CN206575015U - A kind of semiconductor laser stacks of mechanical connection - Google Patents
A kind of semiconductor laser stacks of mechanical connection Download PDFInfo
- Publication number
- CN206575015U CN206575015U CN201720239441.6U CN201720239441U CN206575015U CN 206575015 U CN206575015 U CN 206575015U CN 201720239441 U CN201720239441 U CN 201720239441U CN 206575015 U CN206575015 U CN 206575015U
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- CN
- China
- Prior art keywords
- laser chip
- mounting blocks
- chip module
- laser
- semiconductor laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims description 33
- 239000012634 fragment Substances 0.000 claims description 16
- 238000009413 insulation Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000003292 glue Substances 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 230000006835 compression Effects 0.000 claims description 3
- 238000007906 compression Methods 0.000 claims description 3
- 238000009434 installation Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 2
- 238000012423 maintenance Methods 0.000 abstract description 5
- 229920003266 Leaf® Polymers 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910001285 shape-memory alloy Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Semiconductor Lasers (AREA)
Abstract
The utility model proposes a kind of semiconductor laser stacks of mechanical connection, including laser chip module, installing component and basis are heat sink；Installing component is 2 mounting blocks for being separately positioned on laser chip module two ends, and it is arranged at the connection member between mounting blocks and laser chip module, the pressure that connection member is acted between mounting blocks and laser chip module is so that laser chip inside modules and mutually being compressed between mounting blocks are connected.The utility model realizes the connection between chip unit using mechanical pressure, it is not necessary to be bonded, and can carry out lossless dismounting to one single chip unit in use and later maintenance and replace, and with more preferable flexibility.
Description
Technical field
The utility model is related to a kind of semiconductor laser, the encapsulation of the semiconductor laser stacks specially mechanically connected
Structure.
Background technology
Existing high-power semiconductor laser folds the encapsulating structure of battle array（As shown in Figure 1）For multiple semiconductor laser cores
It is overall to be bonded on an insulating substrate, then again by the module key after piece and multiple radiation conductive substrate bondings is a bar bar groups
Close on heat sink；Or laser chip is bonded to conductive substrates one luminescence unit of formation, multiple luminescence units are bonded successively again
To dielectric substrate and it is heat sink on.In the semiconductor laser stacks structure of above-mentioned encapsulating structure, laser chip, conductive substrates, absolutely
Edge substrate and it is heat sink between using the technique that is mutually bonded, a chip is burnt out, and entirely folded battle array can fail；And the structure
Semiconductor laser later maintenance it is complicated, the failure of one single chip is difficult to individually maintenance and changed in long-term use, and then
Influence the reliability of whole semiconductor laser.
Utility model content
In order to solve the deficiencies in the prior art, the utility model proposes a kind of semiconductor laser stacks of mechanical connection.
The technical solution of the utility model is as follows：
A kind of semiconductor laser stacks of mechanical connection, including laser chip module, installing component and basis are heat sink；
The laser chip module includes multigroup laser chip and corresponding conductive substrates, and the two ends of laser chip module are made respectively
For positive pole and negative pole；The laser chip module by insulation system be installed on basis it is heat sink on；The installing component is difference
It is arranged on 2 mounting blocks at laser chip module two ends, and the connecting portion being arranged between mounting blocks and laser chip module
Part, pressure that connection member is acted between mounting blocks and laser chip module so that laser chip inside modules and with installation
Connection is mutually compressed between block.
The connection member is wedge structure, either cylinder or shell fragment, the preferred memorial alloy of shell fragment or bimetallic
Piece.
In the installing component at least one mounting blocks towards the direction of laser chip module be inclined-plane, connection member with
Foregoing mounting blocks inclined-plane matching so that connection member when by downward pressure, laser chip inside modules and with peace
Fill mutually compression connection between block.
It is provided with the mounting blocks in the V-groove matched with wedge structure, wedge structure wedging groove and causes V-structure
Deformation simultaneously makes its compress connection to laser chip module application pressure.
