CN106946583B - 一种铝碳化硅一体式基板的制备方法 - Google Patents

一种铝碳化硅一体式基板的制备方法 Download PDF

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CN106946583B
CN106946583B CN201710225656.7A CN201710225656A CN106946583B CN 106946583 B CN106946583 B CN 106946583B CN 201710225656 A CN201710225656 A CN 201710225656A CN 106946583 B CN106946583 B CN 106946583B
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aluminum
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张伟
刘波波
杨晓青
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Xi'an Mingke Microelectronic Material Co ltd
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Abstract

本发明公开了一种铝碳化硅一体式基板的制备方法，先制备铝碳化硅材料，然后在所述铝碳化硅材料上镶嵌氧化铝/氮化铝陶瓷，通过铸造工艺将所述碳化硅材料和氧化铝/氮化铝陶瓷制成一体式铝碳化硅基板；然后平整所述铝碳化硅基板陶瓷表面，通过表面处理在所述铝碳化硅基板上覆铜，覆铜工艺条件为：调节气体温度为100℃～500℃，压力为4.8MPa～5.2MPa，气体流速300～1200m/s的条件下使用喷枪向所述铝碳化硅基板陶瓷覆铜。通过铸造一次成型制备碳化硅和氮化铝/氧化铝一体式基板，结合强度高，表面易加工，解决铝碳化硅可焊性差的问题，减少焊接工序，降低生产成本。

