CN110335882A - Frame transfer CCD responsiveness pixel structure can be improved in one kind - Google Patents
Frame transfer CCD responsiveness pixel structure can be improved in one kind Download PDFInfo
- Publication number
- CN110335882A CN110335882A CN201910553563.6A CN201910553563A CN110335882A CN 110335882 A CN110335882 A CN 110335882A CN 201910553563 A CN201910553563 A CN 201910553563A CN 110335882 A CN110335882 A CN 110335882A
- Authority
- CN
- China
- Prior art keywords
- ccd
- signal
- responsiveness
- buried channel
- channel area
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012546 transfer Methods 0.000 title claims abstract description 54
- 230000004043 responsiveness Effects 0.000 title claims abstract description 25
- 230000003321 amplification Effects 0.000 claims abstract description 44
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000002513 implantation Methods 0.000 claims abstract description 13
- 230000015556 catabolic process Effects 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 2
- 238000003384 imaging method Methods 0.000 abstract description 5
- 238000001514 detection method Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 description 5
- 239000000243 solution Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14806—Structural or functional details thereof
- H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The invention belongs to photodetection and imaging fields, and in particular to frame transfer CCD responsiveness pixel structure can be improved in one kind；It is hindered including substrate, multiple parallel vertical transfer electrodes, CCD buried channel area, protection ring and ditch；P-type signal amplification region and N-shaped signal amplification region are disposed between substrate and CCD buried channel area；Vertical transfer electrode is connected with above CCD buried channel area, the side of each vertical transfer electrode is connected with signal by dielectric layer and amplifies coordination electrode；From the left and right sides of substrate top upwards up to protection ring and ditch resistance is respectively set in CCD buried channel area.The present invention is by changing the implantation concentration of signal enlarged structure and its voltage of application, the photosensitive responsiveness of CCD pixel can be changed in real time, so that CCD when facing different incident intensities can more flexible ground selection signal amplifying power, promotion CCD is to the imaging detection adaptability of different light intensity environment.
Description
Technical field
The invention belongs to photodetection and imaging fields, and in particular to frame transfer CCD responsiveness pixel knot can be improved in one kind
Structure.
Background technique
It is that structure is the simplest with the charge coupled cell CCD that frame transfer (Frame transfer, abbreviation FT) mode works
A kind of CCD that is single and being easiest to manufacture.Frame transfer CCD is considered as in one's early years a kind of very good CCD structure, although its
Size is twice of its photosensitive region, but its performance is compared with there is various improvement for iconoscope.
Improving the main means of frame transfer CCD responsiveness at present is the noise for reducing device, improves the quantum efficiency of device.
In terms of reducing noise, under conditions of particular job frequency and operating temperature, the existing noise level of CCD is minimum to be had been lowered to
Within 5 electronics, the limit has been arrived substantially.In terms of improving quantum efficiency, the quantum efficiency highest of back-illuminated type frame transfer CCD has reached
90% or more, also basically reach theoretical limit.
Therefore existing device architecture and technology have basically reached the response sensitivity limit of frame transfer CCD, if it is desired to
Further increase the responsiveness of device, it is necessary to use new technology or/and device architecture.
Summary of the invention
Based on problem of the existing technology, the invention proposes a kind of methods for improving frame transfer CCD responsiveness, mainly
It is to be realized by promoting the luminous sensitivity of CCD pixel itself.Enhance the structure of luminous sensitivity in pixel interior design,
So that the photoperceptivity of CCD pixel is improved, so that the responsiveness of CCD is further promoted.
One kind of the invention can be improved frame transfer CCD responsiveness pixel structure, the pixel structure include substrate, it is multiple simultaneously
Capable vertical transfer electrode, CCD buried channel area, protection ring and ditch resistance；P-type is disposed between substrate and CCD buried channel area
Signal amplification region and N-shaped signal amplification region；It is connected with vertical transfer electrode above CCD buried channel area, each vertical transfer
The side of electrode is connected with signal by dielectric layer and amplifies coordination electrode；From the left and right sides of substrate top upwards up to CCD is buried
Protection ring and ditch resistance is respectively set in ditch area；One of them in p-type and N-shaped is p-type, another is then N-shaped.
