CN106981514A - The enhanced GaN transistor device of notched gates based on nano-channel - Google Patents
The enhanced GaN transistor device of notched gates based on nano-channel Download PDFInfo
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- 239000002090 nanochannel Substances 0.000 title claims abstract description 63
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 47
- 238000005036 potential barrier Methods 0.000 claims abstract description 21
- 238000002161 passivation Methods 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 240000007594 Oryza sativa Species 0.000 claims description 2
- 235000007164 Oryza sativa Nutrition 0.000 claims description 2
- 235000009566 rice Nutrition 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 7
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
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- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
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Abstract
The invention discloses a kind of enhanced GaN transistor device of notched gates based on nano-channel, it is related to technical field of microelectronic devices, from bottom to top including substrate layer, GaN cushions, AlGaN potential barrier, gate dielectric layer, passivation layer, source electrode, drain electrode and gate electrode；Hetero-junctions below AlGaN/GaN HEMT devices gate electrodes is etched to form nano-channel, then two-dimensional electron gas is not present in nano-channel two side areas, gate electrode is wrapped in the top and two side of nano-channel, because gate electrode is modulated from three directions to the electronics in raceway groove, grid-control ability is strong, can suppress short channel effect well.When the width very little of nano-channel, the two-dimensional electron gas in raceway groove is depleted, and device is realized enhanced.Using notched gates structure, nano-channel and notched gates collective effect, it is ensured that device has larger nano-channel width while realizing enhanced reduce conducting resistance.
Description
Technical field
The present invention relates to technical field of microelectronic devices, more particularly to a kind of notched gates based on nano-channel are enhanced
GaN transistor device.
Background technology
Semiconductor material with wide forbidden band GaN have high critical breakdown electric field, high electron saturation velocities, good heat endurance with
And the advantages of stronger capability of resistance to radiation, particularly AlGaN/GaN heterogeneous structure materials are imitated due to piezoelectricity and spontaneous polarization
Should have high two-dimensional electron gas and electron mobility, it is considered to be prepare high temperature resistant, radioresistance, high-frequency high-power micro-
The excellent material of wave power device and high speed, high voltage electric switch device and radioresistance high-speed digital circuit.
Due to the presence of polarity effect, AlGaN/GaN HEMTs are usually depletion device, prepare and increase
Strong type device is relatively difficult, and progress is very slow.The application of depletion device has limitation.First, in radio-frequency power
Application aspect, depletion device must use negative voltage bias grid, it is desirable to design independent power-supply system.Secondly, in electric power
In terms of switch application, in order to ensure the overall security of system, depletion device also requires the operation of back bias voltage system prior to electricity
Source is powered.In addition, in high-speed digital circuit application aspect, enhancement device is the indispensable element for constituting phase inverter, and phase inverter
It is the core cell for constituting complex digital system.Therefore, develop the enhanced GaN transistor of high reliability have it is extremely important
Meaning.
At present, a kind of Research Thinking in the world for enhanced GaN device is, by square grooving under the gate electrode, to make grid
Raceway groove two-dimensional electron gas below pole exhausts, and raceway groove remainder two-dimensional electron gas is constant, so as to realize enhancement device.
But, with the continuous diminution of device size, grid length is shorter and shorter, the HEMT of conventional planar structure it is short
Ditch effect is more and more obvious.2013, Ki-Sik Im et al. prepared the enhanced AlGaN of single nano-channel/
GaNMISFET, threshold voltage is 2.1V, and the device architecture uses common grid structure, in order to realize enhancement device, nano-channel
Width is only 50nm, and nano-channel two ends extend to source-drain electrode area, and therefore, device on-resistance is larger.
The content of the invention
The technical problem to be solved in the present invention is for above-mentioned the deficiencies in the prior art there is provided a kind of based on nano-channel
The enhanced GaN transistor device of notched gates, the transistor has that grid-control ability is strong, can suppress short channel effect, realize device
The characteristics of enhanced and conducting resistance is small.
