CN111029256A - Method for patterning aluminum nitride and silicon carbide composite structure and composite structure - Google Patents

Method for patterning aluminum nitride and silicon carbide composite structure and composite structure Download PDF

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CN111029256A
CN111029256A CN201911164821.8A CN201911164821A CN111029256A CN 111029256 A CN111029256 A CN 111029256A CN 201911164821 A CN201911164821 A CN 201911164821A CN 111029256 A CN111029256 A CN 111029256A
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silicon carbide
aluminum nitride
composite structure
carbide substrate
film layer
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CN111029256B (en
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阮勇
尤政
张高飞
周元楷
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Tsinghua University
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Tsinghua University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Abstract

The application provides a graphical method of an aluminum nitride and silicon carbide composite structure and the composite structure. By the method for patterning the aluminum nitride and silicon carbide composite structure, when the silicon carbide structure and the aluminum nitride structure are prepared, Cl-based etching gas is adopted for AlN (an aluminum nitride thin film layer), so that the lateral corrosion of AlN is small, the piezoelectric property of AlN is effectively maintained, and the piezoelectric property is not damaged in the patterning process. Meanwhile, SiO formed through the silicon dioxide thin film layer and the second mask layer (photoresist mask layer)2The photoresist composite mask layer can protect an AlN pattern while rapidly etching SiC (silicon carbide substrate), thereby improving the pattern quality. And by adopting fluorine-based gas etching on SiC, the etching rate of SiC is effectively improved while AlN is protected, and the processing efficiency of the device is improved.

Description

Method for patterning aluminum nitride and silicon carbide composite structure and composite structure
Technical Field
The application relates to the field of sensor manufacturing, in particular to a patterning method of an aluminum nitride and silicon carbide composite structure and the aluminum nitride and silicon carbide composite structure.
Background
The aluminum nitride (AlN) and silicon carbide (SiC) composite structure has wide application or potential application prospect in microelectronic technology, microsystem technology and sensor technology. In the process of manufacturing a high-temperature piezoelectric sensor based on an AlN and SiC composite structure, the AlN and SiC composite structure need to be patterned separately. The copying precision and the pattern quality of AlN thin film pattern transfer have important influence on the performance of a device, the property of AlN needs to be protected from being damaged preferentially in the AlN patterning process, and an etching mode for avoiding AlN undercut needs to be selected. After AlN is etched, the SiC substrate is very difficult to etch deeply, and the AlN graph needs to be protected, and meanwhile, the etching speed needs to be higher, the processing efficiency needs to be improved, and the cost needs to be saved. Therefore, the AlN and SiC composite structure is very difficult to etch, and a high-precision pattern with a complex structure is not easy to manufacture.
In the traditional AlN and SiC composite structure patterning method, the etching process of an AlN material in a chemical corrosive liquid of the AlN material is difficult to control, the transferred pattern quality is poor, and the etching rate and the pattern quality are seriously dependent on the crystallization quality of an AlN thin film, so that the AlN and SiC composite structure is difficult to prepare.
Disclosure of Invention
Therefore, it is necessary to provide a patterning method for an AlN and SiC composite structure, which can protect an AlN pattern and ensure a fast etching rate, and has high processing efficiency and cost saving, in view of the problem that the conventional patterning method for an AlN and SiC composite structure is difficult to prepare.
The application provides a graphical method of an aluminum nitride and silicon carbide composite structure, which comprises the following steps:
s10, providing a silicon carbide substrate, and preparing an aluminum nitride film layer on the surface of the silicon carbide substrate;
s20, preparing a first mask layer on the surface of the aluminum nitride film layer far away from the silicon carbide substrate according to the aluminum nitride mask pattern;
s30, placing the silicon carbide substrate with the first mask layer in a plasma etching vacuum cavity, and etching the aluminum nitride thin film layer by adopting chlorine-based mixed gas plasma to obtain an aluminum nitride structure;
and S40, removing the first mask layer.
