CN106910803A - LED epitaxial slice and its manufacture method - Google Patents
LED epitaxial slice and its manufacture method Download PDFInfo
- Publication number
- CN106910803A CN106910803A CN201510979860.9A CN201510979860A CN106910803A CN 106910803 A CN106910803 A CN 106910803A CN 201510979860 A CN201510979860 A CN 201510979860A CN 106910803 A CN106910803 A CN 106910803A
- Authority
- CN
- China
- Prior art keywords
- layer
- quantum
- barrier layer
- doping
- led epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen characterised by the doping materials
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of LED epitaxial slice and its manufacture method.The LED epitaxial slice includes substrate (1) and the cushion (2), n-layer (3), compound multiple quantum-well light-emitting area (4), electronic barrier layer (5) and the p-type layer (6) that are sequentially formed on the substrate (1), it is characterized in that, compound multiple quantum-well light-emitting area (5) includes the quantum well layer (7) and quantum barrier layer (8) that are alternatively formed, quantum base doped layer (10) that each quantum barrier layer (8) is formed at the interface (9) near p-type layer (6) side with being adulterated by N-shaped.LED epitaxial slice of the invention and its manufacture method carry out N-shaped doping in the quantum barrier layer of light emitting diode near p-type layer side, grow N-shaped dopant well and build interface, the negative electrical charge that the interface polarity effect is formed can be offset, weaken the effect of the polarized electric field that piezoelectric polarization is formed, the influence of polarity effect is reduced, the luminous efficiency of LED is improved.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular it relates to a kind of LED epitaxial slice and its
Manufacture method.
Background technology
Light emitting diode (LED) is a kind of junction type electroluminescent that can convert the electrical signal to optical signal half
Conductor device.LED is the raw material of the wafer manufacture inside LED, and it is passed through on substrate
The thin film that chemical vapour deposition technique grows out, injects base and transmitting on epitaxial wafer afterwards
Area, then by techniques such as cuttings, it is possible to form LED wafer.
By taking gallium nitride (GaN) base LED as an example, gallium nitride (GaN) based light-emitting diode is used as solid-state
The advantages of light source is with its high efficiency, long-life, environmental protection turns into international semiconductor and lighting field research and development and produces
Industry focus of attention.In these years, gallium nitride based LED is developed rapidly, and the efficiency of white light LEDs has
Very big raising.But its efficiency relative theory value also has very big room for promotion.And limit for a long time white
The factor that light LED efficiency is improved is also a lot.A problem wherein by vast focus of attention is exactly indium nitride
The piezoelectric polarization effect of gallium (InGaN).
The polarization of InGaN causes to build the surface charge that interface has certain density in SQW and quantum,
Polarized electric field is formed in trap and base.Polarized electric field causes band curvature in SQW, and energy band is in p-type side
It is relatively low, it is elevated in N-shaped side, therefore actual energy band is triangular in shape in SQW.Electronics is to p-type one
Side is assembled, and hole then N-shaped side aggregation round about, i.e., spatially separated, cause electronics
Overlap integral with hole wave functions reduces, combined efficiency reduction, reduces the luminous efficiency of LED.This
Outward, the band curvature during polarized electric field causes quantum to be built makes it also form triangular barrier, can hinder electric current
Diffusion make carrier by potential barrier, it is necessary to improve voltage, equally reduce the luminous efficiency of LED.
There is researcher to propose with the aluminum indium gallium nitride AlInGaN more matched with InGaN SQW lattices
Quantum is built, so as to eliminate the influence of polarity effect.The another SQW for having researcher using triangle, makes
Electronics and hole are limited in potential energy lowest part, and band curvature does not result in electricity caused by such polarized electric field
The Wave function overlap integration in son and hole separation spatially, electronics and hole is no longer quick to polarity effect
Sense, the luminous efficiency of LED is also no longer influenced by the influence of polarity effect.
Method for being built using AlInGaN quantum, is more stranded because aluminium (Al) and indium (In) are incorporated to
Difficulty, therefore be difficult to obtain the AlInGaN epitaxial materials of high-crystal quality.For the SQW of triangle
Method, because quantum well thickness typically only has several nanometers, growth time is very short, be when so short
The interior component results change for realizing so complexity, it is relatively difficult in technique, it is also difficult to grow relatively reason
The triangular quantum well thought.There is larger difficulty on process operability in this two methods.
