TW201234947A - Method for manufacturing element substrate - Google Patents

Abstract

A method for manufacturing an element substrate includes the following steps. A carrying member is provided. The carrying member has a first surface and a second surface which is located around the first surface. Then, a material layer is formed on the carrying member. A portion of the material layer covers the first surface, and the other portion of the material layer covers the second surface. The adhesion between the material layer and the second surface is larger than that between the material layer and the first surface. After that, a component is formed on the material layer. Then, the material layer is cut along a cutting line to form the element substrate. The element substrate and the carrying member are separated.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an element substrate, and more particularly to a method of manufacturing an element substrate using a carrier having different adhesion in a process. [Prior Art] The rapid development of the technology of display shows that the use of the display is very common. Since the glass itself has good light transmittance and load-bearing strength, at present, the glass is mostly used as a substrate material in mass production. Thinning is the future trend of the display. However, glass has a large specific gravity and must have a considerable thickness in order to maintain the strength of the substrate and the surface flatness, so that a considerable portion of the overall weight of the glass is estimated. At present, the industry often reduces the thickness and weight of the glass substrate by chemical engraving or grinding to make the display lighter and thinner. However, these two methods tend to increase the defect rate and manufacturing cost of the product. In addition, the glass substrate also has the disadvantage of being easily broken and poorly bent. In contrast, the 'flexible substrate not only has the advantages of flexibility, light weight, and impact resistance φη. > but also allows for a thinner substrate thickness to be used, and the thinner process can be omitted. Therefore, the development potential of the flexible substrate is quite = ° soft substrate material can be, for example, plastic, resin or other high-molecular materials; bucket;,;;,, because the soft substrate is too soft (low rigidity) may be in the hair = clip Improper effects on holding, storing or cleaning, such as impact, deflection, vibration, contamination or static electricity. In addition, the softness of the flexible substrate also causes the substrate itself to be scratched or generated during the reliability test. 3 201234947

TW6976PA, B aging phenomenon. Furthermore, based on the soft property, the flexible substrate cannot be directly used as the substrate of the component directly into the manufacturing process of most current display manufacturers. Therefore, the flexible substrate needs to be additionally matched with a rigid carrier such as a glass substrate to conform to the process-to-substrate. Specification of the degree of curvature (plate bend). The current practice is to use a comprehensive adhesive layer to bond the flexible substrate to the rigid carrier, and then form, for example, a thin film transistor on the plastic substrate, and then re-transfer, for example, by laser irradiation to make the glass substrate and the plastic substrate The adhesive layer interface generates thermal cracking to separate the plastic substrate from the glass substrate. However, as the size of the glass substrate and the plastic substrate increases, the ability to control the laser will greatly affect the yield and productivity, resulting in a significant increase in production costs. SUMMARY OF THE INVENTION The present invention relates to a method of manufacturing an element substrate which is bonded to an element substrate by a surface having a different adhesion of the carrier. 9 As a result, the current process of the display does not need to be greatly changed, and the component substrate can be produced by such a relatively simple process, and the finished component substrate can be easily removed after a relatively simple cutting step, thereby having a cost advantage. According to the present invention, a method of manufacturing an element substrate is provided, comprising: providing a carrier having a first surface and a second surface, the second surface being located around the first surface; forming a material layer on the carrier , :::: the material layer covers the first surface, and the other part of the material layer = the surface of the 'surface' and the adhesion of the second surface is greater than the adhesion of the material layer to the first surface; On the material layer; and (4) along the cutting line to form the element substrate, the element 201234947 TW6976PA, the substrate and the carrier are separated from each other. According to the present invention, a method of manufacturing a (four) piece substrate is further proposed. Γ a carrier plate; forming a release structure on the carrier plate to form a second surface having a first surface and formed on the carrier plate: the upper surface is located on the first surface of the eve of the ridge. Around U, a layer of material is formed on the carrier, a portion of the material layer covers the first surface, and the other portion = surface ': the adhesion of the layer to the second surface is greater than and along the i-cut to green The attached component is formed on the material layer; in the above and other aspects of the present invention; more preferably: the preferred embodiment of the 冓文特牛, and in conjunction with the closed type, is described in detail as follows: Please refer to Fig. 1, which shows a flow chart according to the manufacturing method of the present board. The continuation base of the m example and the first Γ provide the carrier, the carrier has a first surface and the surface of the second surface is located around the first surface. Carrying a carrier plate, the carrier plate has a plate bending 4λ|, a high temperature resistant and resistant plate, such as a sloping shirt, a composite substrate, a metal substrate. Next, in step s103, a material layer is formed on the carrier. Flexibility, high temperature resistance and chemical resistance are poly-branched, imide 'PI) materials. Poly-Asian bi-plastics are stable solutions at room temperature (four), but via heat 2 = 5 201234947

