CN106785920A - A kind of semiconductor laser stacks of mechanical connection type - Google Patents
A kind of semiconductor laser stacks of mechanical connection type Download PDFInfo
- Publication number
- CN106785920A CN106785920A CN201611240954.5A CN201611240954A CN106785920A CN 106785920 A CN106785920 A CN 106785920A CN 201611240954 A CN201611240954 A CN 201611240954A CN 106785920 A CN106785920 A CN 106785920A
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- China
- Prior art keywords
- semiconductor laser
- lug boss
- heat sink
- conductive substrates
- laser element
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 132
- 239000000758 substrate Substances 0.000 claims description 75
- 238000009413 insulation Methods 0.000 claims description 41
- 239000004020 conductor Substances 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 6
- 238000009434 installation Methods 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 3
- 238000003491 array Methods 0.000 claims description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000004888 barrier function Effects 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 238000005457 optimization Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000002305 electric material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
Abstract
The invention provides a kind of semiconductor laser stacks of mechanical connection type, it is made up of multiple semiconductor laser elements, the semiconductor laser element is provided with lug boss and concave part, and lug boss is mutually matched with concave part so that the lug boss and concave part of adjacent semiconductor laser element connect to form folded battle array structure with inserting mode.Semiconductor laser element of the invention is assembled using the inserting mode of interference fit, can not only realize the lossless dismounting of semiconductor laser element, and can realize less volume, beneficial to product radiating.
Description
Technical field
The present invention relates to a kind of semiconductor laser, specially the encapsulation knot of the semiconductor laser stacks of mechanical connection type
Structure.
Background technology
Fig. 1 is a kind of encapsulating structure of the folded battle array of existing high-power semiconductor laser：Multiple laser chips 1 and multiple dissipate
Be bonded in the module again after a bar bar group, to be integrally bonded on insulation system 4, then heat sink by the bonding of thermal conducting substrate 2
On；Or laser chip is bonded to conductive substrates and forms a luminescence unit, multiple luminescence units are bonded to insulation lining successively again
Bottom and it is heat sink on.
In the semiconductor laser stacks structure of above-mentioned encapsulating structure, laser chip, conductive substrates, dielectric substrate with it is heat sink
Between using the technique that is mutually bonded, a chip burns out, and entirely folded battle array can fail；And the semiconductor laser of the structure
Device later maintenance is complicated, and the failure of one single chip is difficult to individually maintenance and changes in long-term use, and then influence is entirely partly led
The reliability of body laser.
The content of the invention
In order to solve the deficiencies in the prior art, the present invention proposes a kind of semiconductor laser stacks of mechanical connection type.
Technical scheme is as follows：
A kind of semiconductor laser stacks of mechanical connection type, including multiple semiconductor laser elements, it is characterised in that：It is described
Semiconductor laser element is provided with lug boss and concave part, and lug boss is mutually matched with concave part so that adjacent partly leads
The lug boss and concave part of body laser unit connect to form folded battle array structure with inserting mode.
The semiconductor laser element structure is divided into following two：
1）Semiconductor laser element includes conductive substrates and the laser chip being bonded with conductive substrates；The lug boss and groove
Portion is respectively arranged at two sides of conductive substrates, and lug boss is exhausted with the concave part splicing position of adjacent semiconductor laser element
Edge.
The lug boss outer wrap insulating sleeve.
2）The semiconductor laser element includes conductive substrates, the laser chip being bonded with conductive substrates and heat sink
Block；Conductive substrates are arranged at heat sink piece of upper and insulation between conductive substrates and heat sink piece；Foregoing lug boss and concave part set respectively
It is placed in heat sink piece of upper two sides corresponding to conductive substrates mounting surface so that what adjacent semiconductor laser element was heat sink piece
Lug boss and concave part are connected with inserting mode and form folded battle array structure.
The semiconductor laser element also includes positive strap, negative straps and buffer insulation block, for adjacent
Electrical connection between semiconductor laser element；The positive strap is bonded in conductive substrates, or positive strap with
Conductive substrates are structure as a whole, the negative straps be bonded on laser chip and with adjacent semiconductor laser element
Positive strap is connected；The buffer insulation block be arranged at negative straps and the semiconductor laser element conductive substrates it
Between, and thickness is more than the thickness of laser chip.
