CN106768386A - A kind of micro-metering bolometer thermal parameters test device and method - Google Patents

Abstract

The invention discloses a kind of micro-metering bolometer thermal parameters test device, including power supply, test circuit, data collecting card, PC, vacuum extractor；Test circuit includes two operational amplifiers, current-limiting resistance, four-wire measurement end, measuring resistance, electric capacity and variable connectors；Constant voltage source connects two inputs of operational amplifier respectively；First operational amplifier output terminal is connected with negative output terminal and is followed by current-limiting resistance, and it is high-end that current-limiting resistance connects four-wire measurement end first, the termination first switch high of four-wire measurement end second, and the second low side, the first low side connect second switch, the 3rd switch respectively；Between second operational amplifier negative input end and output end and couple measuring resistance and electric capacity, one end of measuring resistance and electric capacity connects the first low side, and the other end connects the 4th switch；Four switch in parallel access data collecting card, and PC is connect through USB；The method of testing of thermal parameters includes setting relevant voltage, resistance, vacuumizes, sampling and outputting voltage value to PC, and thermal response parameter is calculated with reference to thermal response curve.

Description

A kind of micro-metering bolometer thermal parameters test device and method

Technical field

The invention belongs to photoelectron technology and test and measuring technical field, particularly a kind of micro-metering bolometer thermal parameters Test device and method.

Background technology

Infrared imagery technique is a kind of technology for reflecting body surface heat radiation and its internal heat dissipation information, at present It is widely used in dual-use field, it is that vision of the people outside visible light wave segment limit extends, and it extends the mankind Obtain the ability of objective world information.And an important research field of infrared imagery technique is exactly non-refrigeration type Infrared Detectors The research of (micro-metering bolometer).

Micro-metering bolometer is mainly responsible for for sightless infra-red radiation being converted into visual electric signal, is by rear end System signal transacting can just treat survey target and is imaged.Micro-metering bolometer as thermal infrared imager critical component, its property Energy parameter also determines the service behaviour of thermal infrared imager.Wherein thermal response parameter is one important indicator of micro-metering bolometer. Thermal response parameter specifically includes the performance parameters such as thermal response time τ, thermal capacitance C and thermal conductivity g again.Wherein thermal response time τ is embodied Reaction speed of the micro-metering bolometer to outside thermal excitation.Thermal conductivity g characterizes the speed degree of micro-metering bolometer heat transfer. Thermal capacitance C absorbs the temperature rise that joule's heat energy brings from macroscopically exactly sensitive pixel.Relation between this three is τ=C/g, is passed through The thermal response time τ and thermal conductivity g that test obtains micro-metering bolometer just can draw corresponding thermal capacitance value C according to this relation.It is micro- The test of bolometer thermal response parameter improves image quality for the design of optimization panel detector structure and assessment detector performance With highly important reference role.

Micro-metering bolometer is a kind of resistance device, and it is to cause its change in resistance to be realized using extraneous infra-red radiation Imaging function.The test of thermal parameters is also to apply a quantitative thermal excitation to it, by test its change in resistance characteristic come Obtain thermal parameters.Therefore the thermal parameters test of micro-metering bolometer is substantially resistance measurement.Surveyed currently used for resistance The method of amount mainly has multimeter measure method, four-wire system constant flow method, constant pressure method of testing and big impulse current measurement method etc..General-purpose Table mensuration is measured using two-wire system, and measured resistance is connected with test lead, p-wire electricity when measured resistance is smaller Resistance and contact resistance can not be ignored, and can otherwise bring larger measurement error；Four-wire system constant flow method can exclude test and lead The influence of line resistance and contact resistance to measurement result, but certainty of measurement depends on the stability of constant-current source, particularly high resistant Required test electric current very little, is influenceed to be difficult keeping temperature by variation of ambient temperature during value measurement, is only suitable in this way Resistance to low resistance and middle resistance carries out high-acruracy survey.Constant pressure method of testing can produce very big electricity when small resistor is measured Stream, causes measured resistance self-heating to cause change in resistance and reduce measuring accuracy, so being not suitable for the measurement of low resistance；Big arteries and veins Rushing amperometric can control to flow through the average current of measured resistance, the problem for reducing measured resistance self-heating and causing, But pulsating current during due to the electric current for flowing through measured device, this method is suitable only for the measurement of pure resistance, be not suitable for sense The test of property device.In addition, resistance is typically measured by the way of direct current signal is applied, and can not in DC channel The presence that avoids is lacked of proper care, and the imbalance is quite sensitive to environment temperature, in order to improve certainty of measurement can only use it is expensive Device or using complicated temperature-compensating measure.

