CN102231598B - a power circuit - Google Patents

a power circuit Download PDF

Info

Publication number
CN102231598B
CN102231598B CN201110152021.1A CN201110152021A CN102231598B CN 102231598 B CN102231598 B CN 102231598B CN 201110152021 A CN201110152021 A CN 201110152021A CN 102231598 B CN102231598 B CN 102231598B
Authority
CN
China
Prior art keywords
power supply
power
diode
source
bias
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201110152021.1A
Other languages
Chinese (zh)
Other versions
CN102231598A (en
Inventor
周翔
姚洪涛
罗轶峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sany Heavy Industry Co Ltd
Original Assignee
Sany Heavy Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sany Heavy Industry Co Ltd filed Critical Sany Heavy Industry Co Ltd
Priority to CN201110152021.1A priority Critical patent/CN102231598B/en
Publication of CN102231598A publication Critical patent/CN102231598A/en
Priority to PCT/CN2012/074298 priority patent/WO2012167673A1/en
Application granted granted Critical
Publication of CN102231598B publication Critical patent/CN102231598B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)

Abstract

本发明涉及电子技术领域，提供了一种电源电路。该电源电路包括MOS管和偏置控制电路，所述MOS管的源极和漏极串接于电源和负载之间，所述偏置控制电路根据接收到的上电时序信号控制MOS管栅源之间的偏置状态。本发明实施例提供的一种电源电路，通过偏置控制电路接收外部脉冲控制信号(上电时序信号)来控制MOS管栅源之间的偏置状态，即功率电源对负载的供电状态与否受控于外部控制信号，以保证功率电源为负载正常供电，此外，通过接入压敏电阻和TVS管，以极少的器件实现功率电源的反接保护和瞬态保护功能。

Figure 201110152021

The invention relates to the field of electronic technology and provides a power supply circuit. The power supply circuit includes a MOS tube and a bias control circuit, the source and drain of the MOS tube are connected in series between the power supply and the load, and the bias control circuit controls the gate source of the MOS tube according to the received power-on sequence signal Bias state between. A power supply circuit provided by an embodiment of the present invention controls the bias state between the gate and source of the MOS transistor by receiving an external pulse control signal (power-on sequence signal) through the bias control circuit, that is, whether the power supply supplies power to the load or not. It is controlled by an external control signal to ensure that the power supply supplies power to the load normally. In addition, through the connection of varistors and TVS tubes, the reverse connection protection and transient protection functions of the power supply are realized with very few components.

