CN106783639A - A kind of production method of semiconductor devices - Google Patents
A kind of production method of semiconductor devices Download PDFInfo
- Publication number
- CN106783639A CN106783639A CN201611039279.XA CN201611039279A CN106783639A CN 106783639 A CN106783639 A CN 106783639A CN 201611039279 A CN201611039279 A CN 201611039279A CN 106783639 A CN106783639 A CN 106783639A
- Authority
- CN
- China
- Prior art keywords
- tin cream
- semiconductor devices
- finished product
- production method
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 239000006071 cream Substances 0.000 claims abstract description 54
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000011265 semifinished product Substances 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000003860 storage Methods 0.000 claims description 10
- 239000000047 product Substances 0.000 claims description 8
- 238000010257 thawing Methods 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 5
- 239000005030 aluminium foil Substances 0.000 claims description 3
- 238000005086 pumping Methods 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000000843 powder Substances 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000005476 soldering Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention discloses a kind of production method of semiconductor devices, including：S4：The semiconductor devices semi-finished product for being coated with tin cream are stored in the low temperature no more than 5 DEG C；S5：The semiconductor devices semi-finished product that to store at low temperature thaw to being continuing with after more than 5 DEG C.The semiconductor devices semi-finished product of tin cream are coated with by preserving at low temperature, the scaling powder in tin cream can be avoided to volatilize, need not be limited to and subsequent technique is completed in 1 hour, even if run into subsequent process equipment failure, can also avoid wasting, greatly improve the flexibility of production, and the no longer production capacity of the coating equipment of limitation tin cream, can produce at full capacity to be operated, it is to avoid production capacity is wasted.
Description
Technical field
The present invention relates to the technical field of the production of semiconductor devices, more particularly to a kind of producer of semiconductor devices
Method.
Background technology
Semiconductor devices be electric conductivity between good conductor of electricity and insulator, using semi-conducting material specific electrical properties come
Complete the electronic device of specific function.It is including crystal diode, bipolar transistor and field-effect transistor etc..Semiconductor device
Then be covered in chip on tin cream by part in process of production, it is necessary to coated on the lead frames using tin cream, specifically, one
As by following steps：First the tin cream of freezen protective is thawed, the tin cream after defrosting is coated on the lead frames, by chip with
The form of paster is set on the lead frames, then by Reflow Soldering, ultimately forms finished product.In traditional production process, tin cream one
As coated on the lead frames by mode for dispensing glue, production efficiency is not high, and by tin cream printing by way of directly print
On the lead frames in hgher efficiency, therefore more and more used, and many flip-chips must use print solder paste
Mode it is more accurate control tin cream amount.Due to tin cream in itself the characteristics of, tin cream after application should be within 1 hour
Follow-up flow is completed, i.e., until completing Reflow Soldering, the otherwise scaling powder in tin cream can volatilize away, chip when producing Reflow Soldering
The problems such as stripping, solid not prison welding and excessive bubble, cause product rejection.Therefore, the high production rate meeting of the equipment of print solder paste
Very big pressure is caused to follow-up flow, in actual production process, usually because the equipment of welding chip and Reflow Soldering set
The features such as standby exception and relatively low total capability for load, semi-finished product are caused (to be printed with the lead frame of tin cream and be provided with core
The lead frame of piece) holdup time scraps more than a hour, causes significant wastage, and the equipment of print solder paste to expire
Production capacity is operated, and causes production capacity to waste.
The content of the invention
It is an object of the invention to propose a kind of production method of semiconductor devices, partly leading for tin cream is coated with by extension
The storage life of body device semi-finished product, it is to avoid finished semiconductor device is wasted, and greatly improves the flexibility of production.
It is that, up to this purpose, the present invention uses following technical scheme：
A kind of production method of semiconductor devices, it is characterised in that including：
S4：The semiconductor devices semi-finished product for being coated with tin cream are stored in the low temperature no more than 5 DEG C；
S5：The semiconductor devices semi-finished product that to store at low temperature thaw to being continuing with after more than 5 DEG C.