In order to solve the above technical problems, the technical solution used in the present invention is：A kind of notched gates based on nano-channel
Enhanced GaN transistor device, from bottom to top including substrate layer, GaN cushions, AlGaN potential barrier, gate dielectric layer, passivation layer,
Source electrode, drain electrode and gate electrode；It is characterized in that：The AlGaN potential barrier and GaN cushions formation AlGaN/GaN
Fluted above hetero-junctions, the AlGaN potential barrier, gate electrode is located in groove and is wrapped in AlGaN/GaN hetero-junctions
Top and both sides, form three-dimensional gate-all-around structure；AlGaN/GaN hetero-junctions under the gate electrode has nano graph, and formation is received
Rice raceway groove；The nano-channel two ends have raceway groove expansion area；The gate dielectric layer is located under the gate electrode, the source electricity
Between pole and the drain electrode, two side walls of the nano-channel are covered at the top of the AlGaN/GaN hetero-junctions and wrapped up.
Preferably, the substrate layer is sapphire, SiC or GaN.
Preferably, the GaN buffer layer thicknesses are 0.5-2.5um.
Preferably, the AlGaN potential barrier thickness is 10-20nm, and wherein Al content is 15%-30%.
Preferably, the number n of the nano-channel is n >=1, length LchFor 0<Lch<The spacing of source electrode and drain electrode,
Width WchFor 10-200nm.
Preferably, the bottom portion of groove in the AlGaN potential barrier and the AlGaN/GaN hetero-junctions apart from Dch1For 0-
15nm, the nano-channel bottom is with the AlGaN/GaN hetero-junctions apart from Dch2For 0-150nm.
Preferably, the gate dielectric layer is SiN, Al2O3、SiO2Or the stacked structure of medium layer, thickness is 1-
15nm。
Preferably, the passivation layer is SiN, Al2O3、SiO2Or the stacked structure of a variety of passivation layers, thickness is 50-
150nm。
Preferably, the gate electrode is straight grid or T-shaped grid, grid length Lg=LchOr Lg>LchOr Lg<Lch。
Preferably, the source electrode and electric leakage extremely Ohmic contact, on the raceway groove expansion area at nano-channel two ends.
It is using the beneficial effect produced by above-mentioned technical proposal：By AlGaN/GaN HEMT devices
Hetero-junctions below part gate electrode etches to form nano-channel, then two-dimensional electron gas, grid electricity is not present in nano-channel two side areas
Pole is wrapped in the top and two side of nano-channel, because gate electrode is modulated from three directions to the electronics in raceway groove, grid
Control ability is stronger, can suppress short channel effect well.When the width very little of nano-channel, the two-dimensional electron gas quilt in raceway groove
Exhaust, device is realized enhanced.Using notched gates structure, nano-channel and notched gates collective effect, it is ensured that device is in reality
There is larger nano-channel width while existing enhanced, reduce conducting resistance.Nano-channel two ends have expansion area, can enter
One step reduces conducting resistance, improves device frequency.
Brief description of the drawings
Fig. 1 is the integrally-built top view of the embodiment of the present invention one.
Fig. 2 is the sectional view in Figure 1A-A faces.
Fig. 3 is the sectional view in Figure 1B-B faces.
Fig. 4 is the sectional view in Fig. 1 C-C faces.
Fig. 5 is the integrally-built top view of the embodiment of the present invention two.
Fig. 6 is the integrally-built top view of the embodiment of the present invention three.
Fig. 7 is the integrally-built sectional view of the embodiment of the present invention four.
In figure：1st, source electrode；2nd, drain electrode；3rd, gate electrode；4th, raceway groove expansion area；5th, nano-channel；6th, substrate layer；7、
GaN cushions；8th, AlGaN potential barrier；9th, gate dielectric layer；10th, passivation layer.
Embodiment
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
As shown in Figure 1, Figure 2, Figure 3 and Figure 4, device of the present invention include substrate layer 6, GaN cushions 7, AlGaN potential barrier 8,
Gate dielectric layer 9, passivation layer 10, source electrode 1, drain electrode 2 and gate electrode 3.Wherein orlop is using sapphire, SiC or GaN
Substrate layer 6；Substrate layer 6 is above GaN cushions 7；It is AlGaN potential barrier 8 above cushion；AlGaN potential barrier 8 and GaN are slow
The formation AlGaN/GaN hetero-junctions of layer 7 is rushed, the top of AlGaN potential barrier 8 is fluted, and gate electrode 3 is located in groove, and is wrapped in different
The top and both sides of matter knot, form three-dimensional gate-all-around structure；AlGaN/GaN hetero-junctions under gate electrode 3 has nano graph, is formed
Nano-channel 5；The two ends of nano-channel 5 have raceway groove expansion area 4；Gate dielectric layer 9 be located at AlGaN potential barrier 8 and gate electrode 3 it
Between, it is covered at the top of AlGaN/GaN hetero-junctions and wraps up two side walls of nano-channel 5；Source electrode 1 and the difference of drain electrode 2 position
On the expansion area 4 of nano-channel 5；Passivation layer 10 is covered in the surface of whole device.
With reference to the accompanying drawings, the present invention is described in further detail in conjunction with specific embodiments.
Embodiment one：The enhanced GaN transistor device of notched gates based on single nano-channel.
Fig. 1 is the integrally-built top view of the embodiment of the present invention one, and Fig. 2, Fig. 3 and Fig. 4 are A-A faces, B-B in Fig. 1 respectively
Face and the sectional view in C-C faces.The enhanced GaN transistor device of notched gates of the present embodiment based on single nano-channel 5 is from bottom to top
Including substrate layer 6, GaN cushions 7, AlGaN potential barrier 8, gate dielectric layer 9, passivation layer 10 and source electrode 1, drain electrode 2 and grid electricity
Pole 3.
Substrate layer 6 is sapphire, SiC or GaN using material.
Substrate layer 6 is the GaN cushions 7 that thickness is 0.5-2.5 μm above.
It is that thickness is the AlGaN potential barrier 8 that 10-20nm and Al components are 15%~30% above cushion.
AlGaN potential barrier 8 and the formation AlGaN/GaN hetero-junctions of GaN cushions 7, fluted, the grid in the top of AlGaN potential barrier 8
Electrode 3 is located in groove, and is wrapped in the top and both sides of hetero-junctions, forms three-dimensional gate-all-around structure.Wherein described grid recess bottom
Portion is with AlGaN/GaN hetero-junctions apart from Dch1For 0-15nm.
AlGaN/GaN hetero-junctions under gate electrode 3 has nano graph, nano-channel 5 is formed, wherein the nano-channel
5 number n is n=1, length LchFor LchThe length L of=gate electrode 3g；The width W of nano-channel 5chFor 10-200nm, the bottom of nano-channel 5
Portion is with AlGaN/GaN hetero-junctions apart from Dch2For 0-150nm.
The two ends of nano-channel 5 have raceway groove expansion area 4.
Gate dielectric layer 9 is located between AlGaN potential barrier 8 and gate electrode 3, is covered at the top of AlGaN/GaN hetero-junctions and wraps
Two side walls of nano-channel 5 are wrapped up in, gate dielectric layer 9 uses SiN, Al2O3、SiO2Or the stacked structure of medium layer, thickness is
1-15nm。
Passivation layer 10 is located at the surface of the whole device in addition to electrode, and passivation layer 10 uses SiN, Al2O3、SiO2Or it is a variety of
The stacked structure of passivation layer 10, thickness is 50-150nm.
Source electrode 1 and drain electrode 2 are Ohmic contact, on the raceway groove expansion area 4 at the two ends of nano-channel 5.
Embodiment two：The enhanced GaN transistor device of notched gates based on single nano-channel.
As shown in figure 5, the enhanced GaN transistor device of the notched gates based on single nano-channel 5 of the present embodiment have with
The identical structure of embodiment one, but the length L of the nano-channel 5chFor Lch>The long L of gridg。
Embodiment three：The enhanced GaN transistor device of notched gates based on many nano-channels.
As shown in fig. 6, the enhanced GaN transistor device of the notched gates based on many nano-channels of the present embodiment has and reality
The identical structure of example one is applied, but the number n of the nano-channel 5 is n>1.
Example IV：The enhanced GaN transistor device of T-shaped notched gates based on single nano-channel.
As shown in fig. 7, the enhanced GaN transistor device of the T-shaped notched gates based on single nano-channel 5 of the present embodiment has
With the identical structure of embodiment one, but gate electrode 3 use T-shaped grid structure.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
Any modifications, equivalent substitutions and improvements made within refreshing and principle etc., should be included in the scope of the protection.
