CN106960827A - 三维封装结构及其封装方法 - Google Patents
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Abstract
本发明公开了一种三维封装结构与封装方法,包括下封装体、金属层框架、以及芯片(集成电路芯片和/或微机电芯片),金属层框架与芯片均设置于下封装体上方,金属层框架通过导电连接材料与下封装体形成电连接,芯片放置于金属层框架上表面或者下封装体的上表面,芯片通过电连接机构与金属层框架形成电连接。下封装体中包含有一个或多个集成电路芯片和/或微机电芯片和/或其他元器件。本方案封装结构简单,尤其适用于将各类微机电芯片与其他芯片形成集成模块,具有普适性,工艺容易实现,产品质量有充分保证且封装按工艺能力测算应具有极高良品率。
Description
技术领域
本发明属于芯片封装领域,尤其适用于微机电芯片封装模块的三维封装结构及其封装方法。
背景技术
集成电路(IC)芯片是20世纪50年代后期至60年代发展起来的一种新型半导体器件。它是经过氧化、光刻、扩散、外延、蒸铝等半导体制造工艺,把构成具有一定功能的电路所需的晶体管、电阻、电容等元件及它们之间的连接导线全部集成在一小块硅片表面上,然后将硅片表面电路与外部建立电连接并封装起来。
集成电路封装,是把集成电路装配为芯片最终产品的过程,就是把Foundry生产出来的集成电路裸片(Die)放在一块起到承载作用的基板上,把管脚引出来,然后固定包封成为一个整体。图1为一种封装结构,通过铜引脚将芯片电路引到外部,铜引脚与芯片表面电路用引线键合连接。
微机电系统(MEMS, Micro-Electro-Mechanical System),也叫做微电子机械系统、微机电、微机械等,是在微电子技术(半导体制造技术)基础上发展起来的,融合了光刻、腐蚀、薄膜、LIGA、硅微加工、非硅微加工和精密机械加工等技术制作的高科技电子机械器件,它是在芯片内形成机械机构、输出对外界感应信号的微型传感器产品,其核心部分即为微机电(MEMS)芯片。与集成电路芯片一样,微机电(MEMS)芯片也需要封装。如图2所示,为MEMS压力传感器的封装结构。
微机电系统(MEMS)目前正在广泛应用于物联网、可穿戴产品及智能产品等领域。当前世界集成电路(IC)技术发展最显著的趋势就是以微机电(MEMS)应用为主题的各种产品即将进入成长爆发期,各种应用方向的市场需求十分强劲。但当前国际上针对MEMS传感芯片与IC芯片集成的方案仍然停留在将MEMS芯片与IC芯片集成在一个塑封体内,这样的模块集成度很低,而且不能将最常用的压力传感芯片集成在其中。迄今为止,国际上未有一家公司推出具有普适性的针对MEMS传感模块的集成封装方案,微机电产品的应用因此受限重重而停滞不前。
MEMS传感器凭借其体积小、成本低以及可与其他智能芯片集成在一起的巨大优势,将成为传感器的主要生产技术与应用形式。消费电子、汽车电子、医疗服务是MEMS传感器的主要应用市场,今后MEMS的应用领域将逐渐扩大,包括正在兴起的可穿戴设备、物联网、以及和人们生活息息相关的智能家居和智能城市都是潜力很大的应用领域。而这些新兴领域需要的主要核心架构是将低功耗MCU、eNVM、Analog & PM IC,及无线与连接芯片加以整合,再连接各种传感器芯片,因此提供芯片与传感器集成整合的解决方案与制程实现将意义重大,发展空间很大。
从技术的角度分析,引线键合仍然是最通用最经济的芯片连接方式。虽然圆片级封装(WLP)及硅穿孔(TSV)已被考虑引入到MEMS的封装中,但是其高昂的成本、较差的集成可行性、较低的良率与可靠性使得其应用停滞不前。事实证明,成熟稳健的引线键合技术才是MEMS传感集成可行的连接方式。
当前国际上针对MEMS传感芯片与IC芯片集成的方案仍然停留在将MEMS芯片与IC芯片集成在一个塑封体内,这样的模块集成度很低,而且不能将最常用的压力传感芯片集成在其中。如图3、图4所示的封装结构为惯性九轴传感器集成模块目前的产品结构(集成了ASIC/MCU芯片、陀螺仪芯片、加速度传感器芯片以及磁传感器芯片),也是目前国际上最先进的MEMS集成产品了,采用了芯片三维堆叠的方式,但其集成度仍低且不能集成压力传感器。该集成产品模块的特点是:集成度较低(集成了3个MEMS芯片及1个IC芯片);不能集成压力传感器;只限于惯性传感应用,没有普适性;工艺难于实现,良率较低(小于95%甚至更低)。
