CN106981496B - Output amplifier and production method for frame transfer Visible-light CCD - Google Patents
Output amplifier and production method for frame transfer Visible-light CCD Download PDFInfo
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- CN106981496B CN106981496B CN201710216550.0A CN201710216550A CN106981496B CN 106981496 B CN106981496 B CN 106981496B CN 201710216550 A CN201710216550 A CN 201710216550A CN 106981496 B CN106981496 B CN 106981496B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000012546 transfer Methods 0.000 title claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 62
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 51
- 230000004888 barrier function Effects 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 229920005591 polysilicon Polymers 0.000 claims abstract description 22
- 239000010410 layer Substances 0.000 claims description 121
- 239000004411 aluminium Substances 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 5
- 238000005247 gettering Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- 239000002344 surface layer Substances 0.000 claims description 5
- 230000000903 blocking effect Effects 0.000 claims 1
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 238000012797 qualification Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009194 climbing Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000035755 proliferation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
- H01L27/1485—Frame transfer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses a kind of output amplifier for frame transfer Visible-light CCD, the output amplifier is made of substrate layer, two source-drain areas, three gate mediums, source and drain polysilicon electrode, three phosphorosilicate glass layers, barrier layer, metallic aluminum and ground；The invention also discloses the production methods of aforementioned output amplifier；The method have the benefit that: a kind of output amplifier and production method for frame transfer Visible-light CCD is proposed, the program can effectively improve the quality of frame transfer Visible-light CCD.
Description
Technical field
The present invention relates to a kind of CCD technology more particularly to a kind of output amplifiers and system for frame transfer Visible-light CCD
Make method.
Background technique
Frame transfer Visible-light CCD is a kind of important CCD type, the amplifier one on common frame transfer Visible-light CCD
As be made of substrate layer, two source-drain areas, three gate mediums, source and drain polysilicon electrode, metallic aluminum and ground, structure such as Fig. 2
Shown, for the prior art in production, there are the following problems: 1) prior art generally uses thermal diffusion doping process to be formed
Source-drain area and ground, the characteristic based on thermal diffusion doping process is it is found that the longitudinal diffusion speed of thermal diffusion doping process and laterally expansion
It is almost the same to dissipate speed, when amplifier grid length size is smaller, is easy to cause Punchthrough, amplifier is made to fail, in production grid
When the lesser amplifier of long size, needs to design some structures for preventing Punchthrough in the amplifier, considerably increase grid length
The manufacture difficulty of the lesser amplifier of size；2) prior art is generally existed using wet corrosion technique when making metallic aluminum
Electrode is etched on metallic aluminum, the operational characteristic based on wet corrosion technique is it is found that longitudinal corrosion of wet corrosion technique is fast
Rate and lateral encroaching rate are almost the same, when corroding metallic aluminum downwards, although having the protection of photoresist, corrosive liquid in transverse direction
Also it will do it lateral encroaching, so that the metallic aluminum narrowed thickness at stepped locations, since metallic aluminum is generally using vapor deposition work
Skill is formed, be at the stepped locations on device, below metallic aluminum at step chamfering it is empty, corrosive liquid easily infiltrates into
So that metallic aluminum is occurred broken strip at stepped locations, the direct current reliability of device is made to be difficult to be guaranteed；3) metallic aluminum is direct
It is contacted with silicon materials, since aluminium is spread fastly in silicon, readily diffuses into PN junction position, especially shallow junction PN junction, easy occurring source
Junction spiking is leaked, causes PN junction to fail, cannot be imaged so as to cause CCD, component failure is caused to be scrapped.
Summary of the invention
For the problems in background technique, the invention proposes a kind of output amplifier for frame transfer Visible-light CCD,
Its innovation is: the output amplifier is by substrate layer, two source-drain areas, three gate mediums, source and drain polysilicon electrode, three phosphorus
Silica glass layer, barrier layer, metallic aluminum and ground composition；The source-drain area is formed in the surface layer on the upside of substrate layer, two source and drain
Spaced apart between area, the source-drain area positioned at left side is denoted as left source-drain area, and the source-drain area positioned at right side is denoted as right source-drain area；
The gate medium is formed on the upper surface of substrate layer；First gate medium is located at the left side of left source-drain area, the right side of the first gate medium
End covers the left end of left source-drain area；Second gate medium is between left source-drain area and right source-drain area, the left end of the second gate medium
The right end of left source-drain area is covered, the right end of the second gate medium covers the left end of right source-drain area, the first gate medium and second gate
It is spaced between medium；Third gate medium is located at the right of right source-drain area, and the left end of third gate medium is by the right side of right source-drain area
End covering, it is spaced between the second gate medium and third gate medium；The source and drain polysilicon electrode is layered in second gate medium
Upper surface middle part；First phosphorosilicate glass layer is layered on the upper surface of the first gate medium；Second phosphorosilicate glass layer is layered in
On the upper surface of two gate mediums, source and drain polysilicon electrode is wrapped in interior by the second phosphorosilicate glass layer；Third phosphorosilicate glass layer stackup
On the upper surface of third gate medium；The barrier layer covers the exposed part of source-drain area, gate medium and phosphorosilicate glass layer；Institute
Metallic aluminum is stated to be covered on the outer surface on barrier layer；It is formed in the periphery of substrate layer describedly.
