CN112363148A - Photoelectric detection circuit and photoelectric detector - Google Patents
Photoelectric detection circuit and photoelectric detector Download PDFInfo
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- CN112363148A CN112363148A CN202011238538.8A CN202011238538A CN112363148A CN 112363148 A CN112363148 A CN 112363148A CN 202011238538 A CN202011238538 A CN 202011238538A CN 112363148 A CN112363148 A CN 112363148A
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Abstract
The application relates to a photoelectric detection circuit and a photoelectric detector. The photoelectric detection circuit comprises a voltage bias circuit, a control circuit 10 and a switching device 20; the voltage bias circuit comprises a charging resistor R1 and an energy storage capacitor C1; one end of the charging resistor R1 is connected with one end of the energy storage capacitor C1 and is used for being connected with a first end of the photoelectric conversion equipment, and the other end of the charging resistor R1 is used for being connected with an external power supply; the other end of the energy storage capacitor C1 is used for connecting a reference potential point; the first end of the switching device 20 is connected to one end of the energy storage capacitor C1, the second end is connected to the other end of the energy storage capacitor C1, and the third end is connected to the output end of the control circuit 10; the input end of the control circuit 10 is used for connecting the second end of the photoelectric conversion device; the control circuit 10 outputs a pulse signal to the switching device 20 based on the electric signal output from the photoelectric conversion apparatus; the pulse signal is used to control the switching device 20 to connect one end of the energy storage capacitor C1 with the other end of the energy storage capacitor C1. The photoelectric conversion device improves the capability of continuously detecting adjacent optical echo signals after encountering strong optical echo signals.
Description
Technical Field
The application relates to the technical field of laser detection, in particular to a photoelectric detection circuit and a photoelectric detector.
Background
In a laser radar system, a photoelectric detector is used for receiving optical pulse echoes reflected by a target, and due to the difference of the reflectivity and the distance of the reflected target, the intensity difference of the received optical echoes is large, so that the problem that the detector is saturated due to the fact that the received light intensity is too strong often occurs. After the detector is saturated, the output signal of the photoelectric conversion circuit is broadened in time, so that the subsequent detection of a target which is relatively close to each other is influenced.
In the implementation process, the inventor finds that at least the following problems exist in the conventional technology: the conventional photoelectric detector has poor saturation resistance.
Disclosure of Invention
In view of the above, it is desirable to provide a photodetection circuit and a photodetector capable of improving the anti-saturation capability of the photodetector.
In order to achieve the above object, in one aspect, an embodiment of the present invention provides a photodetection circuit, including a voltage bias circuit, a control circuit 10, and a switching device 20; the voltage bias circuit comprises a charging resistor R1 and an energy storage capacitor C1;
one end of the charging resistor R1 is connected with one end of the energy storage capacitor C1 and is used for being connected with a first end of the photoelectric conversion equipment, and the other end of the charging resistor R1 is used for being connected with an external power supply; the other end of the energy storage capacitor C1 is used for connecting a reference potential point; the first end of the switching device 20 is connected to one end of the energy storage capacitor C1, the second end is connected to the other end of the energy storage capacitor C1, and the third end is connected to the output end of the control circuit 10; the input end of the control circuit 10 is used for connecting the second end of the photoelectric conversion device;
the control circuit 10 outputs a pulse signal to the switching device 20 based on the electric signal output from the photoelectric conversion apparatus; the pulse signal is used to control the switching device 20 to connect one end of the energy storage capacitor C1 with the other end of the energy storage capacitor C1.
In one embodiment, the control circuit 10 includes a comparator 101;
the comparator 101 has a first input terminal connected to the second terminal of the photoelectric conversion device, a second input terminal connected to the reference voltage point, and an output terminal connected to the third terminal of the switching device 20.
In one embodiment, the photodetection circuit further comprises a driving circuit 30;
the output terminal of the comparator 101 is connected to the third terminal of the switching device 20 through the driving circuit 30.
In one embodiment, the control circuit 10 further comprises a controller 103; the output end of the comparator 101 is connected with the third end of the switching device 20 through the controller 103;
the controller 103 detects the inverted edge of the output signal of the comparator 101 and outputs a pulse signal to the third terminal of the switching device 20.
In one embodiment, the photodetection circuit further comprises a driving circuit 30;
the controller 103 is connected to the third terminal of the switching device 20 through the driving circuit 30.
In one embodiment, the switching device 20 comprises a triode;
the first terminal of the switching device 20 is a collector of the triode, the second terminal is an emitter of the triode, and the third terminal is a base of the triode.
In one embodiment, the switching device 20 includes a MOS transistor;
the first end of the switching device 20 is a drain electrode of the MOS transistor, the second end of the switching device 20 is a source electrode of the MOS transistor, and the third end of the switching device is a gate electrode of the MOS transistor.
In one embodiment, the photodetection circuit further comprises a transimpedance amplifier;
the second terminal of the photoelectric conversion device is connected to the control circuit 10 through a transimpedance amplifier.
In one embodiment, the reference potential point is a zero potential point or a dc low potential point.
In another aspect, an embodiment of the present invention further provides a photodetection device, including at least one photodetector, and a corresponding photodetection circuit as described in any one of the above.
One of the above technical solutions has the following advantages and beneficial effects:
the photoelectric detection circuit comprises a voltage bias circuit, a control circuit 10 and a switching device 20; the voltage bias circuit comprises a charging resistor R1 and an energy storage capacitor C1; one end of the charging resistor R1 is connected with one end of the energy storage capacitor C1 and is used for being connected with a first end of the photoelectric conversion equipment, and the other end of the charging resistor R1 is used for being connected with an external power supply; the other end of the energy storage capacitor C1 is used for connecting a reference potential point; the first end of the switching device 20 is connected to one end of the energy storage capacitor C1, the second end is connected to the other end of the energy storage capacitor C1, and the third end is connected to the output end of the control circuit 10; the input end of the control circuit 10 is used for connecting the second end of the photoelectric conversion device; the control circuit 10 outputs a pulse signal to the switching device 20 based on the electric signal output from the photoelectric conversion apparatus; the pulse signal is used to control the switching device 20 to connect one end of the energy storage capacitor C1 with the other end of the energy storage capacitor C1. By controlling the conduction of the switching device 20, the energy storage capacitor C1 of the voltage bias circuit is rapidly discharged. The switching device 20 disconnects the end of the energy storage capacitor C1 when the pulse signal ends, so that the external power source charges the energy storage capacitor C1. In the case that the RC constants of the charging resistor R1 and the storage capacitor C1 in the voltage bias circuit are small, the bias voltage can be returned to the normal level in an extremely short time. Finally, the photoelectric detection circuit provided by the application can rapidly reply within a few nanoseconds after detecting the highlight echo signal, and then continue to detect the light echo signal of follow-up nanosecond time interval, and the ability of the photoelectric conversion equipment to continue to detect the adjacent light echo signal after encountering the highlight echo signal is greatly improved.
Drawings
The foregoing and other objects, features and advantages of the application will be apparent from the following more particular description of preferred embodiments of the application, as illustrated in the accompanying drawings. Like reference numerals refer to like parts throughout the drawings, and the drawings are not intended to be drawn to scale in actual dimensions, emphasis instead being placed upon illustrating the subject matter of the present application.
FIG. 1 is a first schematic block diagram of a photodetection circuit according to an embodiment;
FIG. 2 is a diagram illustrating the conversion of optical echo signals and electrical signals under different scenarios according to an embodiment;
FIG. 3 is a second schematic block diagram of a photodetection circuit according to an embodiment;
FIG. 4 is a block diagram showing a third schematic configuration of a photodetection circuit according to an embodiment;
FIG. 5 is a fourth schematic block diagram of a photodetection circuit according to an embodiment;
FIG. 6 is a block diagram showing a fifth exemplary configuration of a photodetection circuit according to an embodiment.
10. A control circuit; 20. a switching device; 30. a drive circuit; 101. a comparator; 103. controller
Detailed Description
To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Embodiments of the present application are set forth in the accompanying drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
It will be understood that, as used herein, the terms "first," "second," and the like may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first resistance may be referred to as a second resistance, and similarly, a second resistance may be referred to as a first resistance, without departing from the scope of the present application. The first resistance and the second resistance are both resistances, but they are not the same resistance.
It is to be understood that "connection" in the following embodiments is to be understood as "electrical connection", "communication connection", and the like if the connected circuits, modules, units, and the like have communication of electrical signals or data with each other.
As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises/comprising," "includes" or "including," etc., specify the presence of stated features, integers, steps, operations, components, parts, or combinations thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.
In order to solve the problem of poor anti-saturation performance, the following technical means are generally adopted:
(1) the circuit comprises a photoelectric conversion module, a transimpedance amplification circuit and a clamping circuit; the input end of the photoelectric conversion module is used for receiving a laser pulse signal, the input end of the transimpedance amplification circuit is connected to the output end of the photoelectric conversion module, and the input end of the clamping circuit is connected to the output end of the photoelectric conversion module; the photoelectric conversion module converts the laser pulse signal into a current pulse signal, and the transimpedance amplification circuit converts the current pulse signal into a voltage signal; the clamping circuit shunts or clamps the photocurrent at the input end of the transimpedance amplification circuit. The clamping circuit is added to enable the pulse width of the voltage signal output by the transimpedance amplification circuit to be monotonously widened along with the enhancement of the input signal under the condition that the input signal is strong, and the pulse width is maintained in a small range. However, the above circuit has the problem that the diode response has a high threshold value, and cannot effectively resist the saturation problem of several ns and tens of ns, and the connection of the photodetector to any active device causes the operating characteristics of the photoelectric conversion circuit to be greatly changed (the parasitic capacitance of the active device and the parasitic inductance of the connected circuit), and the most obvious change is that the bandwidth of the circuit is greatly reduced.
(2) The circuit comprises a first resistor, wherein one end of the first resistor receives a direct current bias voltage; the cathode of the avalanche photodiode is connected with the other end of the first resistor; a first capacitor, one end of which receives a pulse voltage and the other end of which is connected with the cathode of the avalanche photodiode; a second capacitor connected between an anode of the avalanche photodiode and ground; and a second resistor connected in parallel with the second capacitor between an anode of the avalanche photodiode and a ground terminal. The circuit utilizes the method of using voltage change on a resistor to control a parallel transistor circuit in a photoelectric conversion circuit to discharge carriers when a detector is saturated. However, the photocurrent is generally in the uA level, and even when the photocurrent is close to saturation, the photocurrent will not exceed 1mA, and the voltage triggered by the transistor is generally about 0.6V, if the resistance value of the sampling resistor is increased, the bandwidth of the photoelectric conversion circuit will be sharply reduced, and the aforementioned problem of the influence of the parasitic capacitance of the active device and the parasitic parameters of the added circuit on the photoelectric detection circuit also exists, and the problem of saturation of the detector in the ns level and tens of ns level cannot be solved.
(3) The circuit comprises: the charging and discharging control circuit comprises a charging and discharging control signal generating circuit, two charging control signal amplifying circuits, two discharging control signal amplifying circuits, a charging on-off control circuit 10 and a discharging on-off control circuit 10, wherein control signal input ends of the two charging control signal amplifying circuits and the two discharging control signal amplifying circuits are respectively connected with corresponding output ends of the charging and discharging control signal generating circuit, and the charging and discharging on-off control circuit 10 comprises MOS (metal oxide semiconductor) tube groups for on-off control positioned on two sides of a charging and discharging load; the control signal output ends of the two charging control signal amplifying circuits and the control signal output ends of the two discharging control signal amplifying circuits are respectively connected with the control ends of the corresponding on-off control MOS tubes through the isolation circuits. The detection circuit can detect a high-power optical signal by adaptively adjusting the bias voltage of the photoelectric detector, but the feedback delay of the detection circuit is very large.
At present, the saturation problem of the detector can only be solved at a delay level of 100ns or even higher, and the design concept of the detector can seriously affect the normal operating characteristics (such as bandwidth and stability) of the photoelectric conversion circuit, but the photoelectric detection circuit provided by the application can effectively solve or avoid the above problems.
In one embodiment, as shown in fig. 1, there is provided a photodetection circuit comprising a voltage bias circuit, a control circuit 10 and a switching device 20; the voltage bias circuit comprises a charging resistor R1 and an energy storage capacitor C1;
one end of the charging resistor R1 is connected with one end of the energy storage capacitor C1 and is used for being connected with a first end of the photoelectric conversion equipment, and the other end of the charging resistor R1 is used for being connected with an external power supply; the other end of the energy storage capacitor C1 is used for connecting a reference potential point; the first end of the switching device 20 is connected to one end of the energy storage capacitor C1, the second end is connected to the other end of the energy storage capacitor C1, and the third end is connected to the output end of the control circuit 10; the input end of the control circuit 10 is used for connecting the second end of the photoelectric conversion device;
the control circuit 10 outputs a pulse signal to the switching device 20 based on the electric signal output from the photoelectric conversion apparatus; the pulse signal is used to control the switching device 20 to connect one end of the energy storage capacitor C1 with the other end of the energy storage capacitor C1.
The voltage bias circuit is used for providing bias voltage for the photoelectric conversion equipment. The photoelectric conversion apparatus is any one of devices in the art that performs light-current conversion, and may include a plurality of photodetectors such as photodiodes and the like; multiple photodetectors and corresponding transimpedance amplifiers may also be included. The external power supply may be a high voltage dc power supply. The reference potential point is a relatively low potential point of the external power supply potential. In one specific example, the reference potential point is a zero potential point or a direct current low potential point. The switching device 20 may be any device having a switching capability in the art, such as a MOS transistor, a triode, etc. The control circuit 10 is any device in the art capable of controlling the switching device 20 to be turned on or off according to an electrical signal output from the photoelectric conversion apparatus. The storage capacitor C1 may be in the form of a junction capacitance of a photodetector in the photoelectric conversion device, or may be in the form of a parasitic capacitance of another device.
Specifically, after the strong light echo signal is subjected to photoelectric conversion by the photoelectric conversion device, the generated electric signal is output to the control circuit 10, and the control circuit 10 outputs a pulse signal to the switching device 20 according to the electric signal output by the photoelectric conversion device. Specifically, the pulse signal may be a narrow pulse signal.
The pulse signal is output to the third terminal of the switching device 20, the first terminal and the second terminal of the switching device 20 are turned on, that is, one terminal of the energy storage capacitor C1 and the other terminal of the energy storage capacitor C1 are turned on, and the voltage across the energy storage capacitor C1 decreases rapidly. That is, the bias high voltage of the photoelectric conversion apparatus is sharply reduced, so that the avalanche gain of the photodetector in the photoelectric conversion apparatus is sharply reduced. The quantity of photon-generated carriers of the photoelectric detector and secondary carriers generated by collision under the action of a strong electric field is sharply reduced, so that the photocurrent of the photoelectric detector in the photoelectric conversion equipment can be rapidly ended, and the phenomenon of broadening of an output signal of a photoelectric detection circuit caused by continuous existence of the photocurrent is avoided. When the output pulse signal is ended, the first terminal and the second terminal of the switching device 20 are disconnected, that is, one terminal of the energy storage capacitor C1 and the other terminal of the energy storage capacitor C1 are not turned on. The external power supply charges the energy storage capacitor C1 through the charging resistor R1. The recovery speed of the bias voltage can be confirmed according to the resistance value of the charging resistor R1 and the capacitance value of the energy storage capacitor C1. In one specific example, after the RC constant is set, the bias voltage supplied from the external power supply to the photoelectric conversion device can be restored to the voltage value of the external power supply within several nanoseconds. So far, the gain of the photodetector in the photoelectric conversion device returns to normal, and the detection of the optical echo signal of the second target which may appear in a few nanoseconds later is not influenced.
Specifically, as shown in fig. 2(a), two echoes input by the photodetection circuit are separated by 5 ns (the interval between the end point of the first hump and the start point of the second hump is 5 ns), and if the light intensities of the two echoes are different, for example, the light intensity of the first echo is large, the output waveform shown in fig. 2(b) appears because the photodetection amplifier is saturated due to the increase of the light intensity. As the light intensity of the first echo continues to increase, the output shown in figure 2(c) appears (the dashed line is the second echo that should be detected), and the first echo overlaps the second echo due to saturation of the photodetector caused by too much light intensity. Fig. 2(d) shows an output waveform of the photodetection circuit provided in the present application, and it can be seen that the first echo with a large light intensity does not cover the second echo. The pulse width of an echo is supposed to be designed to be 5 nanoseconds (the width of the bottom of a hump), and the pulse width can be calculated according to a ranging formula, and by using the photoelectric detection circuit provided by the application, under the condition that a first target is a strong reflected wave, a target which is about 75 centimeters away from the first target can be identified, so that the capability of the photoelectric detection circuit for detecting adjacent targets is greatly improved.
The photoelectric detection circuit controls the on-off of the switching device 20 to realize the rapid discharge of the energy storage capacitor C1 of the voltage bias circuit. The switching device 20 disconnects the end of the energy storage capacitor C1 when the pulse signal ends, so that the external power source charges the energy storage capacitor C1. In the case that the RC constants of the charging resistor R1 and the storage capacitor C1 in the voltage bias circuit are small, the bias voltage can be returned to the normal level in an extremely short time. Finally, the photoelectric detection circuit provided by the application can rapidly reply within a few nanoseconds after detecting the highlight echo signal, and then continue to detect the light echo signal of follow-up nanosecond time interval, and the ability of the photoelectric conversion equipment to continue to detect the adjacent light echo signal after encountering the highlight echo signal is greatly improved.
In one embodiment, as shown in fig. 3, there is provided a photodetection circuit comprising a voltage bias circuit, a control circuit 10 and a switching device 20; the voltage bias circuit comprises a charging resistor R1 and an energy storage capacitor C1;
one end of the charging resistor R1 is connected with one end of the energy storage capacitor C1 and is used for being connected with a first end of the photoelectric conversion equipment, and the other end of the charging resistor R1 is used for being connected with an external power supply; the other end of the energy storage capacitor C1 is used for connecting a reference potential point; the first end of the switching device 20 is connected to one end of the energy storage capacitor C1, the second end is connected to the other end of the energy storage capacitor C1, and the third end is connected to the output end of the control circuit 10; the input end of the control circuit 10 is used for connecting the second end of the photoelectric conversion device;
the control circuit 10 outputs a pulse signal to the switching device 20 based on the electric signal output from the photoelectric conversion apparatus; the pulse signal is used to control the switching device 20 to connect one end of the energy storage capacitor C1 with the other end of the energy storage capacitor C1.
Wherein, the control circuit 10 includes a comparator 101;
the comparator 101 has a first input terminal connected to the second terminal of the photoelectric conversion device, a second input terminal connected to the reference voltage point, and an output terminal connected to the third terminal of the switching device 20.
Specifically, the control circuit 10 implements a function of outputting a pulse signal to the switching device 20 by the comparator 101 in accordance with the electric signal output from the photoelectric conversion device. It should be noted that the first input terminal of the comparator 101 may be a non-inverting input terminal, and the second input terminal may be an inverting input terminal. The non-inverting input terminal of the comparator 101 is used for receiving the electrical signal output by the photoelectric conversion device, when the voltage of the electrical signal increases to exceed the voltage value provided by the reference voltage point, the output of the comparator 101 is inverted (i.e. a narrow pulse signal is generated), and the narrow pulse signal output by the comparator 101 makes the switching device 20 turn on the connection between one end of the energy storage capacitor C1 and the other end of the energy storage capacitor C1.
When the pulse signal output by the comparator 101 is ended, the first terminal and the second terminal of the switching device 20 are disconnected, that is, the one terminal of the energy storage capacitor C1 and the other terminal of the energy storage capacitor C1 are not turned on. The external power supply charges the energy storage capacitor C1 through the charging resistor R1. The recovery speed of the bias voltage can be confirmed according to the resistance value of the charging resistor R1 and the capacitance value of the energy storage capacitor C1. So far, the gain of the photodetector in the photoelectric conversion device returns to normal, and the detection of the optical echo signal of the second target which may appear in a few nanoseconds later is not influenced.
In one embodiment, as shown in fig. 4, there is provided a photodetection circuit comprising a voltage bias circuit, a control circuit 10 and a switching device 20; the voltage bias circuit comprises a charging resistor R1 and an energy storage capacitor C1;
one end of the charging resistor R1 is connected with one end of the energy storage capacitor C1 and is used for being connected with a first end of the photoelectric conversion equipment, and the other end of the charging resistor R1 is used for being connected with an external power supply; the other end of the energy storage capacitor C1 is used for connecting a reference potential point; the first end of the switching device 20 is connected to one end of the energy storage capacitor C1, the second end is connected to the other end of the energy storage capacitor C1, and the third end is connected to the output end of the control circuit 10; the input end of the control circuit 10 is used for connecting the second end of the photoelectric conversion device;
the control circuit 10 outputs a pulse signal to the switching device 20 based on the electric signal output from the photoelectric conversion apparatus; the pulse signal is used to control the switching device 20 to connect one end of the energy storage capacitor C1 with the other end of the energy storage capacitor C1.
Wherein, the control circuit 10 includes a comparator 101;
the comparator 101 has a first input terminal connected to the second terminal of the photoelectric conversion device, a second input terminal connected to the reference voltage point, and an output terminal connected to the third terminal of the switching device 20.
The photodetection circuit further includes a drive circuit 30;
the output terminal of the comparator 101 is connected to the third terminal of the switching device 20 through the driving circuit 30.
Specifically, the driving circuit 30 may be any one of the driving circuits 30 in the art for driving the switching device 20 at a high speed. The driving circuit 30 is an intermediate circuit between the control circuit 10 and the switching device 20 for amplifying the signal output from the control circuit 10 (i.e., amplifying the signal of the control circuit 10 to drive the power transistor).
By providing the drive circuit 30, the conversion efficiency of the switching device 20 is improved, and the reliability of the photodetection circuit is further improved.
In one embodiment, as shown in fig. 5, there is provided a photodetection circuit comprising a voltage bias circuit, a control circuit 10 and a switching device 20; the voltage bias circuit comprises a charging resistor R1 and an energy storage capacitor C1;
one end of the charging resistor R1 is connected with one end of the energy storage capacitor C1 and is used for being connected with a first end of the photoelectric conversion equipment, and the other end of the charging resistor R1 is used for being connected with an external power supply; the other end of the energy storage capacitor C1 is used for connecting a reference potential point; the first end of the switching device 20 is connected to one end of the energy storage capacitor C1, the second end is connected to the other end of the energy storage capacitor C1, and the third end is connected to the output end of the control circuit 10; the input end of the control circuit 10 is used for connecting the second end of the photoelectric conversion device;
the control circuit 10 outputs a pulse signal to the switching device 20 based on the electric signal output from the photoelectric conversion apparatus; the pulse signal is used to control the switching device 20 to connect one end of the energy storage capacitor C1 with the other end of the energy storage capacitor C1.
Wherein, the control circuit 10 includes a comparator 101;
the comparator 101 has a first input terminal connected to the second terminal of the photoelectric conversion device, a second input terminal connected to the reference voltage point, and an output terminal connected to the third terminal of the switching device 20.
The control circuit 10 further includes a controller 103; the output end of the comparator 101 is connected with the third end of the switching device 20 through the controller 103; the controller 103 detects the inverted edge of the output signal of the comparator 101 and outputs a pulse signal to the third terminal of the switching device 20.
Optionally, the type of the controller 103 is not limited, and may be set according to an actual application, for example, the controller may be a general Processor, and includes a Central Processing Unit (CPU), a Network Processor (NP), and the like; it may also be a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), an off-the-shelf programmable gate array (FPGA) or other programmable logic device, a discrete gate or transistor logic device, a discrete hardware component, etc., as long as it can receive the electrical signal output by the photoelectric conversion device and send different control signals to the control terminal of the switching device 20 based on the voltage magnitude of the electrical signal.
Specifically, in a specific example, the first input terminal of the comparator 101 may be a non-inverting input terminal, and the second input terminal may be an inverting input terminal. The first input end is connected with an electric signal transmitted by the photoelectric conversion device, the second input end is connected with a reference voltage, the voltage value of the electric signal is increased along with the increase of the intensity of the optical echo, and when the voltage value of the electric signal is greater than the reference voltage, a rising edge exists in the output signal of the comparator 101. The controller 103 may output a rising edge of the signal to the comparator 101 by any means in the art, and output a pulse signal to the third terminal of the switching device 20 when the rising edge is detected. The pulse signal may be a narrow pulse signal.
In another specific example, the first input terminal of the comparator 101 may be an inverting input terminal, and the second input terminal may be a non-inverting input terminal. The first input end is connected with an electric signal transmitted by the photoelectric conversion device, the second input end is connected with a reference voltage, the voltage value of the electric signal is increased along with the increase of the intensity of the optical echo, and when the voltage value of the electric signal is greater than the reference voltage, a falling edge exists in the output signal of the comparator 101. The controller 103 may output a falling edge of the signal to the comparator 101 by any means in the art, and output a pulse signal to the third terminal of the switching device 20 when the falling edge is detected. The pulse signal may be a narrow pulse signal.
After the pulse signal is ended, the switching device 20 disconnects the end of the energy storage capacitor C1 from the other end of the energy storage capacitor C1.
The pulse width of the pulse signal output by the comparator 101 is changed according to the difference of the optical echo signal, and the photoelectric detection circuit outputs the pulse signal by detecting the inversion edge of the output signal of the comparator 101 by the controller 103, the width of the pulse signal can be set without being influenced by the optical echo signal, and the adjustment convenience of the control delay can be effectively improved.
In one embodiment, as shown in fig. 6, there is provided a photodetection circuit comprising a voltage bias circuit, a control circuit 10 and a switching device 20; the voltage bias circuit comprises a charging resistor R1 and an energy storage capacitor C1;
one end of the charging resistor R1 is connected with one end of the energy storage capacitor C1 and is used for being connected with a first end of the photoelectric conversion equipment, and the other end of the charging resistor R1 is used for being connected with an external power supply; the other end of the energy storage capacitor C1 is used for connecting a reference potential point; the first end of the switching device 20 is connected to one end of the energy storage capacitor C1, the second end is connected to the other end of the energy storage capacitor C1, and the third end is connected to the output end of the control circuit 10; the input end of the control circuit 10 is used for connecting the second end of the photoelectric conversion device;
the control circuit 10 outputs a pulse signal to the switching device 20 based on the electric signal output from the photoelectric conversion apparatus; the pulse signal is used to control the switching device 20 to connect one end of the energy storage capacitor C1 with the other end of the energy storage capacitor C1.
Wherein, the control circuit 10 includes a comparator 101;
the comparator 101 has a first input terminal connected to the second terminal of the photoelectric conversion device, a second input terminal connected to the reference voltage point, and an output terminal connected to the third terminal of the switching device 20. The control circuit 10 further includes a controller 103; the output end of the comparator 101 is connected with the third end of the switching device 20 through the controller 103; the controller 103 detects the inverted edge of the output signal of the comparator 101 and outputs a pulse signal to the third terminal of the switching device 20.
The photodetection circuit further includes a drive circuit 30; the controller 103 is connected to the third terminal of the switching device 20 through the driving circuit 30.
Specifically, the driving circuit 30 may be any one of the driving circuits 30 in the art for driving the switching device 20 at a high speed. The driving circuit 30 is an intermediate circuit between the control circuit 10 and the switching device 20 for amplifying the signal output from the control circuit 10 (i.e., amplifying the signal of the control circuit 10 to drive the power transistor).
By providing the drive circuit 30, the conversion efficiency of the switching device 20 is improved, and the reliability of the photodetection circuit is further improved.
In one embodiment, the switching device 20 comprises a triode;
the first terminal of the switching device 20 is a collector of the triode, the second terminal is an emitter of the triode, and the third terminal is a base of the triode.
Specifically, the switching device 20 is a transistor. The base electrode of the triode is connected with the control circuit 10, the collector electrode is connected with one end of the energy storage capacitor C1, and the emitter electrode is connected with the other end of the energy storage capacitor C1. In one example, the control circuit 10 includes a comparator 101, and an output terminal of the comparator 101 is connected to a base of a transistor. In one example, the control circuit 10 includes a comparator 101 and a controller 103, wherein an output terminal of the controller 103 is connected to a base of a transistor, and an input terminal of the controller 103 is connected to an output terminal of the comparator 101. In one example, the base of the transistor may also be connected to the output of the comparator 101 or the output of the controller 103 via the driving circuit 30.
In one embodiment, the switching device 20 includes a MOS transistor;
the first end of the switching device 20 is a drain electrode of the MOS transistor, the second end of the switching device 20 is a source electrode of the MOS transistor, and the third end of the switching device is a gate electrode of the MOS transistor.
Specifically, the switching device 20 is a MOS transistor. The gate of the MOS transistor is connected to the control circuit 10, the drain is connected to one end of the energy storage capacitor C1, and the source is connected to the other end of the energy storage capacitor C1. In one example, the control circuit 10 includes a comparator 101, and an output terminal of the comparator 101 is connected to a gate of the MOS transistor. In one example, the control circuit 10 includes a comparator 101 and a controller 103, an output terminal of the controller 103 is connected to a gate of the MOS transistor, and an input terminal of the controller 103 is connected to an output terminal of the comparator 101. In one example, the gate of the MOS transistor may also be connected to the output terminal of the comparator 101 or the output terminal of the controller 103 through the driving circuit 30.
In one embodiment, the photodetection circuit further comprises a transimpedance amplifier;
the second terminal of the photoelectric conversion device is connected to the control circuit 10 through a transimpedance amplifier.
In particular, the transimpedance amplifier is used for amplifying the electrical signal so as to enable faster feedback adjustment. Note that, when the control circuit 10 includes the comparator 101 and the controller 103, the second terminal of the photoelectric conversion device is connected to the first input terminal of the comparator 101 through a transimpedance amplifier.
In one embodiment, there is provided a photodetecting device comprising at least one photodetector, and a corresponding photodetecting circuit according to any of the above.
It should be noted that the photodetection circuits may correspond to the photodetectors one to one, that is, one photodetection circuit corresponds to each photodetector. The photodetectors may also correspond to the storage capacitors C1 of the photodetection circuit one by one, that is, the storage capacitor C1 in the photodetection circuit includes a plurality of sub-capacitors. One end of each sub-capacitor is connected to one end of the charging resistor R1, and the other end is connected to the reference potential point. The switching device 20 has a first terminal connected to one terminal of each sub-capacitor and a second terminal connected to the other terminal of each sub-capacitor.
In the description herein, references to the description of "some embodiments," "other embodiments," "desired embodiments," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, a schematic description of the above terminology may not necessarily refer to the same embodiment or example.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A photodetection circuit, characterized in that it comprises a voltage bias circuit, a control circuit (10) and a switching device (20); the voltage bias circuit comprises a charging resistor R1 and an energy storage capacitor C1;
one end of the charging resistor R1 is connected with one end of the energy storage capacitor C1 and is used for being connected with a first end of the photoelectric conversion equipment, and the other end of the charging resistor R1 is used for being connected with an external power supply; the other end of the energy storage capacitor C1 is used for being connected with a reference potential point; the first end of the switching device (20) is connected with one end of the energy storage capacitor C1, the second end of the switching device is connected with the other end of the energy storage capacitor C1, and the third end of the switching device is connected with the output end of the control circuit (10); the input end of the control circuit (10) is used for connecting the second end of the photoelectric conversion device;
the control circuit (10) outputs a pulse signal to the switching device (20) according to the electric signal output by the photoelectric conversion equipment; the pulse signal is used for controlling the switching device (20) to conduct the connection between one end of the energy storage capacitor C1 and the other end of the energy storage capacitor C1.
2. The photodetection circuit according to claim 1, characterized in that the control circuit (10) comprises a comparator (101);
the first input end of the comparator (101) is connected with the second end of the photoelectric conversion device, the second input end of the comparator is connected with a reference voltage point, and the output end of the comparator is connected with the third end of the switching device (20).
3. The photodetection circuit according to claim 2, characterized in that the photodetection circuit further comprises a driving circuit (30);
the output end of the comparator (101) is connected with the third end of the switching device (20) through the driving circuit (30).
4. The photodetection circuit according to claim 2, characterized in that the control circuit (10) further comprises a controller (103); the output end of the comparator (101) is connected with the third end of the switching device (20) through the controller (103);
the controller (103) detects the inversion edge of the output signal of the comparator (101), and outputs the pulse signal to the third end of the switching device (20).
5. The photodetection circuit according to claim 4, characterized in that the photodetection circuit further comprises a driving circuit (30);
the controller (103) is connected with the third end of the switching device (20) through the driving circuit (30).
6. The photodetection circuit according to claim 1, characterized in that the switching device (20) comprises a triode;
the first end of the switching device (20) is a collector of the triode, the second end is an emitter of the triode, and the third end is a base of the triode.
7. The photodetection circuit according to claim 1, characterized in that the switching device (20) comprises a MOS transistor;
the first end of the switch device (20) is the drain electrode of the MOS tube, the second end of the switch device (20) is the source electrode of the MOS tube, and the third end of the switch tube is the grid electrode of the MOS tube.
8. The photodetection circuit according to claim 1, characterized in that the reference potential point is a zero potential point or a direct current low potential point.
9. The photodetection circuit according to any of claims 1 to 8, characterized in that the photodetection circuit further comprises a transimpedance amplifier;
the second end of the photoelectric conversion device is connected with the control circuit (10) through the transimpedance amplifier.
10. A photodetecting device characterized by comprising at least one photodetector and a corresponding photodetecting circuit according to any of the claims 1 to 9.
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| CN202011238538.8A CN112363148A (en) | 2020-11-09 | 2020-11-09 | Photoelectric detection circuit and photoelectric detector |
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| CN202011238538.8A CN112363148A (en) | 2020-11-09 | 2020-11-09 | Photoelectric detection circuit and photoelectric detector |
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Cited By (1)
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| CN113064213A (en) * | 2021-03-10 | 2021-07-02 | 欧姆龙(上海)有限公司 | Light receiving device and photoelectric sensor |
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