CN107731943B - 一种铜铟镓基光电探测器 - Google Patents
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- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 53
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 18
- 229910052802 copper Inorganic materials 0.000 title claims description 18
- 239000010949 copper Substances 0.000 title claims description 18
- 229910052738 indium Inorganic materials 0.000 title claims description 15
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 title claims description 15
- 239000005864 Sulphur Substances 0.000 claims abstract description 39
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 38
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims abstract description 38
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims abstract description 26
- 230000008859 change Effects 0.000 claims abstract description 6
- 239000004615 ingredient Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- IRPLSAGFWHCJIQ-UHFFFAOYSA-N selanylidenecopper Chemical compound [Se]=[Cu] IRPLSAGFWHCJIQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 239000011669 selenium Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 33
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Abstract
本发明提供了一种新颖的基于铜铟镓硒和铜铟镓硫的光电探测器,形成一层复合功能层,所述复合功能层包括铜铟镓硒和铜铟镓硫相接触的部分转变为铜铟镓硒硫,并且成分在横向方向上渐变,对功能层进行了改性,并调整其电学性能,使其满足光电探测器的要求,进一步提升了探测器的灵敏度,使得传感器的稳定性得到了很大的提升。
Description
技术领域
本发明涉及一种传感器,具体涉及一种铜铟镓基光电探测器。
背景技术
诸如智能电话、平板电脑、数字媒体播放器等的电子设备越来越多地采用光学(例如,光)传感器来控制对设备所提供的多种功能的操控。例如,电子设备通常使用光传感器来检测周围的光照条件,以控制设备的显示屏幕的亮度。典型的光传感器采用将所接收的光转变成电信号(例如,电流或电压)的光电探测器,例如光电二极管、光电晶体管等。
光传感器通常用于手势感测设备中。手势感测设备使得能够在用户没有实际触摸手势感测设备所在的设备的情况下检测物理运动(例如,“手势”)。所检测的运动可以随后被用作设备的输入命令。在实施方式中,电子设备被编程以识别不同的非接触手动作,例如左到右、右到左、上到下、下到上、里到外、外到里等。手势感测设备广泛地应用于手持电子设备中,手持电子设备例如是平板电脑设备和智能电话、以及诸如膝上型电脑、视频游戏控制台等的其它便携式电子设备。
光电探测传感器的基本功能是把入射到探测器上的光功率转换为相应的光电流。其性能的好坏直接关系到接收处理电路的精度。因此,只有选择和设计合适的光电探测器,才不会削弱接收处理电路的性能。设计时,主要考虑的是光电探测器的噪声,量子效率,响应度等几项技术指标。
在很多应用领域,例如光耦合器输出部分,往往需要将光电探测器和信号处理集成在同一块单芯片上,也即是实现光电探测器与信号处理电路的工艺兼容,而这又是一项技术十分复杂、难度相当大。
目前铜铟镓硒和铜铟镓硫在光伏和光电探测上的应用已经被广泛研究,但其中的潜力并没有被完全挖掘出来,因此基于铜铟镓硒和铜铟镓硫的光电传感器,尤其是与其它材料相结合的光电传感器还有很大的开发空间,在该领域还有很多值得发现和寻找的各种结构或结构与材料组合的光电传感器。
发明内容
本发明提供一种新型结构的基于铜铟镓硒和铜铟镓硫复合物气体传感器,它能够加速载流子的收集,充分利用功能层材料,使得传感器的灵敏度得到很大的提升。本发明所采用的技术方案是:一种铜铟镓基光电探测器,包含:
绝缘性柔性基板,所述柔性基板表面具有一层金属层;
金属层上形成横向包括间隔排列的铜铟镓硒和铜铟镓硫的光吸收层,且形成之后经过退火,使铜铟镓硒和铜铟镓硫相接触的部分转变为铜铟镓硒硫,并且成分在横向方向上渐变;
所述光吸收层上的透明导电氧化物层;
