CN106972071B - 螺旋盘形分布功能层的光电探测器 - Google Patents
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Abstract
本申请提供了一种新结构的光电探测器,其中包括螺旋盘形的p型AlGaAs层,并且所述螺旋盘形的空隙也是螺旋盘形且两者互补,在所述p型AlGaAs层螺旋盘形的空隙中形成n型GaAs层,光通过侧面进入功能层,由于存在多个p型AlGaAs和n型GaAs的结,能够使得照射入的光经过多个pn结,提高了探测器的效率,充分利用照射到的光,使得传感器的灵敏度得到很大的提升。
Description
技术领域
本发明涉及一种传感器,具体涉及一种螺旋盘形分布功能层的光电探测器。
背景技术
诸如智能电话、平板电脑、数字媒体播放器等的电子设备越来越多地采用光学(例如,光)传感器来控制对设备所提供的多种功能的操控。例如,电子设备通常使用光传感器来检测周围的光照条件,以控制设备的显示屏幕的亮度。典型的光传感器采用将所接收的光转变成电信号(例如,电流或电压)的光电探测器,例如光电二极管、光电晶体管等。
光传感器通常用于手势感测设备中。手势感测设备使得能够在用户没有实际触摸手势感测设备所在的设备的情况下检测物理运动(例如,“手势”)。所检测的运动可以随后被用作设备的输入命令。在实施方式中,电子设备被编程以识别不同的非接触手动作,例如左到右、右到左、上到下、下到上、里到外、外到里等。手势感测设备广泛地应用于手持电子设备中,手持电子设备例如是平板电脑设备和智能电话、以及诸如膝上型电脑、视频游戏控制台等的其它便携式电子设备。
光电探测传感器的基本功能是把入射到探测器上的光功率转换为相应的光电流。其性能的好坏直接关系到接收处理电路的精度。因此,只有选择和设计合适的光电探测器,才不会削弱接收处理电路的性能。设计时,主要考虑的是光电探测器的噪声,量子效率,响应度等几项技术指标。
在很多应用领域,例如光耦合器输出部分,往往需要将光电探测器和信号处理集成在同一块单芯片上,也即是实现光电探测器与信号处理电路的工艺兼容,而这又是一项技术十分复杂、难度相当大。
发明内容
本发明提供一种螺旋盘形分布功能层的光电探测器,其特征在于,包含:
绝缘性基板;
基板上形成螺旋盘形的p型AlGaAs层,并且所述螺旋盘形的空隙也是螺旋盘形且两者互补,在所述p型AlGaAs层螺旋盘形的空隙中形成n型GaAs层;
所述p型AlGaAs层和所述n型GaAs层在一层内,且形成光电探测器的功能层;
在所述p型AlGaAs层和所述n型GaAs层上方分别形成对应的螺旋盘形细栅线;
形成细栅线后在上表面形成氟化镁层;
探测时,光从侧面进入所述功能层。
进一步地,所述两段细栅线在功能层一侧引出,并连接至探测电路的电极。
进一步地,所述氟化镁层上还形成有氮化硅层。
进一步地,所述p型AlGaAs层和所述n型GaAs层形成后进行退火处理。
进一步地,所述细栅线的宽度是所述p型AlGaAs层和所述n型GaAs层螺旋盘形一段的宽度的1/9-1/2。
进一步地,所述螺旋盘形的宽度始终保持相同。
进一步地,所述p型AlGaAs层和所述n型GaAs层螺旋盘形在中心的交汇处设置绝缘材料进行间隔。
进一步地,所述螺旋盘形的宽度从里到外宽度逐渐变大。
本发明的有益效果在于:本申请提供了一种新结构的光电探测器,其中包括螺旋盘形的p型AlGaAs层,并且所述螺旋盘形的空隙也是螺旋盘形且两者互补,在所述p型AlGaAs层螺旋盘形的空隙中形成n型GaAs层,光通过侧面进入功能层,由于存在多个p型AlGaAs和n型GaAs的结,能够使得照射入的光经过多个pn结,提高了探测器的效率,充分利用照射到的光,使得传感器的灵敏度得到很大的提升。
附图说明
图1为本发明螺旋盘形分布功能层的光电探测器的俯视示意图;
图2为图1中光电探测器A-A截面的结构示意图。
具体实施方式