Description

一种铝碳化硅一体式基板的制备方法
技术领域
本发明属于铝碳化硅基板生产技术领域，具体涉及到一种铝碳化硅一体式基板的制备方法。
背景技术
随着大功率时代的到来，对电子元器件的稳定性要求越来越高。目前市场多用的铝碳化硅基板都是焊接陶瓷及铜板的方式来实现电子元器件的使用。本发明的优点在于减少焊接工序，解决铝碳化硅可焊性差的问题，提高生产效率，降低生产成本。大大提高铝碳化硅基板的使用范围。
发明内容
本发明所要解决的技术问题在于针对上述现有技术中的不足，提供一种铝碳化硅一体式基板的制备方法，目的在于解决铝碳化硅可焊性差的问题，减少焊接工序，降低生产成本。
本发明采用以下技术方案：
一种铝碳化硅一体式基板的制备方法，包括以下步骤：
S1、先制备铝碳化硅材料，然后在所述铝碳化硅材料上镶嵌氧化铝/氮化铝陶瓷，通过铸造工艺将所述碳化硅材料和氧化铝/氮化铝陶瓷制成一体式铝碳化硅基板；
S2、平整步骤S1制备的所述铝碳化硅基板表面，通过表面处理在所述铝碳化硅基板上覆铜，覆铜工艺条件为：调节气体温度为100℃～500℃，压力为4.8MPa～5.2MPa，气体流速300～1200m/s的条件下使用喷枪向所述铝碳化硅基板陶瓷覆铜。
优选的，步骤S1中，所述铝碳化硅材料的制备方法如下：
S101、混料：将碳化硅粉料和高岭土原料搅拌混合，得到混合料，其中高岭土重量占混合料重量比为1％～10％；
S102、配胶：按照聚乙烯醇与羧甲基纤维素钠的质量比6：2混合配胶，配好的所述胶体的体积浓度为10％；
S103、造粒：将步骤S101得到的混和料和步骤S102得到的所述胶体按质量比5:2混合制成待用料；
S104、干压：将步骤S103制备的所述待用料在压力16MPa下，保压3s加工成碳化硅；
S105、烧结：调节高温烧结炉内温度至300℃～1200℃，烧结制成碳化硅陶瓷；
S106、浸渗：将所述碳化硅陶瓷放入真空炉内，加压10MPa，将铝液压入碳化硅陶瓷基体内，制成所述铝碳化硅材料。
优选的，步骤S1中，所述氧化铝/氮化铝陶瓷的厚度为0.1～2.0mm。
优选的，步骤S1中，在所述铝碳化硅材料上镶嵌氧化铝/氮化铝陶瓷的具体过程如下为：先在制备好的所述铝碳化硅材料的陶瓷预制型上按照放置氧化铝/氮化铝陶瓷的位置机加出型腔，将氧化铝/氮化铝陶瓷放入所述预制型腔中；进行浸渗，然后去除氧化铝/氮化铝陶瓷上的残留铝层。
优选的，镶嵌的所述氧化铝/氮化铝陶瓷粗糙度大于1.6。
优选的，步骤S2中，在所述铝碳化硅基板上覆铜之前，先覆一层铝层，所述铝层厚度为10～20微米。
优选的，步骤S2中，所述覆铜层的厚度为10～1000微米。
优选的，所述覆铜层的厚度为300微米。
优选的，步骤S2中，所述覆铜工艺的调节温度为200～300℃，压力为5.0MPa。
优选的，所述喷枪距离所述铝碳化硅基板陶瓷的距离为2～50mm。
与现有技术相比，本发明至少具有以下有益效果：
本发明在铝碳化硅材料上先镶嵌氧化铝/氮化铝陶瓷，然后通过铸造工艺使铝碳化硅和氧化铝/氮化铝陶瓷形成一体式基板，然后通过加工处理使铝碳化硅基板表面达到一定平整度，通过表面处理在铝碳化硅基板上覆铜，厚度10-1000微米，该工艺的优点是通过铸造一次成型制备铝碳化硅和氮化铝/氧化铝一体式基板，结合强度高，表面易加工，解决铝碳化硅可焊性差的问题，减少焊接工序，降低生产成本。
进一步的，铝碳化硅材料作为第三代电子封装材料是现代高科技的杰作，是专业技术人员根据电子应用而有的放矢的新型复合材料，具有优异的性能和低廉的成本，在电子封装领域被誉为“封装之王”。
进一步的，氮化铝/氧化铝的陶瓷厚度是根据电子封装材料具体使用尺寸来决定的，目前实际使用中氧化铝/氮化铝陶瓷的厚度在0.1-2mm便能满足绝缘性能等性能要求。
进一步的，铝碳化硅基板上镶嵌上氧化铝/氮化铝陶瓷之后直接做成一体式基板，无需再在基板上焊接氧化铝/氮化铝覆铜板，这样不仅可以减少焊接工序，降低成本，而且大大扩宽了铝碳化硅基板的使用范围。
进一步的，单纯的在氧化铝/氮化铝陶瓷基板上覆铜的结合力是较差的，因为氮化铝/氧化铝和铜层之间少有冶金结合，只存在机械结合，结合力不能满足要求。先在氮化铝/氧化铝上覆层铝的原因是铝层和氧化铝/氮化铝陶瓷层能较好的结合在一起，之后再覆铜的话，相当于铜层是和铝层结合在一起的，采用这种方式能形成良好的结合力。
下面通过附图和实施例，对本发明的技术方案做进一步的详细描述。
附图说明
图1为本发明制备的铝碳化硅镶嵌式基板结构示意图。
其中：1.覆铜层；2.铝层；3.氧化铝/氮化铝陶瓷；4.铝碳化硅基板。
具体实施方式
现有技术覆铜多采用DBC或者DPC，DBC工艺是将铜直接键合在基材上，温度一般在1000°左右，而铝碳化硅根部承受不了这么高的覆铜温度。而DPC工艺是真空镀膜技术，虽然覆铜温度较低，但是覆铜厚度有限，一般覆铜几十微米。
请参阅图1，本发明公开了一种铝碳化硅一体式基板的制备方法，制备的所述铝碳化硅镶嵌式基板从下至上依次为铝碳化硅基板4、氧化铝/氮化铝陶瓷3、铝层2和覆铜层1，具体制备过程如下：
S1、先制备铝碳化硅材料，然后在所述铝碳化硅材料上镶嵌氧化铝/氮化铝陶瓷，通过铸造工艺将所述碳化硅材料和氧化铝/氮化铝陶瓷制成一体式铝碳化硅基板4，然后机械加工，电镀至规定要求；
优选的，所述氧化铝/氮化铝陶瓷3的厚度为0.1～2mm。
S11、先制备铝碳化硅基板的材料铝碳化硅，具体步骤如下：
(1)混料：将碳化硅粉料和高岭土原料搅拌混合，得到混合料，其中高岭土重量占混合料重量比为1～10％；
(2)配胶：按照聚乙烯醇PVA与羧甲基纤维素钠CMC的质量比为6：2混合配胶，最后配好的胶体的体积浓度为10％；
(3)造粒：将步骤(1)得到的混合料和步骤(2)得到的胶体按质量比5:2混合在一起；
(4)干压：压力为16MPa，保压3s加工出要求规格尺寸的碳化硅；
(5)烧结：高温烧结炉内调节温度至300～1200℃，烧结出碳化硅陶瓷；
(6)浸渗：将所述的碳化硅陶瓷放入真空炉内，加压10MPa，将铝液压入碳化硅陶瓷基体内，制成所述铝碳化硅材料。
S12、在所述铝碳化硅基板4上镶嵌氧化铝/氮化铝陶瓷3，具体如下：
S121、在制备好的铝碳化硅材料的预制型上按照放置氧化铝/氮化铝陶瓷的位置机加出型腔，浸渗之前将氧化铝/氮化铝陶瓷放入预制型腔中；
S122、浸渗完成后去除氧化铝/氮化铝陶瓷上的残留铝层。
优选的，镶嵌的氧化铝/氮化铝陶瓷粗糙度大于1.6。
S2、在所述铝碳化硅基板陶瓷上覆一层覆铜层1，覆铜工艺条件为：调节气体温度为100～500℃，压力为4.8～5.2MPa，气体流速300～1200m/s的条件下通过喷枪向铝碳化硅基板陶瓷上覆铜，覆铜层1厚度10～1000微米。
优选的，在陶瓷上覆铜之前，先向陶瓷上覆一层铝层2，铝层2的厚度为10～20微米。
优选的，覆铜工艺的调节温度为200～300℃，压力为5.0MPa，覆铜层1的厚度为300微米。喷枪距离铝碳化硅基板陶瓷为2～50mm。
本发明提供的方法，既能满足覆铜的温度，又能保证覆铜的质量，覆铜工艺条件为气体温度为100～500℃压力为4.8～5.2MPa，气体流速300～1200m/s的条件下通过喷枪向铝碳化硅基板陶瓷上覆铜，覆铜厚度50～300微米。此时铜和铝层形成良好的接触，不仅有机械结合，而且也有冶金结合。
以上内容仅为说明本发明的技术思想，不能以此限定本发明的保护范围，凡是按照本发明提出的技术思想，在技术方案基础上所做的任何改动，均落入本发明权利要求书的保护范围之内。

