CN106981496A - Output amplifier and preparation method for frame transfer Visible-light CCD - Google Patents
Output amplifier and preparation method for frame transfer Visible-light CCD Download PDFInfo
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- CN106981496A CN106981496A CN201710216550.0A CN201710216550A CN106981496A CN 106981496 A CN106981496 A CN 106981496A CN 201710216550 A CN201710216550 A CN 201710216550A CN 106981496 A CN106981496 A CN 106981496A
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- 238000012546 transfer Methods 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 62
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 51
- 230000004888 barrier function Effects 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 229920005591 polysilicon Polymers 0.000 claims abstract description 22
- 238000005516 engineering process Methods 0.000 claims description 14
- 239000004411 aluminium Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 5
- 238000005247 gettering Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012797 qualification Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000009194 climbing Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/1485—Frame transfer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a kind of output amplifier for frame transfer Visible-light CCD, the output amplifier is made up of substrate layer, two source-drain areas, three gate mediums, source and drain polysilicon electrode, three phosphorosilicate glass layers, barrier layer, metallic aluminum and ground；The invention also discloses the preparation method of foregoing output amplifier；The method have the benefit that：A kind of output amplifier and preparation method for frame transfer Visible-light CCD is proposed, the program can effectively improve the quality of frame transfer Visible-light CCD.
Description
Technical field
The present invention relates to a kind of CCD technologies, more particularly to a kind of output amplifier and system for frame transfer Visible-light CCD
Make method.
Background technology
Frame transfer Visible-light CCD is the amplifier one on a kind of important CCD type, common frame transfer Visible-light CCD
As be made up of substrate layer, two source-drain areas, three gate mediums, source and drain polysilicon electrode, metallic aluminum and ground, its structure such as Fig. 2
Shown, there is the following problem in prior art when making：1) prior art is typically formed using thermal diffusion doping process
Source-drain area and ground, the characteristic based on thermal diffusion doping process understand that the longitudinal diffusion speed of thermal diffusion doping process expands with horizontal
Dissipate speed almost identical, when the amplification long size of grid is smaller, is easily caused Punchthrough, amplifier is failed, making grid
, it is necessary to which designing some in the amplifier prevents the structure of Punchthrough during the less amplifier of long size, grid are considerably increased long
The manufacture difficulty of the less amplifier of size；2) prior art is general to be existed using wet corrosion technique when making metallic aluminum
Electrode is etched on metallic aluminum, the operational characteristic based on wet corrosion technique is understood, the longitudinal direction corrosion speed of wet corrosion technique
Rate is almost identical with lateral encroaching speed, downwards during corrosion metallic aluminum, although have the protection of photoresist, but corrosive liquid in transverse direction
Also lateral encroaching can be carried out so that the metallic aluminum narrowed thickness at stepped locations, because metallic aluminum is typically using evaporation work
Skill is formed, at the stepped locations on device, is empty below the metallic aluminum at step chamfering, corrosive liquid is easily infiltrated into
Metallic aluminum is occurred broken strip at stepped locations, make the direct current reliability of device be difficult to be guaranteed；3) metallic aluminum is direct
Contacted with silicon materials, because aluminium spreads soon in silicon, readily diffuse into PN junction position, particularly shallow junction PN junction, easy occurring source
Junction spiking is leaked, causes PN junction to fail, so as to cause CCD to be imaged, causes component failure to be scrapped.