Further, substrate is p-substrate, and protection ring uses n-type doping, and ditch resistance uses p-type doping.
Preferably, the implantation concentration of p-type signal amplification region is 0.8 × 1012/cm2~1.2 × 1012/cm2；N-shaped amplification region
Implantation concentration be 0.8 × 1015/cm2~1.2 × 1015/cm2。
Further, p-type signal amplification region and N-shaped signal amplification region are formed with pn-junction diode, amplify when in signal
Apply the positive voltage for being less than or equal to threshold voltage in coordination electrode, which is then in reverse-biased, signal electricity
Son will be collected into the CCD buried channel area below vertical transfer electrode；It is electric when being applied more than threshold value in signal amplification coordination electrode
The positive voltage of pressure, the pn-junction diode is then breakdown, is collected into the signal electron below vertical transfer electrode in CCD buried channel area
Quantity is multiplied；When the positive voltage applied in signal amplification coordination electrode is closed, by applying CCD on vertical transfer electrode
Transfering clock pulse then successively shifts amplified signal electron.
Wherein, threshold voltage can determine that implantation concentration is higher, threshold according to the implantation concentration of adjustment p-type signal amplification region
Threshold voltage (breakdown voltage) is lower, and vice versa.
Preferably, high voltage needed for vertical transfer electrode is 5V~10V, and low-voltage is -5V~0V.
Beneficial effects of the present invention:
The pixel interior design of frame transfer CCD of the invention luminous sensitivity enhancing structure, luminous sensitivity enhancing
Structure is mainly by the buried channel of CCD pixel and substrate corresponding position modelled signal amplification region and coordination electrode, and by additional
Voltage is controlled the amplification, it can be achieved that incident optical signal, and then greatly improves the photosensitive responsiveness of CCD pixel.By changing
The implantation concentration of varying signal enlarged structure and its voltage of application, thus it is possible to vary the photosensitive responsiveness of CCD pixel.Implantation concentration is got over
Greatly, it is stronger (i.e. the photosensitive responsiveness of device is higher) to apply signal amplifying power obtained when identical voltage, equally identical
Implantation concentration under the conditions of, the voltage of application is higher, stronger to the amplifying power of signal.Therefore it can pass through application when in use
Different voltage allows CCD more flexible ground selection signal amplifying power when in face of different incident intensities, CCD pairs of promotion
The imaging detection adaptability of different light intensity environment.Through overtesting, the present invention by the design of reasonable structure and voltage, CCD's
Photosensitive responsiveness improves 10 times or more than traditional frame transfer CCD.In addition, the pixel structure in the present invention directly can be to CCD
Generated signal charge amplifies, and under the state of the art that quantum efficiency reaches capacity, can further promote the sound of device
Response provides new technical solution for the development of high-responsivity CCD.
Detailed description of the invention
Fig. 1 is a kind of top view of pixel structure that frame transfer CCD responsiveness can be improved of the invention；
Fig. 2 is a kind of cut away view of pixel structure that frame transfer CCD responsiveness can be improved of the invention；
Fig. 3 is a kind of perspective view of pixel structure that frame transfer CCD responsiveness can be improved of the invention；
In figure, 1,2,3,4 vertical transfer electrodes, 5, signal amplification coordination electrode, 6, protection ring, 7, ditch resistance, 8, dielectric layer,
9, CCD buried channel, 10, N-shaped signal amplification region, 11, p-type signal amplification region, 12, substrate.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, below in conjunction with attached drawing to of the invention real
The technical solution applied in example is clearly and completely described, it is clear that described embodiment is only that present invention a part is implemented
Example, instead of all the embodiments.
The present invention devises signal amplification region and coordination electrode structure in frame transfer CCD pixel, can be right in CCD pixel
Incident optical signal amplifies, and signal amplifying power can be controlled by changing the voltage of coordination electrode, thus realization pair
The real-time control of signal amplifying power, and then realize the real-time promotion to CCD responsiveness.