The lug boss is hollow structure, used as the folded battle array structured liquids refrigerating channel.
Described conductive substrates or heat sink piece are trapezoidal so that multiple semiconductor laser elements are successively being mutually inserted
Mode forms circular ring type or semicircular arrays after assembling, and the laser beam that the multiple semiconductor laser element sends has jointly
Zone of convergence.
The lug boss is pin, and the concave part is pin-and-hole；Or the concave part is dovetail groove, lug boss is and swallow
The structure of stern notch matching.
It is below another a kind of semiconductor laser stacks of mechanical connection type of the invention, including pacifies in grafting form
Multiple semiconductor laser elements in putting into heat sink piece, wherein, semiconductor laser element includes conductive substrates and is bonded to
Laser chip in conductive substrates；The semiconductor laser element bottom is provided with lug boss, is provided with described heat sink piece
The concave part matched with foregoing lug boss so that multiple semiconductor laser element grafting are attached to heat sink piece and form folded battle array, institute
State and insulated between conductive substrates and heat sink piece.
Described heat sink piece is insulating materials, and foregoing lug boss is arranged at conductive substrates bottom；Or described heat sink piece is to lead
Electric material, semiconductor laser element also includes being arranged at the insulation system of conductive substrates bottom, and insulation system bottom is provided with
Lug boss or insulation system itself are used as lug boss.
The multiple semiconductor laser element is closely connected, and its lug boss constitutes an entirety, and described heat sink piece only sets
A concave part is equipped with, foregoing lug boss is arranged on heat sink piece as overall grafting；Or described heat sink piece be provided with and half
The equal concave part of conductor laser number of unit, the multiple semiconductor laser element is plugged to heat sink piece simultaneously closely one by one
Connection.
The semiconductor laser element also includes positive strap, negative straps and buffer insulation block, for adjacent
Electrical connection between semiconductor laser element；The positive strap is bonded in conductive substrates, or positive strap with
Conductive substrates are structure as a whole, the negative straps be bonded on laser chip and with adjacent semiconductor laser element
Positive strap is connected；The buffer insulation block be arranged at negative straps and the semiconductor laser element conductive substrates it
Between, and thickness is more than the thickness of laser chip.
Two sides that the conductive substrates correspond to heat sink piece of installation direction are respectively arranged with the second lug boss and second
Concave part, and the second lug boss is mutually matched with the second concave part so that multiple semiconductor laser element grafting are attached to heat
During sinker, it is tightly fastened in grafting form between adjacent semiconductor laser element, and the second lug boss is partly led with adjacent
The second concave part splicing position insulation of body laser unit.
The present invention has advantages below：
1）Semiconductor laser element can realize independent test, screening, aging, improve the qualification rate after assembling product；Phase
Adjacent semiconductor laser element is connected by this mechanical connection manner of grafting, in use and in later maintenance can be to list
Individual semiconductor laser element carries out dismounting replacement, and laser chip will not be caused to damage.
2）Inserting mode of the invention can be in the form of interference fit or dovetail groove, specifically can be using pin and pin-and-hole
Structure, is capable of achieving less volume, and space is small, beneficial to product radiating.
3）The present invention can be assembled into the semiconductor laser of random length, so as to realize luminous zone semiconductor laser long
Assembling, with flexibility higher.
Brief description of the drawings
Fig. 1 is existing packing forms.
Fig. 2 and Fig. 3 are respectively the semiconductor laser element and corresponding folded battle array structure of embodiments of the invention one.
Fig. 4 and Fig. 5 are respectively semiconductor laser element and corresponding folded battle array knot corresponding to embodiments of the invention two
Structure schematic diagram.
Fig. 6 disassembles view for the structure of the semiconductor laser element of embodiment two.
Fig. 7 is the structure chart of embodiment two.
Fig. 8 is embodiments of the invention three.
Fig. 9 is the semiconductor laser element corresponding to embodiments of the invention four.
Figure 10 is the structural representation of embodiments of the invention four.
Figure 11 and Figure 12 are respectively the alternative solution of embodiment five and embodiment five.
Figure 13 and Figure 14 are respectively the semiconductor laser element of the optimization structure of embodiment five and fold battle array structure accordingly.