In one embodiment, the method for patterning an aluminum nitride and silicon carbide composite structure further comprises:
s50, preparing a silicon dioxide film layer on the surface of the aluminum nitride structure and the surface of the silicon carbide substrate;
s60, preparing a second mask layer on the surface of the silicon dioxide film layer far away from the silicon carbide substrate according to the silicon dioxide mask pattern;
s70, putting the silicon carbide substrate with the second mask layer into a corrosive liquid for corrosion, and exposing an etching window of the silicon carbide substrate;
s80, placing the silicon carbide substrate with the etching window into a plasma etching vacuum chamber, and etching the silicon carbide substrate by adopting fluorine-based mixed gas plasma to obtain a silicon carbide structure;
and S90, removing the second mask layer and the silicon dioxide film layer, wherein the aluminum nitride structure and the silicon carbide structure form an aluminum nitride and silicon carbide composite structure.
In one embodiment, in the S30, the chlorine-based mixed gas plasma is BCl3、Cl2And plasma generated from the mixed gas of Ar.
In one embodiment, in the step S30, the air pressure is set to be 0.3 Pa-0.5 Pa, and BCl3The flow rate is 14sccm to 16sccm and Cl2And placing the silicon carbide substrate prepared with the first mask layer into a plasma etching vacuum chamber at a flow rate of 34-36 sccm, and etching the aluminum nitride thin film layer.
In one embodiment, the plasma enhanced chemical vapor deposition method is adopted in the step S50, the temperature is set to be 280-320 ℃, the time is set to be 380-400S, the pressure is set to be 1600-1800 torr, and SiH is set4And N2And the flow rate ratio of O is 1:1, and the silicon dioxide film layer is prepared on the surface of the aluminum nitride structure and the surface of the silicon carbide substrate.
In one embodiment, the silicon dioxide thin film layer covers the surface of the aluminum nitride structure and the surface of the silicon carbide substrate, and the thickness of the silicon dioxide thin film layer is larger than that of the aluminum nitride structure.
In one embodiment, in the S80, the fluorine-based mixed gas plasma is SF6、O2And plasma generated from the mixed gas of Ar.
In one embodiment, in the step S80, the air pressure is set to be 0.4 Pa-0.6 Pa, and SF6The flow rate is 49sccm to 51sccm and O2And the silicon carbide substrate with the etching window is placed into a plasma etching vacuum chamber at the flow rate of 9-11 sccm, and the silicon carbide substrate is etched from the etching window.
In one embodiment, in the step S10, the aluminum nitride thin film layer is prepared on the surface of the silicon carbide substrate by using a magnetron sputtering method, setting a radio frequency power of 190W to 210W, a sputtering pressure of 4mT to 5mT, a nitrogen to argon flow ratio of 3:2, and a growth time of 1.9h to 2.1 h.
In one embodiment, the second mask layer is a photoresist mask layer.
In one embodiment, an aluminum nitride and silicon carbide composite structure is prepared using the method of patterning an aluminum nitride and silicon carbide composite structure as described in any of the above embodiments.
The application provides a graphical method of the aluminum nitride and silicon carbide composite structure. In S10, the aluminum nitride thin film layer (AlN film) prepared on the surface of the silicon carbide substrate is an AlN film having good c-axis (002) orientation, and has good piezoelectric properties. In S20, the first mask layer is prepared according to the aluminum nitride mask pattern, and the portion of the surface of the aluminum nitride thin film layer not provided with the mask layer is etched by the first mask layer to protect the portion provided with the first mask layer.