所述透明导电氧化物层上的金属栅电极,用于收集电流;
包括间隔排列的铜铟镓硒和铜铟镓硫的光吸收层由下列方法制备:先在柔性基板表面上的金属层上制备铜铟镓硫层,然后通过掩膜刻蚀掉部分铜铟镓硫层,形成间隔排列的铜铟镓硫,在被刻蚀掉铜铟镓硫的部分形成铜铟镓硒,然后去除掩膜并进行表面平坦化,表面平坦化后进行退火。
进一步地,铜铟镓硫层的制备方法是通过磁控溅射铜铟镓硫靶材形成。
进一步地,所述铜铟镓硒是贫铜富硒。
进一步地,所述退火是在硒蒸气氛围下进行,退火温度在450-600℃。
进一步地,所述金属层和所述金属栅电极分别连接探测电路的两个探测电极。
进一步地,其特征在于,所述铜铟镓硒和铜铟镓硫横向宽度的比例范围是1.5-2:1。
进一步地,所述透明导电氧化物层中掺杂有纳元素。
进一步地,所述金属电极层的材料选自下列材料:银、铜、钯、锌、铂或者钼。
本发明的有益效果在于:本发明提供了一种新颖的基于铜铟镓硒和铜铟镓硫的光电探测器,形成一层复合功能层,所述复合功能层包括铜铟镓硒和铜铟镓硫相接触的部分转变为铜铟镓硒硫,并且成分在横向方向上渐变,对功能层进行了改性,并调整其电学性能,使其满足光电探测器的要求,进一步提升了探测器的灵敏度,使得传感器的稳定性得到了很大的提升。
附图说明
图1为本发明铜铟镓基光电探测器的结构示意图。
具体实施方式
为了便于理解本发明,下面将参照相关附图对本发明进行更全面的描述。附图中给出了本发明的较佳的实施例。但是,本发明可以以许多不同的形式来实现,并不限于本文所描述的实施例。相反地,提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。
下面将结合附图及具体实施例对本发明作进一步详细说明。
参见图1,本发明提供一种铜铟镓基光电探测器,其特征在于,包含:
绝缘性柔性基板1,所述柔性基板1表面具有一层金属层3;
金属层3上形成横向包括间隔排列的铜铟镓硒43和铜铟镓硫44的光吸收层4,且形成之后经过退火,使铜铟镓硒43和铜铟镓硫44相接触的部分转变为铜铟镓硒硫,并且成分在横向方向上渐变;
所述光吸收层4上的透明导电氧化物层2;
所述透明导电氧化物层2上的金属栅电极6,用于收集电流;
包括间隔排列的铜铟镓硒43和铜铟镓硫44的光吸收层4由下列方法制备:先在柔性基板1表面上的金属层3上制备铜铟镓硫44层,然后通过掩膜刻蚀掉部分铜铟镓硫44层,形成间隔排列的铜铟镓硫44,在被刻蚀掉铜铟镓硫44的部分形成铜铟镓硒43,然后去除掩膜并进行表面平坦化,表面平坦化后进行退火。
进一步地,铜铟镓硫44层的制备方法是通过磁控溅射铜铟镓硫44靶材形成。
进一步地,所述铜铟镓硒43是贫铜富硒。
进一步地,所述退火是在硒蒸气氛围下进行,退火温度在450-600℃。
进一步地,所述金属层3和所述金属栅电极6分别连接探测电路的两个探测电极。
进一步地,其特征在于,所述铜铟镓硒43和铜铟镓硫44横向宽度的比例范围是1.5-2:1。
进一步地,所述透明导电氧化物层2中掺杂有纳元素。
进一步地,所述金属电极层的材料选自下列材料:银、铜、钯、锌、铂或者钼。
本发明提供了一种新颖的基于铜铟镓硒和铜铟镓硫的光电探测器,形成一层复合功能层,所述复合功能层包括铜铟镓硒和铜铟镓硫相接触的部分转变为铜铟镓硒硫,并且成分在横向方向上渐变,对功能层进行了改性,并调整其电学性能,使其满足光电探测器的要求,进一步提升了探测器的灵敏度,使得传感器的稳定性得到了很大的提升。
附图中描述位置关系的用于仅用于示例性说明,不能理解为对本专利的限制,显然,本发明的上述实施例仅仅是为清楚地说明本发明所作的举例,而并非是对本发明的实施方式的限定。对于所属领域的普通技术人员来说,在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等,均应包含在本发明权利要求的保护范围之内。
Claims (8)
1.一种铜铟镓基光电探测器,其特征在于,包含:
绝缘性柔性基板,所述绝缘性柔性基板表面具有一层金属层;
金属层上形成横向包括间隔排列的铜铟镓硒和铜铟镓硫的光吸收层,且形成之后经过退火,使铜铟镓硒和铜铟镓硫相接触的部分转变为铜铟镓硒硫,并且成分在横向方向上渐变;
所述光吸收层上的透明导电氧化物层;
所述透明导电氧化物层上的金属栅电极,用于收集电流;
包括间隔排列的铜铟镓硒和铜铟镓硫的光吸收层由下列方法制备:先在绝缘性柔性基板表面上的金属层上制备铜铟镓硫层,然后通过掩膜刻蚀掉部分铜铟镓硫层,形成间隔排列的铜铟镓硫,在被刻蚀掉铜铟镓硫的部分形成铜铟镓硒,然后去除掩膜并进行表面平坦化,表面平坦化后进行退火。
2.如权利要求1所述的铜铟镓基光电探测器,其特征在于,铜铟镓硫层的制备方法是通过磁控溅射铜铟镓硫靶材形成。
3.如权利要求2所述的铜铟镓基光电探测器,其特征在于,所述铜铟镓硒是贫铜富硒。
4.如权利要求1所述的铜铟镓基光电探测器,其特征在于,所述退火是在硒蒸气氛围下进行,退火温度在450-600℃。
5.如权利要求4所述的铜铟镓基光电探测器,其特征在于,所述金属层和所述金属栅电极分别连接探测电路的两个探测电极。
6.如权利要求1-5任一项权利要求所述的铜铟镓基光电探测器,其特征在于,所述铜铟镓硒和铜铟镓硫横向宽度的比例范围是1.5-2:1。
7.如权利要求1所述的铜铟镓基光电探测器,其特征在于,所述透明导电氧化物层中掺杂有钠元素。
8.如权利要求1所述的铜铟镓基光电探测器,其特征在于,所述金属电极层的材料选自下列材料:银、铜、钯、锌、铂或者钼。
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