CN107026106B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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Publication number
CN107026106B
CN107026106B CN201611235722.0A CN201611235722A CN107026106B CN 107026106 B CN107026106 B CN 107026106B CN 201611235722 A CN201611235722 A CN 201611235722A CN 107026106 B CN107026106 B CN 107026106B
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China
Prior art keywords
cleaning liquid
peripheral wall
liquid supply
wall portion
liquid
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CN201611235722.0A
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Chinese (zh)
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CN107026106A (en
Inventor
池田義谦
谷口裕树
篠原和義
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture

Abstract

The invention provides a substrate processing apparatus and a substrate processing method capable of removing foreign matters attached to the upper surface of the peripheral wall part of a cup-shaped member. A substrate processing apparatus according to an embodiment includes a holding unit, a processing liquid supply unit, a cup, and a cleaning liquid supply unit. The holding portion holds the substrate. The processing liquid supply unit supplies a processing liquid to the substrate. The cup has a bottom, a cylindrical peripheral wall portion standing from the bottom, a liquid receiving portion provided above the peripheral wall portion and receiving the processing liquid scattered from the substrate, and a groove portion formed on an upper surface of the peripheral wall portion along a circumferential direction, and surrounds the holding portion. The cleaning liquid supply portion supplies a cleaning liquid to an upper surface of the peripheral wall portion.

Description

Substrate processing apparatus and substrate processing method
Technical Field
The disclosed embodiments relate to a substrate processing apparatus and a substrate processing method.
Background
Conventionally, a substrate processing apparatus has been known which performs various processes by supplying a predetermined processing liquid to a substrate such as a semiconductor wafer or a glass substrate (see, for example, patent document 1).
In the substrate processing apparatus, for example, the cup provided so as to surround the periphery of the substrate receives and discharges the processing liquid scattered from the substrate. The cup includes, for example, a peripheral wall portion standing from a bottom portion and a liquid receiving portion provided on an upper surface of the peripheral wall portion and receiving the processing liquid scattered from the substrate, and the liquid receiving portion is configured to be movable up and down with respect to the peripheral wall portion.
Documents of the prior art
Patent document
Patent document 1: japanese laid-open patent publication No. 2013-089628
Disclosure of Invention
Problems to be solved by the invention
However, in the above-mentioned prior art, it is known that: the processing liquid atmosphere of the processing liquid used and the scattered processing liquid enter, for example, a gap between the liquid receiving portion and the peripheral wall portion, and the entered processing liquid atmosphere and the like are dried to adhere foreign matter such as crystals of the processing liquid to the upper surface of the peripheral wall portion of the cup.
An object of one embodiment is to provide a substrate processing apparatus and a substrate processing method capable of removing foreign matter adhering to an upper surface of a peripheral wall portion of a cup.
Means for solving the problems
A substrate processing apparatus according to one embodiment includes a holding unit, a processing liquid supply unit, a cup, and a cleaning liquid supply unit. The holding portion holds the substrate. The processing liquid supply unit supplies a processing liquid to the substrate. The cup member has: a bottom; a cylindrical peripheral wall portion erected from the bottom portion; a liquid receiving portion provided above the peripheral wall portion and receiving the processing liquid scattered from the substrate; and a groove portion formed on an upper surface of the peripheral wall portion along a circumferential direction, the cup surrounding the holding portion. The cleaning liquid supply portion supplies a cleaning liquid to an upper surface of the peripheral wall portion.
ADVANTAGEOUS EFFECTS OF INVENTION
According to an aspect of the embodiment, foreign matter adhering to the upper surface of the peripheral wall portion of the cup can be removed.
Drawings
Fig. 1 is a diagram showing a schematic configuration of a substrate processing system according to embodiment 1.
Fig. 2 is a diagram showing a schematic configuration of a processing unit.
Fig. 3 is a schematic cross-sectional view showing a specific configuration example of the processing unit.
Fig. 4 is a schematic plan view of the 1 st peripheral wall portion.
Fig. 5 is a schematic sectional view taken along line V-V of fig. 4.
FIG. 6A is a schematic sectional view taken along line VI-VI in FIG. 4, and shows a state where the 1 st liquid-receiving part is cleaned in a state where it is lowered.
FIG. 6B is a view showing the state of cleaning in the state where the 1 st liquid-receiving part is lifted.
Fig. 7 is a flowchart showing a process sequence of the process executed by the substrate processing system according to embodiment 1.
Fig. 8 is a flowchart showing an example of a process procedure of the cleaning process of the 1 st peripheral wall portion executed in the substrate processing system.
Fig. 9 is a schematic plan view of the 1 st peripheral wall portion in the 1 st modification.
Fig. 10 is an enlarged vertical cross-sectional view of the cleaning liquid supply pipe in the vicinity of the discharge port in modification 2.
Fig. 11 is a diagram showing an example of a relationship between a distance from the discharge port to a site to be cleaned and a flow rate of the cleaning liquid.
Fig. 12A is a schematic cross-sectional view showing the 1 st peripheral wall portion in the 3 rd modification.
Fig. 12B is a schematic cross-sectional view showing the 1 st peripheral wall portion in the 4 th modification.
Fig. 13 is a schematic bottom view of the back surface of the holding portion in embodiment 2.
Fig. 14A is a schematic bottom view showing the 1 st fixing section in an enlarged manner.
Fig. 14B is a schematic bottom view showing the 1 st fixing section of the comparative example.
Fig. 15 is a sectional view taken along line XV-XV of fig. 13.
Fig. 16 is a schematic bottom view showing the 2 nd fixing part in an enlarged manner.
Fig. 17 is a cross-sectional view taken along line XVII-XVII of fig. 13.
Fig. 18 is a schematic plan view of the 1 st peripheral wall portion in embodiment 3.
Fig. 19 is a schematic enlarged plan view of fig. 18.
Fig. 20 is a sectional view taken along line XX-XX of fig. 19.
Fig. 21 is a schematic plan view of the 1 st peripheral wall portion in embodiment 4.
Fig. 22 is a schematic enlarged plan view of fig. 21.
Fig. 23 is a sectional view taken along line XXIII-XXIII of fig. 22.
Fig. 24 is a flowchart showing another example of the processing procedure of the cleaning process.
Description of the reference numerals
1. A substrate processing system; 4. a control device; 16. a processing unit; 18. a control unit; 30. a substrate holding mechanism; 31. a holding section; 40. a treatment fluid supply section; 50. a recovery cup; 50a, 1 st cup; 50b, 2 nd cup; 50c, 3 rd cup; 53. a bottom; 54a, a1 st peripheral wall portion; 55a, 1 st liquid receiving part; 56. 1, a lifting mechanism; 56a, 1 st support member; 59. a through hole; 70. a treatment fluid supply; 101. 1 st rotating cup; 102. 2 nd rotating cup.
Detailed Description
Embodiments of the substrate processing apparatus and the substrate processing method disclosed in the present application will be described below in detail with reference to the drawings. The present invention is not limited to the embodiments described below.
< 1. construction of substrate processing System >
(embodiment 1)
Fig. 1 is a diagram showing a schematic configuration of a substrate processing system according to the present embodiment. Hereinafter, in order to clarify the positional relationship, an X axis, a Y axis, and a Z axis orthogonal to each other are defined, and the positive Z axis direction is set to the vertical upward direction.
As shown in fig. 1, a substrate processing system 1 has an input-output station 2 and a processing station 3. The input-output station 2 and the processing station 3 are arranged adjacently.
The input/output station 2 includes a carrier placement unit 11 and a transport unit 12. A plurality of carriers C, which are semiconductor wafers (hereinafter referred to as wafers W) in the present embodiment, are placed on the carrier placement unit 11, and a plurality of substrates, which are in this embodiment, are accommodated in a horizontal state in the carriers C.
The transport unit 12 is provided adjacent to the carrier placement unit 11, and includes a substrate transport device 13 and a transfer unit 14. The substrate transfer device 13 includes a wafer holding mechanism for holding the wafer W. The substrate transfer device 13 is movable in the horizontal direction and the vertical direction and rotatable about the vertical axis, and transfers the wafer W between the carrier C and the transfer portion 14 using the wafer holding mechanism.
The processing station 3 is disposed adjacent to the conveying section 12. The processing station 3 has a conveying section 15 and a plurality of processing units 16. The plurality of processing units 16 are provided side by side on both sides of the conveying section 15.
The conveying unit 15 is internally provided with a substrate conveying device 17. The substrate transfer device 17 includes a wafer holding mechanism for holding the wafer W. The substrate transfer device 17 is movable in the horizontal direction and the vertical direction and rotatable about the vertical axis, and transfers the wafer W between the transfer unit 14 and the processing unit 16 by using the wafer holding mechanism.
The processing unit 16 performs a predetermined substrate process on the wafer W conveyed by the substrate conveyor 17.
The substrate processing system 1 further includes a control device 4. The control device 4 is, for example, a computer, and has a control unit 18 and a storage unit 19. The storage unit 19 stores a program for controlling various processes executed in the substrate processing system 1. The control unit 18 reads and executes the program stored in the storage unit 19 to control the operation of the substrate processing system 1.
The program may be recorded in a computer-readable storage medium, and may be installed from the storage medium in the storage unit 19 of the control device 4. As a storage medium that can be read by a computer, there are, for example, a Hard Disk (HD), a Flexible Disk (FD), an optical disk (CD), a magneto-optical disk (MO), a memory card, and the like.
In the substrate processing system 1 configured as described above, first, the substrate transport apparatus 13 of the input/output station 2 takes out the wafer W from the carrier C placed on the carrier placement unit 11, and places the taken-out wafer W on the delivery unit 14. The wafer W placed on the interface 14 is taken out from the interface 14 by the substrate transfer device 17 of the processing station 3 and is input to the processing unit 16.
After the wafers W input to the processing unit 16 are processed by the processing unit 16, the wafers W are output from the processing unit 16 by the substrate transfer device 17 and placed on the delivery unit 14. The processed wafer W placed on the transfer portion 14 is returned to the carrier C of the carrier placement portion 11 by the substrate transport apparatus 13.
Next, a schematic configuration of the processing unit 16 of the substrate processing system 1 will be described with reference to fig. 2. Fig. 2 is a diagram showing a schematic configuration of the processing unit 16.
As shown in fig. 2, the process unit 16 includes a chamber 20, a substrate holding mechanism 30, a process fluid supply unit 40, and a recovery cup 50.
The chamber 20 houses the substrate holding mechanism 30, the processing fluid supply unit 40, and the recovery cup 50. A FFU (Fan Filter Unit) 21 is provided at the top of the chamber 20. FFU21 forms a downward flow within chamber 20.
The substrate holding mechanism 30 includes a holding portion 31, a column portion 32, and a driving portion 33. The holding portion 31 holds the wafer W horizontally. The support column portion 32 is a member extending in the vertical direction, and has a base end portion rotatably supported by the driving portion 33 and a distal end portion horizontally supporting the holding portion 31. The driving unit 33 rotates the column portion 32 about the vertical axis. The substrate holding mechanism 30 rotates the column part 32 using the driving part 33, thereby rotating the holding part 31 supported by the column part 32, and thereby rotating the wafer W held by the holding part 31.
