CN101145516A - Silicon base nitride single crystal thin film epitaxial structure and growth method - Google Patents
Silicon base nitride single crystal thin film epitaxial structure and growth method Download PDFInfo
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Abstract
The invention is to solve the problems that a silica-based nitride monocrystal film has high-density crack and dislocation due to larger mismatched stress, and provides an epitaxial method capable of growing SiNx directly on a nucleation layer to reduce the stress, eliminate cracks, reduce the dislocation density and prepare the high-quality nitride film. The method realizes the discontinuous island distribution of a SiNx film on the surface of the nucleation layer by controlling the thickness of the SiNx film, that is, realizes the in-situ formation of a SiNx film island mask on the surface of the nucleation layer. The thickness of the SiNx film is controlled within a range of 2-50nm. Sequentially, the nitride monocrystal film undergoes the selective growth using the SiNx film as the mask until a continuous film with flat surface is formed. As a result, the mismatched stress between the film and the substrate is reduced, the dislocation and crack density is reduced, the epitaxial thickness is increased, and the crystal quality is improved. The invention has the advantages of simple process of mask production, no secondary pollution, easily-realized process of the nitride monocrystal film epitaxy, and high production efficiency.
Description
Technical field
The present invention relates to a kind of growth technology of semiconductor single crystal thin film, especially a kind of epitaxial structure and growing method that contains the silicon base nitride single crystal thin film of thin insert layer.
Background technology
At present, generally adopt sapphire, carborundum (SiC), monocrystalline silicon (Si) backing material as the growing nitride monocrystal thin films, the three compares respectively characteristics: 1) Sapphire Substrate low price, hardness height, thermal conductivity low heat emission poor performance.2) SiC substrate thermal conductivity is good, but the hardness height, crystal mass is relatively poor, and price is very expensive.3) the Si substrate is cheap, and size is big, the crystal mass height, and heat conduction is better, and hardness is little, and the processing technology maturation is easy to realize highly integrated.Therefore, single crystalline Si substrate growing nitride monocrystal thin films technology meets semiconductor applications microminiaturization, development trend cheaply very much, has one of low-cost nitride industrialization technology route of competition potential especially.
But the mismatch stress of single crystalline Si substrate and nitride single crystal film is very big, and for example, Si (111) is respectively 17% and 56% with the lattice mismatch and the coefficient of thermal expansion mismatch of gallium nitride (GaN), is the maximum in three kinds of substrates.Therefore, nitride film very easily produces a large amount of dislocations, and cooling the time highdensity crackle can occur, and more obvious when film thickness increases, the raising of crystal mass and growth thickness is very limited.So highly difficult decision of Si base nitride film growth will be faced huge technological challenge.For different technical schemes has successively appearred in the quality that improves Si base nitride film, the one, growth insert layer technology in nitride film is as low temperature aluminium nitride (AlN) insert layer, low temperature GaN insert layer, high temperature aluminum gallium nitride (AlGaN) insert layer, AlN/AlGaN short period superlattice etc.; But, the crystal mass of materials such as low temperature AI N insert layer, low temperature GaN insert layer, high temperature AlGaN insert layer and AlN/AlGaN short period superlattice itself all is subjected to the influence of growth technique bigger, certain control difficulty is arranged, and also to carry out the coupling and the optimization (as parameters such as growth temperature, film thicknesses) of process conditions as the case may be as the resilient coating that reduces Si base nitride membrane stress, technology realizes that difficulty is higher.The 2nd, the patterned substrate technology is as at substrate surface etching figure and substrate surface dielectric mask etc.Patterned substrate needs earlier to remove the mask medium then doing mask medium, mask figure, various figures of etching on substrate at last again on the substrate; The substrate surface mask needs evaporation or sputter mask medium earlier, photoetching and erode away process such as mask graph then, and preparation process is more loaded down with trivial details, introduces secondary pollution easily.Because mask graph crystal orientation, width, the degree of depth, isoparametric influence at interval on these two kinds of substrates, the growth technique more complicated of nitride needs could grasp its regularity through a large amount of experimental studies.The 3rd, by elevated temperature low temperature GaN layer evaporation the becoming Ga on the Si substrate is dripped and the exposed portions serve surface, feed nitrogenous source again and form SiN on the Si surface
xMasking layer and GaN layer are closed nitrogenous source then the GaN layer are decomposed and the SiN in leave strip cavity
xLayer, this process progressively raise with temperature in 500～1100 ℃ of scopes and finish, though can prepare SiN
xLayer, but complex process, the control difficulty is bigger.In sum, the structure of above-mentioned several relieve stresses or method, not only preparation technology is loaded down with trivial details, has also increased the control difficulty of follow-up nitride film growth technique and the cost of large-scale production.
The key of regulation and control Si base nitride membrane stress is resilient coating or the insert layer that project organization is simple, technology difficulty is low, on the one hand, can discharge the thermal mismatch stress between Si substrate, nucleating layer and the nitride film, reduce the probability that crackle occurs, increase epitaxy layer thickness, on the other hand, discharge lattice mismatch stress, reduce dislocation density, improve the crystal mass of nitride film.
Summary of the invention
The present invention is directed to that there is bigger mismatch stress in Si base nitride monocrystal thin films and the problem that produces high-density crack and dislocation, invent a kind of on nucleating layer direct growth thin layer SiN
xIn order to reduce stress, eliminate crackle, to reduce dislocation density, the epitaxy method of preparation high-quality nitride film.According to film growth principle, SiN
xContinue to grow up on three-dimensional to become island behind nucleating layer 2 surface nucleations, after constantly growing up in the island, some island is interconnected to constitute continuous films.SiN in this method
xThin layer is meant stage and the state before not being connected as yet between island and island.Thickness (or growth time) by control SiNx thin layer under the situation that growth temperature and source flux remain unchanged makes it be discontinuous island on the nucleating layer surface to distribute, this moment, the part surface of nucleating layer 2 was covered by the SiNx island, part in addition is exposed, is equivalent to original position and forms SiN
xThe island mask.SiN
xThe thickness of thin layer generally is controlled in 2～50nm scope, and optimal value is 5～30nm.Then, nitride single crystal film is with SiN
xFor mask carries out selective growth, promptly be grown on the exposed nucleating layer surface, and do not grow,, surfacing nitride film continuous until forming in the position that is covered by the island, thereby reduced mismatch stress and dislocation density between substrate and film, increased epitaxial thickness and improve crystal mass.Simultaneously, also greatly reduce mask preparation technology's difficulty and complexity.In addition, SiN
xThin layer can also stop that Si is from the diffusion of substrate to epitaxial loayer.Here said nitride single crystal film can be the monocrystal thin films of the N of III-V family (InAlGa) based multicomponent alloy.
According to not only can the grow nitride single crystal film of low-dislocation-density of said method, various monocrystal materials of continued growth thereon and device architecture (as light-emitting diode, detector, laser, transistor etc.).
Thin film epitaxy method involved in the present invention can utilize MOCVD (metal organic-matter chemical gas deposition), MBE (molecular beam epitaxy), UHVCVD (high vacuum chemical gas deposition) homepitaxy growing technology to realize.
Technical scheme of the present invention is:
A kind of epitaxial structure and growing method of Si base nitride monocrystal thin films is characterized in that it may further comprise the steps:
The first step, single crystalline Si substrate 1 after cleaning, drying up in reative cell high-temperature baking;
In second step, grow into stratum nucleare 2 on the single crystalline Si substrate 1;
In the 3rd step, SiN grows on nucleating layer 2
x Thin layer 3;
The 4th step is at SiN
xGrowing nitride monocrystal thin films 4 on the thin layer 3;
The 5th step, cooling.
Described nucleating layer 2 is AlN or GaN;
Described SiN
x Thin layer 3 is the surfaces that are grown in nucleating layer 2, and is discontinuous island distribution; Growth temperature is the arbitrary temp in 400～1200 ℃ of scopes;
Described nitride single crystal film 4 is grown in SiN
xOn the thin layer 3, the continuous film of surfacing can be the film of the N of III-V family (InAlGa) based multicomponent alloy.