Pass through in the installing component between mounting blocks and connection member, and/or between mounting blocks and laser chip module
Glue sticking.
The laser chip module is specifically as follows multigroup chip unit and is sequentially connected composition（Chip unit includes conductive liner
Bottom and the laser chip being bonded with conductive substrates）, therefore the power that above-mentioned laser chip inside modules are mutually compressed is embodied in
Compression connection between adjacent chips unit；Laser chip module can also be non-between multigroup conductive substrates and laser chip
Bonding connection, the mechanical pressure realized between conductive substrates and laser chip by the utility model is closely connected.
Buffer insulation block is provided between the conductive substrates that laser chip is bonded with described chip unit so that laser
Chip only conductive substrate contact bonded thereto.The negative pole of the laser chip is real with adjacent conductive substrates by electric connecting sheet
Now electrically connect.Described buffer insulation block is specially aluminium nitride ceramics, or beryllium oxide ceramics.
The mounting blocks of described installing component be mounted directly be fixed on basis it is heat sink on, further, basis it is heat sink with peace
Mounting blocks in dress part are structure as a whole；Or mounting blocks by insulation system be installed on basis it is heat sink on.
The conductive substrates bottom positioned at positive terminal and negative pole end of the laser chip module is provided with metal level, the metal
Layer extends to that basis is heat sink not to utilize region, as drawing positive electrode and draw negative electrode, and metal level and basis are heat sink straight
Connect and be provided with insulation system.
The utility model has advantages below：
1）Each chip unit in laser chip module can realize independent test, screening, aging, improve assembling product
Qualification rate afterwards；Adjacent chips unit is mechanically connected, can be to one single chip in use and later maintenance
Unit carries out dismounting replacement, the semiconductor laser of random length is can be assembled into, with higher flexibility.
2）The utility model realizes the connection between chip unit using mechanical pressure, it is not necessary to is bonded, used
And lossless dismounting replacement can be carried out in later maintenance to one single chip unit.
Brief description of the drawings
Fig. 1 is existing packing forms.
Fig. 2-Fig. 4 is that wedge structure, shell fragment, the structural representation of the different connection members of three kinds of cylinder is respectively adopted.
Fig. 5 is one embodiment using wedge structure.
Fig. 6 is the embodiment two using wedge structure.
Fig. 7 is the optional alternative solution of Fig. 6 embodiments.
Fig. 8 is Fig. 7 schematic top plan view.
Fig. 9 is the optional alternative solution of the utility model electrical connection scheme.
A kind of Figure 10 chip unit structures of the present utility model.
Figure 11 is the semiconductor laser stacks embodiment for employing Figure 10 chip units.
Figure 12-1 is the bimetallic sheet structure under normal temperature, and Figure 12-2 is the bimetallic sheet structure under high temperature.
Drawing reference numeral explanation：1- laser chips, 2- conductive substrates, 3- bases are heat sink, 4- insulation systems, and 5- inclined-planes are installed
Block, 6- mounting blocks, 7- connection members, 8- buffer insulation blocks, 9- electric connecting sheets, 10- metal levels, the active layers of 11- bimetal leafs,
The passive layer of 12- bimetal leafs.
Embodiment
The utility model is illustrated below in conjunction with specific embodiment.
Fig. 2-Fig. 4 is that wedge structure, shell fragment, the structural representation of the different connection members of three kinds of cylinder is respectively adopted.This
The semiconductor laser stacks that utility model is mechanically connected, including laser chip module, installing component and basis heat sink 3.Institute
Stating laser chip module includes multigroup laser chip 1 and corresponding conductive substrates 2, and the laser chip module is specifically as follows
Multigroup chip unit is sequentially connected composition, and 1 group of chip unit is specially conductive substrates 2 and the laser chip being bonded with conductive substrates
1, laser chip module can also be the nonbonding connection between multigroup conductive substrates 2 and laser chip 1（Such as connected by pressure
Connect）.In addition, conductive substrates 2 can be increased between chip unit, or 1 multiple conductive substrates 2 of laser chip correspondence.It is described
The material of conductive substrates 2 is the conductive material with the matched coefficients of thermal expansion of laser chip 1, specifically optional copper tungsten.Laser chip mould
The two ends of block are respectively as positive pole and negative pole, it can be understood as 2 conductive substrates positioned at laser chip module two ends are made respectively
For the positive pole and negative pole of laser chip module, the laser chip module by insulation system 4 be installed on basis it is heat sink on so that
Laser chip 1 and the insulation of basis heat sink 3.