The processing fluid supply unit 40 supplies a processing fluid to the wafer W. The process fluid supply unit 40 is connected to a process fluid supply source 70.
The collection cup 50 is disposed so as to surround the holding portion 31, and collects the processing liquid scattered from the wafer W by the rotation of the holding portion 31. A drain port 51 is formed in the bottom of collection cup 50, and the processing liquid collected in collection cup 50 is discharged from drain port 51 to the outside of processing unit 16. Further, an exhaust port 52 for exhausting the gas supplied from FFU21 to the outside of processing unit 16 is formed in the bottom of collection cup 50.
< 2. concrete constitution of processing Unit
Next, the structure of the processing unit 16 will be described in more detail with reference to fig. 3. Fig. 3 is a schematic cross-sectional view showing a specific configuration example of the processing unit 16.
As shown in fig. 3, FFU21 is connected to inert gas supply 23 via valve 22. FFU21 will be supplied from inert gas supply 23To give N2An inert gas such as a gas is ejected into the chamber 20 as a downflow gas. Thus, by using the inert gas as the downflow gas, the wafer W can be prevented from being oxidized.
A holding member 311 for holding the wafer W from the side surface is provided on the upper surface of the holding portion 31 of the substrate holding mechanism 30. The wafer W is horizontally held by the holding member 311 in a state slightly separated from the upper surface of the holding portion 31.
The processing fluid supply part 40 includes a nozzle 41, an arm 42 horizontally supporting the nozzle 41, and a swing elevating mechanism 43 swinging and elevating the arm 42. The nozzle 41 is connected to one end of a pipe, not shown, and the other end of the pipe is branched into a plurality of branches. The branched pipes are connected at their respective ends to an alkali-based treatment liquid supply source 70a, an acid-based treatment liquid supply source 70b, an organic treatment liquid supply source 70c, and a DIW supply source 70d, respectively. Further, valves 60a to 60d are provided between the supply sources 70a to 70d and the nozzle 41.
The processing fluid supply unit 40 supplies the alkali-based processing liquid, the acid-based processing liquid, the organic-based processing liquid, and DIW (deionized water at room temperature) supplied from the supply sources 70a to 70d to the front surface of the wafer W from the nozzle 41, and performs liquid processing on the wafer W.
In the above description, the liquid treatment is performed on the front surface of the wafer W, but the liquid treatment is not limited to this, and the liquid treatment may be performed on the back surface and the peripheral edge of the wafer W, for example. In the present embodiment, the alkali-based treatment liquid, the acid-based treatment liquid, the organic-based treatment liquid, and the DIW are supplied from 1 nozzle 41, but the treatment fluid supply unit 40 may have a plurality of nozzles corresponding to the respective treatment liquids.
The 1 st and 2 nd rotary cups 101 and 102 that rotate integrally with the holding portion 31 are provided at the peripheral edge of the holding portion 31. As shown in fig. 3, the 2 nd rotating cup 102 is disposed inside the 1 st rotating cup 101.
These 1 st and 2 nd rotating cups 101 and 102 are formed in an annular shape as a whole. When the 1 st and 2 nd spin cups 101 and 102 rotate together with the holding portion 31, the processing liquid scattered from the rotating wafer W is guided to the collection cup 50.
Cup 50 includes first cup 50a, second cup 50b, and third cup 50c in this order from the inner side near the rotation center of wafer W held and rotated by holding unit 31. Further, collection cup 50 has a cylindrical inner wall portion 54d centered on the rotation center of wafer W on the inner peripheral side of 1 st cup 50 a.
The 1 st to 3 rd cups 50a to 50c and the inner wall portion 54d are provided on the bottom portion 53 of the collection cup 50. Specifically, the 1 st cup 50a has a1 st peripheral wall portion 54a and a1 st liquid receiving portion 55 a.
The 1 st peripheral wall portion 54a is provided standing from the bottom portion 53, and is formed in a cylindrical shape (for example, a cylindrical shape). A space is formed between the 1 st peripheral wall portion 54a and the inner wall portion 54d, and this space is defined as a1 st drain tank 501a for collecting and discharging the processing liquid and the like. The 1 st liquid-receiving portion 55a is provided above the upper surface 54a1 of the 1 st peripheral wall portion 54 a.
The 1 st cup 50a includes a1 st elevation mechanism 56, and is configured to be able to be elevated by the 1 st elevation mechanism 56. Specifically, the 1 st elevation mechanism 56 includes a1 st support member 56a and a1 st elevation driving unit 56 b.
The 1 st support member 56a is a plurality of (for example, 3, only 1 shown in fig. 3) elongated members. The 1 st support member 56a is movably inserted through a through hole formed in the 1 st peripheral wall portion 54 a. For example, a columnar rod can be used as the 1 st support member 56a, but the present invention is not limited thereto.
The 1 st support member 56a is positioned with its upper end exposed from the upper surface 54a1 of the 1 st peripheral wall portion 54a, and is connected to the lower surface of the 1 st liquid receiving portion 55a to support the 1 st liquid receiving portion 55a from below. On the other hand, the 1 st supporting member 56a has a lower end connected to the 1 st elevation driving unit 56 b.
The 1 st elevation driving portion 56b elevates the 1 st supporting member 56a in, for example, the Z-axis direction, whereby the 1 st supporting member 56a elevates the 1 st liquid receiving portion 55a relative to the 1 st peripheral wall portion 54 a. Further, an air cylinder can be used as the 1 st elevation driving portion 56 b. The 1 st elevation driving unit 56b is controlled by the control device 4.
The 1 st liquid receiving portion 55a driven by the 1 st elevation driving portion 56b moves between a processing position at which the processing liquid scattered from the rotating wafer W is received and a retracted position retracted from the processing position to a lower side.
Specifically, when the 1 st liquid receiving portion 55a is located at the processing position, an opening is formed inside the upper end of the 1 st liquid receiving portion 55a, and a flow path leading from the opening to the 1 st drain tank 501a is formed.
On the other hand, as shown in fig. 3, the inner wall portion 54d has an extended portion 54d1 extending so as to be inclined toward the peripheral edge portion of the holding portion 31. When the 1 st liquid-receiving portion 55a is at the retreat position, it abuts against the extension portion 54d1 of the inner wall portion 54d, and the opening on the inner side of the upper end is closed, whereby the flow path leading to the 1 st liquid-discharge tank 501a is closed.
The 2 nd cup 50b has the same configuration as the 1 st cup 50 a. Specifically, the 2 nd cup 50b includes a2 nd peripheral wall portion 54b, a2 nd liquid receiving portion 55b, and a2 nd elevating mechanism 57, and the 2 nd cup 50b is disposed adjacent to the 1 st cup 50a on the 1 st peripheral wall portion 54a side of the 1 st cup 50 a.
The 2 nd peripheral wall portion 54b is provided standing on the bottom portion 53 at a position on the outer peripheral side of the 1 st peripheral wall portion 54a, and is formed in a cylindrical shape. A space formed between the 2 nd peripheral wall portion 54b and the 1 st peripheral wall portion 54a is a2 nd drain tank 501b for collecting and discharging the processing liquid and the like.
The 2 nd liquid receiving portion 55b is located on the outer peripheral side of the 1 st liquid receiving portion 55a and is provided above the upper surface 54b1 of the 2 nd peripheral wall portion 54 b.
The 2 nd elevating mechanism 57 has a2 nd supporting member 57a and a2 nd elevating driving part 57 b. The 2 nd support member 57a is a plurality of (for example, 3 pieces, only 1 piece is shown in fig. 3) elongated members, and is inserted into a through hole formed in the 2 nd peripheral wall portion 54b so as to be movable. For example, a columnar rod can be used as the 2 nd support member 57a, but the present invention is not limited thereto.
The 2 nd support member 57a is positioned with the upper end exposed from the upper surface 54b1 of the 2 nd peripheral wall portion 54b, and is connected to the lower surface of the 2 nd liquid receiving portion 55b to support the 2 nd liquid receiving portion 55b from below. The upper surface 54b1 of the 2 nd peripheral wall portion 54b is positioned below the upper surface 54a1 of the 1 st peripheral wall portion 54a in the vertical direction.
The 2 nd supporting member 57a has a lower end connected to the 2 nd elevation driving part 57 b. The 2 nd elevation driving portion 57b elevates the 2 nd support member 57a in, for example, the Z-axis direction. Thereby, the 2 nd support member 57a raises and lowers the 2 nd liquid receiving portion 55b with respect to the 2 nd peripheral wall portion 54 b.
Further, an air cylinder can be used as the 2 nd elevation driving portion 57 b. The 2 nd elevation driving unit 57b is also controlled by the control device 4.
The 2 nd liquid receiving portion 55b also moves between the processing position and the retracted position. Specifically, when the 2 nd liquid receiving portion 55b is located at the processing position and the 1 st liquid receiving portion 55a is located at the retreat position, an opening is formed inside the upper end of the 2 nd liquid receiving portion 55b, and a flow path leading from the opening to the 2 nd drain tank 501b is formed.
On the other hand, as shown in fig. 3, when the 2 nd liquid receiving portion 55b is located at the retreat position, it abuts on the 1 st liquid receiving portion 55a, the opening on the inner side of the upper end is closed, and the flow path leading to the 2 nd drain tank 501b is closed. In the above description, the 2 nd liquid receiving portion 55b at the retreat position abuts on the 1 st liquid receiving portion 55a, but the present invention is not limited thereto, and for example, the opening on the inner side of the upper end may be closed by abutting on the inner wall portion 54 d.
The 3 rd cup 50c has a3 rd peripheral wall portion 54c and a3 rd liquid receiving portion 55c, and the 3 rd cup 50c is disposed adjacent to the 2 nd cup 50b on the side opposite to the 1 st cup 50 a. The 3 rd peripheral wall portion 54c is provided upright on the bottom portion 53 at a position on the outer peripheral side of the 2 nd peripheral wall portion 54b, and is formed in a cylindrical shape. The space between the 3 rd peripheral wall portion 54c and the 2 nd peripheral wall portion 54b is a3 rd drain tank 501c for collecting and discharging the processing liquid and the like.
The 3 rd liquid receiving portion 55c is formed continuously from the upper end of the 3 rd peripheral wall portion 54 c. The 3 rd liquid receiving portion 55c is formed to surround the periphery of the wafer W held by the holding portion 31 and extend above the 1 st and 2 nd liquid receiving portions 55a and 55 b.
As shown in FIG. 3, when the 1 st and 2 nd liquid-receiving portions 55a and 55b are both located at the retreat position, the 3 rd liquid-receiving portion 55c has an opening formed inside the upper end of the 3 rd liquid-receiving portion 55c, and a flow path leading from the opening to the 3 rd drain tank 501c is formed.
