CN106997156B - 在高弧度三维立体上制备高精度线路图形的曝光方法 - Google Patents
在高弧度三维立体上制备高精度线路图形的曝光方法 Download PDFInfo
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- CN106997156B CN106997156B CN201710187825.2A CN201710187825A CN106997156B CN 106997156 B CN106997156 B CN 106997156B CN 201710187825 A CN201710187825 A CN 201710187825A CN 106997156 B CN106997156 B CN 106997156B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/24—Curved surfaces
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70416—2.5D lithography
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- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
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CN201710187825.2A CN106997156B (zh) | 2017-03-27 | 2017-03-27 | 在高弧度三维立体上制备高精度线路图形的曝光方法 |
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CN201710187825.2A CN106997156B (zh) | 2017-03-27 | 2017-03-27 | 在高弧度三维立体上制备高精度线路图形的曝光方法 |
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CN106997156A CN106997156A (zh) | 2017-08-01 |
CN106997156B true CN106997156B (zh) | 2018-11-06 |
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CN201710187825.2A Active CN106997156B (zh) | 2017-03-27 | 2017-03-27 | 在高弧度三维立体上制备高精度线路图形的曝光方法 |
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Families Citing this family (8)
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CN107999967B (zh) * | 2017-11-30 | 2019-05-31 | 华中科技大学 | 一种大型三维零件表面并行激光刻蚀加工方法和装置 |
CN108319113B (zh) * | 2018-01-31 | 2021-01-08 | 宁波大学 | 一种玻璃毛细管中加工微结构的变形矫正方法 |
CN109143792A (zh) * | 2018-09-03 | 2019-01-04 | 中山新诺科技股份有限公司 | 一种空心柱立体结构的图形加工方法 |
CN110125551B (zh) * | 2019-05-22 | 2024-06-18 | 武汉华工激光工程有限责任公司 | 一种大弧度深内壁环形打标的3d激光打标装置及方法 |
CN110032011B (zh) * | 2019-05-30 | 2022-08-19 | 京东方科技集团股份有限公司 | 一种狭缝电极的曝光方法 |
CN110333648A (zh) * | 2019-07-16 | 2019-10-15 | 中山新诺科技股份有限公司 | 在三维多面体上制备高精度线路图形的曝光系统及方法 |
CN110568721A (zh) * | 2019-09-12 | 2019-12-13 | Oppo广东移动通信有限公司 | 玻璃盖板的制作方法、玻璃盖板及移动终端 |
CN113029030B (zh) * | 2021-03-23 | 2023-03-14 | 深圳市梯易易智能科技有限公司 | 一种3d玻璃的曲面成像方法及装置 |
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US6251550B1 (en) * | 1998-07-10 | 2001-06-26 | Ball Semiconductor, Inc. | Maskless photolithography system that digitally shifts mask data responsive to alignment data |
CN101169595A (zh) * | 2007-11-28 | 2008-04-30 | 上海微电子装备有限公司 | 一种用于步进光刻机对准系统的标定装置及其标定方法 |
CN103578930A (zh) * | 2012-07-20 | 2014-02-12 | 中芯国际集成电路制造(上海)有限公司 | 多重图形化的掩膜层的形成方法、半导体结构 |
CN103616978A (zh) * | 2013-12-05 | 2014-03-05 | 中山新诺科技有限公司 | 一种拼贴法制备单片集成电容触摸屏的小片定位、直接成像系统 |
CN105684126A (zh) * | 2013-10-22 | 2016-06-15 | 应用材料公司 | 具有主动对准的卷对卷无掩模光刻 |
CN106200278A (zh) * | 2016-09-18 | 2016-12-07 | 中国科学院上海光学精密机械研究所 | 基于无掩膜光刻机极坐标下刻写大范围任意图形的方法 |
CN106502059A (zh) * | 2016-12-30 | 2017-03-15 | 俞庆平 | 一种适用于曲面手机玻璃的直写曝光系统及方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6855482B2 (en) * | 2002-04-09 | 2005-02-15 | Day International, Inc. | Liquid transfer articles and method for producing the same using digital imaging photopolymerization |
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2017
- 2017-03-27 CN CN201710187825.2A patent/CN106997156B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6251550B1 (en) * | 1998-07-10 | 2001-06-26 | Ball Semiconductor, Inc. | Maskless photolithography system that digitally shifts mask data responsive to alignment data |
CN101169595A (zh) * | 2007-11-28 | 2008-04-30 | 上海微电子装备有限公司 | 一种用于步进光刻机对准系统的标定装置及其标定方法 |
CN103578930A (zh) * | 2012-07-20 | 2014-02-12 | 中芯国际集成电路制造(上海)有限公司 | 多重图形化的掩膜层的形成方法、半导体结构 |
CN105684126A (zh) * | 2013-10-22 | 2016-06-15 | 应用材料公司 | 具有主动对准的卷对卷无掩模光刻 |
CN103616978A (zh) * | 2013-12-05 | 2014-03-05 | 中山新诺科技有限公司 | 一种拼贴法制备单片集成电容触摸屏的小片定位、直接成像系统 |
CN106200278A (zh) * | 2016-09-18 | 2016-12-07 | 中国科学院上海光学精密机械研究所 | 基于无掩膜光刻机极坐标下刻写大范围任意图形的方法 |
CN106502059A (zh) * | 2016-12-30 | 2017-03-15 | 俞庆平 | 一种适用于曲面手机玻璃的直写曝光系统及方法 |
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Denomination of invention: Exposure method for preparing high-precision circuit graphics on high radian three-dimensional stereo Effective date of registration: 20210901 Granted publication date: 20181106 Pledgee: Bank of Jiangsu Limited by Share Ltd. Hangzhou branch Pledgor: Hangzhou Xinnuo Microelectronics Co.,Ltd. Registration number: Y2021330001333 |
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