The installing component is 2 mounting blocks 6 for being separately positioned on laser chip module two ends, and is arranged at mounting blocks
Connection member 7 between 6 and laser chip module, the pressure that connection member 7 is acted between mounting blocks and laser chip module
So that laser chip inside modules and between mounting blocks mutually compress be connected.
As shown in Fig. 2 connection member 7 is wedge structure, wedge structure is inserted into mounting blocks 6 according to the direction of arrow in Fig. 2
With laser chip module（The specially conductive substrates at laser chip module two ends）Between so that laser chip inside modules and
It is under pressure between mounting blocks and mutually compresses and be connected.Wherein, the higher metal of the preferred hardness of wedge structure 7, mounting blocks 6 are excellent
The phase selection metal material low to the hardness of wedge structure 7 so that the seam that wedge structure 7 is wedged between mounting blocks and laser chip module
During gap, mounting blocks 6 produce deformation and apply pressure to laser chip module.For example:Mounting blocks 6 can be copper, and wedge structure 7
For the higher steel of hardness.
As shown in figure 3, connection member 7 is shell fragment, shell fragment is installed into mounting blocks 6 and laser chip module（Specially swash
The conductive substrates 2 at optical chip module two ends）Between so that laser chip inside modules and between mounting blocks by shell fragment
Pressure（It is embodied in the elastic force of shell fragment）And mutually compress connection.The alternative construction of the shell fragment has a variety of, such as U-shaped bullet
Piece, bow-shaped shrapnel, shaped form shell fragment etc..
Further, shell fragment can select memorial alloy（shape memory alloy）, shell fragment is in curved under normal temperature state
Curved state applies pressure to laser chip module makes it compress connection, and it is in gentle structure that shell fragment, which recovers after deformation, after heating, is easy to
Dismounting；In addition, shell fragment also can also think bimetal leaf, it is specially the composite construction being made up of active layers and passive layer, active layers
Thermal coefficient of expansion be higher than passive layer, bimetal leaf structure as shown in Figure 12-1 during normal temperature, is warp architecture, can be to laser core
Piece module, which applies pressure, makes its compress connection, the bimetal leaf after heating as shown in fig. 12-2 under the condition of high temperature, due to active layers
Be thermally deformed higher than passive layer, its structure is intended to gentle structure, be easy to dismounting.
As shown in figure 4, connection member 7 is cylindrical structure, cylinder connection member is downward in shown by arrow is born
During power, laser chip module is given by pressure transmission, and cause laser chip inside modules and mutually compressed between mounting blocks
Connection.
Further, the embodiment of several installing component structures presented below so that laser chip module uniform force, even
Connect firm.
As shown by the embodiment in figure 5, the V-groove matched with wedge structure 7, the wedge of wedge structure 7 are provided with the mounting blocks 6
Enter in groove so that V-structure is deformed upon and applying pressure to laser chip module makes it compress connection.Wedge structure 7 is preferably hard
The higher metal of degree（Such as steel）, the low metal material of the preferred hardness of opposite wedge structure 7 of mounting blocks 6（Such as copper）.
In the installing component at least one mounting blocks towards the direction of laser chip module be inclined-plane（Hereinafter referred to as inclined-plane
Mounting blocks 5）, one end that another piece of mounting blocks are adjacent to laser chip module is used as the fixing end of laser chip module.Such as Fig. 6 reality
Apply shown in example, wedge structure connection member 7 is arranged between inclined-plane mounting blocks 5 and laser chip module, connection member 7 and inclined-plane
The inclined-plane matching of mounting blocks 5 so that connection member 7 is when by downward pressure（The direction that arrow is indicated in Fig. 6 is pressure
Direction）, laser chip module is mutually compressed with 2 mounting blocks, and is closely connected between the chip unit in laser chip module
Connect.