The content of the invention
In order to solve the problems, such as prior art, the invention discloses a kind of LED epitaxial slice and
Its manufacture method.
The invention discloses the LED epitaxial slice that a kind of N-shaped doping quantum is built, its feature is N-shaped
The place of doping exists only in quantum and builds and SQW interface, and the interface is that quantum is built near p-type one
The interface of side, quantum is built does not carry out N-shaped doping elsewhere with SQW.Due to SQW InGaN
Piezoelectric polarization effect, cause the interface built in SQW and quantum to there is surface charge, build angle from quantum
From the point of view of degree, the interface near N-shaped side carries positive charge, and the interface near p-type side carries negative electrical charge.
In the manufacture method of the LED epitaxial slice that the present invention is provided, built near the boundary of p-type side in quantum
Face carries out N-shaped doping, and fixed positive center is left after impurity ionization, can balance out polarity effect and exist
The negative electrical charge that the interface produces, and then weaken the work of the polarized electric field that two interface surface charges are produced
With.So as to reduce the influence of polarity effect, LED luminous efficiencies are improved.
The present invention builds in quantum carries out N-shaped doping near the interface of p-type side, for example, mix silicon (Si).It is miscellaneous
Fixed positive center is left after matter Si ionization, the negative electrical charge that the interface polarity effect is formed is offset, from
And weaken the influence of polarity effect, improve LED luminous efficiencies.There is operability, Ke Yisheng in technique
Grow comparatively ideal doped interface.
The present invention provides a kind of LED epitaxial slice, including substrate and sequentially forms over the substrate
Cushion, n-layer, compound multiple quantum-well light-emitting area, electronic barrier layer and p-type layer, it is described
Compound multiple quantum-well light-emitting area includes the quantum well layer and quantum barrier layer that are alternatively formed, and each quantum barrier layer exists
There is the quantum for being formed that adulterated by N-shaped to build doped layer near the interface of the p-type layer side.
Preferably, the periodicity of the quantum well layer being alternatively formed and the quantum barrier layer is in 1
To between 20.
Preferably, the N-shaped is doped to silicon doping.
Preferably, the doping concentration of the silicon doping is in 1 × 1019/cm3To 1 × 1020/cm3Between.
Preferably, the doping concentration of the silicon doping is 5 × 1019/cm3。
Preferably, the doping thickness of the silicon doping is between 1 to 3 thickness of silicon atom.
The present invention also provides a kind of manufacture method of LED epitaxial slice.Methods described includes：There is provided
One substrate；Grown buffer layer, n-layer, compound multiple quantum-well light-emitting area, electricity successively over the substrate
Sub- barrier layer and p-type layer, wherein, the compound multiple quantum-well light-emitting area includes the amount being alternatively formed
Sub- well layer and quantum barrier layer, carry out N-shaped and mix in each quantum barrier layer near the interface of the p-type layer side
It is miscellaneous to build doped layer to form quantum.
Preferably, the periodicity of the quantum well layer being alternatively formed and the quantum barrier layer is in 1
To between 20.
Preferably, the N-shaped is doped to silicon doping.
Preferably, the doping concentration of the silicon doping is in 1 × 1019/cm3To 1 × 1020/cm3Between.
Preferably, the doping concentration of the silicon doping is 5 × 1019/cm3。
Preferably, the doping thickness of the silicon doping is between 1 to 3 thickness of silicon atom.
By above-mentioned technical proposal, N-shaped is carried out near p-type layer side in the quantum barrier layer of light emitting diode
Doping, grows N-shaped dopant well and builds interface, can offset the negative electrical charge that the interface polarity effect is formed,
Weaken the effect of the polarized electric field that piezoelectric polarization is formed, reduce the influence of polarity effect, improve the hair of LED
Light efficiency.
Other features and advantages of the present invention will be described in detail in subsequent specific embodiment part.
Brief description of the drawings
Accompanying drawing is, for providing a further understanding of the present invention, and to constitute the part of specification, with
Following specific embodiment is used to explain the present invention together, but is not construed as limiting the invention.
In accompanying drawing：
Fig. 1 is the structural representation of the LED that an exemplary embodiment is provided；
Fig. 2 is the partial structural diagram of the compound multiple quantum-well light-emitting area that an exemplary embodiment is provided；
Fig. 3 is the flow chart of the manufacture method of the LED that an exemplary embodiment is provided；And
Fig. 4 is the flow chart in each layer of Grown that an exemplary embodiment is provided.
Description of reference numerals
The n-layer of 1 substrate, 2 cushion 3
The p-type layer of 45 electronic barrier layer of compound multiple quantum-well light-emitting area 6
Interface of the quantum barrier layer 9 of 7 quantum well layer 8 near p-type layer side
10 quantum build doped layer
Specific embodiment
Specific embodiment of the invention is described in detail below in conjunction with accompanying drawing.It should be appreciated that
Specific embodiment described herein is merely to illustrate and explain the present invention, and is not limited to this hair
It is bright.
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to this hair
Bright implementation method is described in further detail.
Fig. 1 is the structural representation of the LED that an exemplary embodiment is provided.As shown in figure 1, should
LED epitaxial slice includes substrate 1 and sequentially forms cushion 2 on substrate 1, n-layer 3, multiple
Close multiple quantum-well light-emitting area 4, electronic barrier layer 5 and p-type layer 6.Compound multiple quantum-well light-emitting area 4 is wrapped
The quantum well layer 7 and quantum barrier layer 8 being alternatively formed are included, each quantum barrier layer 8 is near the side of p-type layer 6
There is the quantum for being formed that adulterated by N-shaped to build doped layer 10 at interface 9.
Wherein, substrate 1 can be Sapphire Substrate, and cushion 2 can be nitride buffer layer, n-layer 3
Can be silicon doping N-shaped gallium nitride, p-type layer 6 can be mg-doped p-type gallium nitride, quantum well layer 7 can be with
It is indium gallium nitride quantum well layer, quantum barrier layer 8 can be that gallium nitride quantum is built.In addition, in the He of cushion 2
Intrinsic layer can also be formed between n-layer 3, the intrinsic layer can be gallium nitride.
Fig. 2 is the partial structural diagram of the compound multiple quantum-well light-emitting area 4 that an exemplary embodiment is provided.
As shown in Fig. 2 compound multiple quantum-well light-emitting area 4 can include that the quantum well layer 7 being alternatively formed and quantum are built
Layer 8.The quantum well layer 7 and the periodicity of quantum barrier layer 8 being alternatively formed may be between 1 to 20.Wherein,
It is once a cycle that quantum well layer 7 and quantum barrier layer 8 is alternately present, it is, each cycle includes amount
Sub- well layer 7 and the quantum barrier layer 8 being layered on quantum well layer 7.The periodicity is quantum well layer 7 and quantum
The number of times that barrier layer 8 is alternately present.Preferably, the quantum well layer 7 being alternatively formed and the cycle of quantum barrier layer 8
Number is 15.
Each quantum barrier layer 8 has the quantum base adulterated by N-shaped and formed at the interface 9 near the side of p-type layer 6
Doped layer 10.Wherein, the N-shaped is doped to silicon doping.
The doping concentration of Si doping may be at 1 × 1019/cm3To 1 × 1020/cm3Between.For example, Si mixes
Miscellaneous doping concentration is 5 × 1019/cm3.The doping thickness of Si doping may be at 1 to 3 silicon atom
Between thickness.The thickness of quantum well layer 7 can be 1-7nm, preferably 3nm.The thickness of quantum barrier layer 8
Degree can be 7-20nm, preferably 12nm.
By above-mentioned technical proposal, N-shaped is carried out near p-type layer side in the quantum barrier layer of light emitting diode
Doping, grows N-shaped dopant well and builds interface, can offset the negative electrical charge that the interface polarity effect is formed,
Weaken the effect of the polarized electric field that piezoelectric polarization is formed, reduce the influence of polarity effect, improve the hair of LED
Light efficiency.
Present invention also offers a kind of manufacture method of LED.Fig. 3 is that an exemplary embodiment is carried
The flow chart of the manufacture method of the LED of confession.As shown in figure 3, methods described can include it is following
Step.
In step s 11, there is provided a substrate 1.
For example, Sapphire Substrate can be provided.Thermal cleaning and nitrogen treatment can be carried out to substrate 1, is had
Body is：Thermal cleaning is carried out in 1080-1190 DEG C, hydrogen atmosphere, is nitrogenized after being cooled to 630 DEG C
Treatment.
In step s 12, grown buffer layer 2, n-layer 3, compound Multiple-quantum successively on substrate 1
Trap luminous zone 4, electronic barrier layer 5 and p-type layer 6.Wherein, it is combined multiple quantum-well light-emitting area 4
Including the quantum well layer 7 and quantum barrier layer 8 that are alternatively formed, in each quantum barrier layer 8 near p-type layer 6
The interface 9 of side carries out N-shaped doping and builds doped layer 10 to form quantum.
Fig. 4 is the flow chart for growing each layer on substrate 1 that an exemplary embodiment is provided.Such as Fig. 4
Shown, (step S12) may comprise steps of the step of grow each layer on substrate 1.
In step S121, grown buffer layer 2 on substrate 1.The material of the cushion 2 can be nitridation
Gallium.Process conditions can be：600 DEG C of growth temperature, growth pressure 350-750Torr.The thickness of cushion 2
Degree can be 18-32nm.
In step S122, growing n-type layer 3 on the buffer layer 2, the material of the n-layer 3 can be nitridation
Gallium, it is possible to doped with monosilane (SiH4).Wherein, growth pressure can be 100-600Torr, raw
Temperature long can be 1080-1190 DEG C.
Intrinsic layer can also be on the buffer layer 2 grown, the regrowth n-layer 3 on intrinsic layer.The intrinsic layer
Material can be gallium nitride.First cushion 2 can be made annealing treatment, regrowth after annealing
Intrinsic layer.Growth pressure can be 100-600Torr, and growth thickness can be 0.6-1.8 μm.
In step S123, the growing mixed multiple quantum-well light-emitting area 4 in n-layer 3.The compound Multiple-quantum
Trap luminous zone 4 can be multicycle structure, the quantum well layer 7 and the periodicity of quantum barrier layer 8 being alternatively formed
May be between 1 to 20, and preferably 15.Each cycle includes quantum well layer 7 and is layered in quantum
Quantum barrier layer 8 on well layer 7.
Wherein, the growth technique condition of the quantum well layer 7 in each cycle can be：Growth temperature
730-840 DEG C, growth pressure 100-400Torr, the thickness of the quantum well layer 7 in each cycle can be
1-7nm, preferably 3nm；The growth technique condition of the quantum barrier layer 8 in each cycle can be：Growth temperature
810-960 DEG C of degree, growth pressure 100-400Torr, the thickness of the quantum barrier layer 8 in each cycle can be
7-20nm, preferably 12nm.
Quantum barrier layer 8 in each cycle near the interface 9 of the side of p-type layer 6, (give birth to by the cycle quantum barrier layer 8
Final stage long) can adulterate Si, it is, the doping of above-mentioned N-shaped can adulterate for Si.Si doping
Doping concentration is in 1 × 1019/cm3To 1 × 1020/cm3Between, preferably 5 × 1019/cm3.What Si adulterated mixes
Miscellaneous thickness is between 1 to 3 thickness of atomic layer, and more Bao Yuehao.
In step S124, electronic barrier layer 5 is grown in compound multiple quantum-well light-emitting area 4.
In step s 125, the growing P-type layer 6 on electronic barrier layer 5.The material of the P-type layer 6
Can be gallium nitride, doped with SiH4.Process conditions can be：Growth pressure 100-600Torr is raw
1080-1190 DEG C of temperature long.
Wherein it is possible to using trimethyl gallium (TMGa), triethyl-gallium (TEGa), trimethyl aluminium (TMAl),
Trimethyl indium (TMIn), two luxuriant magnesium (Cp2Mg), ammonia (NH3), monosilane (SiH4) make
It is deposition materials, and respectively with hydrogen (H2), nitrogen (N2) as carrier gas.
