CN106783639B - Method for producing semiconductor device - Google Patents
Method for producing semiconductor device Download PDFInfo
- Publication number
- CN106783639B CN106783639B CN201611039279.XA CN201611039279A CN106783639B CN 106783639 B CN106783639 B CN 106783639B CN 201611039279 A CN201611039279 A CN 201611039279A CN 106783639 B CN106783639 B CN 106783639B
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- semiconductor device
- solder paste
- finished product
- lead frame
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/03—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Die Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention discloses a method for producing a semiconductor device, which comprises the following steps: s4: storing the semi-finished product of the semiconductor device coated with the solder paste at a low temperature of not more than 5 ℃; s5: the semi-finished product of the semiconductor device stored at low temperature is thawed to be more than 5 ℃ and then is continuously used. By storing the semi-finished product of the semiconductor device coated with the solder paste at low temperature, the volatilization of the soldering flux in the solder paste can be avoided, the follow-up process is not required to be finished within 1 hour, the waste can be avoided even if the follow-up process equipment fails, the production flexibility is greatly improved, the capacity of the coating equipment of the solder paste is not limited any more, the operation of full capacity can be realized, and the waste of the capacity can be avoided.
Description
Technical Field
The invention relates to the technical field of production of semiconductor devices, in particular to a production method of a semiconductor device.
Background
A semiconductor device is an electronic device in which conductivity is interposed between a good conductor and an insulator, and a specific function is performed by utilizing special electrical characteristics of a semiconductor material. Including a transistor diode, a bipolar transistor, a field effect transistor, and the like. In the production process of a semiconductor device, a solder paste is required to be coated on a lead frame, and then a chip is covered on the solder paste, specifically, the following steps are generally performed: the method comprises the steps of unfreezing the solder paste which is frozen and stored, coating the unfrozen solder paste on a lead frame, arranging a chip on the lead frame in a patch mode, and performing reflow soldering to finally form a finished product. In traditional production process, the solder paste is generally coated on the lead frame in a dispensing mode, the production efficiency is not high, the efficiency of directly printing the solder paste on the lead frame in a printing mode is higher, more and more adoption is achieved, and a plurality of flip chips need to adopt the quantity of the solder paste which is controlled more accurately in the solder paste printing mode. Due to the characteristics of the solder paste, the subsequent process of the solder paste is required to be completed within 1 hour after the solder paste is coated, namely, the reflow soldering is completed, otherwise, the soldering flux in the solder paste volatilizes, and the problems of chip peeling, infirm soldering, too large bubbles and the like during the reflow soldering are generated, so that the product is scrapped. Therefore, the high productivity of the solder paste printing equipment can cause great pressure on the subsequent process, in the actual production process, the retention time of semi-finished products (namely, lead frames printed with solder paste and lead frames provided with chips) exceeds one hour and is scrapped due to the characteristics of abnormality of the chip welding equipment and reflow soldering equipment, low total load capacity and the like, so that great waste is caused, and the solder paste printing equipment cannot run at full production capacity, so that the capacity is wasted.
Disclosure of Invention
The invention aims to provide a production method of a semiconductor device, which avoids the waste of a semiconductor device finished product and greatly improves the production flexibility by prolonging the storage life of the semiconductor device semi-finished product coated with tin paste.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method of manufacturing a semiconductor device, comprising:
s4: storing the semi-finished product of the semiconductor device coated with the solder paste at a low temperature of not more than 5 ℃;
s5: the semi-finished product of the semiconductor device stored at low temperature is thawed to be more than 5 ℃ and then is continuously used.
Wherein, step S4 includes before:
s1: unfreezing the solder paste;
s2: arranging solder paste on the lead frame;
s3: arranging a chip on the lead frame;
the semi-finished product of the semiconductor device comprises a lead frame provided with solder paste and/or a lead frame provided with a chip.
Wherein the continued use in step S5 includes: and performing reflow soldering treatment on the unfrozen semi-finished product of the semiconductor device.
The solder paste is arranged on the lead frame in a printing mode.
Wherein the semi-finished semiconductor device is stored at a temperature of between-18 ℃ and 5 ℃.
Wherein the semi-finished semiconductor product is unfrozen to 10-30 ℃.
