CN106952966B - Gallium nitride Schottky diode and manufacturing method thereof - Google Patents
Gallium nitride Schottky diode and manufacturing method thereof Download PDFInfo
- Publication number
- CN106952966B CN106952966B CN201710073039.XA CN201710073039A CN106952966B CN 106952966 B CN106952966 B CN 106952966B CN 201710073039 A CN201710073039 A CN 201710073039A CN 106952966 B CN106952966 B CN 106952966B
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- nitride layer
- layer
- type
- schottky
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 128
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 94
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 28
- 239000002184 metal Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000005530 etching Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims description 15
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 abstract description 4
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 239000000969 carrier Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66143—Schottky diodes
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention relates to a gallium nitride Schottky diode which comprises a substrate, an N + gallium nitride layer, an N-gallium nitride layer table board and a P-type gallium nitride layer etched with a groove, wherein a Schottky metal layer used as an anode is formed on the P-type gallium nitride layer, and an ohmic metal layer used as a cathode is formed on the N + gallium nitride layer. The manufacturing method comprises the steps of sequentially growing an N + gallium nitride layer, an N-gallium nitride layer and a P-type gallium nitride layer on the upper surface of a substrate; forming a mesa with a P-type gallium nitride layer and an N-gallium nitride layer, and partially etching the P-type gallium nitride layer on each mesa to form a series of grooves; the Schottky metal layer is deposited on the P-type gallium nitride layer to serve as an anode, and the ohmic metal layer is deposited on the N + gallium nitride layer to serve as a cathode. The Schottky barrier structure can exhaust carriers under the Schottky electrode, improve the Schottky barrier height, reduce leakage current and increase breakdown voltage, and the groove under the Schottky electrode can reduce forward conduction voltage, so that the forward and reverse characteristics of the device are improved simultaneously.
Description
Technical Field
The invention relates to the field of semiconductors, in particular to a gallium nitride Schottky diode structure and a manufacturing method thereof.
Background
in the prior art, the structure of a gan schottky diode is shown in fig. 1: an N + gallium nitride layer 2 and an N-gallium nitride layer 3 are grown on a sapphire, silicon or silicon carbide substrate 1, the N-gallium nitride layer 3 is etched to the N + gallium nitride layer 2, a Schottky metal layer 5 is deposited on the N-gallium nitride layer 3 to serve as an anode, and an ohmic metal layer 6 is deposited on the N + gallium nitride layer 2 to serve as a cathode, so that the Schottky diode is formed.
the existing gallium nitride Schottky diode structure has the following defects: because intrinsic gallium nitride is N-type, and the doping in the growth process is limited to reduce the electron concentration in the N-type gallium nitride layer, the Schottky barrier height cannot be effectively increased to achieve the purposes of reducing leakage current and increasing breakdown voltage.
Disclosure of Invention
it is an object of the present invention to provide a gan schottky diode.
In order to achieve the purpose, the invention adopts the technical scheme that:
a gallium nitride Schottky diode comprises a substrate, an N + gallium nitride layer formed on the substrate, a table top formed on the N + gallium nitride layer and provided with an N-gallium nitride layer, and a P-type gallium nitride layer formed on the table top of the N-gallium nitride layer and etched with a groove, wherein a Schottky metal layer is formed on the P-type gallium nitride layer, an ohmic metal layer is formed on the N + gallium nitride layer, the Schottky metal layer forms an anode of the diode, and the ohmic metal layer forms a cathode of the diode.
preferably, the distance from the bottom of the groove to the N ~ gallium nitride layer is 0 ~ 50 nm.
preferably, the thickness of the P ~ type gallium nitride layer is 3nm ~ 3 um.
preferably, the P-type gallium nitride layer is provided with a plurality of grooves.
Another objective of the present invention is to provide a method for manufacturing a gan schottky diode.