Wherein, include before step S4：
S1：Defrosting tin cream；
S2：Tin cream is set on the lead frames；
S3：Chip is set on the lead frames；
The semiconductor devices semi-finished product include being provided with the lead frame of tin cream and/or being provided with the lead frame of chip
Frame.
Wherein, being continuing with step S5 includes：Semiconductor devices semi-finished product after defrosting are carried out into reflow process.
Wherein, the tin cream is arranged on the lead frame by way of printing.
Wherein, semiconductor devices semi-finished product are stored between -18 DEG C to 5 DEG C.
Wherein, the half-finished semiconductor products thaw between 10 DEG C to 30 DEG C.
Wherein, in step S4, the semiconductor devices semi-finished product for being coated with tin cream are honored as a queen by vacuum-pumping density and store up at low temperature
Deposit.
Wherein, sealing is vacuumized to specifically include：The semiconductor devices semi-finished product for being coated with tin cream are placed in magazine, are put into sealing
In bag, vacuumize.
Wherein, the hermetic bag is aluminium foil bag or polybag.
Wherein, it is coated with during the semiconductor devices semi-finished product of tin cream are put into refrigerator and realizes low-temperature storage.
Beneficial effect：The invention provides a kind of production method of semiconductor devices, including：S4：It is coated with tin cream
Semiconductor devices semi-finished product are stored in the low temperature no more than 5 DEG C；S5：The semiconductor devices semi-finished product solution that will be stored at low temperature
Freeze to being continuing with after more than 5 DEG C.The semiconductor devices semi-finished product of tin cream are coated with by preserving at low temperature, tin can be avoided
Scaling powder volatilization in cream, it is not necessary to be limited to and subsequent technique is completed in 1 hour, even if running into subsequent process equipment event occurs
During barrier, it is also possible to avoid wasting, the flexibility of production, and the no longer production capacity of the coating equipment of limitation tin cream are greatly improved,
Can produce at full capacity to be operated, it is to avoid production capacity is wasted.
Brief description of the drawings
Fig. 1 is the production method of the semiconductor devices that the present invention is supplied.
Specific embodiment
For make present invention solves the technical problem that, the technical scheme that uses and the technique effect that reaches it is clearer, below
Technical scheme is further illustrated with reference to accompanying drawing and by specific embodiment.
The invention provides a kind of production method of semiconductor devices, it includes：
S1：Defrosting tin cream；
S2：Tin cream is set on the lead frames；
S3：Core wire piece on the lead frames；
S4：The semiconductor devices semi-finished product for being coated with tin cream are stored in the low temperature no more than 5 DEG C；
S5：The semiconductor devices semi-finished product that to store at low temperature thaw to being continuing with after more than 5 DEG C.
The present invention by way of the semiconductor devices semi-finished product low-temperature storage for being coated with tin cream, using tin cream in low temperature
The characteristics of lower solidification, the scaling powder in tin cream can be avoided from volatilizing, reach the purpose for keeping semi-finished product for a long time, it is only necessary to entering
Semi-finished product before row subsequent technique to low-temperature storage thaw, and are further continued for completing subsequent technique.By this kind of mode, Ke Yiyou
Effect ground extension storage life, it is not necessary to be limited to and subsequent technique is completed in 1 hour, in the equipment of subsequent technique, such as chip paster
When equipment and solder reflow device break down, semi-finished product can be preserved, it is to avoid waste.And for the high yield using print solder paste
Can be for mode, can also produce at full capacity the equipment that can operate print solder paste to the preservation of semi-finished product, and a large amount of semi-finished product after printing can
Stored with low temperature, it is not necessary to suppress the production capacity of printing equipment, it is to avoid production capacity is wasted.