为了便于理解本发明,下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳的实施例。但是,本发明可以以许多不同的形式来实现,并不限于本文所描述的实施例。相反地,提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。
下面将结合附图及具体实施例对本发明作进一步详细说明。
参见图1,本发明提供一种螺旋盘形分布功能层的光电探测器,其特征在于,包含:
绝缘性基板1;
基板上形成螺旋盘形的p型AlGaAs层2,并且所述螺旋盘形的空隙也是螺旋盘形且两者互补,在所述p型AlGaAs层2螺旋盘形的空隙中形成n型GaAs层3;
所述p型AlGaAs层2和所述n型GaAs层3在一层内,且形成光电探测器的功能层;
在所述p型AlGaAs层2和所述n型GaAs层3上方分别形成对应的螺旋盘形细栅线4;
形成细栅线4后在上表面形成氟化镁层5;
探测时,光从侧面进入所述功能层。
进一步地,所述两段细栅线4在功能层一侧引出,并连接至探测电路的电极。
进一步地,所述氟化镁层5上还形成有氮化硅层。
进一步地,所述p型AlGaAs层2和所述n型GaAs层3形成后进行退火处理。
进一步地,所述细栅线4的宽度是所述p型AlGaAs层2和所述n型GaAs层3螺旋盘形一段的宽度的1/9-1/2。
进一步地,所述螺旋盘形的宽度始终保持相同。
进一步地,所述p型AlGaAs层2和所述n型GaAs层3螺旋盘形在中心的交汇处设置绝缘材料进行间隔。
进一步地,所述螺旋盘形的宽度从里到外宽度逐渐变大。
本申请提供了一种新结构的光电探测器,其中包括螺旋盘形的p型AlGaAs层,并且所述螺旋盘形的空隙也是螺旋盘形且两者互补,在所述p型AlGaAs层螺旋盘形的空隙中形成n型GaAs层,光通过侧面进入功能层,由于存在多个p型AlGaAs和n型GaAs的结,能够使得照射入的光经过多个pn结,提高了探测器的效率,充分利用照射到的光,使得传感器的灵敏度得到很大的提升。
附图中描述位置关系的用于仅用于示例性说明,不能理解为对本专利的限制,显然,本发明的上述实施例仅仅是为清楚地说明本发明所作的举例,而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明权利要求的保护范围之内。
Claims (8)
1.一种螺旋盘形分布功能层的光电探测器,其特征在于,包含:
绝缘性基板;
基板上形成螺旋盘形的p型AlGaAs层,并且所述螺旋盘形的空隙也是螺旋盘形且两者互补,在所述p型AlGaAs层螺旋盘形的空隙中形成n型GaAs层;
所述p型AlGaAs层和所述n型GaAs层在一层内,且形成光电探测器的功能层;
在所述p型AlGaAs层和所述n型GaAs层上方分别形成对应的螺旋盘形细栅线;
形成细栅线后在上表面形成氟化镁层;
探测时,光从侧面进入所述功能层。
2.如权利要求1所述的螺旋盘形分布功能层的光电探测器,其特征在于,所述细栅线在功能层一侧引出,并连接至探测电路的电极。
3.如权利要求2所述的螺旋盘形分布功能层的光电探测器,其特征在于,所述氟化镁层上还形成有氮化硅层。
4.如权利要求1所述的螺旋盘形分布功能层的光电探测器,其特征在于,所述p型AlGaAs层和所述n型GaAs层形成后进行退火处理。
5.如权利要求4所述的螺旋盘形分布功能层的光电探测器,其特征在于,所述细栅线的宽度是所述p型AlGaAs层和所述n型GaAs层螺旋盘形一段的宽度的1/9-1/2。
6.如权利要求1所述的螺旋盘形分布功能层的光电探测器,其特征在于,所述螺旋盘形的宽度始终保持相同。
7.如权利要求6所述的螺旋盘形分布功能层的光电探测器,其特征在于,所述p型AlGaAs层和所述n型GaAs层螺旋盘形在中心的交汇处设置绝缘材料进行间隔。
8.如权利要求1所述的螺旋盘形分布功能层的光电探测器,其特征在于,所述螺旋盘形的宽度从里到外宽度逐渐变大。
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