CN106784196B - A kind of etching mask and the method using etching mask production LED - Google Patents
A kind of etching mask and the method using etching mask production LED Download PDFInfo
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- CN106784196B CN106784196B CN201710054554.3A CN201710054554A CN106784196B CN 106784196 B CN106784196 B CN 106784196B CN 201710054554 A CN201710054554 A CN 201710054554A CN 106784196 B CN106784196 B CN 106784196B
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- 238000005530 etching Methods 0.000 title claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000001312 dry etching Methods 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- -1 polyethylene terephthalate Polymers 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000604 Ferrochrome Inorganic materials 0.000 claims description 3
- 229910000616 Ferromanganese Inorganic materials 0.000 claims description 3
- 108010010803 Gelatin Proteins 0.000 claims description 3
- 239000004695 Polyether sulfone Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 239000000499 gel Substances 0.000 claims description 3
- 229920000159 gelatin Polymers 0.000 claims description 3
- 239000008273 gelatin Substances 0.000 claims description 3
- 235000019322 gelatine Nutrition 0.000 claims description 3
- 235000011852 gelatine desserts Nutrition 0.000 claims description 3
- DALUDRGQOYMVLD-UHFFFAOYSA-N iron manganese Chemical compound [Mn].[Fe] DALUDRGQOYMVLD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001092 metal group alloy Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 3
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 3
- 229920006393 polyether sulfone Polymers 0.000 claims description 3
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 3
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 claims description 3
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 230000001788 irregular Effects 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims 1
- 150000002466 imines Chemical class 0.000 claims 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims 1
- 229920002647 polyamide Polymers 0.000 claims 1
- 238000004064 recycling Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 description 5
- 238000004026 adhesive bonding Methods 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000003712 anti-aging effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Led Devices (AREA)
- Weting (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention belongs to semiconductor fabrication process fields, it is related to a kind of etching mask and the method using etching mask production LED, the etching mask includes first flexible substrate, the first adhesion layer and the patterned structures layer for stacking gradually simultaneously close adhesion, the etching mask is placed in epitaxial wafer surface, it can will be in the pattern transfer to epitaxial wafer of patterned structures layer using dry etching, make graphical epitaxial wafer, convenient and efficient, saving cost；On patterned structures layer after second adhesion layer and second flexible substrate to be adhered to dry etching simultaneously, patterned structures layer is removed to re-form etching mask, realizes its recycling property.
Description
Technical field
The invention belongs to field of semiconductor manufacture more particularly to a kind of recycling etching mask and use the etching
The method of mask manufacture LED.
Background technique
Currently, needing that the expected pattern of photoetching process production is used for multiple times in the manufacture craft of LED.Photoetching process, i.e., first will be against corrosion
Agent (such as photoresist) is coated on epitaxial wafer, is then exposed to resist.Hereafter, by dissolving reservation in developer solution
The anti-aging drug part (eurymeric) of pattern, or by making Resist portions become difficult to dissolution (minus), it is against corrosion to be formed
Agent mask, and by etching (such as dry etching and wet etching) epitaxial wafer, formation, which has, to be etched part and does not etch
The pattern of Etching mask is transferred on epitaxial wafer by partial pattern.Since gluing, exposure, development step make in photoetching process
The raising of LED cost of manufacture, fabrication cycle extension are obtained, therefore, it is necessary to make necessary improvement to the production method of LED.
Summary of the invention
To solve the above problems, the MESA using etching mask production LED schemes the present invention provides a kind of etching mask
When case, without the gluing in photoetching process, exposure, development step, it is only necessary to etching mask is placed on epitaxial wafer and carved by dry method
Erosion can be obtained expected MESA pattern, and wherein etching mask can also recycle, convenient and efficient, saving cost.
In order to realize this purpose, according to an aspect of the invention, there is provided a kind of etching mask, the etching mask packet
The first flexible substrate for stacking gradually and bonding, the first adhesion layer and patterned structures layer are included, the patterned structures layer is by multiple
Several minor structures are alternatively arranged composition.
Preferably, a plurality of minor structure rules or irregular spacing arrangement in the step 2
Preferably, the material of the first flexible substrate be silica gel, gel gelatin, polyethylene terephthalate,
Any one in polyethylene naphthalate, polycarbonate, polyether sulfone, polyimides or soft glass plastics.