In S30, the aluminum nitride film (AlN film) is slowly etched by using a combination of physical bombardment and chemical reaction through an Inductively Coupled Plasma Etching (ICPE) method to obtain a structure with a neat and smooth edge and a good verticality. And the aluminum nitride film layer is etched by adopting the chlorine-based mixed gas plasma, so that the lateral corrosion of the aluminum nitride film layer is small, the influence on the piezoelectric layer performance of the AlN film layer is small, and the piezoelectric performance of the AlN film is effectively maintained. Therefore, the piezoelectric performance is not damaged in the patterning process of the method for patterning the aluminum nitride and silicon carbide composite structure, and the aluminum nitride and silicon carbide composite structure with high patterning quality can be obtained. Therefore, by the method for patterning the aluminum nitride and silicon carbide composite structure, the aluminum nitride film layer is subjected to small lateral corrosion, the silicon carbide Substrate (SiC) can be quickly etched under the condition of protecting the AlN film piezoelectric layer, the processing efficiency is high, and the problems that the etching process of an AlN material in a chemical etching solution of the AlN material is difficult to control and the transferred pattern quality is poor in the traditional method are solved.
Drawings
FIG. 1 is a schematic flow diagram of a method for patterning a composite structure of aluminum nitride and silicon carbide provided herein;
FIG. 2 is a flow chart of a process for fabricating an aluminum nitride structure according to the present application;
FIG. 3 is an SEM image of an aluminum nitride (AlN) film grown on a silicon carbide Substrate (SiC) provided herein;
FIG. 4 is an XRD pattern of an aluminum nitride thin film layer (AlN) grown on a silicon carbide Substrate (SiC) as provided herein;
FIG. 5 is an SEM image of a chlorine-based gas etching aluminum nitride thin film layer to prepare an aluminum nitride structure provided by the present application;
FIG. 6 is a flow chart of a process for preparing an aluminum nitride and silicon carbide composite structure provided herein;
FIG. 7 is an SEM image of a fluorine-based gas etching of a silicon carbide Substrate (SiC) to produce a silicon carbide structure as provided herein.
Description of the reference numerals
The silicon nitride/silicon carbide composite structure comprises an aluminum nitride/silicon carbide composite structure 100, a silicon carbide substrate 10, an etching window 110, an aluminum nitride thin film layer 20, an aluminum nitride structure 210, a first mask layer 30, a silicon dioxide thin film layer 40, a second mask layer 50 and SiO2The photoresist composite mask layer 200.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is further described in detail below by way of embodiments and with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The numbering of the components as such, e.g., "first", "second", etc., is used herein only to distinguish the objects as described, and does not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings). In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present application and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be considered as limiting the present application.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Referring to fig. 1-2, the present application provides a method for patterning a composite structure of aluminum nitride and silicon carbide, comprising:
s10, providing a silicon carbide substrate 10, and preparing an aluminum nitride thin film layer 20 on the surface of the silicon carbide substrate 10;
s20, preparing a first mask layer 30 on the surface of the aluminum nitride film layer 20 far away from the silicon carbide substrate 10 according to the aluminum nitride mask pattern;
s30, placing the silicon carbide substrate 10 with the first mask layer 30 in a plasma etching vacuum chamber, and etching the aluminum nitride thin film layer 20 by adopting chlorine-based mixed gas plasma to obtain an aluminum nitride structure 210;
s40, removing the first mask layer 30.
In S10, the aluminum nitride thin film layer 20(AlN film) prepared on the surface of the silicon carbide substrate 10 is a 0.1 μm to 2.5 μm mal n thin film having a good c-axis (002) orientation (see fig. 3 to 4), and has a good piezoelectric property. In S20, the first mask layer 30 is prepared according to the aluminum nitride mask pattern. The aluminum nitride mask pattern is the same pattern that is desired to be fabricated to obtain the aluminum nitride film structure (i.e., the same pattern as the aluminum nitride structure 210). And etching the part, which is not provided with the mask layer, on the surface of the aluminum nitride thin film layer 20 through the first mask layer 30, and protecting the part provided with the first mask layer 30. The first mask layer 30 is a photoresist that is difficult to be etched in chlorine-based plasma etching, so that sufficient protection can be performed during etching.
