CN206340827U - A kind of semiconductor laser stacks of mechanical connection type - Google Patents
A kind of semiconductor laser stacks of mechanical connection type Download PDFInfo
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- CN206340827U CN206340827U CN201621460149.9U CN201621460149U CN206340827U CN 206340827 U CN206340827 U CN 206340827U CN 201621460149 U CN201621460149 U CN 201621460149U CN 206340827 U CN206340827 U CN 206340827U
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- semiconductor laser
- lug boss
- conductive substrates
- heat sink
- laser element
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Abstract
The utility model provides a kind of semiconductor laser stacks of mechanical connection type, it is made up of multiple semiconductor laser elements, the semiconductor laser element is provided with lug boss and concave part, and lug boss is mutually matched with concave part so that the lug boss and concave part of adjacent semiconductor laser element connect to form folded battle array structure with inserting mode.Semiconductor laser element of the present utility model is assembled using the inserting mode of interference fit, can not only realize the lossless dismounting of semiconductor laser element, and can realize less volume, is radiated beneficial to product.
Description
Technical field
The utility model is related to the envelope of a kind of semiconductor laser, the specially semiconductor laser stacks of mechanical connection type
Assembling structure.
Background technology
Fig. 1 is the encapsulating structure that a kind of existing high-power semiconductor laser folds battle array：Multiple laser chips 1 and it is multiple dissipate
The module is bonded in heat sink by the bonding of thermal conducting substrate 2 again after bar bar group, to be integrally bonded on insulation system 4, then
On；Or laser chip is bonded to conductive substrates one luminescence unit of formation, multiple luminescence units are bonded to insulation lining successively again
Bottom and it is heat sink on.
In the semiconductor laser stacks structure of above-mentioned encapsulating structure, laser chip, conductive substrates, dielectric substrate with it is heat sink
Between using the technique that is mutually bonded, a chip is burnt out, and entirely folded battle array can fail；And the semiconductor laser of the structure
Device later maintenance is complicated, and the failure of one single chip is difficult to individually maintenance and changed in long-term use, and then influences entirely partly to lead
The reliability of body laser.
Utility model content
It is folded the utility model proposes a kind of semiconductor laser of mechanical connection type in order to solve the deficiencies in the prior art
Battle array.
The technical solution of the utility model is as follows：
A kind of semiconductor laser stacks of mechanical connection type, including multiple semiconductor laser elements, it is characterised in that：
The semiconductor laser element is provided with lug boss and concave part, and lug boss is mutually matched with concave part so that adjacent
The lug boss and concave part of semiconductor laser element connect to form folded battle array structure with inserting mode.
The semiconductor laser element structure is divided into following two：
1）Semiconductor laser element includes conductive substrates and the laser chip being bonded with conductive substrates；The lug boss and
Concave part is respectively arranged at two sides of conductive substrates, and the concave part grafting of lug boss and adjacent semiconductor laser element
Place's insulation.
The lug boss outer wrap insulating sleeve.
2）The semiconductor laser element includes conductive substrates, the laser chip being bonded with conductive substrates and heat sink
Block；Conductive substrates are arranged at heat sink piece of upper and insulation between conductive substrates and heat sink piece；Foregoing lug boss and concave part are set respectively
It is placed in heat sink piece of upper two sides corresponding to conductive substrates mounting surface so that what adjacent semiconductor laser element was heat sink piece
Lug boss and concave part are connected with inserting mode and form folded battle array structure.
The semiconductor laser element also includes positive strap, negative straps and buffer insulation block, for adjacent
Electrical connection between semiconductor laser element；The positive strap is bonded in conductive substrates, or positive strap with
Conductive substrates are structure as a whole, the negative straps be bonded on laser chip and with adjacent semiconductor laser element
Positive strap is connected；The buffer insulation block be arranged at negative straps and the semiconductor laser element conductive substrates it
Between, and thickness is more than the thickness of laser chip.
The lug boss is hollow structure, is used as the folded battle array structured liquids refrigerating channel.