Now, the connection member 7 being connected with inclined-plane mounting blocks has the structure of plurality of optional, preferably wedge structure and cylinder
Structure（Such as Fig. 4）.
Further, as shown in fig. 7, the mounting blocks in installing component can also be 2 inclined-plane mounting blocks 5, set respectively
Apply downward pressure simultaneously at laser chip module two ends, and by 2 corresponding connection members 7 so that laser chip module
Closely connected between interior chip unit.
Installed in order that semiconductor laser stacks of the present utility model have in more preferable reliability, the installing component
Pass through glue sticking between block and connection member, and/or between mounting blocks and laser chip module.In Fig. 6, wedge structure 7 with tiltedly
Face mounting blocks 5 can be by UV glue stickings, and wedge structure 7 must be using the material that can pass through UV light, specially clear glass
Or transparent plastic, such as K9 glass etc..In case of need, facing directly can also make between mounting blocks and laser chip module
Use UV glue stickings.Needing the situation of dismounting semiconductor laser stacks, it is only necessary to which corresponding Temperature Treatment is done to folded battle array（Less than-
60 DEG C or higher than 150 DEG C）, decomposable asymmetric choice net UV glue realizes the lossless dismounting of laser chip module.
The mounting blocks of described installing component can be mounted directly be fixed on basis it is heat sink on, further, mounting blocks can
Heat sink it is structure as a whole with basis（As shown in Figure 7）, now, laser chip module and basis is heat sink, between mounting blocks by exhausted
Edge structure 4 insulate；Or mounting blocks by insulation system be installed on basis it is heat sink on.
Fig. 8 is the schematic top plan view of Fig. 7 schemes, the conductive liner for being located at positive terminal and negative pole end of the laser chip module
The bottom of bottom 2 is provided with metal level 10, and the metal level 10 extends to that basis is heat sink not to utilize region, as drawing positive electrode and draw
Go out between negative electrode, and metal level 10 and basis heat sink 3 and be provided with insulation system 4.
The method that the metal level 10 is laid is more, can be utilized according to the heat sink size in basis, therefore Fig. 8 is not
Unique electrode lead-out mode, as shown in figure 9, the outside of mounting blocks can also be arranged on by drawing positive electrode and drawing negative electrode
（The two ends of laser chip module）.
A kind of Figure 10 chip unit structures of the present utility model corresponding with Figure 11 and accordingly folded battle array, to the utility model
The semiconductor laser stacks of mechanical connection are further optimized.Laser chip module SMIS blade unit also includes buffer insulation
Block 8, is arranged between the conductive substrates 2 for being bonded with laser chip so that the only conductive substrates 2 bonded thereto of laser chip 1 connect
Touch, the negative pole of laser chip is realized by electric connecting sheet 9 with adjacent conductive substrates to be electrically connected.The conductive substrates back of the body of chip unit
Face（The face of laser chip is not bonded）With metal level, it is connected for the electric connecting sheet with adjacent chips unit.
The buffer insulation block preferably ceramic or plastics or copper diamond, are specifically as follows aluminium nitride ceramics, oxidation
Beryllium ceramics etc..
As shown in figure 11, after the chip unit of laser chip module is compressed by installing component, in adjacent chips unit
Laser chip do not contacted with adjacent chips unit directly, but by buffer insulation block 8 closely connect, alleviate laser chip
The pressure born, it is to avoid laser chip in encapsulation process caused by the problems such as fail, improve the reliability of product.
Claims (10)
1. a kind of semiconductor laser stacks of mechanical connection, including laser chip module, installing component and basis are heat sink；Institute
Laser chip module is stated including multigroup laser chip and corresponding conductive substrates, the two ends of laser chip module respectively as
Positive pole and negative pole；The laser chip module by insulation system be installed on basis it is heat sink on, it is characterised in that：
The installing component is 2 mounting blocks for being separately positioned on laser chip module two ends, and is arranged at mounting blocks with swashing
Connection member between optical chip module, the pressure that connection member is acted between mounting blocks and laser chip module is so that laser
Compress inside chip module and mutually and be connected between mounting blocks.
