CN106910675A - A kind of compound substrate for preparing nitride electronic devices and preparation method thereof - Google Patents
A kind of compound substrate for preparing nitride electronic devices and preparation method thereof Download PDFInfo
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- CN106910675A CN106910675A CN201710137611.4A CN201710137611A CN106910675A CN 106910675 A CN106910675 A CN 106910675A CN 201710137611 A CN201710137611 A CN 201710137611A CN 106910675 A CN106910675 A CN 106910675A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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Abstract
A kind of compound substrate for preparing nitride electronic devices and preparation method thereof, the compound substrate includes silicon substrate, aln layer and patterned media film, aln layer is prepared on a silicon substrate, patterned media film preparation is on aln layer, the patterned media film has several, and there is interval gap between adjacent patterned media film, patterned media film is patterned into circle, triangle, polygon or striated, and patterned media film is made up of silica, silicon nitride, titanium nitride, metallic dielectric layer or polycrystal alumina.The present invention solves the stress problem run into nitride electronic power components Heteroepitaxy, is conducive to improving device performance.
Description
Technical field
It is specifically a kind of for preparing nitride electronics device the invention belongs to semiconductor photoelectronic device technical field
Compound substrate of part and preparation method thereof.
Background technology
It is main third generation semiconductor devices recent with Si, GaN, SiC and its corresponding compound InGaN, AlN, AlGaN
Receive much concern, and achieve theoretical important breakthrough, certain fields realize the application of industrialization.For example, the power device of carborundum
Part completes the research before industry, and realizes civil nature application in small range power domain.The high withstand voltage of nitride, migration high
Rate and saturation carrier concentration high are the common traits of third generation semiconductor, are expected to break through big on the basis of the existing silicon device limit
Sizable application.
At present, it is usually the hetero-epitaxy device with Si, sapphire, SiC as substrate for the opto-electronic device of present GaN base
Prepared by part, lack GaN substrate.Dimensional electron extension application based on big mismatch is relatively broad.Big mismatch hetero-epitaxy is present
Larger lattice mismatch and the problem of thermal stress mismatch, lattice mismatch can introduce dislocation density higher, and thermal stress can cause tortoise
Split problem.The epitaxy technology of existing gallium nitride opto-electronic device mainly carries out technological parameter regulation in MOCVD reative cells original position（Temperature
Degree, time, flow, pressure etc.）With insert layer technology etc., and these epitaxy technologies typically sacrifice crystal mass to discharge stress,
Otherwise or.It is difficult to reach the effect of crystal mass raising and Stress Release simultaneously.Stress and high dislocation density turn into puzzlement nitrogen
Change the subject matter that gallium device performance is improved.Stress problem especially in the nitride electronic devices of large-sized silicon wafers substrate more
Seriously.The device performance of nitride is further improved in existing technical foundation, it is necessary to take into account Stress Release and raising simultaneously
The technology of crystal mass.
The content of the invention
The technical problem to be solved in the present invention be to provide a kind of compound substrate for preparing nitride electronic devices and its
Preparation method, is conducive to improving the performance of electronic device.
In order to solve the above-mentioned technical problem, the present invention takes following technical scheme：
A kind of compound substrate for preparing nitride electronic devices, the compound substrate includes silicon substrate, aln layer and figure
Shape deielectric-coating, aln layer prepare on a silicon substrate, patterned media film preparation on aln layer, the patterned media film
There is interval gap with several, and between adjacent patterned media film.
The patterned media film is patterned into circle, triangle, polygon or striated.
The patterned media film is made up of silica, silicon nitride, titanium nitride, metallic dielectric layer or polycrystal alumina.
Interval gap between the adjacent pattern deielectric-coating is 10nm-2um.
The aln layer is at least one layer of quasi- monocrystalline or monocrystalline.
The thickness of the aln layer is 20nm-2um.
The silicon substrate is N-type, p-type or intrinsic, and size range is 2-16 inches, and thickness is 200um-2mm.
A kind of preparation method of compound substrate, comprises the following steps：
Selection N-type, p-type or intrinsic silicon substrate；
One layer of aln layer is prepared on a silicon substrate；
A layer dielectric is prepared on aln layer；
Using the method for whirl coating one layer of glue-line is prepared on deielectric-coating surface；
Treatment is patterned to deielectric-coating by nano impression, glue-line is extruded using graphics template, the shape on glue-line
Into with graphics template identical figure, now certain media film is directly exposed, certain media film by glue-line figure cover；
Directly exposed deielectric-coating is removed by the method for chemical attack or physical etchings；
The glue-line figure for being covered with deielectric-coating is removed by chemical corrosion method again, patterned media film/aln layer/silicon is obtained
The compound substrate of substrat structure.