Described conductive substrates or heat sink piece are trapezoidal so that multiple semiconductor laser elements are successively to be mutually inserted
Mode forms circular ring type or semicircular arrays after assembling, and the laser beam that the multiple semiconductor laser element is sent has jointly
Zone of convergence.
The lug boss is pin, and the concave part is pin-and-hole；Or the concave part is dovetail groove, lug boss is and swallow
The structure of stern notch matching.
It is below another a kind of semiconductor laser stacks of mechanical connection type of the present utility model, including with grafting shape
Formula is installed into multiple semiconductor laser elements in heat sink piece, wherein, semiconductor laser element includes conductive substrates and key
Together in the laser chip in conductive substrates；The semiconductor laser element bottom is provided with lug boss, described heat sink piece and set
It is equipped with the concave part matched with foregoing lug boss so that multiple semiconductor laser element grafting are attached to heat sink piece and form folded
Battle array, insulate between the conductive substrates and heat sink piece.
Described heat sink piece is insulating materials, and foregoing lug boss is arranged at conductive substrates bottom；Or described heat sink piece is to lead
Electric material, semiconductor laser element also includes the insulation system for being arranged at conductive substrates bottom, and insulation system bottom is provided with
Lug boss or insulation system itself are used as lug boss.
The multiple semiconductor laser element is closely connected, and its lug boss constitutes an entirety, and described heat sink piece only sets
A concave part is equipped with, foregoing lug boss is arranged on heat sink piece as overall grafting；Or described heat sink piece be provided with and half
The equal concave part of conductor laser number of unit, the multiple semiconductor laser element is plugged to heat sink piece and close one by one
Connection.
The semiconductor laser element also includes positive strap, negative straps and buffer insulation block, for adjacent
Electrical connection between semiconductor laser element；The positive strap is bonded in conductive substrates, or positive strap with
Conductive substrates are structure as a whole, the negative straps be bonded on laser chip and with adjacent semiconductor laser element
Positive strap is connected；The buffer insulation block be arranged at negative straps and the semiconductor laser element conductive substrates it
Between, and thickness is more than the thickness of laser chip.
Two sides that the conductive substrates correspond to heat sink piece of installation direction are respectively arranged with the second lug boss and second
Concave part, and the second lug boss is mutually matched with the second concave part so that multiple semiconductor laser element grafting are attached to heat
During sinker, it is tightly fastened between adjacent semiconductor laser element in grafting form, and the second lug boss is partly led with adjacent
The second concave part splicing position insulation of body laser unit.
The utility model has advantages below：
1）Semiconductor laser element can realize independent test, screening, aging, and it is qualified after assembling product to improve
Rate；Adjacent semiconductor laser element is connected by this mechanical connection manner of grafting, can in use and later maintenance
To carry out dismounting replacement to single semiconductor laser element, laser chip will not be caused to damage.
2）Inserting mode of the present utility model can specifically use pin and pin using interference fit or the form of dovetail groove
The structure in hole, can be achieved less volume, and space is small, be radiated beneficial to product.
3）The utility model can be assembled into the semiconductor laser of random length, so as to realize long luminous zone semiconductor laser
The assembling of device, with higher flexibility.
Brief description of the drawings
Fig. 1 is existing packing forms.
Fig. 2 and Fig. 3 are respectively the semiconductor laser element and corresponding folded battle array structure of embodiment one of the present utility model.
Fig. 4 and Fig. 5 are respectively semiconductor laser element corresponding to embodiment two of the present utility model and corresponding folded
Battle array structural representation.
Fig. 6 disassembles view for the structure of the semiconductor laser element of embodiment two.
Fig. 7 is the structure chart of embodiment two.
Fig. 8 is embodiment three of the present utility model.
Fig. 9 is the semiconductor laser element corresponding to example IV of the present utility model.
Figure 10 is the structural representation of example IV of the present utility model.
Figure 11 and Figure 12 are respectively the alternative solution of embodiment five and embodiment five.
Figure 13 and Figure 14 are respectively the semiconductor laser element of the optimization structure of embodiment five and fold battle array structure accordingly.
