CN103219436B - The LED preparation technology of non-polar GaN epitaxial wafer - Google Patents

Abstract

The invention discloses a kind of preparation technology of LED non-polar GaN epitaxial wafer, comprise step: (1) prepares GaN, carbon, boron material; (2) GaN, carbon, boron are put together and frit reaction occurs and produces fused mass, make it grow into monocrystalline at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystalline the speed cooling of 5-95 DEG C/h; (3) on the GaN monocrystalline a face generated, grow into monocrystal thin films substrate at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystal thin films substrate the speed cooling of 5-95 DEG C/h; (4) the GaN monocrystal thin films substrate heat treatment process in the temperature range of 300-1200 DEG C generated, substrate slice is formed; (5) substrate slice is cut; (6) the substrate section that cutting obtains is encapsulated.This production technology is simple, and growth cycle is short, and thermal conductivity is high, and lattice mismatch rate is little, can increase substantially the luminance of product.

Description

The LED preparation technology of non-polar GaN epitaxial wafer

Technical field

The present invention relates to a kind of preparation technology of LED non-polar GaN epitaxial wafer.

Background technology

The LED of current use is that III group-III nitride growth obtains on sapphire single crystal substrate, because sapphire crystal has the six side symmetrical structures similar to GaN, fusing point 2050 DEG C, working temperature 1900 DEG C, has good high-temperature stability and mechanical mechanics property.Luminous efficiency reaches 28% (needing further growth), and this numerical value is far above the luminous efficiency of normally used incandescent lamp (being about 2%) and fluorescent lamp (about 10%).But also there are three Tough questions in the nitride LED epitaxial wafer of Sapphire Substrate: 1. product price is high; 2. lattice mismatch rate is high; 3. product thermal conductivity is low.

Summary of the invention

The invention provides a kind of preparation technology of LED non-polar GaN epitaxial wafer, which overcome the deficiency existing for background technology.The technical solution adopted for the present invention to solve the technical problems is:

A preparation technology for LED non-polar GaN epitaxial wafer, it comprises step:

(1) GaN, carbon, boron material is prepared;

(2) GaN, carbon, boron are put together and frit reaction occurs and produces fused mass, make it grow into monocrystalline at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystalline the speed cooling of 5-95 DEG C/h;

(3) on the GaN monocrystalline a face generated, grow into monocrystal thin films substrate at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystal thin films substrate the speed cooling of 5-95 DEG C/h;

(4) the GaN monocrystal thin films substrate heat treatment process in the temperature range of 300-1200 DEG C generated, substrate slice is formed;

(5) substrate slice is cut;

(6) the substrate section that cutting obtains is encapsulated.

The technical program is compared with background technology, and its tool has the following advantages:

1. this production technology is simple, and growth cycle is short, and thermal conductivity is high, and lattice mismatch rate is little, can increase substantially the luminance of product.

Embodiment

The invention provides a kind of preparation technology of LED non-polar GaN epitaxial wafer, comprise step:

(1) GaN, carbon, boron material is prepared;

(2) GaN, carbon, boron are put together and frit reaction occurs and produces fused mass, make it grow into monocrystalline at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystalline the speed cooling of 5-95 DEG C/h;

(3) on the GaN monocrystalline a face generated, grow into monocrystal thin films substrate at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystal thin films substrate the speed cooling of 5-95 DEG C/h;

(4) the GaN monocrystal thin films substrate heat treatment process in the temperature range of 300-1200 DEG C generated, substrate slice is formed;

(5) substrate slice is cut into suitable size through cutting machine, and the section of screening different size;

(6) section of the substrate of different size is encapsulated.

The above, be only present pre-ferred embodiments, therefore can not limit scope of the invention process according to this, the equivalence change namely done according to the scope of the claims of the present invention and description with modify, all should still belong in scope that the present invention contains.

Claims (1)

1. a LED preparation technology for non-polar GaN epitaxial wafer, is characterized in that: it comprises step:

(1) GaN, carbon, boron material is prepared;

(2) GaN, carbon, boron are put together and frit reaction occurs and produces fused mass, make it grow into monocrystalline at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystalline the speed cooling of 5-95 DEG C/h;

(3) on the GaN monocrystalline a face generated, grow into monocrystal thin films substrate at the condition Gradient of 3-15 DEG C/cm low temperature, and generate GaN monocrystal thin films substrate the speed cooling of 5-95 DEG C/h;

(4) the GaN monocrystal thin films substrate heat treatment process in the temperature range of 300-1200 DEG C generated, substrate slice is formed;

(5) substrate slice is cut;

(6) the substrate section that cutting obtains is encapsulated.