CN103501172B - There is the photoconductive switch of sluggish lock function - Google Patents

There is the photoconductive switch of sluggish lock function Download PDF

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Publication number
CN103501172B
CN103501172B CN201310501349.9A CN201310501349A CN103501172B CN 103501172 B CN103501172 B CN 103501172B CN 201310501349 A CN201310501349 A CN 201310501349A CN 103501172 B CN103501172 B CN 103501172B
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resistance
phototriode
photoconductive switch
amplifier
sluggish
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CN103501172A (en
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黄友华
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Yibin Fengchuan Power Technology Co., Ltd.
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Chengdu Hongshan Technology Co Ltd
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Abstract

The invention discloses a kind of photoconductive switch with sluggish lock function, it comprises photoconductive switch circuit and is connected to the feedback switch pipe on photoconductive switch circuit, and photoconductive switch circuit comprises resistance R1, resistance R2, resistance R3, resistance R4, phototriode and amplifier; A not common end ground connection after resistance R3 connects with resistance R4, another not common end is connected on the collector electrode of phototriode; On the base stage that the two ends of resistance R1 are connected to phototriode and collector electrode, the collector electrode of phototriode is connected with power supply and emitter is connected to the ground by resistance R2, an input of amplifier is connected on the emitter of phototriode, another input is connected between resistance R3 and resistance R4, and feedback switch pipe is connected between the base stage of phototriode and the output of amplifier.Its advantage is: the function with sluggish locking, the impact of the illumination that compole is short when can avoid, reaches energy-conservation object.

Description

There is the photoconductive switch of sluggish lock function
Technical field
The present invention relates to a kind of photoconductive switch circuit, relate to a kind of photoconductive switch with sluggish lock function in particular.
Background technology
Photoconductive switch is a kind of semiconductor photoelectronic device developed rapidly in recent ten years.Its operation principle is the resistivity of the photoelectric effect modulation material adopting semi-conducting material, namely light is radiated on semi-conducting material, the Electron absorption photon energy of valence band is in material, conduction band is leapt to by forbidden band, hole in electron concentration and valence band is made in conduction band to increase, namely inspire photo-generate electron-hole pair, make semi-conducting material produce photoelectric effect.Nowadays, get more and more to the utilization of photoconductive switch, the switching circuit utilizing the characteristic of photoconductive switch to research and develop of aspect, each field gets more and more.In some occasions, utilize photoconductive switch to control electrical equipment, but, sometimes due to some special circumstances, enhance illumination suddenly, but time compole short, also make switch opens, do not reach energy-conservation object.
Summary of the invention
The invention provides a kind of photoconductive switch with sluggish lock function, it has the function of sluggish locking, and the impact of the illumination that compole is short when can avoid, reaches energy-conservation object.
For solving above-mentioned technical problem, the present invention by the following technical solutions:
Have the photoconductive switch of sluggish lock function, it comprises photoconductive switch circuit and is connected to the feedback switch pipe on photoconductive switch circuit, and described photoconductive switch circuit comprises resistance R1, resistance R2, resistance R3, resistance R4, phototriode and amplifier; A not common end ground connection after described resistance R3 connects with resistance R4, another not common end is connected on the collector electrode of phototriode; On the base stage that the two ends of described resistance R1 are connected to phototriode and collector electrode, the collector electrode of described phototriode is connected with power supply and emitter is connected to the ground by resistance R2, an input of described amplifier is connected on the emitter of phototriode, another input is connected between resistance R3 and resistance R4, and described feedback switch pipe is connected between the base stage of phototriode and the output of amplifier.In the present invention, resistance R1, resistance R2, resistance R3, resistance R4, phototriode and amplifier form photoconductive switch circuit, and its circuit structure is simple, and when illumination acts on phototriode, illumination makes phototriode V bEreduce, phototriode conducting, two voltage signal differences of input are amplified by amplifier, and the analog signal that amplifier exports can characterize the intensity of illumination.Resistance R2 plays current limliting, and resistance R3 and resistance R4 plays dividing potential drop.Feedback switch pipe carries out monitoring feedback to amplifier output signal, and when light application time is extremely short, i.e. car light irradiation once in a while, also must not open.Play lag function, avoid illumination once in a while to make circuit turn-on, cause to device control out of control, cause the waste of the energy, reach energy-conservation object.
Further technical scheme is:
As preferably, described feedback switch pipe is N-type field effect transistor.
Further, the drain electrode of described N-type field effect transistor is connected in the base stage of phototriode, and source electrode is connected with the output of amplifier, grounded-grid.
Adopt N-type field effect transistor as feedback switch pipe, once amplifier output signal is higher than the cut-in voltage of N-type field effect transistor, then forces to drag down transistor base, namely once close, no longer open.Even if there is light-illuminating once in a while, such as car light, also not in unlatching.
As preferably, the resistance of described resistance R2 is 4 megohm-6 megohms.Resistance R2 plays metering function, can achieve the goal between 4 megohm-6 megohms.
Compared with prior art, the invention has the beneficial effects as follows: the present invention connects feedback switch pipe on photoconductive switch circuit, and it has lag function, the illumination of short period is made to act on photoconductive switch, also can not open, the impact of the illumination that compole is short when avoiding, reach energy-conservation object
Accompanying drawing explanation
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail.
Fig. 1 is circuit theory diagrams of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is further illustrated.Embodiments of the present invention include but not limited to the following example.
[embodiment]
The photoconductive switch with sluggish lock function as shown in Figure 1, it comprises photoconductive switch circuit and is connected to the feedback switch pipe on photoconductive switch circuit, and described photoconductive switch circuit comprises resistance R1, resistance R2, resistance R3, resistance R4, phototriode and amplifier; A not common end ground connection after described resistance R3 connects with resistance R4, another not common end is connected on the collector electrode of phototriode; On the base stage that the two ends of described resistance R1 are connected to phototriode and collector electrode, the collector electrode of described phototriode is connected with power supply and emitter is connected to the ground by resistance R2, an input of described amplifier is connected on the emitter of phototriode, another input is connected between resistance R3 and resistance R4, and described feedback switch pipe is connected between the base stage of phototriode and the output of amplifier.
Described feedback switch pipe is N-type field effect transistor.
The drain electrode of described N-type field effect transistor is connected in the base stage of phototriode, and source electrode is connected with the output of amplifier, grounded-grid.
The resistance of described resistance R2 is 4 megohm-6 megohms.
The present invention can be used for the control to office's air-conditioning, and it is connected in air-condition circuits.
The operation principle of the present embodiment is as follows:
When illumination acts on phototriode, illumination makes phototriode V bEreduce, phototriode conducting, two voltage signal differences of input are amplified by amplifier, and the analog signal that amplifier exports can characterize the intensity of illumination.Resistance R2 plays current limliting, and resistance R3 and resistance R4 plays dividing potential drop.Adopt N-type field effect transistor as feedback switch pipe, once amplifier output signal is higher than the cut-in voltage of N-type field effect transistor, then forces to drag down transistor base, namely once close, no longer open.Even if there is light-illuminating once in a while, such as car light, also not in unlatching, plays lag function, avoid illumination once in a while to make circuit turn-on, cause to device control out of control, cause the waste of the energy, reach energy-conservation object.
According to the above embodiments, well the present invention can be completed.
Be embodiments of the invention as mentioned above.The present invention is not limited to above-mentioned execution mode, and anyone should learn the structural change made under enlightenment of the present invention, and every have identical or close technical scheme with the present invention, all falls within protection scope of the present invention.

Claims (2)

1. there is the photoconductive switch of sluggish lock function, it is characterized in that: it comprises photoconductive switch circuit and is connected to the feedback switch pipe on photoconductive switch circuit, and described photoconductive switch circuit comprises resistance R1, resistance R2, resistance R3, resistance R4, phototriode and amplifier; A not common end ground connection after described resistance R3 connects with resistance R4, another not common end is connected on the collector electrode of phototriode; On the base stage that the two ends of described resistance R1 are connected to phototriode and collector electrode, the collector electrode of described phototriode is connected with power supply and emitter is connected to the ground by resistance R2, an input of described amplifier is connected on the emitter of phototriode, another input is connected between resistance R3 and resistance R4, and described feedback switch pipe is connected between the base stage of phototriode and the output of amplifier; Described feedback switch pipe is N-type field effect transistor; The resistance of described resistance R2 is 4 megohm-6 megohms.
2. the photoconductive switch with sluggish lock function according to claim 1, is characterized in that: the drain electrode of described N-type field effect transistor is connected in the base stage of phototriode, and source electrode is connected with the output of amplifier, grounded-grid.
CN201310501349.9A 2013-10-23 2013-10-23 There is the photoconductive switch of sluggish lock function Active CN103501172B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369371A (en) * 1980-11-24 1983-01-18 Canadian Patents & Dev. Limited Broadband high speed optoelectronic semiconductor switch
CN202513895U (en) * 2012-03-07 2012-10-31 成都掌握移动信息技术有限公司 Light-controlled electronic switch with anti-interference function
CN202679336U (en) * 2012-05-03 2013-01-16 成都智利达科技有限公司 Light-operated electronic switch having anti-interference function
CN203522690U (en) * 2013-10-23 2014-04-02 成都市宏山科技有限公司 Photoconductive switch with delay locking function

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4369371A (en) * 1980-11-24 1983-01-18 Canadian Patents & Dev. Limited Broadband high speed optoelectronic semiconductor switch
CN202513895U (en) * 2012-03-07 2012-10-31 成都掌握移动信息技术有限公司 Light-controlled electronic switch with anti-interference function
CN202679336U (en) * 2012-05-03 2013-01-16 成都智利达科技有限公司 Light-operated electronic switch having anti-interference function
CN203522690U (en) * 2013-10-23 2014-04-02 成都市宏山科技有限公司 Photoconductive switch with delay locking function

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Effective date of registration: 20180702

Address after: 610000 Rong Ou, 144 Qingbaijiang Road, Chengdu, Sichuan.

Patentee after: Chengdu Zhi Rong Chuang Intellectual Property Operation Co., Ltd.

Address before: 610000 20 Yongfeng Road, high tech Zone, Chengdu, Sichuan, 2 1.

Patentee before: Chengdu Hongshan Technology Co., Ltd.

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Effective date of registration: 20181210

Address after: 644000 Sichuan Yibin City, Xuzhou District, Baixi Town, North New District, Qinglong Street, No. 2, Building 11, No. 1

Patentee after: Yibin Fengchuan Power Technology Co., Ltd.

Address before: 610000 Rong Ou, 144 Qingbaijiang Road, Chengdu, Sichuan.

Patentee before: Chengdu Zhi Rong Chuang Intellectual Property Operation Co., Ltd.