CN112624741A - 一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法 - Google Patents

一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法 Download PDF

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CN112624741A
CN112624741A CN202110089880.4A CN202110089880A CN112624741A CN 112624741 A CN112624741 A CN 112624741A CN 202110089880 A CN202110089880 A CN 202110089880A CN 112624741 A CN112624741 A CN 112624741A
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王美玲
邹婉如
邹文革
于利学
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Weihai Yuanhuan Advanced Ceramics Co ltd
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Abstract

本发明公开了一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,包括复合材料的配方,氧化镁陶瓷采用高纯度轻质氧化镁为原料,高纯度的氧化钇、氧化铝以及氧化钛的一种或多种混合为添加剂制备而成,其中氧化镁纯度>99wt%,添加剂组成成分如下:0‑3wt%的分散剂、0‑15wt%的助溶剂,配制流延浆料:将研磨后的氧化镁粉体、烧结助剂氧化钇、氧化铝、氧化钛按比例加入到球磨罐中,再依次加入增塑剂、分散剂、高纯乙醇溶剂和有机胶,球磨12~80小时;本发明具有选用了增塑剂和高效粘结剂,优化了流延成型工艺参数,控制好陈腐处理时的黏度、流延机的刮刀高度、流延速度、干燥室温度等工艺参数,使得流延成型膜可控和满足需要,提高了生产效率和降低了生产成本的优点。

Description

一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法
技术领域
本发明涉及结构陶瓷及高端装备的新材料应用技术领域,具体为一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法。
背景技术
流延成型,又称带式浇注、涂布法,通常是指氧化镁陶瓷浆料在一定压力下,通过浆料与刮刀以一定速度运行的膜带之间的缝隙而流延在PET膜上,再经烘干、切边,然后把流延膜与PET膜进行分离,在生产氧化镁陶瓷承烧板生坯时,为了生产厚度大于0.5mm的氧化镁陶瓷承烧板生坯,需要制备多层叠片或者单层,使厚度达到0.7mm的氧化镁陶瓷承烧板生坯。
氧化镁陶瓷属于立方晶系,熔点2800°C左右,莫氏硬度为5-6,高温下比体积电阻值较高,有良好的绝缘性,氧化镁陶瓷的高温稳定性、耐腐蚀性能优于氧化铝陶瓷,可以在强碱金属腐蚀性环境下使用,此外,氧化镁与许多金属接触时不发生化学反应,在惰性气氛中,温度可达2000°C,因此,氧化镁热电偶保护管、承烧板和坩埚等都可用于熔炼各种高温合金和陶瓷而不污染制品,市场前景广阔;
高纯度氧化镁陶瓷具有耐高温、耐腐蚀等优点,但高纯度氧化镁陶瓷较难致密烧结,使用高纯度氧化镁原料,堆积密度低、反应活性强,使得制粉、成型困难,特别是制备高致密度大尺寸承烧板容易产生变形、开裂、针孔、坯浆不干、厚度一致性差等质量缺陷,本发明所要解决的问题在于提供能够用流延成型直接制备出需要厚度的氧化镁陶瓷承烧板生坯,克服技术缺陷:所以更加需要一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法。
发明内容
本发明的目的在于提供一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,具有选用了增塑剂和高效粘结剂,优化了流延成型工艺参数,控制好陈腐处理时的黏度、流延机的刮刀高度、流延速度、干燥室温度等工艺参数,使得流延成型膜可控和满足需要,提高了生产效率和降低了生产成本的优点,解决了现有技术中的问题。
为实现上述目的,本发明提供如下技术方案:一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,包括复合材料的配方,该氧化镁陶瓷采用高纯度轻质氧化镁为原料,高纯度的氧化钇、氧化铝以及氧化钛的一种或多种混合为添加剂制备而成,其中氧化镁纯度>99wt%。
优选的,所述添加剂组成成分如下:0-3wt%的分散剂、0-15wt%的助溶剂。
优选的,所述其制备方法如下:
(1)配制流延浆料:将研磨后的氧化镁粉体、烧结助剂氧化钇、氧化铝、氧化钛按比例加入到球磨罐中,再依次加入增塑剂、分散剂、高纯乙醇溶剂和有机胶,球磨12~80小时;
(2)脱泡陈腐:将步骤(1)中处理好的流延浆料在105Pa的负压环境下进行真空脱泡,并进行5~45小时陈腐处理,控制黏度在8000~13000cps;
(3)流延成型:用流延机对步骤(2)中处理好的流延浆料流延成型;
(4)流延成型时,控制刮刀高度为0.4~2.8mm,流延带速为0.1~0.5m/分,流延机的干燥室温度为30~180°C。
优选的,所述增塑剂为邻苯二甲基二丁酯(DBP)和松香。
优选的,所述粘结剂为聚乙烯醇缩丁醛(PVB),所述高纯乙醇溶剂为无水乙醇。
优选的,所述烧助结剂为氧化钇、氧化铝和氧化钛,所述烧助结剂的加入量占氧化镁粉体的质量百分比为0.2%-2.3%。
优选的,所述分散剂为柠檬酸盐所述分散剂的加入量占氧化镁粉体的质量百分比为0.5%-1.5%。
优选的,所述增塑剂、粘结剂、分散剂和高纯乙醇溶剂各占氧化镁粉体的质量百分比分别为4%-7%,3%-7%,0.5-1%和40%-60%。
与现有技术相比,本发明的有益效果如下:
本一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法通过精细研磨,粒径较小和比表面积较高的氧化镁粉体,制成浆料时需要加入粘结剂和增塑剂的量较多,导致浆料有机组分较多;浆料适合的固含量;为了降低烧结温度,需要添加氧化钇作为助溶剂;需要对氧化镁陶瓷粉体进行预烧结后,开始作为氧化镁粉体原料使用;由于选用了增塑剂和高效粘结剂,优化了流延成型工艺参数,控制好陈腐处理时的黏度、流延机的刮刀高度、流延速度、干燥室温度等工艺参数,使得流延成型膜可控和满足需要,提高了生产效率,降低了生产成本。
具体实施方式
下面将对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例,基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例1:
一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,包括复合材料的配方,该氧化镁陶瓷采用高纯度轻质氧化镁为原料,高纯度的氧化钇、氧化铝以及氧化钛的一种或多种混合为添加剂制备而成,其中氧化镁纯度> 99wt%,添加剂组成成分如下:0-3wt%的分散剂、0-15wt%的助溶剂;
(1)将原料粉体按照一定比例组成称量,混合均匀,按照每Kg混合粉体加入0.5-3mL的研磨液和1/2重量的研磨球介质,湿磨混料2-40小时,得到均匀混合的陶瓷浆料;
(2)将陶瓷浆料进行干燥、造粒,获得流动性好、颗粒尺寸为5-500Pm、堆积密度,0.5-1.5g/cm3的陶瓷粉体,二次烧结是先以1300度温度烧结后再次研磨;
(3)将所得陶瓷叠压成型的毛坯,再采用温等静压100-300MPa压力下保压1-20分钟成型,并按照需要进行预加工处理;
(4)将陶瓷坯体在高温烧结炉中按照特定烧结制度高温烧结获得氧化镁陶瓷。
实施例2:
一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,包括复合材料的配方,该氧化镁陶瓷采用高纯度轻质氧化镁为原料,高纯度的氧化钇、氧化铝以及氧化钛的一种或多种混合为添加剂制备而成,其中氧化镁纯度> 99wt%,添加剂组成成分如下:0-3wt%的分散剂、0-15wt%的助溶剂;
1、称取100g纯度>99%的高纯氧化镁粉体、2.5g氧化钇粉体,加入氮化硅陶瓷磨介球100g,以350转/分的转速球磨10小时,获得D50---0.7um的氧化镁浆料;
2、将所得浆料使用流延机流延成膜,然后温等静压250MPa处理,所得承烧板坯片在1500°C烧结200分钟,升降温速率为10°C /min,得到致密氧化镁陶瓷承烧板生坯,其氧化镁陶瓷承烧板生坯纯度>99%、致密度为3.5g。实施例3:一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,包括复合材料的配方,该氧化镁陶瓷采用高纯度轻质氧化镁为原料,高纯度的氧化钇、氧化铝以及氧化钛的一种或多种混合为添加剂制备而成,其中氧化镁纯度>99wt%,添加剂组成成分如下:0-3wt%的分散剂、0-15wt%的助溶剂;
(1)将原料粉体按照一定的比例组成称量,混合均匀,按照每Kg混合粉体加入0.5-3mL的研磨溶剂和搅拌浆料1/2重量的磨介球,湿磨混料2-40小时,得到均匀混合的陶瓷浆料;
(2)脱泡陈腐:出料到脱泡缸,在5×105Pa的负压环境下进行真空脱泡,控制浆料粘度在13000cps,陈腐15小时;
(3)将所得陶瓷浆料流延成型获得陶瓷膜,再按一定规格进行切片、叠片后,在100-300MPa压力下温等静压保压1-20分钟成型,并进行预加工处理。
温等静压的成型毛坯,在高温烧结炉中按照特定烧结制度高温脱胶、脱脂、烧结获得氧化镁陶瓷承烧板生坯,烧结曲线和烧结工艺为:以1°C /min-30°c /min的升温速率从室温升温到300-500°C保温0-150分钟,以1°C /min-30°c /min的升温速率升温到500°C -1300°C,保温0-150分钟,以1°C /min-15°C /min的升温速率升温到1300-1900°C保温1-13小时,然后以1°C /min-30°C /min降温速率冷却至室温,所制备的氧化镁陶瓷承烧板生坯成品率高、致密度好,厚度合适的话,会有一定的半透明度或透光性,以上表述的为本发明流延成型制备氧化镁陶瓷承烧板生坯的方法的实施例子,不能以此来限定本发明之权利范围,因此本发明申请专利范围所作的等同变化,仍属本发明所涵盖的范围。
本发明:通过复合材料的配方,该氧化镁陶瓷采用高纯度轻质氧化镁为原料,高纯度的氧化钇、氧化铝以及氧化钛的一种或多种混合为添加剂制备而成,其中氧化镁纯度>99wt%,添加剂组成成分如下:0-3wt%的分散剂、0-15wt%的助溶剂,配制流延浆料:将研磨后的氧化镁粉体、烧结助剂氧化钇、氧化铝、氧化钛按比例加入到球磨罐中,再依次加入增塑剂、分散剂、高纯乙醇溶剂和有机胶,球磨12~80小时;脱泡陈腐:将步骤上述中处理好的流延浆料在105Pa的负压环境下进行真空脱泡,并进行5~45小时陈腐处理,控制黏度在8000~13000cps;流延成型:用流延机对步骤上述中处理好的流延浆料流延成型;流延成型时,控制刮刀高度为0.4~2.8mm,流延带速为0.1~0.5m/分,流延机的干燥室温度为30~180°C;具有选用了增塑剂和高效粘结剂,优化了流延成型工艺参数,控制好陈腐处理时的黏度、流延机的刮刀高度、流延速度、干燥室温度等工艺参数,使得流延成型膜可控和满足需要,提高了生产效率和降低了生产成本的优点。
以上显示和描述了本发明的基本原理和主要特征和本发明的优点,对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明;因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是上述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。
此外,应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当组合,形成本领域技术人员可以理解的其他实施方式。

Claims (8)

1.一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,其特征在于:包括复合材料的配方,该氧化镁陶瓷采用高纯度轻质氧化镁为原料,高纯度的氧化钇、氧化铝以及氧化钛的一种或多种混合为添加剂制备而成,其中氧化镁纯度> 99wt%。
2.根据权利要求1所述的一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,其特征在于:所述添加剂组成成分如下:0-3wt%的分散剂、0-15wt%的助溶剂。
3.根据权利要求1所述的一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,其特征在于:所述制备方法如下:
(1)配制流延浆料:将研磨后的氧化镁粉体、烧结助剂氧化钇、氧化铝、氧化钛按比例加入到球磨罐中,再依次加入增塑剂、分散剂、高纯乙醇溶剂和有机胶,球磨12~80小时;
(2)脱泡陈腐:将步骤(1)中处理好的流延浆料在105Pa的负压环境下进行真空脱泡,并进行5~45小时陈腐处理,控制黏度在8000~13000cps;
(3)流延成型:用流延机对步骤(2)中处理好的流延浆料流延成型;
(4)流延成型时,控制刮刀高度为0.4~2.8mm,流延带速为0.1~0.5m/分,流延机的干燥室温度为30~180°C。
4.根据权利要求3所述的一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,其特征在于:所述增塑剂为邻苯二甲基二丁酯(DBP)和松香。
5.根据权利要3所述的一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,其特征在于:所述粘结剂为聚乙烯醇缩丁醛(PVB),所述高纯乙醇溶剂为无水乙醇。
6.根据权利要求3所述的一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,其特征在于:所述烧助结剂为氧化钇、氧化铝和氧化钛,所述烧助结剂的加入量占氧化镁粉体的质量百分比为0.2%-2.3%。
7.根据权利要求3所述的一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,其特征在于:所述分散剂为柠檬酸盐所述分散剂的加入量占氧化镁粉体的质量百分比为0.5%-1.5%。
8.根据权利要求3所述的一种流延成型制备高纯氧化镁陶瓷承烧板生坯的方法,其特征在于:所述增塑剂、粘结剂、分散剂和高纯乙醇溶剂各占氧化镁粉体的质量百分比分别为4%-7%,3%-7%,0.5-1%和40%-60%。
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CN116608647A (zh) * 2023-05-24 2023-08-18 江苏富乐华功率半导体研究院有限公司 一种氮化硅生坯的干燥方法

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CN115093201A (zh) * 2022-07-11 2022-09-23 江苏富乐华功率半导体研究院有限公司 一种砂磨机与球磨机联用制备陶瓷浆料的方法
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CN116608647B (zh) * 2023-05-24 2024-04-09 江苏富乐华功率半导体研究院有限公司 一种氮化硅生坯的干燥方法

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