2. a kind of semiconductor laser stacks of mechanical connection according to claim 1, it is characterised in that：The connecting portion
Part is wedge structure, or cylinder.
3. a kind of semiconductor laser stacks of mechanical connection according to claim 2, it is characterised in that：The installation portion
The mounting blocks of at least one in part towards the direction of laser chip module be inclined-plane, the inclined-plane of connection member and foregoing mounting blocks
Match somebody with somebody so that connection member is when by downward pressure, laser chip inside modules and the mutual company of compression between mounting blocks
Connect.
4. a kind of semiconductor laser stacks of mechanical connection according to claim 2, it is characterised in that：The mounting blocks
On be provided with the V-groove matched with wedge structure, cause V-structure to deform upon and to laser chip mould in wedge structure wedging groove
Block, which applies pressure, makes it compress connection.
5. a kind of semiconductor laser stacks of mechanical connection according to claim 1, it is characterised in that：The connecting portion
Part is shell fragment.
6. a kind of semiconductor laser stacks of mechanical connection according to claim 5, it is characterised in that：The shell fragment tool
Body is memorial alloy, or bimetal leaf.
7. a kind of semiconductor laser stacks of mechanical connection according to claim 1, it is characterised in that：The installation portion
Pass through glue sticking in part between mounting blocks and connection member, and/or between mounting blocks and laser chip module.
8. a kind of semiconductor laser stacks of mechanical connection according to one of claim 1-7, it is characterised in that：It is described
Basic heat sink be structure as a whole with mounting blocks.
9. a kind of semiconductor laser stacks of mechanical connection according to one of claim 1-7, it is characterised in that：It is described
Specific be sequentially connected by multigroup chip unit of laser chip module constitute, chip unit includes conductive substrates and and conductive substrates
The laser chip of bonding.
10. a kind of semiconductor laser stacks of mechanical connection according to claim 1, it is characterised in that：The laser
Chip module is located at positive terminal and the conductive substrates bottom of negative pole end is provided with metal level, and it is heat sink that the metal level extends to basis
Do not utilize region, as draw positive electrode and draw negative electrode, and metal level and basis it is heat sink between be provided with insulation system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720239441.6U CN206575015U (en) | 2017-03-13 | 2017-03-13 | A kind of semiconductor laser stacks of mechanical connection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720239441.6U CN206575015U (en) | 2017-03-13 | 2017-03-13 | A kind of semiconductor laser stacks of mechanical connection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206575015U true CN206575015U (en) | 2017-10-20 |
Family
ID=60057800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720239441.6U Withdrawn - After Issue CN206575015U (en) | 2017-03-13 | 2017-03-13 | A kind of semiconductor laser stacks of mechanical connection |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN206575015U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107069434A (en) * | 2017-03-13 | 2017-08-18 | 西安炬光科技股份有限公司 | A kind of semiconductor laser stacks of mechanical connection |
| CN111029894A (en) * | 2019-12-27 | 2020-04-17 | 海特光电有限责任公司 | Semiconductor laser and packaging method thereof |
-
2017
- 2017-03-13 CN CN201720239441.6U patent/CN206575015U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107069434A (en) * | 2017-03-13 | 2017-08-18 | 西安炬光科技股份有限公司 | A kind of semiconductor laser stacks of mechanical connection |
| CN107069434B (en) * | 2017-03-13 | 2024-05-10 | 西安炬光科技股份有限公司 | Mechanically connected semiconductor laser stacked array |
| CN111029894A (en) * | 2019-12-27 | 2020-04-17 | 海特光电有限责任公司 | Semiconductor laser and packaging method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20171020 Effective date of abandoning: 20240510 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20171020 Effective date of abandoning: 20240510 |