In order to achieve the purpose, the invention adopts the technical scheme that:
a method for manufacturing a gallium nitride Schottky diode comprises the steps of growing an N + gallium nitride layer on the upper surface of a substrate, growing an N-gallium nitride layer on the upper surface of the N + gallium nitride layer, and growing a P-type gallium nitride layer on the upper surface of the N-gallium nitride layer; carrying out an etching process: forming mesas with a P-type gallium nitride layer and an N-gallium nitride layer, and etching part of the P-type gallium nitride layer on each mesa to form grooves; a Schottky metal layer is deposited on the P-type gallium nitride layer to serve as an anode, and an ohmic metal layer is deposited on the N + gallium nitride layer to serve as a cathode.
Preferably, when the etching process is performed: etching part of the P-type gallium nitride layer to form a groove, and then etching the P-type gallium nitride layer and the N-gallium nitride layer to the N + gallium nitride layer to form a table top.
Preferably, when the etching process is performed: etching the P-type gallium nitride layer and the N-gallium nitride layer to the N + gallium nitride layer to form a table top, and etching part of the P-type gallium nitride layer on the table top to form a groove.
further preferably, the P ~ type GaN layer is etched to a distance of 0 ~ 50nm from the N ~ GaN layer.
preferably, the growth thickness of the P ~ type gallium nitride layer is 3nm ~ 3 um.
preferably, the substrate is a sapphire, silicon or silicon carbide substrate.
Due to the application of the technical scheme, compared with the prior art, the invention has the following advantages and effects:
the structure of the invention can exhaust the current carrier under the Schottky electrode, thereby improving the Schottky barrier height, reducing the leakage current and increasing the breakdown voltage, and the groove structure under the Schottky electrode can reduce the forward conduction voltage, thereby simultaneously improving the forward and reverse characteristics of the device.
drawings
FIG. 1 is a schematic cross-sectional view of a GaN Schottky diode structure in the prior art;
FIG. 2 is a schematic diagram of step (I) in this embodiment;
FIG. 3 is a first schematic diagram of step (II) in this embodiment;
FIG. 4 is a second schematic diagram of step (II) in this embodiment;
Fig. 5 is a schematic cross-sectional view of the present embodiment.
Wherein: 1. a substrate; 2. an N + gallium nitride layer; 3. an N-gallium nitride layer; 4. a P-type gallium nitride layer; 40. a groove; 5. a Schottky metal layer; 6. an ohmic metal layer.
Detailed Description
The invention is further described below with reference to the accompanying drawings and examples:
As shown in fig. 5: a gallium nitride Schottky diode comprises a substrate 1, an N + gallium nitride layer 2 formed on the substrate 1, a table top formed on the N + gallium nitride layer 2 and provided with an N-gallium nitride layer 3, and a P-type gallium nitride layer 4 formed on the table top of the N-gallium nitride layer 3 and etched with a groove 40, wherein a Schottky metal layer 5 is formed on the P-type gallium nitride layer 4, an ohmic metal layer 6 is formed on the N + gallium nitride layer 2, the Schottky metal layer 5 forms an anode of the diode, and the ohmic metal layer 6 forms a cathode of the diode.
The following specifically describes a method for manufacturing the gan schottky diode, which includes the following steps:
growing an N + gallium nitride layer 2 on a sapphire, silicon or silicon carbide substrate 1, growing an N ~ gallium nitride layer 3 on the upper surface of the N + gallium nitride layer 2, and growing a P ~ type gallium nitride layer 4 of 3nm ~ 3um on the upper surface of the N ~ gallium nitride layer 3, as shown in figure 2;
performing dry etching on the P-type gallium nitride layer 4 and the N-gallium nitride layer 3 to form table tops and ensure that the P-type gallium nitride layer 4 on each table top is provided with the groove 40, as shown in figure 4;
or dry etching is carried out on the P ~ type gallium nitride layer 4 and the N ~ gallium nitride layer 3 to form a table top, the P ~ type gallium nitride layer 4 on the table top is etched to a distance of 30 ~ 50nm from the N ~ gallium nitride layer by a dry method to form a groove 40, a plurality of grooves 40 are etched, and the space width of the grooves is 0.1 ~ 10 um;
And (III) depositing a Schottky metal layer 5 on the P-type gallium nitride layer 4 as an anode and depositing an ohmic metal layer 6 on the N + gallium nitride layer 3 as a cathode to form the gallium nitride Schottky diode, as shown in FIG. 5.