TW6976PA is a stable solid form that is resistant to chemical attack in the process. After curing, the glass transition temperature (Tg) of polyiminamide is about 380 ° C, which can withstand the general component process temperature. Alternatively, the photoinitiator can be added to the polyamidamine to be cured using ultraviolet (ultra Vi), UV so that the pattern can be defined by a lithography process. In addition, polyamidoamine may be added with organic or inorganic additives to adjust its adhesion or other physicochemical properties. A portion of the material layer covers the first surface and another portion of the material layer covers the second surface. The adhesion of the material layer to the second surface is based on the adhesion of the material layer to the first surface. The adhesion of the first surface to the material layer* allows the separation of the element substrate from the carrier to be easily performed. In addition, the adhesion of the first surface to the material layer should be such as to avoid adverse effects on the overall structure in subsequent processes. For example, the second table = the adhesion between the layers of the material, must ensure that the coating is not split (PeeUng) in the coating of the display element; another example is 'in the middle; the liquid will not The adhesion between the two must ensure that the subsequent material-free layer and the carrier are between the material layer and the carrier to avoid forming the component on the material layer. Component Light limiting layer. Stepping elements or color from the A to the general display process. Row cutting, cutting or punching = the plate along the - (four) line. The cutting method is, for example, a laser cutting, a U-knife secant %-wound element, and the range is between the element and the boundary of the material layer, the 盖 盖 cover carrier - 1/1. Here, the boundary of the return layer refers to the material layer covering the part and the cover bearing second 201234947

The material of this part of the TW6976PA surface is sound = Γ. Separation_Usage example: Adhesive = plate = No. 7 execution, part of the material (four) is by step of the material layer I: on the Du and the first table

The separation to form the component substrate can be easily performed on the same carrier. In the following, the flow of steps in the first embodiment will be further described in several embodiments. The components of the first embodiment are m2A~2E ® , and the process of the fourth embodiment of the present invention is described. schematic diagram. The 2A and the =r= steps in the figure ^ ^ correspond to the steps (4) 3 to 4 (4) in the magic map. As will be described in detail below, the carrier member ιι provided by the processes in the second and second drawings (4) the flute 2 surface U1S1 and the second surface 112 must have the second surface 112s2 located around the first surface 111s1. In Fig. 2A, a carrier ηι, a carrier plate lllsl is provided. " Negative Brothers Next, in Figure 2B, a patterned release structure is formed on the first surface 111s1 of the carrier 111 to form the carrier u〇. The release structure m has a second surface 112s2. The release structure (1) here may be, for example, a Thin Film-etching process, a film-lithography 7 201234947

TW6976PA I 1 ' (Lithography) - a patterned layered structure formed by etching, letterpress, screen printing, transfer, inkjet or lamination. In the case where the patterned structure 112 is formed by a film-detail process, the release material layer is first formed on the first surface 111s1 of the carrier H1. Thereafter, the mask is placed over the release material layer to cover at least a portion of the release material layer, and another portion of the release material is exposed through the central opening of the mask structure. The release material layer overlying the unmasked structure is then removed, e.g., by plasma bombardment, such that the remaining release material layer is patterned to form a structure 112. In addition, in order to form the patterned release structure 112 by a thin film-lithography-etching process, the mask structure and the photoresist need to be matched with each other. In the case of selecting a negative photoresist, after sequentially forming a release material layer and a negative photoresist on the first surface 11 of the carrier Hi, the mask structure covers the release material layer which is not desired to be retained. Above the negative photoresist, that is, the two mask structure is located above the negative photoresist of the central portion. Thereafter, the step of entering the lamp = light and developing causes the photoresist of the central portion covered by the mask structure to dissolve to expose a portion of the release material layer. Then, the release material θ not covered by the negative photoresist is removed by way of example, and the negative photoresist is removed, so that the remaining release material layer forms the pattern structure US α to select the positive type. In terms of photoresist, after forming sequentially, θ and positive photoresist are on the first surface 111s1 of the carrier 111, the =η structure is overlaid on the release material layer and the positive photoresist to be retained. Said that the 'mask structure is a structure with a central opening. Thereafter, the step of the positive punishment and the shirt is such that the central portion not covered by the mask structure, such as the 曰Φ photoresist, dissolves to expose a portion of the release material layer. Then, the release profile 201234947 TW6976PA _ layer not covered by the positive photoresist is removed by, for example, electric bombardment, and the positive photoresist is removed, so that the remaining release material layer forms a patterned release. Structure 112. The material of the release structure 112 is, for example, polyimide (PI) or a high adhesion additive. The formation of the patterned release structure 112 does not require a significant change to the current process and mechanism of the display, and does not even need to be changed. In addition, since the material of the release structure U2 is a commonly used material for the current display process, the cost has Advantage. Then, in FIG. 2C, a material layer 120 is formed on the carrier 110. A portion of the material layer 120 covers the first surface 111s1 and another portion of the material layer 120 covers the second surface 112s2. The adhesion of the material layer 120 to the second surface i12s2 is greater than the adhesion of the material layer 120 to the first surface 111s1 through the selection of the high adhesion additive of the material layer 12〇. Next, in FIG. 2D, element 130 is formed on material layer 12A. Then, in Fig. 2E, the material layer 12A is cut along the dicing line B11 to form the element substrate 100. The element substrate 1A and the carrier 110 are separated from each other. #Please refer to FIGS. 3A to 3E', which is a flow chart showing a second manufacturing method of the element substrate according to the first embodiment of the present invention. In contrast to the above-described release structure 112 being a patterned layered structure, the following is an example in which the release structure 212 is a patterned microparticle collection. Figs. 3A and 3B correspond to step S101 in Fig. 1, and Figs. 3C to 3E correspond to steps S103 to S107 in Fig. 1, respectively. The details are explained below. The carrier 21 提供 provided by the processes in FIGS. 3A and 3B has a first surface 211s1 and a second surface 212s2, and the second surface 212s2 is located around the first surface 211s1. The details are explained below. lIMr. 9 201234947

TW6976PA I t In FIG. 3A, a carrier 211 is provided. The carrier 211 has a first surface 211 si and then 'in FIG. 3B' forms a patterned release structure 212 on the first surface 211S1 of the carrier 211. To form the carrier 21〇. The release structure 212 has a second surface 212s2. The release structure 212 herein may be, for example, a patterned microparticle collection formed by a thin film-etching process, a relief printing, a screen printing, a transfer, an inkjet or a lamination, and the second surface 212s2 is such a microparticle. The surface formed by the collection. In the case where the patterned release structure 212 is formed by a thin film-etching process, a release material layer including a collection of fine particles is first formed on the entire first surface 211sl of the carrier 211. Thereafter, the mask structure is placed over the release material layer to cover at least a portion of the release material layer, and another portion of the release material layer is exposed through the central opening of the mask structure. The release material layer that is not covered by the masking structure is then removed, e.g., by plasma bombardment, such that the remaining release material layer forms a patterned release structure 212. Such fine particle collections are, for example, polymer fine particle mixed rubber. In other words, the 3rd Bth image can be regarded as a flow step of roughening the first surface 211s1 of the three portions of the carrier 211 through the formation of the patterned release structure 212 to form the carrier 210. Since the patterned release structure 212 is formed without significantly changing the manufacturing method and mechanism of the current display, and even without changing, the cost is advantageous. Then, in Fig. 3C, the material layer 22 is formed on the carrier 21A. A portion of the material layer 220 covers the first surface 21ls1 and another portion of the material layer 220 covers the second surface 212s2. Since the second surface 212s2 formed by the microparticle collection is rougher than the first surface 211S1, the adhesion of the material layer 220 to the second surface 212s2 is greater than the adhesion of the material layer 201234947 TW6976PA, 220 to the first surface 21 lsl. Next, in FIG. 3D, element 230 is formed on material layer 220. Then, in the 3E drawing, the material layer 220 is cut along the dicing line B12 to form the element substrate 2A. The element substrate 2A and the carrier 210 are separated from each other. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to Figs. 4A to 4E, there is shown a flow chart showing a method of manufacturing a substrate according to a second embodiment of the present invention. Compared with the second manufacturing method of the element substrate 100 of the first embodiment, the manufacturing method of the element substrate 2 of the present embodiment roughens the surface in a different manner to change the adhesion of the surface. 4A and 4B correspond to the step si1 in Fig. 1, and the 4C to 4E maps correspond to the steps sl1 to S107 in Fig. 1, respectively. The details are explained below. The carrier 310 provided by the processes in FIGS. 4A and 4B has a first surface 311s1 and a second surface 3Us2, and the second surface 3Us2 is located around the first surface 311s1. In Fig. 4A, a carrier 311 is provided, which has a first surface 311si. 311 1 Next, in Fig. 4B, a portion of the first surface is roughened to form the carrier 31〇. The first surface of the roughened portion forms a second surface 311s2. The step of roughening is carried out, for example, by means of grinding or sand blasting. For example, the mask can be configured to be above the surface 3Usl and cover the first surface of the central portion 〇11S1 ° ^ ^, to roughen the unmasked 201234947 TW697WA by, for example, plasma bombardment, „ The first surface 311s1 is covered by the structure to form the second surface 311s2. Since the step of forming the patterned roughened surface does not need to greatly change the manufacturing method and mechanism of the current display, and even does not need to be changed, the cost has an advantage. In Fig. 4C, a material layer 320 is formed on the carrier 310. A portion of the material layer 320 covers the first surface 311s1, and another portion of the material layer 320 covers the second surface 31 ls2. In addition, the second surface 311s2 It is rougher than the first surface 311s1. Therefore, the adhesion between the material layer 320 and the second surface 311s2 is greater than the adhesion of the material layer 320 to the first surface ru llsl. Next, in the 4D figure, the component 330 is formed on the material layer. Then, in Fig. 4E, the material layer 320 is cut along the cutting line B2 to form the element substrate 300. The element substrate 300 and the carrier 310 are separated from each other. For example, please refer to FIGS. 5A to 5E, which are schematic flowcharts showing a method of manufacturing a substrate for a component according to a third embodiment of the present invention. The first manufacturing method of the component substrate 1 of the first embodiment is shown. The arrangement position and material of the release structure 412 of the present embodiment are different. The 5A and 5B drawings correspond to the step S101 in the first figure, and the 505E diagram corresponds to the step S103 in the first figure, respectively. Step S107 is described in detail below. The carrier 410 provided by the processes in FIGS. 5A and 5B has a first surface 412s1 and a second surface 411s2, and the second surface 411s2 is located around the first surface 412sl. 12 201234947 TW69-76PA · As shown in Fig. 5A, a carrier plate 411 is provided, and the carrier plate 411 has a second surface 411 s2. As shown in Fig. 5B, a patterned release structure 'I〗 is formed. The second surface 411s2 of the plate 411 is formed to form the carrier 41. The release structure 412 has a first surface 412sl. The patterned release structure 412 can be, for example, a thin film-etch process, a thin film-lithography process. , film-washing process, letterpress printing, screen printing Formed by transfer, inkjet or lamination, and the material of the release structure 412 is, for example, a release agent. Generally, in order to prevent the formed composite product from sticking on the mold, the product and the mold The release agent is usually applied to allow the article to be easily removed from the mold. Here, a release agent is used as the material of the release structure 412 to allow the element substrate 400 to be easily separated from the carrier 41. . The release agent may be in the form of a film, a solution, a paste or a wax. The film type release agent may be a polyester, polyethylene, polyethylene gas, cellophane or fluoroplastic film. The solution type release agent may be a hydrocarbon, an alcohol, a carboxylic acid, a carboxylic acid ester, a metal salt of a carboxylic acid, a ketone, an amide, and an oxime hydrocarbon. Paste and waxy release agent package • 矽 ester, HK_5 〇 heat-resistant grease, cylinder oil, gasoline and asphalt solution and 躐 type. Then, as shown in FIG. 5C, a material layer 420 is formed on the carrier 410. A portion of the material layer 420 covers the first surface 412sl and another portion of the material layer 420 covers the second surface 411s2. In addition, the adhesion between the release structure 412 and the material layer 420 by the release agent as the material of the release structure 412 is reduced. That is, the adhesion of the material layer 420 to the second surface 41 ls2 is greater than the adhesion of the material layer 420 to the first surface 412sl. 13 201234947 TW6976PA, „Next' in Figure 5D, element 430 is formed on material layer 420. Then, in Figure 5E, the material layer 420 is cut along the cutting line B3 to form the element substrate 4〇〇 Separating the element substrate 4A from the carrier 410. In this embodiment, if an unpatterned release junction is formed by a thin film process.

In addition to the patterning by the edge washing method, the patterning can be formed by the rice etching process steps of Figs. 6A to 6C. Referring to Figures 6A to 6C, there is no other schematic diagram of the process of forming the patterned release structure 412 on the carrier 411. As shown in Fig. 6A, a release material layer 700 is formed on the second surface 41 ls2 of the carrier 411. As shown in FIG. 6B, the placement mask structure 800 is above the release material layer 700. The mask structure 8 is at least partially covered by the release material layer 7A. In the present embodiment, the mask structure 8 has a plurality of projections 81. The mask structure 800 can be positioned over the release material layer 700 through the squeezing tab 810'. The release material layer 700' removed from the unmasked structure cover 800 is shown in Figure 6C such that the remaining release material layer 7 is tethered to form a patterned release structure 412. This removal step may remove the release material layer 700 that is not covered by the mask structure 800 by plasma bombardment to form a patterned release structure 412. The steps in Figures 6A to 6C are for example done in a single cavity. The mask structure 800 is rotated to change the position of the release material layer 7〇〇. Alternatively, the foregoing steps can also be accomplished in a dual chamber. When the foregoing steps are completed in the double cavity, the mask structure in each cavity covers the release type 201234947

The TW6976PA material layer 700 is positioned differently to remove the release material layer 700 that is not covered by the mask structure to form the patterned release structure 412. Alternatively, the patterned release structure 412 can also be formed by a thin film-lithography-etch process. In order to form the patterned release structure 412 by a thin film-lithography-etching process, the mask structure and the photoresist need to be matched with each other. In the case of selecting a negative photoresist, after sequentially forming the release material layer and the negative photoresist on the second surface 41 ls2 of the carrier 411, the mask structure covers the release material layer which is not desired to be retained. Above the negative photoresist, that is, • The mask structure is a structure with a central opening. Thereafter, exposure and development are performed such that the surrounding negative photoresist covered by the mask structure dissolves to expose a portion of the release material layer. The release material layer not covered by the negative photoresist is then removed, e.g., by plasma bombardment, and the negative photoresist is removed such that the remaining release material layer forms a patterned release structure 412. In the case of selecting a positive photoresist, after sequentially forming a release material layer and a positive photoresist on the second surface 411s2 of the carrier 411, the mask structure covers the release material layer and the positive light to be retained. Above the resistance, that is, the mask structure is located above the positive photoresist of the central portion. Thereafter, the step of exposing and developing is performed such that the positive photoresist of the peripheral portion not covered by the mask structure is dissolved to expose a portion of the release material layer. The release material layer not covered by the positive photoresist is then removed, e.g., by plasma bombardment, and the positive photoresist is removed such that the remaining release material layer forms the patterned release structure 412. The formation of the patterned release structure 412 in this embodiment does not require a significant change in the manufacturing process and mechanism of the current display, and does not even need to be changed, so that the cost has advantages. 15

201234947 TW6976PA Fourth Embodiment Referring to Figures 7A to 7F, there is shown a flow chart showing a method of manufacturing a component substrate according to a fourth embodiment of the present invention. The 7A to 7C maps correspond to the step S101 in Fig. 1, and the 7D to 7F maps correspond to the steps S103 to S107 in Fig. 1, respectively. The details are explained below. The carrier 510 provided by the steps in Figs. 7A to 7C has a first surface 512s1 and a second surface 512s2, and the second surface 512s2 is located around the first surface 512s1. As shown in FIG. 7A, a carrier 511 is provided.

Next, as shown in Fig. 7B, a first release structure 512a is formed on the carrier 511, and the first release structure 512a has a first surface 512s1. Here, the first release structure 512a can be formed, for example, by a thin film-etch process, a film-lithography-etch process, a relief printing, a screen printing, a transfer, an ink jet, or a bonding. The manner of forming the patterned first release structure 512a by a thin film-etch process and a thin film-lithography-etch process is similar to forming a third by a thin film-etch process and a thin film-lithography-etch process, respectively. The patterned release structure 412 of the embodiment, therefore, will not be repeated here. The first release structure 512a is, for example, a rubber material which is easy to work with and can withstand high temperatures. The heavy-duty adhesive can be easily removed, so that the carrier 511 can be recycled. In addition, the rubber has a high temperature resistance to avoid air bubbles or cracking during the process. Heavy duty and high temperature resistant adhesives can be, for example, acrylic or silicone. Acrylic adhesives can be in hot or UV form. The adhesive state of the acrylic type of the hot type is lowered at a low temperature, and the UV 201234947 TW6976PA* type of the Ricky adhesive is reduced in adhesion at a specific wavelength. In addition, the main feature of Shi Xi Likang is that it can be physically removed during heavy work and has good temperature resistance. Fesce Then, as shown in Fig. 7C, a second release structure 512b is formed on the carrier 511 to form the carrier 51〇. The second release structure 51 aperture has a second surface 512s2. In this embodiment, the second release structure 51 can be formed by a film-etching process, a film-lithography-etching process, a letterpress printing, a screen printing, a transfer, an inkjet or a bonding, and the second leaving Type structure 51讣• For example, a material that has good chemical resistance, high temperature resistance, and high adhesion to the carrier plate 511, such as a sealant (Sea〇), because of a film-etching process and a film-lithography-etching process The manner of forming the patterned second release structure 512b is similar to the patterned release structure 112 of the first embodiment, respectively, by a thin-knit process and a film-lithography process. Next, the description will not be repeated here. Next, as shown in Fig. 7D, a material layer 520 is formed on the carrier 51. In the present embodiment, the material layer 520 includes a surface treatment layer 521 and a substrate material layer 522. Due to the choice of materials, the adhesion between the surface treatment layer 521 and the substrate material layer 522 is not separated in the component process, and the two are easily separated after the component substrate is cut. A part of the surface treatment layer 521 Contact the first surface 512sl And another portion of the surface treatment layer 521 contacts the second surface 512s2, and the substrate material layer 522 is located on the surface treatment layer 521. In other words, the substrate material layer 522 does not contact the first surface 512s1 and the second surface 512s2. The material 521 is the release agent exemplified in the third embodiment, and the surface treatment layer 521 can be formed, for example, on the substrate material layer 522 in advance to form the material layer 52. Since s 17 201234947

TW6976PA I ί» The selection of the material, the adhesion of the surface treatment layer 521 of the material layer 520 to the second surface 512s2 is greater than the adhesion of the surface treatment layer 521 of the material layer 520 to the first surface 512sl. Next, in Figure 7E, element 530 is formed over material layer 520. Then, in the Fig. 7F, the material layer 520 is cut along the dicing line B4 to form the element substrate 506. The element substrate 500 and the carrier 510 are separated from each other. Since the patterned first release structure 512a and the second release structure 512b do not need to be greatly changed, the process and mechanism of the current display are not changed, and the cost is advantageous. Referring to FIGS. 8A to 8D, there are shown schematic flow charts of a method of manufacturing another component substrate according to a fourth embodiment of the present invention. The carrier 510' formed by steps similar to those in Figs. 7A-7C is as shown in Fig. 8A. The carrier 510' has a first surface 512sl' and a second surface 512s2'' and the second surface 512s2' is located around the first surface 512s1. Next, as shown in Fig. 8B, a material layer 520' is formed on the carrier 510'. A portion of the material layer 520' covers the first surface 512sl'' and the other portion of the material layer 520 covers the second surface 512s2'. In other words, the portion of material layer 520' contacts first surface 512sl'' and the portion of material layer 520' contacts second surface 512s2'. Due to the material selection, the adhesion of the material layer 520' to the second surface 512s2' is greater than the adhesion of the material layer 520' to the first surface 512sl'. Next, in Figure 8C, element 530' is formed over material layer 520' 201234947 TW6976PA. Then, in Fig. 8D, the material layer 520 is cut along the dicing line B4 to form the element substrate 500'. The element substrate 500 is separated from the carrier 510'. As a result, the element substrate 5A formed in Fig. 8D can have an advantage similar to that of the element substrate 5A in Fig. 7F. In the first to fourth embodiments according to the flowchart in FIG. 1 described above

The split ruthenium substrate is separated from the carrier. That is, any element or structure of the carrier is included. In contrast, the following is explained. The shell substrate of the shell example further includes a release structure. In the following fifth embodiment, please refer to the ninth to ninth drawings and the flute 1 Λ the fifth embodiment/heart diagram of the present invention, and the ninth to nineteenth drawings illustrate the flow and the manufacturing method of the manufacturing method of the 筮_疋 substrate according to the drawing. Flow chart. The 基板 Π 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五In step S703, the process and the film are etched on the carrier 611 by a film-etching, ink-jet or bonding method, letterpress printing, screen printing, transfer of the second form® 6& Microcarrier 610. Since the film-structure 612 is divided into two, the process is to form a patterned release type, and the member is formed by a thin film-etching process and a thin i 201234947

The TW6976PA t. film-lithography-etch process is used to form the patterned release structure 412 of the third embodiment. Thus, the description will not be repeated here. The release structure 612 has a first surface 612sl' and a second surface 611s2 is located around the first surface 612sl. In the present embodiment, the material of the release structure 612 is, for example, Polyimide (PI) or a low adhesion additive. Then, as shown in Fig. 9C, in step S705, a material layer 620 is formed on the carrier 610. The material of the material layer 620 is, for example, a polyamidamine (Po 1 y i in i de 'PI ) mixed southern additive. . A portion of the material layer 620 covers the second surface 611s2, and another portion of the material layer 620 φ covers the first surface 612s1. The adhesion of the high adhesion additive through the material layer 620 'the adhesion of the material layer 620 to the second surface 61 ls2 is greater than the adhesion of the material layer 620 to the first surface 612sl. The adhesion of the first surface 612s1 to the material layer 620 is such that separation of the element substrate 620 from the carrier 610 is facilitated. In addition, the adhesion of the second surface 611S2 to the material layer 620 herein is such as to avoid adverse effects on the overall structure in the subsequent process. For example, the adhesion between the second surface 611S2 and the material layer 620 must be ensured that the material layer 62 and the φ carrier 610 are not peeled apart during the component process; for another example, the second The adhesion between the surface 611s2 and the material layer 620 must ensure that the subsequent chemical solution does not readily penetrate between the material layer 620 and the carrier 610 to avoid the material layer 620 and the carrier 610 from being detached from the process. . Next, as shown in Fig. 9D, in step S707, an element 630 is formed on the material layer 620. Element 630 can be, for example, an active element, a passive element, a touch function element, or a colored photoresist layer. Then, as shown in Fig. 9E, in step S709, the material layer 620 is cut along the cutting line 20 201234947 TW6976PA . B5 to form the element substrate 600. The element substrate 600 and the carrier 610 are separated from each other, and the element substrate 600 includes a release structure 612. The step in Fig. 9E is, for example, cutting by means of laser, wheel cutter or punching. The cutting line B5 surrounds the element 630 and is between the element 630 and the boundaries of the material layers 620. In addition, the boundary between the material layers 620 herein means that the material layer covers the boundary of the material layer 620 of the first surface 612s1 and the material layer 620 of the other portion covers the material layer 620 of the second surface 61 ls2. φ forming the patterned release structure 612 does not require a significant change in the current display process and mechanism of the display, and even does not need to be changed; in addition, since the material of the release structure 612 is a commonly used material for the display process, the cost is Advantages. The invention has been described above by way of a preferred embodiment, and is not intended to limit the invention. It is to be understood that those skilled in the art can make various <RTI ID=0.0> Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a method of manufacturing an element substrate according to an embodiment of the present invention. 2A to 2E are schematic views showing the flow of the first manufacturing method of the element substrate according to the first embodiment of the present invention. 3A to 3E are schematic views showing the flow of a second manufacturing method of the element substrate according to the first embodiment of the present invention. s 21 201234947 TW6976PA, 4A to 4E are schematic flow charts showing a method of manufacturing the element substrate according to the second embodiment of the present invention. 5A to 5E are schematic views showing the flow of a method of manufacturing an element substrate according to a third embodiment of the present invention. 6A to 6C illustrate another flow of forming a patterned release structure on a carrier. 7A to 7F are schematic views showing the flow of a method of manufacturing a component substrate according to a fourth embodiment of the present invention. 8A to 8D are views showing the flow of another method of manufacturing a substrate of a substrate according to a fourth embodiment of the present invention. 9A to 9E are schematic views showing the flow of a method of manufacturing an element substrate according to a fifth embodiment of the present invention. Fig. 10 is a flow chart showing a method of manufacturing a component substrate in accordance with a fifth embodiment of the present invention. [Description of main component symbols] 100, 200, 300, 400, 500, 500', 600: component substrate 110, 210, 310, 410, 510, 510', 610: carrier 11 Bu 21 Bu 3U, 4U, 5H , 611: carrier plates 1111, 211sl, 311sl, 412sl, 512sb512sl, 612sl: first surface 112, 212, 412, 612: release structure 112s2, 212s2, 311s2, 411s2, 512s2, 512s2', 611s2: first surface 120, 220, 320, 420, 520, 520', 620: material layer 22 201234947

TW6976PA 630: element 130, 230, 330, 430, 530, 530' 512a: first release structure 512b: second release structure 521: surface treatment layer 522: substrate material layer 700: release material layer 800: mask Structure 810: protrusion cutting line φ B11, B12, B2, B3, B4, B4', B5 S101~S107, S701~S709: flow step

twenty three

Claims (1)

201234947 TW6976PA t ·- 7. The scope of the patent application: i. A method for manufacturing a component substrate, comprising: providing a carrier having a first surface and a second surface, the second surface being located on the first surface Surrounding; forming a material layer on the carrier, a portion of the material layer covering the first surface, and another portion of the material layer covering the second surface, the material layer and the second surface The adhesion is greater than the adhesion of the material layer to the first surface; "μ forms an element on the material layer; and the plate cuts the material layer along a cutting line to form an element substrate. The method of manufacturing the component substrate according to claim 1, wherein the step of providing the carrier comprises: providing a carrier, the carrier having the first surface; Forming a release structure on the first surface of the carrier, the release structure having the second surface. The composition of the component is as described in claim 2 a method in which the method of forming the release film-(four) process is formed, and the release structure is the same as the manufacturing structure of the component substrate of the application phase _ 2, The release structure is manufactured by a process, a convex plate printing, a mesh, etc. The manufacturing method of the component substrate described in claim 2 is in the step 10 of forming the release structure, and the release structure includes 24 201234947 TW6976PA ' 6. The method of manufacturing a component substrate according to claim 2, wherein in the step of forming the release structure, the release structure comprises a plurality of fine particles. The method of manufacturing a component substrate according to Item 1, wherein the step of providing the carrier comprises: providing a carrier having the first surface; and roughening a portion of the first surface to form the carrier The first surface of the portion roughened by rough Φ forms the second surface, and the second surface has a roughness greater than that of the first surface. 8. According to claim 7 Narration The method of manufacturing a substrate, wherein the step of roughening comprises: forming a plurality of microparticles on the first surface of the portion such that the microparticles form the second surface. 9. According to claim 7 The method of manufacturing a component substrate, wherein the step of roughening comprises: • etching the first surface of the portion of the carrier. 10. The method of manufacturing the component substrate according to claim 7, wherein the roughening The method of manufacturing the component substrate of the first aspect of the invention, wherein the step of providing the carrier comprises: providing one load a plate having the second surface; and a release structure formed on the second surface of the carrier to form the carrier, the release structure having the first surface. 25 201234947 TW6976PA 12. The method of claim 5, wherein in the step of forming the release structure, the fabrication is by a thin film-etch process or a thin film-lithography-etch process: shape? Structure 13. The method for manufacturing a Yuanxian plate as described in the scope of the patent application, wherein in the step of forming the release structure, the release structure is convex plate printing, screen printing, transfer, It is formed by inkjet or bonding. 14. The method of manufacturing a component substrate according to claim 5, wherein the step of forming the release structure comprises: Forming a release material layer on the second surface of the carrier; placing a mask structure over the release material layer, the mask structure covering at least a portion of the release material layer; In addition to the release material layer that is not covered by the mask structure, the remaining release material layer forms the release structure. 15. The method of manufacturing a component substrate as described in claim 4, wherein the step of removing is to remove the release material layer not covered by the mask structure by plasma bombardment or edge washing. 16. The method of manufacturing a component substrate according to claim 1, wherein the step of providing the carrier comprises: providing a carrier; forming a first release structure on the carrier, the first leaving The structure has the first surface; and the second release structure is formed on the carrier to form the carrier, the second release structure has the second surface; wherein in the step of forming the material layer A portion of the layer of material contacts the first surface and another layer of material contacts the second surface. The method of manufacturing the component substrate of claim 16, wherein in the step of forming the first release structure, the first release structure is a thin film-etch process or Formed by a thin film-lithography-etching process. 18. The method of manufacturing a component substrate according to claim 16, wherein in the step of forming the first release structure, the first release structure is convex plate printing, screen printing, transfer, It is formed by inkjet or bonding. The method of manufacturing a component substrate according to claim 18, wherein the material of the first release structure is an acrylic adhesive or a Silicone adhesive. 20. The method of manufacturing a component substrate according to claim 16, wherein in the step of forming the second release structure, the second release structure is a film-etch process or a film-lithography-etching process. The way the process is formed. 21. The method of manufacturing a component substrate according to claim 16, wherein in the step of forming the second release structure, the second release structure is convex plate printing, screen printing, transfer Formed by inkjet or lamination. 22. A method of manufacturing a component substrate, comprising: providing a carrier; forming a release structure on the carrier to form a carrier, the release structure having a first surface and formed on the carrier On a second surface, the second surface is located around the first surface; a material layer is formed on the carrier, and a portion of the material layer is coated 27 201234947 TW6976PA · · covers the first surface, and another A portion of the layer of material covers the second surface, the adhesion of the layer of material to the second surface is greater than the adhesion of the layer of material to the first surface; forming an element on the layer of material; The cutting line cuts the material layer to form an element substrate, the element substrate and the carrier are separated from each other, and the element substrate includes the release structure. 28