A kind of pixel structure that frame transfer CCD responsiveness can be improved, as shown in Figures 1 to 3:
The pixel structure includes substrate 12, multiple parallel vertical transfer electrodes 1,2,3,4, CCD buried channel area 9, protection
Ring 6 and ditch resistance 7；P-type signal amplification region 11 and the amplification of N-shaped signal are disposed between substrate 12 and CCD buried channel area 9
Area 10；Vertical transfer electrode 1 is connected in the top in CCD buried channel area 9,2,3,4, the side of each vertical transfer electrode passes through Jie
Matter layer 8 is connected with signal amplification coordination electrode 5；The left and right sides from 12 top of substrate is upward up to CCD buried channel area 9 is respectively set
Protection ring 6 and ditch resistance 7.
It is understood that vertical transfer electrode parallel in the present invention is provided with four, but the present invention can be not limited to 4
It is a, or 3,5,6 etc..
The working principle of CCD pixel structure in the present embodiment can be as follows:
The frame transfer CCD of the present embodiment increases N-shaped signal in structure and puts compared with conventional frame transfer CCD pixel
Great Qu 10, p-type signal amplification region 11 and signal amplify coordination electrode 5.
During light integral, CCD pixel incident photon enters in pixel, is changed into electron hole pair, hole after being absorbed
It is guided via substrate, remaining electronics is signal electron.It, can by applying high-low voltage to vertical transfer electrode 1,2,3,4
Signal electron is collected in pixel.
Vertical transfer electrode 2 applies high voltage (exemplary voltages range is 5V~10V) in the present embodiment, and electrode 1,3,4 is applied
Add low-voltage (exemplary voltages range -5V~0V).Signal electron will be collected into the CCD buried channel area of 2 lower section of vertical transfer electrode
9。
N-shaped signal amplification region 10 and p-type signal amplification region 11 constitute a pn-junction diode, electric when amplifying control in signal
Apply a positive voltage on pole 5, which is then in reverse-biased, if apply in signal amplification coordination electrode 5
Positive voltage is sufficiently large, and pn-junction diode can be made to puncture, and very high electric field is generated inside CCD pixel, and high electric field can make
The signal electron quantity being collected into 2 lower section CCD buried channel area 9 of vertical transfer electrode before is multiplied, to reach raising
The effect of response device degree.
After realizing amplification to signal electron, signal is amplified into the positive voltage in coordination electrode 5 and is closed.Again by vertical
Apply normal CCD transfering clock pulse in transfer electrode 1~4, amplified signal electron is successively transferred out, it is subsequent
The course of work is consistent with routine frame transfer CCD.It is finally shown by peripheral processes circuit and forms image, complete Polaroid mistake
Journey.
As shown in Figures 2 and 3, the effect of ditch resistance 7 is each pixel that CCD is isolated, and the effect of protection ring 6 is in pixel
It protects the other regions of pixel not to be affected when puncturing, the control of breakdown generation area is amplified in CCD buried channel 9, N-shaped signal
In the range of area 10 and p-type signal amplification region 11.Titanium dioxide is used between vertical transfer electrode 1~4 and signal amplification coordination electrode 5
Silicon dielectric layer is isolated, interelectrode when to avoid work to influence each other.
The structure can be by changing N-shaped signal amplification region 10 and p-type signal amplification region to the amplifying power of signal electron
11 implantation concentration and signal amplifies the voltage in coordination electrode 5 to control.Representative value: the injection of N-shaped signal amplification region 10
Concentration is 1015/cm2, 11 implantation concentration of p-type signal amplification region be 1012/cm2, apply 20V-30V in signal amplification coordination electrode 5
Voltage, the getable signal amplification factor of institute is at 10-20 times.To obtain bigger signal amplifying power, increasing can be passed through
The voltage for adding the implantation concentration of N-shaped signal amplification region 10 and p-type signal amplification region 11 or increasing signal amplification coordination electrode 5 comes
It realizes.
The modelled signal enlarged structure in CCD pixel of the invention, while the injection by changing signal enlarged structure is dense
Degree and its voltage applied, can change the photosensitive responsiveness of CCD pixel, so that CCD enters in face of difference in real time
When penetrating light intensity can more flexible ground selection signal amplifying power, promote CCD to the imaging detection adaptability of different light intensity environment.