The principle of aforementioned schemes is: existing frame transfer Visible-light CCD output amplifier there are aiming at the problem that, this hair
Bright to propose a kind of new output amplifier structure, in this structure, inventor is provided with phosphorus silicon glass on three gate mediums
Glass layer, wherein, can be effective after being provided with phosphorosilicate glass layer in source and drain polysilicon electrode is wrapped in by the second phosphorosilicate glass layer
Improve stepped locations at body structure surface smoothness, improve the climbing capacity of surface metal, in addition, phosphorosilicate glass layer be conducive to it is miscellaneous
The sucking of matter can effectively improve functional reliability of the device in wet environment especially to the sucking of sodium ion；Meanwhile
Inventor metallic aluminum is isolated with rectangular structure with barrier layer, barrier layer also on metallic aluminum following settings barrier layer
It is possible to prevente effectively from metallic aluminum causes to puncture to lower section silicon structure, device yield is improved.
Based on aforementioned schemes, the invention also provides following preferred embodiments: the barrier layer is by the first titanium for stacking gradually
Layer, titanium nitride layer and the second titanium layer are constituted.In early-stage study, inventor uses the double-layer structure of titanium nitride layer and titanium layer
Barrier layer (titanium nitride layer upper, titanium layer is under) finds that metallic aluminum there are aliquation phenomenon, is found through analysis in scribing, rises
Layer phenomenon is since the adhesion between aluminium and titanium nitride is poor, and under the stress in scribing, aliquation occurs in aluminium, by more
Secondary test discovery, then increase by one first titanium layer in metallic aluminum and titanium nitride layer, it can effectively improve metallic aluminum and lower layer's knot
There is aluminium aliquation situation in the adhesion of structure when can effectively avoid scribing.
Based on aforementioned structure, the invention also provides a kind of production of output amplifier for frame transfer Visible-light CCD
Method, the structure of the output amplifier is as previously mentioned, specific production method are as follows:
1) substrate layer is provided；
2) production ground；
3) source-drain area is made；
4) gate medium is made；
5) polysilicon electrode is made；
6) phosphorosilicate glass layer is made；
7) surface gettering is handled；
8) barrier layer is made；
9) metallic aluminum is made；
During step 2) makes ground, it is doped using ion implantation technology；The process of step 3) production source-drain area
In, it is doped using ion implantation technology；In step 6), first in structural body surface deposition phosphorosilicate glass, then to phosphorus silicon glass
Glass performs etching to form three phosphorosilicate glass layers, quarter when performing etching to phosphorosilicate glass layer, between adjacent phosphorosilicate glass layer
The width of borrosion hole is up big and down small；In step 9), first in structural body surface deposition metallic aluminium, dry plasma etch pair is then used
Metallic aluminium performs etching to form metallic aluminum.
From the point of view of overall process flow, preceding method is roughly the same with prior art, and innovative point therein has: 1, making
It during ground and source-drain area, has been all made of ion implantation technology and has been doped, based on the prior art it is found that ion implantation technology
Concentration and junction depth control precision it is all higher, and almost without horizontal proliferation, can effectively solve described in background technology the 1)
Point problem can effectively improve production efficiency in addition, the operating efficiency of ion implantation technology is also higher；2, phosphorus silicon glass is increased
Glass layer making step, the purpose for making phosphorosilicate glass layer are as previously described；3, it joined surface gettering processing step, gettering processing can
The heavy metal ion such as Fe, Ni, Cu, the Cr that may introduce in technical process are drawn into nucleated areas, to reduce CCD product
Dark current；4, when performing etching to phosphorosilicate glass layer, keep the width of the etched hole between adjacent phosphorosilicate glass layer up big and down small,
It forms one kind " the rim of a bowl " structure and is conducive to contact of the metal with hole to reduce the gradient of surface texture, reduce climbing for metallic aluminium
Slope difficulty and contact resistance；5, barrier layer making step is increased, purpose is as previously described；6, it when making metallic aluminum, uses
Dry plasma etch performs etching metallic aluminium, and dry plasma etch guarantees device it is possible to prevente effectively from there is broken strip situation
Part quality.
