outside.More specifically, voltage supply circuit 221A (diode 230A, 231A) is formed at distance and is formed with
The outer rim of the rectangular area of bipolar transistor 200 is apart from d position.On the other hand, voltage supply circuit 221B (diodes
230B, 231B) it is formed at the inside for the rectangular area for being formed with bipolar transistor 200.By such layout, as above institute
State, it is possible to increase the uniformity of the Temperature Distribution of bipolar transistor 200.
In addition, as shown in figure 4, being formed without unit transistor F1~F8 energy of the row of voltage supply circuit 221A side
Enough unit transistor F9~F16 with being formed with the row of voltage supply circuit 221A side turn into symmetrical arrangement.Thus, make
Substantially match somebody with somebody on the basis of center for rectangular areas of the unit transistor F1~F16 to be formed with bipolar transistor 200 of thermal source
It is set to point symmetry, it is possible to increase the uniformity of the Temperature Distribution of bipolar transistor 200.Also it is identical in the composition of the 2 row above.
Alternatively, it is also possible to form other elements in the clear area being formed with the rectangular area of bipolar transistor 200.
For example, it is also possible to which the region between unit transistor F4, F5 forms protection element.Like this, by be formed with it is ambipolar
Clear area in the rectangular area of transistor 200 forms other elements, can reduce the chip chi of power amplification circuit 100
It is very little.
Fig. 5 is the figure of an example of the section (section of unit transistor) for representing the A-A ' lines shown in Fig. 4.Unit is brilliant
Body pipe comprising electron collector 500, colelctor electrode 510, collector electrode 511, base stage 520, base electrode 521, emitter stage 530 and
Emitter electrode 531.
Electron collector 500 is for example formed on GaAs (GaAs) substrate 540.Colelctor electrode 510 and collector electrode 511
Formed on electron collector 500.Base stage 520 is formed on colelctor electrode 510.Base electrode 521 is formed in base stage 520.In collection
The colelctor electrode wiring 430 shown in 550 and Fig. 4 of colelctor electrode wiring is laminated with electrodes 511.Emitter electrode 531 is formed
On emitter stage 530.The emitter stage wiring 440 shown in Fig. 4 is laminated with emitter electrode 531.
Fig. 6 is the figure of an example of the section for representing the B-B ' lines shown in Fig. 4.Emitter stage wiring 440 is formed in substrate
On 540 surface.Insulating resin film 600 is formed in emitter stage wiring 440.Colelctor electrode wiring 430 is formed in insulating resin film
On 600.Through hole 450 is formed as reaching emitter stage wiring 440 from the inside of substrate 540.Moreover, being formed with and connecing in through hole 450
The wiring 610 of ground connection.
Fig. 7 and Fig. 8 are the figures of an example of the analog result for representing the Temperature Distribution in power amplification circuit 100.
Fig. 7 is the figure for the temperature for representing constituent parts transistor.As shown in fig. 7,16 unit transistor (F1~F16) arrangements
Into 2 row (F1~F8 and F9~F16).Wherein, unit transistor F1, F2, F9, F10 is power amplifier 120A unit
Transistor.Voltage supply circuit 221A (diode 230A, 231A) is formed at the rectangle that distance is formed with bipolar transistor 200
The position of 40 μm of the outer rim in region.Voltage supply circuit 221B (diode 230B, 231B), which is formed at, is formed with bipolar transistor
The immediate vicinity of the rectangular area of pipe 200 (between unit transistor F12, F13).
Shown in Fig. 7 make power amplification circuit 100 acted with high-power mode in the case of (25 degree of room temperature) each list
The temperature of bit transistor.As shown in fig. 7, unit transistor F1, F2, F9, F10 temperature and the unit transistor of immediate vicinity
The temperature of (for example, F4, F5, F12, F13) is same degree.
Fig. 8 is the figure for the thermal resistance for representing constituent parts transistor.Transverse axis represents the position of unit transistor, and the longitudinal axis represents thermal resistance
(℃/W).In addition, the chart in fig. 8, being expressed as " having segmentation " is the analog result of power amplification circuit 100.In addition, in figure
The chart in 8, being expressed as " non-division " is by voltage supply circuit 221A (diode 230A, 231A) and voltage supply circuit
221B (diode 230B, 231B) is identically formed in the situation of the inside for the rectangular area for being formed with bipolar transistor 200
Under (comparative example) analog result.As shown in Figure 8, it is known that in power amplification circuit 100, compared with comparative example, list can be reduced
The deviation of bit transistor F1~F16 thermal resistance.