In S30, the aluminum nitride film layer 20(AlN film) is slowly etched by using a combination of physical bombardment and chemical reaction through an Inductively Coupled Plasma Etching (ICPE) method to obtain a structure with a neat and smooth edge and a good verticality. Moreover, by etching the aluminum nitride thin film layer 20 by adopting the chlorine-based mixed gas plasma, the lateral corrosion of the aluminum nitride thin film layer 20 is small, the influence on the piezoelectric layer performance of the AlN thin film layer is small, and the piezoelectric performance of the AlN thin film is effectively maintained. Therefore, the piezoelectric performance is not damaged in the patterning process of the method for patterning the aluminum nitride and silicon carbide composite structure, and the aluminum nitride and silicon carbide composite structure with high patterning quality can be obtained. Therefore, by the method for patterning the aluminum nitride and silicon carbide composite structure, the aluminum nitride film layer 20 is subjected to small lateral corrosion, the silicon carbide substrate 10(SiC) can be quickly etched under the condition of protecting the AlN film piezoelectric layer, the processing efficiency is high, and the problems that the etching process of an AlN material in a chemical etching solution of the AlN material is difficult to control and the transferred pattern quality is poor in the traditional method are solved.
In one embodiment, in S10, the aluminum nitride thin film layer 20 is prepared on the surface of the silicon carbide substrate 10 by using a magnetron sputtering method, setting a rf power of 190W to 210W, a sputtering pressure of 4mT to 5mT, a nitrogen to argon flow ratio of 3:2, and a growth time of 1.9h to 2.1 h.
Wherein the radio frequency power can be set to 200W, and the temperature of the single crystal substrate of the silicon carbide substrate 10 is 150 ℃ during preparation. Setting the sputtering pressure to be 4.5mT, the flow ratio of nitrogen to argon to be 3:2 and the growth time to be 2h, and preparing the aluminum nitride thin film layer 20 with the thickness of 1.5 mu m on the surface of the silicon carbide substrate 10. Through the S10, the aluminum nitride thin film layer 20 having a good c-axis (002) orientation AlN thin film (see fig. 3) having good piezoelectric properties can be prepared on the surface of the silicon carbide substrate 10.
In S20, the first mask layer 30 is a photoresist. And spin-coating AZ5214 photoresist 6 microns on the surface of the aluminum nitride film layer 20 far away from the silicon carbide substrate 10, and performing photoetching to form a photoresist pattern, namely the first mask layer 30. At this time, the photoresist pattern is the same as the aluminum nitride structure 210 (pattern of the desired AlN film).
In one embodiment, in the S30, the chlorine-based mixed gas plasma is BCl3、Cl2And plasma generated from the mixed gas of Ar. By BCl3、Cl2And plasma generated by the mixed gas of Ar etches the aluminum nitride film layer 20, so that the lateral corrosion of the aluminum nitride film layer (AlN) is small, the piezoelectric property of the AlN is effectively maintained, and the piezoelectric property is not damaged in the patterning process.
In one embodiment, in S30, the silicon carbide substrate 10 with the first mask layer 30 is placed in a plasma etching vacuum chamber, and the vacuum chamber is evacuated to 0.19 pascal by using BCl3、 Cl2And plasma generated from mixed gas of ArThe daughter etches the portion of the aluminum nitride film layer 20(AlN film) where the first mask layer 30 is not disposed. Wherein, the air pressure is set to be 0.3Pa to 0.5Pa, BCl3The flow rate is 14sccm to 16sccm and Cl2And placing the silicon carbide substrate 10 with the first mask layer 30 in a plasma etching vacuum chamber at a flow rate of 34 sccm-36 sccm, and etching the aluminum nitride thin film layer 20.
Preferably, the ICP power is set at 300W, the gas pressure is 0.4Pa, BCl3Flow rate 15sccm, Cl2Flow rate 35 sccm, RF power 80W. By setting the above process conditions, the structure shown in fig. 5 can be obtained, and at this time, the edge of the aluminum nitride structure 210 obtained after etching the aluminum nitride thin film layer 20 is neat and smooth, and the verticality is good.
In S40, the first mask layer 30 (photoresist mask layer) is removed by a 99.8% acetone solution at room temperature.
Referring to fig. 1 and 3, in an embodiment, the method for patterning the aluminum nitride and silicon carbide composite structure further includes:
s50, preparing a silicon dioxide film layer 40 on the surface of the aluminum nitride structure 210 and the surface of the silicon carbide substrate 10;
s60, preparing a second mask layer 50 on the surface of the silicon dioxide film layer 40 far away from the silicon carbide substrate 10 according to the silicon dioxide mask pattern;
s70, putting the silicon carbide substrate 10 with the second mask layer 50 into a corrosive liquid for corrosion, and exposing the etching window 110 of the silicon carbide substrate 10;
s80, placing the silicon carbide substrate 10 with the etching window 110 into a plasma etching vacuum chamber, and etching the silicon carbide substrate 10 by adopting fluorine-based mixed gas plasma to obtain a silicon carbide structure 120;
s90, removing the second mask layer 50 and the silicon dioxide thin film layer 40, and forming the aluminum nitride and silicon carbide composite structure 100 by the aluminum nitride structure 210 and the silicon carbide structure 120.
In S50, the silicon dioxide thin film layer 40 is prepared on the surface of the aluminum nitride structure 210 away from the silicon carbide substrate 10 and the surface of the silicon carbide substrate 10 close to the aluminum nitride structure 210 by Plasma Enhanced Chemical Vapor Deposition (PECVD)/LPCVD, so as to cover the surface of the aluminum nitride structure 210 and the surface of the silicon carbide substrate 10.
Preferably, the temperature is set to 280 ℃ to 320 ℃, the time is 380s to 400s, the pressure is 1600torr to 1800torr and SiH4And N2The flow rate ratio of O is 1:1, and the silicon dioxide film layer 40 with the thickness of 2 μm is prepared on the surface of the aluminum nitride structure 210 and the surface of the silicon carbide substrate 10. At this time, the silicon dioxide thin film layer 40 may protect the entire aluminum nitride structure 210, thereby protecting the aluminum nitride structure 210(AlN pattern) while rapidly etching the silicon carbide substrate 10 (SiC).
In one embodiment, the thickness of the silicon dioxide thin film layer 40 is greater than the thickness of the aluminum nitride structure 210, so that the sidewall of the aluminum nitride structure 210 can be protected.
In S60, according to the silicon dioxide mask pattern, spin-coating a photoresist 1.6 μm micrometer on the surface of the silicon dioxide thin film layer 40 away from the silicon carbide substrate 10, and performing photolithography to form a photoresist pattern, i.e., the second mask layer 50. At this time, the second mask layer 50 (photoresist pattern) is opposite to the desired pattern of the silicon carbide substrate 10(SiC substrate), and at this time, etching is performed on a position where the second mask layer 50 (photoresist pattern) is not provided.
In S70, the silicon carbide substrate 10 with the second mask layer 50 is etched in a BOE etching solution. At this time, according to the second mask layer 50 (photoresist pattern), the silicon dioxide without photoresist is etched to expose the etching window 110 of the silicon carbide substrate 10.
At this time, a silicon dioxide thin film layer 40 and a second mask layer 50 (photoresist mask layer) are formed on the surface of the aluminum nitride structure 210 away from the silicon carbide substrate 10 to form SiO2The photoresist composite mask layer 200. SiO 22The mask material used for the photoresist composite mask layer 200 is SiO which is difficult to be etched in fluorine-based plasma etching2The mask is combined with the photoresist, so that the aluminum nitride structure 210 can be fully protected when etching is performed. By the SiO2The aluminum nitride structure 210 may be better protected by the photoresist composite mask layer 200. Furthermore, when the silicon carbide substrate 10(SiC) is rapidly etched through the etching window 110, the aluminum nitride structure 210 is better protected, the etching process is easier to control, and the pattern quality of the aluminum nitride structure 210 is improved.
In S80, the silicon carbide substrate 10 with the etching window 110 is placed in a plasma etching vacuum chamber, vacuum pumping is performed to 0.5 pascal, and the silicon carbide substrate 10 is etched by using fluorine-based mixed gas plasma.
Wherein the fluorine-based mixed gas plasma is SF6、O2And plasma generated from the mixed gas of Ar. When the silicon carbide substrate 10(SiC) is etched by the fluorine-based mixed gas plasma, the aluminum nitride structure 210 is protected, the etching rate of the silicon carbide substrate 10(SiC) is effectively increased, and the processing efficiency of the device is improved.
In the S80, the air pressure is set to be 0.4 Pa-0.6 Pa, and SF6The flow rate is 49sccm to 51sccm and O2And placing the silicon carbide substrate 10 with the etching window 110 into a plasma etching vacuum chamber at a flow rate of 9-11 sccm, and etching the silicon carbide substrate 10 through the etching window 110.
Preferably, the ICP power is set at 1200W, gas pressure 0.5Pa, SF6Flow rate 50sccm, O2Flow rate 10sccm and RF power 80W through the SF6、O2And plasma generated by the mixed gas of Ar etches the silicon carbide substrate 10(SiC) to obtain an etched silicon carbide substrate (i.e., the silicon carbide structure 120). As shown in fig. 7, the silicon carbide structure 120 after the etching at S80 shows that the edge of the silicon carbide structure 120 is neat and smooth, and the verticality is good. At this time, the aluminum nitride and the carbideThe silicon composite structure 100 includes the silicon carbide structure 120 and the aluminum nitride structure 210.
In S90, the second mask layer 50 and the silicon dioxide thin film layer 40 are removed in BOE etching solution, i.e. SiO is removed2And removing the photoresist composite mask layer 200 to obtain the patterned aluminum nitride and silicon carbide composite structure 100.
In one embodiment, an aluminum nitride and silicon carbide composite structure 100 is prepared using the aluminum nitride and silicon carbide composite structure patterning method as described in any of the above embodiments.
By the method for patterning the aluminum nitride and silicon carbide composite structure, when the silicon carbide structure 120 and the aluminum nitride structure 210 are prepared, a Cl-based etching gas is adopted for AlN (the aluminum nitride thin film layer 20), so that the lateral corrosion of AlN is small, the piezoelectric property of AlN is effectively maintained, and the piezoelectric property is not damaged in the patterning process. Meanwhile, SiO formed through the silicon dioxide thin film layer 40 and the second mask layer 50 (photoresist mask layer)2The photoresist composite mask layer 200 can protect an AlN pattern while rapidly etching SiC (silicon carbide substrate 10), thereby improving the pattern quality. And by adopting fluorine-based gas etching on SiC, the etching rate of SiC is effectively improved while AlN is protected, and the processing efficiency of the device is improved.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (11)

1. A method for patterning an aluminum nitride and silicon carbide composite structure is characterized by comprising the following steps:
s10, providing a silicon carbide substrate (10), and preparing an aluminum nitride thin film layer (20) on the surface of the silicon carbide substrate (10);
s20, preparing a first mask layer (30) on the surface of the aluminum nitride film layer (20) far away from the silicon carbide substrate (10) according to the aluminum nitride mask pattern;
s30, placing the silicon carbide substrate (10) with the first mask layer (30) in a plasma etching vacuum cavity, and etching the aluminum nitride thin film layer (20) by adopting chlorine-based mixed gas plasma to obtain an aluminum nitride structure (210);
and S40, removing the first mask layer (30).
2. The method of patterning an aluminum nitride and silicon carbide composite structure according to claim 1, further comprising:
s50, preparing a silicon dioxide film layer (40) on the surface of the aluminum nitride structure (210) and the surface of the silicon carbide substrate (10);
s60, preparing a second mask layer (50) on the surface of the silicon dioxide film layer (40) far away from the silicon carbide substrate (10) according to the silicon dioxide mask pattern;
s70, putting the silicon carbide substrate (10) with the second mask layer (50) into a corrosive liquid for corrosion, and exposing the etching window (110) of the silicon carbide substrate (10);
s80, placing the silicon carbide substrate (10) with the etching window (110) into a plasma etching vacuum cavity, and etching the silicon carbide substrate (10) by adopting fluorine-based mixed gas plasma to obtain a silicon carbide structure (120);
s90, removing the second mask layer (50) and the silicon dioxide film layer (40), and forming an aluminum nitride and silicon carbide composite structure (100) by the aluminum nitride structure (210) and the silicon carbide structure (120).
3. Such asThe method of patterning an aluminum nitride and silicon carbide composite structure according to claim 1, wherein in the S30, the chlorine-based mixed gas plasma is BCl3、Cl2And plasma generated from the mixed gas of Ar.
4. The method of patterning a composite structure of aluminum nitride and silicon carbide according to claim 3, wherein in the S30, a gas pressure of 0.3Pa to 0.5Pa, BCl is set3The flow rate is 14sccm to 16sccm and Cl2And placing the silicon carbide substrate (10) with the first mask layer (30) in a plasma etching vacuum chamber at the flow rate of 34-36 sccm, and etching the aluminum nitride thin film layer (20).
5. The method of claim 2, wherein the step of patterning the aluminum nitride and silicon carbide composite structure in S50 comprises a step of performing a Plasma Enhanced Chemical Vapor Deposition (PECVD) at a temperature of 280 ℃ to 320 ℃, a time of 380S to 400S, a pressure of 1600torr to 1800torr, and a SiH4And N2And the flow rate ratio of O is 1:1, and the silicon dioxide film layer (40) is prepared on the surface of the aluminum nitride structure (210) and the surface of the silicon carbide substrate (10).
6. The method of patterning a composite structure of aluminum nitride and silicon carbide according to claim 5, wherein the silicon dioxide thin film layer (40) covers the surface of the aluminum nitride structure (210) and the surface of the silicon carbide substrate (10), and the thickness of the silicon dioxide thin film layer (40) is greater than the thickness of the aluminum nitride structure (210).
7. The method of patterning a composite structure of aluminum nitride and silicon carbide according to claim 2, wherein in S80 the fluorine-based mixed gas plasma is SF6、O2And plasma generated from the mixed gas of Ar.
8. The method of patterning a composite structure of aluminum nitride and silicon carbide according to claim 7Characterized in that in the S80, the air pressure is set to be 0.4 Pa-0.6 Pa, and SF6The flow rate is 49sccm to 51sccm and O2And the flow rate is 9-11 sccm, the silicon carbide substrate (10) with the etching window (110) is placed into a plasma etching vacuum chamber, and the silicon carbide substrate (10) is etched from the etching window (110).
9. The method of claim 1, wherein the aluminum nitride thin film layer (20) is formed on the surface of the silicon carbide substrate (10) by magnetron sputtering under a sputtering pressure of 4mT to 5mT with a RF power of 190W to 210W and a nitrogen to argon flow ratio of 3:2 for a growth time of 1.9h to 2.1h in S10.
10. The method of patterning a composite structure of aluminum nitride and silicon carbide according to claim 2, wherein the second mask layer (50) is a photoresist mask layer.
11. An aluminum nitride and silicon carbide composite structure prepared by the method for patterning an aluminum nitride and silicon carbide composite structure according to any one of claims 1 to 10.
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