Preferably, the material of first adhesion layer is Resin adhesive.
Preferably, the material of the patterned structures layer is torpescence metal, torpescence metal alloy, torpescence metal oxygen
Compound, torpescence metal nitride or torpescence metal carbides.
Preferably, the material of the patterned structures layer is chromium, nickel, copper, ferromanganese, ferrochrome, zirconium oxide, nitridation
Any one in silicon or silicon carbide.
In order to realize this purpose, according to another aspect of the present invention, provide a kind of using above-mentioned etching mask production LED
Method, this method comprises:
1) epitaxial wafer is provided, the epitaxial wafer includes at least substrate, and stacks gradually in the N-type on the substrate
Layer, luminescent layer and P-type layer；
2) etching mask is placed in the epitaxial wafer upper surface, the etching mask includes for stacking gradually and bonding
One flexible base board, the first adhesion layer and patterned structures layer, the patterned structures layer are alternatively arranged group by a plurality of minor structures
At；
3) etching mask and epitaxial wafer are performed etching using dry etching, is removed not by the patterned structures layer
The first flexible substrate of covering, the first adhesion layer and part N-type layer；
4) one second adhesion layer and second flexible substrate are successively covered on the patterned structures layer, are formed inverted
Etching mask after applying pressure for a period of time to the inverted etching mask, applies external force and carries out removing removal；
5) cleaning step 4) in the remaining first flexible substrate and the first adhesion layer, form graphical epitaxial wafer；
6) electrode structure is made in the graphical epitaxial wafer surface, and forms a plurality of LED by cutting separation.
Preferably, the size of the etching mask is more than or equal to the size of substrate.
Preferably, the first flexible substrate is identical with second flexible substrate, first adhesion layer and the second adhesion layer
It is identical.
Preferably, the epitaxial layer further includes the transparency conducting layer in the P-type layer.
Preferably, in the step 4) is applied to the inverted etching mask pressure certain time and is heated to certain temperature
Degree.
In order to realize this purpose, according to another aspect of the present invention, a kind of LED is provided, includes at least and stack gradually
Substrate, N-type layer, P-type layer and electrode structure, it is characterised in that: the light emitting diode is adopted to be made with the aforedescribed process.
The present invention at least have the advantages that in the on the one hand production method of the LED without in photoetching process gluing,
Exposure, development step, it is only necessary to etching mask is placed on epitaxial wafer and expected MESA pattern can be obtained by dry etching,
On the other hand the etching mask can also be recycled, so that the production process side of LED in the manufacturing process of LED by removing
Just quick, and save cost of manufacture.
Detailed description of the invention
Fig. 1 is the etching mask side structure schematic view of the present invention.
Fig. 2 is the etching mask overlooking structure diagram of the present invention.
Fig. 3 ~ 8 are the LED production flow diagram of the present invention.
Fig. 9 is the LED side structure schematic view of the present invention.
Attached drawing mark:
10. etching mask；11. first flexible substrate；12. the first adhesion layer；13. patterned structures layer；131. sub
Structure；14. second flexible substrate；15. the second adhesion layer；20. epitaxial wafer；21. substrate；22. N-type layer；23. shining
Layer；24. P-type layer；25. electrode structure.
Specific embodiment
The present invention is more specifically described by way of example referring to attached drawing in the following passage.It is wanted according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is all made of very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Figures 1 and 2 show that etching mask 10(of the invention hereinafter referred to as " mask ").Show from the side of the mask 10
It is intended to it is observed that the mask 10 includes three layers from bottom to up, respectively first flexible substrate 11,12 and of the first adhesion layer
Patterned structures layer 13, patterned structures layer 13 pass through the first adhesion layer 12 and 11 close adhesion of first flexible substrate.Graphically
Structure sheaf 13 is alternatively arranged by a plurality of minor structures 131 and is formed, and minor structure 131 rule or can be irregularly spaced apart from and be arranged in
In first flexible substrate 11.In the manufacturing process of LED, usual minor structure 131 is regularly arranged in first flexible substrate 11,
And 131 size of minor structure, shape are identical, and the figure of minor structure 131 is MESA pattern in the present embodiment.First flexible substrate 11
Material can select silica gel, gel gelatin, polyethylene terephthalate, polyethylene naphthalate, poly- carbonic acid
Any one in ester, polyether sulfone, polyimides or soft glass plastics, preferred silica gel in the present embodiment；First adhesion layer 12
Material can use resin adhesive, especially epoxy resin adhesive；The material of patterned structures layer 13 can be using not
Active metal, torpescence metal alloy, torpescence metal oxide, torpescence metal nitride or torpescence metallic carbide
Object may further be selected any one in chromium, nickel, copper, ferromanganese, ferrochrome, zirconium oxide, silicon nitride, silicon carbide etc.
Kind, preferred chromium in the present embodiment.Wherein, due to the material of patterned structures layer 13 and the first adhesion layer 12 and first flexible substrate 11
Material differs greatly, when using mask 10 carry out dry etching when, maximum etching selectivity can be obtained, make dry etching etc.
Gas ions perform etching first flexible substrate 11 and the first adhesion layer 12, and to the etching degree very little of patterned structures layer 13
Or it does not etch.
Fig. 3 ~ 8 show a kind of method using above-mentioned etching mask 10 production LED, and this method process includes following step
It is rapid:
1) epitaxial wafer 20 is provided, which includes at least substrate 21, and stacks gradually in the N-type on substrate 21
Layer 22, luminescent layer 23 and P-type layer 24；
2) above-mentioned etching mask 10 is placed in 20 surface of epitaxial wafer, specific 10 structure of etching mask is as described above；
3) etching mask 10 and epitaxial wafer 20 are performed etching using dry etching, removal is not covered by patterned structures layer 13
The first flexible substrate 11 of lid, the first adhesion layer 12 and part N-type layer 21；
4) one second adhesion layer 15 and second flexible substrate 14 are successively covered on patterned structures layer 13, are formed and is inverted
Etching mask 10, to inverted etching mask 10 apply pressure for a period of time after, apply external force carry out removing removal；
5) cleaning step 4) in the remaining first flexible substrate 11 and the first adhesion layer 12, form graphical extension
Piece；
6) electrode structure 25 is made in graphical 20 surface of epitaxial wafer, and forms a plurality of LED by cutting separation.
In the manufacturing process of LED, etching mask 10 makes flexible base board 11 and patterned structures layer 13 by adhesion layer 12
It is adhered to each other, guarantees that the position of 13 figure of patterned structures layer is accurate, minor structure 131 therein is prevented to be subjected to displacement.And
After the second adhesion layer 15 and second flexible substrate 14 are successively covered in patterned structures layer 13 in step 4), inverted quarter is formed
Mask 10 is lost, applies the external force of certain time to it, it is therefore an objective to make the second adhesion layer 15 and second flexible substrate 14 and graphical
13 tight adhesion of structure sheaf guarantees to remove patterned structures layer 13 when subsequent external force is removed.In another embodiment party
In formula, certain temperature, the second adhesion layer of enhancing 15 and second flexible substrate 14 and figure are heated to inverted etching mask 10
Change the adhesiveness of structure sheaf 13.Inverted etching mask 10 after removing is by after overturning, it can as next epitaxial wafer
The mask graphically made, etching mask 10 is recycled.Wherein, epitaxial wafer 20 includes at least the lining stacked gradually
Bottom 21, N-type layer 22, luminescent layer 23 and P-type layer 24, epitaxial wafer 20 can also include the transparency conducting layer positioned at 24 surface of P-type layer,
Such as indium tin oxide layer.The size of etching mask 10 is more than or equal to the size of substrate 21, can so guarantee to pass through dry etching
Method the figure of etching mask 10 is accurately transferred on epitaxial wafer 20, form graphical epitaxial wafer 20.Substrate 21 is plain film
Perhaps patterned substrate material is sapphire, silicon, silicon carbide, glass or gallium nitride to substrate, and preferred economy is real in the present embodiment
Graphical sapphire substrate.When carrying out dry ecthing using etching mask 10, be patterned the covering of structure sheaf 13 first is soft
Property substrate 11, the first adhesion layer 12 and part N-type layer 22 can not be bombarded by plasma (in Fig. 5 shown in arrow), and not by
Its 11 first adhesion layer 12 of first flexible substrate covered and part N-type layer 22 are then successively etched by plasma bombardment, from
And the figure of etching mask 10 is accurately transferred in N-type layer 22.Chemical solution or organic solvent can be used in step 5)
Remaining the first adhesion layer 12 and first flexible substrate 11 after cleaning dry etching.The structure of specific etching mask 10 is for example above-mentioned
Described, details are not described herein again.