Fig. 9 is the figure of another example of the analog result for representing the Temperature Distribution in power amplification circuit 100.In Fig. 9
In show make power amplification circuit 100 acted with high-power mode in the case of (25 degree of room temperature) constituent parts transistor temperature
Degree.In fig .9,16 unit transistors (F1~F16) are arranged in 1 row.Wherein, unit transistor F1, F2, F15, F16 is work(
Rate amplifier 120A unit transistor.Voltage supply circuit 221A (diode 230A, 231A) is formed at distance and is formed with
The position of 150 μm of the outer rim of the rectangular area of bipolar transistor 200.Voltage supply circuit 221B (diode 230B, 231B)
Be formed at and be formed with the immediate vicinity of the rectangular area of bipolar transistor 200 (between unit transistor F8, F9).In the example
In, the temperature of unit transistor F1, F2, F15, F16 temperature and the unit transistor (for example, F8, F9) of immediate vicinity is also
Same degree.
Figure 10 is the figure of another example of the analog result for representing the Temperature Distribution in power amplification circuit 100.Figure 10
In show make power amplification circuit 100 acted with high-power mode in the case of (25 degree of room temperature) constituent parts transistor temperature
Degree.In Fig. 10,16 unit transistors (F1~F16) be arranged in 4 row (F1~F4, F5~F8, F9~F12 and F13~
F16).Wherein, unit transistor F1, F2, F13, F14 is power amplifier 120A unit transistor.Voltage supply circuit
221A (diode 230A, 231A) be formed at distance be formed with bipolar transistor 200 rectangular area 60 μm of outer rim position
Put.Voltage supply circuit 221B (diode 230B, 231B), which is formed at, to be formed with the rectangular area of bipolar transistor 200
The heart is nearby (between unit transistor F6, F7).In this embodiment, unit transistor F1, F2, F13, F14 temperature and immediate vicinity
Unit transistor (for example, F6, F7, F10, F11) temperature also be same degree.
Figure 11 is to represent the arrangement (2 row configurations, 1 row configuration and 4 row configurations) shown in Fig. 7, Fig. 9 and Figure 10
In, change an example of the analog result in the case of voltage supply circuit 221A (diode 230A, 231A) position
Figure.
In fig. 11, transverse axis represents to be formed with the temperature of voltage supply circuit 221A (diode 230A, 231A) position
The ratio (%) of (Tave (D1, D2)) relative to the maximum temperature Tmax being formed with the rectangular area of bipolar transistor 200.
In addition, the longitudinal axis represents the standard deviation (σ) of the thermal resistance of unit transistor relative to average (ave) of the thermal resistance of unit transistor
Ratio (%).In addition, in fig. 11, the value of transverse axis for the data near 90% it is same with Fig. 8 be " non-division " (comparative example)
Analog result.
It can be seen from Figure 11 analog result, regardless of the arrangement of unit transistor, compared with the situation of comparative example all
The deviation of thermal resistance can be reduced, i.e., the uniformity of Temperature Distribution improves.Especially understand, be more than 60% 75% in the value of transverse axis
In following scope, good result can be obtained.
Figure 12 is represented in the arrangement (1 row configuration) shown in Fig. 9, changes distance (spacing) between unit transistor
In the case of analog result an example figure.Transverse axis and the longitudinal axis are identical with Figure 11.Shown in Figure 12 spacing for 30 μm,
The 35 μm and 40 μm analog results in the case of these three.Understand under any spacing, be more than 60% 75% in the value of transverse axis
In following scope, good result can be obtained.
More than, the embodiment illustrated to the present invention is illustrated.In power amplification circuit 100, power is constituted
Amplifier 120A the 1st group of unit transistor 210A is being formed with the rectangular area of bipolar transistor 200, is formed at and is not wrapped
The region (the 1st subregion) at the center containing the region.In addition, constituting power amplifier 120B the 2nd group of unit transistor 210B
It is being formed with the rectangular area of bipolar transistor 200, is being formed at the region (the 2nd subregion) at the center comprising the region.
Moreover, to supplying the voltage supply circuit 221A shapes being controlled to power amplifier 120A bias voltage or bias current
Cheng Yu is formed with the outside of the rectangular area of bipolar transistor 200, to supplying to power amplifier 120B bias voltage or
The voltage supply circuit 221B that person's bias current is controlled is formed at the inside in the region.
