CN103280775B - Insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit - Google Patents
Insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit Download PDFInfo
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- CN103280775B CN103280775B CN201310263167.2A CN201310263167A CN103280775B CN 103280775 B CN103280775 B CN 103280775B CN 201310263167 A CN201310263167 A CN 201310263167A CN 103280775 B CN103280775 B CN 103280775B
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Abstract
The present invention relates to insulated gate bipolar transistor (IGBT) Drive Control Technique, particularly IGBT Parallel opertation dynamic delay current foldback circuit.The present invention is directed to overcurrent protection problem when prior art IGBT parallel connection uses, disclose a kind of IGBT Parallel opertation dynamic delay current foldback circuit, according to the size dynamic conditioning time of delay of overcurrent.Technical scheme of the present invention is, insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit, is made up of N number of wired in parallel, and N is integer, N >=2; Wherein each module comprises: curent change sampling unit, electric current reduction unit, overcurrent bear time calculating unit, fixing turn-off time control unit, driver element and IGBT, and the IGBT collector electrode of each module is connected with power supply by load.Overcurrent protection antijamming capability of the present invention is strong, can not turn off by mistake, after over-current signal is removed, automatically recovers normal work, is easy to miniaturized and integrated.
Description
Technical field
The present invention relates to insulated gate bipolar transistor (IGBT) Drive Control Technique, particularly insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit.
Background technology
In order to expand the output capacity of power electronic equipment, when the capacity of single main switching device does not meet power requirement time, by its use in parallel, be a kind of conventional method, the method can improve in circuit the maximum current allowing to pass through greatly.When IGBT module parallel uses, the electric current of main circuit is the several times of the electric current passed through in single IGBT module.So, when IGBT conducting, arrive first logical IGBT and will bear excessive electric current; When IGBT turns off, the IGBT of rear shutoff will bear excessive electric current.Although IGBT self has certain overcurrent ability to bear, excessive electric current can not be born for a long time.
In order to solve the flow problem excessively in IGBT parallel connection, mainly containing now two kinds of modes: the first, when over-current signal being detected, just removing IGBT signal (drive singal) rapidly, IGBT is turned off.This method poor anti jamming capability, once detect that over-current signal just turns off, is easy to misoperation occurs.The second, when over-current signal being detected, time delay is fixed to drive singal, makes IGBT device still maintain conducting, extend the time that device overcurrent bears.But constant time lag cannot turn off under causing big current in time, may turn off during small area analysis by mistake.IGBT self has overcurrent ability to bear, and during big current, it is short that overcurrent bears the time, and during small area analysis, it is long that overcurrent bears the time.
Summary of the invention
To be solved by this invention is exactly problem, overcomes overcurrent protection problem when prior art IGBT parallel connection uses exactly, proposes a kind of IGBT Parallel opertation dynamic delay current foldback circuit, according to the size dynamic conditioning time of delay of overcurrent.Make IGBT reliable turn-off in safety operation area, and avoid as much as possible turning off by mistake.
The technical scheme that the present invention solves the employing of told technical problem is that insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit, is characterized in that, be made up of N number of wired in parallel, N is integer, N >=2; Wherein each module comprises: curent change sampling unit, electric current reduction unit, overcurrent bear time calculating unit, fixing turn-off time control unit, driver element and IGBT, and the IGBT collector electrode of each module is connected with power supply by load;
The emitter of the input termination IGBT of described curent change sampling unit, exports the input of termination electric current reduction unit; Curent change sampling unit detects the change of IGBT electric current, and exports in the form of a voltage;
The first input end of described electric current reduction unit connects the output of curent change sampling unit, the second input termination drive singal, and output takes over the first input end that stream bears time calculating unit; Described electric current reduction unit is used for carrying out integral processing to the output voltage of curent change sampling unit;
The first input end that described overcurrent bears time calculating unit connects the output of electric current reduction unit, and the second input termination reference voltage, exports the input that termination fixes turn-off time control unit; Described overcurrent bears time calculating unit and bears the time for dynamic conditioning overcurrent, and that shortens big current bears the time, and what extend small area analysis bears the time;
The input of described fixing turn-off time control unit is taken over stream and is born time calculating unit output, exports the second input of termination driver element; Described fixing turn-off time control unit, by the pulse of an output fixed pulse width, prevents IGBT continuous firing on off state;
The first input end of described driver element connects drive singal, and the second input termination fixes the output of turn-off time control unit.
