CN106816392A - Focal plane detector indium column plasma backflow pelletizing method - Google Patents
Focal plane detector indium column plasma backflow pelletizing method Download PDFInfo
- Publication number
- CN106816392A CN106816392A CN201611115793.7A CN201611115793A CN106816392A CN 106816392 A CN106816392 A CN 106816392A CN 201611115793 A CN201611115793 A CN 201611115793A CN 106816392 A CN106816392 A CN 106816392A
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- Prior art keywords
- indium
- backflow
- plasma
- focal plane
- plane detector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
- H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
- H01L2224/81815—Reflow soldering
Abstract
The invention discloses a kind of focal plane detector indium column plasma backflow pelletizing method, the method for the balling-up that flowed back to indium post using the plasma of argon gas and hydrogen.In indium post reflux course, the reflow treatment to indium post is completed using inductive couple plasma, reactive ion etching or other plasma apparatus.Argon plasma is mainly used in cleaning sample and smashes the oxide layer on indium post surface；Hydrogen gas plasma is mainly used in reducing indium post oxide on surface.The method does not need flux, convenient and reliable, and focal plane detector is without any negative effect, and, backflow uniformity, reproducible advantage easily controllable with reflux technique.
Description
Technical field
The present invention relates to focal plane detector indium column plasma backflow pelletizing method, specifically refer to detector chip and read
A kind of method of the indium post backflow balling-up of circuit flip chip bonding interconnection.
Background technology
Focus planardetector is the core component of modern imaging system, typically using hybrid integrated.The advantage of hybrid integrated
Can be that photosensor chip and reading circuit are optimized respectively, then be interconnected.Compared with traditional wire is connected, upside-down mounting
Interconnection structure can realize I/O interface densitys and performance higher, and all be improved a lot in heat-sinking capability and reliability.
The interconnection of focus planardetector does not require nothing more than detector array chip detection pixel and corresponding reading circuit input
Offer is mechanically and electrically connected, but also can buffer detector chip and reading circuit thermal expansion mismatch at low temperature.By
Excellent extension characteristics can be kept in low temperature in indium, can make that focus planardetector and reading circuit produce by thermal expansion should
Power is minimized, therefore generally using the welding of indium post flip-chip interconnection in the development of focal plane device.By the battle array of focal plane device
Row chip and readout circuit chip are prepared respectively, then prepare corresponding indium electricity in array chip and reading circuit surface
Pole, then lithography stripping indium electrode prepares indium post.Array chip is aligned one by one with reading circuit cylinder opposite during interconnection, pressure welding
Together.Therefore high-quality indium film growing technology, indium column preparation technology, the indium post backflow technique such as balling-up technology is whole burnt flat
The key that surface detector makes, will directly influence the photoelectric properties and image quality of focal plane device.
The backflow of indium post is to show the heating of indium post to melt it, indium post is shunk balling-up with surface tension by invading profit and acting on.
The surface of indium pellet is more smooth after backflow, and uniformity is more preferable；Height also gets a promotion, and can so reduce welding pressure, reduces welding
Lateral shear pulling force afterwards, improves the reliability of device.But indium is oxidizable, indium post prepare after the completion of once with air contact pole
Easily form In2O3, the oxide ester mp is high, than great, poor ductility, indium post table will be wrapped in solid forms in reflux course
Face, suppresses the balling-up of indium post and sweat soldering.In indium post reflux course, at present generally using flux ZnCl2Or formic acid comes
Remove the oxide on surface.But, flux introduces new ion while oxide is eliminated, and causes new pollution,
So as to influence the storage life of focus planardetector；Formic acid with certain toxicity needs strictly to be controlled in amount when in use
System, excessive formic acid residual will influence welding quality.
The content of the invention
(1) goal of the invention
The purpose of the present invention is：A kind of problem based on indium post of the prior art backflow pelletizing method, there is provided focal plane
Detector indium post plasma backflow pelletizing method, the backflow balling-up of indium post is realized using the plasma of argon gas and hydrogen.
(2) technical scheme
In order to solve the above-mentioned technical problem, the present invention provides a kind of focal plane detector indium column plasma backflow balling-up side
Method, it is comprised the following steps：
S1：Reading circuit prepares underlying metal；
S2：By resistance heating evaporation indium film, stripping prepares indium post；
S3：The reading circuit that indium post will be prepared is put into plasma etching equipment the balling-up that flows back.
Wherein, in the step S1, readout circuit chip is cleaned with organic solvent, carries out photoetching after cleaning up, then
Deposition underlying metal structure.
Wherein, the underlying metal structure is Ti/Pt/Au/Cr.
Wherein, in the step S2, the photoetching on the readout circuit chip for have underlying metal, using the side of resistance thermal evaporation
Method deposits indium film, and the indium post to form required thickness is peeled off using ultrasonic wave added.
Wherein, indium film thickness is deposited for 3~5um.
Wherein, peel off after forming indium post, gluing protection simultaneously scribing.
Wherein, in the step S3, will prepare indium post readout circuit chip clean up after be put into plasma quarter
In erosion equipment, plasma etching equipment is inductively coupled plasma etching equipment or reactive ion etching equipment.
Wherein, the readout circuit chip is put into plasma etching equipment to rear, in the state of high vacuum, is passed through Ar
And H2, radio-frequency power, pressure, temperature, gas flow etching parameters are adjusted to obtain uniform reliable indium pellet.
Wherein, it is passed through Ar：6sccm；H2：25sccm；The etching parameters of plasma etching equipment are：Radio-frequency power is
300W, pressure 3Pa, 180 DEG C of temperature, time 240S.
Wherein, also including step：
S4：The readout circuit chip that taking-up is ready for backflow balling-up carries out face-down bonding
Indium post is taken out to have flowed back the readout circuit chip of balling-up, the height and diameter of hot-wire array indium pellet, height and diameter
Uniformity, meet face-down bonding requirement carries out face-down bonding.
(3) beneficial effect
The focal plane detector indium column plasma backflow pelletizing method that above-mentioned technical proposal is provided, using argon gas and hydrogen
Plasma deoxidization indium post balling-up, it is not necessary to flux, it is to avoid flux introduces new ion and pollutes；The method side
Just reliable, focal plane detector is without any negative effect, and reflux technique is easily controllable, backflow uniformity, reproducible.
Brief description of the drawings
Fig. 1 is the indium post not flowed back.
Fig. 2 is the indium post after backflow.
Specific embodiment
To make the purpose of the present invention, content and advantage clearer, with reference to the accompanying drawings and examples, to tool of the invention
Body implementation method is described in further detail.
Focal plane detector indium column plasma backflow pelletizing method of the invention specifically includes following steps：
S1：Reading circuit prepares underlying metal
Clean readout circuit chip with organic solvent, carry out photoetching after cleaning up, it is to be deposited go out underlying metal film Ti/
After Pt/Au/Cr underlying metal Ti/Pt/Au/Cr is prepared by way of peeling off.
The surface of Au increases by one layer of Cr can effectively prevent Au and In from forming alloy.
S2：By resistance heating evaporation indium film, stripping mode prepares indium post
Continue the photoetching on the readout circuit chip for have underlying metal, 3~5um indiums are deposited using the method for resistance thermal evaporation
Film, the indium post to form required thickness is peeled off using ultrasonic wave added, and last gluing protection is stand-by after scribing.
S3：The reading circuit that indium post will be prepared is put into plasma etching equipment the balling-up that flows back
To prepare indium post readout circuit chip clean up after be put into plasma etching equipment, in high vacuum
Under state, Ar and H is passed through2, the etching parameters such as radio-frequency power, pressure, temperature, gas flow are adjusted to obtain uniform reliable indium
Ball
It is passed through Ar：6sccm；H2：25sccm.
The etching parameters of plasma etching equipment are：Radio-frequency power is 300W, pressure 3Pa, 180 DEG C of temperature, time 240S.
Plasma etching equipment is inductively coupled plasma etching equipment or reactive ion etching equipment.
S4：The readout circuit chip that taking-up is ready for backflow balling-up carries out face-down bonding
Indium post is taken out to have flowed back the readout circuit chip of balling-up, the height and diameter of hot-wire array indium pellet, height and diameter
Uniform sexual satisfaction face-down bonding requirement carried out face-down bonding.
Fig. 1 is the indium post photo not flowed back, and Fig. 2 is the indium pellet photo after backflow, the photo display indium post backflow after backflow
Effect is good, and backflow is uniform, and it is preferable that 64 × 64 focus planardetectors carry out face-down bonding imaging effect with the method backflow balling-up.
The above is only the preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
For member, on the premise of the technology of the present invention principle is not departed from, some improvement and deformation can also be made, these improve and deform
Also should be regarded as protection scope of the present invention.
Claims (10)
1. a kind of focal plane detector indium column plasma backflow pelletizing method, it is characterised in that comprise the following steps：
S1：Reading circuit prepares underlying metal；
S2：By resistance heating evaporation indium film, stripping prepares indium post；
S3：The reading circuit that indium post will be prepared is put into plasma etching equipment the balling-up that flows back.
2. focal plane detector indium column plasma as claimed in claim 1 backflow pelletizing method, it is characterised in that the step
In S1, readout circuit chip is cleaned with organic solvent, photoetching is carried out after cleaning up, then deposit underlying metal structure.
3. focal plane detector indium column plasma as claimed in claim 2 backflow pelletizing method, it is characterised in that the bottom
Metal structure is Ti/Pt/Au/Cr.
4. focal plane detector indium column plasma as claimed in claim 3 backflow pelletizing method, it is characterised in that the step
In S2, the photoetching on the readout circuit chip for have underlying metal deposits indium film using the method for resistance thermal evaporation, auxiliary using ultrasound
Help the indium post peeled off and form required thickness.
5. focal plane detector indium column plasma as claimed in claim 4 backflow pelletizing method, it is characterised in that deposit indium
Film thickness is 3~5um.
6. focal plane detector indium column plasma as claimed in claim 4 backflow pelletizing method, it is characterised in that peel off and formed
After indium post, gluing protection simultaneously scribing.
7. focal plane detector indium column plasma as claimed in claim 4 backflow pelletizing method, it is characterised in that the step
In S3, will prepare indium post readout circuit chip clean up after be put into plasma etching equipment, plasma etching sets
Standby is inductively coupled plasma etching equipment or reactive ion etching equipment.
8. focal plane detector indium column plasma as claimed in claim 7 backflow pelletizing method, it is characterised in that the reading
Circuit chip is put into plasma etching equipment to rear, in the state of high vacuum, is passed through Ar and H2, adjustment radio-frequency power, pressure
By force, temperature, gas flow etching parameters are obtaining uniform reliable indium pellet.
9. focal plane detector indium column plasma as claimed in claim 8 backflow pelletizing method, it is characterised in that be passed through Ar：
6sccm；H2：25sccm；The etching parameters of plasma etching equipment are：Radio-frequency power is 300W, pressure 3Pa, 180 DEG C of temperature,
Time 240S.
10. focal plane detector indium column plasma as claimed in any one of claims 1-9 wherein backflow pelletizing method, its feature exists
In also including step：
S4：The readout circuit chip that taking-up is ready for backflow balling-up carries out face-down bonding
Take out indium post to have flowed back the readout circuit chip of balling-up, the height and diameter of hot-wire array indium pellet are highly equal with diameter
Even property, meet face-down bonding requirement carries out face-down bonding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611115793.7A CN106816392A (en) | 2016-12-07 | 2016-12-07 | Focal plane detector indium column plasma backflow pelletizing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611115793.7A CN106816392A (en) | 2016-12-07 | 2016-12-07 | Focal plane detector indium column plasma backflow pelletizing method |
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| CN106816392A true CN106816392A (en) | 2017-06-09 |
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| CN201611115793.7A Pending CN106816392A (en) | 2016-12-07 | 2016-12-07 | Focal plane detector indium column plasma backflow pelletizing method |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110660690A (en) * | 2019-09-29 | 2020-01-07 | 中国电子科技集团公司第十一研究所 | Method for preparing indium salient point of infrared detector reading circuit |
| CN111584672A (en) * | 2020-04-23 | 2020-08-25 | 华中光电技术研究所（中国船舶重工集团公司第七一七研究所） | Indium column of infrared focal plane detector and preparation method thereof |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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