Claims (8)

1.一种铝碳化硅一体式基板的制备方法，其特征在于，包括以下步骤：
S1、先制备铝碳化硅材料，然后在铝碳化硅材料上镶嵌氧化铝/氮化铝陶瓷，通过铸造工艺将铝碳化硅材料和氧化铝/氮化铝陶瓷制成一体式铝碳化硅基板，在铝碳化硅材料上镶嵌氧化铝/氮化铝陶瓷的具体过程如下：
先在制备好的铝碳化硅材料的陶瓷预制型上按照放置氧化铝/氮化铝陶瓷的位置机加出型腔，将氧化铝/氮化铝陶瓷放入所述预制型腔中；进行浸渗，然后去除氧化铝/氮化铝陶瓷上的残留铝层；
S2、平整步骤S1制备的铝碳化硅基板表面，通过表面处理在铝碳化硅基板上覆铜，覆铜工艺条件为：调节气体温度为100℃~500℃，压力为4.8MPa~5.2MPa，气体流速300~1200m/s的条件下使用喷枪向铝碳化硅基板陶瓷覆铜，在铝碳化硅基板上覆铜之前，先覆一层厚度为10~20微米的铝层。
2.根据权利要求1所述的一种铝碳化硅一体式基板的制备方法，其特征在于，步骤S1中，铝碳化硅材料的制备方法如下：
S101、混料：将碳化硅粉料和高岭土原料搅拌混合，得到混合料，其中高岭土重量占混合料重量比为1%~10%；
S102、配胶：按照聚乙烯醇与羧甲基纤维素钠的质量比6：2混合配胶，配好的胶体的体积浓度为10%；
S103、造粒：将步骤S101得到的混合料和步骤S102得到的胶体按质量比5:2混合制成待用料；
S104、干压：将步骤S103制备的待用料在压力16MPa下，保压3s加工成碳化硅；
S105、烧结：调节高温烧结炉内温度至300~1200℃，烧结制成碳化硅陶瓷；
S106、浸渗：将所述碳化硅陶瓷放入真空炉内，加压10MPa，将铝液压入碳化硅陶瓷基体内，制成所述铝碳化硅材料。
3.根据权利要求1所述的一种铝碳化硅一体式基板的制备方法，其特征在于，步骤S1中，所述氧化铝/氮化铝陶瓷的厚度为0.1~2.0mm。
4.根据权利要求1所述的一种铝碳化硅一体式基板的制备方法，其特征在于：步骤S1中，镶嵌的所述氧化铝/氮化铝陶瓷粗糙度大于1.6。
5.根据权利要求1所述的一种铝碳化硅一体式基板的制备方法，其特征在于：步骤S2中，所述覆铜层的厚度为10~1000微米。
6.根据权利要求5所述的一种铝碳化硅一体式基板的制备方法，其特征在于：所述覆铜层的厚度为300微米。
7.根据权利要求1所述的一种铝碳化硅一体式基板的制备方法，其特征在于：步骤S2中，所述覆铜工艺的调节温度为200~300℃，压力为5.0MPa。
8.根据权利要求7所述的一种铝碳化硅一体式基板的制备方法，其特征在于：所述喷枪距离所述铝碳化硅基板陶瓷的距离为2~50mm。
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