By above-mentioned technical proposal, N-shaped is carried out near p-type layer side in the quantum barrier layer of light emitting diode
Doping, grows N-shaped dopant well and builds interface, can offset the negative electrical charge that the interface polarity effect is formed,
Weaken the effect of the polarized electric field that piezoelectric polarization is formed, reduce the influence of polarity effect, improve the hair of LED
Light efficiency.
The preferred embodiment of the present invention is described in detail above in association with accompanying drawing, but, the present invention is not limited
Detail in above-mentioned implementation method, in range of the technology design of the invention, can be to the present invention
Technical scheme carry out various simple variants, these simple variants belong to protection scope of the present invention.
Claims (12)
1. a kind of LED epitaxial slice, including substrate (1) and the substrate (1) is sequentially formed at
On cushion (2), n-layer (3), compound multiple quantum-well light-emitting area (4), electronic barrier layer (5),
And p-type layer (6), it is characterised in that the compound multiple quantum-well light-emitting area (5) includes alternately shape
Into quantum well layer (7) and quantum barrier layer (8), each quantum barrier layer (8) is near the p-type layer
(6) quantum that the interface (9) of side is formed with being adulterated by N-shaped builds doped layer (10).
2. LED epitaxial slice according to claim 1, it is characterised in that the alternating
The quantum well layer (7) and the periodicity of the quantum barrier layer (8) for being formed are between 1 to 20.
3. LED epitaxial slice according to claim 1, it is characterised in that the N-shaped
It is doped to silicon doping.
4. LED epitaxial slice according to claim 3, it is characterised in that the silicon is mixed
Miscellaneous doping concentration is in 1 × 1019/cm3To 1 × 1020/cm3Between.
5. LED epitaxial slice according to claim 3, it is characterised in that the silicon is mixed
Miscellaneous doping concentration is 5 × 1019/cm3。
6. LED epitaxial slice according to claim 3, it is characterised in that the silicon is mixed
Miscellaneous doping thickness is between 1 to 3 thickness of silicon atom.
7. a kind of manufacture method of LED epitaxial slice, it is characterised in that methods described includes：
One substrate (1) is provided；
Grown buffer layer (2), n-layer (3), compound MQW are sent out successively on the substrate (1)
Light area (4), electronic barrier layer (5) and p-type layer (6), wherein, the compound MQW hair
Light area (4) includes the quantum well layer (7) and quantum barrier layer (8) that are alternatively formed, in each quantum barrier layer
(8) near the p-type layer (6) side interface (9) carry out N-shaped doping with formed quantum build mix
Diamicton (10).
8. method according to claim 7, it is characterised in that the amount being alternatively formed
The periodicity of sub- well layer (7) and the quantum barrier layer (8) is between 1 to 20.
9. method according to claim 7, it is characterised in that the N-shaped is doped to silicon doping.
10. method according to claim 9, it is characterised in that the doping concentration of the silicon doping
In 1 × 1019/cm3To 1 × 1020/cm3Between.