On the other hand, when the 2 nd liquid receiving portion 55b is located at the position after the rise, or when both the 1 st liquid receiving portion 55a and the 2 nd liquid receiving portion 55b are located at the position after the rise, the 3 rd liquid receiving portion 55c abuts on the 2 nd liquid receiving portion 55b, the opening on the inner side of the upper end is closed, and the flow path leading to the 3 rd drain tank 501c is closed.
Drain ports 51a to 51c are formed in the bottom portion 53 at intervals in the circumferential direction of the collection cup 50 at portions corresponding to the 1 st to 3 rd cup 50a to 50c, specifically, at portions corresponding to the 1 st to 3 rd drain grooves 501a to 501c of the bottom portion 53.
Here, a case will be described as an example where the treatment liquid discharged from the liquid discharge port 51a is an acid-based treatment liquid, the treatment liquid discharged from the liquid discharge port 51b is an alkali-based treatment liquid, and the treatment liquid discharged from the liquid discharge port 51c is an organic-based treatment liquid. The types of the treatment liquids discharged from the liquid discharge ports 51a to 51c are merely examples, and are not limited thereto.
The drain port 51a is connected to a drain pipe 91 a. The drain pipe 91a is provided with a valve 62a in the middle, and is branched into a1 st drain pipe 91a1 and a2 nd drain pipe 91a2 at the position of the valve 62 a. As the valve 62a, for example, a three-way valve that can be switched between a valve-closed position, a position at which the discharge path is opened toward the 1 st drain 91a1, and a position at which the discharge path is opened toward the 2 nd drain 91a2 can be used.
In the case where the above-described acid-based treatment liquid can be reused, the 1 st drain pipe 91a1 is connected to the acid-based treatment liquid supply source 70b (for example, a tank for storing the acid-based treatment liquid), and the drain liquid is returned to the acid-based treatment liquid supply source 70 b. That is, the 1 st drain pipe 91a1 functions as a circulation line. Further, the 2 nd drain pipe 91a2 is discussed later.
The drain port 51b is connected to a drain pipe 91 b. A valve 62b is provided in the middle of the drain pipe 91 b. Further, the drain port 51c is connected to a drain pipe 91 c. A valve 62c is provided in the middle of the drain pipe 91 c. Furthermore, the valves 62b, 62c are controlled by the control device 4.
When the substrate processing is performed, the processing unit 16 moves up and down the 1 st liquid receiving portion 55a of the 1 st cup 50a and the 2 nd liquid receiving portion 55b of the 2 nd cup 50b depending on the kind of the processing liquid used for each process in the substrate processing, and switches the liquid discharge ports 51a to 51 c.
For example, when the acid-based processing liquid is discharged toward the wafer W to process the wafer W, the controller 4 controls the driving unit 33 of the substrate holding mechanism 30 to open the valve 60b while rotating the holding unit 31 at a predetermined rotation speed.
At this time, control device 4 raises 1 st cup 50a in advance. That is, the controller 4 raises the 1 st support member 56a and the 2 nd support member 57a via the 1 st elevation driving unit 56b and the 2 nd elevation driving unit 57b, and raises the 1 st liquid receiving unit 55a to the processing position, thereby forming a flow path leading from the opening on the inner side of the upper end of the 1 st liquid receiving unit 55a to the 1 st liquid discharge tank 501a in advance. Thereby, the acid-based processing liquid supplied to the wafer W flows downward and flows into the 1 st drain tank 501 a.
Further, the controller 4 controls the valve 62a in advance so that the discharge path is opened toward the 1 st drain pipe 91a 1. Thus, the acid-based processing liquid flowing into the 1 st drain tank 501a is returned to the acid-based processing liquid supply source 70b via the drain pipe 91a and the 1 st drain pipe 91a 1. Then, the acid-based processing liquid returned to the acid-based processing liquid supply source 70b is supplied again to the wafer W. Thus, the 1 st cup 50a is connected to a circulation line for circulating the recovered acid-based treatment liquid and resupplying the same to the wafer W.
Further, for example, when the alkali-based processing liquid is discharged to the wafer W to process the wafer W, the controller 4 opens the valve 60a while controlling the driving unit 33 in the same manner and rotating the holding unit 31 at a predetermined rotation speed.
At this time, control device 4 raises only 2 nd cup 50b in advance. That is, the controller 4 raises the 2 nd supporting member 57a and the 2 nd liquid receiving portion 55b to the processing position by the 2 nd elevating driving portion 57b, thereby forming a flow path leading from the opening on the inside of the upper end of the 2 nd liquid receiving portion 55b to the 2 nd drain tank 501b in advance. Furthermore, the 1 st cup 50a is lowered here. Thereby, the alkali-based treatment liquid supplied to the wafer W flows downward and flows into the 2 nd drain tank 501 b.
In addition, the control device 4 opens the valve 62b in advance. Thereby, the alkali-based treatment liquid in the 2 nd drain tank 501b is discharged to the outside of the treatment unit 16 through the drain pipe 91 b. In this way, the drain pipe 91b functions as a drain line for discharging the collected 2 nd processing liquid to the outside of the processing unit 16. I.e. the 2 nd cup 50b is connected to the drain line.
For example, when the organic processing liquid is discharged to the wafer W to process the wafer W, the controller 4 opens the valve 60c while controlling the driving unit 33 in the same manner and rotating the holding unit 31 at a predetermined rotation speed.
At this time, controller 4 lowers 1 st cup 50a and 2 nd cup 50b in advance (see fig. 3). That is, the controller 4 lowers the 1 st and 2 nd support members 56a and 57a and lowers the 1 st and 2 nd liquid receivers 55a and 55b to the retracted positions by the 1 st and 2 nd elevation drivers 56b and 57 b. Thus, a flow path leading from the opening on the inside of the upper end of the 3 rd liquid receiving portion 55c to the 3 rd drain tank 501c is formed in advance. Thereby, the organic processing liquid supplied to the wafer W flows downward and flows into the 3 rd drain tank 501 c.
Further, since the controller 4 opens the valve 62c in advance, the organic processing liquid in the 3 rd drain tank 501c is discharged to the outside of the processing unit 16 through the drain pipe 91 c. In this way, the 3 rd cup 50c is also connected to a drain line (for example, a drain pipe 91c) for discharging the recovered 3 rd processing liquid to the outside of the processing unit 16.
The discharge paths of the acid-based treatment liquid, the alkali-based treatment liquid, the organic-based treatment liquid, and the cleaning liquid are illustrative and not restrictive. That is, for example, each of the drain ports 51a to 51c may be connected to 1 drain pipe, and a plurality of valves corresponding to the properties of the acidic or basic treatment liquid may be provided in the 1 drain pipe, and the discharge path may be branched from the positions of the valves.
The drain pipe 91b is connected to a drain pipe 92a communicating with a through-hole through which the 1 st supporting member 56a passes in the 1 st peripheral wall portion 54 a. The drain pipe 92a discharges a cleaning liquid (to be described later) or the like that has entered the through-hole of the 1 st peripheral wall portion 54a, and the cleaning liquid is discharged to the outside of the processing unit 16 via the drain pipe 91 b.
The drain pipe 91c is also connected to a drain pipe 92b communicating with a through-hole formed in the 2 nd peripheral wall portion 54b through which the 2 nd support member 57a passes. The drain pipe 92b discharges the cleaning liquid or the like that has entered the through-hole of the 2 nd peripheral wall portion 54b, and the cleaning liquid is discharged to the outside of the process unit 16 via the drain pipe 91 c.
Exhaust ports 52a, 52b, and 52c are formed in the bottom 53, the 1 st peripheral wall portion 54a, and the 2 nd peripheral wall portion 54b of the recovery cup 50, respectively. Further, the exhaust ports 52a, 52b, and 52c are connected to 1 exhaust pipe, and the exhaust pipe is branched into the 1 st exhaust pipe 93a to the 3 rd exhaust pipe 93c on the downstream side of the exhaust gas. Further, the valve 64a is provided in the 1 st exhaust pipe 93a, the valve 64b is provided in the 2 nd exhaust pipe 93b, and the valve 64c is provided in the 3 rd exhaust pipe 93 c.
The 1 st exhaust pipe 93a is an exhaust pipe for acidic exhaust, the 2 nd exhaust pipe 93b is an exhaust pipe for basic exhaust, and the 3 rd exhaust pipe 93c is an exhaust pipe for organic exhaust. These are switched by the control device 4 according to each process of the substrate process.
When a process for generating, for example, acidic exhaust gas is executed, the control device 4 switches to the 1 st exhaust pipe 93a, and the acidic exhaust gas is discharged through the valve 64 a. Similarly, when the alkaline exhaust gas is treated, the control device 4 switches the exhaust pipe 93b to the 2 nd exhaust pipe, and the alkaline exhaust gas is discharged through the valve 64 b. When the organic exhaust gas is generated, the control device 4 switches the exhaust pipe 93c to the 3 rd exhaust pipe, and the organic exhaust gas is discharged through the valve 64 c.
Hereinafter, in the present embodiment, BHF (a mixed solution of hydrofluoric acid and an ammonium fluoride solution (buffered hydrofluoric acid)) is used as the acid-based treatment liquid. SC1 (a mixed liquid of ammonia, hydrogen peroxide, and water) was used as the alkali-based treatment liquid, and IPA (isopropyl alcohol) was used as the organic-based treatment liquid. The types of the acid-based treatment liquid, the alkali-based treatment liquid, and the organic treatment liquid are not limited to these.
However, it can be seen that: when BHF is used in the processing unit 16, the processing liquid atmosphere of BHF or the scattered BHF enters, for example, a gap between the 1 st liquid receiving portion 55a and the 1 st peripheral wall portion 54a, the atmosphere of the BHF entering and the like is dried, and foreign matter such as crystals of BHF adheres to the upper surface 54a1 of the 1 st peripheral wall portion 54 a. The foreign matter is not limited to BHF, and may be attached to other types of treatment liquids.
Therefore, in the processing unit 16 of the present embodiment, the cleaning liquid is supplied to the upper surface 54a1 of the 1 st peripheral wall portion 54a of the 1 st cup 50 a. This can remove foreign substances such as crystals adhering to the upper surface 54a1 of the 1 st peripheral wall portion 54 a.
< 3. concrete Structure of cleaning liquid supply part and 1 st peripheral wall part
The structure for supplying the cleaning liquid to the upper surface 54a1 of the 1 st peripheral wall portion 54a will be described in detail below with reference to fig. 4 and the following drawings. Fig. 4 is a schematic plan view of the 1 st peripheral wall portion 54a as viewed from above the Z axis. Fig. 5 is a schematic cross-sectional view taken along line V-V of fig. 4. In fig. 5, for the sake of easy understanding, the 1 st liquid-receiving portion 55a provided on the upper surface 54a1 of the 1 st peripheral wall portion 54a is shown by an imaginary line.
As shown in fig. 5, the cleaning liquid supply portion 80 of the process unit 16 further has a cleaning liquid supply pipe 84c and a valve 85 c. One end of the cleaning liquid supply pipe 84c is connected to the cleaning liquid supply source 83, and a cleaning liquid discharge port 85 (hereinafter, sometimes referred to as "discharge port 85") is formed at the other end.
As shown in fig. 4 and 5, the 1 st peripheral wall portion 54a has a groove portion 58. Specifically, the groove portion 58 is formed on the inner peripheral side of the upper surface 54a1 of the 1 st peripheral wall portion 54a and is formed on the upper surface 54a1 in the circumferential direction. More specifically, the groove portion 58 is formed in an annular shape in a plan view. The position of the upper surface 54a1 of the 1 st peripheral wall portion 54a where the groove portion 58 is formed may be changed as appropriate, and may be formed closer to the outer peripheral side of the upper surface 54a1, for example.
The cleaning liquid supply pipe 84c has a plurality of (e.g., 3) discharge ports 85 formed in the upper surface 54a1 of the 1 st peripheral wall portion 54a, for example, in the groove portion 58. The discharge ports 85 are arranged at positions substantially equally spaced in the circumferential direction around the rotation center C of the holding portion 31. The number and arrangement positions of the ejection ports 85 are illustrative and not restrictive.
As shown in fig. 5, the valve 85c is provided in the cleaning liquid supply pipe 84c and is controlled by the control device 4. Therefore, the controller 4 opens the valve 85c when performing the cleaning process of the upper surface 54a1 of the 1 st peripheral wall portion 54 a. Thereby, the cleaning liquid from the cleaning liquid supply source 83 is discharged from the discharge port 85 through the valve 85c and the cleaning liquid supply pipe 84 c.
The cleaning liquid supplied from the cleaning liquid supply portion 80, more specifically, the cleaning liquid discharged from the discharge port 85 flows through the groove portion 58 and overflows from the groove portion 58. The cleaning liquid overflowing from the groove portion 58 is supplied over the entire upper surface 54a1 of the 1 st peripheral wall portion 54a, and cleans the upper surface 54a1 to remove foreign matter. The cleaning liquid having cleaned the upper surface 54a1 then flows into the side surface 54a2 of the 1 st peripheral wall portion 54a, the exhaust port 52b, and the like, and is cleaned, thereby removing the foreign matter adhering thereto.
In this way, since the groove portion 58 formed along the circumferential direction is provided in the 1 st peripheral wall portion 54a, the cleaning liquid can be supplied over a wide range of the upper surface 54a1 via the groove portion 58, and therefore, the upper surface 54a1 can be cleaned efficiently. Further, since the discharge port 85 is formed in the groove portion 58, the cleaning liquid can be reliably supplied to and flow through the groove portion 58.
As shown in fig. 5, the cleaning process may be performed in a state where the 1 st liquid receiving unit 55a is moved to the retracted position. That is, the cleaning liquid supply unit 80 may supply the cleaning liquid in a state where the 1 st liquid receiver 55a is moved to the retracted position below the processing position.
Thus, since the lower surface 55a1 of the 1 st liquid receiving portion 55a is close to the upper surface 54a1 of the 1 st peripheral wall portion 54a, the cleaning liquid flowing on the upper surface 54a1 is also supplied to the lower surface 55a1 of the 1 st liquid receiving portion 55a, and therefore, foreign matter can be removed from and cleaned to the lower surface 55a 1.
The cleaning liquid supply unit 80 may change the flow rate of the cleaning liquid when cleaning the upper surface 54a1 of the 1 st peripheral wall portion 54a and when cleaning the lower surface 55a1 of the 1 st liquid receiving portion 55 a. For example, the cleaning liquid supply unit 80 may increase the flow rate of the cleaning liquid when cleaning the lower surface 55a1 of the 1 st liquid receiving portion 55a, as compared with the flow rate of the cleaning liquid when cleaning the upper surface 54a1 of the 1 st peripheral wall portion 54 a. This enables the cleaning liquid to reliably reach the lower surface 55a1 of the 1 st liquid receiving portion 55a, and thus the lower surface 55a1 can be cleaned efficiently.
Further, the cleaning process may be performed in a state where the holding portion 31 and the 1 st and 2 nd rotary cups 101 and 102 are rotating. That is, the cleaning liquid supply portion 80 may supply the cleaning liquid to the upper surface 54a1 of the 1 st peripheral wall portion 54a while the holding portion 31 and the like are being rotated.
Thus, in the collection cup 50, a swirling flow is generated by the rotation of the holding portion 31 and the 1 st and 2 nd rotary cups 101 and 102. The swirling flow acts on the cleaning liquid discharged from the discharge port 85, and the cleaning liquid flows in one direction along the circumferential direction (the right-hand direction (clockwise direction) in fig. 4) on the upper surface 54a1 of the 1 st circumferential wall portion 54a, and the flow velocity of the cleaning liquid can be increased. This allows the cleaning liquid to spread over a wider area on the upper surface 54a1, and thus the upper surface 54a1 can be cleaned efficiently.
Fig. 6A is a schematic cross-sectional view taken along line VI-VI in fig. 4, and shows a state of cleaning in a state where the 1 st liquid-receiving portion 55a is lowered. Fig. 6B is a diagram showing a state of cleaning in a state where the 1 st liquid-receiving portion 55a is lifted. In the present embodiment, the cleaning may be performed in two states, i.e., the state after the first liquid-receiving portion 55a is raised and the state after the first liquid-receiving portion is lowered, which will be described later.
As shown in fig. 6A and 6B, the through-hole 59 through which the 1 st supporting member 56A passes is formed in the 1 st peripheral wall portion 54a as described above. The through-hole 59 has an opening 59a formed in the upper surface 54a1 of the 1 st peripheral wall portion 54 a.
As shown in fig. 4, the opening 59a of the through-hole 59 of the present embodiment is formed to overlap at least a part of the groove portion 58 in a plan view. Thus, the cleaning liquid is supplied to the cleaning liquid supply portion 80 from the groove portion 58 of the upper surface 54a1 of the 1 st peripheral wall portion 54a to the through-hole 59 via the opening portion 59 a.
As a result, as shown in fig. 6A and 6B, the outer periphery of the 1 st support member 56A and the through-hole 59 can be cleaned, and foreign matter adhering to the outer periphery of the 1 st support member 56A and the through-hole 59 can be removed. The cleaning liquid that has flowed into the through-hole 59 is discharged to the outside of the processing unit 16 through the drain pipe 92a and the valve 62 b.
< 4. concrete actions of the substrate processing System >
Next, the contents of substrate processing performed by the substrate processing system 1 according to the present embodiment will be described with reference to fig. 7.
Fig. 7 is a flowchart showing a process procedure of the process executed by the substrate processing system 1 according to the present embodiment. The respective processing procedures shown in fig. 7 are executed under the control of the control unit 18 of the control device 4.
As shown in fig. 7, the processing unit 16 first performs an input process of the wafer W (step S1). In the input process, after the wafer W is placed on the holding portion 31 by the substrate transfer device 17 (see fig. 1), the wafer W is held by the holding portion 31.
Next, in the processing unit 16, the 1 st chemical solution processing is performed (step S2). In the 1 st chemical solution treatment, the controller 18 first rotates the wafer W by rotating the holder 31 by the driver 33. Next, the controller 18 opens the valve 60a for a predetermined time to supply the SC1 from the nozzle 41 to the front surface of the wafer W. Thereby, the front surface of the wafer W is processed by the SC 1.
Next, in the processing unit 16, the 1 st flushing processing is performed (step S3). In the 1 st rinsing process, the controller 18 opens the valve 60d for a predetermined time to supply DIW from the nozzle 41 to the wafer W. Thus, SC1 remaining on wafer W is washed away by DIW.
Next, in the processing unit 16, the 2 nd chemical solution processing is performed (step S4). In the chemical solution treatment 2, the controller 18 opens the valve 60b for a predetermined time to supply BHF from the nozzle 41 to the surface of the wafer W. Thereby, the surface of the wafer W is processed by BHF.
Next, in the processing unit 16, the 2 nd flushing processing is performed (step S5). In the 2 nd rinsing process, the controller 18 opens the valve 60d for a predetermined time to supply DIW from the nozzle 41 to the front surface of the wafer W. This flushes BHF remaining on the wafer W with the DIW.
Next, in the processing unit 16, a drying process is performed (step S6). In the drying process, the controller 18 opens the valve 60c for a predetermined time to supply IPA from the nozzle 41 to the front surface of the wafer W. Thus, the DIW remaining on the surface of the wafer W is replaced with IPA having a higher volatility than the DIW. Thereafter, IPA on the wafer W is spun off to dry the wafer W.
Next, in the processing unit 16, output processing is performed (step S7). In the output process, the control unit 18 stops the rotation of the wafer W by the drive unit 33, and then the wafer W is output from the processing unit 16 by the substrate transport device 17 (see fig. 1). When the output process is completed, a series of substrate processes for 1 wafer W is completed.
Next, in the processing unit 16, a cleaning process of cleaning the upper surface 54a1 of the 1 st peripheral wall portion 54a is performed (step S8). Further, the cleaning process need not be performed every time 1 wafer W is output. That is, the timing of performing the cleaning process may be set arbitrarily, and the cleaning process may be performed 1 time after the substrate process is performed on the plurality of wafers W, for example. In addition, the substrate holding mechanism 30 may be cleaned in the process of step S8.
The cleaning process of the 1 st peripheral wall portion 54a will be described with reference to fig. 8. Fig. 8 is a flowchart showing an example of a process procedure of the cleaning process of the 1 st peripheral wall portion 54a executed in the substrate processing system 1.
The control unit 18 of the control device 4 raises the 1 st supporting member 56a by the 1 st elevation driving unit 56B to raise the 1 st liquid receiving unit 55a (step s 10. refer to fig. 6B). Next, the control unit 18 opens the valve 85c of the cleaning liquid supply unit 80 to supply the cleaning liquid to the upper surface 54a1 of the 1 st peripheral wall portion 54a (step S11).
Next, when a predetermined time has elapsed since the supply of the cleaning liquid, the control unit 18 moves the 1 st liquid receiving unit 55a to the retracted position by lowering the 1 st supporting member 56A by the 1 st elevation driving unit 56b (step s 12. see fig. 6A).
In this way, by setting the 1 st liquid-receiving portion 55a to the retracted position, the lower surface 55a1 of the 1 st liquid-receiving portion 55a can be cleaned. Further, by raising and lowering the 1 st liquid receiving portion 55a during the cleaning process, the 1 st supporting member 56a moves in the through-hole 59 filled with the cleaning liquid, and therefore, foreign matter adhering to the outer periphery of the 1 st supporting member 56a can be efficiently removed. Further, the above-described operation of lifting and lowering the 1 st liquid-receiving portion 55a may be repeated a plurality of times.
Next, when a predetermined time has elapsed since the first liquid receiving portion 55a was lowered, the control portion 18 closes the valve 85c of the cleaning liquid supply portion 80, and stops the supply of the cleaning liquid to the upper surface 54a1 of the first peripheral wall portion 54a (step S13). Thereby, the cleaning process of the 1 st peripheral wall portion 54a is completed.