The aln layer is prepared on a silicon substrate by MOCVD, PLD or sputtering or chemical mode.
The deielectric-coating is prepared by PECVD, PLD, PVD, sputtering, evaporation or chemical solution spin coating mode.
Compound substrate prepared by the present invention, preferably, figure periodic dimensions are smaller for uniformity, are conducive to improving the crystalline substance of nitride
Weight, has preferable effect for the Stress Release of nitride electronic devices hetero-epitaxy, to silica-based nitride electronic device
Performance has good improvement result.
Brief description of the drawings
Accompanying drawing 1 is the generalized section of compound substrate of the present invention；
Accompanying drawing 2 is the preparation process schematic diagram of the inventive method；
Accompanying drawing 3 is the generalized section that compound substrate of the present invention prepares electronic device.
Specific embodiment
For the ease of the understanding of those skilled in the art, the invention will be further described below in conjunction with the accompanying drawings.
As shown in Figure 1, a kind of compound substrate for preparing nitride electronic devices, the compound substrate is served as a contrast including silicon
Bottom 1, aln layer 2 and patterned media film 3, aln layer 2 are prepared on silicon substrate 1, and patterned media film 3 is prepared in nitridation
On aluminium lamination 2, the patterned media film has several, and has interval gap 4 between adjacent patterned media film, should between
Septal space is 10nm-2um, and concrete numerical value can flexibly be selected in the range intervals.Can be by physics such as MOCVD, PLD, sputterings
Or the method for chemistry prepares aln layer on a silicon substrate.The thickness of aln layer is 20nm-2um, most preferably 80nm-
500nm, the aln layer can be defined monocrystalline, the individual layer of monocrystalline or multilayer, you can think one layer, two-layer, three layers or its
His quantity.
The patterned media film is patterned into circle, triangle, polygon or striated, or other shapes,
Listed above is not to limit.Patterned media film is aoxidized by silica, silicon nitride, titanium nitride, metallic dielectric layer or polycrystalline
Aluminium is made.
The silicon substrate is N-type, p-type or intrinsic, and size range is 2-16 inches, and thickness is 200um-2mm.
Patterned media film is prepared by aln layer/silicon substrate double-decker, the release to stress has preferably
Effect.
Additionally, as shown in Figure 2, present invention further teaches a kind of preparation method of compound substrate, comprising the following steps：
S1, selection N-type, p-type or intrinsic silicon substrate 1.8 inches are selected in the present embodiment<111>The P-type silicon substrate of crystal orientation.
S2, prepares one layer of aln layer 2 on silicon substrate 1.Can be served as a contrast in silicon by MOCVD, PLD or sputtering or chemical mode
Prepared on bottom, in the present embodiment, the thick aln layers of one layer of 100nm are deposited using MOCVD methods.
S3, prepares a layer dielectric 3 on aln layer 2.Can be by PECVD, PLD, PVD, sputtering, evaporation or chemical solution
Prepared by liquid spin coating mode, it is a layer dielectric of 50nm to use PECVD to prepare thickness in the present embodiment.
S4, one layer of glue-line of 50nm 5 is prepared using the method for whirl coating on deielectric-coating surface 3.
S5, treatment is patterned by nano impression to deielectric-coating 3, and glue-line 5 is extruded using graphics template 7,
Formed on glue-line 5 and form glue-line graphic array with the identical figure 6 of graphics template 7, deielectric-coating/aln layer/silicon substrate, this
When certain media film it is directly exposed, certain media film is covered to form glue-line/medium film pattern 8 by the figure on glue-line.Figure mould
The figure of plate is circular display, and its diameter of a circle is 20nm, and the distance between circle and circle are 10nm.
S6, directly exposed deielectric-coating is removed by the method for chemical attack or physical etchings.Being put into ICP chambers is carried out
Etching, etching power is 3KW, and the flow of etching gas boron chloride is 100 SCCM, and directly exposed aln layer is carried out
Etching removal, is remained by the deielectric-coating that the figure of glue-line is covered.