Specifically, the lead frame that semiconductor devices semi-finished product are produced during being step S1-S3, that is, wrap
Include the lead frame after being provided with the lead frame of tin cream and welding chip.It can also be the band for preparing by other means
Have the semi-finished product of tin cream, if be above being provided with tin cream with the semi-finished product compared with short duration for, can use low
The mode thawed again extends the retention time of tin cream after temperature storage, so as to break through the limitation of short-term treatment, greatly improves
Flexibility in production process.Tin cream can be set on the lead frames by way of printing, be imitated with obtaining work higher
Rate, lowers its production finished product, and be easy to the thickness of control coating.The temperature general control of low-temperature storage is between -18 DEG C to 5 DEG C
It is proper, the tin cream in semi-finished product can be preferably preserved, the performance of the too low influence tin cream of temperature is avoided again.Low temperature storage is logical
Conventional cooling storage facilities is crossed, such as refrigerator cooling device is realized, now can typically controlled at -10 DEG C to 5 DEG C, drops
The power consumption of low refrigeration plant, reduces cost.Before being continuing with, typically by half-finished semiconductor products defrosting normal temperature, normal temperature is
Refer to room temperature, typically between 10 DEG C to 30 DEG C.
In the present invention, being continuing with step S5 includes：Semiconductor devices semi-finished product after defrosting are carried out into Reflow Soldering
Treatment, tin cream is melted so that chip and lead frame firmly weld together.
In step s 4, the semiconductor devices for being coated with tin cream is honored as a queen by vacuum-pumping density and store at low temperature.Extract true
When the mode stored again after sky sealing can be avoided in deepfreeze and thawed, vapor etc. is adsorbed on tin cream, influences tin cream
Quality, cause welding after product quality it is not good.Specifically, the mode for vacuumizing sealing can include：It is coated with tin cream
Semiconductor devices be placed in magazine, then will be put into hermetic bag, carry out vacuumize process.User is sealed by band
Just, low cost.Hermetic bag can be the hermetic bag commonly used for aluminium foil bag or polybag etc., low cost, it is also possible to using other
Hermetic bag, it is only necessary to can preferably seal.
Above content is only presently preferred embodiments of the present invention, for one of ordinary skill in the art, according to of the invention
Thought, will change in specific embodiments and applications, and this specification content should not be construed as to the present invention
Limitation.
Claims (10)
1. a kind of production method of semiconductor devices, it is characterised in that including：
S4：The semiconductor devices semi-finished product for being coated with tin cream are stored in the low temperature no more than 5 DEG C；
S5：The semiconductor devices semi-finished product that to store at low temperature thaw to being continuing with after more than 5 DEG C.
2. production method as claimed in claim 1, it is characterised in that include before step S4：
S1：Defrosting tin cream；
S2：Tin cream is set on the lead frames；
S3：Chip is set on the lead frames；
The semiconductor devices semi-finished product include being provided with the lead frame of tin cream and/or being provided with the lead frame of chip.
3. production method as claimed in claim 2, it is characterised in that being continuing with step S5 includes：After defrosting
Semiconductor devices semi-finished product carry out reflow process.
4. production method as claimed in claim 2, it is characterised in that the tin cream is arranged at described drawing by way of printing
On wire frame.
5. production method as claimed in claim 1, it is characterised in that semiconductor devices semi-finished product are stored up between -18 DEG C to 5 DEG C
Deposit.
6. production method as claimed in claim 1, it is characterised in that the half-finished semiconductor products thaw to 10 DEG C to 30 DEG C it
Between.
7. the production method as described in claim any one of 1-6, it is characterised in that in step S4, be coated with partly leading for tin cream
Body device semi-finished product are honored as a queen by vacuum-pumping density and store at low temperature.
8. production method as claimed in claim 7, it is characterised in that vacuumize sealing and specifically include：It is coated with the half of tin cream
Conductor device semi-finished product are placed in magazine, are put into hermetic bag, vacuumize.
9. production method as claimed in claim 8, it is characterised in that the hermetic bag is aluminium foil bag or polybag.