Claims (10)
1. the enhanced GaN transistor device of a kind of notched gates based on nano-channel, from bottom to top including substrate layer（6）, GaN delay
Rush layer（7）, AlGaN potential barrier（8）, gate dielectric layer（9）, passivation layer（10）, source electrode（1）, drain electrode（2）And gate electrode（3）；
It is characterized in that：The AlGaN potential barrier（8）With the GaN cushions（7）Form AlGaN/GaN hetero-junctions, the AlGaN
Barrier layer（8）Top is fluted, gate electrode（3）In groove and it is wrapped in the top and both sides of AlGaN/GaN hetero-junctions,
Form three-dimensional gate-all-around structure；The gate electrode（3）Under AlGaN/GaN hetero-junctions there is nano graph, form nano-channel
（5）；The nano-channel（5）Two ends have raceway groove expansion area（4）；The gate dielectric layer（9）Positioned at the gate electrode（3）It
Under, the source electrode（1）With the drain electrode（2）Between, it is covered at the top of the AlGaN/GaN hetero-junctions and is received described in parcel
Rice raceway groove（5）Two side walls.
2. the enhanced GaN transistor device of the notched gates according to claim 1 based on nano-channel, it is characterised in that：
The substrate layer（6）For sapphire, SiC or GaN.
3. the enhanced GaN transistor device of the notched gates according to claim 1 based on nano-channel, it is characterised in that：
The GaN cushions（7）Thickness is 0.5-2.5um.
4. the enhanced GaN transistor device of the notched gates according to claim 1 based on nano-channel, it is characterised in that：
The AlGaN potential barrier（8）Thickness is 10-20nm, and wherein Al content is 15%-30%.
5. the enhanced GaN transistor device of the notched gates according to claim 1 based on nano-channel, it is characterised in that：
The nano-channel（5）Number n be n >=1, length LchFor 0<Lch<Source electrode（1）And drain electrode（2）Spacing, width Wch
For 10-200nm.
6. the enhanced GaN transistor device of the notched gates according to claim 1 based on nano-channel, it is characterised in that：
The AlGaN potential barrier（8）On bottom portion of groove and the AlGaN/GaN hetero-junctions apart from Dch1For 0-15nm, the nanometer
Raceway groove（5）Bottom is with the AlGaN/GaN hetero-junctions apart from Dch2For 0-150nm.
7. the enhanced GaN transistor device of the notched gates according to claim 1 based on nano-channel, it is characterised in that：
The gate dielectric layer（9）For SiN, Al2O3、SiO2Or the stacked structure of medium layer, thickness is 1-15nm.
8. the enhanced GaN transistor device of the notched gates according to claim 1 based on nano-channel, it is characterised in that：
The passivation layer（10）For SiN, Al2O3、SiO2Or a variety of passivation layers（10）Stacked structure, thickness is 50-150nm.
9. the enhanced GaN transistor device of the notched gates according to claim 1 based on nano-channel, it is characterised in that：
The gate electrode（3）For straight grid or T-shaped grid, grid length Lg=LchOr Lg>LchOr Lg<Lch。
10. the enhanced GaN transistor device of the notched gates according to claim 1 based on nano-channel, it is characterised in that：
The source electrode（1）And drain electrode（2）For Ohmic contact, positioned at nano-channel（5）The raceway groove expansion area at two ends（4）On.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107919397A (en) * | 2017-11-20 | 2018-04-17 | 西安电子科技大学 | A kind of High Linear FET device and preparation method thereof |
| CN108470768A (en) * | 2018-03-02 | 2018-08-31 | 华南理工大学 | A kind of preparation method of HEMT device nanometer gate |
| CN108666216A (en) * | 2018-05-15 | 2018-10-16 | 西安电子科技大学 | HEMT device and preparation method thereof based on overlayer passivation structure |
| US11349003B2 (en) * | 2019-05-15 | 2022-05-31 | Cambridge Electronics, Inc. | Transistor structure with a stress layer |
| CN114843187A (en) * | 2021-02-02 | 2022-08-02 | 北京大学 | Preparation method of GaN-based multi-nano-channel high-electron-mobility transistor |
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| CN108666216B (en) * | 2018-05-15 | 2021-05-07 | 西安电子科技大学 | HEMT device based on laminated passivation structure and preparation method thereof |
| US11349003B2 (en) * | 2019-05-15 | 2022-05-31 | Cambridge Electronics, Inc. | Transistor structure with a stress layer |
| CN114843187A (en) * | 2021-02-02 | 2022-08-02 | 北京大学 | Preparation method of GaN-based multi-nano-channel high-electron-mobility transistor |
| CN114843187B (en) * | 2021-02-02 | 2024-05-17 | 北京大学 | Preparation method of GaN-based nano-channel high electron mobility transistor |
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