CN106768320A - Significantly gate single-photon detection system at a high speed - Google Patents
Significantly gate single-photon detection system at a high speed Download PDFInfo
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- CN106768320A CN106768320A CN201710026025.2A CN201710026025A CN106768320A CN 106768320 A CN106768320 A CN 106768320A CN 201710026025 A CN201710026025 A CN 201710026025A CN 106768320 A CN106768320 A CN 106768320A
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- 238000001514 detection method Methods 0.000 title claims abstract description 29
- 238000007493 shaping process Methods 0.000 claims abstract description 32
- 230000003321 amplification Effects 0.000 claims abstract description 16
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 16
- 239000000284 extract Substances 0.000 claims abstract description 6
- 238000005070 sampling Methods 0.000 claims description 9
- 238000012216 screening Methods 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000686 essence Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4413—Type
- G01J2001/442—Single-photon detection or photon counting
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
- G01J2001/4466—Avalanche
Abstract
Single-photon detection system is significantly gated at a high speed the invention discloses a kind of, including：Phaselocked loop (V1), Precision delayer (DL1), input filter and amplification module (1), APD modules (2), output filter module (3) and examination and the Shaping Module (4) being sequentially connected；Wherein：External clock reference accesses phaselocked loop (V1) through IN interfaces, reaches the position of gate-control signal by Precision delayer (DL1) fine adjustment photon after phaselocked loop (V1) phase locking frequency multiplying so that the counting rate of detection system is in peak；It is input into APD modules (2) after shaping and enhanced processing are carried out to input signal by input filter and amplification module (1) again, the output signal of APD modules (2) is filtered by output filter module (3), extract avalanche signal, it is last avalanche signal to be screened and shaping by examination and Shaping Module (4), obtain count signal.The system can improve single-photon detector detection efficient and counting rate.
Description
Technical field
Single photon is significantly gated the present invention relates to quantum communications, quantum information technology field, more particularly to a kind of high speed
Detection system.
Background technology
Single-photon detector is the main tool for carrying out superweak optical detection, is had a wide range of applications in various fields.Monochromatic light
The basic functional principle of sub- detector is：Avalanche photodide (APD) is operated under Geiger mode angular position digitizer, i.e. the reverse bias of APD
Voltage exceedes its avalanche breakdown voltage.After incident photon is absorbed, a pair of carriers can be produced, due to ionization by collision effect
Should, carrier forms avalanche effect and final output macroscopic electrical current, and rear end quenching circuit can be exported after avalanche signal is detected
Detectable signal, while by circuit reset for the next photon of detection.Detector detection efficient is main by coupling efficiency, absorption
Efficiency and snowslide efficiency are determined.Coupling efficiency refers to photon reaches the probability of APD absorbed layers from light source, by optical coupling efficiency or
The many factors such as free space coupling efficiency, APD incident end faces reflectance factor, connector loss are determined；Absorption efficiency is sometimes
Referred to as quantum efficiency, from physical mechanism, absorption efficiency depends primarily on the thickness of absorbed layer；Snowslide efficiency refers to that carrier draws
The probability of avalanche effect is played, the part of the overvoltage of APD, i.e. reverse bias voltage higher than avalanche breakdown voltage is depended primarily on.
General commercial single-photon detector due to the limitation of Detection Techniques, for meet dark count rate, afterpulse probability will
Ask, can reduce overvoltage when avalanche photodide APD works, and the dead time more long is set.Therefore avalanche photodide APD
Detection performance fail to play completely, detector detection efficient and counting rate index are not high enough, it is impossible to meet that some needs are high to be visited
Survey the application of efficiency.
The content of the invention
Single-photon detection system is significantly gated at a high speed it is an object of the invention to provide a kind of, single photon detection can be improved
Device detection efficient and counting rate.
The purpose of the present invention is achieved through the following technical solutions：
It is a kind of significantly to gate single-photon detection system at a high speed, including：Phaselocked loop (V1), the Precision delayer being sequentially connected
(DL1), input filter and amplification module (1), APD modules (2), output filter module (3) and examination and Shaping Module (4)；
Wherein：
External clock reference accesses phaselocked loop (V1) through IN interfaces, by Precision delayer after phaselocked loop (V1) phase locking frequency multiplying
(DL1) fine adjustment photon reaches the position of gate-control signal so that the counting rate of detection system is in peak；Again by input filter
And amplification module (1) shaping and enhanced processing are carried out to input signal after be input into APD modules (2), by output filter module (3)
Output signal to APD modules (2) is filtered, and extracts avalanche signal, finally by screening with Shaping Module (4) to snowslide letter
Number screened and shaping, obtained count signal.
The input filter and amplification module (1) include：The bandpass filter (F1) and radio-frequency power being sequentially connected amplify
Device (A1)；The bandpass filter (F1) carries out shaping to the gate-control signal being input into, and the radio-frequency power amplifier (A1) is to whole
Gate-control signal after shape carries out signal enhanced processing.
The APD modules include：Build-out resistor (R1), capacitance (C1), low noise DC bias supplies (P1), selection
Switch (S1), current-limiting resistance (R2), APD, sampling resistor (R3) and temperature control chip (I1)；
The input filter and amplification module (1) are coupled to the negative electrode of APD, the exchange by AC coupled input circuit
Couple input circuit is made up of build-out resistor (R1) and capacitance (C1), build-out resistor (R1) one end ground connection, the other end with it is defeated
Enter the output end of filtering and amplification module, and one end of capacitance (C1) is connected；The other end and APD of capacitance (C1)
Negative electrode and one end of current-limiting resistance (R2) be connected, current-limiting resistance (R2) other end and low noise DC bias supplies (P1) phase
Even, the open and close state of low noise DC bias supplies (P1) is controlled by selecting switch (S1), whether control detector works；
The anode of APD is connected with the input of output filter module and sampling resistor (R3) one end, sampling resistor (R3) other end ground connection；Temperature
Degree control chip (I1) the semiconductor refrigerating TEC integrated with APD itself and thermistor are connected, and control avalanche photodide work
The temperature of work.
The output filter module (3) includes：The bandstop filter (F2) and low pass filter (F3) being sequentially connected；Using
Bandstop filter (F2) removes the capacitive corresponding signal of APD modules (2) output signal with the mode of low pass filter (F3) cascade,
So as to extract avalanche signal.
The examination includes with Shaping Module (4)：The high speed discriminator (D1) and shaping pulse module (M1) being sequentially connected；
The high speed discriminator (D1) is screened to the avalanche signal being input into, output digit signals；The shaping pulse module (M1)
Shaping is carried out to data signal, count signal is obtained.
As seen from the above technical solution provided by the invention, photon is adjusted by Precision delayer and reaches gate-control signal
Position and act on APD, on the one hand, gate speeds are fast, and gate action time is short in each cycle, greatly inhibit dark
Count and afterpulse probability；On the other hand, gate amplitude is high, and avalanche photodide APD two is added in when detector is worked
Over-pressed high, the snowslide efficiency of lifting avalanche photodide APD, so as to lift detector detection efficient at end；Also adopt
The mode cascaded with bandstop filter and low pass filter removes capacitive corresponding signal, extracts avalanche signal, screens snowslide letter
After number, without carrying out dead time treatment, count signal is directly exported, be obviously improved DCR.
Brief description of the drawings
Technical scheme in order to illustrate more clearly the embodiments of the present invention, below will be to that will use needed for embodiment description
Accompanying drawing be briefly described, it should be apparent that, drawings in the following description are only some embodiments of the present invention, for this
For the those of ordinary skill in field, on the premise of not paying creative work, other can also be obtained according to these accompanying drawings
Accompanying drawing.
Fig. 1 is the circuit structure signal that a kind of high speed provided in an embodiment of the present invention significantly gates single-photon detection system
Figure；
Fig. 2 is single-photon avalanche signal waveforms provided in an embodiment of the present invention.
Specific embodiment
With reference to the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Ground description, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.Based on this
Inventive embodiment, the every other implementation that those of ordinary skill in the art are obtained under the premise of creative work is not made
Example, belongs to protection scope of the present invention.
The embodiment of the present invention provides a kind of high speed and significantly gates single-photon detection system, as shown in figure 1, it is mainly wrapped
Include：Phaselocked loop V1, Precision delayer DL1, input filter and amplification module 1, the APD modules 2, output filter module being sequentially connected
3 and screen with Shaping Module 4；Wherein：
External clock reference accesses phaselocked loop V1 through IN interfaces, by Precision delayer DL1 essences after phaselocked loop V1 phase locking frequency multiplyings
Close regulation photon reaches the position of gate-control signal so that the counting rate of detection system is in peak；Again by input filter and amplification
Module 1 is input into APD modules 2 after shaping and enhanced processing are carried out to input signal, by output filter module 3 to APD modules 2
Output signal is filtered, and extracts avalanche signal as shown in Figure 2, finally by screening to enter avalanche signal with Shaping Module 4
Row is screened and shaping, obtains count signal.
In embodiment of the present invention such scheme, using significantly gate-control signal acts on APD at a high speed；On the one hand, speed is gated
Degree is fast, and, up to 152M, gate action time is short in each cycle, greatly inhibits dark counting and afterpulse probability for frequency；
On the other hand, gate amplitude is high, and generally gate amplitude is added in avalanche photodide APD up to 50V when detector is worked
Over-pressed high, the snowslide efficiency of lifting avalanche photodide APD, so as to lift detector detection efficient at two ends.Additionally, adopting
The mode cascaded with bandstop filter and low pass filter removes capacitive corresponding signal, extracts avalanche signal, screens snowslide letter
After number, without carrying out dead time treatment, count signal is directly exported, be obviously improved DCR, counting rate is up to 50M.
In order to make it easy to understand, being described further below for modules.
As shown in figure 1, the input filter and amplification module 1 include：The bandpass filter F1 and radio frequency work(being sequentially connected
Rate amplifier A1；The bandpass filter F1 carries out shaping to the gate-control signal being input into, and improves gate-control signal spectral characteristic, described
Radio-frequency power amplifier A1 carries out signal enhanced processing to the gate-control signal after shaping, obtains significantly gate-control signal.
As shown in figure 1, the APD modules include：Build-out resistor R1, capacitance C1, low noise DC bias supplies P1,
Selecting switch S1, current-limiting resistance R2, APD, sampling resistor R3 and temperature control chip I1；Wherein, the input filter and amplification
Module 1 by AC coupled input circuit coupled to APD negative electrode, the AC coupled input circuit by build-out resistor R1 and every
Straight electric capacity C1 compositions, build-out resistor R1 one end ground connection, the other end and input filter and the output end of amplification module, and blocking electricity
The one end for holding C1 is connected；The other end of capacitance C1 is connected with one end of the negative electrode of APD and current-limiting resistance R2, current-limiting resistance
The R2 other ends are connected with low noise DC bias supplies P1, control low noise DC bias supplies P1's by selecting switch S1
Whether open and close state, control detector works；The anode of APD and the input of output filter module and sampling resistor R3 one end phase
Even, sampling resistor R3 other ends ground connection；Temperature control chip I1 and APD itself integrated semiconductor refrigerating TEC and thermistor
It is connected, the temperature of control avalanche photodide work.
As shown in figure 1, the output filter module 3 includes：The bandstop filter F2 and low pass filter F3 being sequentially connected；
Because APD is a kind of nonlinear device, even if so input gate-control signal frequency spectrum be perfect unifrequency, in the capacitive of APD
Also harmonic signal is had in response signal frequency spectrum, therefore in addition to being filtered to basic frequency, the harmonic wave for higher frequency is believed
It is also essential for number being filtered.In the embodiment of the present invention, cascaded using bandstop filter F2 and low pass filter F3
Mode removes the capacitive corresponding signal of the output signal of APD modules 2, so as to extract avalanche signal.
As shown in figure 1, the examination includes with Shaping Module 4：The high speed discriminator D1 and shaping pulse mould being sequentially connected
Block M1；The high speed discriminator D1 is screened to the avalanche signal being input into, output digit signals；The shaping pulse module M1
Shaping is carried out to data signal, count signal is obtained.After screening avalanche signal, without carrying out dead time treatment, directly output is counted
Number signal, is obviously improved DCR.
The operation principle of said system is as follows：As shown in figure 1, using significantly gate-control signal is acted on APD at a high speed,
In gate duration, APD is operated in Geiger mode angular position digitizer；After incident single photon is reached in gate duration to be absorbed, can produce
A pair of carriers simultaneously form avalanche effect, and final output macroscopic electrical current produces avalanche signal；It is generally high because gate amplitude is very high
In 50V, the overvoltage at avalanche photodide APD two ends is very big, can effectively improve detection efficient；Meanwhile, in each cycle
Gate action time is very short, and typically smaller than 3ns greatly inhibits dark counting and afterpulse probability.Due to gate action time
Short, avalanche signal is fainter, and the presence of the junction capacity and circuit parasitic capacitance of avalanche photodide APD, avalanche optoelectronic
Diode APD can simultaneously export the capacitive response signal for high speed gate-control signal so that avalanche signal cannot be extracted.The present invention
Capacitive corresponding signal is removed by using the method for the cascade of bandstop filter and low pass filter, avalanche signal is extracted.Cause
For the snowslide time is short, afterpulse effect very little, so it is number to screen and in reforming process, will screen avalanche signal in avalanche signal
After word signal, without carrying out dead time treatment, count signal is directly exported, so detector has high counting rate.
The above, the only present invention preferably specific embodiment, but protection scope of the present invention is not limited thereto,
Any one skilled in the art in the technical scope of present disclosure, the change or replacement that can be readily occurred in,
Should all be included within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection model of claims
Enclose and be defined.
Claims (5)
1. it is a kind of significantly to gate single-photon detection system at a high speed, it is characterised in that including：The phaselocked loop (V1) that is sequentially connected,
Precision delayer (DL1), input filter and amplification module (1), APD modules (2), output filter module (3) and screen with it is whole
Shape module (4)；Wherein：
External clock reference accesses phaselocked loop (V1) through IN interfaces, by Precision delayer (DL1) after phaselocked loop (V1) phase locking frequency multiplying
Fine adjustment photon reaches the position of gate-control signal so that the counting rate of detection system is in peak；By input filter and put again
Big module (1) is input into APD modules (2) after shaping and enhanced processing are carried out to input signal, right by output filter module (3)
The output signal of APD modules (2) is filtered, and extracts avalanche signal, finally by screening with Shaping Module (4) to avalanche signal
Screened and shaping, obtained count signal.
2. a kind of high speed according to claim 1 significantly gates single-photon detection system, it is characterised in that the input
Filtering and amplification module (1) include：The bandpass filter (F1) and radio-frequency power amplifier (A1) being sequentially connected；The band logical filter
Ripple device (F1) carries out shaping to the gate-control signal being input into, and the radio-frequency power amplifier (A1) is carried out to the gate-control signal after shaping
Signal enhanced processing.
3. a kind of high speed according to claim 1 significantly gates single-photon detection system, it is characterised in that the APD
Module includes：Build-out resistor (R1), capacitance (C1), low noise DC bias supplies (P1), selecting switch (S1), current limliting electricity
Resistance (R2), APD, sampling resistor (R3) and temperature control chip (I1)；
The input filter and amplification module (1) are coupled to the negative electrode of APD, the AC coupled by AC coupled input circuit
Input circuit is made up of build-out resistor (R1) and capacitance (C1), and build-out resistor (R1) one end ground connection, the other end is filtered with input
Involve the output end of amplification module, and one end of capacitance (C1) is connected；The other end of capacitance (C1) and the moon of APD
One end of pole and current-limiting resistance (R2) is connected, and current-limiting resistance (R2) other end is connected with low noise DC bias supplies (P1),
The open and close state of low noise DC bias supplies (P1) is controlled by selecting switch (S1), whether control detector works；APD
Anode be connected with the input of output filter module and sampling resistor (R3) one end, sampling resistor (R3) other end ground connection；Temperature
Control chip (I1) the semiconductor refrigerating TEC integrated with APD itself and thermistor are connected, control avalanche photodide work
Temperature.
4. a kind of high speed according to claim 1 significantly gates single-photon detection system, it is characterised in that the output
Filtration module (3) includes：The bandstop filter (F2) and low pass filter (F3) being sequentially connected；Using bandstop filter (F2) with
The mode of low pass filter (F3) cascade removes the capacitive corresponding signal of APD modules (2) output signal, so as to extract snowslide letter
Number.
5. a kind of high speed according to claim 1 significantly gates single-photon detection system, it is characterised in that the examination
Include with Shaping Module (4)：The high speed discriminator (D1) and shaping pulse module (M1) being sequentially connected；The high speed discriminator
(D1) avalanche signal being input into is screened, output digit signals；The shaping pulse module (M1) is carried out to data signal
Shaping, obtains count signal.
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| CN107167251A (en) * | 2017-07-28 | 2017-09-15 | 浙江九州量子信息技术股份有限公司 | A kind of single-photon detector based on high frequency sinusoidal gate pulse pattern |
| CN107271059A (en) * | 2017-07-24 | 2017-10-20 | 中国科学技术大学 | A kind of high-speed single photon detector monolithic integrated optical circuit |
| CN113708846A (en) * | 2021-08-12 | 2021-11-26 | 国开启科量子技术(北京)有限公司 | Gate control device for single-photon detector and quantum communication equipment |
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| CN113708846A (en) * | 2021-08-12 | 2021-11-26 | 国开启科量子技术(北京)有限公司 | Gate control device for single-photon detector and quantum communication equipment |
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Application publication date: 20170531 |
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