The content of the invention

Technical problem solved by the invention is to provide a kind of high precision and large measuring range micro-metering bolometer thermal parameters to survey Examination device and method.

The technical solution for realizing the object of the invention is：

A kind of micro-metering bolometer thermal parameters test device, including constant voltage source, test circuit, data collecting card, PC Machine, vacuum extractor；The test circuit includes the first operational amplifier A, the second operational amplifier B, current-limiting resistance R₀, four lines Measurement end, measuring resistance R_S, electric capacity C_SWith variable connector K；The variable connector K includes first switch A in parallel₀, second switch A₁, the 3rd switch A₂With the 4th switch A₃；

The constant voltage source is respectively connected to the input and the second amplifier B of the first operational amplifier A of test circuit Input；The positive input terminal of first operational amplifier A accesses bias voltage V_bias, output end is connected with negative input end and is followed by To current-limiting resistance R₀, current-limiting resistance R₀Another the first high-end HD for terminating to four-wire measurement end, the second of four-wire measurement end be high-end The first switch A of HS and variable connector K₀Be connected, the second low side LS, the first low side LD respectively with the second switch of variable connector K A₁, the 3rd switch A₂It is connected；The positive input terminal of the second operational amplifier B accesses reference voltage V_ref, negative input end and output Measuring resistance Rs and electric capacity C is connected in parallel between end_S, measuring resistance R_SWith electric capacity C_SOne end be connected with the first low side LD, separately One end switchs A with the 4th of variable connector K₃End is connected；Output end after four switch in parallel of the variable connector K is accessed Data collecting card, data collecting card accesses PC by USB port；Micro-metering bolometer to be measured is connected across the height at four-wire measurement end Two ends, and be connected with vacuum extractor.

Micro-metering bolometer thermal parameters method of testing based on micro-metering bolometer thermal parameters test device, including with Lower step：

Step 1, the normal temperature resistance R of rough measure micro-metering bolometer is carried out first by Portable voltage table_X, according to this Resistance sets bias voltage V_bias, reference voltage V_ref, measuring resistance R_S；

Step 2, accesses micro-metering bolometer, opens vavuum pump, and vacuumize process is carried out to micro-metering bolometer；

Step 3, opens constant-voltage source, V of the data collecting card to test circuit_X1, V_X2, V_S1And V_S24 voltages are carried out Collection, and conversion is output as V respectively_D1, V_D2, V_D3And V_D4；Wherein V_X1It is the high-end HS voltages in four-wire measurement end second, V_X2It is four lines Measurement end the second low side LS voltages, V_S1It is the lower terminal voltage of four-wire measurement end first, V_S2It is the output end of the second operational amplifier B Voltage；V_D1, V_D2, V_D3And V_D4The V of test circuit is corresponded to respectively_X1, V_X2, V_S1And V_S2Sampling and outputting voltage value；

Step 4, PC display test circuit are through the sampling and outputting voltage value V after data collecting card conversion_D1, V_D2, V_D3With V_D4；

Step 5, with reference to thermal response curve calculate thermal response parameter：

Step 5-1. is according to obtaining sampling and outputting voltage value V_D1, V_D2, according to V_D1-V_D2Value be fitted bolometer heat Response curve；

Step 5-2. calculates micro-metering bolometer thermal conductivity g according to thermal response curve；

Step 5-3. calculates thermal response time τ；

Step 5-4. calculates micro-metering bolometer thermal capacitance C；

Step 6, test is completed, and closes each device.

The present invention compared with prior art, its remarkable advantage：

(1) micro-metering bolometer thermal parameters test device simple structure of the invention, easily operation；

(2) test parameter is not influenceed by circuit imbalance and variation of ambient temperature；

(3) micro-metering bolometer thermal parameters test device of the invention can reduce tested micro-metering bolometer resistance certainly Body heating problem, improves certainty of measurement；

(4) micro-metering bolometer thermal parameters test device circuit board of the invention uses modularized design, can be according to need Plug micro-metering bolometer to be measured and measuring resistance so that testing range is big.

The present invention is described in further detail below in conjunction with the accompanying drawings.

Brief description of the drawings

Fig. 1 is micro-metering bolometer thermal parameters test device schematic diagram of the present invention.

Fig. 2 is micro-metering bolometer thermal parameters test circuit schematic diagram of the present invention.

Fig. 3 is the thermal response curve figure of micro-metering bolometer of the present invention.

Fig. 4 is the basic structure schematic diagram of micro-metering bolometer.

Specific embodiment

With reference to Fig. 1 and Fig. 2, a kind of micro-metering bolometer thermal parameters test device of the invention, including constant voltage source, survey Examination circuit, data collecting card, PC, vacuum extractor；The test circuit includes that the first operational amplifier A, the second computing are put Big device B, current-limiting resistance R₀, four-wire measurement end, measuring resistance Rs, electric capacity C_SWith variable connector K；

The constant voltage source is respectively connected to the input and the second operational amplifier of the first operational amplifier A of test circuit The input of B, for the first operational amplifier A provides bias voltage V_biasReference voltage V is provided with the second operational amplifier B_ref； The positive input terminal of first operational amplifier A accesses bias voltage V_bias, output end be connected with negative input end composition voltage with With device, for the impedance of match circuit；The output end of first operational amplifier A is connected with negative output terminal and is followed by current limliting electricity Resistance R₀, current-limiting resistance R₀Reduce loop current to reduce the Joule heat of testing sample, prevent testing sample from crossing cause thermal damage；

The variable connector K includes first switch A in parallel₀, second switch A₁, the 3rd switch A₂With the 4th switch A₃, work A switch is only opened when making every time；The current-limiting resistance R₀Another the first high-end HD for terminating to four-wire measurement end, four lines The first switch A of the second high-end HS and variable connector K of measurement end₀Be connected, the second low side LS, the first low side LD respectively with multichannel Switch the second switch A of K₁, the 3rd switch A₂It is connected；The positive input terminal of the second operational amplifier B accesses reference voltage V_ref, Reference voltage V_refConverted by voltage conversion chip, can generally be realized with ADR421 chips；Connected by negative voltage feedback Connect, the positive input terminal reference voltage V of the second operational amplifier B_refCan be because empty short phenomenon be transferred to negative input end, so as to pass through Wire is carried in micro-metering bolometer and is connected to the first low side of four-wire measurement LD；

Measuring resistance R is connected in parallel between the second operational amplifier B negative input ends and output end_SWith electric capacity C_S, standard Resistance Rs and electric capacity C_SOne end be connected with the first low side LD, measuring resistance Rs and electric capacity C_SThe other end is with variable connector K's 4th switch A₃End is connected；Output end after four switch in parallel of the variable connector K accesses data collecting card, data acquisition Card accesses PC by USB port, and test data is shown and preserved by PC；Micro-metering bolometer to be measured is connected across four The height two ends of line measurement end, and be connected with vacuum extractor.

With reference to Fig. 4, micro-metering bolometer includes sensitive pixel B1, supporting leg B2 and substrate B3.Substrate B3 is located at micrometering spoke The bottom of heat meter is penetrated, sensitive pixel B1 is located at the top of micro-metering bolometer, by support between substrate B3 and sensitive pixel B1 Leg B2 is connected；

The vacuum extractor includes vavuum pump, vacuum meter, sealing device, and the micro-metering bolometer passes through sealing device Sealing, sealing device connects vavuum pump, vacuum meter by three-way connection；The sealing device is Can structure.Due to sky Gas thermal conductivity is than larger, it is easy to so that the infra-red radiation heat received on micro-metering bolometer is lost in, be unfavorable for realizing that it is imaged Function, therefore vacuumized come the micro-metering bolometer encapsulated to Can using vavuum pump；Vacuum meter can be in real time to true simultaneously Reciprocal of duty cycle is shown.

As the further improvement to above-mentioned implementation method, it is also covered with outside the metal tube of the vacuum extractor Blind plate, to prevent outside infra-red radiation from producing interference to experiment.

Used as preferred embodiment, the first operational amplifier A and the second operational amplifier B select low noise, low temperature Drift and can rail-to-rail output voltage swing device；First operational amplifier A uses single supply power supply device, model AD8629 Chip；The second operational amplifier B uses dual power supply device, model OP07 chips.

The method of testing of the micro-metering bolometer thermal parameters based on micro-metering bolometer thermal parameters test device includes：

Step 1, the normal temperature resistance R of rough measure micro-metering bolometer is carried out first by Portable voltage table_X, according to this Resistance sets bias voltage V_bias, reference voltage V_ref, measuring resistance R_S；

During specific implementation, as micro-metering bolometer normal temperature resistance R_XIn 30K Ω -100K Ω scopes, measuring resistance R_SValue Scope is 30K Ω -100K Ω.Current-limiting resistance R₀Take 10K Ω, reference voltage V_ref2.5V is taken, then bias voltage V_biasSpan It is 3V-2.6V.

Step 2, accesses micro-metering bolometer, opens vavuum pump, and vacuumize process is carried out to micro-metering bolometer；

Vacuum level requirements are less than 0.1mBar, and now influence of the air thermal conductivity to micro-metering bolometer is smaller.

Step 3, opens constant-voltage source, V of the data collecting card to test circuit_X1, V_X2, V_S1And V_S24 voltages are carried out Collection, and conversion is output as V respectively_D1, V_D2, V_D3And V_D4；Wherein V_X1It is the high-end HS voltages in four-wire measurement end second, V_X2It is four lines Measurement end the second low side LS voltages, V_S1It is the lower terminal voltage of four-wire measurement end first, V_S2It is the output end of the second operational amplifier B Voltage；V_D1, V_D2, V_D3And V_D4The V of test circuit is corresponded to respectively_X1, V_X2, V_S1And V_S2Sampling and outputting voltage value；

Step 4, PC display test circuit are through the sampling and outputting voltage value V after data collecting card conversion_D1, V_D2, V_D3With V_D4；

Step 5, with reference to thermal response curve calculate thermal response parameter：

Step 5-1. is according to obtaining sampling and outputting voltage value V_D1, V_D2, according to V_D1-V_D2Value be fitted bolometer heat Response curve；

With reference to Fig. 3, V is the steady state voltage of micro-metering bolometer, and steady state voltage V represents micro-metering bolometer thermal response process Into voltage during stable state, voltage when micro-metering bolometer thermal response curve tends to flat is shown as；V_τIt is microbolometer heat Meter thermal response voltage, the i.e. magnitude of voltage of micro-metering bolometer thermal response finish time；V_SIt is micro-metering bolometer initial voltage, i.e., Micro-metering bolometer thermal response process initial time t₁Voltage.t₁Represent micro-metering bolometer thermal response initial time, t₂Represent Micro-metering bolometer thermal response finish time；Abscissa unit is the second, and ordinate unit is volt；

Step 5-2. calculates micro-metering bolometer thermal conductivity g according to thermal response curve：

Micro-metering bolometer thermal response calculation method of parameters is with equation of heat balance as theoretical foundation, in microbolometer heat Micro-metering bolometer equation of heat balance is when meter sensitivity pixel B1 temperature is T

Wherein C is micro-metering bolometer thermal capacitance, I_XTo flow through the bias current of micro-metering bolometer, U_X+It is microbolometer heat Meter two ends bias voltage；I_XU_X+It is the Joule heat that bias current causes, ε_eP_tIt is imageable target radiant heat, ε_eP_sIt is microbolometer Heat meter substrate B3 radiant heat, T_sIt is the temperature of micro-metering bolometer substrate B3, g (T-T_s) it is micro-metering bolometer sensitivity pixel B1 To the conduction heat of substrate B3, (2A) ε_eσT⁴It is the external radiant heat of micro-metering bolometer of Si Tepan laws decision, g is microbolometer Heat meter thermal conductivity, and have g=g_rad+g_leg+g_amb, wherein g_legIt is thermal conductivity of the micro-metering bolometer by supporting leg B2 heat transfers, g_rad It is the thermal conductivity of the micro-metering bolometer sensitivity pixel external heat radiations of B1, g_ambIt is to be caused by micro-metering bolometer pixel ambient gas Convection current and conduction, in the encapsulating package of condition of high vacuum degree, g_ambCan ignore；

According to equation of heat balance (1) Shi Ke get

In the case of without target heat radiation, the hot ε of target emanation_eP_t=0, with micro-metering bolometer bias current I_XCause Joule heat is compared, micro-metering bolometer substrate B3 radiant heat ε_eP_sWith micro-metering bolometer external radiant heat (2A) ε_eσT⁴Can neglect Slightly disregard, now have

Now micro-metering bolometer thermal conductivity g is equal to the thermal conductivity g of micro-metering bolometer supporting leg B2_leg, biased electrical is represented with Q Stream I_XThe Joule heat for causing, by U_X+=I_X·R_X, then Joule heatR_XRepresent resistance under micro-metering bolometer normal temperature；

T represents bias current action time, works as t<When 0, Q=0, when t >=0, can be solved by formula (3)

Wherein τ is micro-metering bolometer thermal response time.After the temperature of micro-metering bolometer reaches stable state, i.e., partially When putting function of current time t ＞ ＞ τ, now had according to formula (4)

Micro-metering bolometer steady state voltage V and bias current I_XIt is divided by and can be obtained by micro-metering bolometer steadying resistance R (T), i.e. R (T)=V/I_X；Steadying resistance R (T) represents resistance of the micro-metering bolometer when thermal response process tends to stable state.It is micro- The initial voltage V of bolometer_SWith bias current I_XIt is divided by and can be obtained by the initial resistance R (T of micro-metering bolometer_s), i.e., R(T_s)=V_S/I_X；Micro-metering bolometer initial resistance R (T_s) represent thermal response process initial time t₁Resistance；Microbolometer heat Meter steadying resistance R (T) and initial resistance R (T_s) relation as shown in (6) formula

R (T)=R (T_s)[1+α(T-T_s)] (6)

Wherein α is the temperature-coefficient of electrical resistance of micro-metering bolometer.For a certain certain material, temperature-coefficient of electrical resistance α is Know；(6) formula is brought into (5) formula can obtain

According to micro-metering bolometer thermal response curve, the initial voltage V of micro-metering bolometer can be obtained_SAnd steady state voltage V；Therefore according to formula (7) can in the hope of thermal conductivity g be：

Step 5-3. calculates thermal response time τ：

According to (4) formula, t=τ and t=∞ are made respectively, can obtain micro-metering bolometer thermal response finish time temperature value T (τ) and the ratio in stable state moment temperature value T (∞), i.e.,：

With reference to micro-metering bolometer thermal response curve, micro-metering bolometer thermal response finish time voltage is thermal response voltage V_τIt is identical with the ratio of formula (9) with the ratio of steady state voltage V, i.e.,：

Because micro-metering bolometer steady state voltage V can directly observation draws by micro-metering bolometer thermal response curve, then Micro-metering bolometer thermal response voltage V can be tried to achieve according to formula (10)_τ, you can V is obtained from thermal response curve_τCorresponding thermal response Finish time t₂；

Micro-metering bolometer thermal response time τ is so as to micro-metering bolometer thermal response initial time t₁To thermal response knot Beam moment t₂Between time interval, i.e. τ=t₂-t₁。

Step 5-4. calculates micro-metering bolometer thermal capacitance C：

After micro-metering bolometer thermal conductivity g and thermal response time τ is obtained, micro-metering bolometer can be calculated by formula τ=C/g Thermal capacitance value C：

Step 6, test is completed, and closes each device：

Test continues 2s or so and first closes data collecting card, can so ensure the integrality of thermal response curve；Turn off Constant voltage source, is then switched off vavuum pump and vacuum meter.

Because the first operational amplifier A and the second operational amplifier B work in negative-feedback structure for amplifying, therefore the first fortune The negative input end and output end voltage value for calculating amplifier are V_bias, the second operational amplifier negative input end voltage is V_ref.Therefore flow Cross the electric current I of micro-metering bolometer_X=(V_bias-V_ref)/(R₀+R_X).Again because the second operational amplifier B positive-negative input ends are empty It is disconnected, therefore flow through micro-metering bolometer resistance R to be measured_XSize of current I_s≈I_X.Following formula can now be obtained：

Micro-metering bolometer resistance R_xThe forward bias voltage at two ends：U_X+=V_X1-V_X2=I_X×R_X (1)

Micro-metering bolometer resistance R_xThe reverse bias voltage at two ends：U_X-=V_X2-V_X1=-I_X×R_X (2)

Measuring resistance R_sThe forward voltage at two ends：U_S+=V_S1-V_S2=I_X×R_S (3)

Measuring resistance R_sThe backward voltage at two ends：U_S-=V_S2-V_S1=-I_X×R_S (4)

Sampling and outputting voltage value V after capture card conversion_D1, V_D2, V_D3And V_D4It is expressed as：

Wherein K₁~K₄The respectively corresponding first switch A of measurement variable connector K₀To the 4th switch A₃Four paths electricity The overall gain of whole Measurement channel during pressure sampled output signal.Because four times measurement signal is processed by same Measurement channel, It can be considered that K₁~K₄It is equal.△V₁~△ V₄It is the corresponding four paths voltage sample output signals of measurement variable connector K When whole Measurement channel total imbalance.Similarly, their also approximately equals during measurement.V_r1~V_r4Respectively measurement variable connector K Correspondence first switch A₀To the 4th switch A₃Four paths voltage sample output signals when be respectively supplied to analog-to-digital conversion module Reference voltage, because four road signals are processed by same analog-to-digital conversion module, therefore V_r1~V_r4It is equal.

Formula (5) is subtracted into formula (6), formula (7) subtracts formula (8), can respectively obtain：

The resistance R of micro-metering bolometer can be obtained in conjunction with formula (1) and formula (3)_XSize is：

From formula (11) as can be seen that micro-metering bolometer resistance R to be measured_XTest value only and four sampling and outputting voltage values V_D1~V_D4And measuring resistance R_SIt is relevant, it is unrelated with other circuit parameters.Therefore the test system can eliminate circuit gain and The influence that circuit is lacked of proper care to sampling precision, improves the degree of accuracy of experimental result.Micro-metering bolometer resistance and data acquisition simultaneously The output voltage precision and current-limiting resistance R of card₀It is unrelated, it is possible to using less test electric current come test resistance, to reduce Measured resistance self-heating problem, improves certainty of measurement.

Claims (9)

1. a kind of micro-metering bolometer thermal parameters test device, it is characterised in that adopted including constant voltage source, test circuit, data Truck, PC, vacuum extractor；The test circuit includes the first operational amplifier A, the second operational amplifier B, current-limiting resistance R₀, four-wire measurement end, measuring resistance R_S, electric capacity C_SWith variable connector K；The variable connector K includes first switch A in parallel₀、 Second switch A₁, the 3rd switch A₂With the 4th switch A₃；

The constant voltage source is respectively connected to the input of the input and the second amplifier B of the first operational amplifier A of test circuit End；The positive input terminal of first operational amplifier A accesses bias voltage V_bias, output end is connected with negative input end and is followed by limit Leakage resistance R₀, current-limiting resistance R₀Another the first high-end HD for terminating to four-wire measurement end, the second high-end HS at four-wire measurement end with The first switch A of variable connector K₀Be connected, the second low side LS, the first low side LD respectively with the second switch A of variable connector K₁, Three switch A₂It is connected；The positive input terminal of the second operational amplifier B accesses reference voltage V_ref, negative input end and output end it Between be connected in parallel measuring resistance Rs and electric capacity C_S, measuring resistance R_SWith electric capacity C_SOne end be connected with the first low side LD, the other end With variable connector K the 4th switchs A₃End is connected；Output end after four switch in parallel of the variable connector K accesses data Capture card, data collecting card accesses PC by USB port；Micro-metering bolometer to be measured is connected across the height two at four-wire measurement end End, and be connected with vacuum extractor.

2. micro-metering bolometer thermal parameters test device according to claim 1, it is characterised in that：First computing Amplifier A uses single supply power supply device, the second operational amplifier B to use dual power supply device.

3. micro-metering bolometer thermal parameters test device according to claim 1, it is characterised in that：The vacuum means Put including vavuum pump, vacuum meter, sealing device, the micro-metering bolometer is sealed by sealing device, and sealing device passes through three Pass joint connection vavuum pump, vacuum meter.

4. the micro-metering bolometer thermal parameters test device according to claim 1 or 3, it is characterised in that described to take out true The outside of empty device is also covered with blind plate.

5. a kind of micro-metering bolometer thermal parameters of micro-metering bolometer thermal parameters test device based on claim 1 are surveyed Method for testing, comprises the following steps：

Step 1, the normal temperature resistance R of rough measure micro-metering bolometer is carried out first by Portable voltage table_X, according to the resistance Bias voltage V is set_bias, reference voltage V_ref, measuring resistance R_S；

Step 2, accesses micro-metering bolometer, opens vavuum pump, and vacuumize process is carried out to micro-metering bolometer；

Step 3, opens constant-voltage source, V of the data collecting card to test circuit_X1, V_X2, V_S1And V_S24 voltages are acquired, And conversion is output as V respectively_D1, V_D2, V_D3And V_D4；Wherein V_X1It is the high-end HS voltages in four-wire measurement end second, V_X2It is four-wire measurement Hold the second low side LS voltages, V_S1It is the lower terminal voltage of four-wire measurement end first, V_S2It is the output end voltage of the second operational amplifier B； V_D1, V_D2, V_D3And V_D4The V of test circuit is corresponded to respectively_X1, V_X2, V_S1And V_S2Sampling and outputting voltage value；

Step 4, PC display test circuit are through the sampling and outputting voltage value V after data collecting card conversion_D1, V_D2, V_D3And V_D4；

Step 5, with reference to thermal response curve calculate thermal response parameter：

Step 5-1. is according to obtaining sampling and outputting voltage value V_D1, V_D2, according to V_D1-V_D2Value be fitted bolometer thermal response Curve；

Step 5-2. calculates micro-metering bolometer thermal conductivity g according to thermal response curve；

Step 5-3. calculates thermal response time τ；

Step 5-4. calculates micro-metering bolometer thermal capacitance C；

Step 6, test is completed, and closes each device.

6. the method for testing of micro-metering bolometer thermal parameters according to claim 5, it is characterised in that to microbolometer The vacuum level requirements that heat meter carries out vacuumize process are less than 0.1mBar.

7. the method for testing of micro-metering bolometer thermal parameters according to claim 5, it is characterised in that the calculating is micro- Bolometer thermal conductivity g detailed processes are：

Micro-metering bolometer thermal response calculation method of parameters be with equation of heat balance as theoretical foundation, it is quick in micro-metering bolometer Micro-metering bolometer equation of heat balance is when sense pixel B1 temperature is T

$C\frac{dT}{dt}=I_X{U}_{X+}+{\mathrm{\&epsiv;}}_e{P}_t+{\mathrm{\&epsiv;}}_e{P}_s-g(T-T_s)-\left(2A\right){\mathrm{\&epsiv;}}_e{\mathrm{\&sigma;T}}^4---\left(1\right)$

Wherein C is micro-metering bolometer thermal capacitance, I_XTo flow through the bias current of micro-metering bolometer, U_X+It is micro-metering bolometer two End bias voltage；I_XU_X+It is the Joule heat that bias current causes, ε_eP_tIt is imageable target radiant heat, ε_eP_sIt is micro-metering bolometer Substrate B3 radiant heat, T_sIt is the temperature of micro-metering bolometer substrate B3, g (T-T_s) it is micro-metering bolometer sensitivity pixel B1 to base The conduction heat of bottom B3, (2A) ε_eσT⁴It is the external radiant heat of micro-metering bolometer of Si Tepan laws decision, g is micro-metering bolometer Thermal conductivity, and have g=g_rad+g_leg+g_amb, wherein g_legIt is thermal conductivity of the micro-metering bolometer by supporting leg B2 heat transfers, g_radFor micro- The thermal conductivity of the bolometer sensitivity pixel external heat radiations of B1, g_ambBe by micro-metering bolometer pixel ambient gas cause it is right Stream and conduction, in the encapsulating package of condition of high vacuum degree, g_ambCan ignore；

According to equation of heat balance (1) Shi Ke get

$g=\frac{I_X{U}_{X+}+{\mathrm{\&epsiv;}}_e{P}_t+{\mathrm{\&epsiv;}}_{e}P-\left(2A\right){\mathrm{\&epsiv;}}_e{\mathrm{\&sigma;T}}^4-C\frac{dT}{dt}}{T-T_s}---\left(2\right)$

In the case of without target heat radiation, the hot ε of target emanation_eP_t=0, with micro-metering bolometer bias current I_XThe joule for causing Heat is compared, micro-metering bolometer substrate B3 radiant heat ε_eP_sWith micro-metering bolometer external radiant heat (2A) ε_eσT⁴Can ignore not Meter, now has

$g=\frac{I_X{U}_{X+}-C\frac{dT}{dt}}{T-T_s}---\left(3\right)$

Now micro-metering bolometer thermal conductivity g is equal to the thermal conductivity g of micro-metering bolometer supporting leg B2_leg, bias current I is represented with Q_XDraw The Joule heat for rising, by U_X+=I_X·R_X, then Joule heatR_XRepresent resistance under micro-metering bolometer normal temperature；

T represents bias current action time, works as t<When 0, Q=0, when t >=0, can be solved by formula (3)

$T=T_s+\frac{Q}{g}(1-e^{-t/\mathrm{\&tau;}})---\left(4\right)$

Wherein τ is micro-metering bolometer thermal response time；After the temperature of micro-metering bolometer reaches stable state, i.e. biased electrical During stream action time t ＞ ＞ τ, now had according to formula (4)

$T=T_s+\frac{Q}{g}---\left(5\right)$

Micro-metering bolometer steady state voltage V and bias current I_XIt is divided by and can be obtained by micro-metering bolometer steadying resistance R (T), i.e., R (T)=V/I_X；Steadying resistance R (T) represents resistance of the micro-metering bolometer when thermal response process tends to stable state；Microbolometer The initial voltage V of heat meter_SWith bias current I_XIt is divided by and can be obtained by the initial resistance R (T of micro-metering bolometer_s), i.e. R (T_s) =V_S/I_X；Micro-metering bolometer initial resistance R (T_s) represent thermal response process initial time t₁Resistance；Micro-metering bolometer is steady State resistance R (T) and initial resistance R (T_s) relation as shown in (6) formula

R (T)=R (T_s)[1+α(T-T_s)] (6)

Wherein α is the temperature-coefficient of electrical resistance of micro-metering bolometer；For a certain certain material, temperature-coefficient of electrical resistance α is known； (6) formula is brought into (5) formula can obtain

$\frac{\frac{R\left(T\right)}{R\left(T_s\right)}-1}{\mathrm{\&alpha;}}=\frac{Q}{g}---\left(7\right)$

According to micro-metering bolometer thermal response curve, the initial voltage V of micro-metering bolometer can be obtained_SWith steady state voltage V；Cause This according to formula (7) can in the hope of thermal conductivity g be：

$g=\frac{\mathrm{\&alpha;}\&CenterDot;I_X^2\&CenterDot;R_X}{\frac{V}{V_S}-1}---\left(8\right).$

8. the method for testing of the micro-metering bolometer thermal parameters according to claim 5 or 7, it is characterised in that the calculating Thermal response time τ detailed processes are：According to (4) formula, t=τ and t=∞ are made respectively, can obtain micro-metering bolometer thermal response Finish time temperature value T (τ) and the ratio in stable state moment temperature value T (∞), i.e.,：

$\frac{T\left(\mathrm{\&tau;}\right)}{T\left(\mathrm{\&infin;}\right)}=\frac{\frac{Q}{g}(1-e^{-1})}{\frac{Q}{g}}\&ap;0.632---\left(9\right)$

With reference to micro-metering bolometer thermal response curve, micro-metering bolometer thermal response finish time voltage is thermal response voltage V_τWith The ratio of steady state voltage V is identical with the ratio of formula (9), i.e.,：

$\frac{V_{\mathrm{\&tau;}}}{V}=0.632---\left(10\right)$

Because micro-metering bolometer steady state voltage V can directly observation draws by micro-metering bolometer thermal response curve, further according to Formula (10) can try to achieve micro-metering bolometer thermal response voltage V_τ, you can V is obtained from thermal response curve_τCorresponding thermal response terminates Moment t₂；

Micro-metering bolometer thermal response time τ is so as to micro-metering bolometer thermal response initial time t₁At the end of thermal response Carve t₂Between time interval, i.e. τ=t₂-t₁。

9. the method for testing of the micro-metering bolometer thermal parameters according to claim 5 or 7, it is characterised in that the calculating Micro-metering bolometer thermal capacitance C detailed processes are：

After micro-metering bolometer thermal conductivity g and thermal response time τ is obtained, micro-metering bolometer thermal capacitance can be calculated by formula τ=C/g Value C：

$C=\frac{\mathrm{\&alpha;}\&CenterDot;I_X^2\&CenterDot;R_X}{\frac{V}{V_S}-1}\&times;(t_2-t_1)---\left(11\right).$