Experiment proves that compared with existing processing technology, after structure and manufacture craft of the invention, the direct current of product
Qualification rate is promoted by original 70% or so to 95% or more, exchange qualification rate namely product be imaged zero defect qualification rate from
20% or so originally is promoted to 70% or so, is improved more than 3 times, and the dark current of product is reduced close to 1 times, in the batch of product
Stability and consistency are better than original product between batch.
The method have the benefit that: propose a kind of output amplifier and system for frame transfer Visible-light CCD
Make method, the program can effectively improve the quality of frame transfer Visible-light CCD.
Detailed description of the invention
Fig. 1, structural schematic diagram of the invention；
The structural schematic diagram of Fig. 2, the prior art；
Title corresponding to each label is respectively as follows: substrate layer 1, source-drain area 2, gate medium 3, source and drain polysilicon electrode in figure
4, phosphorosilicate glass layer 5, barrier layer 6, metallic aluminum 7.
Specific embodiment
A kind of output amplifier for frame transfer Visible-light CCD, innovation are: the output amplifier is by substrate layer
1, two source-drain areas, 2, three gate mediums 3,4, three phosphorosilicate glass layers 5 of source and drain polysilicon electrode, barrier layer 6,7 and of metallic aluminum
Ground composition；The source-drain area 2 is formed in the surface layer of 1 upside of substrate layer, spaced apart between two source-drain areas 2, is located at
The source-drain area 2 in left side is denoted as left source-drain area, and the source-drain area 2 positioned at right side is denoted as right source-drain area；The gate medium 3 is formed in substrate
On the upper surface of layer 1；First gate medium 3 is located at the left side of left source-drain area, and the right end of the first gate medium 3 is by the left end of left source-drain area
Covering；Second gate medium 3 is between left source-drain area and right source-drain area, and the left end of the second gate medium 3 is by the right end of left source-drain area
Covering, the right end of the second gate medium 3 cover the left end of right source-drain area, between the first gate medium 3 and the second gate medium 3 there are
Every；Third gate medium 3 is located at the right of right source-drain area, and the left end of third gate medium 3 covers the right end of right source-drain area, second gate
It is spaced between medium 3 and third gate medium 3；The source and drain polysilicon electrode 4 is layered in the upper surface of the second gate medium 3
Portion；First phosphorosilicate glass layer 5 is layered on the upper surface of the first gate medium 3；Second phosphorosilicate glass layer 5 is layered in the second gate medium
On 3 upper surface, source and drain polysilicon electrode 4 is wrapped in interior by the second phosphorosilicate glass layer 5；Third phosphorosilicate glass layer 5 is layered in
On the upper surface of three gate mediums 3；The barrier layer 6 covers the exposed part of source-drain area 2, gate medium 3 and phosphorosilicate glass layer 5；
The metallic aluminum 7 is covered on the outer surface on barrier layer 6；It is formed in the periphery of substrate layer 1 describedly.
Further, the barrier layer 6 is made of the first titanium layer, titanium nitride layer and the second titanium layer stacked gradually.