Further, the control unit 18 may perform the cleaning process while rotating the holding unit 31 and the 1 st and 2 nd rotating cups 101 and 102. The cleaning liquid spreads over a wide range on the upper surface 54a1 as described above by generating a swirling flow by rotating the holding portion 31 and the like.
As described above, the process unit 16 (corresponding to an example of the "substrate processing apparatus") according to embodiment 1 includes the holding unit 31, the process fluid supply unit 40 (corresponding to an example of the "process liquid supply unit"), the collection cup 50, and the cleaning liquid supply unit 80. The holding portion 31 holds the wafer W. The processing fluid supply unit 40 supplies a processing liquid to the wafer W.
The 1 st cup 50a of the recovery cup 50 has: a bottom 53; a cylindrical 1 st peripheral wall portion 54a erected from the bottom portion 53; a1 st liquid receiving portion 55a provided above the 1 st peripheral wall portion 54a and receiving the processing liquid scattered from the wafer W; a groove portion 58 formed along the circumferential direction on the upper surface of the 1 st circumferential wall portion 54a, and the 1 st cup 50a of the collection cup 50 surrounds the holding portion 31. The cleaning liquid supply portion 80 is for supplying a cleaning liquid to the upper surface 54a1 of the 1 st peripheral wall portion 54 a. This can remove foreign matter adhering to the upper surface 54a1 of the 1 st peripheral wall portion 54 a.
< 5. modification
Next, modifications 1 to 4 of the processing unit 16 according to embodiment 1 will be described. In the processing unit 16 according to modification 1, the shape of the groove portion 58 formed in the annular shape in embodiment 1 is changed.
Fig. 9 is a schematic plan view of the 1 st peripheral wall portion 54a in the 1 st modification example as viewed from above the Z axis. As shown in fig. 9, in modification 1, the groove portion 58 is divided into a plurality of portions (3 portions in the example of fig. 9), and the divided groove portion 58 is formed along the circumferential direction on the upper surface 54a1 of the 1 st circumferential wall portion 54 a.
The above-described discharge ports 85 for the cleaning liquid are formed in the divided grooves 58. The position where the ejection port 85 is formed is preferably, for example, near the end portion on the upstream side in the flow direction of the cleaning liquid in the groove portion 58. Thus, the cleaning liquid can be flowed from the end portion of the groove portion 58, and therefore, the cleaning liquid overflowing from the groove portion 58 while flowing through the groove portion 58 can be spread over a wide range on the upper surface 54a1, and the upper surface 54a1 can be cleaned efficiently. The position of the groove portion 58 where the ejection port 85 is formed is not limited to the above position.
Next, a2 nd modification will be described. In the process unit 16 of modification 2, the direction of the ejection port 85 of the cleaning liquid supply portion 80 is changed. Fig. 10 is an enlarged vertical sectional view showing the vicinity of the discharge port 85 of the cleaning liquid supply pipe 84c in the 2 nd modification.
As shown in fig. 10, in modification 2, the discharge port 85 is connected to a cleaning liquid supply path 84c1 through which the cleaning liquid supplied from the cleaning liquid supply pipe 84c flows. The cleaning liquid supply path 84c1 is inclined in the circumferential direction (left-right direction of the drawing in fig. 10) of the 1 st circumferential wall portion 54a, and the discharge direction of the discharge port 85 is inclined with respect to the Z-axis direction. In other words, the cleaning liquid supply path 84c1 is configured such that the discharge direction of the cleaning liquid from the discharge port 85 is directed in one direction along the circumferential direction on the upper surface 54a1 of the 1 st circumferential wall portion 54 a. Here, the "one direction" refers to the same direction as the direction of the force acting on the cleaning liquid by the revolving flow of the 1 st and 2 nd rotating cups 101 and 102, that is, the clockwise direction in fig. 4.
Accordingly, the cleaning liquid can be caused to flow in one direction along the circumferential direction on the upper surface 54a1 of the 1 st peripheral wall portion 54a regardless of the presence or absence of the swirling flow, and therefore, the cleaning liquid can be spread over a wider range on the upper surface 54a1, and cleaning can be performed efficiently.
In the processing unit 16, the flow rate of the cleaning liquid discharged from the discharge port 85 of the cleaning liquid supply portion 80 may be changed according to the portion to be cleaned on the upper surface 54a1 of the 1 st peripheral wall portion 54 a.
Fig. 11 is a diagram showing an example of a relationship between a distance from the discharge port 85 to a site to be cleaned and a flow rate of the cleaning liquid. As shown in fig. 11, when the distance from the discharge port 85 to the cleaning site is relatively short, that is, when cleaning the vicinity of the discharge port 85, for example, the flow rate a of the cleaning liquid is set to a relatively low value. This allows the cleaning liquid to be supplied relatively in large amounts to the vicinity of the discharge port 85, and the vicinity of the discharge port 85 can be cleaned efficiently.
On the other hand, in the case where the distance from the discharge port 85 to the cleaning site is relatively long, that is, in the case of cleaning the vicinity of the 1 st supporting member 56a relatively distant from the discharge port 85, for example, the flow rate B of the cleaning liquid is set to a higher value than the case of cleaning the vicinity of the discharge port 85. This allows the cleaning liquid to be supplied relatively in large amounts to the vicinity of the 1 st supporting member 56a, for example, and the vicinity of the 1 st supporting member 56a can be cleaned efficiently.
In this way, by changing the flow rate of the cleaning liquid discharged from the discharge port 85 in accordance with the portion to be cleaned on the upper surface 54a1 of the 1 st peripheral wall portion 54a, local cleaning can be performed on the upper surface 54a 1.
In the example shown in fig. 11, the flow rate of the cleaning liquid is continuously increased as the distance from the discharge port 85 to the cleaning site becomes longer, but this is by way of example and not of limitation. That is, the method of increasing the flow rate of the cleaning liquid can be arbitrarily changed, for example, by increasing the flow rate of the cleaning liquid stepwise (stepwise).
Next, a modification 3 will be described. Fig. 12A is a schematic cross-sectional view showing the 1 st peripheral wall portion 54a in the 3 rd modification.
As shown in fig. 12A, the 1 st peripheral wall portion 54a in the 3 rd modification has an inclined portion 54a 3. The inclined portion 54a3 is formed on the upper surface 54a1 so as to be inclined downward toward the groove portion 58. Thus, even when the cleaning liquid a remains on the upper surface 54a1 after the cleaning process, the remaining cleaning liquid a flows into the cleaning liquid supply pipe 84c along the inclined portion 54a 3.
In this way, in modification 3, by providing the inclined portion 54a3, the remaining cleaning liquid a is less likely to stay on the upper surface 54a 1. This can suppress a decrease in the concentration of the processing liquid in the substrate processing performed after the cleaning processing.
That is, for example, if the cleaning liquid a remains on the upper surface 54a1, the cleaning liquid a may mix into the processing liquid during the substrate processing after the cleaning processing, and the concentration of the processing liquid may decrease. However, in modification 3, the inclined portion 54a3 as described above is provided, so that the decrease in the concentration of the processing liquid can be suppressed.
Next, a4 th modification will be described. In the above-described modification 3, the inclined portion 54a3 is formed so as to incline downward toward the groove portion 58, but the shape of the inclined portion is not limited thereto. Fig. 12B is a schematic cross-sectional view showing the 1 st peripheral wall portion 54a in the 4 th modification.
As shown in fig. 12B, the inclined portion 54a4 of the 4 th modification is formed on the upper surface 54a1 of the 1 st peripheral wall portion 54a, and is formed to be inclined downward toward the side surface 54a2 of the 1 st peripheral wall portion 54 a.
Thus, for example, the cleaning liquid a remaining on the upper surface 54a1 after the cleaning process flows along the inclined portion 54a4 toward the side surface 54a2 and is discharged. Therefore, in the 4 th modification, by providing the inclined portion 54a4 as in the 3 rd modification, it is possible to make it difficult for the residual cleaning liquid a to stay on the upper surface 54a1, and therefore, it is possible to suppress a decrease in the concentration of the processing liquid in the substrate processing performed after the cleaning processing.
(embodiment 2)
Next, the substrate processing system 1 according to embodiment 2 will be described. In the following description, the same portions as those described above are denoted by the same reference numerals, and redundant description thereof is omitted.
In embodiment 2, the back surface side of the holding portion 31 is configured to suppress the processing liquid from splashing toward the rotation center C. This structure will be described below with reference to fig. 13 and subsequent drawings.
Fig. 13 is a schematic bottom view of the back surface 31a of the holding portion 31 as viewed from below the Z axis. As shown in fig. 13, on the back surface 31a of the holding portion 31, a1 st fixing portion 110 for fixing the holding member 311 to the holding portion 31 and a2 nd fixing portion 120 for fixing the support pins 312 (see fig. 17) of the wafer W to the holding portion 31 are provided.
A plurality of (3 in the example of fig. 13) 1 st fixing parts 110 and 2 nd fixing parts 120 are provided, respectively. The 1 st fixing portion 110 and the 2 nd fixing portion 120 are disposed at positions that are substantially equally spaced in the circumferential direction around the rotation center C of the holding portion 31. The number and arrangement positions of the 1 st fixing unit 110 and the 2 nd fixing unit 120 are not limited to the examples.
Fig. 14A is an enlarged schematic bottom view of the 1 st fixing unit 110, and fig. 14B is a schematic bottom view of the 1 st fixing unit 210 of the comparative example. Fig. 15 is a sectional view taken along line XV-XV of fig. 13.
As shown in fig. 15, the holding member 311 is positioned so as to penetrate through the through hole 31b of the holding portion 31, and sandwiches and holds the wafer W with the notched portion on the one end 311a side. The other end 311b of the holding member 311 is exposed to the back surface 31a of the holding portion 31, and the other end 311b is fixed by the 1 st fixing portion 110.
Before continuing to describe the 1 st fixing unit 110, the 1 st fixing unit 210 of the comparative example will be described with reference to fig. 14B. As shown in fig. 14B, the 1 st fixing part 210 in the comparative example includes: a main body portion 211 that partially sandwiches both side surfaces of the other end 311b of the holding portion 31; and a screw 212 for fastening and fixing the body 211 to the holding portion 31.
The body 211 has a shape in which the other end 311b of the holding portion 31 protrudes toward the rotation center C (see fig. 13) of the holding portion 31 at a position where the other end 311b is sandwiched. In addition, a linear groove screw is used as the screw 212.
If the 1 st fixing unit 210 is configured as described above, for example, the treatment liquid may splash toward the rotation center C of the holding unit 31, and foreign matter such as crystals of the treatment liquid may adhere to the vicinity of the 1 st fixing unit 210.
That is, when the holding portion 31 rotates in the rotation direction D, the scattered processing liquid may hit a portion protruding from the body portion 211 and be scattered toward the rotation center C of the holding portion 31 as shown by a broken closed curve B1 in fig. 14B.
In the case where the screw 212 is a straight-groove screw, the treatment liquid is splashed toward the rotation center C of the holding portion 31 through the straight-groove 212a due to the direction of the straight-groove 212 a. The processing liquid splashed as described above may be dried on the back surface 31a of the holding portion 31 and may be deposited as foreign matter such as crystals.
Therefore, the 1 st fixing portion 110 according to embodiment 2 is configured to suppress the generation of the liquid splash as described above. Specifically, as shown in fig. 14A, the 1 st fixing portion 110 includes a main body portion 111 and a screw 112.
The body 111 entirely sandwiches both side surfaces of the other end 311b of the holding portion 31. That is, the other end 311b of the holding portion 31 is not protruded at the position where the holding portion 31 is sandwiched by the body 111. This can prevent the processing liquid from hitting the body 111 and splashing.
In the main body 111, an inclined guide portion 111a for guiding the processing liquid to the outside of the holding portion 31 is formed on a side surface which the scattered processing liquid easily hits, that is, a side surface on the side of the rotation direction D. This allows the scattered processing liquid to flow outside the holding portion 31 by the inclined guide portion 111a, thereby suppressing the scattering of the processing liquid.
In addition, a hexagonal screw is used as the screw 112. This can suppress the processing liquid from splashing toward the rotation center C on the holding portion 31 side through the groove of the head of the screw 112. The screw 112 is not limited to a hexagonal screw, and may be any type of screw as long as a groove through which the treatment liquid flows is not formed in the head portion.
As shown by imaginary lines in fig. 14A, the inclined guide portion 111c may be formed on the side surface of the main body portion 111 opposite to the side surface on which the inclined guide portion 111a is formed. This allows the scattered processing liquid to flow outside the holding portion 31 by the inclined guide portion 111c, and thus the scattering of the processing liquid can be further suppressed.
Next, the 2 nd fixing part 120 will be described with reference to fig. 16 and 17. Fig. 16 is a schematic bottom view showing the second fixing portion 120 in an enlarged manner, and fig. 17 is a sectional view taken along line XVII-XVII in fig. 13.
As shown in fig. 17, the support pins 312 of the wafer W support the wafer W from the lower surface side. Specifically, the support pins 312 are positioned so as to penetrate through the through-holes 31c of the holding portion 31, and support the wafer W on the one end 312a side. The other end 312b of the support pin 312 protrudes toward the back surface 31a of the holding portion 31, and the other end 312b is fixed by the 2 nd fixing portion 120.
The 2 nd fixing portion 120 according to embodiment 2 is configured to suppress the generation of the liquid splash as described above. Specifically, as shown in fig. 16, the 2 nd fixing portion 120 includes a body portion 121 and a screw 122.
The main body 121 is formed in a quadrangular shape in a bottom view. This can prevent the processing liquid from hitting the body 121 and splashing.
In the main body 121, an inclined guide portion 121a for guiding the processing liquid to the outside of the holding portion 31 is formed on a side surface which the scattered processing liquid easily hits, that is, a side surface on the side of the rotation direction D. This allows the scattered processing liquid to flow outside the holding portion 31 by the inclined guide portion 121a, thereby suppressing the scattering of the processing liquid.
In addition, a hexagonal screw is used as the screw 122. This can suppress the liquid from splashing toward the rotation center C of the holding portion 31. As with the screw 112, the screw 122 is not limited to a hexagonal screw.
As shown by imaginary lines in fig. 16, the inclined guide portion 121c may be formed also on the side surface of the body portion 121 opposite to the side surface on which the inclined guide portion 121a is formed. This allows the scattered processing liquid to flow outside the holding portion 31 by the inclined guide portion 121c, and thus, the splashing of the processing liquid can be further suppressed.
(embodiment 3)
Next, the cleaning liquid supply unit 80 of the process unit 16 according to embodiment 3 will be described. Fig. 18 is a schematic plan view of the 1 st peripheral wall portion 54a in embodiment 3. As shown in fig. 18, in embodiment 3, the ejection port 85 is an opening formed over a predetermined range in the bottom surface of the groove portion 58. The boundary between the discharge port 85 and the groove 58 includes the upper end edge 84d of the inclined portion of the cleaning liquid supply path 84c1 (see fig. 19 and 20 to be discussed later), but is not limited thereto. The opening area of the discharge port 85 is formed larger than the area of the flow path of the cleaning liquid supply pipe 84c (see fig. 20).
Further, by providing the intermediate portion 400 between the discharge port 85 and the cleaning liquid supply pipe 84c, the water potential of the cleaning liquid from the cleaning liquid supply pipe 84c is weakened, and the discharge direction of the discharge port 85 is inclined, so that the flow path of the cleaning liquid from the cleaning liquid supply pipe 84c is directed toward the groove portion 58. In other words, the intermediate portion 400 has a function as a buffer for reducing the water potential of the cleaning liquid supplied from the cleaning liquid supply pipe 84c to a value suitable for the water potential supplied to the upper surface 54a1 and the groove portion 58, and a function of changing the direction of the flow path of the cleaning liquid.
Hereinafter, a detailed structure of the intermediate portion 400 will be described with reference to fig. 19 and 20. Fig. 19 is a schematic enlarged plan view enlarged in the vicinity of a closed curve E1 indicated by a one-dot chain line in fig. 18. In addition, FIG. 20 is a sectional view taken along line XX-XX of FIG. 19.
As shown in fig. 19 and 20, the cleaning liquid supply portion 80 has an intermediate portion 400, and the intermediate portion 400 is constituted by a base portion 401 having a concave portion 402 and a flow path 403.
The base 401 is formed in a cylindrical shape (an example of a columnar shape), but is not limited thereto, and may be formed in another shape such as a prismatic shape. The recess 402 is formed in the side surface of the base 401 along the circumferential direction. In the example shown in fig. 19 and 20, the concave portion 402 is formed over the entire circumference of the side surface of the base 401, but the concave portion is not limited thereto and may be formed in a part of the side surface of the base 401.
Further, a retention portion 404 is formed between the recess 402 and the 1 st peripheral wall portion 54 a. The retention portion 404 is a space formed by the concave portion 402 and the 1 st peripheral wall portion 54a in a state where the intermediate portion 400 is attached to the 1 st peripheral wall portion 54 a. As will be described later, the cleaning liquid supplied from the cleaning liquid supply pipe 84c is once accumulated in the accumulation portion 404, and therefore, the water potential of the cleaning liquid can be weakened and the cleaning liquid can be prevented from scattering. Further, the flow rate of the cleaning liquid can be increased by the retention of the cleaning liquid in the retention portion 404, and the cleaning liquid can be diffused to the entire groove portion 58 in a short time.
The flow path 403 is formed inside the base 401, and through which the cleaning liquid supplied from the cleaning liquid supply pipe 84c flows. The flow channel 403 has an inlet 403a formed at one end and an outlet 403b formed at the other end.
Further, an opposing surface 405 is formed on the surface of the flow channel 403 opposing the inlet 403 a.
The inlet 403a is formed near the center of the lower surface of the base 401, and is connected to the cleaning liquid supply pipe 84c to allow the cleaning liquid to flow therein. The outlet 403b is formed in the recess 402 and allows the cleaning liquid flowing into the inlet 403a to flow out. In other words, the outflow port 403b is formed in the side surface of the base 401. As described above, the inlet 403a is formed on the lower surface of the base 401, the outlet 403b is formed on the side surface of the base 401, and the opposing surface 405 is formed on the upper surface of the flow channel 403 opposing the inlet 403a, and therefore, the flow channel 403 is formed in a shape curved inside the base 401, for example, in an inverted L shape in cross section, but the shape and the like are not limited thereto.
As shown in fig. 20, the intermediate portion 400 configured as described above is attached to the attachment hole 86 formed in the 1 st peripheral wall portion 54 a. At this time, the intermediate portion 400 is attached to the attachment hole 86 such that the axial direction of the columnar base portion 401 is along the Z-axis direction. In addition, the intermediate portion 400 is positioned at a position where the inlet 403a is connected to the cleaning liquid supply pipe 84c and the outlet 403b is inclined toward the cleaning liquid supply path 84c1 in a state of being attached to the attachment hole 86.
Next, the flow of the cleaning liquid is described, and as shown by the broken-line arrows in fig. 20, the cleaning liquid flows from the cleaning liquid supply pipe 84c into the inlet 403a, and is then discharged from the outlet 403b via the flow path 403. At this time, the cleaning liquid flows toward the outlet 403b after hitting the opposing surface 405 which is the upper end of the flow path 403, and therefore the water potential is appropriately weakened. Since the outlet 403b is formed in the recess 402, the cleaning liquid discharged from the outlet 403b collides with the inclined portion of the cleaning liquid supply path 84c1 and bounces back, and the cleaning liquid is once accumulated in the retention portion 404, and the flow rate is increased.
The cleaning liquid having an increased flow rate in the retention portion 404 flows from the inclined portion of the cleaning liquid supply path 84c1 toward the upper end edge 84d, and is discharged from the discharge port 85 in a direction along the groove portion 58 (in the left direction of the paper surface in fig. 20). That is, the intermediate portion 400 causes the discharge direction of the discharge port 85 to be inclined with respect to the Z-axis direction, and causes the cleaning liquid to be discharged from the discharge port 85 in a direction along the groove portion 58.
Thus, in embodiment 3, as shown in fig. 18, the cleaning liquid can be made to flow in one direction along the circumferential direction on the upper surface 54a1 of the 1 st circumferential wall portion 54a, and therefore, the cleaning liquid can be spread over a wider range on the upper surface 54a1, and cleaning can be performed efficiently.
The opening area of the discharge port 85 is formed larger than the area of the flow path of the cleaning liquid supply pipe 84 c. This makes it possible to supply a relatively large amount of the cleaning liquid to the groove portion 58 and to diffuse the cleaning liquid to the entire groove portion 58 in a short time. In addition, excessive water potential can be not applied to the cleaning liquid. The intermediate portion 400 is independent from the 1 st peripheral wall portion 54a, but may be integrally formed.
(embodiment 4)
Next, the cleaning liquid supply unit 80 of the process unit 16 according to embodiment 4 will be described. The intermediate portion 400 of embodiment 4 has a plurality of (for example, two) outflow ports 403 b.
Fig. 21 is a schematic plan view of the 1 st peripheral wall portion 54a in embodiment 4. As shown in fig. 21, in embodiment 4, the discharge port 85 is an opening having a larger opening area in plan view than the discharge port 85 of embodiment 3.
The cleaning liquid supply path 84c1 connected to the ejection port 85 includes a1 st cleaning liquid supply path 84c11 and a2 nd cleaning liquid supply path 84c12, and the intermediate portion 400 is provided between the 1 st cleaning liquid supply path 84c11 and the 2 nd cleaning liquid supply path 84c 12.
Fig. 22 is a schematic enlarged plan view enlarged in the vicinity of a closed curve E2 shown by a one-dot chain line in fig. 21, and fig. 23 is a sectional view taken along line XXIII-XXIII of fig. 22.