Referring to attached drawing 9, the present invention also provides a kind of LED made by the above method, include at least and stack gradually
Substrate 21, N-type layer 22, luminescent layer 23, P-type layer 24 and electrode structure 25.The light emitting diode can also be on 24 upper layer of P-type layer
Folded transparency conducting layer.
LED is made using above-mentioned recycling etching mask 10, saves gluing in conventional photolithography, exposure, development
Step, it is only necessary to etching mask 10 is placed on epitaxial wafer 20 and expected MESA pattern can be obtained by dry etching, it is convenient
Fast, cost is saved.
It should be understood that above-mentioned specific embodiment is the preferred embodiment of the present invention, the scope of the present invention is not limited to
The embodiment, all any changes done according to the present invention, all within category protection scope of the present invention.
Claims (10)
1. a kind of production LED method, it is characterised in that: steps are as follows for its specific method:
1) epitaxial wafer is provided, the epitaxial wafer includes at least substrate, and stacks gradually in the N-type layer on the substrate, hair
Photosphere and P-type layer；
2) etching mask is placed in the epitaxial wafer upper surface, the etching mask includes stacking gradually and bonding first soft
Property substrate, the first adhesion layer and patterned structures layer, the patterned structures layer is alternatively arranged by a plurality of minor structures to be formed；
3) etching mask and epitaxial wafer are performed etching using dry etching, removal is not covered by the patterned structures layer
First flexible substrate, the first adhesion layer and part N-type layer；
4) one second adhesion layer and second flexible substrate are successively covered on the patterned structures layer, form inverted etching
Mask after applying pressure for a period of time to the inverted etching mask, applies external force and carries out removing removal；
5) cleaning step 4) in the remaining first flexible substrate and the first adhesion layer, form graphical epitaxial wafer；
6) electrode structure is made in the graphical epitaxial wafer surface, and forms a plurality of LED by cutting separation.
2. a kind of LED production method according to claim 1, it is characterised in that: the size of the etching mask be greater than etc.
In the size of substrate.
3. a kind of LED production method according to claim 1, it is characterised in that: the first flexible substrate and second soft
Property substrate is identical, and first adhesion layer and the second adhesion layer are identical.
4. a kind of LED production method according to claim 1, it is characterised in that: the epitaxial layer further includes being located at the P
Transparency conducting layer on type layer.
5. a kind of LED production method according to claim 1, it is characterised in that: to described inverted in the step 4)
Etching mask applies pressure certain time and is heated to certain temperature.
6. a kind of LED production method according to claim 1, it is characterised in that: a plurality of minor structures rule or
Irregular spacing arrangement.
7. a kind of LED production method according to claim 1, it is characterised in that: the material of the first flexible substrate is
Silica gel, gel gelatin, polyethylene terephthalate, polyethylene naphthalate, polycarbonate, polyether sulfone, polyamides
Any one in imines or soft glass plastics.
8. a kind of LED production method according to claim 1, it is characterised in that: the material of first adhesion layer is tree
Rouge adhesive.
9. a kind of LED production method according to claim 1, it is characterised in that: the material of the patterned structures layer is
Torpescence metal, torpescence metal alloy, torpescence metal oxide, torpescence metal nitride or torpescence metallic carbide
Object.
10. a kind of LED production method according to claim 9, it is characterised in that: the material of the patterned structures layer is
Any one in chromium, nickel, copper, ferromanganese, ferrochrome, zirconium oxide, silicon nitride or silicon carbide.
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| CN201710054554.3A CN106784196B (en) | 2017-01-24 | 2017-01-24 | A kind of etching mask and the method using etching mask production LED |
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| CN201710054554.3A CN106784196B (en) | 2017-01-24 | 2017-01-24 | A kind of etching mask and the method using etching mask production LED |
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| CN103268056A (en) * | 2013-05-10 | 2013-08-28 | 西安建筑科技大学 | Flexible mask plate and making method thereof |
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