Embodiment provided above has carried out further detailed description, institute to the object, technical solutions and advantages of the present invention
It should be understood that embodiment provided above is only the preferred embodiment of the present invention, be not intended to limit the invention, it is all
Any modification, equivalent substitution, improvement and etc. made for the present invention, should be included in the present invention within the spirit and principles in the present invention
Protection scope within.
Claims (5)
1. a kind of pixel structure that frame transfer CCD responsiveness can be improved, the pixel structure includes substrate, multiple parallel vertical
Transfer electrode, CCD buried channel area, protection ring and ditch resistance；It is characterized in that, being disposed with p between substrate and CCD buried channel area
Type signal amplification region and N-shaped signal amplification region；It is connected with vertical transfer electrode above CCD buried channel area, each vertical turn
The side of shift electrode is connected with signal by dielectric layer and amplifies coordination electrode；From the left and right sides of substrate top upwards up to CCD
Protection ring and ditch resistance is respectively set in buried channel area.
2. a kind of pixel structure that frame transfer CCD responsiveness can be improved according to claim 1, which is characterized in that substrate
For p-substrate, protection ring uses n-type doping, and ditch resistance uses p-type doping.
3. a kind of pixel structure that frame transfer CCD responsiveness can be improved according to claim 1, which is characterized in that p-type letter
The implantation concentration of number amplification region is 0.8 × 1012/cm2~1.2 × 1012/cm2；The implantation concentration of N-shaped amplification region is 0.8 × 1015/
cm2~1.2 × 1015/cm2。
4. a kind of pixel structure that frame transfer CCD responsiveness can be improved according to claim 1, which is characterized in that p-type letter
Number amplification region and N-shaped signal amplification region are formed with pn-junction diode, are less than when applying one in signal amplification coordination electrode
Equal to the positive voltage of threshold voltage, which is then in reverse-biased, and signal electron will be collected into vertical transfer electricity
CCD buried channel area below pole；When the positive voltage for being applied more than threshold voltage in signal amplification coordination electrode, the pn-junction diode
It is then breakdown, it is collected into the signal electron quantity below vertical transfer electrode in CCD buried channel area and is multiplied；When signal amplifies
The positive voltage applied in coordination electrode is closed, by applying the pulse of CCD transfering clock on vertical transfer electrode, then after amplifying
Signal electron successively shift.
5. a kind of pixel structure that frame transfer CCD responsiveness can be improved according to claim 1, which is characterized in that vertical
High voltage needed for transfer electrode is 5V~10V, and low-voltage is -5V~0V.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910553563.6A CN110335882B (en) | 2019-06-25 | 2019-06-25 | Pixel structure capable of improving frame transfer CCD (Charge coupled device) responsivity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910553563.6A CN110335882B (en) | 2019-06-25 | 2019-06-25 | Pixel structure capable of improving frame transfer CCD (Charge coupled device) responsivity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110335882A true CN110335882A (en) | 2019-10-15 |
| CN110335882B CN110335882B (en) | 2021-05-07 |
Family
ID=68142391
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910553563.6A Active CN110335882B (en) | 2019-06-25 | 2019-06-25 | Pixel structure capable of improving frame transfer CCD (Charge coupled device) responsivity |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110335882B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111787247A (en) * | 2020-06-19 | 2020-10-16 | 中国电子科技集团公司第四十四研究所 | Multiplication register structure and EMCCD (electron-multiplying charge coupled device) comprising same |
| WO2022188099A1 (en) * | 2021-03-11 | 2022-09-15 | 深圳市大疆创新科技有限公司 | Detector, detection device and method, mobile platform, and readable storage medium |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010278086A (en) * | 2009-05-26 | 2010-12-09 | Panasonic Corp | Solid-state imaging device |
