CN106898615A - 反射型阵列基板及其制备方法、显示装置 - Google Patents
反射型阵列基板及其制备方法、显示装置 Download PDFInfo
- Publication number
- CN106898615A CN106898615A CN201710113747.1A CN201710113747A CN106898615A CN 106898615 A CN106898615 A CN 106898615A CN 201710113747 A CN201710113747 A CN 201710113747A CN 106898615 A CN106898615 A CN 106898615A
- Authority
- CN
- China
- Prior art keywords
- layer
- reflection
- underlay substrate
- base palte
- array base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 239000010410 layer Substances 0.000 claims description 171
- 239000011241 protective layer Substances 0.000 claims description 20
- 239000012528 membrane Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 31
- 238000005516 engineering process Methods 0.000 abstract description 18
- 230000008569 process Effects 0.000 abstract description 18
- 230000008859 change Effects 0.000 abstract description 5
- 239000000463 material Substances 0.000 description 13
- 239000010408 film Substances 0.000 description 8
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- -1 AlNd Chemical class 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133553—Reflecting elements
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133357—Planarisation layers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/13356—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements
- G02F1/133567—Structural association of cells with optical devices, e.g. polarisers or reflectors characterised by the placement of the optical elements on the back side
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
- G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/50—Protective arrangements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Liquid Crystal (AREA)
Abstract
本发明实施例提供一种反射型阵列基板及其制备方法、显示装置。反射型阵列基板包括衬底基板,设置在衬底基板正面的阵列结构层,以及光反射层,所述光反射层设置在衬底基板背离所述阵列结构层的背面。本发明实施例通过将光反射层设置在衬底基板的背面,在形成阵列结构层工艺后形成光反射层,相对于利用像素电极作为光反射层的现有技术,避免了在过厚的平坦化层上进行过孔工艺,相对于将光反射层设置在阵列结构层下方的现有技术,避免了阵列结构层工艺的低温要求。本发明实施例降低了反射型LCD制备工艺的难度,且无需对现有制备工艺进行较大改动。
Description
技术领域
本发明涉及显示技术领域,具体涉及一种反射型阵列基板及其制备方法、显示装置。
背景技术
液晶显示(Liquid Crystal Display,LCD)按照采光方式可以分为透射型、反射型和半反半透型。其中,反射型LCD是利用环境光(如太阳光)的反射进行显示,相比于有背光源的透射型LCD,反射型LCD没有背光源,因此具有对比度高、功耗低、机身薄以及重量轻等优点,且采用自然光反射显示,有利于视觉保护。因此,反射型LCD被越来越多地应用于诸如手机、笔记本电脑、数码相机、个人数字助理等便携式电子终端。
现有反射型LCD的主体结构包括对盒的阵列(Thin Film Transistor,TFT)基板和彩膜(Color Filter,CF)基板,液晶(Liquid Crystal,LC)填充在阵列基板和彩膜基板之间,阵列基板上设置对外界入射的光线进行反射的光反射结构。目前,现有技术一种光反射结构是利用像素电极作为光反射层,考虑到光反射层的平坦性对反射率的影响至关重要,因此需要在制备光反射层之前进行平坦化处理,但过厚的平坦化层不仅对过孔工艺造成较大难度,而且降低了像素电极通过过孔与漏电极连接的可靠性。现有技术另一种光反射结构是将光反射层设置在阵列结构层的下方,即先在衬底基板上制备光反射层,然后在光反射层上进行阵列结构层工艺。然而,这种结构形式增加了制备阵列结构层工艺的难度,其原因在于,光反射层所采用的高分子压印材料承受温度低,且厚度较厚,要求后续阵列结构层工艺过程低温进行。因此,如何降低反射型LCD制备工艺的难度,是本领域亟待解决的技术问题。
发明内容
本发明实施例所要解决的技术问题是,提供一种反射型阵列基板及其制备方法、显示装置,以解决现有结构制备工艺难度大的技术问题。
为了解决上述技术问题,本发明实施例提供了一种反射型阵列基板,包括衬底基板,设置在衬底基板正面的阵列结构层,以及光反射层,所述光反射层设置在衬底基板背离所述阵列结构层的背面。
可选地,所述光反射层包括设置在衬底基板背面的用于形成光反射结构的构形层、设置在所述构形层上的反射层、以及设置在反射层上的保护层。
可选地,所述反射层包括规则排布的多个反射结构,每个反射结构为凸面体。
可选地,所述凸面体包括三角形体、梯形体和/或弧形体。
可选地,所述三角形体、梯形体或弧形体的侧面与衬底基板平面之间的夹角为5度~30度。
可选地,所述构形层的厚度为5~10μm,所述反射层的厚度为100~1000nm,所述保护层的厚度为5~10μm。
本发明实施例还提供了一种显示装置,包括对盒的阵列基板和彩膜基板,所述阵列基板采用如上所述的反射型阵列基板。
本发明实施例还提供了一种反射型阵列基板的制备方法,包括:
衬底基板的正面制备阵列结构层;
在衬底基板背离阵列结构层的背面制备光反射层。
可选地,所述在衬底基板背离阵列结构层的背面制备光反射层包括:
在衬底基板背离阵列结构层的背面制备构形层;
在构形层上制备反射层;
在反射层上制备保护层。
可选地,所述反射层包括规则排布的多个反射结构,每个反射结构包括三角形体、梯形体和/或弧形体,所述三角形体、梯形体或弧形体的侧面与衬底基板平面之间的夹角为5度~30度;所述构形层的厚度为5~10μm,所述反射层的厚度为100~1000nm,所述保护层的厚度为5~10μm。
本发明实施例提供的反射型阵列基板及其制备方法、显示装置,通过将光反射层设置在衬底基板的背面,在形成阵列结构层工艺后形成光反射层,相对于利用像素电极作为光反射层的现有技术,避免了在过厚的平坦化层上进行过孔工艺,相对于将光反射层设置在阵列结构层下方的现有技术,避免了阵列结构层工艺的低温要求。本发明实施例降低了反射型LCD制备工艺的难度,且无需对现有制备工艺进行较大改动。
当然,实施本发明的任一产品或方法并不一定需要同时达到以上所述的所有优点。本发明的其它特征和优点将在随后的说明书实施例中阐述,并且,部分地从说明书实施例中变得显而易见,或者通过实施本发明而了解。本发明实施例的目的和其他优点可通过在说明书、权利要求书以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本发明技术方案的进一步理解,并且构成说明书的一部分,与本申请的实施例一起用于解释本发明的技术方案,并不构成对本发明技术方案的限制。附图中各部件的形状和大小不反映真实比例,目的只是示意说明本发明内容。
图1为本发明实施例反射型LCD的结构示意图;
图2为本发明反射型阵列基板第一实施例的结构示意图;
图3为图2中区域A的放大图;
图4为本发明第一实施例制备方法的流程图;
图5为本发明反射型阵列基板第二实施例的结构示意图。
附图标记说明:
1—阵列基板; | 2—彩膜基板; | 3—液晶; |
10—衬底基板; | 11—阵列结构层; | 12—光反射层; |
111—栅电极; | 112—栅绝缘层; | 113—有源层; |
114—源漏电极; | 115—钝化层; | 116—像素电极; |
117—平坦化层; | 121—构形层; | 122—反射层; |
123—保护层。 |
具体实施方式
下面结合附图和实施例对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明,但不用来限制本发明的范围。需要说明的是,在不冲突的情况下,本申请中的实施例及实施例中的特征可以相互任意组合。
针对现有反射型LCD制备工艺难度大的技术问题,本发明实施例提供了一种反射型LCD。图1为本发明实施例反射型LCD的结构示意图,如图1所示,本发明实施例反射型LCD的主体结构包括对盒的阵列基板1和彩膜基板2,液晶3填充在阵列基板和彩膜基板之间,彩膜基板2包括衬底基板20和形成在衬底基板20上的彩膜结构层21,阵列基板1包括衬底基板10、阵列结构层11和光反射层12,阵列结构层11设置在衬底基板10朝向彩膜基板2的正面,光反射层12设置在衬底基板10背离阵列结构层11的背面,且光反射层12是在阵列结构层11工艺后形成。光反射层12用于反射环境光,从而利用环境光为反射式LCD提供背光。本发明实施例通过将光反射层设置在衬底基板的背面,在形成阵列结构层工艺后形成光反射层,有效降低了反射型LCD制备工艺的难度。
LCD按照显示模式可以分为扭曲向列(Twisted Nematic,TN)显示模式、平面转换(In Plane Switching,IPS)显示模式、边缘场开关(Fringe Field Switching,FFS)显示模式和高级超维场转换(Advanced Super Dimension Switch,ADS)显示模式等。下面以TN显示模式反射型LCD为例说明本发明实施例的技术方案,但本发明实施例的应用不限于此,也可以应用到其它显示模式的反射型LCD中。
第一实施例
图2为本发明反射型阵列基板第一实施例的结构示意图。如图2所示,本实施例反射型阵列基板包括衬底基板10,设置在衬底基板10正面的阵列结构层11,以及设置在衬底基板10背面(即衬底基板背离阵列结构层11一侧表面)的光反射层12。本实施例中,“正面”是指反射式LCD使用时朝向观看者一侧的表面,环境光由该侧入射,“背面”是指背向观看者的表面。具体地,光反射层12包括构形层121、反射层122和保护层123。其中,构形层121设置在衬底基板10的背面,并形成光反射结构,反射层122设置在构形层121上,保护层123设置在反射层122上。阵列结构层11包括在衬底基板10上依次设置的栅电极111、栅绝缘层112、有源层113、源漏电极114、钝化层115、像素电极116和平坦化层117,像素电极通过钝化层上开设的过孔与源电极或漏电极连接。其中,栅电极、有源层和源漏电极形成薄膜晶体管。
图3为图2中区域A的放大图。如图3所示,本实施例所提供的反射型阵列基板中,反射层122包括规则排布的多个反射结构,每个反射结构为凸面体。本实施例中,凸面体为三角形体(金字塔形体),其横截面为三角形,三角形的底角α为5度~30度,即三角形体的侧面与衬底基板平面的夹角为5度~30度,形成与衬底基板背面呈α角的4个反射面。三角形体的每个反射面对环境光(如太阳光)入射的光线进行反射,且调节反射光线的方向至像素区域,因此本实施例反射层可有效提高环境光的利用率,保证了反射型LCD的显示亮度。本实施例中,三角形体(凸面体)是指以衬底基板背面为基准,所形成的向外凸出的形状,三角形体实质上是三角形壳体,其内表面作为反射环境光的反射面。在具体实施时,反射层122采用反射率较高的金属材料,如Al、Cu、Mo、Ti、Ag等金属以及这些金属的合金,如AlNd,厚度为100~1000nm,提高了反射效率。构形层采用纳米压印材料,纳米压印材料采用高透过率的有机硅材料,如环氧等,也可以采用其它适合的材料,保护层可以采用树脂或硅的氮化物SiNx。为了提高反射光线的均匀性,凸面体设置为轴对称,三角形体的底角α可以根据像素区域大小、阵列结构层厚度等参数并结合实际情况来设置。优选地,三角形体的底角α为10度~15度,以最大限度地提高环境光利用率。在具体实施时,三角形体也可以设置为非轴对称,三角形体一侧反射面的底角大于另一侧反射面的底角,形成一侧的反射面大于另一侧的反射面,可最大限度地将反射光线调节到对应的像素区域。进一步地,相邻的三角形体之间,既可以间隔一设定的距离,也可以连续设置(如图2所示,间隔距离=0)。
本实施例反射型阵列基板包括形成在衬底基板上的多条栅线和多条数据线,各行栅线与各列数据线垂直相交,在衬底基板上形成阵列排布的多个像素区域,每个区域像素设置薄膜晶体管和像素电极,栅线用于向对应的薄膜晶体管提供扫描信号,响应于栅线扫描信号,薄膜晶体管导通,从而将来自数据线的电压施加到像素电极上。
下面通过阵列基板制备过程进一步说明本实施例的技术方案。
图4为本发明第一实施例制备方法的流程图。如图4所示,本实施例阵列基板制备方法包括:
S10、衬底基板的正面制备阵列结构层;
S20、在衬底基板背离阵列结构层的背面制备光反射层。
本实施例中,首先在衬底基板的一侧表面(正面)上通过构图工艺制备阵列结构层,完成阵列结构层制备之后,在衬底基板的另一侧表面(即衬底基板背离阵列结构层的背面)上制备光反射层。本实施例中所说的“构图工艺”包括沉积膜层、涂覆光刻胶、掩模曝光、显影、刻蚀、剥离光刻胶等处理,是现有成熟的制备工艺,各膜层材料、工艺、参数等均是已知的。制备阵列结构层包括在衬底基板上形成薄膜晶体管、栅线和数据线、栅绝缘层、钝化层和像素电极,还可以包括其他膜层,如平坦化层等,本领域技术人员能够根据公知常识以及现有技术获知,这里不作具体限定。
本实施例中,制备光反射层包括:
S201、在衬底基板背离阵列结构层的背面制备构形层;
S202、在构形层上制备反射层;
S203、在反射层上制备保护层。
本实施例中,在衬底基板的正面制备阵列结构层完成后,在衬底基板的背面进行光反射层工艺。步骤S201中,先在衬底基板的背面涂布一层纳米压印薄膜,厚度为5~10μm,采用纳米压印工艺在压印薄膜表面压制出规则排布的多个凸面体图形,经固化处理后,形成构形层。步骤S202中,在已形成的构形层上沉积一层金属薄膜,厚度为100~1000nm,使得所沉积的金属薄膜具有构形层表面相同的形貌,形成多个凸面体规则排布的反射层。步骤S203中,在已形成的反射层上涂布一层树脂材料,厚度5~10μm,经固化处理后形成保护层,保护层同时作为平坦层,使得衬底基板的背面平坦化。金属薄膜可以采用反射率较高的金属材料,如Al、Cu、Mo、Ti、Ag等金属以及这些金属的合金,如AlNd,纳米压印材料可以采用高透过率的有机硅材料,如环氧等,也可以采用其它适合的材料,保护层还可以采用树脂、硅的氮化物SiNx等。构形层和保护层的固化处理温度及时间视实际需要而定,约为200~250℃左右。沉积可采用溅射、蒸镀、化学气相沉积等已知工艺,涂布和压印可采用已知的涂布工艺和压印工艺,在此不做具体的限定。
本实施例所提供的反射型阵列基板,通过将光反射层设置在衬底基板的背面,在形成阵列结构层工艺后形成光反射层,无需对现有制备工艺进行较大改动,降低了反射型LCD制备工艺的难度,并可以有效保证光反射效果。
第二实施例
本实施例所提供的反射型阵列基板的主体结构与第一实施例相同,包括衬底基板10,设置在衬底基板10正面的阵列结构层11,以及设置在衬底基板10背面的光反射层12,光反射层12包括构形层121、反射层122和保护层123,反射层122包括规则排布的多个反射结构,每个反射结构为凸面体。图5为本发明反射型阵列基板第二实施例的结构示意图。如图5所示,与第一实施例不同的是,本实施例凸面体为梯形体,其横截面为等腰梯形,梯形的底角α为5度~30度,即梯形体的侧面与衬底基板平面的夹角为5度~30度,形成5个反射面,与衬底基板背面平行的1个反射面,以及与衬底基板背面呈α角的4个反射面。优选地,等腰梯形底角α为10度~15度。在具体实施时,凸面体也可以是圆台体。本实施例通过设置多个反射面,不仅可有效地将反射光线调节到对应的像素区域,提高环境光利用率,而且可以降低制备光反射层的工艺难度。本实施例阵列结构层、构形层、反射层和保护层的材料及制备方法与第一实施例相同,这里不再赘述。
第三实施例
本实施例所提供的反射型阵列基板的主体结构与第一实施例相同,包括衬底基板10,设置在衬底基板10正面的阵列结构层11,以及设置在衬底基板10背面的光反射层12,光反射层12包括构形层121、反射层122和保护层123,反射层122包括规则排布的多个反射结构,每个反射结构为凸面体。与第一实施例不同的是,本实施例凸面体为弧形体,其横截面为弧形,弧形的底角α为5度~30度,即弧形体的侧面与衬底基板平面的夹角为5度~30度,形成连续的反射面。优选地,弧形的底角α为10度~15度。本实施例通过设置连续的反射面,不仅可有效地将反射光线调节到对应的像素区域,提高环境光利用率,而且可以降低制备反射层的工艺难度。本实施例阵列结构层、构形层、反射层和保护层的材料及制备方法与第一实施例相同,这里不再赘述。
第四实施例
在前述实施例技术方案基础上,本实施例的凸面体为不同形状的组合结构,即凸面体的横截面形状不同。例如,凸面体为三角形体和梯形体的组合结构,即凸面体的横截面分别为三角形和梯形,且按照间隔方式排列,两个三角形体之间为梯形体,两个梯形体之间为三角形体。又如,凸面体为三角形体、梯形体和弧形体的组合结构,即凸面体的横截面分别为三角形、梯形和弧形,且按照预设的方式排列。
第五实施例
基于同一发明构思,本发明实施例还提供了一种反射型LCD,LCD包括前述任一实施例的反射型阵列基板,以及与反射型阵列基板对盒的彩膜基板。反射型LCD可以为:手机、笔记本电脑、数码相机、导航仪、个人数字助理等具有显示功能的产品或部件,重复之处不再赘述。
综上所述,本发明实施例提供的反射型阵列基板及其制备方法、显示装置,通过将光反射层设置在衬底基板的背面,在形成阵列结构层工艺后形成光反射层,相对于利用像素电极作为光反射层的现有技术,避免了在过厚的平坦化层上进行过孔工艺,相对于将光反射层设置在阵列结构层下方的现有技术,避免了阵列结构层工艺的低温要求。本发明实施例降低了反射型LCD制备工艺的难度,且无需对现有制备工艺进行较大改动。
在本发明实施例的描述中,需要理解的是,术语“中部”、“上”、“下”、“前”、“后”、“竖直”、“水平”、“顶”、“底”“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。
在本发明实施例的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明中的具体含义。
虽然本发明所揭露的实施方式如上,但所述的内容仅为便于理解本发明而采用的实施方式,并非用以限定本发明。任何本发明所属领域内的技术人员,在不脱离本发明所揭露的精神和范围的前提下,可以在实施的形式及细节上进行任何的修改与变化,但本发明的专利保护范围,仍须以所附的权利要求书所界定的范围为准。
Claims (10)
1.一种反射型阵列基板,包括衬底基板,设置在衬底基板正面的阵列结构层,以及光反射层,其特征在于,所述光反射层设置在衬底基板背离所述阵列结构层的背面。
2.根据权利要求1所述的反射型阵列基板,其特征在于,所述光反射层包括设置在衬底基板背面的用于形成光反射结构的构形层、设置在所述构形层上的反射层、以及设置在反射层上的保护层。
3.根据权利要求2所述的反射型阵列基板,其特征在于,所述反射层包括规则排布的多个反射结构,每个反射结构为凸面体。
4.根据权利要求3所述的反射型阵列基板,其特征在于,所述凸面体包括三角形体、梯形体和/或弧形体。
5.根据权利要求4所述的反射型阵列基板,其特征在于,所述三角形体、梯形体或弧形体的侧面与衬底基板平面之间的夹角为5度~30度。
6.根据权利要求2所述的反射型阵列基板,其特征在于,所述构形层的厚度为5~10μm,所述反射层的厚度为100~1000nm,所述保护层的厚度为5~10μm。
7.一种显示装置,其特征在于,包括对盒的阵列基板和彩膜基板,所述阵列基板采用如权利要求1~6任一所述的反射型阵列基板。
8.一种反射型阵列基板的制备方法,其特征在于,包括:
衬底基板的正面制备阵列结构层;
在衬底基板背离阵列结构层的背面制备光反射层。
9.根据权利要求8所述的制备方法,其特征在于,所述在衬底基板背离阵列结构层的背面制备光反射层包括:
在衬底基板背离阵列结构层的背面制备构形层;
在构形层上制备反射层;
在反射层上制备保护层。
10.根据权利要求9所述的制备方法,其特征在于,所述反射层包括规则排布的多个反射结构,每个反射结构包括三角形体、梯形体和/或弧形体,所述三角形体、梯形体或弧形体的侧面与衬底基板平面之间的夹角为5度~30度;所述构形层的厚度为5~10μm,所述反射层的厚度为100~1000nm,所述保护层的厚度为5~10μm。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710113747.1A CN106898615B (zh) | 2017-02-28 | 2017-02-28 | 反射型阵列基板及其制备方法、显示装置 |
US15/788,940 US20180246374A1 (en) | 2017-02-28 | 2017-10-20 | Reflective array substrate, manufacturing method thereof, and display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710113747.1A CN106898615B (zh) | 2017-02-28 | 2017-02-28 | 反射型阵列基板及其制备方法、显示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106898615A true CN106898615A (zh) | 2017-06-27 |
CN106898615B CN106898615B (zh) | 2020-06-30 |
Family
ID=59185578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710113747.1A Expired - Fee Related CN106898615B (zh) | 2017-02-28 | 2017-02-28 | 反射型阵列基板及其制备方法、显示装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US20180246374A1 (zh) |
CN (1) | CN106898615B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109656055A (zh) * | 2019-02-28 | 2019-04-19 | 合肥京东方光电科技有限公司 | 阵列基板及制作方法、显示面板、显示装置、显示系统 |
CN113031355A (zh) * | 2021-02-26 | 2021-06-25 | 京东方科技集团股份有限公司 | 反射型阵列基板及其制备方法、显示装置 |
CN115032830A (zh) * | 2022-06-17 | 2022-09-09 | Tcl华星光电技术有限公司 | 显示面板和显示面板的制备方法 |
CN115718387A (zh) * | 2022-11-28 | 2023-02-28 | 京东方科技集团股份有限公司 | 反射型阵列基板及其制作方法、显示装置及其制作方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109917575A (zh) * | 2017-12-12 | 2019-06-21 | 中华映管股份有限公司 | 可挠式液晶显示器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1637517A (zh) * | 2003-12-29 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | 透射反射型液晶显示器件及其制造方法 |
CN101398557A (zh) * | 2007-09-27 | 2009-04-01 | 北京京东方光电科技有限公司 | 反透过型阵列基板 |
US20150241622A1 (en) * | 2014-02-27 | 2015-08-27 | Samsung Display Co., Ltd. | Complex substrate for display apparatus, display apparatus having the same and method of manufacturing the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004133250A (ja) * | 2002-10-11 | 2004-04-30 | Alps Electric Co Ltd | 反射体及び液晶表示装置 |
JP4046743B2 (ja) * | 2005-07-26 | 2008-02-13 | シャープ株式会社 | 反射型表示装置およびその製造方法 |
-
2017
- 2017-02-28 CN CN201710113747.1A patent/CN106898615B/zh not_active Expired - Fee Related
- 2017-10-20 US US15/788,940 patent/US20180246374A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1637517A (zh) * | 2003-12-29 | 2005-07-13 | Lg.菲利浦Lcd株式会社 | 透射反射型液晶显示器件及其制造方法 |
CN101398557A (zh) * | 2007-09-27 | 2009-04-01 | 北京京东方光电科技有限公司 | 反透过型阵列基板 |
US20150241622A1 (en) * | 2014-02-27 | 2015-08-27 | Samsung Display Co., Ltd. | Complex substrate for display apparatus, display apparatus having the same and method of manufacturing the same |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109656055A (zh) * | 2019-02-28 | 2019-04-19 | 合肥京东方光电科技有限公司 | 阵列基板及制作方法、显示面板、显示装置、显示系统 |
CN113031355A (zh) * | 2021-02-26 | 2021-06-25 | 京东方科技集团股份有限公司 | 反射型阵列基板及其制备方法、显示装置 |
CN115032830A (zh) * | 2022-06-17 | 2022-09-09 | Tcl华星光电技术有限公司 | 显示面板和显示面板的制备方法 |
CN115032830B (zh) * | 2022-06-17 | 2024-02-27 | Tcl华星光电技术有限公司 | 显示面板和显示面板的制备方法 |
US11921370B2 (en) | 2022-06-17 | 2024-03-05 | Tcl China Star Optoelectronics Technology Co., Ltd. | Display panel and preparation method thereof |
CN115718387A (zh) * | 2022-11-28 | 2023-02-28 | 京东方科技集团股份有限公司 | 反射型阵列基板及其制作方法、显示装置及其制作方法 |
CN115718387B (zh) * | 2022-11-28 | 2023-11-07 | 京东方科技集团股份有限公司 | 反射型阵列基板及其制作方法、显示装置及其制作方法 |
Also Published As
Publication number | Publication date |
---|---|
US20180246374A1 (en) | 2018-08-30 |
CN106898615B (zh) | 2020-06-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN106898615A (zh) | 反射型阵列基板及其制备方法、显示装置 | |
US8405810B2 (en) | Liquid crystal display and fabricating method thereof | |
CN104330915B (zh) | 一种阵列基板、液晶显示面板及显示装置 | |
CN101663612B (zh) | 液晶显示装置 | |
CN103151359B (zh) | 一种显示装置、阵列基板及其制作方法 | |
JP4772653B2 (ja) | Tftアレイ基板及びその製造方法 | |
TW200811556A (en) | Liquid crystal display and method for manufacturing the same | |
CN106024706B (zh) | 阵列基板及其制作方法 | |
US9806110B2 (en) | Pixel structure, LCD panel, and manufacturing method thereof | |
CN101600987A (zh) | 液晶显示装置 | |
CN105093750A (zh) | Tft阵列基板结构及其制作方法 | |
CN104570525B (zh) | 液晶显示装置及其制造方法 | |
CN104078470A (zh) | 阵列基板及其制作方法、显示装置 | |
CN102723308B (zh) | 一种阵列基板及其制作方法和显示装置 | |
CN105097837B (zh) | 阵列基板及其制作方法、显示装置 | |
CN104965324B (zh) | 液晶显示装置的制造方法 | |
CN101661908A (zh) | 水平电场型半透过式液晶显示装置的阵列基板制造方法 | |
CN104538412A (zh) | 阵列基板及其制作方法、显示装置 | |
CN107703687A (zh) | 阵列基板的制造方法、阵列基板及反射式液晶显示器 | |
CN104617039A (zh) | 阵列基板及其制作方法、显示装置 | |
KR101037089B1 (ko) | 액정표시장치 및 그 제조 방법 | |
CN107608113A (zh) | 一种显示面板、其制作方法及显示装置 | |
TWI299574B (en) | Method for fabricating transflective liquid crystal display | |
KR101627518B1 (ko) | 횡전계 방식 액정표시장치 및 그 제조 방법 | |
CN111613576A (zh) | 一种阵列基板及其制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200630 |