11. methods according to claim 9, it is characterised in that the doping concentration of the silicon doping
It is 5 × 1019/cm3。
12. methods according to claim 9, it is characterised in that the doping thickness of the silicon doping
Between 1 to 3 thickness of silicon atom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510979860.9A CN106910803A (en) | 2015-12-23 | 2015-12-23 | LED epitaxial slice and its manufacture method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510979860.9A CN106910803A (en) | 2015-12-23 | 2015-12-23 | LED epitaxial slice and its manufacture method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106910803A true CN106910803A (en) | 2017-06-30 |
Family
ID=59200528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510979860.9A Pending CN106910803A (en) | 2015-12-23 | 2015-12-23 | LED epitaxial slice and its manufacture method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106910803A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111629782A (en) * | 2018-01-26 | 2020-09-04 | 国际商业机器公司 | Multi-light source integrated in a neuroprobe for multi-wavelength activation |
| CN115020558A (en) * | 2022-08-05 | 2022-09-06 | 江西兆驰半导体有限公司 | High-recombination-efficiency light-emitting diode epitaxial wafer and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101055911A (en) * | 2006-04-14 | 2007-10-17 | 丰田合成株式会社 | Light emitting element and communication device using same |
| KR20100066767A (en) * | 2008-12-10 | 2010-06-18 | 삼성엘이디 주식회사 | Nitride semiconductor device |
| CN103337573A (en) * | 2013-07-05 | 2013-10-02 | 华灿光电股份有限公司 | Epitaxial wafer of semiconductor light emitting diode and manufacturing method of epitaxial wafer |
| CN103460411A (en) * | 2012-03-05 | 2013-12-18 | 松下电器产业株式会社 | Nitride semiconductor light-emitting element, light source, and method for manufacturing same |
-
2015
- 2015-12-23 CN CN201510979860.9A patent/CN106910803A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101055911A (en) * | 2006-04-14 | 2007-10-17 | 丰田合成株式会社 | Light emitting element and communication device using same |
| KR20100066767A (en) * | 2008-12-10 | 2010-06-18 | 삼성엘이디 주식회사 | Nitride semiconductor device |
| CN103460411A (en) * | 2012-03-05 | 2013-12-18 | 松下电器产业株式会社 | Nitride semiconductor light-emitting element, light source, and method for manufacturing same |
| CN103337573A (en) * | 2013-07-05 | 2013-10-02 | 华灿光电股份有限公司 | Epitaxial wafer of semiconductor light emitting diode and manufacturing method of epitaxial wafer |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111629782A (en) * | 2018-01-26 | 2020-09-04 | 国际商业机器公司 | Multi-light source integrated in a neuroprobe for multi-wavelength activation |
| CN111629782B (en) * | 2018-01-26 | 2022-12-20 | 国际商业机器公司 | Multi-light source integrated in a neuroprobe for multi-wavelength activation |
| CN115020558A (en) * | 2022-08-05 | 2022-09-06 | 江西兆驰半导体有限公司 | High-recombination-efficiency light-emitting diode epitaxial wafer and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106098882B (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN103337573B (en) | The epitaxial wafer of semiconductor light-emitting-diode and manufacture method thereof | |
| CN103887378B (en) | Method for epitaxial growth of ultraviolet LED with high luminous efficacy | |
| CN102306691B (en) | Method for raising light emitting diode luminescence efficiency | |
| WO2007029638A1 (en) | Semiconductor light emitting element and illuminating apparatus using same | |
| CN103985798B (en) | A kind of LED and preparation method thereof with novel quantum well structure | |
| JP6902255B2 (en) | Ultraviolet light emitting element | |
| JP5279006B2 (en) | Nitride semiconductor light emitting device | |
| CN102881788A (en) | Epitaxial growth method for improving GaN-based light-emitting diode (LED) quantum well structure to improve carrier recombination efficiency | |
| WO2014073139A1 (en) | Ultraviolet semiconductor light emitting element and method for manufacturing same | |
| CN107180899B (en) | Deep ultraviolet LED | |
| CN102931303A (en) | Epitaxial structure and growing method thereof | |
| CN102709424A (en) | Method for improving luminous efficiency of light-emitting diode | |
| CN103346217A (en) | Method for designing quantum barrier used for enhancing light emitting diode (LED) brightness | |
| WO2016197650A1 (en) | Dopant-free algan-based ultraviolet light emitting diode and preparation method thereof | |
| CN108447952B (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN108831974A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| US8278129B2 (en) | Manufacturing method of nitride semi-conductor layer, and a nitride semi-conductor light emitting device with its manufacturing method | |
| CN102623597B (en) | Structure of barrier in multiple quantum well for improving combination efficiency of carriers | |
| CN102881790A (en) | LED quantum well structure and growth method | |
| CN108987544A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN106910803A (en) | LED epitaxial slice and its manufacture method | |
| CN107482095A (en) | A kind of LED epitaxial growth methods | |
| CN109713097A (en) | A kind of LED epitaxial structure and preparation method thereof, LED chip | |
| JP2009076864A (en) | Nitride-based light emitting device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170630 |