CN105698826B - A kind of active quenching circuit applied to Geiger mode angular position digitizer (APD) detector - Google Patents
A kind of active quenching circuit applied to Geiger mode angular position digitizer (APD) detector Download PDFInfo
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- CN105698826B CN105698826B CN201610047722.1A CN201610047722A CN105698826B CN 105698826 B CN105698826 B CN 105698826B CN 201610047722 A CN201610047722 A CN 201610047722A CN 105698826 B CN105698826 B CN 105698826B
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Abstract
The invention discloses a kind of active quenching circuit applied to Geiger mode angular position digitizer (APD) detector, including nmos pipes M1, nmos pipes M2, pmos pipes M3, nmos pipes M4, pmos pipes M5, pmos pipes M6, nmos pipes M7, nmos pipes M8, electric capacity C1, phase inverter Inv1, phase inverter Inv2 and NAND gate NAND；Wherein, nmos pipes M1Drain electrode be connected with the anode of APD detectors, the negative electrode of APD detectors and reverse-biased high pressure VB+exIt is connected.Realized using feedback arrangement to the subnanosecond level of APD detectors or APD array active quenching and Rapid reset, its cool time is in subnanosecond level；The hold off times are up to 5ns, and can voluntarily be adjusted according to actual conditions；Integrated circuit is simple and compact for structure, area very little, low in energy consumption, speed is fast, and suitable for single or Pixel-level APD detectors quenching, stochastic continuity detection is realized for APD detectors, extends device service life and provides reliable guarantee.
Description
Technical field
It is more particularly to a kind of applied to Geiger mode angular position digitizer (APD) detector the invention belongs to laser acquisition reading circuit field
Active quenching circuit.
Background technology
Nineteen fifty-three, the triumphant doubling effect that germanium silicon photoelectric current is found that with K.B. Mai Kafei of K.G. Mikes.After more than ten years,
Nineteen sixty-five, first avalanche photodide (Avalanche Photo Diode, APD) come out.This photoelectric device has not
It is same as the good characteristic of other photoelectric devices.More than avalanche voltage VBReversed bias voltage biasing under, it possesses the single light of response
The ability of son, there is high detectivity.APD is the photoelectric detector based on inner photoeffect and with internal high-gain
Part, avalanche effect is formed under high electric field effect by photo-generated carrier, is in recent years most so as to obtain the photoelectric current of macroscopic view
The photoelectric detector of development prospect.
But too high sensitivity also brings many problems for APD application, wherein one of most important problem be exactly with
And come big avalanche current.The response current of APD detectors is very big, and typically in milliampere level, and this snowslide is self-sustaining
, as long as that is, in the case where being biased in reverse-biased high pressure, avalanche effect can be just sustained caused by APD detectors so that snow
Collapse electric current constantly to increase, finally because heating effect of current causes APD detectors permanently to burn out in itself, or even back-end circuit is produced
It is raw to destroy.In addition, in the case where there is illumination condition, the APD devices applied to single photon counting can produce afterpulse effect (After-
Pulsing), i.e., after being captured due to a part of photoelectron caused by APD device materials trap in itself and defect by trap, counting
After the completion of number again by trap discharge and caused by spurious count.Above both of these case can all make the hydraulic performance declines of APD in the application.
At present, in the active several big fields of APD detectors, including the neck such as laser 3-D imagings, quantum communications, bioluminescence and medical treatment
Domain, solve big avalanche current and the afterpulse effect of APD detectors, be all that APD detectors apply upper heavy difficulties.
To reduce APD detectors avalanche current and afterpulse effect it is necessary to be quenched to APD detectors, that is, exist
After the photon signal response interested in us of APD detectors, the bias voltage at APD detectors both ends is reduced, makes it below snow
Collapse voltage VB, so that APD detectors do not possess the ability that snowslide occurs again, again by both end voltage before detect next time
Reset to avalanche voltage VBMore than.At present, the quenching technology of APD detectors is typically divided into three kinds, i.e., passive quenching
(Passive Quenching), active quenching (Active Quenching) and gating patterns (Gate Mode).