Drawing reference numeral explanation：1- laser chips, 2- conductive substrates, 3- is heat sink piece, and 4- insulation systems, 5- lug bosses, 6- is recessed
Groove portion, 7- buffer insulation blocks, 8- negative straps, 9- positive straps, 10- water flowing blocks, 11- limbers, 12- insulating barriers, 13-
Insulating sleeve, the conductive layer of 201- conductive substrates, the dielectric base of 202- conductive substrates.
Embodiment
Fig. 2 and Fig. 3 are respectively embodiment one of the present utility model, and the semiconductor laser list corresponding to the embodiment
Member.Semiconductor laser element in Fig. 2 is including conductive substrates 2, the laser chip 1 being bonded with conductive substrates, and heat sink piece
3；Conductive substrates 2 are arranged on heat sink piece 3 and insulated between conductive substrates 2 and heat sink piece 3, and conductive material is selected when heat sink piece
（Such as copper, copper tungsten etc.）When, insulation system 4 is provided between conductive substrates 2 and heat sink piece 3, specifically, conductive substrates 2 are
The metal materials such as copper tungsten, insulation system 4 is aluminium nitride ceramics or overlays on the insulation film of the bottom of conductive substrates 2,；When heat sink piece
From insulating materials（It is such as ceramic）When, aforementioned dielectric structure 4 can be saved.
Above-mentioned heat sink piece 3 of two sides（Corresponding to the mounting surface for installing conductive substrates 2）It is respectively arranged with projection
Portion 5 and concave part 6, and lug boss is mutually matched with concave part so that the projection that adjacent semiconductor laser element is heat sink piece
Portion and concave part are connected with inserting mode and form folded battle array structure.
Above-mentioned heat sink piece of lug boss and concave part is specifically as follows pin and pin-and-hole, or dovetail groove and matching is convex
The portion of rising, it is mechanically coupled together with interference fit.
Fig. 5 and Fig. 4 are respectively embodiment two of the present utility model, and the semiconductor laser list corresponding to the embodiment
Member, embodiment two realizes the optimization on electric connection structure and performance to embodiment one.Semiconductor laser element in Fig. 4
Also include positive strap 9, negative straps 8 and buffer insulation block 7, the positive strap 9 is bonded in conductive substrates 2；
In order to realize more simple structure, positive strap 9 and conductive substrates 2 can be formed integrative-structure.The negative pole connection
Piece 8 is bonded on laser chip 1 and is connected with the positive strap of adjacent semiconductor laser element.
The thickness of buffer insulation block 7 is more than the thickness of laser chip, is arranged at negative straps 8 and the semiconductor laser
Between the conductive substrates 2 of device unit, or be arranged at negative straps 8 and the semiconductor laser element insulation system 4 it
Between.After the installation of buffer insulation block 7 is fixed, it installs the edge that edge exceeds heat sink piece 3 so that adjacent semiconductor laser element
Pressure is applied with to buffer insulation block after being connected with inserting mode and elastic deformation is produced to buffer insulation block 7, it is ensured that negative pole connects
Contact pin 8 is closely connected with the positive strap of adjacent semiconductor laser element.
In order to match the shape of buffer insulation block, negative straps 8 include flat region and bending region, flat region pair
Stress optical chip bond area, the installing zone of bending region correspondence buffer insulation block.
It should be noted that negative straps 8, positive strap 9 are insulated with heat sink piece 3, specific implementation is shown as
Negative straps 8, positive strap 9 keep the safe spacing of insulation with heat sink piece 3, or on heat sink piece 3 of mounting surface
Dielectric film is covered, optimizes insulation effect.
Fig. 6 disassembles view for the structure of Fig. 4 semiconductor laser elements, and Fig. 7 is that the structure of embodiment two in Fig. 5 is disassembled
Figure, in order to improve the radiating efficiency of semiconductor laser stacks, can set liquid refrigerating passage, further in heat sink piece
, lug boss can be set to hollow structure, be used as liquid refrigerating passage.The both sides of semiconductor laser stacks are set in Fig. 7
Water flowing block 10 is equipped with, water flowing block is provided with the limbers 11 connected with liquid refrigerating passage, for external liquid refrigerating equipment.
The semiconductor laser element for constituting folded battle array structure can also be this structure：Including conductive substrates 2 and with conduction
The laser chip 1 of substrate bonding, the lug boss 5 and concave part 6 are respectively arranged at two sides of conductive substrates.Specifically include
Following two optional embodiments：1）As shown in figure 8, conductive substrates include dielectric base 202, and it is arranged at dielectric base 202
The conductive layer 201 on surface, the lug boss 5 and concave part 6 are respectively arranged at two sides of the dielectric base of conductive substrates, make
The concave part splicing position for obtaining lug boss and adjacent semiconductor laser element insulate；Laser chip is bonded on conductive layer 201, and
It is connected with the conductive layer of adjacent semiconductor laser.2）Conductive substrates are conductive material, specially copper tungsten etc., lug boss and groove
Portion is respectively and directly arranged to outside two sides of copper tungsten, lug boss set insulating sleeve, to realize that lug boss is partly led with adjacent
Insulation between the concave part of body laser unit, may be referred to the schematic construction in Figure 13 and Figure 14, now lug boss and recessed
Groove portion is equivalent and Figure 13 in the second lug boss and the second concave part position.
Fig. 9 and Figure 10 are respectively example IV of the present utility model, and the semiconductor laser corresponding to the embodiment
Unit.The semiconductor laser element of example IV uses trapezoidal heat sink block structure so that adjacent semiconductor laser element
The semiconductor laser stacks of loop configuration can be obtained after being mutually inserted, and the laser that semiconductor laser element is sent has
Common zone of convergence.
In order to optimize the electrical connection effect of above-mentioned loop configuration, the electric connection mode of example IV is specially：Heat sink piece is
Conductive material（Specially copper）, heat sink piece 3 side provided with lug boss and concave part, insulating barrier 12, positive strap 9 are set
Extended to from conductive substrates on corresponding heat sink piece insulating barrier 12, negative straps 8 extend to corresponding heat from laser chip 1
On the insulating barrier 12 of sinker, adjacent semiconductor laser element to be interference fitted after socket connection, adjacent heat sinker 3 it is close
Connection so that the positive strap of adjacent semiconductor laser element and negative straps closely connect realization electrical connection.Work as heat
Sinker 3 is insulating materials（It is such as ceramic）, above-mentioned insulating barrier 12 can save.
Example IV has significant advantage in the application of solid state laser pumping：Adjacent semiconductor laser element
Inserting mode is connected, is easy to the later stage to change the semiconductor laser element of failure, can also be flexibly selected as side pump unit
Semiconductor laser element number to realize different application conditions.
Figure 12 and Figure 11 is embodiment five of the present utility model.A kind of semiconductor laser stacks of mechanical connection type, bag
Include and be installed into multiple semiconductor laser elements in heat sink piece 3 in grafting form；Wherein, the semiconductor laser element includes
Conductive substrates 2, are bonded to the laser chip 1 of conductive substrates, the semiconductor laser element bottom is provided with lug boss, described
The concave part matched with foregoing lug boss is provided with heat sink piece so that multiple semiconductor laser element grafting are attached to heat sink
Block forms folded battle array.
Figure 11 be heat sink piece 3 in be provided with it is multiple equal with semiconductor laser element lug boss number and match groove
Portion, the one-to-one grafting of semiconductor laser element is arranged on heat sink piece above and closely connected.Figure 12 be described heat sink piece only
A concave part is provided with, multiple semiconductor laser elements are closely connected in folded array module, and its dielectric substrate constitutes common
Lug boss, foregoing folded array module is arranged on heat sink piece as overall grafting.
It should be noted that conductive substrates 2 and heat sink piece 3 insulation in semiconductor laser element, it is ensured that adjacent semiconductor
Electrical connection between laser element.Specifically, heat sink piece is conductive material（Specially copper etc.）, semiconductor laser element is also
Insulation system including being arranged at conductive substrates bottom, insulation system 4 is provided with lug boss or insulation system itself as convex
The portion of rising（Insulation system in Figure 11 and 12 is from as lug boss）, insulation system is aluminium nitride ceramics etc.；Or use insulation material
Heat sink piece 3 of material, lug boss is arranged at conductive substrates bottom（As shown in figure 13）, or conductive substrates are inserted directly into heat sink piece
In matched concave part.
In addition, heat sink piece in embodiment five can also use arc or semicircular structure so that semiconductor laser
Unit is installed into after heat sink piece 3 in grafting form, obtains the semiconductor laser stacks of loop configuration, and semiconductor laser list
The laser that member is sent has common zone of convergence.
The present embodiment can also have following optimization：As shown in Figure 13 and Figure 14, the conductive substrates of semiconductor laser element
The second lug boss 14 and the second concave part 15, and the second projection are respectively arranged with corresponding to two sides of heat sink piece of installation direction
Portion 14 is mutually matched with the second concave part 15 so that when multiple semiconductor laser element grafting are attached to heat sink piece 3, and adjacent half
It is tightly fastened between conductor laser unit in grafting form, and the second lug boss and adjacent semiconductor laser element
Second concave part splicing position insulate.
Above-mentioned Insulation Scheme is specially：In the second lug boss outer wrap insulating sleeve 13, preferably elastic insulated sleeve pipe makes
Obtain when the second lug boss inserts the second concave part of adjacent semiconductor laser and closely connect.
Claims (13)
1. a kind of semiconductor laser stacks of mechanical connection type, including multiple semiconductor laser elements, it is characterised in that：Institute
State semiconductor laser element and be provided with lug boss and concave part, and lug boss is mutually matched with concave part so that adjacent half
The lug boss and concave part of conductor laser unit connect to form folded battle array structure with inserting mode.
2. a kind of semiconductor laser stacks of mechanical connection type according to claim 1, it is characterised in that：It is described partly to lead
Body laser unit includes conductive substrates and the laser chip being bonded with conductive substrates；The lug boss and concave part are set respectively
Concave part splicing position in two sides of conductive substrates, and lug boss and adjacent semiconductor laser element insulate.
3. a kind of semiconductor laser stacks of mechanical connection type according to claim 2, it is characterised in that：The projection
Portion's outer wrap insulating sleeve.
4. a kind of semiconductor laser stacks of mechanical connection type according to claim 1, it is characterised in that：It is described partly to lead
Body laser unit includes conductive substrates, the laser chip being bonded with conductive substrates and heat sink piece；Conductive substrates are arranged at heat
Insulated on sinker and between conductive substrates and heat sink piece；Foregoing lug boss and concave part are respectively arranged to correspond on heat sink piece and led
Two sides of electric substrate mounting surface so that the lug boss and concave part that adjacent semiconductor laser element is heat sink piece are with grafting
Mode connects and forms folded battle array structure.
5. a kind of semiconductor laser stacks of mechanical connection type according to claim 4, it is characterised in that：It is described partly to lead
Body laser unit also includes positive strap, negative straps and buffer insulation block, for adjacent semiconductor laser element
Between electrical connection；
The positive strap is bonded in conductive substrates, or positive strap is structure as a whole with conductive substrates, described negative
Pole connection sheet is bonded on laser chip and is connected with the positive strap of adjacent semiconductor laser element；The insulation is slow
Block is rushed to be arranged between negative straps and the conductive substrates of the semiconductor laser element, and thickness is more than the thickness of laser chip
Degree.
6. a kind of semiconductor laser stacks of mechanical connection type according to one of claim 1-5, it is characterised in that：Institute
Lug boss is stated for hollow structure, the folded battle array structured liquids refrigerating channel is used as.
7. a kind of semiconductor laser stacks of mechanical connection type according to one of claim 2-5, it is characterised in that：Institute
The conductive substrates stated or heat sink piece are trapezoidal so that multiple semiconductor laser elements are successively to be mutually inserted after mode assembles
Circular ring type or semicircular arrays are formed, the laser beam that the multiple semiconductor laser element is sent has common convergence zone
Domain.