A kind of production method of the output amplifier for frame transfer Visible-light CCD, the output amplifier is by substrate layer
1, two source-drain areas, 2, three gate mediums 3,4, three phosphorosilicate glass layers 5 of source and drain polysilicon electrode, barrier layer 6,7 and of metallic aluminum
Ground composition；The source-drain area 2 is formed in the surface layer of 1 upside of substrate layer, spaced apart between two source-drain areas 2, is located at
The source-drain area 2 in left side is denoted as left source-drain area, and the source-drain area 2 positioned at right side is denoted as right source-drain area；The gate medium 3 is formed in substrate
On the upper surface of layer 1；First gate medium 3 is located at the left side of left source-drain area, and the right end of the first gate medium 3 is by the left end of left source-drain area
Covering；Second gate medium 3 is between left source-drain area and right source-drain area, and the left end of the second gate medium 3 is by the right end of left source-drain area
Covering, the right end of the second gate medium 3 cover the left end of right source-drain area, between the first gate medium 3 and the second gate medium 3 there are
Every；Third gate medium 3 is located at the right of right source-drain area, and the left end of third gate medium 3 covers the right end of right source-drain area, second gate
It is spaced between medium 3 and third gate medium 3；The source and drain polysilicon electrode 4 is layered in the upper surface of the second gate medium 3
Portion；First phosphorosilicate glass layer 5 is layered on the upper surface of the first gate medium 3；Second phosphorosilicate glass layer 5 is layered in the second gate medium
On 3 upper surface, source and drain polysilicon electrode 4 is wrapped in interior by the second phosphorosilicate glass layer 5；Third phosphorosilicate glass layer 5 is layered in
On the upper surface of three gate mediums 3；The barrier layer 6 covers the exposed part of source-drain area 2, gate medium 3 and phosphorosilicate glass layer 5；
The metallic aluminum 7 is covered on the outer surface on barrier layer 6；It is formed in the periphery of substrate layer 1 describedly；
It is characterized by: the described method includes:
1) substrate layer 1 is provided；
2) production ground；
3) source-drain area 2 is made；
4) gate medium 3 is made；
5) polysilicon electrode 4 is made；
6) phosphorosilicate glass layer 5 is made；
7) surface gettering is handled；
8) barrier layer 6 is made；
9) metallic aluminum 7 is made；
During step 2) makes ground, it is doped using ion implantation technology；The process of step 3) production source-drain area 2
In, it is doped using ion implantation technology；In step 6), first in structural body surface deposition phosphorosilicate glass, then to phosphorus silicon glass
Glass performs etching to form three phosphorosilicate glass layers 5, when performing etching to phosphorosilicate glass layer 5, between adjacent phosphorosilicate glass layer 5
The width of etched hole is up big and down small；In step 9), first in structural body surface deposition metallic aluminium, dry plasma etch is then used
Metallic aluminium is performed etching to form metallic aluminum 7.
Claims (3)
1. a kind of output amplifier for frame transfer Visible-light CCD, it is characterised in that: the output amplifier is by substrate layer
(1), two source-drain areas (2), three gate mediums (3), source and drain polysilicon electrode (4), three phosphorosilicate glass layers (5), barrier layers
(6), metallic aluminum (7) and ground composition；The source-drain area (2) is formed in the surface layer on the upside of substrate layer (1), two source-drain areas
(2) spaced apart between, the source-drain area (2) positioned at left side is denoted as left source-drain area, and the source-drain area (2) positioned at right side is denoted as the right side
Source-drain area；The gate medium (3) is formed on the upper surface of substrate layer (1)；First gate medium (3) is located at a left side for left source-drain area
The right end on side, the first gate medium (3) covers the left end of left source-drain area；Second gate medium (3) is located at left source-drain area and right source and drain
Between area, the left end of the second gate medium (3) covers the right end of left source-drain area, and the right end of the second gate medium (3) is by right source-drain area
Left end covering, it is spaced between the first gate medium (3) and the second gate medium (3)；Third gate medium (3) is located at right source-drain area
The right, the left end of third gate medium (3) covers the right end of right source-drain area, the second gate medium (3) and third gate medium (3) it
Between it is spaced；The source and drain polysilicon electrode (4) is layered in the upper surface middle part of the second gate medium (3)；First phosphorosilicate glass
Layer (5) is layered on the upper surface of the first gate medium (3)；Second phosphorosilicate glass layer (5) is layered in the upper table of the second gate medium (3)
On face, source and drain polysilicon electrode (4) is wrapped in interior by the second phosphorosilicate glass layer (5)；Third phosphorosilicate glass layer (5) is layered in third
On the upper surface of gate medium (3)；The barrier layer (6) is by the exposed portion of source-drain area (2), gate medium (3) and phosphorosilicate glass layer (5)
Divide covering；The metallic aluminum (7) is covered on the outer surface of barrier layer (6)；It is formed in the periphery of substrate layer (1) describedly.
2. the output amplifier according to claim 1 for frame transfer Visible-light CCD, it is characterised in that: the blocking
Layer (6) is made of the first titanium layer, titanium nitride layer and the second titanium layer stacked gradually.
3. a kind of production method of the output amplifier for frame transfer Visible-light CCD, the output amplifier is by substrate layer
(1), two source-drain areas (2), three gate mediums (3), source and drain polysilicon electrode (4), three phosphorosilicate glass layers (5), barrier layers
(6), metallic aluminum (7) and ground composition；The source-drain area (2) is formed in the surface layer on the upside of substrate layer (1), two source-drain areas
(2) spaced apart between, the source-drain area (2) positioned at left side is denoted as left source-drain area, and the source-drain area (2) positioned at right side is denoted as the right side
Source-drain area；The gate medium (3) is formed on the upper surface of substrate layer (1)；First gate medium (3) is located at a left side for left source-drain area
The right end on side, the first gate medium (3) covers the left end of left source-drain area；Second gate medium (3) is located at left source-drain area and right source and drain
Between area, the left end of the second gate medium (3) covers the right end of left source-drain area, and the right end of the second gate medium (3) is by right source-drain area
Left end covering, it is spaced between the first gate medium (3) and the second gate medium (3)；Third gate medium (3) is located at right source-drain area
The right, the left end of third gate medium (3) covers the right end of right source-drain area, the second gate medium (3) and third gate medium (3) it
Between it is spaced；The source and drain polysilicon electrode (4) is layered in the upper surface middle part of the second gate medium (3)；First phosphorosilicate glass
Layer (5) is layered on the upper surface of the first gate medium (3)；Second phosphorosilicate glass layer (5) is layered in the upper table of the second gate medium (3)
On face, source and drain polysilicon electrode (4) is wrapped in interior by the second phosphorosilicate glass layer (5)；Third phosphorosilicate glass layer (5) is layered in third
On the upper surface of gate medium (3)；The barrier layer (6) is by the exposed portion of source-drain area (2), gate medium (3) and phosphorosilicate glass layer (5)
Divide covering；The metallic aluminum (7) is covered on the outer surface of barrier layer (6)；It is formed in the periphery of substrate layer (1) describedly；
It is characterized by: the described method includes:
1) substrate layer (1) is provided；
2) production ground；
3) source-drain area (2) are made；
4) gate medium (3) are made；
5) polysilicon electrode (4) are made；
6) phosphorosilicate glass layer (5) are made；
7) surface gettering is handled；
8) barrier layer (6) are made；
9) metallic aluminum (7) are made；
During step 2) makes ground, it is doped using ion implantation technology；Step 3) makes the process of source-drain area (2)
In, it is doped using ion implantation technology；In step 6), first in structural body surface deposition phosphorosilicate glass, then to phosphorus silicon glass
Glass performs etching to form three phosphorosilicate glass layers (5), when being performed etching to phosphorosilicate glass layer (5), adjacent phosphorosilicate glass layer (5)
Between etched hole width it is up big and down small；It is then dry using plasma first in structural body surface deposition metallic aluminium in step 9)
Method etching performs etching metallic aluminium to form metallic aluminum (7).
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| CN201710216550.0A CN106981496B (en) | 2017-04-05 | 2017-04-05 | Output amplifier and production method for frame transfer Visible-light CCD |
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| CN201710216550.0A CN106981496B (en) | 2017-04-05 | 2017-04-05 | Output amplifier and production method for frame transfer Visible-light CCD |
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| CN106981496B true CN106981496B (en) | 2019-08-27 |
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| CN110335882B (en) * | 2019-06-25 | 2021-05-07 | 中国电子科技集团公司第四十四研究所 | Pixel structure capable of improving frame transfer CCD (Charge coupled device) responsivity |
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|---|---|---|---|---|
| WO2010068244A1 (en) * | 2008-12-10 | 2010-06-17 | Eastman Kodak Company | Method of fabricating image sensors with lateral overflow drains |
| CN202948931U (en) * | 2012-11-06 | 2013-05-22 | 宁波比亚迪半导体有限公司 | Power device for improving morphology of diffusion region |
| CN103972253A (en) * | 2013-01-25 | 2014-08-06 | 索尼公司 | Semiconductor device and method of manufacturing semiconductor device |
| CN106449689A (en) * | 2016-11-11 | 2017-02-22 | 中国电子科技集团公司第四十四研究所 | A frame-transfer visible light CCD with a polyimide cushion layer |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2010068244A1 (en) * | 2008-12-10 | 2010-06-17 | Eastman Kodak Company | Method of fabricating image sensors with lateral overflow drains |
| CN202948931U (en) * | 2012-11-06 | 2013-05-22 | 宁波比亚迪半导体有限公司 | Power device for improving morphology of diffusion region |
| CN103972253A (en) * | 2013-01-25 | 2014-08-06 | 索尼公司 | Semiconductor device and method of manufacturing semiconductor device |
| CN106449689A (en) * | 2016-11-11 | 2017-02-22 | 中国电子科技集团公司第四十四研究所 | A frame-transfer visible light CCD with a polyimide cushion layer |
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