In the example shown in fig. 23, the 1 st cleaning liquid supply path 84c11 has a portion inclined to the Y-axis negative direction side with respect to the Z-axis direction, and the 2 nd cleaning liquid supply path 84c12 has a portion inclined to the Y-axis positive direction side with respect to the Z-axis direction. That is, the 1 st cleaning liquid supply path 84c11 and the 2 nd cleaning liquid supply path 84c12 are formed in a substantially bilaterally symmetrical manner. The above-described shapes of the first cleaning liquid supply path 84c11 and the second cleaning liquid supply path 84c12 in the inclined directions and in the substantially symmetrical left-right direction are merely illustrative and not restrictive. The boundary between the ejection port 85 and the groove portion 58 includes the upper end edge 84d1 of the inclined portion of the 1 st cleaning liquid supply path 84c11 and the upper end edge 84d2 of the inclined portion of the 2 nd cleaning liquid supply path 84c12, but is not limited thereto.
The intermediate portion 400 of the cleaning liquid supply portion 80 has outflow ports 403b1, 403b2 that open toward a plurality of (e.g., two) cleaning liquids that are different from each other. Among them, one of the outflow ports 403b1 may be referred to as "the 1 st outflow port 403b 1", and the other outflow port 403b2 may be referred to as "the 2 nd outflow port 403b 2".
Specifically, the intermediate portion 400 is branched at a middle portion of the flow path 403, and the branched flow path 403 has a1 st outflow port 403b1 formed at one end on the downstream side and a2 nd outflow port 403b2 formed at the other end. For example, the opening of the 1 st outflow port 403b1 is oriented in the left direction of the drawing sheet of fig. 23, and the opening of the 2 nd outflow port 403b2 is oriented in the right direction of the drawing sheet of fig. 23. That is, the 1 st outflow port 403b1 and the 2 nd outflow port 403b2 may be formed at positions facing each other.
In other words, the 1 st outlet 403b1 and the 2 nd outlet 403b2 may be open in a left-right symmetrical shape or a substantially left-right symmetrical shape when viewed in cross section along the circumferential direction of the 1 st circumferential wall portion 54a, and in this case, the flow channel 403 may be formed in a T shape, for example, when viewed in cross section, in the interior of the base 401. The shapes, the numbers, and the like of the flow channel 403, the 1 st outflow 403b1, and the 2 nd outflow 403b2 are illustrative and not restrictive.
In the state where the intermediate portion 400 is attached to the attachment hole 86, the 1 st outlet 403b1 is positioned at a position inclined toward the 1 st cleaning liquid supply path 84c11 and the 2 nd outlet 403b2 is positioned at a position inclined toward the 2 nd cleaning liquid supply path 84c 12.
The intermediate portion 400, the 1 st cleaning liquid supply path 84c11, and the 2 nd cleaning liquid supply path 84c12 are configured as described above, and the cleaning liquid is ejected in two directions from the intermediate portion 400. That is, as indicated by the broken line arrows, the cleaning liquid discharged from the 1 st outlet 403b1 through the flow path 403 flows from the inclined portion of the 1 st cleaning liquid supply path 84c11 toward the upper end edge 84d1, and is discharged from the discharge port 85 in the direction along the groove portion 58 (in the left direction of the drawing in fig. 23).
On the other hand, as indicated by the one-dot chain line arrows, the cleaning liquid discharged from the 2 nd outlet 403b2 through the flow path 403 flows from the inclined portion of the 2 nd cleaning liquid supply path 84c12 toward the upper end edge 84d2, and is discharged from the discharge port 85 in a direction along the groove portion 58 (in the right direction of the sheet in fig. 23).
Therefore, in embodiment 4, as shown in fig. 21, the discharge port 85 can discharge the cleaning liquid toward the through-holes 59 adjacent to the discharge port 85 on both sides in a plan view, and therefore, the portion of the upper surface 54a1 located between the discharge port 85 and the adjacent through-holes 59 can be cleaned quickly and efficiently.
Although not shown, in the intermediate portion 400, for example, an outlet for the cleaning liquid may be formed in the upper surface of the base 401, and the upper surface of the base 401 may be cleaned by allowing the cleaning liquid to flow out from the outlet.
< 6. Another example of cleaning treatment >
Next, another example of the cleaning process will be described. The cleaning process is described above with reference to fig. 8, but the cleaning process is not limited to this. Fig. 24 is a flowchart showing another example of the processing procedure of the cleaning process. The process of fig. 24 may be performed by, for example, the processing unit 16 according to embodiment 4, but is not limited thereto.
As shown in fig. 24, the control unit 18 of the control device 4 moves the 1 st liquid receiving portion 55a down to the retracted position by the 1 st elevation driving portion 56b, and then supplies the cleaning liquid (step S20). This enables cleaning of the vicinity of the discharge port 85 and the intermediate portion 400, for example.
Next, the control unit 18 raises the 1 st liquid receiving portion 55a to move to the processing position, and then supplies the cleaning liquid while rotating the holding portion 31 counterclockwise by the driving unit 33 (step S21). Since the swirling flow is generated by rotating the holding portion 31 in this manner, the cleaning liquid can be cleaned over a wide range from the discharge port 85 along the groove portion 58.
Next, the control unit 18 lowers the 1 st liquid receiving portion 55a to move to the retracted position, and then supplies the cleaning liquid while rotating the holding portion 31 counterclockwise (step S22). This enables the lower surface 55a1 of the 1 st liquid-receiving part 55a and the upper surface 54a1 of the 1 st peripheral wall part 54a to be cleaned. The control unit 18 may repeat the above-described processing of steps S20 to S22 a predetermined number of times.
Next, the control unit 18 raises the 1 st liquid receiving portion 55a to move to the processing position, and then supplies the cleaning liquid while rotating the holding portion 31 counterclockwise (step S23).
Next, the control unit 18 supplies the cleaning liquid while rotating the holding unit 31 clockwise in a state where the 1 st liquid-receiving portion 55a is held in the raised state (step S24). As described above, in the present embodiment, the cleaning liquid is supplied in a state where the holding portion 31 is rotated counterclockwise (an example of a predetermined direction), and then the cleaning liquid is supplied in a state where the holding portion 31 is rotated clockwise (an example of a direction opposite to the predetermined direction).
Thus, for example, as shown in fig. 21, when the holding portion 31 rotates counterclockwise, the cleaning liquid is supplied in a large amount in the arrow direction of the one-dot chain line, and the portion where the cleaning liquid is supplied in a large amount can be intensively cleaned. On the other hand, when the holding portion 31 rotates clockwise, the cleaning liquid is supplied in a large amount in the direction of the broken line arrow, and the cleaning can be performed with emphasis on the portion where the cleaning liquid is supplied in a large amount. That is, the upper surface 54a1 of the 1 st peripheral wall portion 54a can be cleaned more efficiently by switching the rotation direction of the holding portion 31 during the cleaning process.
Continuing with the description of fig. 24, the control unit 18 then lowers the 1 st liquid receiving portion 55a to move it to the retracted position, and then rotates the holding portion 31 clockwise while supplying the cleaning liquid (step S25). The control unit 18 may repeat the above-described processing of steps S24 and S25 a predetermined number of times.
Next, the control unit 18 raises the 1 st liquid receiving portion 55a to move to the processing position, and then supplies the cleaning liquid while rotating the holding portion 31 clockwise (step S26).
Next, the outer peripheral side of the 1 st liquid receiving portion 55a is cleaned. Specifically, the control unit 18 moves the 1 st liquid receiving unit 55a downward to the retreat position and moves the 2 nd liquid receiving unit 55b upward to the processing position (see fig. 3). Thereby, the 1 st liquid-receiving portion 55a is separated from the 2 nd liquid-receiving portion 55 b.
Then, the control unit 18 moves the nozzle 41 of the treatment fluid supply unit 40 to the vicinity of the 1 st liquid receiving unit 55a, and then ejects DIW as a cleaning liquid. Thereby, the cleaning liquid is supplied from the gap between the 1 st liquid-receiving portion 55a and the 2 nd liquid-receiving portion 55b to the outer peripheral side of the 1 st liquid-receiving portion 55a, and thus the cleaning of the outer peripheral side of the 1 st liquid-receiving portion 55a is performed (step S27).
Further, since the cleaning of the inner peripheral side of the 1 st liquid-receiving portion 55a is performed in the 2 nd chemical solution treatment shown in step S4 in fig. 7, for example, the cleaning is not performed in the main cleaning treatment, but may be performed before and after the cleaning of the outer peripheral side of the 1 st liquid-receiving portion 55 a. Further, in cleaning the inner peripheral side of the 1 st liquid-receiving portion 55a, for example, the 2 nd chemical solution may be supplied to the inner peripheral side of the 1 st liquid-receiving portion 55a for several seconds to wash out the crystals. At this time, since the 2 nd chemical solution flushed out of the 1 st liquid-receiving part 55a may contain crystals, the 2 nd chemical solution may be flowed into the drain line without entering the recovery line, and at a time when a predetermined time has elapsed and no crystals are contained, the recovery may be started by switching from the drain line to the recovery line.
When the lower surface 55a1 of the 1 st liquid-receiving part 55a, the upper surface 54a1 of the 1 st peripheral wall part 54a, and the outer peripheral side of the 1 st liquid-receiving part 55a are cleaned, a cleaning liquid containing crystals of BHF or the like, for example, flows into the 2 nd drain tank 501b (see FIG. 3). Since the 2 nd drain tank 501b is a drain tank for the alkali-based treatment liquid, it is not preferable that the cleaning liquid containing crystals of BHF as the acid-based treatment liquid flows into the drain line from the 2 nd drain tank 501b through the drain pipe 91 b.
Therefore, in the present embodiment, when the cleaning liquid containing crystals of BHF flows into the 2 nd drain tank 501b, the valve 62b is switched to flow the cleaning liquid flowing into the 2 nd drain pipe 91a2 serving as a drain line of the cleaning liquid, although not shown. This prevents the flow of the cleaning liquid containing crystals of BHF or the like to the downstream side of the valve 62b, and prevents the inflow of the cleaning liquid containing crystals of BHF or the like to the drain line of the alkali-based treatment liquid.
Next, as described with reference to fig. 24, the control unit 18 performs the drying process (step S28). Specifically, the control unit 18 stops the supply of the cleaning liquid, and causes the holding unit 31 to rotate clockwise to generate a swirling flow, thereby drying the 1 st peripheral wall portion 54a and the 1 st liquid-receiving portion 55 a. When the drying process is completed, a series of cleaning processes are completed.
In the above embodiment, the cleaning liquid is supplied from the discharge port 85 of the cleaning liquid supply pipe 84c to the upper surface 54a1 of the 1 st peripheral wall portion 54a, but the present invention is not limited thereto. That is, for example, a supply nozzle of the cleaning liquid may be disposed at a position facing the upper surface 54a1, and the cleaning liquid may be supplied from the supply nozzle to the upper surface 54a 1.
In the above description, the cleaning liquid supply portion 80 cleans the upper surface 54a1 of the 1 st peripheral wall portion 54a, but is not limited thereto. That is, the cleaning liquid supply portion 80 may be configured to clean the upper surface 54b1 of the 2 nd peripheral wall portion 54b instead of the upper surface 54a1 or the cleaning liquid supply portion 80 may be configured to clean the upper surface 54b1 of the 2 nd peripheral wall portion 54b in addition to the upper surface 54a1 of the 1 st peripheral wall portion 54 a.
The embodiment of weakening the water potential of the cleaning liquid from the cleaning liquid supply pipe is not limited to the intermediate portion 400 in the above-described embodiments 3 and 4.
In order to reduce the flow velocity of the cleaning liquid from the cleaning liquid supply pipe, a retention portion for temporarily retaining the cleaning liquid is provided between the discharge port of the cleaning liquid supply pipe 84c and the cleaning liquid discharge port 85, whereby the water potential of the cleaning liquid from the cleaning liquid supply pipe can be reduced.
In addition, in order to reduce the flow velocity of the cleaning liquid from the cleaning liquid supply pipe, a surface facing the discharge port of the cleaning liquid supply pipe 84c is provided to change the flow of the cleaning liquid, and a retention portion for temporarily retaining the cleaning liquid having changed the flow is provided, whereby the water potential of the cleaning liquid from the cleaning liquid supply pipe can be reduced.
In the above-described processing unit 16, the acid-based processing liquid is recovered and reused through the 1 st drain pipe 91a1, but the present invention is not limited thereto, and the acid-based processing liquid may not be reused. In the above description, the 1 st elevation driving unit 56b and the 2 nd elevation driving unit 57b are independent, but the present invention is not limited thereto, and the 1 st elevation driving unit 56b and the 2 nd elevation driving unit 57b may be shared, for example.
Further effects and modifications can be easily derived by those skilled in the art. Therefore, the broader aspects of the present invention are not limited to the specific details and representative embodiments described and illustrated above. Accordingly, various modifications may be made without departing from the spirit or scope of the general inventive concept as defined by the appended claims and their equivalents.

Claims (17)

1. A substrate processing apparatus is characterized in that,
it includes:
a holding section for holding a substrate;
a processing liquid supply unit configured to supply a processing liquid to the substrate;
a cup having: a bottom; a cylindrical peripheral wall portion erected from the bottom portion; a liquid receiving portion provided above the peripheral wall portion and receiving the processing liquid scattered from the substrate; and a groove portion formed on an upper surface of the peripheral wall portion along a circumferential direction, the cup surrounding the holding portion;
and a cleaning liquid supply portion for supplying a cleaning liquid to an upper surface of the peripheral wall portion,
wherein the liquid receiving portion is provided separately from the peripheral wall portion, the upper surface of the peripheral wall portion facing the liquid receiving portion,
the cup further includes: a support member that supports the liquid receiving portion and raises and lowers the liquid receiving portion with respect to the peripheral wall portion; and a through hole formed in the peripheral wall portion and through which the support member passes.
2. The substrate processing apparatus according to claim 1,
the through hole has an opening portion on an upper surface of the peripheral wall portion,
the opening is formed to overlap at least a part of the groove in a plan view.
3. The substrate processing apparatus according to claim 1 or 2,
the cleaning liquid supply portion has a cleaning liquid discharge port formed in the groove portion.
4. The substrate processing apparatus according to claim 3,
the cleaning liquid supply portion has a cleaning liquid supply path connected to the cleaning liquid discharge port,
the cleaning liquid supply path is inclined along a circumferential direction of the peripheral wall portion.
5. The substrate processing apparatus according to claim 3,
the cleaning liquid supply part is provided with a cleaning liquid supply pipe connected with a cleaning liquid supply source,
the water potential of the cleaning liquid from the cleaning liquid supply pipe is weakened between the cleaning liquid supply pipe and the cleaning liquid ejection port.
6. The substrate processing apparatus according to claim 5,
the opening area of the cleaning liquid discharge port is larger than the area of the flow path of the cleaning liquid supply pipe.
7. The substrate processing apparatus according to claim 5 or 6,
the cleaning liquid supply portion has an intermediate portion provided between the cleaning liquid supply pipe and the cleaning liquid discharge port,
the intermediate portion includes:
a base portion formed in a columnar shape;
a recess formed in a side surface of the base along a circumferential direction;
an inflow port formed in the base and connected to the cleaning liquid supply pipe;
an outlet port formed in the recess for discharging the cleaning liquid flowing into the inlet port,
the intermediate portion weakens the water potential of the cleaning liquid from the cleaning liquid supply pipe.
8. The substrate processing apparatus according to claim 1 or 2,
the peripheral wall portion has an inclined portion formed on the upper surface and inclined downward toward the groove portion.
9. The substrate processing apparatus according to claim 1 or 2,
the peripheral wall portion has an inclined portion formed on the upper surface and inclined downward toward the side surface.
10. The substrate processing apparatus according to claim 1 or 2,
the substrate processing apparatus includes a control unit for controlling the cleaning liquid supply unit and the liquid receiving unit,
the control unit supplies the cleaning liquid from the cleaning liquid supply unit in a state where the liquid receiving unit is moved to a retracted position below a processing position.
11. The substrate processing apparatus according to claim 1 or 2,
the cleaning liquid supply portion changes the flow rate of the cleaning liquid when cleaning the upper surface of the peripheral wall portion and when cleaning the lower surface of the liquid receiving portion.
12. The substrate processing apparatus according to claim 1 or 2,
the substrate processing apparatus includes a control unit for controlling the cleaning liquid supply unit and the holding unit,
the control unit supplies the cleaning liquid from the cleaning liquid supply unit while rotating the holding unit.
13. The substrate processing apparatus according to claim 12,
the cleaning liquid supply part is provided with a plurality of outlet openings with different opening directions,
the control unit supplies the cleaning liquid from the plurality of outlets of the cleaning liquid supply unit in a state where the holding unit is rotated in a predetermined direction, and then supplies the cleaning liquid from the plurality of outlets of the cleaning liquid supply unit in a state where the holding unit is rotated in a direction opposite to the predetermined direction.
14. The substrate processing apparatus according to claim 1,
the cleaning liquid supply unit includes:
a cleaning liquid discharge port formed in the groove;
a cleaning liquid supply path connected to the cleaning liquid discharge port,
the cleaning liquid supply path is inclined along a circumferential direction of the peripheral wall portion,
the cleaning liquid supply part is also provided with a cleaning liquid supply pipe connected with a cleaning liquid supply source,
the opening area of the cleaning liquid discharge port is larger than the area of the flow path of the cleaning liquid supply pipe,
a cleaning liquid retention portion is provided between the cleaning liquid supply pipe and the cleaning liquid discharge port.
15. A method for processing a substrate, characterized in that,
it includes:
a substrate holding step of holding a substrate;
a process liquid supply step of supplying a process liquid to the substrate;
a cleaning liquid supply step of supplying a cleaning liquid to an upper surface of the peripheral wall portion in a cup, the cup including: a bottom; the cylindrical peripheral wall portion that is erected from the bottom portion; a liquid receiving portion provided above the peripheral wall portion and receiving the processing liquid scattered from the substrate; and a groove portion formed on an upper surface of the peripheral wall portion along a circumferential direction, the cup surrounding a holding portion for holding the substrate,
wherein the liquid receiving portion is provided separately from the peripheral wall portion, the upper surface of the peripheral wall portion facing the liquid receiving portion,
the cup further includes: a support member that supports the liquid receiving portion and raises and lowers the liquid receiving portion with respect to the peripheral wall portion; and a through hole formed in the peripheral wall portion and through which the support member passes.
16. The substrate processing method according to claim 15,
in the cleaning liquid supply step, the cleaning liquid is supplied in a state where the liquid receiving portion is moved to the retreat position below the processing position, and then the cleaning liquid is supplied in a state where the liquid receiving portion is moved to the processing position and the holding portion is rotated in a predetermined direction.
17. The substrate processing method according to claim 16,
in the cleaning liquid supply step, the cleaning liquid is supplied while the liquid receiving portion is further held at the processing position and the holding portion is rotated in a direction opposite to the predetermined direction, and then the cleaning liquid is supplied while the liquid receiving portion is moved to the retreat position while the holding portion is held and rotated in the opposite direction.
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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6753762B2 (en) * 2015-12-28 2020-09-09 東京エレクトロン株式会社 Substrate processing equipment and substrate processing method
JP7058094B2 (en) * 2017-09-19 2022-04-21 株式会社Ｓｃｒｅｅｎホールディングス Board processing equipment and board processing method
CN109917620B (en) * 2017-12-12 2021-07-23 长鑫存储技术有限公司 Wafer stage system and exposure machine with same
US11139182B2 (en) * 2017-12-13 2021-10-05 Tokyo Electron Limited Substrate processing apparatus and substrate processing method
US20220005709A1 (en) * 2018-11-16 2022-01-06 Tokyo Electron Limited Substrate processing apparatus and method of cleaning substrate processing apparatus
JP6793761B2 (en) * 2019-01-10 2020-12-02 上村工業株式会社 Surface treatment equipment and its method
JP7345642B2 (en) * 2020-05-01 2023-09-15 東京エレクトロン株式会社 Method for cleaning cup of substrate processing equipment and substrate processing equipment
KR102523645B1 (en) * 2021-04-23 2023-04-20 에이펫(주) Substrate processing apparatus

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102629563A (en) * 2011-02-01 2012-08-08 东京毅力科创株式会社 Liquid processing apparatus and liquid processing method

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3761482B2 (en) * 2002-03-26 2006-03-29 大日本スクリーン製造株式会社 Substrate processing apparatus and splash guard cleaning method
JP2007149890A (en) * 2005-11-25 2007-06-14 Dainippon Screen Mfg Co Ltd Apparatus and method of processing substrate
JP2007149892A (en) * 2005-11-25 2007-06-14 Dainippon Screen Mfg Co Ltd Substrate processor and substrate processing method
JP2008153521A (en) * 2006-12-19 2008-07-03 Dainippon Screen Mfg Co Ltd Recovery cup cleaning method, and substrate processing apparatus
JP5401255B2 (en) * 2008-11-05 2014-01-29 東京エレクトロン株式会社 Cleaning device, cleaning method, and storage medium
JP5375871B2 (en) * 2011-04-18 2013-12-25 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and storage medium storing computer program
JP5890108B2 (en) * 2011-04-27 2016-03-22 株式会社Ｓｃｒｅｅｎホールディングス Cleaning method
JP5885989B2 (en) 2011-10-13 2016-03-16 東京エレクトロン株式会社 Liquid processing apparatus, liquid processing method, and storage medium
JP2013207265A (en) 2012-03-29 2013-10-07 Dainippon Screen Mfg Co Ltd Substrate processing apparatus
JP6229933B2 (en) * 2013-09-27 2017-11-15 株式会社Ｓｃｒｅｅｎホールディングス Processing cup cleaning method, substrate processing method, and substrate processing apparatus
JP6753762B2 (en) * 2015-12-28 2020-09-09 東京エレクトロン株式会社 Substrate processing equipment and substrate processing method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102629563A (en) * 2011-02-01 2012-08-08 东京毅力科创株式会社 Liquid processing apparatus and liquid processing method

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