CN107004636B - 通孔材料选择和处理 - Google Patents

通孔材料选择和处理 Download PDF

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Publication number
CN107004636B
CN107004636B CN201580020697.1A CN201580020697A CN107004636B CN 107004636 B CN107004636 B CN 107004636B CN 201580020697 A CN201580020697 A CN 201580020697A CN 107004636 B CN107004636 B CN 107004636B
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China
Prior art keywords
interconnect layer
conductive material
conductive
layer
semiconductor device
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CN201580020697.1A
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English (en)
Chinese (zh)
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CN107004636A (zh
Inventor
J·J·朱
J·J·徐
S·S·宋
K·利姆
Z·王
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5226—Via connections in a multilevel interconnection structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76811—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5228—Resistive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201580020697.1A 2014-05-09 2015-04-02 通孔材料选择和处理 Active CN107004636B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/274,470 US9196583B1 (en) 2014-05-09 2014-05-09 Via material selection and processing
US14/274,470 2014-05-09
PCT/US2015/024083 WO2015171223A1 (en) 2014-05-09 2015-04-02 Via material selection and processing

Publications (2)

Publication Number Publication Date
CN107004636A CN107004636A (zh) 2017-08-01
CN107004636B true CN107004636B (zh) 2020-07-28

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CN201580020697.1A Active CN107004636B (zh) 2014-05-09 2015-04-02 通孔材料选择和处理

Country Status (5)

Country Link
US (1) US9196583B1 (enExample)
EP (1) EP3140857A1 (enExample)
JP (1) JP2017516305A (enExample)
CN (1) CN107004636B (enExample)
WO (1) WO2015171223A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9620454B2 (en) * 2014-09-12 2017-04-11 Qualcomm Incorporated Middle-of-line (MOL) manufactured integrated circuits (ICs) employing local interconnects of metal lines using an elongated via, and related methods
US9793212B2 (en) 2015-04-16 2017-10-17 Taiwan Semiconductor Manufacturing Company, Ltd. Interconnect structures and methods of forming same
US11069609B2 (en) 2017-11-03 2021-07-20 Intel Corporation Techniques for forming vias and other interconnects for integrated circuit structures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261960B1 (en) * 2000-04-06 2001-07-17 Advanced Micro Devices, Inc High density contacts having rectangular cross-section for dual damascene applications
CN102231361A (zh) * 2006-12-29 2011-11-02 半导体元件工业有限责任公司 半导体部件及其制造方法

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KR950010858B1 (ko) * 1992-10-20 1995-09-25 현대전자산업주식회사 반도체 소자의 금속콘택 형성방법
JP3175705B2 (ja) * 1998-09-18 2001-06-11 日本電気株式会社 不揮発性半導体記憶装置の製造方法
US6974766B1 (en) 1998-10-01 2005-12-13 Applied Materials, Inc. In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application
JP3895126B2 (ja) * 2001-04-23 2007-03-22 株式会社東芝 半導体装置の製造方法
AU2003292827A1 (en) * 2002-12-27 2004-07-29 Fujitsu Limited Semiconductor device, dram integrated circuit device, and its manufacturing method
US20050285269A1 (en) 2004-06-29 2005-12-29 Yang Cao Substantially void free interconnect formation
US7160772B2 (en) 2005-02-23 2007-01-09 International Business Machines Corporation Structure and method for integrating MIM capacitor in BEOL wiring levels
US7863188B2 (en) * 2005-07-29 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US20070218685A1 (en) 2006-03-17 2007-09-20 Swaminathan Sivakumar Method of forming trench contacts for MOS transistors
US7767570B2 (en) * 2006-03-22 2010-08-03 Taiwan Semiconductor Manufacturing Company, Ltd. Dummy vias for damascene process
US8089160B2 (en) * 2007-12-12 2012-01-03 International Business Machines Corporation IC interconnect for high current
JP5554951B2 (ja) 2008-09-11 2014-07-23 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2010087350A (ja) * 2008-10-01 2010-04-15 Fujitsu Microelectronics Ltd 半導体装置とその製造方法
US7999320B2 (en) 2008-12-23 2011-08-16 International Business Machines Corporation SOI radio frequency switch with enhanced signal fidelity and electrical isolation
US7843005B2 (en) 2009-02-11 2010-11-30 International Business Machines Corporation SOI radio frequency switch with reduced signal distortion
US8133774B2 (en) 2009-03-26 2012-03-13 International Business Machines Corporation SOI radio frequency switch with enhanced electrical isolation
US8796855B2 (en) * 2012-01-13 2014-08-05 Freescale Semiconductor, Inc. Semiconductor devices with nonconductive vias
US9355956B2 (en) * 2013-11-01 2016-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Inductor for semiconductor integrated circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6261960B1 (en) * 2000-04-06 2001-07-17 Advanced Micro Devices, Inc High density contacts having rectangular cross-section for dual damascene applications
CN102231361A (zh) * 2006-12-29 2011-11-02 半导体元件工业有限责任公司 半导体部件及其制造方法

Also Published As

Publication number Publication date
US20150325515A1 (en) 2015-11-12
JP2017516305A (ja) 2017-06-15
WO2015171223A1 (en) 2015-11-12
US9196583B1 (en) 2015-11-24
EP3140857A1 (en) 2017-03-15
CN107004636A (zh) 2017-08-01

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