In step S4, the semi-finished semiconductor device coated with the solder paste is stored at a low temperature after being vacuum sealed.
Wherein, the evacuation is sealed specifically to include: and placing the semi-finished product of the semiconductor device coated with the solder paste into a material box, putting the semi-finished product into a sealing bag, and vacuumizing.
Wherein, the sealing bag is an aluminum foil bag or a plastic bag.
And placing the semi-finished product of the semiconductor device coated with the solder paste into a refrigerator to realize low-temperature storage.
Has the advantages that: the invention provides a method for producing a semiconductor device, which comprises the following steps: s4: storing the semi-finished product of the semiconductor device coated with the solder paste at a low temperature of not more than 5 ℃; s5: the semi-finished product of the semiconductor device stored at low temperature is thawed to be more than 5 ℃ and then is continuously used. By storing the semi-finished product of the semiconductor device coated with the solder paste at low temperature, the volatilization of the soldering flux in the solder paste can be avoided, the follow-up process is not required to be finished within 1 hour, the waste can be avoided even if the follow-up process equipment fails, the production flexibility is greatly improved, the capacity of the coating equipment of the solder paste is not limited any more, the operation of full capacity can be realized, and the waste of the capacity can be avoided.
Drawings
Fig. 1 is a method for producing a semiconductor device according to the present invention.
Detailed Description
In order to make the technical problems solved, the technical solutions adopted and the technical effects achieved by the present invention clearer, the technical solutions of the present invention are further described below by way of specific embodiments with reference to the accompanying drawings.
The present invention provides a method for producing a semiconductor device, which includes:
s1: unfreezing the solder paste;
s2: arranging solder paste on the lead frame;
s3: welding a chip on the lead frame;
s4: storing the semi-finished product of the semiconductor device coated with the solder paste at a low temperature of not more than 5 ℃;
s5: the semi-finished product of the semiconductor device stored at low temperature is thawed to be more than 5 ℃ and then is continuously used.
The semi-finished product of the semiconductor device coated with the solder paste is stored at low temperature, and the characteristic that the solder paste is solidified at low temperature is utilized, so that the volatilization of the soldering flux in the solder paste can be avoided, the aim of keeping the semi-finished product for a long time is fulfilled, and the semi-finished product stored at low temperature is unfrozen before the subsequent process is carried out, and then the subsequent process is continuously completed. By the mode, the storage period can be effectively prolonged, follow-up processes are not required to be finished within 1 hour, and semi-finished products can be stored when equipment of the follow-up processes, such as chip mounting equipment and reflow soldering equipment, breaks down, so that waste is avoided. And for the high-yield mode using the printing solder paste, the equipment capable of printing the solder paste can be operated at full yield for storing the semi-finished products, and a large amount of printed semi-finished products can be stored at low temperature without pressing the capacity of the printing equipment, so that the waste of the capacity is avoided.
Specifically, the semi-finished semiconductor device may be a lead frame produced during the steps S1-S3, that is, a lead frame including a lead frame provided with solder paste and a lead frame after bonding chips. The semi-finished product with the solder paste can be prepared by other methods, and as long as the semi-finished product with the solder paste arranged on the semi-finished product has short time limit, the method of unfreezing after low-temperature storage can be adopted to prolong the holding time of the solder paste, so that the limitation of short-term treatment is broken through, and the flexibility in the production process is greatly improved. The solder paste can be arranged on the lead frame in a printing mode so as to obtain higher working efficiency, reduce the production finished products and be convenient for controlling the coating thickness. The temperature of low-temperature storage is controlled between-18 ℃ and 5 ℃ more appropriately, so that the tin paste in the semi-finished product can be better preserved, and the influence of too low temperature on the performance of the tin paste can be avoided. The low-temperature storage is realized by common cooling storage equipment such as a refrigerator and the like, and the temperature can be controlled to be between 10 ℃ below zero and 5 ℃ generally, so that the power consumption of the refrigeration equipment is reduced, and the cost is reduced. Before the semi-finished product is used continuously, the semi-finished product is usually thawed at normal temperature, wherein the normal temperature refers to the room temperature and is generally between 10 ℃ and 30 ℃.
