CN102304760A - Composite substrate, preparation method of composite substrate and method for preparing single crystal thick film through hetero-epitaxy - Google Patents
Composite substrate, preparation method of composite substrate and method for preparing single crystal thick film through hetero-epitaxy Download PDFInfo
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Abstract
The embodiment of the invention discloses a composite substrate which is used to prepare a nitride (III) semiconductor single crystal thick film through epitaxial growth. The composite substrate is characterized by comprising a heterogeneous substrate and a buffer layer on the heterogeneous substrate, wherein the thickness of the heterogeneous substrate is 0.5-13mm. As the composite substrate has high thickness, after the single crystal thick film is grown on the composite substrate and the growing temperature is reduced to the room temperature, the stress on the composite substrate is less than the fracture stress; and when the single crystal thick film has proper or even higher thickness, the composite substrate can not be broken and then the single crystal thick film can not be broken. Therefore, the size of the formed single crystal thick film can be ensured and the large crystal thick film can be obtained.
Description
Technical field
The present invention relates to semiconductor fabrication, more particularly, relate to the method that a kind of compound substrate and method of manufacture thereof, hetero epitaxy prepare single-crystal thick films.
Background technology
Third generation semiconductor material since the energy forbidden band generally greater than 3.0 ev, wide bandgap semiconductor is otherwise known as.Than traditional silica-based and GaAs based semiconductor material; Wide bandgap semiconductor; For example silit (SiC), gan (GaN), aluminium nitride AlN (AlN) and indium nitride (InN) etc.; Because its distinctive forbidden band scope, good light, electrical properties and excellent material property, can satisfy the job requirement of high-power, high temperature high frequency and high-speed semiconductor device, in the prospect that is widely used aspect automobile and aircraft industry, medical treatment, military affairs and the general lighting.Wherein, gan, aluminium nitride AlN and indium nitride etc. are referred to as the III group-III nitride.
Gan is a kind of semiconductor material with wide forbidden band of excellence; Be to make to launch the photodiode of blue green light and UV-light and the ideal material of laser apparatus, the dizzy detector of the sun, high-energy condensed state switch and RF and high-energy-density microwave transistor; To being the third generation semiconductor material of representative and the research and development of device with the gan, become a focus of semiconductor applications.
Because the nitride that does not have the high quality infraversion malposition as crystal seed, adopts the method for monolithic to produce gallium nitride single crystal usually, promptly goes up growing gallium nitride single crystal in foreign substrate (like Sapphire Substrate or silicon carbide substrates).At present, mainly adopt the method epitaxial growth of gallium nitride single-crystal thick films of HVPE (Hydride vapor phase epitaxy, hydride vapour phase epitaxy method), growth temperature reach usually 1000 ℃ or more than.
Yet, because sapphire thermal expansivity is greater than the thermal expansivity of gan, when from the growth temperature cool to room temperature; The lattice that sapphire lattice changes greater than gan changes; Like this, will on Sapphire Substrate, produce tensile stress, produce stress on the gallium nitride single crystal thick film; After dropping to room temperature, warpage can take place in the one-piece construction of gallium nitride single crystal thick film and Sapphire Substrate.At present; The thickness of the Sapphire Substrate of general industry specification is at 430 microns; If the gallium nitride single crystal thickness of thick film of growth reaches certain value when (as above 200 microns), tensile stress suffered on the Sapphire Substrate reaches more than the 200MPa, and the thick film of the gallium nitride single crystal of growth will reach more than 400 microns usually; The tensile stress that on sapphire, produces surpasses its stress-at-break, can cause breaking of Sapphire Substrate.
And when Sapphire Substrate was broken, because following two factors also can cause the cracking of gallium nitride single crystal: one of which was a successive on sapphire and the gan interface, and sapphire causes the cracking of the gallium nitride single crystal thick film on it in disruptive moment; Its two because buckling deformation, make gallium nitride single crystal thick film cracking.Based on this, the size of the gallium nitride single crystal thick film of acquisition is restricted the size of the gallium nitride single crystal thick film of HVPE method growth often less than the size of former Sapphire Substrate, is unfavorable for the industrialization of this method.
Summary of the invention
The problem that the present invention solves provides a kind of compound substrate, prevent above that the epitaxy single-crystal thick films after, compound substrate breaks in the process of cooling.
For addressing the above problem, the present invention provides a kind of compound substrate, is used for epitaxy III nitride semiconductor single crystal thick film, comprising: the impact plies on foreign substrate and the foreign substrate, wherein, the thickness of said foreign substrate is 0.5 to 13 millimeter.
Alternatively, the thickness of said foreign substrate is 3 to 8 millimeters.
In addition, the present invention also provides the method for manufacture of above-mentioned compound substrate, comprising: foreign substrate is provided, and the thickness of said foreign substrate is 0.5 to 13 millimeter;
On said foreign substrate, form impact plies.
Alternatively, the method that forms said impact plies is MOCVD, HVPE, PECVD or sputter.
Alternatively, said foreign substrate is sapphire, silit, silicon single crystal or zinc oxide.
In addition; The present invention provides a kind of compound substrate again, is used for epitaxy III nitride semiconductor single crystal thick film, comprising: the impact plies on first substrate, the first suprabasil foreign substrate and the foreign substrate; Wherein, Said first substrate has identical thermal expansivity with said foreign substrate, and the thermal expansion coefficient difference of perhaps said first substrate and said foreign substrate is less than 60%, and the thickness of said first substrate is 0.5 to 13 millimeter.
Alternatively, the thickness of said first substrate is 3 to 8 millimeters.
Alternatively, said foreign substrate is sapphire, silit, silicon single crystal or zinc oxide.
Alternatively, said first substrate is polycrystalline gan, polycrystalline aluminium nitride AlN, aluminium nitride ceramics, sapphire, silicon single crystal, silit, zinc oxide or glass.
In addition, the present invention also provides the method for manufacture of above-mentioned compound substrate, comprising:
Foreign substrate is provided, and on the first surface of said foreign substrate, forms impact plies;
First substrate is provided; And it is first substrate is compound with foreign substrate from the second surface of said foreign substrate; Wherein, Said first substrate has identical thermal expansivity with said foreign substrate, and the thermal expansion coefficient difference of perhaps said first substrate and said foreign substrate is less than 60%, and the thickness of said first substrate is 0.5 to 13 millimeter.
Alternatively, the method that forms said impact plies is MOCVD, HVPE, PECVD or sputter.
Alternatively, be the method that resistant to elevated temperatures bonding or wafer engage with first substrate with the foreign substrate composite methods.
In addition, the present invention provides again and utilized above-mentioned compound substrate hetero epitaxy to prepare the method for single-crystal thick films, comprising: extension forms the single-crystal thick films of III group-III nitride semiconductor on the impact plies of above-mentioned compound substrate.
Alternatively, after forming single-crystal thick films, also comprise step: said compound substrate is removed from single-crystal thick films, the compound substrate after removing is used for preparing once more the substrate of single-crystal thick films.
Compared with prior art, technique scheme has the following advantages:
The compound substrate of the embodiment of the invention and method of manufacture thereof, hetero epitaxy prepare the method for single-crystal thick films; Because compound substrate has big thickness, above that behind the growing single-crystal thick film, when growth temperature is reduced to room temperature; Stress suffered on the compound substrate is less than its stress-at-break; And single-crystal thick films can not cause breaking of compound substrate yet, and then just can not cause breaking of single-crystal thick films yet when having suitable or thicker thickness; Thereby guaranteed the size of the single-crystal thick films of formation, obtained large-sized single-crystal thick films.
Description of drawings
Shown in accompanying drawing, above-mentioned and other purpose, characteristic and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing, focus on illustrating purport of the present invention by physical size equal proportion convergent-divergent.
Fig. 1 is the structural representation of the compound substrate of the embodiment of the invention one;
Fig. 2 is the structural representation of the compound substrate of the embodiment of the invention two;
Fig. 3-4 is for preparing the process synoptic diagram of single-crystal thick films according to the hetero epitaxy of the embodiment of the invention.
Embodiment
For make above-mentioned purpose of the present invention, feature and advantage can be more obviously understandable, does detailed explanation below in conjunction with the accompanying drawing specific embodiments of the invention.
A lot of details have been set forth in the following description so that make much of the present invention; But the present invention can also adopt other to be different from alternate manner described here and implement; Those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention does not receive the restriction of following disclosed specific embodiment.
Secondly, the present invention combines synoptic diagram to be described in detail, when the embodiment of the invention is detailed; For ease of explanation; The sectional view of expression device architecture can be disobeyed general ratio and done local the amplification, and said synoptic diagram is example, and it should not limit the scope of the present invention's protection at this.The three-dimensional space size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Said as the background technology part, normally adopt the dissimilar materials of sapphire or silit etc. to come the growing gallium nitride single crystal thick film in the prior art, and owing to the thermal expansivity of sapphire thermal expansivity greater than gan; When from the growth temperature cool to room temperature, the lattice that sapphire lattice changes greater than gan changes, like this; Will on Sapphire Substrate, produce tensile stress; Produce stress on the gallium nitride single crystal thick film, after dropping to room temperature, warpage can take place in the one-piece construction of gallium nitride single crystal thick film and Sapphire Substrate; And the tensile stress that on sapphire, produces surpasses its stress-at-break, can cause breaking of Sapphire Substrate.Sapphire fracture can further cause the cracking of gallium nitride single crystal thick film, and the size of gallium nitride single crystal that makes final acquisition is restricted the size of gallium nitride single crystal thick film less than the size of former Sapphire Substrate.
Based on this, the invention provides compound substrate, be used for epitaxy III nitride semiconductor single crystal thick film; This compound substrate adopts big thickness, when growth temperature is reduced to room temperature, because compound substrate has big thickness; Stress suffered on the substrate is less than its stress-at-break; When the single-crystal thick films of growth has suitable or thicker thickness, can not cause breaking of compound substrate yet, just can not cause breaking of single-crystal thick films yet; Thereby guaranteed the size of the single-crystal thick films of formation, obtained large-sized single-crystal thick films.
In order to understand the present invention better, below will carry out detailed description to various embodiment.
Embodiment one
In the present embodiment, with reference to shown in Figure 1, this compound substrate 200 comprises the impact plies 110 on foreign substrate 100 and the foreign substrate 100, and the thickness of said foreign substrate 100 is the 0.5-13 millimeter.
More preferably, the thickness of said foreign substrate 100 is the 3-8 millimeter.
In the present invention, foreign substrate refers to the substrate of non-nitride such as sapphire, silit, silicon single crystal, zinc oxide, and impact plies is a nitride film; For example aluminium nitride AlN, gan or gan alloy etc.; The thickness of said impact plies can be for below 50 microns, more preferably, and can be for below 10 microns.
In the present invention, compound substrate is used for epitaxy III nitride semiconductor single crystal thick film, for example gan, aluminium nitride AlN, indium nitride etc.
With reference to shown in Figure 1,, can form through following steps for the compound substrate of this embodiment:
At first, foreign substrate 100 is provided, the thickness of said foreign substrate 100 is 0.5 to 13 millimeter, and more preferably, the thickness of said foreign substrate is 3 to 8 millimeters.
Then, on said foreign substrate 100, form impact plies 110.
Can form this impact plies through MOCVD, HVPE, PECVD, sputter or other suitable methods, the impact plies chemical constitution is a nitride, for example aluminium nitride AlN, gan or gan alloy etc.
Thereby, having formed the compound substrate 200 of big thickness, this compound substrate 200 can be used for epitaxy III nitride semiconductor single crystal thick film, for example gan, aluminium nitride AlN, indium nitride etc.With reference to shown in Figure 3; Can on the impact plies 110 of this compound substrate 200, come hetero epitaxy to prepare single-crystal thick films 300 through suitable methods such as HVPE, in one embodiment, can utilize the method for HVPE to prepare single-crystal thick films; The method for preparing single-crystal thick films all cited application number is the preparation method of single-crystal thick films in 201110119706.6; Because the foreign substrate 100 in this compound substrate 200 has big thickness, makes stress suffered on the compound substrate 200 less than its stress-at-break, in cooling; Can not cause breaking of compound substrate 200, guarantee the size of single-crystal thick films 300.
Further; Behind growth ending; Said compound substrate 200 is removed from single-crystal thick films 300; For example can compound substrate 200 be stripped down from single-crystal thick films 300 with scroll saw, after the technologies such as the further grinding and polishing of single-crystal thick films 300 processes after peeling off, this single-crystal thick films just can be used as the single crystalline substrate that forms device.For the compound substrate after peeling off 200, can pass through technology such as grinding and polishing after, further as the foreign substrate for preparing single-crystal thick films once more, can this compound substrate of recycle, practice thrift manufacturing cost.
Embodiment two
In the present embodiment; With reference to shown in Figure 2; This compound substrate 200 comprises: foreign substrate 100 in first substrate 120, first substrate 120 and the impact plies 110 on the foreign substrate 100, and wherein, said first substrate 120 has identical thermal expansivity with said foreign substrate 100; The thermal expansion coefficient difference of perhaps said first substrate 120 and said foreign substrate 100 is less than 60%, and the thickness of said first substrate 120 is 0.5 to 13 millimeter.
More preferably, the thickness of said first substrate 120 is 3 to 8 millimeters.
In the present embodiment; Said first substrate 120 can have identical thermal expansivity with said foreign substrate 100; That is to say that said first substrate is identical substrate material with foreign substrate, for example the foreign substrate and first substrate all are sapphire, silit, silicon single crystal or zinc oxide etc.When first substrate and foreign substrate are the same substrate material; Can adopt industry to go up general substrate (for example, thickness is that 430 microns the box of opening is promptly used Sapphire Substrate) and prepare the compound substrate that this has bigger thickness, and can recycle; Preparation is simpler and cost is low; Have identical thermal expansivity simultaneously, its stress relief direction is more consistent, the fracture behind the thick film that prevents better to grow during cooling.
In the present embodiment; Said first substrate 120 can also have close thermal expansivity with said foreign substrate 100; That is, the thermal expansion coefficient difference of said first substrate 120 and said foreign substrate 100 is less than 60%, for example; Said foreign substrate can be sapphire, silit, silicon single crystal or zinc oxide etc., and said first substrate can be polycrystalline gan, polycrystalline aluminium nitride AlN, aluminium nitride ceramics, sapphire, silicon single crystal, silit, zinc oxide or glass.
In the present embodiment, said foreign substrate 100 can be the thickness of foreign substrate general in the industry, is generally 430 microns; Also can be the thickness of other specifications; Said first substrate 120 has identical or close thermal expansivity with said foreign substrate 100, and like this, foreign substrate 100 has together improved the net thickness of compound substrate 200 with first substrate 120; When this compound substrate 200 is used for epitaxy III nitride semiconductor single crystal thick film; Be reduced to from growth temperature the room temperature process,, making stress suffered on the compound substrate less than its stress-at-break because the foreign substrate in this compound substrate has big thickness; Can not cause breaking of compound substrate, guarantee the size of single-crystal thick films.
With reference to shown in Figure 2,, can form through following steps for the compound substrate of present embodiment:
At first, foreign substrate 100 is provided, said foreign substrate 100 have first surface 100-1 and with first surface 100-1 opposing second surface 100-2.
Then, on the second surface 100-2 of said foreign substrate, form impact plies 110.
Can form this impact plies through MOCVD, HVPE, PECVD, sputter or other suitable methods, the impact plies chemical constitution is a nitride, for example aluminium nitride AlN, gan or gan alloy etc.
Then, first substrate 120 is provided, and from the first surface 100-1 of said foreign substrate 100 that first substrate 120 is compound with foreign substrate 100; Wherein, Said first substrate 120 has identical thermal expansivity with said foreign substrate 100, and the thermal expansion coefficient difference of perhaps said first substrate 120 and said foreign substrate 100 is less than 60%, and the thickness of said first substrate 120 is 0.5 to 13 millimeter; More preferably, the thickness of said first substrate 120 is 3 to 8 millimeters.
Can first substrate be combined with each other with foreign substrate through the method that resistant to elevated temperatures bonding or wafer engage.
In the present embodiment, can also after first substrate 120 and foreign substrate 100 are compound, carry out (scheming not shown) in the step that forms impact plies 110 on the second surface 100-2 of said foreign substrate.
So far, formed the compound substrate 200 of the big thickness of present embodiment, with embodiment one, this compound substrate can be used for epitaxy III nitride semiconductor single crystal thick film, for example gan, aluminium nitride AlN, indium nitride etc.With reference to shown in Figure 4; Can on the impact plies 110 of this compound substrate 200, come hetero epitaxy to prepare single-crystal thick films 300 through suitable methods such as HVPE; In one embodiment; Can utilize the method for HVPE to prepare single-crystal thick films, the method for preparing single-crystal thick films all cited application number is the preparation method of single-crystal thick films in 201110119706.6.The compound substrate of present embodiment is through will to have first substrate of identical or close thermal expansivity compound with foreign substrate with said foreign substrate; Improved the net thickness of compound substrate; Be reduced in the room temperature process in growth temperature,, make stress suffered on the compound substrate less than its stress-at-break because first substrate in this compound substrate has big thickness; Can not cause breaking of compound substrate, guarantee the size of single-crystal thick films.
Further; With embodiment one; Behind growth ending, said compound substrate 200 is removed from single-crystal thick films 300, for example can compound substrate 200 be stripped down from single-crystal thick films 300 with scroll saw; After the technologies such as the further grinding and polishing of single-crystal thick films 300 processes after peeling off, this single-crystal thick films just can be used as the single crystalline substrate that forms device.For the compound substrate after peeling off 200, can pass through technology such as grinding and polishing after, further as the foreign substrate for preparing single-crystal thick films once more, can this compound substrate of recycle, practice thrift manufacturing cost.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention.Any those of ordinary skill in the art; Do not breaking away under the technical scheme scope situation of the present invention; All the method for above-mentioned announcement capable of using and technology contents are made many possible changes and modification to technical scheme of the present invention, or are revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical scheme of the present invention, all still belongs in the scope of technical scheme protection of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (17)
1. a compound substrate is used for epitaxy III nitride semiconductor single crystal thick film, it is characterized in that, comprising: the impact plies on foreign substrate and the foreign substrate, wherein, the thickness of said foreign substrate is 0.5 to 13 millimeter.
2. compound substrate according to claim 1 is characterized in that, the thickness of said foreign substrate is 3 to 8 millimeters.
3. compound substrate according to claim 1 is characterized in that, said foreign substrate is sapphire, silit, silicon single crystal or zinc oxide.
4. compound substrate; Be used for epitaxy III nitride semiconductor single crystal thick film, it is characterized in that, comprising: the impact plies on first substrate, the first suprabasil foreign substrate and the foreign substrate; Wherein, Said first substrate has identical thermal expansivity with said foreign substrate, and the thermal expansion coefficient difference of perhaps said first substrate and said foreign substrate is less than 60%, and the thickness of said first substrate is 0.5 to 13 millimeter.
5. compound substrate according to claim 4 is characterized in that, the thickness of said first substrate is 3 to 8 millimeters.
6. compound substrate according to claim 4 is characterized in that, said foreign substrate is sapphire, silit, silicon single crystal or zinc oxide.
7. compound substrate according to claim 4 is characterized in that, said first substrate is polycrystalline gan, polycrystalline aluminium nitride AlN, aluminium nitride ceramics, sapphire, silicon single crystal, silit, zinc oxide or glass.
8. the method for manufacture of a compound substrate is characterized in that, comprising:
Foreign substrate is provided, and the thickness of said foreign substrate is 0.5 to 13 millimeter;
On said foreign substrate, form impact plies.
9. method of manufacture according to claim 8 is characterized in that, the method that forms said impact plies is MOCVD, HVPE, PECVD or sputter.
10. method of manufacture according to claim 8 is characterized in that, the thickness of said foreign substrate is 3 to 8 millimeters.
11. the method for manufacture of a compound substrate is characterized in that, comprising:
Foreign substrate is provided, said foreign substrate have first surface and with the first surface opposing second surface;
First substrate is provided; And it is first substrate is compound with foreign substrate from the first surface of said foreign substrate; Wherein, Said first substrate has identical thermal expansivity with said foreign substrate, and the thermal expansion coefficient difference of perhaps said first substrate and said foreign substrate is less than 60%, and the thickness of said first substrate is 0.5 to 13 millimeter.
12. method of manufacture according to claim 11 is characterized in that, before or after first substrate is compound with foreign substrate, also comprises step: on the second surface of said foreign substrate, form impact plies.
13. method of manufacture according to claim 12 is characterized in that, the method that forms said impact plies is MOCVD, HVPE, PECVD or sputter.
14. method of manufacture according to claim 11 is characterized in that, is the method that resistant to elevated temperatures bonding or wafer engage with first substrate with the foreign substrate composite methods.
15. method of manufacture according to claim 11 is characterized in that, the thickness of said first substrate is 3 to 8 millimeters.
16. a hetero epitaxy prepares the method for single-crystal thick films, it is characterized in that the single-crystal thick films of extension formation III group-III nitride semiconductor on the impact plies of each described compound substrate in like claim 1-7.
17. method according to claim 16 after forming single-crystal thick films, also comprises step: said compound substrate is removed from single-crystal thick films, the compound substrate after removing is used for preparing once more the substrate of single-crystal thick films.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560676A (en) * | 2012-01-18 | 2012-07-11 | 山东大学 | Method for performing GaN single crystal growth by using thinned and bonded structure |
| CN103219436A (en) * | 2013-03-27 | 2013-07-24 | 上海萃智科技发展有限公司 | Preparation process for nonpolar GaN epitaxial wafer for LED (light emitting diode) |
| CN105955559A (en) * | 2016-04-28 | 2016-09-21 | 黄小卫 | Reinforcing structure reinforced sapphire substrate and preparation method thereof |
| CN106910675A (en) * | 2017-03-09 | 2017-06-30 | 东莞市中镓半导体科技有限公司 | A kind of compound substrate for preparing nitride electronic devices and preparation method thereof |
| US10600676B2 (en) * | 2012-10-12 | 2020-03-24 | Sumitomo Electric Industries, Ltd. | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device |
| WO2021258820A1 (en) * | 2020-06-24 | 2021-12-30 | 保定中创燕园半导体科技有限公司 | Composite substrate based on an aluminium nitride ceramic material, and preparation method and application therefor |
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| US5512375A (en) * | 1993-10-14 | 1996-04-30 | Intevac, Inc. | Pseudomorphic substrates |
| CN1902747A (en) * | 2004-01-09 | 2007-01-24 | S.O.I.Tec绝缘体上硅技术公司 | Substrate with determinate thermal expansion coefficient |
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| JPH04297023A (en) * | 1991-01-31 | 1992-10-21 | Nichia Chem Ind Ltd | Crystal growth method of gallium nitride compound semiconductor |
| US5512375A (en) * | 1993-10-14 | 1996-04-30 | Intevac, Inc. | Pseudomorphic substrates |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102560676A (en) * | 2012-01-18 | 2012-07-11 | 山东大学 | Method for performing GaN single crystal growth by using thinned and bonded structure |
| CN102560676B (en) * | 2012-01-18 | 2014-08-06 | 山东大学 | Method for performing GaN single crystal growth by using thinned and bonded structure |
| US10600676B2 (en) * | 2012-10-12 | 2020-03-24 | Sumitomo Electric Industries, Ltd. | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device |
| US11094537B2 (en) | 2012-10-12 | 2021-08-17 | Sumitomo Electric Industries, Ltd. | Group III nitride composite substrate and method for manufacturing the same, and method for manufacturing group III nitride semiconductor device |
| CN103219436A (en) * | 2013-03-27 | 2013-07-24 | 上海萃智科技发展有限公司 | Preparation process for nonpolar GaN epitaxial wafer for LED (light emitting diode) |
| CN103219436B (en) * | 2013-03-27 | 2015-09-02 | 上海萃智科技发展有限公司 | The LED preparation technology of non-polar GaN epitaxial wafer |
| CN105955559A (en) * | 2016-04-28 | 2016-09-21 | 黄小卫 | Reinforcing structure reinforced sapphire substrate and preparation method thereof |
| CN106910675A (en) * | 2017-03-09 | 2017-06-30 | 东莞市中镓半导体科技有限公司 | A kind of compound substrate for preparing nitride electronic devices and preparation method thereof |
| WO2021258820A1 (en) * | 2020-06-24 | 2021-12-30 | 保定中创燕园半导体科技有限公司 | Composite substrate based on an aluminium nitride ceramic material, and preparation method and application therefor |
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Application publication date: 20120104 |