CN106898676A - 一种可修复界面复合态的方法 - Google Patents

一种可修复界面复合态的方法 Download PDF

Info

Publication number
CN106898676A
CN106898676A CN201710065104.4A CN201710065104A CN106898676A CN 106898676 A CN106898676 A CN 106898676A CN 201710065104 A CN201710065104 A CN 201710065104A CN 106898676 A CN106898676 A CN 106898676A
Authority
CN
China
Prior art keywords
deposition
pulse
tunic
deposited
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710065104.4A
Other languages
English (en)
Other versions
CN106898676B (zh
Inventor
李静
乐雄英
钞智权
邓行平
衣玉林
王学成
吴帅
王超
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Shenyang Photovoltaic Technology Co.,Ltd.
Original Assignee
SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co Ltd filed Critical SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co Ltd
Priority to CN201710065104.4A priority Critical patent/CN106898676B/zh
Publication of CN106898676A publication Critical patent/CN106898676A/zh
Application granted granted Critical
Publication of CN106898676B publication Critical patent/CN106898676B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/0231—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to electromagnetic radiation, e.g. UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Formation Of Insulating Films (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明公开了一种可修复界面复合态的方法，将原先的等离子体预处理步骤更改到了中间，即沉积完一层膜后再开始等离子体预处理，将原先的步骤：等离子体预处理→沉积第一层膜→沉积第二层膜的过程改为沉积第一层膜→等离子体预处理→沉积第二层膜→沉积第三层膜。这样不仅氧化层受到了保护，提高了抗电势诱导衰减效果，同时在沉积完了第二层膜后，氮化硅的活性比较高，在界面区域容易产生复合，增加一层等离子体预处理，可以使沉积的氮化硅界面的复合得到比较好的修复，减少复合的产生，增强了晶硅电池的钝化效果，提升电池的转换效率。

Description

一种可修复界面复合态的方法
技术领域
本发明涉及太阳能电池生产领域，特别涉及一种可修复界面复合态的方法。
背景技术
太阳能电池的镀膜过程是借助微波或射频等使含有薄膜组成原子的气体电离，在局部形成等离子体，而等离子化学活性很强，很容易发生反应，在基片上沉积出所期望的薄膜，根据薄膜的干涉原理，在电池表面镀一层或多层薄膜，可以有效减少光的反射，这种膜属于减反射膜，氮化硅膜作为太阳能电池的减反射膜，如果将氮化硅膜设计成不同厚度的多层膜，合理匹配各层膜之间的膜厚与折射率，就可以拓展电池对光的吸收，进一步降低硅片的光反射，还可以使电池的转换效率明显提高，同时也可以提高氮化硅膜对电池的钝化效果。传统的的氮化硅膜在沉积前，有一步等离子体预处理，会对硅片表面进行吹扫，容易将抗电势诱导衰减的氧化层损伤；同时双层氮化硅减反射膜是连续沉积的，可以一定程度扩大薄膜的反射带增加光吸收，但也存在一些问题，如沉积的高活性的氮化硅薄膜的界面地方复合严重，导致钝化效果不好，短波光吸收较少等。
发明内容
为了克服上述缺陷，本发明提供了一种可修复界面复合态的方法，增强晶硅太阳能电池的抗电势诱导效果，同时减少电池氮化硅薄膜界面的复合，提高晶硅太阳能电池的转换效率。
本发明为了解决其技术问题所采用的技术方案是：一种可修复界面复合态的方法，按照如下的步骤进行：
步骤一，沉积一，将硅片放入镀膜炉管中，保持载舟温度为400-500℃，以2-10℃/min的速率升温至440-500℃进行沉积，按照压力1500 mTor,氨气流量3900slm，硅烷流量820sccm，射频功率7000瓦，最大电流28A，脉冲开5ms，脉冲关50ms的标准进行沉积，沉积时间100s；
步骤二、等离子体预处理，温度为455℃，按照压力1500mTor,氨气流量3000slm，氮气流量3000slm，射频功率6200瓦，最大电流30A，脉冲开6ms，脉冲关12ms的标准进行等离子体预处理，预处理时间18s；
步骤三，沉积二，按照温度为455℃，压力1500 mTor,氨气流量3900slm，硅烷流量820sccm，射频功率7000瓦，最大电流28A，脉冲开5ms，脉冲关50ms的标准进行沉积，沉积时间90s；
步骤三，沉积三，按照温度为455℃，压力1600 mTor,氨气流量5400slm，硅烷流量750sccm，射频功率7000瓦，最大电流28A，脉冲开5ms，脉冲关50ms的标准进行沉积，沉积时间390s。
本发明的有益效果是：将原先的等离子体预处理步骤更改到了中间，即沉积完一层膜后再开始等离子体预处理，将原先的步骤：等离子体预处理→沉积第一层膜→沉积第二层膜的过程改为沉积第一层膜→等离子体预处理→沉积第二层膜→沉积第三层膜。这样不仅氧化层受到了保护，提高了抗电势诱导衰减效果，同时在沉积完了第二层膜后，氮化硅的活性比较高，在界面区域容易产生复合，增加一层等离子体预处理，可以使沉积的氮化硅界面的复合得到比较好的修复，减少复合的产生，增强了晶硅电池的钝化效果，提升电池的转换效率。
具体实施方式
本发明在原生产工艺基础上进行了改进，但是本发明可以由权利要求限定和覆盖的多种不同方式实施。
1. 沉积一，将硅片放入镀膜炉管中，保持载舟温度为400-500℃，以2-10℃/min的速率升温至440-500℃进行沉积，按照压力1500 mTor,氨气流量3900slm，硅烷流量820sccm，射频功率7000瓦，最大电流28A，脉冲开5ms，脉冲关50ms的标准进行沉积，沉积时间100s；
2.等离子体预处理，温度为455℃，按照压力1500mTor,氨气流量3000slm，氮气流量3000slm，射频功率6200瓦，最大电流30A，脉冲开6ms，脉冲关12ms的标准进行等离子体预处理，预处理时间18s；
3.沉积二，按照温度为455℃，压力1500 mTor,氨气流量3900slm，硅烷流量820sccm，射频功率7000瓦，最大电流28A，脉冲开5ms，脉冲关50ms的标准进行沉积，沉积时间90s；
4.沉积三，按照温度为455℃，压力1600 mTor,氨气流量5400slm，硅烷流量750sccm，射频功率7000瓦，最大电流28A，脉冲开5ms，脉冲关50ms的标准进行沉积时间390s；
5.工艺结束后，降温卸载硅片。
运用传统镀膜工艺与新镀膜工艺所生产的电池片效率及参数对比图表
说明：从表的对比数值可以看出，镀膜工艺改进后所生产电池片效率提高约有 0.10%，各项参数（开路电压与短路电流）指标也相应提高，反映了电池品质的提升。
本专利通过对镀膜生产工艺的调节，通过三步沉积氮化硅薄膜，优化了镀膜工艺，对提高晶硅电池转换效率起到了明显效果。
以上所述仅为本发明示意性的具体实施方式，并非用以限定本发明的范围。任何本领域的技术人员，在不脱离本发明的构思和原则的前提下所作的等同变化、修改与结合，均应属于本发明保护的范围。

Claims (1)

1.一种可修复界面复合态的方法，其特征在于：按照如下的步骤进行：
步骤一，沉积一，将硅片放入镀膜炉管中，保持载舟温度为400-500℃，以2-10℃/min的速率升温至440-500℃进行沉积，按照压力1500 mTor,氨气流量3900slm，硅烷流量820sccm，射频功率7000瓦，最大电流28A，脉冲开5ms，脉冲关50ms的标准进行沉积，沉积时间100s；
步骤二、等离子体预处理，温度为455℃，按照压力1500mTor,氨气流量3000slm，氮气流量3000slm，射频功率6200瓦，最大电流30A，脉冲开6ms，脉冲关12ms的标准进行等离子体预处理，预处理时间18s；
步骤三，沉积二，按照温度为455℃，压力1500 mTor,氨气流量3900slm，硅烷流量820sccm，射频功率7000瓦，最大电流28A，脉冲开5ms，脉冲关50ms的标准进行沉积，沉积时间90s；
步骤三，沉积三，按照温度为455℃，压力1600 mTor,氨气流量5400slm，硅烷流量750sccm，射频功率7000瓦，最大电流28A，脉冲开5ms，脉冲关50ms的标准进行沉积，沉积时间390s。
CN201710065104.4A 2017-02-06 2017-02-06 一种可修复氮化硅界面复合态的方法 Active CN106898676B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710065104.4A CN106898676B (zh) 2017-02-06 2017-02-06 一种可修复氮化硅界面复合态的方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710065104.4A CN106898676B (zh) 2017-02-06 2017-02-06 一种可修复氮化硅界面复合态的方法

Publications (2)

Publication Number Publication Date
CN106898676A true CN106898676A (zh) 2017-06-27
CN106898676B CN106898676B (zh) 2018-11-27

Family

ID=59198566

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710065104.4A Active CN106898676B (zh) 2017-02-06 2017-02-06 一种可修复氮化硅界面复合态的方法

Country Status (1)

Country Link
CN (1) CN106898676B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110112063A (zh) * 2019-05-24 2019-08-09 浙江晶科能源有限公司 一种太阳能电池片的表面钝化处理方法
CN110137312A (zh) * 2019-06-13 2019-08-16 天合光能股份有限公司 一种提高氮化硅钝化性能的方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101956180A (zh) * 2010-07-14 2011-01-26 中国科学院电工研究所 一种减反射薄膜SiNx:H表面原位NH3等离子体处理方法
US20120028398A1 (en) * 2010-07-27 2012-02-02 Jeong-Mo Hawang Systems and methods for charging solar cell layers
CN102386277A (zh) * 2011-10-17 2012-03-21 浙江贝盛光伏股份有限公司 多层镀膜工艺
JP5019397B2 (ja) * 2006-12-01 2012-09-05 シャープ株式会社 太陽電池およびその製造方法
CN102723370A (zh) * 2012-06-18 2012-10-10 湖南红太阳光电科技有限公司 一种用于太阳能电池的宽光谱多层减反钝化膜
CN102903626A (zh) * 2012-10-29 2013-01-30 镇江大全太阳能有限公司 具有硅片表面清洗功能的氮化硅镀膜方法
CN103290374A (zh) * 2013-06-08 2013-09-11 中利腾晖光伏科技有限公司 一种晶体硅太阳能电池片镀膜工艺
US20140087496A1 (en) * 2012-09-27 2014-03-27 Sunpower Corporation Methods and structures for forming and protecting thin films on substrates
CN105633175A (zh) * 2015-12-23 2016-06-01 泰州德通电气有限公司 一种可以降低抗pid电池外观不良率的工艺
CN106282965A (zh) * 2016-08-31 2017-01-04 东方日升新能源股份有限公司 太阳能电池硅片的等离子增强化学气相沉积法

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5019397B2 (ja) * 2006-12-01 2012-09-05 シャープ株式会社 太陽電池およびその製造方法
CN101956180A (zh) * 2010-07-14 2011-01-26 中国科学院电工研究所 一种减反射薄膜SiNx:H表面原位NH3等离子体处理方法
US20120028398A1 (en) * 2010-07-27 2012-02-02 Jeong-Mo Hawang Systems and methods for charging solar cell layers
CN102386277A (zh) * 2011-10-17 2012-03-21 浙江贝盛光伏股份有限公司 多层镀膜工艺
CN102723370A (zh) * 2012-06-18 2012-10-10 湖南红太阳光电科技有限公司 一种用于太阳能电池的宽光谱多层减反钝化膜
US20140087496A1 (en) * 2012-09-27 2014-03-27 Sunpower Corporation Methods and structures for forming and protecting thin films on substrates
CN102903626A (zh) * 2012-10-29 2013-01-30 镇江大全太阳能有限公司 具有硅片表面清洗功能的氮化硅镀膜方法
CN103290374A (zh) * 2013-06-08 2013-09-11 中利腾晖光伏科技有限公司 一种晶体硅太阳能电池片镀膜工艺
CN105633175A (zh) * 2015-12-23 2016-06-01 泰州德通电气有限公司 一种可以降低抗pid电池外观不良率的工艺
CN106282965A (zh) * 2016-08-31 2017-01-04 东方日升新能源股份有限公司 太阳能电池硅片的等离子增强化学气相沉积法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110112063A (zh) * 2019-05-24 2019-08-09 浙江晶科能源有限公司 一种太阳能电池片的表面钝化处理方法
CN110137312A (zh) * 2019-06-13 2019-08-16 天合光能股份有限公司 一种提高氮化硅钝化性能的方法

Also Published As

Publication number Publication date
CN106898676B (zh) 2018-11-27

Similar Documents

Publication Publication Date Title
CN112216799B (zh) 一种钝化钙钛矿的方法及钙钛矿太阳能电池的制备工艺
CN110112243A (zh) 太阳能电池的背面钝化结构及其制备方法
CN107768467B (zh) 一种硅基太阳能电池及其制备方法
CN109768165B (zh) 一种钙钛矿太阳能电池及其制备方法
CN108695408B (zh) 一种管式pecvd沉积氮化硅叠层减反射膜工艺
CN109087965B (zh) 一种背面钝化的晶体硅太阳能电池及其制备方法
CN107845701A (zh) Perc电池背面al2o3叠加膜层工艺
JP2014096569A (ja) 銅・インジウム・ガリウム・セレニウム（ｃｉｇｓ）または銅・亜鉛・錫・硫黄（ｃｚｔｓ）系薄膜型太陽電池及びその製造方法
Kobayashi et al. Comparison of cell performance of ZnS (O, OH)/CIGS solar cells with UV-assisted MOCVD-ZnO: B and sputter-deposited ZnO: Al window layers
CN102856174A (zh) 氮化硅的膜制备方法、具有氮化硅膜的太阳能电池片及其制备方法
CN108878570B (zh) 空穴选择型MoOx/SiOx(Mo)/n-Si异质结、太阳电池器件及其制备方法
CN106898676A (zh) 一种可修复界面复合态的方法
CN112820783A (zh) 一种氮氧化硅perc电池背钝化结构、其制备方法及包括其的perc电池
CN106409926A (zh) 一种晶硅电池多层钝化膜及其制造方法
US11823849B2 (en) Efficient and stable inorganic lead-free perovskite solar cell and method for preparing the same
CN109545975A (zh) 绒面均匀钙钛矿膜的液膜抑爬原位冷冻升华析晶制备方法
CN104393061B (zh) 一种晶体硅太阳能电池减反射膜及其制备工艺
Zhang et al. Pyrolysis preparation of WO3 thin films using ammonium metatungstate DMF/water solution for efficient compact layers in planar perovskite solar cells
CN112259620A (zh) 一种Sb2Se3薄膜太阳能电池及其制备方法
CN104701390A (zh) 太阳能电池背面钝化方法
CN104091839A (zh) 一种用于太阳能电池片的减反射膜及其制造方法
CN114335236A (zh) 钝化接触电池及其制备方法和钝化接触结构及其制备装置
CN106601588A (zh) 一种氧化硅钝化层的制备方法
CN107863415B (zh) 一种热氧化结合pecvd提升太阳能电池片转化效率的方法
CN112713216B (zh) 一种太阳能电池的层叠减反射膜的制备方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: 215300, 8 floor, science and Technology Plaza, Qianjin East Road, Kunshan Development Zone, Suzhou, Jiangsu.

Patentee after: Jiangsu Runyang New Energy Technology Co.,Ltd.

Address before: 215300, 8 floor, science and Technology Plaza, Qianjin East Road, Kunshan Development Zone, Suzhou, Jiangsu.

Patentee before: SUZHOU RUNYANG PHOTOVOLTAIC TECHNOLOGY Co.,Ltd.

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right

Effective date of registration: 20201217

Address after: No.1, Beijing Road, development zone, Jianhu County, Yancheng City, Jiangsu Province, 224000

Patentee after: Jiangsu Shenyang Photovoltaic Technology Co.,Ltd.

Address before: 215300, 8 floor, science and Technology Plaza, Qianjin East Road, Kunshan Development Zone, Suzhou, Jiangsu.

Patentee before: Jiangsu Runyang New Energy Technology Co.,Ltd.

TR01 Transfer of patent right