8. a kind of semiconductor laser stacks of mechanical connection type according to one of claim 1-5, it is characterised in that：Institute
Lug boss is stated for pin, the concave part is pin-and-hole；Or the concave part is dovetail groove, lug boss is what is matched with dovetail groove
Structure.
9. a kind of semiconductor laser stacks of mechanical connection type, it is characterised in that：Including being installed into heat sink piece in grafting form
In multiple semiconductor laser elements, wherein, semiconductor laser element includes conductive substrates and being bonded in conductive substrates
Laser chip；The semiconductor laser element bottom is provided with lug boss, described heat sink piece and is provided with and foregoing projection
The concave part of portion's matching so that multiple semiconductor laser element grafting are attached to heat sink piece and form folded battle array, the conductive substrates
With being insulated between heat sink piece.
10. a kind of semiconductor laser stacks of mechanical connection type according to claim 9, it is characterised in that：The heat
Sinker is insulating materials, and foregoing lug boss is arranged at conductive substrates bottom；
Or described heat sink piece is conductive material, semiconductor laser element also includes the insulation knot for being arranged at conductive substrates bottom
Structure, insulation system bottom is provided with lug boss or insulation system itself as lug boss.
11. a kind of semiconductor laser stacks of mechanical connection type according to claim 10, it is characterised in that：It is described many
Individual semiconductor laser element is closely connected, and its lug boss constitutes an entirety, and described heat sink piece is provided only with a concave part,
Foregoing lug boss is arranged on heat sink piece as overall grafting；Or described heat sink piece be provided with and semiconductor laser element number
The equal concave part of mesh, the multiple semiconductor laser element is plugged to heat sink piece and closely connected one by one.
12. a kind of semiconductor laser stacks of mechanical connection type according to one of claim 9-11, it is characterised in that：
The semiconductor laser element also includes positive strap, negative straps and buffer insulation block, swashs for adjacent semiconductor
Electrical connection between light device unit；The positive strap is bonded in conductive substrates, or positive strap and conductive substrates
It is structure as a whole, the negative straps are bonded on laser chip and are connected with the positive pole of adjacent semiconductor laser element
Piece is connected；The buffer insulation block is arranged between negative straps and the conductive substrates of the semiconductor laser element, and thick
Thickness of the degree more than laser chip.
13. a kind of semiconductor laser stacks of mechanical connection type according to claim 9, it is characterised in that：It is described to lead
Two sides that electric substrate corresponds to heat sink piece of installation direction are respectively arranged with the second lug boss and the second concave part, and second convex
The portion of rising is mutually matched with the second concave part so that adjacent partly to lead when multiple semiconductor laser element grafting are attached to heat sink piece
It is tightly fastened between body laser unit in grafting form, and the of the second lug boss and adjacent semiconductor laser element
Two concave part splicing positions insulate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621460149.9U CN206340827U (en) | 2016-12-29 | 2016-12-29 | A kind of semiconductor laser stacks of mechanical connection type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621460149.9U CN206340827U (en) | 2016-12-29 | 2016-12-29 | A kind of semiconductor laser stacks of mechanical connection type |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206340827U true CN206340827U (en) | 2017-07-18 |
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ID=59303435
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201621460149.9U Active CN206340827U (en) | 2016-12-29 | 2016-12-29 | A kind of semiconductor laser stacks of mechanical connection type |
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| CN (1) | CN206340827U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785920A (en) * | 2016-12-29 | 2017-05-31 | 西安炬光科技股份有限公司 | A kind of semiconductor laser stacks of mechanical connection type |
-
2016
- 2016-12-29 CN CN201621460149.9U patent/CN206340827U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106785920A (en) * | 2016-12-29 | 2017-05-31 | 西安炬光科技股份有限公司 | A kind of semiconductor laser stacks of mechanical connection type |
| CN106785920B (en) * | 2016-12-29 | 2024-02-13 | 西安炬光科技股份有限公司 | Mechanically connected semiconductor laser stacked array |
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