Fig. 1 is passive quenching circuit (Passive Quenching Circuit) schematic diagram.Wherein, the moon of APD detectors
Pole and reversed bias voltage VB+exIt is connected, anode and quenching resistance RsOne end be connected, the other end for quenching resistance is connected to the ground.When having
During photon irradiation, APD detectors produce a very big avalanche current, flow through resistance RsSo that the anode voltage of APD detectors
Rise, reduces the voltage difference of the interpolar of APD detectors two, realizes the quenching to APD detectors.Under passive quenching pattern,
The resetting time of APD detectors is mainly by quenching resistance RsDetermined with the distribution capacity of APD detectors electric capacity in itself and circuit
It is fixed.The shortcomings that passive quenching circuit, is RsResistance need it is very big avalanche process could be quenched, and current CMOS works
Skill is difficult that the resistance of resistance is made into very accurate, at the same the resetting time of APD detectors typically in hundreds of nanoseconds, greatly limit
The detection rate of detector, therefore passive quenching circuit is generally used for the less demanding occasion of detection rate.
Fig. 2 is gating patterns circuit (Gate Mode Circuit) schematic diagram.The negative electrode of APD detectors and resistance RL's
Lower end is connected, resistance RLUpper end and voltage VAIt is connected, and voltage VAUsually less than avalanche voltage VB.The negative electrode of APD detectors
Also with electric capacity CgRight pole plate be connected, electric capacity CgLeft pole plate be connected with the anode of pulse voltage source, the negative terminal of pulse voltage source with
Ground is connected.The anode of APD detectors and resistance RsUpper end be connected, resistance RsLower end be connected to the ground.During no light, pulse electricity
Potential source output voltage is less than avalanche voltage V for the two poles of the earth bias voltage of 0, APD detectorsB, APD detectors do not work；There is illumination
When, pulse voltage source exports a high pressure gate pulse V simultaneouslyg, and pass through electric capacity CgIt is coupled to the negative electrode of APD detectors so that
The two poles of the earth bias voltage of APD detectors is higher than avalanche voltage VB, APD detectors are in running order.Gating patterns can be fine
Ground solves the problems, such as big avalanche current and afterpulse, but on condition that the time that photon reaches, it is known that therefore this circuit structure
The illuminated detection of bowing of airborne platform is only applicable to, and reaching random preceding illuminated detection for photon can not use, and can not realize
Continuous random probing.
The content of the invention
For prior art, the present invention, which proposes, a kind of to be exclusively used in being operated in the active of APD detectors under Geiger mode angular position digitizer and quenches
Ignition circuit (AQC), subnanosecond level actively quenching and the Rapid reset, and realize to APD detectors are realized using feedback arrangement
The hold-off times are adjustable, and integrated circuit is simple and compact for structure, area very little, to realize the quick of Pixel-level APD detectors
Quenching and reset, the service life of extension APD devices provide a kind of efficiently feasible scheme.
In order to solve the above-mentioned technical problem, it is proposed by the present invention a kind of to be quenched applied to the active of Geiger mode angular position digitizer (APD) detector
Ignition circuit, including nmos pipes M1, nmos pipes M2, pmos pipes M3, nmos pipes M4, pmos pipes M5, pmos pipes M6, nmos pipes M7、nmos
Pipe M8, electric capacity C1, phase inverter Inv1, phase inverter Inv2 and NAND gate NAND；Annexation between each device is as follows：
The nmos pipes M1Drain electrode be connected with the anode of APD detectors, the negative electrodes of the APD detectors and reverse-biased high pressure
VB+exIt is connected, the nmos pipes M1Drain electrode be additionally coupled to the grid of itself, the nmos pipes M1Source electrode and the nmos pipes M2
Drain electrode be connected, the nmos pipes M2Grid and the phase inverter Inv1 output end VsIt is connected, the nmos pipes M2Source electrode
It is connected to the ground；The pmos pipes M3Source electrode and voltage VBIt is connected, the pmos pipes M3Grid and the phase inverter Inv1 it is defeated
Go out to hold VsIt is connected, the nmos pipes M1Grid, phase inverter Inv1 input V134With nmos pipes M4Drain electrode be connected be parallel to
The pmos pipes M3Drain electrode, the nmos pipes M4Grid and the NAND gate NAND output end VresetIt is connected, it is described
Nmos pipes M4Source electrode be connected to the ground；The pmos pipes M5Source electrode and supply voltage VDDIt is connected, the pmos pipes M5Grid be
The control terminal V of circuithold-off, the pmos pipes M5Drain electrode and the pmos pipes M6Source electrode be connected, the phase inverter Inv1
Output end VsWith the nmos pipes M7Gate connected in parallel in the pmos pipes M6Grid, the nmos pipes M7Drain electrode, nmos
Pipe M8Drain electrode, electric capacity C1Top crown, phase inverter Inv2 input VcapIt is parallel to the pmos pipes M6Drain electrode, it is described
Nmos pipes M7Source electrode be connected to the ground；The nmos pipes M8Source electrode and the electric capacity C1Bottom crown, be connected, the nmos
Pipe M8 grid is the input signal end V of circuitG；The output end V of the phase inverter Inv23With the first of the NAND gate NAND
Individual input is connected, and second input of the NAND gate NAND is the input signal end RST of circuit, the NAND gate NAND
Output end VresetWith the nmos pipes M4Grid be connected.
Further,
The nmos pipes M1With nmos pipes M2Breadth length ratio be respectively 1um/0.18um, 0.66um/0.18um.
The nmos pipes M4Breadth length ratio be all higher than the nmosM1, nmos pipes M2With pmos pipes M3Breadth length ratio.
The pmos pipes M5Breadth length ratio be 2um/0.18um.
The pmos pipes M6A width of breadth length ratio be 0.7um/0.18um.
The phase inverter Inv2 is the phase inverter of low threshold voltage, and its threshold voltage is less than 900mV, in 700mV~800mV
Between.
Compared with prior art, the beneficial effects of the invention are as follows：
The active quenching circuit of the present invention can be realized to the APD detectors or APD array being operated under Geiger mode angular position digitizer
Quenching rapidly and efficiently.Its cool time is in subnanosecond level；The hold-off times are up to 5ns, and can according to actual conditions
Voluntarily adjust；Resetting time only has tens psecs, almost can be ignored.Integrated circuit is compact-sized, and area is small, power consumption
It is low, speed is fast, suitable for single or Pixel-level APD detectors quenching, realize stochastic continuity detection for APD detectors, prolong
Long device service life provides reliable guarantee.
Brief description of the drawings
Fig. 1 is passive quenching circuit (Passive Quenching Circuit) schematic diagram；
Fig. 2 is gating patterns circuit (Gate Mode Circuit) schematic diagram；
Fig. 3 is the active quenching circuit diagram of the present invention.
Embodiment
Technical solution of the present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings, described is specific
Only the present invention is explained for embodiment, is not intended to limit the invention.
Relative to passive quenching circuit and gating patterns circuit, active quenching circuit versatility is stronger.Generally, its
Mentality of designing is that avalanche current is converted into avalanche voltage signal, and passes through the inclined of the interpolar of feedback arrangement APD detectors two
Put voltage and be less than avalanche voltage VB, realize the quenching to APD detectors.Meanwhile avalanche voltage signal can open hold- below
Off circuits carry out delay process to APD detectors, to ensure to be released by trap in this section of delay by the photoelectron of trap capture
Put and bury in oblivion, so as to reduce afterpulse effect.After delay terminates, then APD detectors are resetted automatically, to wait photon next time
The arrival of event.
It is a kind of active quenching circuit applied to Geiger mode angular position digitizer (APD) detector proposed by the present invention as shown in Figure 3, including
Nmos pipes M1, nmos pipes M2, pmos pipes M3, nmos pipes M4, pmos pipes M5, pmos pipes M6, nmos pipes M7, nmos pipes M8, electric capacity C1、
Phase inverter Inv1, phase inverter Inv2 and NAND gate NAND；Annexation between each device is as follows：
The nmos pipes M1Drain electrode be connected with the anode of APD detectors, the negative electrodes of the APD detectors and reverse-biased high pressure
VB+exIt is connected,
The nmos pipes M1Drain electrode be additionally coupled to the grid of itself, the nmos pipes M1Source electrode and the nmos pipes M2
Drain electrode be connected, the nmos pipes M2Grid and the phase inverter Inv1 output end VsIt is connected, the nmos pipes M2Source electrode
It is connected to the ground；
The pmos pipes M3Source electrode and voltage VBIt is connected, the pmos pipes M3Grid and the phase inverter Inv1 it is defeated
Go out to hold VsIt is connected, the nmos pipes M1Grid, phase inverter Inv1 input V134With nmos pipes M4Drain electrode be connected be parallel to
The pmos pipes M3Drain electrode, the nmos pipes M4Grid and the NAND gate NAND output end VresetIt is connected, it is described
Nmos pipes M4Source electrode be connected to the ground；
The pmos pipes M5Source electrode and supply voltage VDDIt is connected, the pmos pipes M5Grid be circuit control terminal
Vhold-off, the pmos pipes M5Drain electrode and the pmos pipes M6Source electrode be connected, the output end V of the phase inverter Inv1sAnd institute
State nmos pipes M7Gate connected in parallel in the pmos pipes M6Grid, the nmos pipes M7Drain electrode, nmos pipes M8Drain, electricity
Hold C1Top crown, phase inverter Inv2 input VcapIt is parallel to the pmos pipes M6Drain electrode, the nmos pipes M7Source electrode
It is connected to the ground；
The nmos pipes M8Source electrode and the electric capacity C1Bottom crown, be connected, the grid of the nmos pipes M8 is circuit
Input signal end VG；
The output end V of the phase inverter Inv23It is connected with first input of the NAND gate NAND, the NAND gate
NAND second input is the input signal end RST of circuit, the output end V of the NAND gate NANDresetWith the nmos
Pipe M4Grid be connected.
The course of work of the active quenching circuit of the present invention is as follows：
When no photon is detected, the plus earth of APD detectors, the reversed bias voltage of the interpolar of APD detectors two is
VB+ex, higher than avalanche voltage VB, nmos pipes M4It is closed, phase inverter Inv1 output end VsExport logic level " 1 ".
When there is photon to be detected, APD detectors produce the avalanche current of milliampere level, by the anode electricity of APD detectors
Pressure is drawn high, the voltage V of the threshold voltage more than phase inverter Inv1134Make phase inverter Inv1 output end VsExport logic level
" 0 ", and then make nmos pipes M2Close, pmos pipes M3Open.So, the anode of APD detectors passes through the pmos pipes M3It is connected to electricity
Press VBSo that the bias voltage of the interpolar of APD detectors two is reduced to VB+ex-VB=Vex, less than avalanche voltage VB, avalanche process hindered
Only, the quenching process to APD detectors is completed.
Because the logic level of phase inverter Inv1 outputs is " 0 ", pmos pipes M6Open, electric capacity C1Pass through pmos pipes M5With
Pmos pipes M6Charging, the charging interval is by Vhold-offControl.Work as VcapPhase inverter Inv2 threshold value is reached, phase inverter Inv2's is defeated
Go out from logic level " 1 " and be changed into logic level " 0 ".Because one of NAND gate NAND input is changed into logic level " 0 ", therefore with
NOT gate NAND output VresetIt is changed into logic level " 1 ", and then by nmos pipes M4Open.Now, the anode of APD detectors leads to again
Cross nmos pipes M4Ground is pulled down to, until phase inverter Inv1 output end VsLogic level " 1 " is reached, so as to close pmos pipes
M3.So, delay and the reseting procedure to APD detectors are just completed.Completing the APD detectors after resetting can start newly again
One wheel work, waits the arrival of photo-event next time.
It is noted herein that：Because avalanche current caused by APD detectors is larger, therefore nmos pipes M1Managed with nmos
M2Breadth length ratio it is larger；Simultaneously in order that nmos pipes M4The anode of APD detectors, nmos pipes M can be dragged down4Breadth length ratio
It is greater than nmos pipes M1, nmos pipes M2The breadth length ratio of sum；Pmos pipes M5Breadth length ratio it is slightly larger with provide it is sizeable charging electricity
Stream；Limited by the capacitance for the electric capacity that technique factory provides, it is necessary to adjust pmos pipes M6It is wide to extend electric capacity C1Charging when
Between；Phase inverter Inv2 is the phase inverter of low threshold voltage.The above-mentioned relevant parameter about the device such as institute of table 1 is provided in the present invention
Show：
Table 1
| Nmos pipes M1 | Breadth length ratio：1um/0.18um |
| Nmos pipes M2 | Breadth length ratio：0.66um/0.18um |
| Pmos pipes M3 | Breadth length ratio：0.5um/0.18um |
| Nmos pipes M4 | Breadth length ratio：6um/0.18um |
| Pmos pipes M5 | Breadth length ratio：2um/0.18um |
| Pmos pipes M6 | It is wide：0.7 (unit：um) |
| Phase inverter Inv2 | Voltage：760 (units：mV) |
In the present invention, the APD that connects can be detected when within 1GHz by 1.8V, pulse frequency in supply voltage
Device realizes rapid quenching, delay and Rapid reset.
Although above in conjunction with figure, invention has been described, and the invention is not limited in above-mentioned specific embodiment party
Formula, above-mentioned embodiment is only schematical, rather than restricted, and one of ordinary skill in the art is in this hair
Under bright enlightenment, without deviating from the spirit of the invention, many variations can also be made, these belong to the guarantor of the present invention
Within shield.
Claims (6)
1. a kind of active quenching circuit applied to Geiger mode angular position digitizer (APD) detector, including the nmos being connected with APD detector anodes
Pipe M1, the negative electrode of the APD detectors and reverse-biased high pressure VB+exIt is connected, it is characterised in that：
The active quenching circuit also includes nmos pipes M2, pmos pipes M3, nmos pipes M4, pmos pipes M5, pmos pipes M6, nmos pipes M7、
Nmos pipes M8, electric capacity C1, phase inverter Inv1, phase inverter Inv2 and NAND gate NAND；
The anode of the APD detectors and nmos pipes M1Drain electrode be connected, the nmos pipes M1Drain electrode be additionally coupled to the grid of itself
Pole, the nmos pipes M1Source electrode and the nmos pipes M2Drain electrode be connected, the nmos pipes M2Grid and the phase inverter
Inv1 output end VsIt is connected, the nmos pipes M2Source electrode be connected to the ground；
The pmos pipes M3Source electrode and the outer avalanche voltage V for APDBIt is connected, the pmos pipes M3Grid and the phase inverter
Inv1 output end VsIt is connected, the nmos pipes M1Grid, phase inverter Inv1 input V134With nmos pipes M4Drain electrode phase
Company is parallel to the pmos pipes M3Drain electrode, the nmos pipes M4Grid and the NAND gate NAND output end VresetPhase
Even, the nmos pipes M4Source electrode be connected to the ground；
The pmos pipes M5Source electrode and supply voltage VDDIt is connected, the pmos pipes M5Grid be circuit control terminal
Vhold-off, the pmos pipes M5Drain electrode and the pmos pipes M6Source electrode be connected, the output end V of the phase inverter Inv1sAnd institute
State nmos pipes M7Gate connected in parallel in the pmos pipes M6Grid, the nmos pipes M7Drain electrode, nmos pipes M8Drain, electricity
Hold C1Top crown, phase inverter Inv2 input VcapIt is parallel to the pmos pipes M6Drain electrode, the nmos pipes M7Source electrode
It is connected to the ground；
The nmos pipes M8Source electrode and the electric capacity C1Bottom crown, be connected, the grid of the nmos pipes M8 is the defeated of circuit
Enter signal end VG；
The output end V of the phase inverter Inv23It is connected with first input of the NAND gate NAND, the NAND gate NAND
Second input be circuit input signal end RST, the output end V of the NAND gate NANDresetWith the nmos pipes M4
Grid be connected.
2. it is applied to the active quenching circuit of Geiger mode angular position digitizer (APD) detector according to claim 1, it is characterised in that：It is described
Nmos pipes M1With nmos pipes M2Breadth length ratio be respectively 1um/0.18um, 0.66um/0.18um.
3. it is applied to the active quenching circuit of Geiger mode angular position digitizer (APD) detector according to claim 1, it is characterised in that：It is described
Nmos pipes M4Breadth length ratio be all higher than the nmos pipes M1, nmos pipes M2With pmos pipes M3Breadth length ratio.
4. it is applied to the active quenching circuit of Geiger mode angular position digitizer (APD) detector according to claim 1, it is characterised in that：It is described
Pmos pipes M5Breadth length ratio be 2um/0.18um.
5. it is applied to the active quenching circuit of Geiger mode angular position digitizer (APD) detector according to claim 1, it is characterised in that：It is described
Pmos pipes M6Breadth length ratio be 0.7um/0.18um.
6. it is applied to the active quenching circuit of Geiger mode angular position digitizer (APD) detector according to claim 1, it is characterised in that：It is described
Phase inverter Inv2 is the phase inverter of low threshold voltage, and its threshold voltage is less than 900mV, between 700mV~800mV.
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| CN106206638B (en) * | 2016-08-31 | 2019-01-11 | 中国科学院上海高等研究院 | Single-photon avalanche diode dot structure and picture element array structure |
| CN106353785B (en) * | 2016-09-05 | 2019-12-24 | 中国科学院高能物理研究所 | Sensor and detector based on avalanche photodiode |
| CN106603051A (en) * | 2016-12-08 | 2017-04-26 | 中国科学院上海高等研究院 | Quenching resetting circuit of single photon avalanche diode |
| CN107271058B (en) * | 2017-06-27 | 2023-08-01 | 浙江九州量子信息技术股份有限公司 | High-speed self-feedback single photon detection quenching control circuit and control method |
| CN109459149A (en) * | 2018-10-11 | 2019-03-12 | 桂林电子科技大学 | A kind of measurement of high-precision single photon detection chip real time temperature and performance optimization system |
| CN111121986B (en) * | 2019-12-25 | 2021-06-29 | 桂林电子科技大学 | Single photon detection system with rear pulse correction function |
| CN112363148A (en) * | 2020-11-09 | 2021-02-12 | 广东博智林机器人有限公司 | Photoelectric detection circuit and photoelectric detector |
| CN113820011B (en) * | 2021-09-24 | 2022-05-17 | 电子科技大学 | Shielding type photocurrent detection circuit for GM-APD |
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