The above embodiments are merely illustrative of the technical ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (8)
1. A gallium nitride schottky diode, comprising: the diode comprises a substrate, an N + gallium nitride layer formed on the substrate, a table top formed on the N + gallium nitride layer and provided with an N-gallium nitride layer, and a P-type gallium nitride layer formed on the table top of the N-gallium nitride layer, wherein a plurality of grooves are formed on the P-type gallium nitride layer by etching part of the P-type gallium nitride layer, a Schottky metal layer is formed on the P-type gallium nitride layer, an ohmic metal layer is formed on the N + gallium nitride layer, the Schottky metal layer forms the anode of the diode, and the ohmic metal layer forms the cathode of the diode.
2. the GaN Schottky diode according to claim 1, wherein the distance from the bottom of the trench to the N ~ GaN layer is 30 ~ 50 nm.
3. the Schottky diode with gallium nitride according to claim 1, wherein the thickness of the P ~ type gallium nitride layer is 3nm ~ 3 um.
4. A method for manufacturing a gallium nitride Schottky diode comprises the steps of growing an N + gallium nitride layer on the upper surface of a substrate and growing an N-gallium nitride layer on the upper surface of the N + gallium nitride layer, and is characterized in that: growing a P-type gallium nitride layer on the upper surface of the N-gallium nitride layer; carrying out an etching process: forming mesas with a P-type gallium nitride layer and an N-gallium nitride layer, and etching part of the P-type gallium nitride layer on each mesa to form a plurality of grooves; a Schottky metal layer is deposited on the P-type gallium nitride layer to serve as an anode, and an ohmic metal layer is deposited on the N + gallium nitride layer to serve as a cathode.
5. A method for manufacturing a gallium nitride Schottky diode comprises the steps of growing an N + gallium nitride layer on the upper surface of a substrate and growing an N-gallium nitride layer on the upper surface of the N + gallium nitride layer, and is characterized in that: growing a P-type gallium nitride layer on the upper surface of the N-gallium nitride layer; carrying out an etching process: etching part of the P-type gallium nitride layer to form a plurality of grooves, etching the P-type gallium nitride layer and the N-gallium nitride layer to the N + gallium nitride layer to form table tops, and ensuring that the P-type gallium nitride layer on each table top is provided with a plurality of grooves; a Schottky metal layer is deposited on the P-type gallium nitride layer to serve as an anode, and an ohmic metal layer is deposited on the N + gallium nitride layer to serve as a cathode.
6. the method of claim 4 or 5, wherein the P ~ type GaN layer is etched to a distance of 30 ~ 50nm from the N ~ GaN layer.
7. the method for manufacturing the GaN Schottky diode according to claim 4 or 5, wherein the growth thickness of the P ~ type GaN layer is 3nm ~ 3 um.