Single crystalline Si substrate 1 of the present invention after high-temperature baking is handled, growing AIN or GaN nucleating layer 2, SiN
x Thin layer 3, the continuous nitride thing monocrystal thin films 4 of surfacing.Utilize SiN
xThe original position island mask that thin layer forms is the mismatch stress that reduces between nitride single crystal film and the Si substrate, reduces crack density and dislocation density, improves the effective ways of crystal mass.
The present invention has the following advantages:
1, SiN
xBeing grown in the same epitaxial process of mask and nitride single crystal film finished continuously, avoided offing normal preparing the complex process and the secondary pollution of mask, guaranteed the continuity of epitaxy technique.
2, SiN
xThe preparation technology of thin layer is simple, and technological process is shortened, and enhances productivity.
3, the epitaxy technique of nitride single crystal film is controlled easily.
4, effectively reduce the stress and the crack density of nitride single crystal film, increase epitaxial film thickness, improve the epitaxial film quality.
Description of drawings
Figure 1 shows that the epitaxial structure of Si base nitride monocrystal thin films of the present invention and the principle schematic of growing method.
Embodiment
The present invention is further illustrated below in conjunction with drawings and Examples.
A kind of epitaxial structure and growing method of Si base nitride monocrystal thin films, it may further comprise the steps:
The first step, single crystalline Si substrate 1 after cleaning, drying up in reative cell high-temperature baking;
Second step, growing AIN or GaN nucleating layer 2 on the single crystalline Si substrate 1;
In the 3rd step, SiN grows on nucleating layer 2
x Thin layer 3;
The 4th step is at SiN
xGrowing nitride monocrystal thin films 4 on the thin layer 3;
The 5th step, cooling.
The structural representation of nitride single crystal film of the present invention such as Fig. 1.
The present invention is further illustrated below in conjunction with concrete application examples.
Embodiment 1:
1) selects the single crystalline Si substrate, utilize the MOCVD technology growth;
2) 1080 ℃, hydrogen atmosphere baking 10 minutes;
3) be cooled to 1060 ℃, 100Torr fed trimethyl aluminium 30 seconds, formed the Al layer at the Si substrate surface;
4) feed the thick AlN nucleating layer of ammonia and trimethyl aluminium growth 60nm;
5) close trimethyl aluminium, feed the thick SiN of ammonia and silane (100ppm, diluted in hydrogen) growth 30nm
xThin layer;
6) close silane, be cooled to 1040 ℃, feed ammonia and the trimethyl gallium thick GaN monocrystal thin films of 2.0 μ m of growing;
7) be cooled to normal temperature.
Embodiment 2:
1) selects the single crystalline Si substrate, utilize the MOCVD technology growth;
2) 1180 ℃ and 100Torr, hydrogen atmosphere baking 10 minutes;
3) feed trimethyl aluminium and handled 20 seconds, form the Al layer at the Si substrate surface;
4) feed the thick AlN nucleating layer of ammonia and trimethyl aluminium growth 40nm;
5) close trimethyl aluminium, feed the thick SiN of ammonia and silane (100ppm, diluted in hydrogen) growth 2nm
xThin layer;
6) close silane, be cooled to 1050 ℃, feed ammonia and the trimethyl aluminium thick AlN monocrystal thin films of 1.0 μ m of growing;
7) be cooled to normal temperature.
Embodiment 3:
1) selects the single crystalline Si substrate, utilize the MOCVD technology growth;
2) 1100 ℃ and 100Torr, hydrogen atmosphere baking 10 minutes;
3) be cooled to 1060 ℃, feed trimethyl aluminium and handled 30 seconds, form the Al layer at the Si substrate surface;
4) feed the thick AlN nucleating layer of ammonia and trimethyl aluminium growth 60nm;
5) close trimethyl aluminium, be cooled to 400 ℃, treat to feed ammonia and the thick SiN of silane (100ppm, diluted in hydrogen) growth 10nm behind the temperature stabilization
xThin layer;
6) close silane, be cooled to 1040 ℃, feed ammonia, trimethyl gallium and the trimethyl aluminium thick AlGaN monocrystal thin films of 1.0 μ m of growing;
7) be cooled to normal temperature.
Embodiment 4:
1) selects the single crystalline Si substrate, utilize the MOCVD technology growth;
2) 1100 ℃ and 100Torr, hydrogen atmosphere baking 10 minutes;
3) be cooled to 1060 ℃, fed trimethyl aluminium 30 seconds, form the Al layer at the Si substrate surface;
4) feed the thick AlN nucleating layer of ammonia and trimethyl aluminium growth 80nm;
5) close trimethyl aluminium, be cooled to 820 ℃,, treat to feed ammonia and the thick SiN of silane (100ppm, diluted in hydrogen) growth 20nm behind the temperature stabilization
xThin layer;
6) close silane, feed ammonia, trimethyl indium, trimethyl gallium and the trimethyl aluminium thick InGaAlN monocrystal thin films of 1.0 μ m of growing;
7) be cooled to normal temperature.
Embodiment 5:
1) selects the single crystalline Si substrate, utilize the MOCVD technology growth;
2) 100Torr and 1100 ℃, hydrogen atmosphere baking 10 minutes;
3) be cooled to 600 ℃, feed the thick GaN nucleating layer of ammonia and trimethyl gallium growth 35nm;
5) close trimethyl gallium, be cooled to 540 ℃, treat to feed ammonia and the thick SiN of silane (100ppm, diluted in hydrogen) growth 60nm behind the temperature stabilization
xThin layer;
6) close silane, feed ammonia and the trimethyl indium thick InN monocrystal thin films of 1.0 μ m of growing;
7) be cooled to normal temperature.
Embodiment 6:
1) selects the single crystalline Si substrate, utilize the MOCVD technology growth;
2) 100Torr and 1100 ℃, hydrogen atmosphere baking 10 minutes;
3) be cooled to 600 ℃, feed the thick GaN nucleating layer of ammonia and trimethyl gallium growth 35nm;
5) close trimethyl gallium, treat to feed ammonia and the thick SiN of silane (100ppm, diluted in hydrogen) growth 40nm behind the temperature stabilization
xThin layer;
6) close silane, feed ammonia, trimethyl indium, the trimethyl gallium thick InGaN monocrystal thin films of 1.0 μ m of growing;
7) be cooled to normal temperature.
Claims (6)
1. the epitaxial structure of silicon base nitride single crystal thin film and growing method is characterized in that it may further comprise the steps:
(1) monocrystalline substrate after cleaning, drying up in reative cell high-temperature baking;
(2) on monocrystalline substrate, grow into stratum nucleare;
(3) thin layer of on nucleating layer, growing;
(4) the smooth continuous nitride thing monocrystal thin films of growing surface on thin layer.
2. the epitaxial structure of silicon base nitride single crystal thin film according to claim 1 and growing method is characterized in that described thin layer is SiN
x, be grown in the surface of nucleating layer.
3. the epitaxial structure of silicon base nitride single crystal thin film according to claim 2 and growing method, the growth thickness scope that it is characterized in that described SiNx thin layer is 2～60nm, optimal value is 10～30nm.
4. the epitaxial structure of silicon base nitride single crystal thin film according to claim 2 and growing method, the growth temperature that it is characterized in that described SiNx thin layer are any one temperature in 400～1200 ℃ of scopes.
5. the epitaxial structure of silicon base nitride single crystal thin film according to claim 2 and growing method is characterized in that described SiNx thin layer is discontinuous island structure, and the part surface of nucleating layer is covered by it, and part in addition is exposed.
6. the epitaxial structure of silicon base nitride single crystal thin film according to claim 1 and growing method is characterized in that described nitride single crystal film is the N of III-V family (InAlGa) based multicomponent alloy film.
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Assignee: NANJING GUOSHENG ELECTRONIC Co.,Ltd. Assignor: CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION NO.55 Research Institute Contract record no.: 2010320000060 Denomination of invention: Silicon base nitride single crystal thin film epitaxial growth method Granted publication date: 20090610 License type: Exclusive License Open date: 20080319 Record date: 20100220 |
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