Concrete, described curent change sampling unit comprises 2 clamp diodes, mutual inductor and load resistances; 2 clamp diode reverse parallel connections and with the parallel connection of primary windings of mutual inductor; The termination input of the same name of mutual inductor primary coil, different name end ground connection; The different name end ground connection of mutual inductor secondary coil, Same Name of Ends is output; Load resistance and mutual inductor parallel connection of secondary windings.
Concrete, described electric current reduction unit is made up of an operational amplifier and peripheral circuit thereof.
Concrete, described overcurrent bears time calculating unit and is made up of 3 operational amplifiers and peripheral circuit thereof.
Concrete, the d type flip flop that described fixing turn-off time control unit is triggered by a rising edge and a constant current discharge circuit form, and its turn-off time is determined by charging capacitor and discharging current.
The invention has the beneficial effects as follows, over-flow protecting effect is not by the impact of signal delay time, and antijamming capability is strong; Can not turn off, when overcurrent is large, fast response time, after over-current signal is removed, recovers normal work automatically by mistake; Required component size is little, is easy to miniaturized and integrated.
For making object of the present invention, technical scheme clearly, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in further details.
Fig. 1 is schematic diagram of the present invention;
Fig. 2 is the schematic diagram of curent change sampling unit;
Fig. 3 is the schematic diagram of electric current reduction unit;
Fig. 4 is the schematic diagram that overcurrent bears time calculating unit;
Fig. 5 is the schematic diagram of fixing turn-off time control unit.
Embodiment
Fig. 1 is insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit schematic diagram of the present invention.It is by P1 ... Pn is n wired in parallel composition altogether, and wherein each module comprises: curent change sampling unit, electric current reduction unit, overcurrent bear time calculating unit, fixing turn-off time control unit, driver element and IGBT.The IGBT collector electrode of each module is connected with power supply VCC by load Load.When IGBT parallel connection uses, if the electric current flowing through modules is equal, the electric current so flowing through load Load is exactly N times of the electric current passed through in single IGBT module.So when IGBT conducting, the IGBT of first conducting will bear excessive electric current; When IGBT turns off, the IGBT of rear shutoff will bear excessive electric current.The electric current that the IGBT of each module bears by current sampling unit and electric current reduction unit reflect electric current size, overcurrent bears the size of time calculating unit according to electric current, obtain time of delay relevant to size of current value, prevent to greatest extent turning off by mistake.After over-current signal produces, obtain the pulse of a fixing turn-off time through fixing turn-off time control unit, prevent IGBT to be operated in persistent switch state, act on IGBT finally by driver element.
Fig. 2 is a kind of implementation of curent change sampling unit in Fig. 1.This current sampling unit is made up of clamp diode D11, D12, mutual inductor T11 and load resistance R11.The emitter of the input termination IGBT of current sampling unit, exports the input of termination electric current reduction unit.Wherein, the minus earth of clamp diode D11, anode connects input; The negative electrode of D12 connects input, plus earth; The Same Name of Ends of mutual inductor T11 primary coil is input, different name end ground connection, secondary coil different name end ground connection, and Same Name of Ends is output; Load resistance R11 is connected in parallel on output.Curent change sampling unit mutual inductor detects the change of this module I GBT electric current, and reflects in the form of a voltage.According to inductance characteristic
draw the relation of curent change sampling unit output end voltage and electric current,
wherein M is determined jointly by mutual inductor inductance ratio and load resistance, and output end voltage can reflect the current changing rate of this module I GBT constantly, and sampling is reliable.And time static, curent change sampling unit does not have direct current conduction impedance, does not increase DC losses, time dynamic, due to the existence of clamp voltage, also little on the switching speed impact of IGBT.
Fig. 3 is a kind of implementation of electric current reduction unit in Fig. 1.This electric current reduction unit is by resistance R21, R22, R23, and electric capacity C21, C22, metal-oxide-semiconductor PM21 and operational amplifier A MP1 forms.The first input end of electric current reduction unit connects the output of curent change sampling unit, and the second input termination drive singal, output takes over the first input end that stream bears time calculating unit.Wherein, resistance R21 one end is input, the in-phase input end of another termination operational amplifier A MP1.Electric capacity C21 one end ground connection, the in-phase input end of another termination operational amplifier A MP1.Resistance R22 one end ground connection, the inverting input of another termination operational amplifier A MP1.Resistance R23, electric capacity C22 are connected in parallel between the source electrode of metal-oxide-semiconductor PM21 and drain electrode, and the drain electrode of metal-oxide-semiconductor PM21 connects the inverting input of operational amplifier A MP1, and source electrode connects the output of operational amplifier A MP1, and grid meets the drive singal n of this module; The output of operational amplifier A MP1 is as the output of electric current reduction unit.Wherein operational amplifier A MP1 adopts VDD and VSS dual power supply.Electric current reduction unit version is an integrating circuit, for carrying out integral processing to the output voltage of curent change sampling unit.According to
obtain:
Wherein K is determined by the parameter of integrating circuit.The output voltage of electric current reduction unit is one and the linear value of sample rate current, by carrying out integration to the output voltage of this blocks current change sampling unit, can reflect the current value of current module I GBT.Wherein, R21 and C21 forms a low pass filter, and the output of low pass filter is as the in-phase input signals for 1 of operational amplifier A MP1, and metal-oxide-semiconductor PM21 conducting when the drive singal n of this module is low level, resets the electric charge on electric capacity C22.
Fig. 4 is a kind of implementation that in Fig. 1, overcurrent bears time calculating unit.The first input end that overcurrent bears time calculating unit meets the output Vn of electric current reduction unit, and the second input termination reference voltage Vref, output V0n connects the input of fixing turn-off time control unit.As shown in Figure 4, resistance R31, metal-oxide-semiconductor M35, operational amplifier A MP31 form Voltage-current conversion circuit, output current
this electric current exports electric capacity C31 to by metal-oxide-semiconductor M31, M32 mirror image, wherein the other end ground connection of electric capacity C31; In like manner, resistance R32, metal-oxide-semiconductor M36, operational amplifier A MP32 form Voltage-current conversion circuit, output current
this electric current by metal-oxide-semiconductor M33, M34 mirror image, then exports electric capacity C31 to by metal-oxide-semiconductor M37, M38 mirror image, and now, the voltage on electric capacity C31 is
v
c31>=0, as voltage V
c31during >Vref, VOn is high level, visible, I
o1-I
o2larger, it is less that overcurrent bears the time, I
o1-I
o2less, it is larger that overcurrent bears the time.Achieve dynamic conditioning overcurrent and bear the time, that shortens big current bears the time, extends the object of the time of bearing of small area analysis.The in-phase input end of operational amplifier A MP33 connects the drain electrode of electric capacity C31 and metal-oxide-semiconductor M32, the drain electrode of M37, anti-phase input termination reference voltage Vref, exports the input that VOn connects fixing turn-off time control unit.
Fig. 5 is a kind of implementation of fixing turn-off time control unit in Fig. 1.The d type flip flop that fixing turn-off time control unit is triggered by a rising edge and a constant current discharge circuit form.Fixing turn-off time control unit, by the pulse of an output fixed pulse width, prevents IGBT continuous firing on off state.Turn-off time is determined by charging capacitor C2 and discharging current IB.In figure, metal-oxide-semiconductor PM1, NM1 form constant current charge/discharge control circuit.Complete at capacitor discharge, before rising edge arrives, now S=1, D=1, R=QN, output Q must be set to 0, QN and must be set to 1; When rising edge arrives, R=1, S=1, D=1, Q=O, QN=1, trigger overturns at once, exports Q=1, QN=0, and electric capacity starts electric discharge, and at the capacitor discharge initial stage, capacitance voltage still keeps high potential, and inverter INV0 and INV1 exports constant, and R=1 is constant; If when capacitor discharge action does not complete, next rising edge arrives, now, R=1, S=1, D=1, Q=1, QN=0, trigger does not overturn, and exporting is still Q=1, QN=0, and electric capacity continues electric discharge; When being discharged to low level, inverter INV0 upset is 1, and inverter INV1 upset is 0, and inverter IN0 and INV1 is by the intermediate level on electric capacity C2, be converted into low and high level through two-stage is anti-phase, now, R=0, S=1, Q is set to 0, QN and is set to 1, R and is again set to 1.
Driver element major function of the present invention is amplified the output signal of drive singal and fixing turn-off time control unit, to drive IGBT action.Can adopt conventional amplifying circuit, as formations such as push-pull amplifier circuits, because circuit structure is simple, technology maturation the present invention be not specifically noted.
Claims (5)
1. insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit, is characterized in that, is made up of N number of wired in parallel, and N is integer, N >=2; Wherein each module comprises: curent change sampling unit, electric current reduction unit, overcurrent bear time calculating unit, fixing turn-off time control unit, driver element and IGBT, and the IGBT collector electrode of each module is connected with power supply by load;
The emitter of the input termination IGBT of described curent change sampling unit, exports the input of termination electric current reduction unit; Curent change sampling unit detects the change of IGBT electric current, and exports in the form of a voltage;
The first input end of described electric current reduction unit connects the output of curent change sampling unit, the second input termination drive singal, and output takes over the first input end that stream bears time calculating unit; Described electric current reduction unit is used for carrying out integral processing to the output voltage of curent change sampling unit;
The first input end that described overcurrent bears time calculating unit connects the output of electric current reduction unit, and the second input termination reference voltage, exports the input that termination fixes turn-off time control unit; Described overcurrent bears time calculating unit and bears the time for dynamic conditioning overcurrent, and that shortens big current bears the time, and what extend small area analysis bears the time;
The input of described fixing turn-off time control unit is taken over stream and is born time calculating unit output, exports the second input of termination driver element; Described fixing turn-off time control unit, by the pulse of an output fixed pulse width, prevents IGBT continuous firing on off state;
The first input end of described driver element connects drive singal, and the second input termination fixes the output of turn-off time control unit.
2. insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit according to claim 1, it is characterized in that, described curent change sampling unit comprises 2 clamp diodes, mutual inductor and load resistances; 2 clamp diode reverse parallel connections and with the parallel connection of primary windings of mutual inductor; The termination input of the same name of mutual inductor primary coil, different name end ground connection; The different name end ground connection of mutual inductor secondary coil, Same Name of Ends is output; Load resistance and mutual inductor parallel connection of secondary windings.
3. insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit according to claim 1, it is characterized in that, described electric current reduction unit is made up of an operational amplifier and peripheral circuit thereof.
4. insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit according to claim 1, is characterized in that, described overcurrent bears time calculating unit and is made up of 3 operational amplifiers and peripheral circuit thereof.
5. insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit according to claim 1; it is characterized in that; the d type flip flop that described fixing turn-off time control unit is triggered by a rising edge and a constant current discharge circuit form, and its turn-off time is determined by charging capacitor and discharging current.
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| CN201310263167.2A CN103280775B (en) | 2013-06-27 | 2013-06-27 | Insulated gate bipolar transistor Parallel opertation dynamic delay current foldback circuit |
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| CN103280775B true CN103280775B (en) | 2015-11-25 |
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| CN105119590A (en) * | 2015-09-18 | 2015-12-02 | 江苏中科君芯科技有限公司 | IGBT high efficient drive circuit |
| CN109448658A (en) * | 2018-12-27 | 2019-03-08 | 惠科股份有限公司 | Current foldback circuit and display device |
| CN111901923B (en) * | 2020-08-03 | 2023-10-03 | 四川遂宁市利普芯微电子有限公司 | Overcurrent protection circuit of common-cathode LED display line driving chip |
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| JPH09289442A (en) * | 1996-02-20 | 1997-11-04 | Fuji Electric Co Ltd | Current balance circuit for parallel-connected controllable semiconductor element |
| CN1274192A (en) * | 1999-05-14 | 2000-11-22 | 株式会社日立制作所 | Power transfering system |
| CN101043138A (en) * | 2006-03-22 | 2007-09-26 | 株式会社日立制作所 | Protection circuit for semiconductor element |
| CN101686044A (en) * | 2009-03-25 | 2010-03-31 | 深圳市科陆变频器有限公司 | IGBT drive protection circuit |
| CN202204866U (en) * | 2011-08-29 | 2012-04-25 | 深圳市锐钜科技有限公司 | Current detection circuit for air-conditioner compressor |
| CN102735343A (en) * | 2012-07-04 | 2012-10-17 | 昆明物理研究所 | Method for improving charge storage capacity of readout circuit by applying charge deduction technology |
-
2013
- 2013-06-27 CN CN201310263167.2A patent/CN103280775B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09289442A (en) * | 1996-02-20 | 1997-11-04 | Fuji Electric Co Ltd | Current balance circuit for parallel-connected controllable semiconductor element |
| CN1274192A (en) * | 1999-05-14 | 2000-11-22 | 株式会社日立制作所 | Power transfering system |
| CN101043138A (en) * | 2006-03-22 | 2007-09-26 | 株式会社日立制作所 | Protection circuit for semiconductor element |
| CN101686044A (en) * | 2009-03-25 | 2010-03-31 | 深圳市科陆变频器有限公司 | IGBT drive protection circuit |
| CN202204866U (en) * | 2011-08-29 | 2012-04-25 | 深圳市锐钜科技有限公司 | Current detection circuit for air-conditioner compressor |
| CN102735343A (en) * | 2012-07-04 | 2012-10-17 | 昆明物理研究所 | Method for improving charge storage capacity of readout circuit by applying charge deduction technology |
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