S7, then the glue-line figure for being covered with deielectric-coating is removed by chemical corrosion method, obtain the nitrogen of patterned media film 9/
Change the compound substrate of the structure of 2/ silicon substrate of aluminium lamination 1.Sample after etching is taken out from ICP chambers, chemical corrosion liquid BOE the insides are put into
Treatment of removing photoresist is carried out, glue-line removal is clean.
When electronic device is prepared using the compound substrate, as shown in Figure 3, using MOCVD in patterned media film 3/
Gallium nitride HEMT device 10 is carried out in the compound substrate that 2 silicon substrates of aln layer 1 are constituted to grow.Due to being carried out inside MOCVD
During growth, mono-crystal gallium nitride is only carried out on patterned aln layer surface, eventually through horizontal extension original interval
Region（There is no aln seed layer region）Covering, forms unified mono-crystal gallium nitride, and region 4A can only form polycrystalline nitridation
Gallium or air-gap, so as to reduce the contact area of gallium nitride HEMT device 10 and silicon substrate 1, are conducive to Stress Release, from
And reduce HEMT cracking problems.
It should be noted that the above is not limited to the present invention, creation design of the invention is not being departed from
Under the premise of, any obvious replacement is within protection scope of the present invention.
Claims (10)
1. a kind of compound substrate for preparing nitride electronic devices, it is characterised in that the compound substrate include silicon substrate,
Aln layer and patterned media film, aln layer are prepared on a silicon substrate, and patterned media film preparation, should on aln layer
Patterned media film has several, and has interval gap between adjacent patterned media film.
2. the compound substrate for preparing nitride electronic devices according to claim 1, it is characterised in that the figure
That changes deielectric-coating is patterned into circle, triangle, polygon or striated.
3. the compound substrate for preparing nitride electronic devices according to claim 2, it is characterised in that the figure
Change deielectric-coating to be made up of silica, silicon nitride, titanium nitride, metallic dielectric layer or polycrystal alumina.
4. the compound substrate for preparing nitride electronic devices according to claim 3, it is characterised in that described adjacent
Interval gap between patterned media film is 10nm-2um.
5. the compound substrate for preparing nitride electronic devices according to claim 4, it is characterised in that the nitridation
Aluminium lamination is at least one layer of quasi- monocrystalline or monocrystalline.
6. the compound substrate for preparing nitride electronic devices according to claim 5, it is characterised in that the nitridation
The thickness of aluminium lamination is 20nm-2um.
7. the compound substrate for preparing nitride electronic devices according to claim 6, it is characterised in that the silicon lining
Bottom is N-type, p-type or intrinsic, and size range is 2-16 inches, and thickness is 200um-2mm.
8. a kind of preparation method of compound substrate according to any one of claim 1-7, comprises the following steps：
Selection N-type, p-type or intrinsic silicon substrate；
One layer of aln layer is prepared on a silicon substrate；
A layer dielectric is prepared on aln layer；
Using the method for whirl coating one layer of glue-line is prepared on deielectric-coating surface；
Treatment is patterned to deielectric-coating by nano impression, glue-line is extruded using graphics template, the shape on glue-line
Into with graphics template identical figure, now certain media film is directly exposed, certain media film by glue-line figure cover；
Directly exposed deielectric-coating is removed by the method for chemical attack or physical etchings；
The glue-line figure for being covered with deielectric-coating is removed by chemical corrosion method again, patterned media film/aln layer/silicon is obtained
The compound substrate of substrat structure.
9. the preparation method of compound substrate according to claim 8, it is characterised in that the aln layer by MOCVD,
PLD or sputtering or chemical mode are prepared on a silicon substrate.
10. the preparation method of compound substrate according to claim 9, it is characterised in that the deielectric-coating by PECVD,
It is prepared by PLD, PVD, sputtering, evaporation or chemical solution spin coating mode.
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| CN111029256A (en) * | 2019-11-25 | 2020-04-17 | 清华大学 | Method for patterning aluminum nitride and silicon carbide composite structure and composite structure |
| CN112133632A (en) * | 2020-09-16 | 2020-12-25 | 深圳市汇芯通信技术有限公司 | Method for reducing stress of HEMT (high electron mobility transistor) and HEMT |
| CN114420402A (en) * | 2021-12-16 | 2022-04-29 | 钢铁研究总院 | High-orientation and high-resistivity stripe type magnetic film and preparation method thereof |
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| CN112133632A (en) * | 2020-09-16 | 2020-12-25 | 深圳市汇芯通信技术有限公司 | Method for reducing stress of HEMT (high electron mobility transistor) and HEMT |
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