CN106876496A - P型perc双面太阳能电池及其组件、系统和制备方法 - Google Patents
P型perc双面太阳能电池及其组件、系统和制备方法 Download PDFInfo
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- CN106876496A CN106876496A CN201710122960.9A CN201710122960A CN106876496A CN 106876496 A CN106876496 A CN 106876496A CN 201710122960 A CN201710122960 A CN 201710122960A CN 106876496 A CN106876496 A CN 106876496A
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- alum gate
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- silicon chip
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 69
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 69
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 69
- 238000002360 preparation method Methods 0.000 title claims description 10
- 229940037003 alum Drugs 0.000 claims abstract description 150
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 138
- 239000010703 silicon Substances 0.000 claims abstract description 138
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 48
- 239000004332 silver Substances 0.000 claims abstract description 48
- 229910052709 silver Inorganic materials 0.000 claims abstract description 48
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000002161 passivation Methods 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 136
- 229910052782 aluminium Inorganic materials 0.000 claims description 50
- 239000004411 aluminium Substances 0.000 claims description 45
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 44
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 12
- 238000000137 annealing Methods 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 7
- 239000011267 electrode slurry Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 230000009466 transformation Effects 0.000 abstract description 25
- 210000004027 cell Anatomy 0.000 description 23
- 238000000034 method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000010521 absorption reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 239000005038 ethylene vinyl acetate Substances 0.000 description 4
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- 210000005056 cell body Anatomy 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000005336 safety glass Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
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- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/047—PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (10)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710122960.9A CN106876496B (zh) | 2017-03-03 | 2017-03-03 | P型perc双面太阳能电池及其组件、系统和制备方法 |
JP2019548014A JP7023976B2 (ja) | 2017-03-03 | 2018-02-28 | P型perc両面太陽電池の製造方法 |
PCT/CN2018/077593 WO2018157826A1 (zh) | 2017-03-03 | 2018-02-28 | P型perc双面太阳能电池及其组件、系统和制备方法 |
EP18761456.5A EP3591715B1 (en) | 2017-03-03 | 2018-02-28 | Method of preparing a bifacial p-type perc solar cell |
KR1020197029116A KR102323458B1 (ko) | 2017-03-03 | 2018-02-28 | P형 perc 양면 태양 전지 및 그 모듈, 시스템과 제조 방법 |
US16/489,663 US10763377B2 (en) | 2017-03-03 | 2018-02-28 | Bifacial P-type PERC solar cell and module, system, and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710122960.9A CN106876496B (zh) | 2017-03-03 | 2017-03-03 | P型perc双面太阳能电池及其组件、系统和制备方法 |
Publications (2)
Publication Number | Publication Date |
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CN106876496A true CN106876496A (zh) | 2017-06-20 |
CN106876496B CN106876496B (zh) | 2019-07-05 |
Family
ID=59169881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710122960.9A Active CN106876496B (zh) | 2017-03-03 | 2017-03-03 | P型perc双面太阳能电池及其组件、系统和制备方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10763377B2 (zh) |
EP (1) | EP3591715B1 (zh) |
JP (1) | JP7023976B2 (zh) |
KR (1) | KR102323458B1 (zh) |
CN (1) | CN106876496B (zh) |
WO (1) | WO2018157826A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018157826A1 (zh) * | 2017-03-03 | 2018-09-07 | 广东爱旭科技股份有限公司 | P型perc双面太阳能电池及其组件、系统和制备方法 |
CN109968799A (zh) * | 2019-04-29 | 2019-07-05 | 苏州腾晖光伏技术有限公司 | 用于晶硅电池背电极的网版及晶硅电池背电极制备方法 |
CN112736147A (zh) * | 2019-10-15 | 2021-04-30 | 浙江爱旭太阳能科技有限公司 | 太阳能电池及其生产方法 |
WO2023077787A1 (zh) * | 2021-11-05 | 2023-05-11 | 通威太阳能(成都)有限公司 | 一种perc电池的se激光掺杂图形和perc电池制备方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114242810B (zh) * | 2022-02-24 | 2022-04-29 | 广东爱旭科技有限公司 | 背接触电池的电极结构、电池、组件以及电池系统 |
CN115117185A (zh) * | 2022-06-30 | 2022-09-27 | 环晟光伏(江苏)有限公司 | 一种叠瓦电池片的加工方法 |
Citations (9)
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CN202633327U (zh) * | 2012-07-05 | 2012-12-26 | 宁波尤利卡太阳能科技发展有限公司 | 晶体硅太阳电池正面栅线电极 |
JP2013211341A (ja) * | 2012-03-30 | 2013-10-10 | Sharp Corp | 太陽電池セルおよび太陽電池モジュール |
CN203277404U (zh) * | 2013-05-21 | 2013-11-06 | 江苏爱多光伏科技有限公司 | 一种设有六边形边框的太阳能电池片 |
CN203491270U (zh) * | 2013-08-31 | 2014-03-19 | 山东力诺太阳能电力股份有限公司 | 一种晶体硅太阳电池背面电极结构 |
CN104576773A (zh) * | 2013-10-15 | 2015-04-29 | 太阳世界工业美国有限公司 | 太阳能电池接触结构 |
CN105304731A (zh) * | 2014-07-24 | 2016-02-03 | 茂迪股份有限公司 | 太阳能电池及其模组 |
CN106098839A (zh) * | 2016-06-15 | 2016-11-09 | 浙江正泰太阳能科技有限公司 | 一种高效晶硅perc电池的制备方法 |
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CN206628482U (zh) * | 2017-03-03 | 2017-11-10 | 广东爱康太阳能科技有限公司 | P型perc双面太阳能电池及其组件、系统 |
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JP5495777B2 (ja) * | 2009-12-25 | 2014-05-21 | 京セラ株式会社 | 太陽電池モジュール |
DE102011000753A1 (de) * | 2011-02-15 | 2012-08-16 | Solarworld Innovations Gmbh | Solarzelle, Solarmodul und Verfahren zum Herstellen einer Solarzelle |
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JP7023976B2 (ja) | 2022-02-22 |
KR20200005537A (ko) | 2020-01-15 |
CN106876496B (zh) | 2019-07-05 |
WO2018157826A1 (zh) | 2018-09-07 |
KR102323458B1 (ko) | 2021-11-08 |
US10763377B2 (en) | 2020-09-01 |
JP2020509602A (ja) | 2020-03-26 |
EP3591715B1 (en) | 2023-01-18 |
US20200013909A1 (en) | 2020-01-09 |
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