CN103219436B - The LED preparation technology of non-polar GaN epitaxial wafer - Google Patents
The LED preparation technology of non-polar GaN epitaxial wafer Download PDFInfo
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- CN103219436B CN103219436B CN201310102763.2A CN201310102763A CN103219436B CN 103219436 B CN103219436 B CN 103219436B CN 201310102763 A CN201310102763 A CN 201310102763A CN 103219436 B CN103219436 B CN 103219436B
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Abstract
The invention discloses a kind of preparation technology of LED non-polar GaN epitaxial wafer, comprise step: (1) prepares GaN, carbon, boron material; (2) GaN, carbon, boron are put together and frit reaction occurs and produces fused mass, make it grow into monocrystalline at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystalline the speed cooling of 5-95 DEG C/h; (3) on the GaN monocrystalline a face generated, grow into monocrystal thin films substrate at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystal thin films substrate the speed cooling of 5-95 DEG C/h; (4) the GaN monocrystal thin films substrate heat treatment process in the temperature range of 300-1200 DEG C generated, substrate slice is formed; (5) substrate slice is cut; (6) the substrate section that cutting obtains is encapsulated.This production technology is simple, and growth cycle is short, and thermal conductivity is high, and lattice mismatch rate is little, can increase substantially the luminance of product.
Description
Technical field
The present invention relates to a kind of preparation technology of LED non-polar GaN epitaxial wafer.
Background technology
The LED of current use is that III group-III nitride growth obtains on sapphire single crystal substrate, because sapphire crystal has the six side symmetrical structures similar to GaN, fusing point 2050 DEG C, working temperature 1900 DEG C, has good high-temperature stability and mechanical mechanics property.Luminous efficiency reaches 28% (needing further growth), and this numerical value is far above the luminous efficiency of normally used incandescent lamp (being about 2%) and fluorescent lamp (about 10%).But also there are three Tough questions in the nitride LED epitaxial wafer of Sapphire Substrate: 1. product price is high; 2. lattice mismatch rate is high; 3. product thermal conductivity is low.
Summary of the invention
The invention provides a kind of preparation technology of LED non-polar GaN epitaxial wafer, which overcome the deficiency existing for background technology.The technical solution adopted for the present invention to solve the technical problems is:
A preparation technology for LED non-polar GaN epitaxial wafer, it comprises step:
(1) GaN, carbon, boron material is prepared;
(2) GaN, carbon, boron are put together and frit reaction occurs and produces fused mass, make it grow into monocrystalline at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystalline the speed cooling of 5-95 DEG C/h;
(3) on the GaN monocrystalline a face generated, grow into monocrystal thin films substrate at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystal thin films substrate the speed cooling of 5-95 DEG C/h;
(4) the GaN monocrystal thin films substrate heat treatment process in the temperature range of 300-1200 DEG C generated, substrate slice is formed;
(5) substrate slice is cut;
(6) the substrate section that cutting obtains is encapsulated.
The technical program is compared with background technology, and its tool has the following advantages:
1. this production technology is simple, and growth cycle is short, and thermal conductivity is high, and lattice mismatch rate is little, can increase substantially the luminance of product.
Embodiment
The invention provides a kind of preparation technology of LED non-polar GaN epitaxial wafer, comprise step:
(1) GaN, carbon, boron material is prepared;
(2) GaN, carbon, boron are put together and frit reaction occurs and produces fused mass, make it grow into monocrystalline at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystalline the speed cooling of 5-95 DEG C/h;
(3) on the GaN monocrystalline a face generated, grow into monocrystal thin films substrate at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystal thin films substrate the speed cooling of 5-95 DEG C/h;
(4) the GaN monocrystal thin films substrate heat treatment process in the temperature range of 300-1200 DEG C generated, substrate slice is formed;
(5) substrate slice is cut into suitable size through cutting machine, and the section of screening different size;
(6) section of the substrate of different size is encapsulated.
The above, be only present pre-ferred embodiments, therefore can not limit scope of the invention process according to this, the equivalence change namely done according to the scope of the claims of the present invention and description with modify, all should still belong in scope that the present invention contains.
Claims (1)
1. a LED preparation technology for non-polar GaN epitaxial wafer, is characterized in that: it comprises step:
(1) GaN, carbon, boron material is prepared;
(2) GaN, carbon, boron are put together and frit reaction occurs and produces fused mass, make it grow into monocrystalline at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystalline the speed cooling of 5-95 DEG C/h;
(3) on the GaN monocrystalline a face generated, grow into monocrystal thin films substrate at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystal thin films substrate the speed cooling of 5-95 DEG C/h;
(4) the GaN monocrystal thin films substrate heat treatment process in the temperature range of 300-1200 DEG C generated, substrate slice is formed;
(5) substrate slice is cut;
(6) the substrate section that cutting obtains is encapsulated.
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CN201310102763.2A CN103219436B (en) | 2013-03-27 | 2013-03-27 | The LED preparation technology of non-polar GaN epitaxial wafer |
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CN201310102763.2A CN103219436B (en) | 2013-03-27 | 2013-03-27 | The LED preparation technology of non-polar GaN epitaxial wafer |
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CN103219436B true CN103219436B (en) | 2015-09-02 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101281863A (en) * | 2008-01-11 | 2008-10-08 | 南京大学 | Method for preparing large scale nonpolar surface GaN self-supporting substrate |
CN101583745A (en) * | 2006-11-14 | 2009-11-18 | 国立大学法人大阪大学 | Process for production of GaN crystals, GaN crystals, GaN crystal substrate, semiconductor devices, and apparatus for production of GaN crystals |
CN102304760A (en) * | 2011-08-12 | 2012-01-04 | 青岛铝镓光电半导体有限公司 | Composite substrate, preparation method of composite substrate and method for preparing single crystal thick film through hetero-epitaxy |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH04328823A (en) * | 1991-04-29 | 1992-11-17 | Epitetsukusu:Kk | Manufacture of epitaxial wafer for light emitting diode |
JP2000049378A (en) * | 1998-07-31 | 2000-02-18 | Rikagaku Kenkyusho | Nitride semiconductor for light emitting element and its manufacture |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101583745A (en) * | 2006-11-14 | 2009-11-18 | 国立大学法人大阪大学 | Process for production of GaN crystals, GaN crystals, GaN crystal substrate, semiconductor devices, and apparatus for production of GaN crystals |
CN101281863A (en) * | 2008-01-11 | 2008-10-08 | 南京大学 | Method for preparing large scale nonpolar surface GaN self-supporting substrate |
CN102304760A (en) * | 2011-08-12 | 2012-01-04 | 青岛铝镓光电半导体有限公司 | Composite substrate, preparation method of composite substrate and method for preparing single crystal thick film through hetero-epitaxy |
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