Figure 201110152021

Description

A kind of power circuit
Technical field
The present invention relates to electronic technology field, particularly relate to a kind of power circuit.
Background technology
In electronic controller system; existing reverse connection prevention protection circuit is conventionally for the Control System Design of plate level; general power consumption is lower; electric current is less, utilizes diode unilateral conduction characteristic or little electric current resettable fuse and diode unilateral conduction characteristic jointly to complete the reversal connection protection to power supply object power supply.But for the plate level power supply system that high-power driving is provided for load, especially vehicle-mounted power driving power supply system, its supply voltage is often 24V, therefore single line load current up to tens amperes, utilize single diode oppositely by characteristic exist power consumption loss large, cannot resist the problems such as transient impact.The reversal connection protection that little electric current resettable fuse and diode complete jointly cannot realize at all.And existing large power supply protection scheme is often for large current system specialized designs protection module independently, volume is large conventionally, device is many, and circuit is complicated, the protection of the especially vehicle-mounted plate level of uncomfortable plywood level power power-supply power power-supply.
Therefore, how developing a kind of power circuit that is applicable to the especially vehicle-mounted power power-supply of plate level power power-supply, is those skilled in the art's technical barriers urgently to be resolved hurrily.
Summary of the invention
In order to overcome the above-mentioned defect of prior art, the invention provides a kind of power circuit.This power circuit comprises metal-oxide-semiconductor (metal-oxide-semiconductor, Metal-oxide-semicondutor field effect transistor) and bias control circuit, the source electrode of described metal-oxide-semiconductor and drain electrode are serially connected with between power supply and load, and described bias control circuit is according to the bias state between the electrifying timing sequence signal controlling metal-oxide-semiconductor grid source receiving; Described bias control circuit comprises the first electric capacity, the second electric capacity, the first diode, the second diode, the 3rd diode, biasing NMOS pipe and bias PMOS pipe; Biasing NMOS pipe is connected with the grid of bias PMOS pipe and as input, receives the input of electrifying timing sequence signal, biasing NMOS pipe is connected as output with the drain electrode of bias PMOS pipe, this output is connected with one end of the first electric capacity, the source electrode of bias PMOS pipe is connected in the anode with positive source and the first diode, the source electrode of biasing NMOS pipe is connected in the anode of the 3rd diode, and the negative electrode of the 3rd diode is connected in power cathode; The other end of the first electric capacity is connected in the negative electrode of the first diode and the anode of the second diode, and one end of the negative electrode of the second diode and the second electric capacity is connected in the grid of metal-oxide-semiconductor, and the other end of the second electric capacity is connected in positive source or negative pole.
Preferably, between positive source and power cathode, be connected with piezo-resistance.
Preferably, between the drain electrode of metal-oxide-semiconductor and positive source or negative pole, be connected with TVS pipe (Transient Voltage Suppressor, Transient Voltage Suppressor).
Preferably, described metal-oxide-semiconductor is N channel power MOS pipe, and its source electrode is connected in positive source, and drain electrode is connected in load.
Preferably, the negative electrode of described TVS pipe is connected in the drain electrode of metal-oxide-semiconductor, and the anodic bonding of described TVS pipe is in power cathode.
A kind of power circuit provided by the invention; by bias control circuit, receive external pulse control signal (electrifying timing sequence signal) and control the bias state between metal-oxide-semiconductor grid source; be whether power power-supply is controlled by external pulse control signal to the power supply state of load; take guaranteed output power supply as load normal power supply; in addition; in preferred version, by access piezo-resistance and TVS, manage, with few device, realize reverse connecting protection and the transient protective function of power power-supply.
Accompanying drawing explanation
Figure 1 shows that the schematic diagram of a kind of power circuit that the embodiment of the present invention provides;
Embodiment
In order to make those skilled in the art understand better technical scheme of the present invention, below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.It should be pointed out that to the description of concrete structure and description order, to be only the explanation to specific embodiment in this part, should not be considered as that protection scope of the present invention is had to any restriction.
Please refer to Fig. 1, Figure 1 shows that the schematic diagram of a kind of power circuit that the embodiment of the present invention provides.
As shown in the figure, a kind of power circuit of the embodiment of the present invention comprises that piezo-resistance R1, TVS pipe D2, N channel power MOS pipe U2(conducting resistance are between a few milliohm to tens milliohms), biasing metal-oxide-semiconductor U3 and U4(U3 be bias PMOS pipe, U4 is biasing NMOS pipe), the first diode D3, the second diode D4, the 3rd diode D5, the first capacitor C 1 and the second capacitor C 2; The positive polarity of power power-supply meets VCC, minus earth line GND; The annexation of this power circuit is as follows:
Piezo-resistance R1 is parallel between positive source VCC and ground wire GND, the source S of N channel power MOS pipe U2 connects positive source VCC(or piezo-resistance R1 one end), the drain D of N channel power MOS pipe U2 connects the negative electrode of TVS pipe D2, the TVS pipe other end of D2 and one end of ground wire GND(or load) be connected, the grid G of N channel power MOS pipe U2 connects the negative electrode of the second diode D4 and one end of the second capacitor C 2, the other end of the second capacitor C 2 is connected with ground wire GND (if U2 is P channel power MOS pipe, be connected with positive source), one end of the first capacitor C 1 is connected with the anode of the second diode D4 with the negative electrode of the first diode D3 respectively, the grid of bias PMOS pipe U3 and biasing NMOS pipe U4 is connected and receives from outside electrifying timing sequence signal (being external pulse control signal P) as input, the drain electrode of bias PMOS pipe U3 and biasing NMOS pipe U4 is connected and as output, is connected in the other end of the first capacitor C 1, the source electrode of bias PMOS pipe U3 is connected with the anode of the first diode with positive source VCC, biasing NMOS pipe U4 is connected with the anode of the 3rd diode D5, the negative electrode of the 3rd diode D5 is connected with ground wire GND, wherein, bias PMOS pipe U3 and biasing NMOS pipe U4, the first diode D3, the second diode D4, the 3rd diode D5, the first capacitor C 1 and the common bias control circuit that forms N channel power MOS pipe U2 of the second capacitor C 2.
In the course of the work, when power power-supply exact connect ion, it is infinitely great that the resistance of piezo-resistance R1 can be thought, in open circuit, now, the diode-built-in conducting in advance of N channel power MOS pipe U2, biasing metal-oxide-semiconductor U3 and U4 can be logical at the effect lower whorl conductance of electrifying timing sequence signal (being external pulse control signal P), by the first capacitor C 1, the second capacitor C 2 are discharged and recharged, make N channel power MOS pipe U2Shan source normal bias, thereby the drain-source passage of N channel power MOS pipe U2 is opened, for load provides normal operation power supply;
In the course of the work, when power power-supply is during in reversal connection state, the resistance of piezo-resistance R1 is still infinitely great, in open circuit, now, TVS pipe D2 is in conducting state, cannot normal bias between N channel power MOS pipe U2Shan source, the drain-source passage of N channel power MOS pipe U2 is all the time in closed condition, and the path of reverse electrical source is cut off, and load is exerted an influence avoiding;
In the course of the work; when power circuit is subject to outside glitch (as thunderbolt, surge etc.); piezo-resistance R1 resistance value sharply reduces; make to form low impedance path between positive source VCC and ground wire GND; simultaneously; TVS pipe D2(is generally relatively high power) can sponge most transient energy, thus protection load is not subject to glitch.
It should be noted that, in above-described embodiment, N channel power MOS pipe U2Shan source bias state is subject to the control of bias control circuit, and bias control circuit is to carry out corresponding operating according to receiving external pulse control signal, be that power power-supply is controlled by external pulse control signal whether to the electric-opening that supplies of load, so can guarantee not have power stage when power power-supply system powers on, prevented the abnormal operation of powered on moment, the form of external pulse control signal can be set output by the control circuit outside power circuit, to meet various control needs, in addition, above-mentioned bias control circuit is when power power-supply reversal connection, also can make reverse bias between N channel power MOS pipe U2Shan source, thereby the drain-source passage of N channel power MOS pipe U2 is remained on to closed condition,
It should be noted that, bias control circuit in above-described embodiment also can adopt other circuit that can realize corresponding function to replace, and for example the circuit being comprised of bias PMOS pipe U3 and biasing NMOS pipe U4 in bigoted control circuit also can replace with the TTL circuit that can realize similar functions.
It should be noted that, above-described embodiment is used N to link up power MOS pipe U2, in other embodiments of the invention, also can use P channel MOS tube, its source electrode is connected with ground wire GND, and drain electrode is connected with load, the arrangement of its bias control circuit is similar to the above embodiments, does not hereby repeat.
A kind of power circuit that the embodiment of the present invention provides; by electrifying timing sequence signal (external pulse control signal) control bias control circuit with realize N link up power MOS pipe drain-source passage conducting and close; and by coordinating of piezo-resistance and TVS pipe; not only prevented the abnormal operation of power power-supply at powered on moment; also make power power-supply there is reversal connection protection function when reversal connection state, when being subject to surge impact, there is transient protective function.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.

Claims (5)

1.一种电源电路，其特征在于，所述电源电路包括MOS管和偏置控制电路，所述MOS管的源极和漏极串接于电源和负载之间，所述偏置控制电路根据接收到的上电时序信号控制MOS管栅源之间的偏置状态；所述偏置控制电路包括第一电容、第二电容、第一二极管、第二二极管、第三二极管、偏置NMOS管和偏置PMOS管；偏置NMOS管与偏置PMOS管的栅极相连作为输入端接收上电时序信号的输入，偏置NMOS管与偏置PMOS管的漏极相连作为输出端并连接于第一电容的一端，偏置PMOS管的源极连接于与电源正极和第一二极管的阳极，偏置NMOS管的源极连接于第三二极管的阳极，第三二极管的阴极连接于电源负极；第一电容的另一端连接于第一二极管的阴极和第二二极管的阳极，第二二极管的阴极和第二电容的一端连接于MOS管的栅极，第二电容的另一端连接于电源正极或负极。1. A power supply circuit, characterized in that, the power supply circuit comprises a MOS tube and a bias control circuit, the source and drain of the MOS tube are connected in series between the power supply and the load, and the bias control circuit is based on The received power-on timing signal controls the bias state between the gate and source of the MOS transistor; the bias control circuit includes a first capacitor, a second capacitor, a first diode, a second diode, and a third diode tube, biased NMOS tube and biased PMOS tube; the biased NMOS tube is connected to the gate of the biased PMOS tube as the input terminal to receive the input of the power-on timing signal, and the biased NMOS tube is connected to the drain of the biased PMOS tube as the The output end is also connected to one end of the first capacitor, the source of the biased PMOS transistor is connected to the positive pole of the power supply and the anode of the first diode, the source of the biased NMOS transistor is connected to the anode of the third diode, and the source of the biased NMOS transistor is connected to the anode of the third diode. The cathodes of the three diodes are connected to the negative pole of the power supply; the other end of the first capacitor is connected to the cathode of the first diode and the anode of the second diode, and the cathode of the second diode and one end of the second capacitor are connected to The gate of the MOS transistor is connected to the positive pole or the negative pole of the power supply with the other end of the second capacitor. 2.如权利要求1所述的电源电路，其特征在于，电源正极与电源负极之间连接有压敏电阻。2. The power supply circuit according to claim 1, wherein a varistor is connected between the positive pole of the power supply and the negative pole of the power supply. 3.如权利要求2所述的电源电路，其特征在于，MOS管的漏极与电源正极或负极之间连接有TVS管。3. The power supply circuit according to claim 2, wherein a TVS transistor is connected between the drain of the MOS transistor and the positive or negative pole of the power supply. 4.如权利要求3所述的电源电路，其特征在于，所述MOS管为N沟道功率MOS管，其源极连接于电源正极，漏极连接于负载。4. The power supply circuit according to claim 3, wherein the MOS transistor is an N-channel power MOS transistor, its source is connected to the positive pole of the power supply, and its drain is connected to the load. 5.如权利要求4所述的电源电路，其特征在于，所述TVS管的阴极连接于MOS管的漏极，所述TVS管的阳极连接于电源负极。5. The power supply circuit according to claim 4, wherein the cathode of the TVS transistor is connected to the drain of the MOS transistor, and the anode of the TVS transistor is connected to the negative electrode of the power supply.
CN201110152021.1A 2011-06-08 2011-06-08 a power circuit Expired - Fee Related CN102231598B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201110152021.1A CN102231598B (en) 2011-06-08 2011-06-08 a power circuit
PCT/CN2012/074298 WO2012167673A1 (en) 2011-06-08 2012-04-18 Power supply circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201110152021.1A CN102231598B (en) 2011-06-08 2011-06-08 a power circuit

Publications (2)

Publication Number Publication Date
CN102231598A CN102231598A (en) 2011-11-02
CN102231598B true CN102231598B (en) 2014-01-15

Family

ID=44844142

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201110152021.1A Expired - Fee Related CN102231598B (en) 2011-06-08 2011-06-08 a power circuit

Country Status (2)

Country Link
CN (1) CN102231598B (en)
WO (1) WO2012167673A1 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102231598B (en) * 2011-06-08 2014-01-15 三一重工股份有限公司 a power circuit
DE102012216185A1 (en) * 2012-09-12 2014-03-13 Robert Bosch Gmbh A semiconductor transistor limiting circuit and method of limiting the voltage across a semiconductor transistor
CN103354415B (en) * 2013-06-28 2016-01-20 江苏浩峰汽车附件有限公司 A kind of for anti-reverse N-channel MOS tube grid suspension drive circuit
CN103595035A (en) * 2013-11-14 2014-02-19 江苏绿扬电子仪器集团有限公司 Protective circuit capable of improving performance of power source
CN105068636A (en) * 2015-08-25 2015-11-18 山东超越数控电子有限公司 Anti-shock surge circuit applied to ruggedized computer
CN107168901B (en) * 2016-03-08 2021-06-25 德昌电机(深圳)有限公司 One-wire two-way communication circuit
CN107946299B (en) * 2017-12-14 2020-06-02 上海艾为电子技术股份有限公司 A load switch and electronic equipment
CN112436725B (en) * 2020-10-15 2024-12-06 北京交通大学 A gate-source voltage disturbance suppression circuit based on transconductance gain negative feedback mechanism

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992683A (en) * 1989-09-28 1991-02-12 Motorola, Inc. Load driver with reduced dissipation under reverse-battery conditions
GB2356504A (en) * 1999-10-09 2001-05-23 Bosch Gmbh Robert A high side FET switch with a charge pump driven by a relatively low voltage CMOS inverter
CN201398073Y (en) * 2009-05-22 2010-02-03 上海华魏光纤传感技术有限公司 Novel power supply safety protection system

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2726698B1 (en) * 1994-11-04 1996-11-29 Thomson Csf PROTECTION CIRCUIT FOR CONTINUOUS SUPPLY AND SUPPLY ASSOCIATED WITH SUCH A CIRCUIT
DE19506074A1 (en) * 1995-02-22 1996-09-05 Telefunken Microelectron Circuit to protect vehicle components from inadvertent reversal of battery polarity or from negative voltage spikes
ITTO20020805A1 (en) * 2002-09-17 2004-03-18 Finmek Magneti Marelli Sistemi Elettronici Spa POLARITY REVERSE PROTECTION CIRCUIT
JP4712519B2 (en) * 2005-05-27 2011-06-29 フリースケール セミコンダクター インコーポレイテッド Charge pump circuit for high side drive circuit and driver drive voltage circuit
CN2838140Y (en) * 2005-08-25 2006-11-15 是蓉珠 Vehicular DC-DC converter
CN2894061Y (en) * 2005-09-05 2007-04-25 廉洁 DC power supply conversion combination
DE102007061978B4 (en) * 2007-12-21 2013-04-11 Infineon Technologies Ag Circuit arrangement for providing a voltage supply for a transistor driver circuit
CN102231598B (en) * 2011-06-08 2014-01-15 三一重工股份有限公司 a power circuit

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4992683A (en) * 1989-09-28 1991-02-12 Motorola, Inc. Load driver with reduced dissipation under reverse-battery conditions
GB2356504A (en) * 1999-10-09 2001-05-23 Bosch Gmbh Robert A high side FET switch with a charge pump driven by a relatively low voltage CMOS inverter
CN201398073Y (en) * 2009-05-22 2010-02-03 上海华魏光纤传感技术有限公司 Novel power supply safety protection system

Also Published As

Publication number Publication date
CN102231598A (en) 2011-11-02
WO2012167673A1 (en) 2012-12-13

Similar Documents

Publication Publication Date Title
CN102231598B (en) a power circuit
US20080192396A1 (en) Over-voltage protection circuit and method thereof
JP6084056B2 (en) Charge / discharge control circuit and battery device
CN101860188B (en) Switch power supply circuit
WO2013047005A1 (en) Load driving circuit
CN104022634B (en) A kind of storage capacitor formula high and low pressure surge restraint circuit and suppressing method thereof
KR20150127853A (en) Battery protection ic and battery device
CN102047560A (en) Output driver with overvoltage protection
CN110687439B (en) High-side drive switch fault detection circuit and fault detection method
CN108376967A (en) A kind of multiple-channel output low voltage difference overcurrent protector
CN107623511A (en) A kind of vehicle solid-state relay for including NMOS tube with overcurrent protection
WO2016177197A1 (en) Single-power-supply circuit and power supply system
JP4880436B2 (en) Semiconductor integrated circuit and power supply device
CN105929886A (en) Reference Voltage Circuit And Electronic Device
CN116346099A (en) Gate driving circuit of cascade type power device and integrated semiconductor power device
JP6601026B2 (en) Semiconductor switch circuit and semiconductor relay circuit
CN103208823A (en) Battery management device, battery management method and circuit applying device
CN216774327U (en) Battery protection chip and battery system
JP2015046829A (en) Switch circuit
CN107039964A (en) A kind of reversal of power protection circuit
CN111769541A (en) Power supply circuit, terminal accessory and method for preventing voltage backflow
JP4467150B2 (en) Driving circuit
CN119813751B (en) Gate drive control circuit, boost converter, chip and electronic equipment
CN218771305U (en) Anti-reverse connection circuit with overvoltage protection function
CN214900157U (en) A load short circuit protection circuit

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140115