8. The method of claim 4 or 5, wherein the step of forming the Schottky diode comprises: the substrate is a sapphire, silicon or silicon carbide substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710073039.XA CN106952966B (en) | 2017-02-10 | 2017-02-10 | Gallium nitride Schottky diode and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710073039.XA CN106952966B (en) | 2017-02-10 | 2017-02-10 | Gallium nitride Schottky diode and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106952966A CN106952966A (en) | 2017-07-14 |
| CN106952966B true CN106952966B (en) | 2019-12-13 |
Family
ID=59465815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710073039.XA Active CN106952966B (en) | 2017-02-10 | 2017-02-10 | Gallium nitride Schottky diode and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106952966B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107492575B (en) * | 2017-08-28 | 2019-04-16 | 江苏能华微电子科技发展有限公司 | A kind of Schottky pole structure, Schottky diode and manufacturing method |
| CN114400246A (en) * | 2021-12-13 | 2022-04-26 | 晶通半导体(深圳)有限公司 | Reverse conducting high mobility transistor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895708A (en) * | 2016-05-28 | 2016-08-24 | 复旦大学 | GaN-based power diode and preparation method thereof |
| CN106024623A (en) * | 2016-06-29 | 2016-10-12 | 江苏能华微电子科技发展有限公司 | Gallium nitride schottky diode and manufacturing method thereof |
| CN106169417A (en) * | 2016-07-11 | 2016-11-30 | 厦门市三安集成电路有限公司 | A kind of silicon carbide power device of hetero-junctions terminal and preparation method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8969994B2 (en) * | 2012-08-14 | 2015-03-03 | Avogy, Inc. | Method of fabricating a gallium nitride merged P-i-N Schottky (MPS) diode by regrowth and etch back |
-
2017
- 2017-02-10 CN CN201710073039.XA patent/CN106952966B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105895708A (en) * | 2016-05-28 | 2016-08-24 | 复旦大学 | GaN-based power diode and preparation method thereof |
| CN106024623A (en) * | 2016-06-29 | 2016-10-12 | 江苏能华微电子科技发展有限公司 | Gallium nitride schottky diode and manufacturing method thereof |
| CN106169417A (en) * | 2016-07-11 | 2016-11-30 | 厦门市三安集成电路有限公司 | A kind of silicon carbide power device of hetero-junctions terminal and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106952966A (en) | 2017-07-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104362181B (en) | A kind of GaN heterojunction diodes device and preparation method thereof | |
| CN105845723B (en) | Enhanced GaN base high electron mobility transistor and preparation method thereof | |
| WO2018010545A1 (en) | Silicon carbide power device employing heterojunction termination, and manufacturing method thereof | |
| CN105720097A (en) | Enhanced-mode high electron mobility transistor, preparation method thereof, and semiconductor device | |
| CN110112207B (en) | Gallium oxide-based mixed PiN Schottky diode and preparation method thereof | |
| CN107978642B (en) | GaN-based heterojunction diode and preparation method thereof | |
| US20170033098A1 (en) | GaN-BASED SCHOTTKY DIODE RECTIFIER | |
| CN113644129B (en) | Reverse resistance type HEMT with step type P type GaN drain electrode structure | |
| CN106952966B (en) | Gallium nitride Schottky diode and manufacturing method thereof | |
| CN115775730B (en) | GaN Schottky diode with quasi-vertical structure and preparation method thereof | |
| CN110364574B (en) | AlGaN/GaN heterojunction Schottky diode device based on P-GaN cap layer and floating metal ring | |
| CN111276533B (en) | Transistor structure with selective area groove grid GaN current aperture vertical structure and implementation method | |
| CN208478345U (en) | A kind of high current low forward voltage drop SiC schottky diode chip | |
| CN108231912B (en) | GaN-based JBS and super junction mixed structure diode and manufacturing method thereof | |
| CN116230750A (en) | Vertical step field plate high-voltage GaN-based diode and manufacturing method thereof | |
| CN115863446A (en) | GaN-based heterojunction diode and preparation method thereof | |
| US9466552B2 (en) | Vertical semiconductor device having a non-conductive substrate and a gallium nitride layer | |
| CN112071918A (en) | SiC groove MPS diode and manufacturing method thereof | |
| CN111785785A (en) | SBD device structure and preparation method thereof | |
| CN111029410A (en) | Diode with junction barrier Schottky structure and manufacturing method thereof | |
| CN115881827B (en) | Nickel oxide/gallium oxide heterojunction diode based on whole wafer and preparation method | |
| CN205911315U (en) | GaN base schottky diode who mixes positive pole electrode structure | |
| CN113299766B (en) | GaN quasi-vertical structure diode and preparation method thereof | |
| CN111509033B (en) | Polarization-doped SBD diode and preparation method thereof | |
| WO2021023228A1 (en) | Semiconductor device and method for manufacturing same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |