CN103219436A - Preparation process for nonpolar GaN epitaxial wafer for LED (light emitting diode) - Google Patents

Abstract

The invention discloses a preparation process for a nonpolar GaN epitaxial wafer for an LED (light emitting diode). The preparation process comprises the following steps of (1) preparing materials of GaN, carbon and boron; (2) placing GaN, carbon and boron together to carry out melting reaction and generate melted materials, enabling the melted materials to grow monocrystal in a low-temperature condition of 3-15 DEG C/cm in a gradient manner, and producing GaN monocrystal at a cooling speed of 5-95 DEG C/hour; (3) growing a monocrystal film substrate in the low-temperature condition of 3-15 DEG C/cm in the gradient manner on a face a of grown GaN monocrystal, and producing a GaN monocrystal film substrate at the cooling temperature of 5-95 DEG C/hour; (4) carrying out heat processing on the grown GaN monocrystal film substrate in a temperature scope of 300-1200 DEG C, and forming a substrate sheet; (5) carrying out cutting on the substrate sheet; and (6) carrying out package on the obtained substrate cut sheet by cutting. The preparation process has the advantages of simpleness, a short growth period, high heat conductivity, small lattice mismatch, and capability of great improving the luminescent rate of a product.

Description

The LED preparation technology of non-polar GaN epitaxial wafer

Technical field

The present invention relates to the preparation technology of a kind of LED with the non-polar GaN epitaxial wafer.

Background technology

At present the LED epitaxial wafer that uses is that the III group-III nitride is grown on the sapphire single-crystal substrate and obtains, because sapphire crystal has the six side symmetrical structures similar to GaN, 2050 ℃ of fusing points, 1900 ℃ of working temperatures have good high-temperature stability and mechanical mechanics property.Luminous efficiency reaches 28%(and is still waiting further growth), this numerical value is far above the luminous efficiency of normally used incandescent lamp (being about 2%) and fluorescent lamp (about 10%).Yet also there are three severe problems in the nitride LED epitaxial wafer of Sapphire Substrate: 1. product price height; 2. lattice mismatch rate height; 3. the product thermal conductivity is low.

Summary of the invention

The invention provides the preparation technology of a kind of LED with the non-polar GaN epitaxial wafer, it has overcome the existing deficiency of background technology.The technical solution adopted for the present invention to solve the technical problems is:

A kind of LED preparation technology of non-polar GaN epitaxial wafer, it comprises step:

(1) prepares GaN, carbon, boron material;

(2) GaN, carbon, boron are put together and frit reaction takes place produce fused mass, make its gradient under the condition of 3-15 ℃/cm low temperature grow into monocrystalline, and the GaN monocrystalline of producing 5-95 ℃/hours speed cooling;

(3) on the GaN monocrystalline a face that generates, gradient grows into the monocrystal thin films substrate under the condition of 3-15 ℃/cm low temperature, and cools off the GaN monocrystal thin films substrate that generates 5-95 ℃/hours speed;

(4), form substrate slice the GaN monocrystal thin films substrate heat treatment process in 300-1200 ℃ temperature range that generates;

(5) substrate slice is cut;

(6) the substrate section that cutting is obtained encapsulates.

The technical program is compared with background technology, and it has following advantage:

1. this production technology is simple, and growth cycle is short, the thermal conductivity height, and the lattice mismatch rate is little, can increase substantially the luminance of product.

Embodiment

The invention provides the preparation technology of a kind of LED, comprise step with the non-polar GaN epitaxial wafer:

(1) prepares GaN, carbon, boron material;

(2) GaN, carbon, boron are put together and frit reaction takes place produce fused mass, make its gradient under the condition of 3-15 ℃/cm low temperature grow into monocrystalline, and the GaN monocrystalline of producing 5-95 ℃/hours speed cooling;

(3) on the GaN monocrystalline a face that generates, gradient grows into the monocrystal thin films substrate under the condition of 3-15 ℃/cm low temperature, and cools off the GaN monocrystal thin films substrate that generates 5-95 ℃/hours speed;

(4), form substrate slice the GaN monocrystal thin films substrate heat treatment process in 300-1200 ℃ temperature range that generates;

(5) substrate slice is cut into suitable dimensions through cutting machine, and the section of screening different size;

(6) section of the substrate of different size is encapsulated.

The above, only for preferred embodiment of the present invention, so can not limit scope of the invention process according to this, i.e. the equivalence of doing according to claim of the present invention and description changes and modification, all should still belong in the scope that the present invention contains.

Claims (1)

1. a LED is with the preparation technology of non-polar GaN epitaxial wafer, and it is characterized in that: it comprises step:

(1) prepares GaN, carbon, boron material;

(2) GaN, carbon, boron are put together and frit reaction takes place produce fused mass, make its gradient under the condition of 3-15 ℃/cm low temperature grow into monocrystalline, and the GaN monocrystalline of producing 5-95 ℃/hours speed cooling;

(3) on the GaN monocrystalline a face that generates, gradient grows into the monocrystal thin films substrate under the condition of 3-15 ℃/cm low temperature, and cools off the GaN monocrystal thin films substrate that generates 5-95 ℃/hours speed;

(4), form substrate slice the GaN monocrystal thin films substrate heat treatment process in 300-1200 ℃ temperature range that generates;

(5) substrate slice is cut;

(6) the substrate section that cutting is obtained encapsulates.