10. the production method as described in claim any one of 1-6, it is characterised in that be coated with the semiconductor devices half of tin cream
Finished product realizes low-temperature storage in being put into refrigerator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611039279.XA CN106783639B (en) | 2016-11-21 | 2016-11-21 | Method for producing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611039279.XA CN106783639B (en) | 2016-11-21 | 2016-11-21 | Method for producing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106783639A true CN106783639A (en) | 2017-05-31 |
| CN106783639B CN106783639B (en) | 2020-04-10 |
Family
ID=58973718
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611039279.XA Active CN106783639B (en) | 2016-11-21 | 2016-11-21 | Method for producing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106783639B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202344096U (en) * | 2011-12-02 | 2012-07-25 | 泰金宝光电(苏州)有限公司 | Solder paste temperature return box cabinet and temperature return box thereof |
| CN103801790A (en) * | 2012-11-12 | 2014-05-21 | 金宝电子（中国）有限公司 | Tin paste management system and tin paste management method |
| CN204303807U (en) * | 2014-12-04 | 2015-04-29 | 中山市川祺光电科技有限公司 | Paster LED lamp chip bonding die structure |
-
2016
- 2016-11-21 CN CN201611039279.XA patent/CN106783639B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202344096U (en) * | 2011-12-02 | 2012-07-25 | 泰金宝光电(苏州)有限公司 | Solder paste temperature return box cabinet and temperature return box thereof |
| CN103801790A (en) * | 2012-11-12 | 2014-05-21 | 金宝电子（中国）有限公司 | Tin paste management system and tin paste management method |
| CN204303807U (en) * | 2014-12-04 | 2015-04-29 | 中山市川祺光电科技有限公司 | Paster LED lamp chip bonding die structure |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106783639B (en) | 2020-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104106156B (en) | The manufacture method of thin-film package electrical equipment and manufacturing installation | |
| CN207397955U (en) | The external band temperature control dry-type capacitor device of resistance | |
| US2381025A (en) | Blocking-layer rectifier | |
| CN107433400A (en) | A kind of preformed solder for including scaling powder and preparation method thereof | |
| WO2005041319A3 (en) | Self assembly of conducting polymer for formation of polymer memory cell | |
| CN107210289A (en) | Semiconductor devices | |
| CN204315538U (en) | A kind of IC encapsulates load vacuum track | |
| CN103295918B (en) | A kind of preparation method of high-power field-effect transistor aluminium-gold bonding transition plate | |
| CN106783639A (en) | A kind of production method of semiconductor devices | |
| US20070123073A1 (en) | Semiconductor devices with conductive clips | |
| US20050227414A1 (en) | Packaging method for integrated circuits | |
| CN102522695A (en) | Nano silver soldering paste packaged 60-watt 808-nano high-power semiconductor laser module and packaging method thereof | |
| CN107316859A (en) | The diode package structure and manufacture method of a kind of horizontal tandem type of dual chip | |
| CN106783762B (en) | Diode packaging structure with double chips in vertical parallel connection mode and manufacturing method | |
| CN204067351U (en) | Dual chip packaging body | |
| CN206505909U (en) | A kind of diode encapsulating structure of the vertical parallel way of dual chip | |
| CN206210768U (en) | A kind of highly reliable surface-pasted diode | |
| US9543173B2 (en) | Decapsulator with applied voltage and etchant cooling system for etching plastic-encapsulated devices | |
| US20160148865A1 (en) | Electronic Circuit Board, Semiconductor Device Using the Same and Manufacturing Method for the Same | |
| CN107154389A (en) | The minitype paster solid-state relay and its manufacture method of a kind of high heat-sinking capability | |
| CN103295783A (en) | Method for manufacturing electrolytic capacitor | |
| CN105161435A (en) | PoP stack packaging technology capable of controlling ball height and avoiding ball drop | |
| JP5546972B2 (en) | Electronic device, bottom electrode type solid electrolytic capacitor and manufacturing method thereof | |
| CN104465586B (en) | A kind of wafer-level package structure and its process | |
| CN104538378A (en) | Wafer level package structure and technological method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |