CN113589129A - Measuring device and measuring method for C-V curve of avalanche photodiode - Google Patents
Measuring device and measuring method for C-V curve of avalanche photodiode Download PDFInfo
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- CN113589129A CN113589129A CN202110946871.2A CN202110946871A CN113589129A CN 113589129 A CN113589129 A CN 113589129A CN 202110946871 A CN202110946871 A CN 202110946871A CN 113589129 A CN113589129 A CN 113589129A
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- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
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- G01R31/2632—Circuits therefor for testing diodes
- G01R31/2635—Testing light-emitting diodes, laser diodes or photodiodes
Abstract
The invention discloses a measuring device for a C-V curve of a photoelectric avalanche diode, which belongs to the technical field of electrical appliance element testing, can realize automatic testing of the C-V curve of the photoelectric avalanche diode through junction capacitance of the photoelectric avalanche diode under different reverse bias conditions, and has the characteristics of convenient use, low cost and accurate testing; the intelligent control device comprises a human-computer interface, a bias module, a single chip microcomputer, a sine wave module, a double-path peak value detection module and a capacitance voltage conversion module, wherein the single chip microcomputer is respectively connected with the human-computer interface, the bias module, the sine wave module and the double-path peak value detection module, the output end of the sine wave module is connected with the input end of the double-path peak value detection module and the input end of the capacitance voltage conversion module, and the input end of the double-path peak value detection module is connected with the output end of the capacitance voltage conversion module. The invention also discloses a measuring method of the measuring device for the C-V curve of the photoelectric avalanche diode.
Description
Technical Field
The invention relates to the technical field of electrical element testing, in particular to a measuring device for a C-V curve of a photoelectric avalanche diode; the invention also relates to a measuring method of the measuring device.
Background
An APD (photo avalanche diode) is a photoelectric sensor made of semiconductor material, has the characteristics of high gain, high sensitivity and the like, has higher signal-to-noise ratio compared with a PIN (photo diode), is widely applied to optical distance meters, space optical transmission, scintillation detectors, laser radars and the like, and has wide application in various fields of military and national economy.
When the APD works at different bias voltages, the junction capacitance value of the APD also changes with the bias voltage, so that in different application occasions, the subsequent processing circuit design must consider the change rule of the input capacitance (namely the C-V curve of the avalanche photodiode) to fully exert the performance of the APD.
It follows that the C-V curve is one of the important parameters of APD. However, no special test equipment for the APD C-V curve exists at present, and the C-V curve test instruments on the market are mainly designed for the characteristics of semiconductor devices, cannot provide high voltage for APD bias, and cannot scan the C-V curve under different bias voltages. When APD is generally tested, a plurality of instruments are required to be combined together to complete the measurement of the C-V characteristic of the APD, and the point-by-point test is also required, so that the process is very complicated. Therefore, it is highly desirable to design a measuring device capable of conveniently testing the C-V curve of the avalanche photodiode so that people can master the variation rule of the input capacitance.
Disclosure of Invention
The invention aims to provide a measuring device for a C-V curve of a photoelectric avalanche diode, which can automatically test the C-V curve of the photoelectric avalanche diode output by junction capacitance of the photoelectric avalanche diode under different reverse bias conditions and has the characteristics of convenience in use, low cost and accurate test. The invention also aims to provide a measuring method of the measuring device for the C-V curve of the avalanche photodiode, which can automatically measure the capacitance values of the avalanche photodiode at different bias voltages to obtain the C-V curve of the avalanche photodiode and has the characteristics of convenient operation and high efficiency.
The former technical scheme of the invention is as follows:
a measuring device for a C-V curve of a photoelectric avalanche diode comprises a human-computer interface, a bias module, a single chip microcomputer, a sine wave module, a double-path peak value detection module and a capacitance voltage conversion module, wherein the single chip microcomputer is respectively connected with the human-computer interface, the bias module, the sine wave module and the double-path peak value detection module, the output end of the sine wave module is connected with the input end of the double-path peak value detection module and the input end of the capacitance voltage conversion module, and the input end of the double-path peak value detection module is connected with the output end of the capacitance voltage conversion module.
Further, the output end of the bias module is connected with the negative end of the avalanche photodiode, and the output end of the sine wave module is connected with the positive end of the avalanche photodiode.
Furthermore, the positive end of the photoelectric avalanche diode is also connected with the input end of the capacitance-voltage conversion module.
Further, the capacitance-voltage conversion module comprises a first operational amplifier U1, a resistor R1 and a capacitor C1, the resistor R1 and the capacitor C1 are connected in parallel, one end of the resistor R1 and one end of the capacitor C1 are connected to an inverting input terminal of the operational amplifier U1, the other end of the resistor R1 and the other end of the capacitor C1 are connected to an output terminal of the operational amplifier U1, the inverting input terminal of the operational amplifier U1 is further connected to a photo avalanche diode, and an input terminal of the sine wave module is connected to a non-inverting input terminal of the operational amplifier U1.
Furthermore, the sine wave module is composed of a sine oscillation circuit or a DDS direct digital frequency synthesizer.
Further, double-circuit peak detection module include first peak detection unit and second peak detection unit, first peak detection unit and second peak detection unit all be equipped with a second operational amplifier U2 and diode D1 in proper order, the output of capacitance-to-voltage conversion module is connected with the second operational amplifier U2 in-phase input of first peak detection unit, the diode D1 output of first peak detection unit is connected with the AD first port of singlechip, the output of sine wave module is connected with the second operational amplifier U2 in-phase input of second peak detection unit, the diode D1 output of second peak detection unit is connected with the AD second port of singlechip.
The latter technical scheme of the invention is as follows:
the measuring method of the measuring device for the C-V curve of the photoelectric avalanche diode comprises the following testing steps:
(1) the negative end of the photoelectric avalanche diode is connected with the output end of the bias module, and the positive end of the photoelectric avalanche diode and the output end of the sine wave module are respectively connected with the output end of the sine wave module and the capacitor voltage conversion module;
(2) the bias module outputs a bias voltage to the photoelectric avalanche diode and the singlechip, the sine wave module outputs sine wave information to the photoelectric avalanche diode and the double-path peak value detection module, and the photoelectric avalanche diode superposes the junction capacitance and the sine wave information under the current bias voltage and sends the superposition to the capacitance voltage conversion module to convert the superposition into sine voltage information which is output to the double-path peak value detection module;
(3) the two-path peak value detection module obtains sine wave information output by the sine wave module and sine voltage information output by the capacitance voltage conversion module, respectively converts the sine wave information and the sine voltage information into corresponding voltage amplitude values and transmits the corresponding voltage amplitude values to the single chip microcomputer;
(4) the single chip microcomputer obtains voltage amplitude values output by the sine wave module and the capacitance voltage conversion module, and the capacitance value of the photoelectric avalanche diode of the current bias voltage value is obtained after calculation;
(5) changing the bias voltage value output by the bias module, repeating the steps (2) to (4), and obtaining the capacitance values of the avalanche photo diode under different bias voltage values to obtain the C-V curve of the avalanche photo diode;
(6) and outputting the obtained C-V curve of the photoelectric avalanche diode through a man-machine interface.
Further, in the step (4), the capacitance value of the avalanche photodiode for calculating the current bias voltage value is expressed by the following formula:
wherein A isVVoltage output by sine wave module and capacitance voltage conversion moduleThe ratio of the amplitudes.
Compared with the prior art, the invention has the beneficial effects that:
1. in the measuring device for the C-V curve of the photoelectric avalanche diode, the bias voltage is applied to the photoelectric avalanche diode by arranging the bias module, sine wave information is superposed on the photoelectric avalanche diode by arranging the sine wave module, and the voltage amplitude output by the capacitance voltage conversion module and the sine wave module is obtained by conversion of the capacitance voltage conversion module and the two-way peak value detection module, so that the capacitance value of the photoelectric avalanche diode under the current bias voltage is calculated, and the C-V curve of the photoelectric avalanche diode can be obtained by continuously changing the applied bias voltage value.
2. The invention relates to a measuring method of a measuring device for a C-V curve of a photoelectric avalanche diode, which utilizes a single chip microcomputer to control a bias voltage value output by a bias module and sine wave information output by a sine wave module, obtains voltage amplitude values output by the sine wave module and a capacitance-voltage conversion module, obtains a capacitance value of the photoelectric avalanche diode of the current bias voltage value through calculation, controls the bias module to output different bias voltage values to obtain different capacitance values of the photoelectric avalanche diode through the single chip microcomputer, obtains the C-V curve of the photoelectric avalanche diode after arrangement, and is controlled by the single chip microcomputer to complete the whole measuring process, thereby being more convenient to operate and higher in efficiency.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the invention and together with the description serve to explain the invention without limiting the invention. In the drawings:
FIG. 1 is a block diagram of the modules of the present invention;
FIG. 2 is a circuit diagram of the capacitive voltage conversion module of the present invention;
fig. 3 is a circuit diagram of a dual path peak detection module of the present invention.
Description of reference numerals: 101-a human-machine interface; 102-a bias module; 103-a single chip microcomputer; 104-sine wave module; 105-a capacitive voltage conversion module; 107-two-way peak detection module; u1 — first operational amplifier; r1-resistance; c1-capacitance; u2 — second operational amplifier; d1-diode.
Detailed Description
The technical solution of the present invention will be described in further detail with reference to the following embodiments, but the present invention is not limited thereto.
A measuring device for a C-V curve of a photoelectric avalanche diode comprises a human-computer interface 101, a bias module 102, a single chip microcomputer 103, a sine wave module 104, a double-path peak value detection module 107 and a capacitance voltage conversion module 105, wherein the single chip microcomputer 103 is respectively connected with the human-computer interface 101, the bias module 102, the sine wave module 104 and the double-path peak value detection module 107, the output end of the sine wave module 104 is connected with the input end of the double-path peak value detection module 107 and the input end of the capacitance voltage conversion module 105, and the input end of the double-path peak value detection module 107 is connected with the output end of the capacitance voltage conversion module 105. In the measuring apparatus of the present invention, by providing the bias block 102, applying a bias voltage to the avalanche photodiode, by providing the sine wave block 104, sine wave information is superposed on the photoelectric avalanche diode, the reverse bias junction capacitance of the photoelectric avalanche diode is coupled into the amplitude of the sine wave information output by the operational amplifier, through the conversion of the capacitance voltage conversion module 105 and the two-way peak value detection module 107, the direct current voltage proportional to the reverse bias junction capacitance of the photoelectric avalanche diode is finally generated through the switch phase-sensitive demodulation and the filtering, the single chip microcomputer 103 obtains the voltage amplitude values output by the capacitance voltage conversion module 107 and the sine wave module 104, therefore, the capacitance value of the photoelectric avalanche diode under the current bias voltage is calculated, and the C-V curve of the photoelectric avalanche diode can be obtained by continuously changing the applied bias voltage value, so that the method is convenient to use, low in cost and accurate in test.
The output terminal of the bias module 102 is connected to the negative terminal of the avalanche photodiode, and the output terminal of the sine wave module 104 is connected to the positive terminal of the avalanche photodiode, so as to apply a bias voltage to the avalanche photodiode and superimpose sine wave information.
The positive terminal of the avalanche photodiode is also connected to the input of the capacitive-to-voltage conversion module 105.
The capacitance voltage conversion module 105 comprises a first operational amplifier U1, a resistor R1 and a capacitor C1, the resistor R1 and the capacitor C1 are connected in parallel, one end of the resistor R1 and one end of the capacitor C1 are connected with the inverting input end of the operational amplifier U1, the other end of the resistor R1 and the other end of the capacitor C1 are connected with the output end of the operational amplifier U1, the inverting input end of the operational amplifier U1 is further connected with a photo avalanche diode, and the input end of the sine wave module 104 is connected with the non-inverting input end of the operational amplifier U1. The model of the first operational amplifier U1 is AD795, and the resistance of resistance R1 is 1M ohm, and the value of electric capacity C1 is 20 pF.
The sine wave module 104 is composed of a sine oscillation circuit or a DDS direct digital frequency synthesizer.
Double-circuit peak detection module 107 include first peak detection unit and second peak detection unit, first peak detection unit and second peak detection unit all be equipped with a second operational amplifier U2 and diode D1 in proper order, capacitance voltage conversion module 105's output is connected with the second operational amplifier U2 non inverting input of first peak detection unit, the diode D1 output of first peak detection unit is connected with the AD first port of singlechip 103, the output of sine wave module 104 is connected with the second operational amplifier U2 non inverting input of second peak detection unit, the diode D1 output of second peak detection unit is connected with the AD second port of singlechip 103. Sine wave information output by the capacitance-voltage conversion module 105 is converted into a voltage amplitude by the first peak detection unit and the second peak detection unit, and sine wave information output by the sine wave module 104 is converted into a voltage amplitude by the second peak detection unit.
The invention discloses a measuring method of a measuring device for a C-V curve of a photoelectric avalanche diode, which comprises the following testing steps:
(1) the negative terminal of the avalanche photodiode is connected to the output terminal of the bias module 102, and the positive terminal of the avalanche photodiode is connected to the output terminal of the sine wave module 104 and the capacitance-to-voltage conversion module 105, respectively.
(2) The bias module 102 outputs a bias voltage to the avalanche photodiode and the single chip microcomputer 103, the sine wave module 104 outputs sine wave information to the avalanche photodiode and the double-path peak detection module 107, and the avalanche photodiode superposes junction capacitance and sine wave information under the current bias voltage and sends the superposition to the capacitance-voltage conversion module 105 to convert the superposition into sine voltage information, and the sine voltage information is output to the double-path peak detection module 107.
(3) The two-way peak value detection module 107 obtains sine wave information output by the sine wave module 104 and sine voltage information output by the capacitance voltage conversion module 105, respectively converts the sine wave information and the sine voltage information into corresponding voltage amplitudes, and transmits the corresponding voltage amplitudes to the single chip microcomputer 103.
Wherein, the sine wave information output by the sine wave module 104 is Vinsin (2 π f), the sine wave information outputted by the sine wave module 104 is respectively transmitted to the non-inverting terminal of the first operational amplifier U1 of the capacitance-voltage conversion module 105 and an input terminal of the dual-path peak detection module 107, and at this time, due to the virtual short of the operational amplifier, the ac voltage at the inverting terminal of the first operational amplifier U1 is also Vinsin (2 π f), therefore, the AC voltage output by the capacitance-voltage conversion module 105 is:
the ac voltage is sent to the two-way peak detection module 107 to detect the peak voltage, so as to obtain the amplified sinusoidal voltage amplitude, and the amplified voltage amplitude output by the capacitor voltage conversion module 105 and the voltage amplitude output by the sinusoidal wave module 104 are sent to the AD first port and the AD second port of the single chip microcomputer 103.
(4) The single chip microcomputer 103 obtains the voltage amplitude values output by the sine wave module 104 and the capacitance voltage conversion module 105, and obtains the capacitance value of the avalanche photodiode of the current bias voltage value after calculation.
The capacitance value formula of the avalanche photodiode for calculating the current bias voltage value is as follows:
wherein A isVIs the ratio of the voltage amplitudes output by the sine wave module 104 and the capacitance-voltage conversion module 105, C1The capacitance value of the capacitor C1 in the capacitance-to-voltage conversion module 105.
(5) And (5) changing the bias voltage value output by the bias voltage module 102, repeating the steps (2) to (4), and obtaining the capacitance values of the avalanche photo diode under different bias voltage values to obtain the C-V curve of the avalanche photo diode.
(6) And outputting the obtained C-V curve of the photoelectric avalanche diode through a man-machine interface 101.
The measuring method of the invention utilizes the single chip microcomputer to control the bias voltage value output by the bias module and the sine wave information output by the sine wave module, and obtains the voltage amplitude output by the sine wave module and the capacitance voltage conversion module, the capacitance value of the photoelectric avalanche diode of the current bias voltage value is obtained by calculation, the single chip microcomputer controls the bias module to output different bias voltage values to obtain different capacitance values of the photoelectric avalanche diode, and the C-V curve of the photoelectric avalanche diode is obtained after arrangement.
The above description is only exemplary of the invention, and any modification, equivalent replacement, and improvement made within the spirit and scope of the present invention should be considered within the scope of the present invention.
Claims (8)
1. The measuring device for the C-V curve of the photoelectric avalanche diode is characterized by comprising a human-computer interface (101), a bias module (102), a single chip microcomputer (103), a sine wave module (104), a double-path peak value detection module (107) and a capacitance voltage conversion module (105), wherein the single chip microcomputer (103) is respectively connected with the human-computer interface (101), the bias module (102), the sine wave module (104) and the double-path peak value detection module (107), the output end of the sine wave module (104) is connected with the input end of the double-path peak value detection module (107) and the input end of the capacitance voltage conversion module (105), and the input end of the double-path peak value detection module (107) is connected with the output end of the capacitance voltage conversion module (105).
2. The measurement device for the C-V curve of the avalanche photodiode according to claim 1, wherein the output of the bias module (102) is connected to the negative terminal of the avalanche photodiode and the output of the sine wave module (104) is connected to the positive terminal of the avalanche photodiode.
3. A measuring device for the C-V curve of a photo avalanche diode according to claim 1 or 2 characterized in that the positive terminal of the photo avalanche diode is further connected to the input of the capacitance voltage conversion module (105).
4. The measuring device for the C-V curve of the avalanche photo diode as claimed in claim 1, wherein the capacitance-voltage converting module (105) comprises a first operational amplifier (U1), a resistor (R1) and a capacitor (C1), the resistor (R1) and the capacitor (C1) are connected in parallel, one end of the resistor (R1) and the capacitor (C1) is connected to the inverting input terminal of the operational amplifier (U1), the other end of the resistor (R1) and the capacitor (C1) is connected to the output terminal of the operational amplifier (U1), the inverting input terminal of the operational amplifier (U1) is further connected to the avalanche photo diode, and the input terminal of the sine wave module (104) is connected to the non-inverting input terminal of the operational amplifier (U1).
5. The apparatus for measuring the C-V curve of a photo avalanche diode according to claim 1 wherein the sine wave module (104) is formed by a sine oscillating circuit or a DDS direct digital frequency synthesizer.
6. A measuring apparatus for C-V curve of avalanche photo diode according to claim 1, characterized in that the double-path peak detection module (107) comprises a first peak detection unit and a second peak detection unit, the first peak value detection unit and the second peak value detection unit are respectively provided with a second operational amplifier (U2) and a diode (D1) in turn, the output end of the capacitance-voltage conversion module (105) is connected with the non-inverting input end of a second operational amplifier (U2) of the first peak detection unit, the output end of a diode (D1) of the first peak value detection unit is connected with an AD first port of the singlechip (103), the output end of the sine wave module (104) is connected with the non-inverting input end of a second operational amplifier (U2) of a second peak value detection unit, and the output end of a diode (D1) of the second peak detection unit is connected with an AD second port of the singlechip (103).
7. A measuring method using a measuring apparatus for a C-V curve of a photo avalanche diode according to claim 1, characterized by comprising the following test steps:
(1) the negative end of the photoelectric avalanche diode is connected with the output end of the bias module (102), and the positive end of the photoelectric avalanche diode is respectively connected with the output end of the sine wave module (104) and the capacitance-voltage conversion module (105);
(2) the bias module (102) outputs a bias voltage to the photoelectric avalanche diode and the single chip microcomputer (103), the sine wave module (104) outputs sine wave information to the photoelectric avalanche diode and the double-path peak value detection module (107), and the photoelectric avalanche diode superposes junction capacitance and sine wave information under the current bias voltage and sends the superposition to the capacitance-voltage conversion module (105) to convert the superposition into sine voltage information and outputs the sine voltage information to the double-path peak value detection module (107);
(3) the two-path peak value detection module (107) obtains sine wave information output by the sine wave module (104) and sine voltage information output by the capacitance voltage conversion module (105) and respectively converts the sine wave information and the sine voltage information into corresponding voltage amplitude values and transmits the corresponding voltage amplitude values to the single chip microcomputer (103);
(4) the single chip microcomputer (103) acquires voltage amplitude values output by the sine wave module (104) and the capacitance voltage conversion module (105), and the capacitance value of the photoelectric avalanche diode of the current bias voltage value is acquired after calculation;
(5) changing the bias voltage value output by the bias module (102), repeating the steps (2) to (4), and obtaining the capacitance values of the photoelectric avalanche diode under different bias voltage values to obtain a C-V curve of the photoelectric avalanche diode;
(6) and outputting the obtained C-V curve of the photoelectric avalanche diode through a man-machine interface (101).
8. The method for measuring the C-V curve of the avalanche photodiode according to claim 7, wherein in the step (4), the capacitance value of the avalanche photodiode for calculating the current bias voltage value is formulated as:
wherein A isVThe ratio of the voltage amplitude output by the sine wave module (104) and the capacitance voltage conversion module (105).
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| CN114646813A (en) * | 2022-05-13 | 2022-06-21 | 之江实验室 | Photodiode junction capacitance measuring device and method |
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