The content of the invention
The problem of in background technology, the present invention proposes a kind of output amplifier for frame transfer Visible-light CCD,
Its innovation is：The output amplifier is by substrate layer, two source-drain areas, three gate mediums, source and drain polysilicon electrode, three phosphorus
Silica glass layer, barrier layer, metallic aluminum and ground composition；The source-drain area formation is in the top layer on the upside of substrate layer, two source and drain
Spaced apart between area, the source-drain area positioned at left side is designated as left source-drain area, and the source-drain area positioned at right side is designated as right source-drain area；
The gate medium formation is on the upper surface of substrate layer；First gate medium is located at the left side of left source-drain area, the right side of the first gate medium
Hold and cover the left end of left source-drain area；Second gate medium is located between left source-drain area and right source-drain area, the left end of the second gate medium
The right-hand member of left source-drain area is covered, the right-hand member of the second gate medium covers the left end of right source-drain area, the first gate medium and second gate
It is spaced between medium；3rd gate medium is located at the right of right source-drain area, and the left end of the 3rd gate medium is by the right side of right source-drain area
End covering, it is spaced between the second gate medium and the 3rd gate medium；The source and drain polysilicon electrode is layered in second gate medium
Upper surface middle part；First phosphorosilicate glass layer is layered on the upper surface of the first gate medium；Second phosphorosilicate glass layer is layered in
On the upper surface of two gate mediums, source and drain polysilicon electrode is wrapped in interior by the second phosphorosilicate glass layer；3rd phosphorosilicate glass layer stackup
On the upper surface of the 3rd gate medium；The barrier layer covers the exposed part of source-drain area, gate medium and phosphorosilicate glass layer；Institute
Metallic aluminum is stated to be covered on the outer surface on barrier layer；Formed describedly in the periphery of substrate layer.
The principle of aforementioned schemes is：The problem of existing for the output amplifier of existing frame transfer Visible-light CCD, this hair
Bright to propose a kind of new output amplifier structure, in this structure, inventor is provided with phosphorus silicon glass on three gate mediums
Glass layer, wherein, in source and drain polysilicon electrode is wrapped in by the second phosphorosilicate glass layer, there is provided after phosphorosilicate glass layer, can be effective
Improve stepped locations at body structure surface smoothness, improve surface metal climbing capacity, in addition, phosphorosilicate glass layer be conducive to it is miscellaneous
The suction of matter, the particularly suction to sodium ion, can effectively improve functional reliability of the device in wet environment；Meanwhile,
Also barrier layer has been provided below in metallic aluminum in inventor, is isolated metallic aluminum with rectangular structure with barrier layer, barrier layer
It is possible to prevente effectively from metallic aluminum causes to puncture to lower section silicon structure, device yield is improved.
Based on aforementioned schemes, the invention also provides following preferred scheme：The barrier layer is by the first titanium for stacking gradually
Layer, titanium nitride layer and the second titanium layer are constituted.In early-stage Study, inventor employs the double-decker of titanium nitride layer and titanium layer
Barrier layer (titanium nitride layer upper, titanium layer is under), finds that metallic aluminum has aliquation phenomenon in scribing, is found through analysis, risen
Layer phenomenon is due to that the tack between aluminium and titanium nitride is poor, and under the stress in scribing, aliquation occurs in aluminium, by many
Secondary experiment is found, then increases by one first titanium layer in metallic aluminum and titanium nitride layer, can effectively improve metallic aluminum and lower floor's knot
, there is aluminium aliquation situation in the tack of structure when can be prevented effectively from scribing.
Based on aforementioned structure, the invention also provides a kind of making of the output amplifier for frame transfer Visible-light CCD
Method, the structure of the output amplifier is as it was previously stated, specific preparation method is：
1) substrate layer is provided；
2) make ground；
3) source-drain area is made；
4) gate medium is made；
5) polysilicon electrode is made；
6) phosphorosilicate glass layer is made；
7) surface gettering is handled；
8) barrier layer is made；
9) metallic aluminum is made；
Step 2) make ground during, be doped using ion implantation technology；Step 3) make source-drain area process
In, it is doped using ion implantation technology；Step 6) in, first in structure surface deposition phosphorosilicate glass, then to phosphorus silicon glass
Glass performs etching to form three phosphorosilicate glass layers, when performing etching phosphorosilicate glass layer, the quarter between adjacent phosphorosilicate glass layer
The width of pit is up big and down small；Step 9) in, first in structure surface deposition metallic aluminium, then using dry plasma etch pair
Metallic aluminium performs etching to form metallic aluminum.
From the point of view of overall technological process, preceding method is roughly the same with existing process, and innovative point therein has：1st, make
During ground and source-drain area, employ ion implantation technology and be doped, understood based on prior art, ion implantation technology
Concentration and junction depth control accuracy it is all higher, and almost without horizontal proliferation, can effectively solve described in background technology 1)
Point problem, in addition, the operating efficiency of ion implantation technology is also higher, can effectively improve production efficiency；2nd, phosphorus silicon glass is added
Glass layer making step, makes the purpose of phosphorosilicate glass layer as previously described；3rd, surface gettering process step is added, gettering processing can
So that the heavy metal ion such as Fe, Ni, Cu, the Cr that may be introduced in technical process are drawn into nucleated areas, so as to reduce CCD products
Dark current；When the 4th, being performed etching to phosphorosilicate glass layer, make the width of etched hole between adjacent phosphorosilicate glass layer up big and down small,
A kind of " the rim of a bowl " structure is formed, so as to reduce the gradient of surface texture, is conducive to contact of the metal with hole, reduces climbing for metallic aluminium
Slope difficulty and contact resistance；5th, barrier layer making step is added, its purpose is as previously described；When the 6th, making metallic aluminum, use
Dry plasma etch is performed etching to metallic aluminium, and dry plasma etch is it is possible to prevente effectively from there is broken strip situation, it is ensured that device
Part quality.
Experiment proves that, compared with existing processing technology, after the structure and manufacture craft of the present invention, the direct current of product
Qualification rate, to more than 95%, exchanges qualification rate by original 70% or so lifting, namely product be imaged zero defect qualification rate from
20% or so lifting originally is improved more than 3 times to 70% or so, and the dark current of product is reduced close to 1 times, in the batch of product
Stability and uniformity are better than original product between batch.
The method have the benefit that：Propose a kind of output amplifier and system for frame transfer Visible-light CCD
Make method, the program can effectively improve the quality of frame transfer Visible-light CCD.
Brief description of the drawings
Fig. 1, the present invention structural representation；
Fig. 2, prior art structural representation；
The corresponding title of the mark of each in figure is respectively：Substrate layer 1, source-drain area 2, gate medium 3, source and drain polysilicon electrode
4th, phosphorosilicate glass layer 5, barrier layer 6, metallic aluminum 7.
Embodiment
A kind of output amplifier for frame transfer Visible-light CCD, its innovation is：The output amplifier is by substrate layer
1st, two source-drain areas 2, three gate mediums 3, source and drain polysilicon electrode 4, three phosphorosilicate glass layers 5, barrier layer 6, and of metallic aluminum 7
Ground is constituted；The source-drain area 2 is formed in the top layer in the upside of substrate layer 1, spaced apart between two source-drain areas 2, is located at
The source-drain area 2 in left side is designated as left source-drain area, and the source-drain area 2 positioned at right side is designated as right source-drain area；The gate medium 3 is formed in substrate
On the upper surface of layer 1；First gate medium 3 is located at the left side of left source-drain area, and the right-hand member of the first gate medium 3 is by the left end of left source-drain area
Covering；Second gate medium 3 is located between left source-drain area and right source-drain area, and the left end of the second gate medium 3 is by the right-hand member of left source-drain area
Covering, the right-hand member of the second gate medium 3 covers the left end of right source-drain area, between being left between the first gate medium 3 and the second gate medium 3
Every；3rd gate medium 3 is located at the right of right source-drain area, and the left end of the 3rd gate medium 3 covers the right-hand member of right source-drain area, second gate
It is spaced between the gate medium 3 of medium 3 and the 3rd；The source and drain polysilicon electrode 4 is layered in the upper surface of the second gate medium 3
Portion；First phosphorosilicate glass layer 5 is layered on the upper surface of the first gate medium 3；Second phosphorosilicate glass layer 5 is layered in the second gate medium
On 3 upper surface, source and drain polysilicon electrode 4 is wrapped in interior by the second phosphorosilicate glass layer 5；3rd phosphorosilicate glass layer 5 is layered in
On the upper surface of three gate mediums 3；The barrier layer 6 covers the exposed part of source-drain area 2, gate medium 3 and phosphorosilicate glass layer 5；
The metallic aluminum 7 is covered on the outer surface on barrier layer 6；The periphery in substrate layer 1 is formed describedly.
Further, the barrier layer 6 is made up of the first titanium layer, titanium nitride layer and the second titanium layer stacked gradually.
A kind of preparation method of output amplifier for frame transfer Visible-light CCD, the output amplifier is by substrate layer
1st, two source-drain areas 2, three gate mediums 3, source and drain polysilicon electrode 4, three phosphorosilicate glass layers 5, barrier layer 6, and of metallic aluminum 7
Ground is constituted；The source-drain area 2 is formed in the top layer in the upside of substrate layer 1, spaced apart between two source-drain areas 2, is located at
The source-drain area 2 in left side is designated as left source-drain area, and the source-drain area 2 positioned at right side is designated as right source-drain area；The gate medium 3 is formed in substrate
On the upper surface of layer 1；First gate medium 3 is located at the left side of left source-drain area, and the right-hand member of the first gate medium 3 is by the left end of left source-drain area
Covering；Second gate medium 3 is located between left source-drain area and right source-drain area, and the left end of the second gate medium 3 is by the right-hand member of left source-drain area
Covering, the right-hand member of the second gate medium 3 covers the left end of right source-drain area, between being left between the first gate medium 3 and the second gate medium 3
Every；3rd gate medium 3 is located at the right of right source-drain area, and the left end of the 3rd gate medium 3 covers the right-hand member of right source-drain area, second gate
It is spaced between the gate medium 3 of medium 3 and the 3rd；The source and drain polysilicon electrode 4 is layered in the upper surface of the second gate medium 3
Portion；First phosphorosilicate glass layer 5 is layered on the upper surface of the first gate medium 3；Second phosphorosilicate glass layer 5 is layered in the second gate medium
On 3 upper surface, source and drain polysilicon electrode 4 is wrapped in interior by the second phosphorosilicate glass layer 5；3rd phosphorosilicate glass layer 5 is layered in
On the upper surface of three gate mediums 3；The barrier layer 6 covers the exposed part of source-drain area 2, gate medium 3 and phosphorosilicate glass layer 5；
The metallic aluminum 7 is covered on the outer surface on barrier layer 6；The periphery in substrate layer 1 is formed describedly；
It is characterized in that：Methods described includes：
1) substrate layer 1 is provided；
2) make ground；
3) source-drain area 2 is made；
4) gate medium 3 is made；
5) polysilicon electrode 4 is made；
6) phosphorosilicate glass layer 5 is made；
7) surface gettering is handled；
8) barrier layer 6 is made；
9) metallic aluminum 7 is made；
Step 2) make ground during, be doped using ion implantation technology；Step 3) make source-drain area 2 process
In, it is doped using ion implantation technology；Step 6) in, first in structure surface deposition phosphorosilicate glass, then to phosphorus silicon glass
Glass performs etching to form three phosphorosilicate glass layers 5, when being performed etching to phosphorosilicate glass layer 5, between adjacent phosphorosilicate glass layer 5
The width of etched hole is up big and down small；Step 9) in, first in structure surface deposition metallic aluminium, then using dry plasma etch
Metallic aluminium is performed etching to form metallic aluminum 7.
Claims (3)
1. a kind of output amplifier for frame transfer Visible-light CCD, it is characterised in that：The output amplifier is by substrate layer
(1), two source-drain areas (2), three gate mediums (3), source and drain polysilicon electrode (4), three phosphorosilicate glass layers (5), barrier layers
(6), metallic aluminum (7) and ground composition；The source-drain area (2) is formed in the top layer on the upside of substrate layer (1), two source-drain areas
(2) spaced apart between, the source-drain area (2) positioned at left side is designated as left source-drain area, and the source-drain area (2) positioned at right side is designated as the right side
Source-drain area；The gate medium (3) is formed on the upper surface of substrate layer (1)；First gate medium (3) is located at a left side for left source-drain area
Side, the right-hand member of the first gate medium (3) covers the left end of left source-drain area；Second gate medium (3) is located at left source-drain area and right source and drain
Between area, the left end of the second gate medium (3) covers the right-hand member of left source-drain area, and the right-hand member of the second gate medium (3) is by right source-drain area
Left end covering, it is spaced between the first gate medium (3) and the second gate medium (3)；3rd gate medium (3) is located at right source-drain area
The right, the left end of the 3rd gate medium (3) covers the right-hand member of right source-drain area, the second gate medium (3) and the 3rd gate medium (3) it
Between it is spaced；The source and drain polysilicon electrode (4) is layered in the upper surface middle part of the second gate medium (3)；First phosphorosilicate glass
Layer (5) is layered on the upper surface of the first gate medium (3)；Second phosphorosilicate glass layer (5) is layered in the upper table of the second gate medium (3)
On face, source and drain polysilicon electrode (4) is wrapped in interior by the second phosphorosilicate glass layer (5)；3rd phosphorosilicate glass layer (5) is layered in the 3rd
On the upper surface of gate medium (3)；The barrier layer (6) is by the exposed portion of source-drain area (2), gate medium (3) and phosphorosilicate glass layer (5)
Divide covering；The metallic aluminum (7) is covered on the outer surface of barrier layer (6)；The periphery in substrate layer (1) is formed describedly.
2. the output amplifier according to claim 1 for frame transfer Visible-light CCD, it is characterised in that：It is described to stop
Layer (6) is made up of the first titanium layer, titanium nitride layer and the second titanium layer stacked gradually.
3. a kind of preparation method of output amplifier for frame transfer Visible-light CCD, the output amplifier is by substrate layer
(1), two source-drain areas (2), three gate mediums (3), source and drain polysilicon electrode (4), three phosphorosilicate glass layers (5), barrier layers
(6), metallic aluminum (7) and ground composition；The source-drain area (2) is formed in the top layer on the upside of substrate layer (1), two source-drain areas
(2) spaced apart between, the source-drain area (2) positioned at left side is designated as left source-drain area, and the source-drain area (2) positioned at right side is designated as the right side
Source-drain area；The gate medium (3) is formed on the upper surface of substrate layer (1)；First gate medium (3) is located at a left side for left source-drain area
Side, the right-hand member of the first gate medium (3) covers the left end of left source-drain area；Second gate medium (3) is located at left source-drain area and right source and drain
Between area, the left end of the second gate medium (3) covers the right-hand member of left source-drain area, and the right-hand member of the second gate medium (3) is by right source-drain area
Left end covering, it is spaced between the first gate medium (3) and the second gate medium (3)；3rd gate medium (3) is located at right source-drain area
The right, the left end of the 3rd gate medium (3) covers the right-hand member of right source-drain area, the second gate medium (3) and the 3rd gate medium (3) it
Between it is spaced；The source and drain polysilicon electrode (4) is layered in the upper surface middle part of the second gate medium (3)；First phosphorosilicate glass
Layer (5) is layered on the upper surface of the first gate medium (3)；Second phosphorosilicate glass layer (5) is layered in the upper table of the second gate medium (3)
On face, source and drain polysilicon electrode (4) is wrapped in interior by the second phosphorosilicate glass layer (5)；3rd phosphorosilicate glass layer (5) is layered in the 3rd
On the upper surface of gate medium (3)；The barrier layer (6) is by the exposed portion of source-drain area (2), gate medium (3) and phosphorosilicate glass layer (5)
Divide covering；The metallic aluminum (7) is covered on the outer surface of barrier layer (6)；The periphery in substrate layer (1) is formed describedly；
It is characterized in that：Methods described includes：
1) substrate layer (1) is provided；
2) make ground；
3) source-drain area (2) is made；
4) gate medium (3) is made；
5) polysilicon electrode (4) is made；
6) phosphorosilicate glass layer (5) is made；
7) surface gettering is handled；
8) barrier layer (6) are made；
9) metallic aluminum (7) is made；
Step 2) make ground during, be doped using ion implantation technology；Step 3) make source-drain area (2) process
In, it is doped using ion implantation technology；Step 6) in, first in structure surface deposition phosphorosilicate glass, then to phosphorus silicon glass
Glass performs etching to form three phosphorosilicate glass layers (5), when being performed etching to phosphorosilicate glass layer (5), adjacent phosphorosilicate glass layer (5)
Between etched hole width it is up big and down small；Step 9) in, first in structure surface deposition metallic aluminium, then done using plasma
Method etching performs etching to form metallic aluminum (7) to metallic aluminium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710216550.0A CN106981496B (en) | 2017-04-05 | 2017-04-05 | Output amplifier and production method for frame transfer Visible-light CCD |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710216550.0A CN106981496B (en) | 2017-04-05 | 2017-04-05 | Output amplifier and production method for frame transfer Visible-light CCD |
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| Publication Number | Publication Date |
|---|---|
| CN106981496A true CN106981496A (en) | 2017-07-25 |
| CN106981496B CN106981496B (en) | 2019-08-27 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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