CN106935639B - 光触发可控硅器件 - Google Patents
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Abstract
本发明涉及一种光触发可控硅器件，其中包括N型衬底，N型衬底上设置有第一P型基区、第二P型基区、第三P型基区以及P‑型注入区；第二P型基区以及第三P型基区设置于P‑型注入区的两侧，且P‑型注入区分别与第二P型基区以及第三P型基区相连接；第一P型基区设置于第二P型基区的与P‑型注入区相对的一侧；第三P型基区上设置有第一N+注入区，且第一N+注入区位于第三P型基区内且靠近P‑型注入区的一侧；第一N+注入区与第二P型基区相连接；N型衬底的四周设置有第二N+型注入区。采用该种结构的光触发可控硅器件，触发电流小，结构简单，占用版图面积小，隔离电压高，应用范围广泛。
Description
技术领域
本发明涉及半导体领域，尤其涉及集成电路，具体是指一种光触发可控硅器件。
背景技术
在日常应用中，通常需要用低压的逻辑电平来控制高压的功率输出，它们之间需要良好地隔离。
由于光耦合器输入输出间互相隔离，电信号传输具有单向性等特点，因而具有良好的电绝缘能力和抗干扰能力。
光耦合器一般由三部分组成：光的发射、光的接收及信号放大。输入的电信号驱动发光二极管(LED)，使之发出一定波长的光，被光探测器接收而产生光电流，再经过进一步放大后输出。这就完成了电—光—电的转换，从而起到输入、输出、隔离的作用。
图1中所示电路为光耦合器构成的可控硅开关电路。可控硅SCR的触发电压取自电阻R，其大小由通过光电三极管的电流决定，直接由输入电压控制。该电路简单，控制端与输出端有可靠的电隔离，它可以实现较大电流的功率输出。
现有技术采用纵向的方式实现，这种方式往往工艺比较复杂，成本较高。同时，由于没有电阻R，使得触发电流较大，抗干扰能力差。
发明内容
本发明的目的是克服了上述现有技术的缺点，提供了一种利用NPN管基区感光触发、触发电流小、导通电阻小、结构简单、占用版图面积小、隔离电压高的光触发可控硅器件。
为了实现上述目的，本发明的光触发可控硅器件具有如下构成：
该光触发可控硅器件，其主要特点是，所述的器件包括N型衬底，所述的N型衬底上设置有第一P型基区a、第二P型基区b、第三P型基区c以及P-型注入区；所述的第二P型基区b以及所述的第三P型基区c设置于所述的P-型注入区的两侧，且所述的P-型注入区分别与所述的第二P型基区b以及所述的第三P型基区c相连接；所述的第一P型基区a设置于所述的第二P型基区b的与所述的P-型注入区相对的一侧；
所述的第三P型基区c上设置有第一N+注入区N+a，且所述的第一N+注入区N+a位于所述的第三P型基区c内且靠近所述的P-型注入区的一侧；所述的第一N+注入区N+a与所述的第二P型基区b相连接；
所述的N型衬底的四周设置有第二N+型注入区N+b。
进一步地，所述的第一P型基区a与电学阳极相连接，所述的第二P型基区b与电学阴极相连接，所述的第三P型基区c为用以接受光照后产生光电流的感光区。
进一步地，所述的第一N+注入区N+a与所述的第二P型基区b通过铝层相连接。
采用了该发明中的光触发可控硅器件，与现有技术相比，具有以下有益的技术效果：
(1)本发明中的光触发可控硅器件触发电流小，结构简单，占用版图面积小，隔离电压高的优点。
(2)本发明为了实现高的隔离电压及降低封装难度，感光芯片与发光LED封装在一个平面上，且感光区位于芯片边缘，光敏度高。
附图说明
图1为现有技术中的光敏可控硅剖面图。
图2为本发明的光触发可控硅器件的剖面图。
图3为图2所示的光敏可控硅器件的俯视图。
图4为图2所示的光敏可控硅器件的等效电路图。
具体实施方式
为了能够更清楚地描述本发明的技术内容，下面结合具体实施例来进行进一步的描述。
本发明的光触发可控硅器件将P型扩散层设置在N型衬底上，将一块N型扩散层设计置在其中一块P型扩散层中。当红外光照射到P型扩散层时，将可控硅触发导通。本发明可控硅利用NPN管基区感光触发，触发电流小，导通电阻小，结构简单，占用版图面积小，隔离电压高。
如图2和图3所示，该可控硅结构包含4层结构，其中底层为N-型衬底。第二层为设于N-衬底上的基区a、基区b及基区c。第三层为设于N-衬底上的P-区(电阻R)，如图4所示，P-区设于基区b与基区c之间，并且与基区b与基区c相连接。第四层为N+层，其中N+a层设于基区c中并且布置于靠近电阻R的一侧，N+b层设于衬底N-层上。N+b层设于整个芯片的外围。
N+a与基区b通过铝线相连。
在该中结构中，基区a通过接触孔与铝层相连，并且被大面积的铝层所覆盖。N+a与基区b通过铝线相连，并且被大面积的铝层所覆盖，同时，这层铝也将基区c的四周覆盖。基区c中心没有被铝覆盖，它将作为感光区。
该结构中，基区a相当于整个结构的阳极。N+a与基区b通过铝线相连，相当于整个结构的阴极。
该结构中，如图3和图4所示，基区a相当于PNP1管及PNP2管的发射极；基区b相当于PNP2管的集电极；衬底相当于PNP1管及PNP2管的基极，同时也是NPN管的集电极；基区c相当于NPN管的基极，同时也是PNP2管的集电极；N+a相当于NPN管的发射极；P-区相当于电阻R，它的两端与NPN管的基极及PNP1管的集电极相连。
当感光区被红外光照射，将生成光生载流子。光生载流子流经电阻，使得NPN管的基极电位升高，引发NPN管导通，从而使可控硅导通。
应用时，阳极加高电平，阴极加低电平，感光区没有接受红外光照射时，该结构关闭，阳极和阴极之间没有电流通过。当感光区接受红外光的照射时，电流从阳极流向阴极。
采用了该发明中的光触发可控硅器件，与现有技术相比，具有以下有益的技术效果：
(1)本发明中的光触发可控硅器件触发电流小，结构简单，占用版图面积小，隔离电压高的优点。
(2)本发明为了实现高的隔离电压及降低封装难度，感光芯片与发光LED封装在一个平面上，且感光区位于芯片边缘，光敏度高。
在此说明书中，本发明已参照其特定的实施例作了描述。但是，很显然仍可以作出各种修改和变换而不背离本发明的精神和范围。因此，说明书和附图应被认为是说明性的而非限制性的。
Claims (3)
1.一种光触发可控硅器件，其特征在于，所述的器件包括N型衬底，所述的N型衬底上设置有第一P型基区、第二P型基区、第三P型基区以及P-型注入区；所述的第二P型基区以及所述的第三P型基区设置于所述的P-型注入区的两侧，且所述的P-型注入区分别与所述的第二P型基区以及所述的第三P型基区相连接；所述的第一P型基区设置于所述的第二P型基区的与所述的P-型注入区相对的一侧；
所述的第三P型基区上设置有第一N+注入区，且所述的第一N+注入区位于所述的第三P型基区内且靠近所述的P-型注入区的一侧；所述的第一N+注入区与所述的第二P型基区相连接；
所述的N型衬底的四周设置有第二N+型注入区。
2.根据权利要求1所述的光触发可控硅器件，其特征在于，所述的第一P型基区与电学阳极相连接，所述的第二P型基区与电学阴极相连接，所述的第三P型基区为用以接受光照后产生光电流的感光区。
3.根据权利要求1所述的光触发可控硅器件，其特征在于，所述的第一N+注入区与所述的第二P型基区通过铝层相连接。
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5345094A (en) * | 1992-07-06 | 1994-09-06 | Kabushiki Kaisha Toshiba | Light triggered triac device and method of driving the same |
| CN1508881A (zh) * | 2002-12-10 | 2004-06-30 | 夏普株式会社 | 双向光控晶闸管芯片、光触发耦合器及固态继电器 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5345094A (en) * | 1992-07-06 | 1994-09-06 | Kabushiki Kaisha Toshiba | Light triggered triac device and method of driving the same |
| CN1508881A (zh) * | 2002-12-10 | 2004-06-30 | 夏普株式会社 | 双向光控晶闸管芯片、光触发耦合器及固态继电器 |
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