目前市场迫切需要推出具有高集成度的MEMS传感模块,也即MEMS芯片与ASIC/MCU芯片或其他芯片的高度集成的封装模块,需要将多个集成电路芯片与多个微机电芯片混合封装在一个模块中。尤其是物联网及可穿戴装置需要的核心构架,即将低功耗的MCU、eNVM、Analog&PM芯片、无线RF与连接芯片以及各类MEMS传感器芯片加以整合,开发出集成传感模块的新的产品构架与集成工艺,并实现产品化。市场需要的是采用传统方式的三维封装就可实现模块集成,其成本低但产品附加值极高。
发明内容
本发明所要解决的技术问题是:提供一种三维封装模块及封装方法,解决现有技术中微机电芯片与集成电路芯片集成度低、工艺难于实现、良率较低的问题。
本发明为解决上述技术问题采用以下技术方案:
一种三维封装结构,包括下封装体、金属层框架和芯片,其特征在于:所述的芯片为集成电路芯片和/或微机电芯片,金属层框架与芯片均设置于下封装体上方,金属层框架通过导电连接材料与下封装体形成电连接,芯片放置于金属层框架上表面或者下封装体的上表面,芯片通过电连接机构与金属层框架形成电连接;对上述技术方案作进一步的说明,所述金属层框架和/或芯片的全部或部分被塑封胶塑封;对上述技术方案作进一步的说明,所述的塑封后的塑封体具有中空的型腔结构;对上述技术方案作进一步的说明,所述的中空的型腔结构内设置有填充胶;对上述技术方案作进一步的说明,该三维封装结构包含有置于上方的封合装置或封合盖;对上述技术方案作进一步的说明,所述金属层框架与下封装体之间除所述导电连接材料外的缝隙部分被封合材料或者塑封胶填充;对上述技术方案作进一步的说明,所述的金属层框架可以通过预制成型的方法先得到,金属层框架也可采用喷涂、溅射、电镀或化学镀的方法直接在下封装体上方形成;下封装体与金属层框架实现无缝隙接触;对上述技术方案作进一步的说明,所述下封装体中包含一个或多个集成电路芯片和/或微机电芯片和/或其他元器件。
一种基于权利要求1所述的三维封装结构封装方法,其特征在于:包括如下步骤:
步骤1、制作包含金属层框架的预塑封体(留有型腔);
步骤2、将预塑封体与已封装好的下封装体结合,形成预塑封体与下封装体的电连接;
步骤3、在预塑封体型腔内放置微机电芯片,并形成芯片与金属层框架的电连接;
步骤4、在预塑封体型腔内设置填充胶;
步骤5、在预塑封体型腔上方设置封合盖,完成三维封装。
与现有技术相比,本发明具有以下有益效果:
1、本方案的封装结构集成度较高;可以集成压力传感器芯片;具有普适性,适用于各类微机电集成封装;工艺容易实现,良品率按工艺能力测算高于99%。
2、本发明能够将集成电路芯片与MEMS传感器芯片加以整合,开发出集成传感模块的新产品构架与集成工艺,极易实现产品化。
3、本产品结构新颖、工艺独特,采用传统的引线键合方式的三维封装就可实现模块集成,其成本低但产品附加值极高。
4、可以针对各类MEMS传感器制造出个性化的集成产品投放市场,本发明的产品化应用方向能够集中于如应用于智能机器与可穿戴产品的多轴惯性传感系统集成产品、应用于汽车的TPMS胎压监测系统的传感集成产品、应用于智能手机与可穿戴产品的气压与高度计产品及微型血压计等方面。
附图说明
图1为现有技术中集成电路的一种封装结构。
图2为现有技术中MEMS压力传感器的典型封装结构。
图3为现有技术中惯性九轴传感器集成模块的LGA封装结构。
图4为现有技术中惯性九轴传感器集成模块的QFN封装结构。
图5为本发明的三维封装模块结构。
图6为具体实施例一的封装结构。
图7为本发明封装方法(具体实施例一为例)的流程图。
其中,图中的标记如下:1-上部结构;2-下封装体;3-金属层框架;4-塑封胶;5-中空型腔;6-芯片(以微机电芯片为例);7-填充胶;8-封合装置或封合盖;9-导电连接材料;10-封合材料或塑封胶;11-金属焊料;12-下封装体芯片;13-下封装体基板。
具体实施方式
本方案推出了MEMS模块产品的一种集成模式,在一个模块中形成上下两层的各类芯片与MEMS的叠层结构,上层以MEMS芯片集成为主,下层以IC芯片集成为主,上下两层之间以金属焊料连接保证电路信号连接,工艺方面有创新突破以实现制造过程的科学可控。
本发明中所述的导电连接性材料不限于金属焊料,无论用何种方式或材料组合,只要形成上部结构与下封装体之间至少有一个电连接,就属于本发明权利保护的范围。
本发明将为物联网及可穿戴装置提供一种新的核心构架,即将各类MEMS传感器芯片与各种集成电路芯片加以整合,开发出集成传感模块的新的产品构架与集成工艺,极易实现产品化。本产品结构新颖、工艺独特,采用传统的引线键合方式的三维封装就可实现模块集成,其成本低但产品附加值极高。本发明是一种创新型的具有普适性的三维封装方案,用于集成MEMS传感模块。该方案稳妥可行,制程与工艺简单可靠,很容易实现MEMS传感模块集成的产品化。可以针对各类MEMS传感器制造出个性化的集成产品投放市场,目前关注的本发明的产品化应用方向将集中于如应用于智能机器与可穿戴产品的多轴惯性传感系统集成产品、应用于汽车的TPMS胎压监测系统的传感集成产品、应用于智能手机与可穿戴产品的气压与高度计产品及微型血压计等方面。
下面结合附图对本发明的结构及工作过程作进一步说明。
如图5所示的三维封装结构,包括上部结构1与下封装体2,上部结构1包含有金属层框架3和芯片6(集成电路芯片和/或微机电芯片),金属层框架3与芯片6均设置于下封装体2上方,金属层框架3通过导电连接材料9与下封装体2形成电连接,芯片6放置于金属层框架3上表面或者下封装体2的上表面,芯片6通过电连接机构与金属层框架3形成电连接。
金属层框架3和/或芯片6的全部或部分被塑封胶4塑封。
塑封后的塑封体具有中空的型腔结构5。
中空的型腔结构内设置有填充胶7。
该三维封装结构包含有置于上方的封合装置或封合盖8。
金属层框架与下封装体之间除所述导电连接材料9外的缝隙部分被封合材料或者塑封胶10填充。
可以通过预制成型的方法先得到所述的金属层框架,也可以采用喷涂、溅射、电镀或其他方法直接在下封装体上方形成与其无缝隙接触的所述的金属层框架。
下封装体中包含一个或多个集成电路芯片和/或微机电芯片和/或其他元器件12。
具体实施例一
如图6所示,三维封装结构(以微机电芯片封装模块为例)包括下封装体2、金属层框架3(通过预制成型的方法得到)和两个芯片6(微机电芯片),金属层框架3与芯片6均设置于下封装体2上方,金属层框架3通过金属焊料11与下封装体2形成电连接,芯片6放置于金属层框架3上表面,芯片6通过电连接机构与金属层框架3形成电连接。金属层框架3被塑封胶4塑封,塑封后的塑封体具有中空的型腔结构5,该型腔结构内设置有填充胶7,该三维封装结构包含有置于上方的封合盖8,金属层框架与下封装体之间除所述金属焊料11外的缝隙部分被封合材料10填充。下封装体采用LGA(Land Grid Array)的封装形式,其中包含两个集成电路芯片12。
本实施例仅以两个集成电路芯片和两个微机电芯片为例进行说明,但不限于这些芯片,可根据不同的用户需求设置多个不同的芯片,而且可配置成不同的组合进行设置。
本方案所述封合装置不限于图中所示的盖板的形式,其他能够实现这种类似封合功能的各类装置均包括在内。
一种三维封装结构的封装方法(以微机电芯片封装模块为例),包括如下步骤(如图7):
步骤1、制作包含金属层框架的预塑封体(留有型腔);
步骤2、将预塑封体与已封装好的下封装体结合,形成预塑封体与下封装体的电连接;
步骤3、在预塑封体型腔内放置微机电芯片;
步骤4、形成芯片与金属层框架的电连接;
步骤5、在预塑封体型腔内设置填充胶;
步骤6、在预塑封体型腔上方设置封合盖,完成三维封装。
Claims (9)
1.一种三维封装结构,包括下封装体、金属层框架和芯片,其特征在于:所述的芯片为集成电路芯片和/或微机电芯片,金属层框架与芯片均设置于下封装体上方,金属层框架通过导电连接材料与下封装体形成电连接,芯片放置于金属层框架上表面或者下封装体的上表面,芯片通过电连接机构与金属层框架形成电连接。
2.根据权利要求1所述的三维封装结构,其特征在于:所述金属层框架和/或芯片的全部或部分被塑封胶塑封。
3.根据权利要求2所述的三维封装结构,其特征在于:所述的塑封后的塑封体具有中空的型腔结构。
4.根据权利要求3所述的三维封装结构,其特征在于:所述的中空的型腔结构内设置有填充胶。
5.根据权利要求1所述的三维封装结构,其特征在于:该三维封装结构包含有置于上方的封合装置或封合盖。
6.根据权利要求1所述的三维封装结构,其特征在于:所述金属层框架与下封装体之间除所述导电连接材料外的缝隙部分被封合材料或者塑封胶填充。
7.根据权利要求1所述的三维封装结构,其特征在于:所述的金属层框架可以通过预制成型的方法先得到,金属层框架也可采用喷涂、溅射、电镀或化学镀的方法直接在下封装体上方形成;下封装体与金属层框架实现无缝隙接触。
8.根据权利要求1所述的三维封装结构,其特征在于:所述下封装体中包含一个或多个集成电路芯片和/或微机电芯片和/或其他元器件。
9.一种基于权利要求1所述的三维封装结构封装方法,其特征在于:包括如下步骤:
步骤1、制作包含金属层框架的预塑封体(留有型腔);
步骤2、将预塑封体与已封装好的下封装体结合,形成预塑封体与下封装体的电连接;
步骤3、在预塑封体型腔内放置微机电芯片,并形成芯片与金属层框架的电连接;
步骤4、在预塑封体型腔内设置填充胶;
步骤5、在预塑封体型腔上方设置封合盖,完成三维封装。
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