| CN101960597A (en) * | 2009-01-30 | 2011-01-26 | 浜松光子学株式会社 | Solid-state imaging device |
| CN106981496A (en) * | 2017-04-05 | 2017-07-25 | 中国电子科技集团公司第四十四研究所 | Output amplifier and preparation method for frame transfer Visible-light CCD |
| CN107046046A (en) * | 2017-04-14 | 2017-08-15 | 中国电子科技集团公司第四十四研究所 | CCD pixel structures |
| CN107946389A (en) * | 2017-11-14 | 2018-04-20 | 重庆邮电大学 | A kind of CMOS single-photon avalanche diodes for long-wave band faint light |
| JP2018067615A (en) * | 2016-10-19 | 2018-04-26 | セイコーエプソン株式会社 | Solid-state imaging device, method of manufacturing the same, and electronic device |
-
2019
- 2019-06-25 CN CN201910553563.6A patent/CN110335882B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101960597A (en) * | 2009-01-30 | 2011-01-26 | 浜松光子学株式会社 | Solid-state imaging device |
| JP2010278086A (en) * | 2009-05-26 | 2010-12-09 | Panasonic Corp | Solid-state imaging device |
| JP2018067615A (en) * | 2016-10-19 | 2018-04-26 | セイコーエプソン株式会社 | Solid-state imaging device, method of manufacturing the same, and electronic device |
| CN106981496A (en) * | 2017-04-05 | 2017-07-25 | 中国电子科技集团公司第四十四研究所 | Output amplifier and preparation method for frame transfer Visible-light CCD |
| CN107046046A (en) * | 2017-04-14 | 2017-08-15 | 中国电子科技集团公司第四十四研究所 | CCD pixel structures |
| CN107946389A (en) * | 2017-11-14 | 2018-04-20 | 重庆邮电大学 | A kind of CMOS single-photon avalanche diodes for long-wave band faint light |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111787247A (en) * | 2020-06-19 | 2020-10-16 | 中国电子科技集团公司第四十四研究所 | Multiplication register structure and EMCCD (electron-multiplying charge coupled device) comprising same |
| CN111787247B (en) * | 2020-06-19 | 2022-09-16 | 中国电子科技集团公司第四十四研究所 | Multiplication register structure and EMCCD (electron-multiplying charge coupled device) comprising same |
| WO2022188099A1 (en) * | 2021-03-11 | 2022-09-15 | 深圳市大疆创新科技有限公司 | Detector, detection device and method, mobile platform, and readable storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110335882B (en) | 2021-05-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9515106B2 (en) | Radiation imaging device with metal-insulator-semiconductor photodetector and thin film transistor | |
| CN105810775B (en) | A kind of NP type single-photon avalanche diodes based on cmos image sensor technique | |
| US10186536B2 (en) | Image sensor | |
| US8115242B2 (en) | Pinned photodiode CMOS pixel sensor | |
| US8368164B2 (en) | Phototransistor having a buried collector | |
| JP5385315B2 (en) | Vertical silicon photomultiplier tube with excellent quantum efficiency in all wavelength bands | |
| CN107946389A (en) | A kind of CMOS single-photon avalanche diodes for long-wave band faint light | |
| US20090039397A1 (en) | Image sensor structure | |
| CN107949913A (en) | Solid-state imager | |
| US10020329B2 (en) | Image sensor with solar cell function | |
| CN107768390A (en) | Image detector | |
| CN106663689B (en) | The unit pixel and its light receiving element of imaging sensor | |
| US9401383B2 (en) | Photoconductive element for radiation detection in a radiography imaging system | |
| CN110335882A (en) | Frame transfer CCD responsiveness pixel structure can be improved in one kind | |
| CN113421942B (en) | Photodetection transistor, method for manufacturing the same, and photodetection method using the same | |
| US11646330B2 (en) | Unit cell of display panel including integrated TFT photodetector | |
| CN113437099B (en) | Photoelectric detector, manufacturing method thereof and corresponding photoelectric detection method | |
| CN109411550A (en) | A kind of CMOS SPAD photoelectric device of p-well/inverse doping deep N-well | |
| US10222487B2 (en) | X-ray detector, X-ray imaging device using same, and driving method therefor | |
| WO2022126864A1 (en) | Integrated photoelectric sensor and preparation method therefor | |
| CN109904260B (en) | Light sensing semiconductor unit, light sensing semiconductor array and light sensing system | |
| CN103066097B (en) | High-sensitivity solid-state color image sensor | |
| US20080272413A1 (en) | Light-Sensitive Component | |
| CN115274912B (en) | High spatial resolution X-ray detector unit, detector and method for manufacturing the same | |
| CN117150769A (en) | Area array SPAD-based high-detection-efficiency self-focusing pixel design method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |