CN106896307A - 一种碳化硅mosfet导通电阻特性的建模方法 - Google Patents
一种碳化硅mosfet导通电阻特性的建模方法 Download PDFInfo
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- CN106896307A CN106896307A CN201710035453.1A CN201710035453A CN106896307A CN 106896307 A CN106896307 A CN 106896307A CN 201710035453 A CN201710035453 A CN 201710035453A CN 106896307 A CN106896307 A CN 106896307A
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 96
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
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Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108718150A (zh) * | 2018-05-28 | 2018-10-30 | 南京南大光电工程研究院有限公司 | 基于AlGaN/GaN HEMT器件的高频高压动态导通阻抗提取电路及提取方法 |
CN108732480A (zh) * | 2018-05-24 | 2018-11-02 | 江苏矽导集成科技有限公司 | 基于SiCMOSFET器件并联使用的自动化分拣电路及自动化分拣方法 |
CN108846171A (zh) * | 2018-05-28 | 2018-11-20 | 北京智芯微电子科技有限公司 | 仿真mosfet温度电学特性的子电路模型的建立方法 |
CN110579698A (zh) * | 2019-09-10 | 2019-12-17 | 江南大学 | 一种InAlN/GaN HEMT的结温测试方法 |
CN110673010A (zh) * | 2019-10-29 | 2020-01-10 | 全球能源互联网研究院有限公司 | 一种测算功率半导体器件的栅极内阻的方法及装置 |
CN112014707A (zh) * | 2020-07-13 | 2020-12-01 | 北京工业大学 | 一种功率循环实验中测量与控制SiC功率VDMOS器件结温的方法 |
CN112946449A (zh) * | 2021-01-28 | 2021-06-11 | 臻驱科技(上海)有限公司 | 一种功率半导体器件选型方法 |
CN113030683A (zh) * | 2021-03-15 | 2021-06-25 | 五羊—本田摩托(广州)有限公司 | 一种测量功率开关器件温度的方法、介质及计算机设备 |
WO2022241960A1 (zh) * | 2021-05-20 | 2022-11-24 | 长鑫存储技术有限公司 | 接触电阻的测试方法及设备 |
US11703531B2 (en) | 2021-05-20 | 2023-07-18 | Changxin Memory Technologies, Inc. | Contact resistor test method and device |
CN116861833A (zh) * | 2023-08-30 | 2023-10-10 | 湖南大学 | SiC MOSFET物理模型构建方法、设备及存储介质 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61155775A (ja) * | 1984-12-27 | 1986-07-15 | Fuji Electric Co Ltd | Mos形fetの熱抵抗測定方法 |
JPH118282A (ja) * | 1997-06-16 | 1999-01-12 | Nec Corp | Mosfetデバイスのゲート長測定方法および測定装置 |
CN204649917U (zh) * | 2015-04-02 | 2015-09-16 | 北京华峰测控技术有限公司 | 一种mosfet晶圆导通电阻的测量装置 |
CN106124829A (zh) * | 2016-06-29 | 2016-11-16 | 成都海威华芯科技有限公司 | 场效应晶体管寄生电阻和沟道参数的提取方法 |
-
2017
- 2017-01-18 CN CN201710035453.1A patent/CN106896307B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61155775A (ja) * | 1984-12-27 | 1986-07-15 | Fuji Electric Co Ltd | Mos形fetの熱抵抗測定方法 |
JPH118282A (ja) * | 1997-06-16 | 1999-01-12 | Nec Corp | Mosfetデバイスのゲート長測定方法および測定装置 |
CN204649917U (zh) * | 2015-04-02 | 2015-09-16 | 北京华峰测控技术有限公司 | 一种mosfet晶圆导通电阻的测量装置 |
CN106124829A (zh) * | 2016-06-29 | 2016-11-16 | 成都海威华芯科技有限公司 | 场效应晶体管寄生电阻和沟道参数的提取方法 |
Non-Patent Citations (4)
Title |
---|
孙凯 等: "碳化硅MOSFET的变温度参数建模", 《中国电机工程学报》 * |
韩新峰 等: "集成电路中MOS管导通电阻测量方法", 《电子与封装》 * |
顾汉玉 等: "一种精确测量MOSFET晶圆导通电阻的方法", 《电子与封装》 * |
马青 等: "SiC MOSFET静态性能及参数温度依赖性的实验分析及与Si IGBT的对比", 《电源学报》 * |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108732480B (zh) * | 2018-05-24 | 2020-07-10 | 江苏矽导集成科技有限公司 | 基于SiC MOSFET器件并联使用的自动化分拣电路及自动化分拣方法 |
CN108732480A (zh) * | 2018-05-24 | 2018-11-02 | 江苏矽导集成科技有限公司 | 基于SiCMOSFET器件并联使用的自动化分拣电路及自动化分拣方法 |
WO2019228543A1 (zh) * | 2018-05-28 | 2019-12-05 | 北京智芯微电子科技有限公司 | 仿真mosfet温度电学特性的子电路模型的建立方法 |
CN108718150A (zh) * | 2018-05-28 | 2018-10-30 | 南京南大光电工程研究院有限公司 | 基于AlGaN/GaN HEMT器件的高频高压动态导通阻抗提取电路及提取方法 |
CN108846171A (zh) * | 2018-05-28 | 2018-11-20 | 北京智芯微电子科技有限公司 | 仿真mosfet温度电学特性的子电路模型的建立方法 |
CN110579698A (zh) * | 2019-09-10 | 2019-12-17 | 江南大学 | 一种InAlN/GaN HEMT的结温测试方法 |
CN110673010A (zh) * | 2019-10-29 | 2020-01-10 | 全球能源互联网研究院有限公司 | 一种测算功率半导体器件的栅极内阻的方法及装置 |
CN110673010B (zh) * | 2019-10-29 | 2022-01-21 | 全球能源互联网研究院有限公司 | 一种测算功率半导体器件的栅极内阻的方法及装置 |
CN112014707A (zh) * | 2020-07-13 | 2020-12-01 | 北京工业大学 | 一种功率循环实验中测量与控制SiC功率VDMOS器件结温的方法 |
CN112946449A (zh) * | 2021-01-28 | 2021-06-11 | 臻驱科技(上海)有限公司 | 一种功率半导体器件选型方法 |
CN113030683A (zh) * | 2021-03-15 | 2021-06-25 | 五羊—本田摩托(广州)有限公司 | 一种测量功率开关器件温度的方法、介质及计算机设备 |
WO2022241960A1 (zh) * | 2021-05-20 | 2022-11-24 | 长鑫存储技术有限公司 | 接触电阻的测试方法及设备 |
US11703531B2 (en) | 2021-05-20 | 2023-07-18 | Changxin Memory Technologies, Inc. | Contact resistor test method and device |
CN116861833A (zh) * | 2023-08-30 | 2023-10-10 | 湖南大学 | SiC MOSFET物理模型构建方法、设备及存储介质 |
CN116861833B (zh) * | 2023-08-30 | 2024-01-30 | 湖南大学 | SiC MOSFET物理模型构建方法、设备及存储介质 |
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Effective date of registration: 20230505 Address after: 312000 No. 518, Linjiang Road, Gaobu street, Yuecheng District, Shaoxing City, Zhejiang Province Patentee after: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. Address before: 310058 Yuhang Tang Road, Xihu District, Hangzhou, Zhejiang 866 Patentee before: ZHEJIANG University |
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Effective date of registration: 20231219 Address after: Room 203-18, Building 1, No. 1433 Renmin East Road, Gaobu Street, Yuecheng District, Shaoxing City, Zhejiang Province, 312035 Patentee after: Xinlian Power Technology (Shaoxing) Co.,Ltd. Address before: 312000 No. 518, Linjiang Road, Gaobu street, Yuecheng District, Shaoxing City, Zhejiang Province Patentee before: Shaoxing SMIC integrated circuit manufacturing Co.,Ltd. |
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