By such layout, voltage supply circuit 221A temperature of the temperature than voltage supply circuit 221B is low.Therefore,
Compared with power amplifier 120B, supply can be suppressed to power amplifier 120A bias voltage or the drop of bias current
It is low.(do not include thereby, it is possible to the region that suppresses to be formed power amplifier 120A and be formed with the rectangle of bipolar transistor 200
The region at the center in region) temperature reduction, and improve the uniformity of the Temperature Distribution of bipolar transistor 200.
In addition, in power amplification circuit 100, voltage supply circuit 221B, which is formed to include, is formed with bipolar transistor
The region (the 2nd subregion) at the center of 200 rectangular area.In bipolar transistor 200, especially immediate vicinity is in into
For the trend of high temperature.Therefore, the rectangular area of bipolar transistor 200 is formed with by the way that voltage supply circuit 221B is formed at
Immediate vicinity, it is possible to increase the inhibition of the thermal runaway of bipolar transistor 200.
In addition, in power amplification circuit 100, constituting the quantity of power amplifier 120A unit transistor (finger piece)
The quantity of unit transistor (finger piece) than constituting power amplifier 120B is few.Therefore, because suppressing the unit of temperature reduction
The quantity of transistor (finger piece) is relatively fewer, so being easy to the suppression of thermal runaway for maintaining bipolar transistor 200 overall
Effect.
In addition, in power amplification circuit 100, voltage supply circuit 221A and the square for being formed with bipolar transistor 200
Formed shape area adjacency.Although the region of the rectangular area adjoining with being formed with bipolar transistor 200 is bipolar with being formed with
It is low temperature to be compared inside the rectangular area of transistor npn npn 200, but is risen with the temperature of bipolar transistor 200, its temperature
Rise.Thus, voltage supply circuit 221A temperature rises, and the bias voltage that power amplifier 120A is supplied is reduced, can
Suppress thermal runaway.
For example, as shown in Figure 3A, voltage supply circuit 221A can be formed at the rectangle for being formed with bipolar transistor 200
Between the outer rim in region and biasing circuit 140A bipolar transistor 220A.
In addition, for example, as shown in Figure 3 B, voltage supply circuit 221A, which can be formed at, is formed with bipolar transistor 200
Rectangular area outer rim and other elements such as power amplifier 110 between region 300.
In addition, for example, as shown in Figure 3 C, voltage supply circuit 221A, which can be formed at, is formed with bipolar transistor 200
Rectangular area the region 320 of outer rim and wire bonding between terminal 310~313.
Particularly, as shown in figs. 11 and 12, it is formed with ambipolar crystalline substance by the way that voltage supply circuit 221A is formed at
The position of the temperature of less than more than 60% 75% as maximum temperature in the rectangular area of body pipe 200, it is possible to increase temperature
The uniformity of distribution.
In addition, in power amplification circuit 100, electricity can be constituted by diode 230A, the 231A connected in a series arrangement
Press supply circuit 221A.Similarly, voltage supply circuit can be constituted by diode 230B, the 231B being connected in series to
221B.Thus, for example, without using the larger resistor of resistance value, it becomes possible to suppress thermal runaway.
Each embodiment described above is the example for being readily appreciated that the present invention, is not for limiting and explaining this
The example of invention.The present invention can carry out changing/improving without departing from the spiritly, and the equivalent is also contained in the present invention.
I.e., those skilled in the art suitably with the addition of formed mode after design alteration to each embodiment, as long as possessing the present invention
Feature, be also contained in the scope of the present invention.For example, each key element that each embodiment possesses and its configuration, material, condition,
The example that shape, size etc. are not exemplified out is limited and can suitably changed.In addition, each embodiment is possessed
As long as each key element technically allow just combine, as long as including the spy of the present invention to the modes of these factor combinations
Levy and be also contained in the scope of the present invention.
Claims (11)
1. a kind of power amplification circuit, it is characterised in that possess：
1st amplifying transistor, the 1st signal is amplified and the 2nd signal is exported；And
Biasing circuit, bias voltage or bias current are supplied to the 1st amplifying transistor,
1st amplifying transistor includes the multiple unit transistors for being formed at rectangular area,
The biasing circuit is included：
1st biasing transistor, the base stage to the 1st group of unit transistor in the multiple unit transistor supplies the 1st biased electrical
Pressure or the 1st bias current；
2nd biasing transistor, the base stage to the 2nd group of unit transistor in the multiple unit transistor supplies the 2nd biased electrical
Pressure or the 2nd bias current；
1st voltage supply circuit, the 1st voltage reduced with the rising of temperature is supplied to the described 1st biasing transistor
Base stage；And
2nd voltage supply circuit, the 2nd voltage reduced with the rising of temperature is supplied to the described 2nd biasing transistor
Base stage,
2nd voltage supply circuit is formed at the inside of the rectangular area.
2. power amplification circuit according to claim 1, it is characterised in that
1st voltage supply circuit is formed at the outside of the rectangular area.
3. power amplification circuit according to claim 1 or 2, it is characterised in that
The 1st group of unit transistor is formed at the 1st subregion at the center not comprising the rectangular area,
The 2nd group of unit transistor is formed at the 2nd subregion at the center comprising the rectangular area.
4. power amplification circuit according to claim 3, it is characterised in that
2nd voltage supply circuit is formed at the inside of the 2nd subregion.
5. according to power amplification circuit according to any one of claims 1 to 4, it is characterised in that
The quantity of the 1st group of unit transistor is fewer than the quantity of the 2nd group of unit transistor.
6. according to power amplification circuit according to any one of claims 1 to 5, it is characterised in that
1st voltage supply circuit is adjacently formed with the rectangular area.
7. power amplification circuit according to claim 6, it is characterised in that
1st voltage supply circuit is formed between the outer rim of the rectangular area and the 1st biasing transistor.
8. power amplification circuit according to claim 6, it is characterised in that
The 2nd amplifying transistor is also equipped with, the 3rd signal is amplified and exports the 1st signal by the 2nd amplifying transistor,
1st voltage supply circuit is formed between the outer rim of the rectangular area and the 2nd amplifying transistor.
9. power amplification circuit according to claim 6, it is characterised in that
Wire bonding terminal is also equipped with,
1st voltage supply circuit is formed between the outer rim of the rectangular area and the wire bonding terminal.
10. according to power amplification circuit according to any one of claims 1 to 9, it is characterised in that
Turning into most in rectangular area when the 1st voltage supply circuit is formed at the multiple unit transistor work
The position of less than more than 60% 75% temperature of high-temperature.
11. according to power amplification circuit according to any one of claims 1 to 10, it is characterised in that
1st voltage supply circuit is included：
1st diode, anode is connected with the base stage of the described 1st biasing transistor；And
2nd diode, anode is connected with the negative electrode of the 1st diode, minus earth,
2nd voltage supply circuit is included：
3rd diode, anode is connected with the base stage of the described 2nd biasing transistor；And
4th diode, anode is connected with the negative electrode of the 3rd diode, minus earth.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
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| JP2015243586 | 2015-12-14 | ||
| JP2015-243586 | 2015-12-14 | ||
| JP2016098075A JP2017112588A (en) | 2015-12-14 | 2016-05-16 | Power amplifier circuit |
| JP2016-098075 | 2016-05-16 |
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| CN107026159A true CN107026159A (en) | 2017-08-08 |
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| JP (1) | JP2017112588A (en) |
| CN (1) | CN107026159B (en) |
| TW (1) | TWI647812B (en) |
Cited By (4)
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|---|---|---|---|---|
| CN110912523A (en) * | 2018-09-14 | 2020-03-24 | 株式会社村田制作所 | High-frequency power amplifier and power amplification module |
| CN110971199A (en) * | 2018-09-28 | 2020-04-07 | 株式会社村田制作所 | Power amplifier |
| CN111404501A (en) * | 2020-03-26 | 2020-07-10 | 芯朴科技(上海)有限公司 | Bias circuit of thermal tracking compensation power amplifier |
| CN113225030A (en) * | 2020-02-05 | 2021-08-06 | 株式会社村田制作所 | Power amplifying circuit and semiconductor device |
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| JP2020010005A (en) | 2018-07-12 | 2020-01-16 | 株式会社村田製作所 | Semiconductor device |
| CN111106805B (en) | 2018-10-26 | 2023-06-13 | 株式会社村田制作所 | Power amplification module |
| JP6922883B2 (en) | 2018-12-28 | 2021-08-18 | 株式会社村田製作所 | Power amplifier circuit |
| JP2020195034A (en) | 2019-05-27 | 2020-12-03 | 株式会社村田製作所 | Power amplifier circuit |
| TWI742935B (en) * | 2019-12-20 | 2021-10-11 | 日商村田製作所股份有限公司 | Power amplification module |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2017112588A (en) | 2017-06-22 |
| CN107026159B (en) | 2020-11-03 |
| TWI647812B (en) | 2019-01-11 |
| TW201729398A (en) | 2017-08-16 |
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