In the present invention, the continued use in step S5 includes: and performing reflow soldering treatment on the unfrozen semi-finished product of the semiconductor device, and melting the solder paste to firmly solder the chip and the lead frame together.
In step S4, the semiconductor device coated with the solder paste is stored at a low temperature after being vacuum-sealed. The mode of storing after vacuum pumping and sealing can avoid that water vapor and the like are adsorbed on the solder paste to influence the quality of the solder paste when the solder paste is refrigerated at low temperature and unfrozen, so that the quality of a welded product is poor. Specifically, the vacuum sealing manner may include: and placing the semiconductor device coated with the solder paste into a material box, and then placing the semiconductor device into a sealing bag for vacuumizing treatment. The sealing tape is convenient to use and low in cost. The sealing bag can be an aluminum foil bag or a common sealing bag such as a plastic bag and the like, the cost is low, other sealing bags can be used, and only the sealing bag needs to be better sealed.
The above description is only a preferred embodiment of the present invention, and for those skilled in the art, the present invention should not be limited by the description of the present invention, which should be interpreted as a limitation.
Claims (8)
1. A method of manufacturing a semiconductor device, comprising:
s1: unfreezing the solder paste;
s2: arranging solder paste on the lead frame;
s3: arranging a chip on the lead frame;
s4: the semi-finished product of the semiconductor device coated with the solder paste is stored at a low temperature of not more than 5 ℃ after being vacuumized and sealed;
s5: unfreezing the semi-finished product of the semiconductor device stored at low temperature to more than 5 ℃ and then continuously using the semi-finished product;
the semi-finished product of the semiconductor device comprises a lead frame provided with solder paste and/or a lead frame provided with a chip.
2. The method of claim 1, wherein the continued use in step S5 includes: and performing reflow soldering treatment on the unfrozen semi-finished product of the semiconductor device.
3. The method of manufacturing of claim 1, wherein the solder paste is disposed on the lead frame by printing.
4. The production method according to claim 1, wherein the semi-finished semiconductor device is stored at-18 ℃ to 5 ℃.
5. The production method as claimed in claim 1, wherein the semi-finished semiconductor product is thawed to between 10 ℃ and 30 ℃.
6. The method of claim 1, wherein the evacuating the seal body comprises: and placing the semi-finished product of the semiconductor device coated with the solder paste into a material box, putting the semi-finished product into a sealing bag, and vacuumizing.
7. The method of claim 6, wherein the sealed bag is an aluminum foil bag or a plastic bag.
8. The production method as claimed in any one of claims 1 to 5, wherein the semi-finished semiconductor device coated with the solder paste is placed in a refrigerator for low-temperature storage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611039279.XA CN106783639B (en) | 2016-11-21 | 2016-11-21 | Method for producing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611039279.XA CN106783639B (en) | 2016-11-21 | 2016-11-21 | Method for producing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106783639A CN106783639A (en) | 2017-05-31 |
| CN106783639B true CN106783639B (en) | 2020-04-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201611039279.XA Active CN106783639B (en) | 2016-11-21 | 2016-11-21 | Method for producing semiconductor device |
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| CN (1) | CN106783639B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202344096U (en) * | 2011-12-02 | 2012-07-25 | 泰金宝光电(苏州)有限公司 | Solder paste temperature return box cabinet and temperature return box thereof |
| CN103801790A (en) * | 2012-11-12 | 2014-05-21 | 金宝电子（中国）有限公司 | Tin paste management system and tin paste management method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204303807U (en) * | 2014-12-04 | 2015-04-29 | 中山市川祺光电科技有限公司 | Paster LED lamp chip bonding die structure |
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2016
- 2016-11-21 CN CN201611039279.XA patent/CN106783639B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202344096U (en) * | 2011-12-02 | 2012-07-25 | 泰金宝光电(苏州)有限公司 | Solder paste temperature return box cabinet and temperature return box thereof |
| CN103801790A (en) * | 2012-11-12 | 2014-05-21 | 金宝电子（中国）有限公司 | Tin paste management system and tin paste management method |
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| Publication number | Publication date |
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| CN106783639A (en) | 2017-05-31 |
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