Drawing reference numeral explanation：1- laser chips, 2- conductive substrates, 3- is heat sink piece, and 4- insulation systems, 5- lug bosses, 6- is recessed
Groove portion, 7- buffer insulation blocks, 8- negative straps, 9- positive straps, 10- water flowing blocks, 11- limbers, 12- insulating barriers, 13-
Insulating sleeve, the conductive layer of 201- conductive substrates, the dielectric base of 202- conductive substrates.
Specific embodiment
Fig. 2 and Fig. 3 are respectively embodiments of the invention one, and the semiconductor laser element corresponding to the embodiment.
Semiconductor laser element in Fig. 2 includes conductive substrates 2, the laser chip 1 being bonded with conductive substrates, and heat sink piece 3；Lead
Electric substrate 2 is arranged on heat sink piece 3 and is insulated between conductive substrates 2 and heat sink piece 3, and conductive material is selected when heat sink piece（Such as
Copper, copper tungsten etc.）When, insulation system 4 is provided between conductive substrates 2 and heat sink piece 3, specifically, conductive substrates 2 are copper tungsten etc.
Metal material, insulation system 4 is aluminium nitride ceramics or overlays on the insulation film of the bottom of conductive substrates 2,；When heat sink piece of selection is exhausted
Edge material（Such as ceramics）When, aforementioned dielectric structure 4 can be saved.
Above-mentioned heat sink piece 3 of two sides（Corresponding to the mounting surface for installing conductive substrates 2）It is respectively arranged with projection
Portion 5 and concave part 6, and lug boss is mutually matched with concave part so that the projection that adjacent semiconductor laser element is heat sink piece
Portion and concave part are connected with inserting mode and form folded battle array structure.
Above-mentioned heat sink piece of lug boss and concave part is specifically as follows pin and pin-and-hole, or dovetail groove and matching is convex
The portion of rising, it is mechanically coupled together with interference fit.
Fig. 5 and Fig. 4 are respectively embodiments of the invention two, and the semiconductor laser element corresponding to the embodiment,
Embodiment two realizes the optimization on electric connection structure and performance to embodiment one.Semiconductor laser element in Fig. 4 is also
Including positive strap 9, negative straps 8 and buffer insulation block 7, the positive strap 9 is bonded in conductive substrates 2；For
More simple structure is realized, positive strap 9 and conductive substrates 2 integrative-structure can be formed.The negative straps 8
It is bonded on laser chip 1 and is connected with the positive strap of adjacent semiconductor laser element.
The thickness of buffer insulation block 7 is arranged at negative straps 8 and the semiconductor laser more than the thickness of laser chip
Between the conductive substrates 2 of device unit, or be arranged at negative straps 8 and the semiconductor laser element insulation system 4 it
Between.Buffer insulation block 7 is installed after fixing, and it installs the edge that edge is beyond heat sink piece 3 so that adjacent semiconductor laser element
With inserting mode connect after buffer insulation block is applied with pressure and to buffer insulation block 7 produce elastic deformation, it is ensured that negative pole connect
Contact pin 8 is closely connected with the positive strap of adjacent semiconductor laser element.
In order to match the shape of buffer insulation block, negative straps 8 include flat region and bending region, flat region pair
Stress optical chip bond area, the installing zone of bending region correspondence buffer insulation block.
It should be noted that negative straps 8, positive strap 9 are insulated with heat sink piece 3, specific implementation shows as
Negative straps 8, positive strap 9 keep the safe spacing of insulation with heat sink piece 3, or on heat sink piece 3 of mounting surface
Dielectric film is covered, optimizes insulation effect.
Fig. 6 disassembles view for the structure of Fig. 4 semiconductor laser elements, and Fig. 7 is that the structure of embodiment two in Fig. 5 is disassembled
Figure, in order to improve the radiating efficiency of semiconductor laser stacks, can set liquid refrigerating passage, further in heat sink piece
, lug boss can be set to hollow structure, as liquid refrigerating passage.The both sides of semiconductor laser stacks set in Fig. 7
Water flowing block 10 is equipped with, water flowing block is provided with the limbers 11 with liquid refrigerating channel connection, for external liquid refrigerating equipment.
The semiconductor laser element for constituting folded battle array structure can also be this structure：Including conductive substrates 2 and with conduction
The laser chip 1 of substrate bonding, the lug boss 5 and concave part 6 are respectively arranged at two sides of conductive substrates.Specifically include
Following two optional embodiments：1）As shown in figure 8, conductive substrates include dielectric base 202, and it is arranged at dielectric base 202
The conductive layer 201 on surface, the lug boss 5 and concave part 6 are respectively arranged at two sides of the dielectric base of conductive substrates, make
Lug boss is obtained to be insulated with the concave part splicing position of adjacent semiconductor laser element；Laser chip is bonded on conductive layer 201, and
Conductive layer with adjacent semiconductor laser is connected.2）Conductive substrates are conductive material, specially copper tungsten etc., lug boss and groove
Portion is respectively and directly arranged to two sides of copper tungsten, and lug boss outside sets insulating sleeve, to realize that lug boss is partly led with adjacent
Insulation between the concave part of body laser unit, may be referred to the schematic construction in Figure 13 and Figure 14, now lug boss and recessed
Groove portion is equivalent and Figure 13 in the second lug boss and the second concave part position.
Fig. 9 and Figure 10 are respectively embodiments of the invention four, and the semiconductor laser element corresponding to the embodiment.
The semiconductor laser element of example IV uses trapezoidal heat sink block structure so that adjacent semiconductor laser element phase interfix
The semiconductor laser stacks of loop configuration can be obtained after connecing, and the laser that semiconductor laser element is sent has common
Zone of convergence.
In order to optimize the electrical connection effect of above-mentioned loop configuration, the electric connection mode of example IV is specially：Heat sink piece is
Conductive material（Specially copper）, the side that lug boss and concave part are provided with heat sink piece 3 sets insulating barrier 12, positive strap 9
From on the insulating barrier 12 that conductive substrates extend to corresponding heat sink piece, negative straps 8 extend to corresponding heat from laser chip 1
On the insulating barrier 12 of sinker, after adjacent semiconductor laser element is with interference fit socket connection, adjacent heat sinker 3 it is tight
Connection so that the positive strap of adjacent semiconductor laser element and negative straps closely connect realization electrical connection.Work as heat
Sinker 3 is insulating materials（Such as ceramics）, above-mentioned insulating barrier 12 can save.
Example IV has significant advantage in the application of solid state laser pumping：Adjacent semiconductor laser element
Inserting mode connection, is easy to the later stage to change the semiconductor laser element of failure, it is also possible to be flexibly selected as side pump unit
Semiconductor laser element number realizing different application conditions.
Figure 12 and Figure 11 is embodiments of the invention five.A kind of semiconductor laser stacks of mechanical connection type, including with
Grafting form multiple semiconductor laser elements in being installed into heat sink piece 3；Wherein, the semiconductor laser element includes conduction
Substrate 2, is bonded to the laser chip 1 of conductive substrates, and the semiconductor laser element bottom is provided with lug boss, described heat sink
The concave part matched with foregoing lug boss is provided with block so that multiple semiconductor laser element grafting are attached to heat sink piece of shape
Stacked battle array.
Figure 11 is that groove that is multiple equal with semiconductor laser element lug boss number and matching is provided with heat sink piece 3
Portion, the one-to-one grafting of semiconductor laser element is arranged on heat sink piece above and closely connects.Figure 12 be described heat sink piece only
A concave part is provided with, multiple semiconductor laser elements are closely connected in folded array module, and its dielectric substrate constitutes common
Lug boss, foregoing folded array module is arranged on heat sink piece as overall grafting.
It should be noted that conductive substrates 2 and heat sink piece 3 insulation in semiconductor laser element, it is ensured that adjacent semiconductor
Electrical connection between laser element.Specifically, heat sink piece is conductive material（Specially copper etc.）, semiconductor laser element is also
Insulation system including being arranged at conductive substrates bottom, insulation system 4 is provided with lug boss or insulation system itself as convex
The portion of rising（Insulation system in Figure 11 and 12 is from as lug boss）, insulation system is aluminium nitride ceramics etc.；Or use insulation material
Heat sink piece 3 of material, lug boss is arranged at conductive substrates bottom（As shown in figure 13）, or conductive substrates are inserted directly into heat sink piece
In matched concave part.
Additionally, heat sink piece in embodiment five can also use arc or semicircular structure so that semiconductor laser
After unit is installed into heat sink piece 3 in grafting form, the semiconductor laser stacks of loop configuration, and semiconductor laser list are obtained
The laser that unit is sent has common zone of convergence.
The present embodiment can also have following optimization：As shown in Figure 13 and Figure 14, the conductive substrates of semiconductor laser element
The second lug boss 14 and the second concave part 15, and the second projection are respectively arranged with corresponding to heat sink piece of the two of installation direction sides
Portion 14 is mutually matched with the second concave part 15 so that when multiple semiconductor laser element grafting are attached to heat sink piece 3, and adjacent half
It is tightly fastened in grafting form between conductor laser unit, and the second lug boss and adjacent semiconductor laser element
Second concave part splicing position insulate.
Above-mentioned Insulation Scheme is specially：In the second lug boss outer wrap insulating sleeve 13, preferably elastic insulated sleeve pipe makes
Obtain when the second lug boss inserts the second concave part of adjacent semiconductor laser and closely connect.
Claims (13)
1. a kind of semiconductor laser stacks of mechanical connection type, including multiple semiconductor laser elements, it is characterised in that：Institute
State semiconductor laser element and be provided with lug boss and concave part, and lug boss is mutually matched with concave part so that adjacent half
The lug boss and concave part of conductor laser unit connect to form folded battle array structure with inserting mode.
2. semiconductor laser stacks of a kind of mechanical connection type according to claim 1, it is characterised in that：It is described partly to lead
Body laser unit includes conductive substrates and the laser chip being bonded with conductive substrates；The lug boss and concave part are respectively provided with
Insulated with the concave part splicing position of adjacent semiconductor laser element in two sides of conductive substrates, and lug boss.
3. semiconductor laser stacks of a kind of mechanical connection type according to claim 2, it is characterised in that：The projection
Portion's outer wrap insulating sleeve.
4. semiconductor laser stacks of a kind of mechanical connection type according to claim 1, it is characterised in that：It is described partly to lead
Body laser unit includes conductive substrates, the laser chip being bonded with conductive substrates and heat sink piece；Conductive substrates are arranged at heat
Insulated on sinker and between conductive substrates and heat sink piece；Foregoing lug boss and concave part are respectively arranged to correspond on heat sink piece and lead
Two sides of electric substrate mounting surface so that adjacent semiconductor laser element is heat sink piece lug boss and concave part are with grafting
Mode is connected and forms folded battle array structure.
5. semiconductor laser stacks of a kind of mechanical connection type according to claim 4, it is characterised in that：It is described partly to lead
Body laser unit also includes positive strap, negative straps and buffer insulation block, for adjacent semiconductor laser element
Between electrical connection；
The positive strap is bonded in conductive substrates, or positive strap is structure as a whole with conductive substrates, described negative
Pole connection sheet is bonded on laser chip and is connected with the positive strap of adjacent semiconductor laser element；The insulation is slow
Block is rushed to be arranged between negative straps and the conductive substrates of the semiconductor laser element, and thickness is more than the thickness of laser chip
Degree.
6. according to a kind of semiconductor laser stacks of one of claim 1-5 described mechanical connection type, it is characterised in that：Institute
Lug boss is stated for hollow structure, as the folded battle array structured liquids refrigerating channel.
7. according to a kind of semiconductor laser stacks of one of claim 2-5 described mechanical connection type, it is characterised in that：Institute
The conductive substrates stated or heat sink piece are trapezoidal so that multiple semiconductor laser elements are successively being mutually inserted after mode assembles
Circular ring type or semicircular arrays are formed, the laser beam that the multiple semiconductor laser element sends has common convergence zone
Domain.
8. according to a kind of semiconductor laser stacks of one of claim 1-5 described mechanical connection type, it is characterised in that：Institute
Lug boss is stated for pin, the concave part is pin-and-hole；Or the concave part is dovetail groove, lug boss is to be matched with dovetail groove
Structure.
9. a kind of semiconductor laser stacks of mechanical connection type, it is characterised in that：Including being installed into heat sink piece in grafting form
Middle multiple semiconductor laser elements, wherein, semiconductor laser element includes conductive substrates and is bonded in conductive substrates
Laser chip；The semiconductor laser element bottom is provided with lug boss, is provided with described heat sink piece and foregoing projection
The concave part of portion's matching so that multiple semiconductor laser element grafting are attached to heat sink piece and form folded battle array, the conductive substrates
With heat sink piece between insulate.
10. semiconductor laser stacks of a kind of mechanical connection type according to claim 9, it is characterised in that：The heat
Sinker is insulating materials, and foregoing lug boss is arranged at conductive substrates bottom；
Or described heat sink piece is conductive material, semiconductor laser element also includes being arranged at the insulation knot of conductive substrates bottom
Structure, insulation system bottom is provided with lug boss or insulation system itself as lug boss.
A kind of 11. semiconductor laser stacks of mechanical connection type according to claim 10, it is characterised in that：It is described many
Individual semiconductor laser element is closely connected, and its lug boss constitutes an entirety, and described heat sink piece is provided only with a concave part,
Foregoing lug boss is arranged on heat sink piece as overall grafting；Or described heat sink piece be provided with and semiconductor laser element number
The equal concave part of mesh, the multiple semiconductor laser element is plugged to heat sink piece and closely connects one by one.
12. according to a kind of semiconductor laser stacks of one of claim 9-11 described mechanical connection type, it is characterised in that：
The semiconductor laser element also includes positive strap, negative straps and buffer insulation block, swashs for adjacent semiconductor
Electrical connection between light device unit；The positive strap is bonded in conductive substrates, or positive strap and conductive substrates
It is structure as a whole, the negative straps are bonded on laser chip and are connected with the positive pole of adjacent semiconductor laser element
Piece is connected；The buffer insulation block is arranged between negative straps and the conductive substrates of the semiconductor laser element, and thick
Thickness of the degree more than laser chip.
A kind of 13. semiconductor laser stacks of mechanical connection type according to claim 9, it is characterised in that：It is described to lead
Two sides that electric substrate corresponds to heat sink piece of installation direction are respectively arranged with the second lug boss and the second concave part, and second convex
The portion of rising is mutually matched with the second concave part so that adjacent partly to lead when multiple semiconductor laser element grafting are attached to heat sink piece
Be tightly fastened in grafting form between body laser unit, and the second lug boss and adjacent semiconductor laser element the
Two concave part splicing positions insulate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611240954.5A CN106785920B (en) | 2016-12-29 | 2016-12-29 | Mechanically connected semiconductor laser stacked array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611240954.5A CN106785920B (en) | 2016-12-29 | 2016-12-29 | Mechanically connected semiconductor laser stacked array |
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| Publication Number | Publication Date |
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| CN106785920A true CN106785920A (en) | 2017-05-31 |
| CN106785920B CN106785920B (en) | 2024-02-13 |
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| CN201611240954.5A Active CN106785920B (en) | 2016-12-29 | 2016-12-29 | Mechanically connected semiconductor laser stacked array |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110544871A (en) * | 2019-08-29 | 2019-12-06 | 西安域视光电科技有限公司 | Packaging structure and stacked array structure of semiconductor laser |
| CN112993756A (en) * | 2019-11-29 | 2021-06-18 | 山东华光光电子股份有限公司 | Preparation method of semiconductor laser chip |
| CN112993755A (en) * | 2019-11-29 | 2021-06-18 | 山东华光光电子股份有限公司 | Semiconductor laser chip and application method thereof |
| CN116231443A (en) * | 2023-05-08 | 2023-06-06 | 北京凯普林光电科技股份有限公司 | Area array semiconductor laser |
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| CN112993756A (en) * | 2019-11-29 | 2021-06-18 | 山东华光光电子股份有限公司 | Preparation method of semiconductor laser chip |
| CN112993755A (en) * | 2019-11-29 | 2021-06-18 | 山东华光光电子股份有限公司 | Semiconductor laser chip and application method thereof |
| CN112993756B (en) * | 2019-11-29 | 2022-02-08 | 山东华光光电子股份有限公司 | Preparation method of semiconductor laser chip |
| CN112993755B (en) * | 2019-11-29 | 2022-02-18 | 山东华光光电子股份有限公司 | Semiconductor laser chip and application method thereof |
| CN116231443A (en) * | 2023-05-08 | 2023-06-06 | 北京凯普林光电科技股份有限公司 | Area array semiconductor laser |
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