CN106784109A - 一种碲锰镉/铜铟镓硒叠层太阳能电池 - Google Patents
一种碲锰镉/铜铟镓硒叠层太阳能电池 Download PDFInfo
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- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title claims abstract description 32
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- 238000000151 deposition Methods 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 12
- 239000010949 copper Substances 0.000 claims description 12
- 150000001336 alkenes Chemical class 0.000 claims description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910021389 graphene Inorganic materials 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 7
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- 239000004065 semiconductor Substances 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229920003023 plastic Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 241001634884 Cochlicopa lubricella Species 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 210000001142 back Anatomy 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
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- 238000002360 preparation method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
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Abstract
本发明公开了一种碲锰镉/铜铟镓硒叠层太阳能电池,在透明衬底的两面分别沉积宽带隙的碲锰镉太阳能电池和窄带隙的铜铟镓硒太阳能电池,这种碲锰镉/铜铟镓硒叠层太阳能电池结构不仅大大扩展了对太阳光谱的吸收范围,最大程度地提高了太阳光能的利用,提高了光电转换效率,而且还解决了传统叠层太阳能电池存在的晶格匹配等问题。本发明结构简单、工艺简便、应用范围广泛。
Description
技术领域
本发明涉及叠层太阳能电池,具体是指碲锰镉和铜铟镓硒叠层太阳能电池。
背景技术
目前如何寻求新材料、新结构来改善太阳能电池的光伏性能参数是困扰光伏工作者的最大难题之一。在对传统太阳电池研究的基础上,叠层太阳电池的研究备受光伏界的关注。
为了最大程度地有效利用更宽广波长范围内的太阳光能量,太阳光谱可以被分成连续的若干部分,用能量宽度与这些部分有最好匹配的材料做成电池,并按能隙从大到小的顺序从外向里叠合起来,让波长最短的光被最外边的宽带隙材料电池利用,波长较长的光能够透射进去让较窄能隙材料电池利用,这样就有可能最大限度地将太阳光能转换成电能,具有这种结构的太阳能电池称为叠层电池。
叠层太阳能电池的设计难题在于要寻找两种晶格匹配良好的半导体材料,其禁带宽度将引起高效率的能量转换。此外,在理想的情况下,电池导带的最上层应该有与底层价带大约相同的能量,这使得顶端半导体的电子被太阳光激发后能够很容易的从导带进入底部半导体晶格的孔(价带),电子在价带上又被不同波长的太阳光激发。这样一来,两部分的电池一起工作,像两个串联的蓄电池,并且总功率与两个电池的功率总和相等。但是,如果在接合处价带和导带没有被正确的匹配,当电子流过时就会因为由此产生的电阻造成功率损耗。例如,高效率的GaAs/Ge叠层电池早在1987年就制备出来了,结果证明由于电流不匹配而不能应用。另外就是实际应用中叠层电池的稳定性问题。
碲锰镉(Cd1-xMnxTe)薄膜太阳能电池是在衬底上沉积多层薄膜而构成的光伏器件。碲锰镉薄膜太阳能电池一般结构包括:玻璃衬底,在玻璃衬底上依次沉积有透明导电前电极、n型CdS窗口层、p型碲锰镉吸收层、背电极。这种结构的碲锰镉薄膜太阳能电池对光的吸收利用率不高。太阳光从外界依次经过玻璃衬底、透明导电前电极、n型CdS窗口层,最后才到达碲锰镉吸收层。受各层光透射率等因素的影响,部分光能被以上各层反射和散射回外界,或被衰减转换成热。同时,由于碲锰镉吸收层很薄,有部分光没完全被吸收而透过吸收层。
美国可再生能源实验室计算发现,叠层太阳能电池顶电池和底电池最佳的禁带宽度分别为1.7eV和1.1eV。碲锰镉的禁带宽度随x值可在1.45eV到2.46eV间连续可调。而铜铟镓硒(CIGS)薄膜太阳能电池的禁带宽度为1.1eV,而且具有较高的光电转换效率和良好的抗辐射性能,是非常适合做叠层电池的底电池的材料之一。
发明内容
为了解决传统叠层太阳能电池面临的晶格匹配等问题,以及碲锰镉吸收层对太阳光的不完全吸收。本发明的目的在于提出一种在透明衬底的二面分别生长碲锰镉和铜铟镓硒太阳能电池,构成一种碲锰镉和铜铟镓硒叠层太阳能电池。
本发明的技术方案是:一种碲锰镉/铜铟镓硒叠层太阳能电池,包括:透明衬底,在透明衬底迎光面上沉积有一吸收偏向短波的高能太阳光的碲锰镉太阳能电池,在透明衬底背光面上沉积有一吸收偏向长波的低能太阳光的铜铟镓硒太阳能电池。
所述的碲锰镉太阳能电池,由在透明衬底的迎光面上依次沉积的透明导电背电极、p型碲锰镉吸收层、n型CdS窗口层、透明导电前电极构成,所述透明导电背电极包括依次层叠的石墨烯层、纳米金属薄膜层以及墨烯层,所述透明导电前电极包括金属网格层和石墨烯层,所述透明衬底和透明导电背电极之间具有扩散阻挡层。
所述的铜铟镓硒太阳能电池,由在透明衬底的背光面上依次沉积的透明导电前电极、n型CdS窗口层、p型铜铟镓硒吸收层、背电极构成,所述透明导电前电极(6)包括依次层叠的石墨烯层、纳米金属薄膜层以及墨烯层,所述背电极(9)选自Mo、Cu/Au、Cu/Ni、Al/Ni中的任一种,所述透明衬底和透明导电前电极之间具有扩散阻挡层。
所述的透明衬底为透明玻璃、透明聚酰亚胺、透明塑料中的任一种。
本发明采用在透明衬底的双面制备碲锰镉和铜铟镓硒叠层太阳能电池,不仅可以提高光能的利用率和光电转换效率,而且解决了传统叠层电池存在的晶格匹配等问题。同时具有结构简单、工艺简便、应用范围广泛等优点。
附图说明
图1为本发明的碲锰镉/铜铟镓硒叠层太阳能电池的结构示意图。
具体实施方式
下面给出本发明的较佳实施例,并结合附图做详细说明。
见图1,本发明的碲锰镉/铜铟镓硒叠层太阳能电池,包括:透明衬底1,在透明衬底1的迎光面上依次沉积透明导电背电极2,p型碲锰镉吸收层3,n型CdS窗口层4,透明导电前电极5,所述透明导电背电极2包括依次层叠的石墨烯层、纳米金属薄膜层以及墨烯层,所述透明导电前电极5包括金属网格层和石墨烯层,所述透明衬底1和透明导电背电极2之间具有扩散阻挡层,以构成碲锰镉太阳能电池。在透明衬底1的背光面上依次沉积透明导电前电极6,n型CdS窗口层7,p型铜铟镓硒吸收层8,背电极9,所述透明导电前电极6包括依次层叠的石墨烯层、纳米金属薄膜层以及墨烯层,所述背电极9选自Mo、Cu/Au、Cu/Ni、Al/Ni中的任一种,所述透明衬底1和透明导电前电极6之间具有扩散阻挡层,以构成铜铟镓硒太阳能电池。
其制备过程如下:
首先,在透明衬底1的两面分别形成扩散阻挡层,然后分别溅射沉积厚度为200~800纳米的透明导电背电极2和前电极6,透明导电背电极2和前电极6均为依次层叠的石墨烯层、纳米金属薄膜层以及墨烯层。其中透明衬底为透明玻璃、透明聚酰亚胺、透明塑料中的任一种。
在背电极层2上磁控溅射p型碲锰镉吸收层3,厚度为500~2000纳米。
采用射频溅射方法在p型碲锰镉吸收层3上沉积n型CdS窗口层4,厚度为50~100纳米,在制备好n型CdS窗口层4后,将其放置在快速退火炉中进行退火。退火温度在200~400℃,退火时间40~120分钟。退火结束后,在n型CdS窗口层4上沉积100~400纳米的透明导电前电极5,所述透明导电前电极5包括金属网格层和石墨烯层。
在透明导电前电极6上磁控溅射厚度为50~100纳米的n型CdS窗口层7。采用共蒸发法,即用Cu、In、Ga、Se进行反应蒸发,在n型CdS窗口层7上沉积铜铟镓硒吸收层8,厚度为1000~2000纳米。蒸发时,衬底温度控制在300~500℃,在铜铟镓硒吸收层8上沉积背电极9,厚度10~30纳米,材料为Mo、Cu/Au、Cu/Ni、Al/Ni中的任一种。
上述实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。
Claims (3)
1.一种碲锰镉/铜铟镓硒叠层太阳能电池,包括:透明衬底(1),其特征在于:在透明衬底迎光面上沉积有一吸收偏向短波的高能太阳光的碲锰镉太阳能电池,在透明衬底背光面上沉积有一吸收偏向长波的低能太阳光的铜铟镓硒太阳能电池。
2.根据权利要求1的一种碲锰镉/铜铟镓硒叠层太阳能电池,其特征在于:所述的碲锰镉太阳能电池,由在透明衬底(1)的迎光面上依次沉积的透明导电背电极(2)、p型碲锰镉吸收层(3)、n型CdS窗口层(4)、透明导电前电极(5)构成,所述透明导电背电极(2)包括依次层叠的石墨烯层、纳米金属薄膜层以及墨烯层,所述透明导电前电极(5)包括金属网格层和石墨烯层,所述透明衬底(1)和透明导电背电极(2)之间具有扩散阻挡层。
3.根据权利要求1的一种碲锰镉/铜铟镓硒叠层太阳能电池,其特征在于:所述的铜铟镓硒太阳能电池,由在透明衬底(1)的背光面上依次沉积的透明导电前电极(6)、n型CdS窗口层(7)、p型铜铟镓硒吸收层(8)、背电极(9)构成,所述透明导电前电极(6)包括依次层叠的石墨烯层、纳米金属薄膜层以及墨烯层,所述背电极(9)选自Mo、Cu/Au、Cu/Ni、Al/Ni中的任一种,所述透明衬底(1)和透明导电前电极(6)之间具有扩散阻挡层。
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